CN105261929B - A kind of semiconductor laser of TO-CAN encapsulation and preparation method thereof - Google Patents
A kind of semiconductor laser of TO-CAN encapsulation and preparation method thereof Download PDFInfo
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- CN105261929B CN105261929B CN201510422157.8A CN201510422157A CN105261929B CN 105261929 B CN105261929 B CN 105261929B CN 201510422157 A CN201510422157 A CN 201510422157A CN 105261929 B CN105261929 B CN 105261929B
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Abstract
The present invention proposes a kind of TO CAN encapsulation semiconductor laser and preparation method thereof, and the TO CAN encapsulation semiconductor laser includes：TO tube sockets, semiconductor laser chip, back light detector chip, bonding gold wire, pin and heat sink piece, the heat sink piece of upper surface for being arranged at TO tube sockets, pin insulation is fixed on TO tube sockets, the upper end of at least one pin protrudes from the upper surface of TO tube sockets, semiconductor laser chip is fixed on heat sink piece of surface, supporting table is connected with the top for protruding from TO tube sockets upper surface of a pin, back light detector chip is arranged in supporting table, and the lower section in semiconductor laser chip.The present invention is by being installed on back light detector chip in the supporting table being connected with pin Integral design, eliminate independent cushion block, cushion block Material Cost is saved, and eliminate a gold wire bonding technique between back light detector chip and its cushion block, simplify gold wire bonding technique, bonding gold wire cost has been saved, and has improved the stability of laser product.
Description
Technical field
The present invention relates to laser technology field, more particularly relates to a kind of semiconductor laser and its system of TO-CAN encapsulation
Make method.
Background technology
TO is encapsulated, i.e. Transistor Outline or Through-hole encapsulation technologies, belongs to the transmission of coaxial type light
The encapsulating structure of device, it is developed by original widely used transistor device encapsulation, industrially comparative maturity.TO is sealed
Dress parasitic parameter is small, and simple process and low cost is flexible and convenient to use, and the LD encapsulation of current below 10G speed is mainly sealed using TO
Dress.In LD encapsulation, TO shells inner space is small, and only four leads, does not install semiconductor cooler（TEC）, in cost
On also have great advantage.TO shells material therefor mainly have stainless steel or can valve, TO encapsulation semiconductor laser it is whole
Structure is by TO tube sockets, LD cushion blocks, PD cushion blocks, pin（Pin）, it is band lens pipe cap, PD chips and LD chips and bonding gold wire, interior
Portion's optical system etc. forms, and there are consistent concentricity in structure top and the bottom.
TO-CAN encapsulation semiconductor lasers have small, and energy consumption is low, long lifespan, without refrigeration, simple and reliable process,
The advantages that being adapted to large-scale production, it is widely used in fiber optic communication and Fibre Optical Sensor.Current TO-CAN encapsulation semiconductor laser
Mainly encapsulated using TO56, wavelength has 1310nm, 1490nm, 1550nm etc..Typical TO-CAN encapsulation semiconductor laser utensil
There are structure as shown in Figure 1, including TO tube sockets 1, semiconductor laser chip 2, back light detector chip 3, laser chip pad
Block 4, detection chip cushion block 5, bonding gold wire 6, pin 7, TO pipe caps 8 and lens optical system 9, during actual fabrication, need
Detection chip cushion block 5 is affixed on TO tube sockets 1 with elargol, back light detector chip 3 is affixed on detection chip cushion block 5, is connect
To be integrally placed in baking oven and toast so that elargol cures, so as to achieve the purpose that fixed back light detector, after this sharp
Optical chip cushion block 4 and 2 eutectic of semiconductor laser chip are in heat sink piece 10 of side, when semiconductor laser chip 2 and backlight
, it is necessary to be bonded with spun gold after the completion of detector chip 3 is fixed, drawn so as to fulfill the electrode of chip.Specific backlight is visited
Survey device chip 3 and generally use photodiode chip, that is, PD chips, semiconductor laser chip 2 generally uses laser diode
Chip, that is, LD chips, multiple pins 7 pass through TO tube sockets 1, when carrying out gold wire bonding, two electrodes of PD chips a, wherein pole
Need to be bonded connection with pin Pin2, another pole needs to be bonded connection with pin Pin3, here pin Pin2 and TO tube sockets patch PD
Position be electrically isolated, in order to realize the connection of pin Pin2, Pin3 and PD in conventional package, using a detection chip pad
Block and twice gold wire bonding realize that its technique realizes process as shown in Figure 2, as can be seen from the figure this traditional TO-
In CAN encapsulation semiconductor lasers, the PD chips as back light detector are connected by gold wire bonding twice and pin Pin2, Pin3
Connect.Similarly the LD chips as semiconductor laser chip are connected also by gold wire bonding with pin Pin1, Pin3.In spun gold key
After the completion of conjunction, sealing cap is carried out to device, i.e., TO pipe caps 8 and TO tube sockets 1 are welded together using electric resistance welding, a TO-CAN envelope
The semiconductor laser of dress just completes, and by burn-in test, this laser just can be used in fiber optic communication or Fibre Optical Sensor.
Above-mentioned encapsulation scheme and process are the mainstreams of the current encapsulation of TO in the industry, also experienced the test of engineer application, have
Certain advantage and reasonability.But in this TO-CAN encapsulation semiconductor lasers as industry mainstream, for as the back of the body
There are defect used below by encapsulation operation that gold wire bonding twice and corresponding pin are attached for the PD chips of optical detector：
To PD chips using gold wire bonding twice, cause bonding operation technique relatively complicated, and increase to high cost spun gold
Using improving the cost of laser entirety to a certain extent, reduce market competition advantage；And needed for PD chips
It is special to set detection chip cushion block to be installed, not only complicated mounting process, and also detection chip cushion block is used with TO tube sockets
Elargol is fixed, and is had the danger to come off, be directly affects the quality stability of laser product.Therefore TO- of the prior art
CAN encapsulates semiconductor laser and also there is certain lack in the setting to back light detector chip and packaging technology operation
Fall into, still there is improvable leeway.
The content of the invention
The present invention is based on above-mentioned prior art problem, by long-term innovation experimental study, to this traditional TO-CAN
Encapsulation semiconductor laser has carried out innovation and has improved, especially to the wherein set-up mode of back light detector chip and encapsulation work
Skill process has carried out innovation and has improved, by being installed on back light detector chip in the supporting table being connected with pin Integral design,
The setting of separate backlight detection chip cushion block is not only eliminated, has saved cushion block Material Cost, and pass through back light detector core
Piece and supporting table are electrically directly connected to realize electrically being directly connected to for chip and pin, eliminate back light detector chip with
A gold wire bonding technique between its cushion block, simplifies gold wire bonding operating procedure, and has saved bonding gold wire cost, at the same time
The risk fallen off is reduced with the supporting table of pin Integral design, improves the stability in use of laser product, and
The retroreflection of back light detector chip is minimized to laser overall performance by the table top angle for innovating adjustment supporting table
Influence, substantially increase TO-CAN encapsulation semiconductor laser the market competitiveness.
It is as follows that the present invention solves the technical solution that above-mentioned technical problem is taken：
A kind of TO-CAN encapsulates semiconductor laser, including：TO tube sockets 1, semiconductor laser chip 2, back light detector
Chip 3, bonding gold wire 6, pin 7 and heat sink piece 10, described heat sink piece 10 upper surface for being arranged at the TO tube sockets 1, described half
Conductor laser chip 2 is fixedly installed on described heat sink piece 10 of surface, and the pin 7, which includes at least, three, and each pin
Insulation is fixed on the TO tube sockets 1, and the upper end of at least one pin protrudes from the upper surface setting of the TO tube sockets 1, described
Semiconductor laser chip 2 is connected to corresponding pin 7 by bonding gold wire 6, is protruding from the one of the setting of 1 upper surface of TO tube sockets
It is connected with supporting table 11 on a pin, what one end of the supporting table was connected to the pin protrudes from the upper of 1 upper surface of TO tube sockets
Portion, the other end extend to the lower section of semiconductor laser chip 2, and the back light detector chip 3 is arranged at the supporting table 11
On, and the lower section in the semiconductor laser chip 2.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein with back light detector chip
Electrode is electrically connected and the upper end of a pin of the vertical projected position of close back light detector chip protrudes from the TO tube sockets 1
Upper surface set, and integrally extended to form the supporting table on the top for protruding from 1 upper surface of TO tube sockets of the pin
11, the supporting table 11 is in same current potential with the pin.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein heat sink piece of 10 1 bodily forms
The upper surface of TO tube sockets 1 described in Cheng Yu, described heat sink piece 10 overall to have a halfpace structure, including outer surface, inner wall surface and
Outer surface and the side surface of inner wall surface are connected, the inner wall surface is perpendicular to the upper surface of the TO tube sockets 1, the TO-
CAN encapsulation semiconductor lasers have further included laser chip cushion block 4, and the laser chip cushion block 4 is fixedly installed on described heat sink
In the inner wall surface of block 10, the semiconductor laser chip 2 is fixedly installed on the surface of the laser chip cushion block 4.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein the outer surface is cylinder
Face, the inner wall surface and side surface are plane, and described heat sink piece of height is between 1.3mm-1.5mm.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein the TO tube sockets 1 have circle
Shape structure, the semiconductor laser chip 2 are on the circle central axis of TO tube sockets 1, and the back light detector chip 3 is in institute
State the underface of semiconductor laser chip 2.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein the semiconductor laser core
Piece 2 is LD chips, and the back light detector chip 3 is PD chips, and the LD chips eutectic is welded in the laser chip cushion block 4
Surface on, the PD chips are fixed in the supporting table 11 by conductive silver glue, and two electrodes of the LD chips pass through
Bonding gold wire 6 is electrically connected at two of which pin, and an electrode of the PD chips is electrically connected at one by supporting table 11
A pin, another electrode of the PD chips are electrically connected at another pin by bonding gold wire 6；The LD chips are two-way
Light extraction, the PD chips receive the light extraction backwards of LD chips and provide control feedback information, automatic adjustment to external control circuit
The luminous power of LD chips.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein being set on the TO tube sockets 1
There is a circular through hole, the pin passes through is fixed on the circular through hole after the circular through hole by the insulation of glass fixed bed 12
It is interior.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein the supporting table 11 has length
Cube structure, width is in 0.4mm to 0.9mm, and length is in 1.0mm-1.6mm, and thickness is in 0.2mm-0.6mm.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein having further included 8 He of TO pipe caps
Lens optical system 9, the lens optical system 9 are installed on the TO pipe caps 8, and the TO pipe caps 8 are fixedly installed on described
On TO tube sockets 1.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein the supporting table is relative to TO
The upper surface of tube socket 1 is obliquely installed.
Further TO-CAN encapsulation semiconductor laser according to the present invention, wherein the upper surface of the supporting table
Perpendicular to the surface of heat sink piece 10 setting semiconductor laser chip 2, and the upper surface of the supporting table is relative on TO tube sockets 1
The angle of inclination on surface is in the range of positive and negative 25 degree.
A kind of production method of TO-CAN encapsulation semiconductor laser of the present invention, comprises the following steps：
Step 1: making TO tube sockets, heat sink piece is integrally formed on the upper surface of TO tube sockets, and if being opened up on TO tube sockets
Dry pin circular hole；
Step 2: using LD chips as semiconductor laser chip, using PD chips as back light detector chip, system
Make laser chip cushion block and each pin, and pin is formed integrally with the top portion support table structure wherein；
Step 3: each pin is fixed on TO through insulating by the way of glass sintering after the pin circular hole on TO tube sockets
On tube socket, and cause the free end of the supporting table near heat sink piece of inner wall surface, then to each pin and supporting table
It is overall to carry out the gold-plated operation of nickel plating；
Step 4: TO tube sockets are fixed on fixture, PD chips are fixed on by the supporting table using conductive silver glue first
On, the scheduled time is toasted, then laser chip cushion block is fixed in heat sink piece of inner wall surface by welding or technique for sticking,
Then LD chip eutectics are welded in the surface of laser chip cushion block, and PD chips is in the lower sections of LD chips；
Step 5: carrying out gold wire bonding operation, the corresponding pin of the electrode of LD chips is connected by bonding gold wire first
Connect, then connect the corresponding pin of another electrode not contacted with supporting table of PD chips by bonding gold wire；
Step 6: carrying out sealing cap under the conditions of protective gas, TO pipe caps and TO tube sockets are fused together, wherein TO pipe caps
On lens optical system is installed, complete the making of TO-CAN encapsulation semiconductor lasers.
Following technique effect can at least be reached by technical scheme：
1）, the present invention to traditional TO-CAN encapsulate semiconductor laser in back light detector chip set-up mode and envelope
Dress technical process has carried out innovation and has improved, and innovation is provided with backlight on one of connection pin of back light detector chip
The installation supporting table of detector chip, eliminates the Material Cost of separate backlight detection chip cushion block, it is entirely avoided tradition is visited
The risk that chip cushion block easily comes off is surveyed, improves the stability of product；
2）, the present invention is pioneering that back light detector chip is installed in the supporting table being connected with pin Integral design, and
Electrically it is directly connected to realize the electrical of back light detector chip and corresponding pin by back light detector chip and supporting table
It is directly connected to, eliminates a gold wire bonding technique between back light detector chip and its cushion block, simplifies gold wire bonding behaviour
Make technique, and save bonding gold wire cost；
3）, the present invention by innovate adjustment back light detector chip supporting table table top angle come minimize backlight detect
The light reflection of device chip, farthest reduces the influence that back light detector chip goes out laser optical property, improves TO-
CAN encapsulation semiconductor lasers go out light quality；
4）, the present invention initiated the TO-CAN encapsulation semiconductor lasers of no backlight detection chip cushion block a kind of, belong to pair
The great innovation of current TO-CAN encapsulation semiconductor laser improves, and compared with encapsulating semiconductor laser with traditional TO, outside it
Portion's structure size and circuit pin can keep completely the same, will not be impacted to client using new product, its modified technique
And application can be good at matching with conventional package laser, so that laser of the present invention is reducing packaging technology, drop
Low material cost, raising product quality and stability etc. are respectively provided with unique advantage, represent TO-CAN encapsulation and partly lead
The brand-new developing direction of body laser, has a vast market popularizing application prospect.
Brief description of the drawings
Attached drawing 1 encapsulates the structure diagram of semiconductor laser for tradition TO-CAN；
Attached drawing 2 encapsulates the electrode of back light detector chip and the welding knot of pin in semiconductor laser for tradition TO-CAN
Structure schematic diagram；
Attached drawing 3 encapsulates the dimensional structure diagram of semiconductor laser for TO-CAN of the present invention；
Attached drawing 4 is the overlooking the structure diagram of attached drawing 3；
Attached drawing 5 encapsulates the structure diagram of supporting table in semiconductor laser for TO-CAN of the present invention；
Attached drawing 6 encapsulates the structure diagram that supporting table is obliquely installed in semiconductor laser for TO-CAN of the present invention.
The implication of each reference numeral is as follows in figure：
1-TO tube sockets, 2- semiconductor laser chips, 3- back light detector chips, 4- laser chip cushion blocks, 5- detection cores
Piece cushion block, 6- bonding gold wires, 7- pins, 8-TO pipe caps, 9- lens optical systems, 10- is heat sink piece, 11- supporting tables, 12- glass
Fixed bed.
Embodiment
Technical scheme is described in detail below in conjunction with attached drawing, so that those skilled in the art can be clear
The understanding present invention of Chu, but the protection domain being not intended to limit the present invention.
TO-CAN encapsulation semiconductor lasers are as communication light source device is currently being widely used, its structure is constantly excellent
Change in development, the present invention is based on long-term innovation experimental study, proposes a kind of TO-CAN encapsulation semiconductors of brand new
Laser, substantially improves the comprehensive performance of TO-CAN encapsulation semiconductor lasers, as shown in Figure 3, TO- of the present invention
CAN encapsulation semiconductor lasers include TO tube sockets 1, semiconductor laser chip 2, back light detector chip 3, laser chip cushion block
4th, bonding gold wire 6, pin 7, heat sink piece 10, supporting table 11, TO pipe caps 8 and lens optical system 9,1 conduct of TO tube sockets
The pedestal of whole laser, preferably with circular configuration, the heat sink of sector structure is vertically equipped with the upper surface of TO tube sockets 1
Block 10, described heat sink piece 10 of structure are preferably similar to a halfpace, and outer surface is cylindrical surface, and inner wall surface is plane, even
The side surface for connecing outer cylindrical surface and inner wall interplanar is also plane.Described heat sink piece of height is excellent between 1.3mm-1.5mm
Choosing height is 1.4mm, and described heat sink piece can use the good iron work of heat conductivility, preferably can also be formed as with TO tube sockets 1
Integrative-structure.In described heat sink piece 10 of inner wall surface fixed setting laser chip cushion block 4, the laser chip cushion block 4 welds,
It is bonded or is integrally formed in heat sink piece 10 of inner wall surface.Semiconductor is fixed with the surface of the laser chip cushion block 4
Chip of laser 2, the semiconductor laser chip 2 are preferably laser diode chip, that is, LD chips, the LD chips
Preferable eutectic is welded in the surface of laser chip cushion block 4, and eutectic welding is also metal alloy solder, is referred to relatively low
At a temperature of eutectic disclose that there is a phenomenon where generation brilliant thing fuses, eutectic alloy directly changes to liquid from solid-state, and without plasticity rank
Section, alloy melting temperature claims eutectic temperature here, and eutectic material used in the present invention is gold-tin alloy, its fusion temp is at 270 degree
To between 320 degree, it is not only able to ensure that LD chips are firmly fixed to laser chip cushion block 4 very much using eutectic welding manner
On, and can ensure that LD chips are accurately in fixed positions ideal very much, preferably encapsulated in TO-CAN of the present invention
In semiconductor laser, LD chips are on the central axis of circle TO tube sockets 1（On circle central axis）, the hair of preferable LD chips
Smooth surface, which can be, but not limited to be located at, to be fixed on the focal plane of the lens optical system on TO tube sockets.The LD chips are complete in eutectic
It is connected into rear by gold wire bonding technology on corresponding pin, bonding gold wire both ends are connected to the electrode of LD chips and dash forward
For the corresponding pin on TO tube sockets surface（Attached drawing 1 is can refer to, omits the bonding gold of the LD chips of identical setting in fig. 3
Silk）, for gold wire bonding temperature control at 120 degree or so, gold wire bonding tension intensity is more than 5 grams.The pin 7 passes through TO tube sockets
1 is set, and specifically includes at least 3 pins, includes the positive and negative pin and back light detector core of semiconductor laser chip 2
The positive and negative pin of piece 3, some circular through holes are offered corresponding to each pin on the TO tube sockets 1（Preferred size is diameter
1mm）, each pin is fixed in the circular through hole of TO tube sockets 1 after passing through the circular through hole of TO tube sockets, and ensures each pin 7 and TO
It is electrically insulated between tube socket, the glass that insulation is preferably sealed between pin 7 and the circular through hole inner wall of TO tube sockets 1 is fixed
Layer 12, so that while each pin is firmly secured on TO tube sockets, ensures between each pin and TO tube socket and miscellaneous part
All it is relatively electric every vertical.Each pin such as Pin1, Pin2 and Pin3 are set around the center of circle of the TO tube sockets 1, and are respectively drawn
The upper surface that the upper end of foot protrudes from TO tube sockets is set, and the pin wherein that the present invention innovates, is preferably connected to the back of the body
Supporting table 11, the supporting table are provided with one of pin Pin3 of photo detector chip and close back light detector chip
11 are arranged at the position for protruding from TO tube sockets upper surface of pin Pin3, as shown in figures 3-5, the size ratio of the supporting table 11
Relatively flexibly, as long as can to back light detector chip 3 provide sufficient intensity support and size when being placed in TO tube sockets again
Will not be with other location contacts of TO tube sockets, the preferable supporting table integrally has rectangular parallelepiped structure, and overall width exists
0.4mm to 0.9mm, entire length is in 1.0mm-1.6mm, thickness 0.2mm-0.6mm, the front end of the preferred supporting table
Portion is formed as square structure, and rearward end is formed as circular configuration, and supporting surface width is preferably 0.5mm, 0.6mm or 0.8mm,
It is fixed in rounded back end portion formed with circular through hole, Pin3 pins in the circular through hole, square left hand edge to Pin3 pins
The size in the center of circle is preferably 1.20mm, 1.25mm or 1.30mm, supporting table thickness be preferably 0.2mm, 0.3mm or
0.4mm.The supporting table is electrically connected with pin, and the preferred supporting table is integrally formed at the top of pin, i.e., excellent
Choosing by with want back light detector chip be connected and managed close to one of pin Pin3 of back light detector chip in protrusion TO
Integrally it is extended on the part of seat upper surface and forms the supporting table 11, as shown in Figure 5.It is fixed in the supporting table 11
There is back light detector chip 3, the back light detector chip 3 is preferably photodiode chip, that is, PD chips, the PD
Chip is fixed in supporting table 11 by conductive silver glue, and the supporting table extends to laser chip cushion block 4 from pin Pin3
Lower section, to ensure that the PD chips are in the underface of LD chips, as shown in Figure 4.It is described by being wholely set with pin
Supporting table, and PD chips are pasted in supporting table, so that the PD cushion blocks in original encapsulating structure are instead of, while supporting table is with drawing
The pin of foot Pin3 is integral, belongs to some of pin Pin3, and one layer is coated with using metal material making and in outer surface
Bao Jin strengthens conduction, because pin is electrically isolated with tube socket and miscellaneous part, therefore the supporting table is not carrying out gold wire bonding
Before, it is also opposite with TO tube sockets and miscellaneous part to be electrically isolated, and when PD chips are pasted in supporting table, the one of the PD chips
A electrode is realized with a pin by supporting table and is electrically connected, and such PD chips are only needed by a bonding gold wire and other one
A pin connection, relative to conventional package scheme, not only eliminates PD chip cushion blocks, and eliminates a bonding gold
Silk, while cost is reduced, ensure that the mounting stability of PD chips.The supporting table can be arranged to be detected with backlight
On any one pin that the electrode of device chip 3 is attached, such as it may be disposed on Pin1, Pin2 or Pin3 in attached drawing 3, it is excellent
Choosing is the pin set close to 3 electrode of back light detector chip, in attached drawing 3 by taking pin Pin3 as an example.In back light detector core
Piece 3 is fixedly connected with TO pipe caps 8, so that each component cover by TO tube sockets upper surface shown in attached drawing 3 after installation is complete on TO tube sockets
In TO pipe caps, while lens optical system 9 is installed on TO pipe caps, obtains TO-CAN encapsulation semiconductor lasers,
During energization, semiconductor laser chip launches laser under electric current driving, its wavelength can be 1310nm, 1550nm and its
It, the semiconductor laser chip is preferably the LD chips of two-way light extraction, and the positive light extraction of LD chips passes through optics of lens
System 9 is outwards launched, back light detector chip（PD chips）It is arranged at LD chips backwards, it is monitoring LD chip light emittings that it, which is acted on,
The size of power, and its testing result is passed back external control circuit in real time, so as to provide control feedback, automatically adjust LD chips
Luminous power, make LD chips continually and steadily work and fiber optic communication and sensing in do not introduce error code.
In practical applications, due to back light detector chip（PD chips）May influence semiconductor laser backwards to light reflection
Device chip（LD chips）Work, therefore PD chips and LD chip chambers can be allowed there are certain angle, so as to reduce PD chips
The influence of reflected light.Innovation sets the supporting table of PD chips to be provided a convenient for this angular adjustment in the present invention, preferably such as
Shown in attached drawing 6, the supporting table table top for supporting PD chips is arranged between TO tube socket horizontal planes into predetermined angle to reduce PD
The light reflection of chip, the preferred supporting table table top is perpendicular to the laser chip cushion block surface of support LD chips and heat sink
Block inner wall surface, while the angle between TO tube socket horizontal planes is in the range of positive and negative 25 degree, is preferably in positive and negative 12 degree of models
In enclosing, more preferably in the range of positive and negative 8 degree.
The specific manufacturing process of TO-CAN encapsulation semiconductor laser of the present invention is given further below：
Step 1, make TO tube sockets, the TO tube sockets it is conveniently of circular shape, centre offers three circular through holes（It is excellent
It is diameter 1mm to select size）, heat sink piece 10 is integrally formed on the upper surface of TO tube sockets, its structure is similar to a halfpace, and outer is
Circle, inner wall are plane, its height is between 1.3mm-1.5mm, and preferably height is 1.4mm, its bulk material is iron.
Step 2, make each separating component and pin Pin, and the upper end of one of which pin such as Pin3 sets one
Body protrudes cushion block of the supporting table of structure as back light detector chip, and the supporting table can be vertical with Pin3 pins or slightly inclines
Tiltedly（Positive and negative 12 degree）Set, to reduce influence of the back light detector chip reflection to laser performance, the supporting table and pin
It is integrally formed, material is mainly iron or the electrical conductivity alloy using iron as main material, and the Assurance of Size of supporting table can be by backlight
Detector chip is supported in the underface of semiconductor laser chip and does not contact miscellaneous part.Semiconductor laser chip uses
Traditional LD chips, back light detector chip can use tradition LD cushion block structures using traditional PD chips, laser chip cushion block.
Step 3, after pin, tube socket and other each components all complete respectively, by each pin through on TO tube sockets
Circular through hole after insulated and be fixed on TO tube sockets by the way of glass sintering, and ensure the branch set on a pin
The inner wall surface that platform is supportted close to heat sink piece is set, then gold-plated to each pin and supporting table Entire nickel coating, improves its electric conductivity, by
It is non-conductive in glass, herein will not plated with gold, be still within electric isolution state at electric isolution originally.Here gold plating thickness can be with
It is 0.1um to 0.3um, preferably 0.25um.
Step 4, be fixed on TO tube sockets on special fixture, and back light detector chip is fixed using conductive silver glue first
In in the supporting table of pin Pin3, certain time is toasted, is slightly different according to using elargol difference, its baking temperature and time,
It is general using 85 degrees Celsius, half an hour baking time it is more reasonable, and default detector chip position is to ensure detector chip
The lower section of semiconductor laser chip can be in, is preferably in immediately below it or near it, then passes through welding or technique for sticking
Laser chip cushion block is fixed in heat sink piece of inner wall surface, then carries out semiconductor laser chip and laser chip cushion block
Between eutectic welding, using gold-tin alloy, control fusion temp between 270 degree to 320 degree, semiconductor laser chip is total to
Crystalline substance is welded in laser chip cushion block surface, and enables detector chip to be in the lower section of semiconductor laser chip；
Step 5, carry out gold wire bonding operation, first by the electrode of semiconductor laser chip and corresponding connection pin
（Pin1 and Pin3）Connected using bonding gold wire, then by back light detector chip（First electrode where supporting table with drawing
Foot is electrically connected）Another electrode and corresponding connection pin（Pin2）Connected using bonding gold wire, gold wire bonding temperature control is 120
Degree left and right, gold wire bonding tension intensity are more than 5 grams.
Step 6, finally carry out sealing cap under the conditions of protective gas, using energy storage welding manner, TO pipe caps and TO tube sockets
Welding is in one in the case of high current, is wherein provided with lens optical system on TO pipe caps in advance, to device after the completion of sealing cap
It is tested for the property, aging and surveys eventually, completes whole TO-CAN encapsulation semiconductor laser.
The external structure size and interface of TO-CAN encapsulation semiconductor laser of the present invention and one with conventional package
Cause, client can be easy to use and circuit and external dimensions need not be improved, added burden not caused to client, especially
For widely applied TO56 encapsulated lasers, no PD cushion blocks but contain MPD（Back light detector chip）, external dimensions can not
Become, this supporting table that introduces replaces PD cushion blocks also to can be used for other similar TO encapsulation, and supporting table also may be provided at any pin and draw
Foot.Such scheme provided by the present invention is a kind of brand-new the changing of the TO-CAN encapsulation semiconductor lasers of no backlight chip cushion block
Into scheme, Material Cost is saved by saving backlight cushion block, while reduce a cushion block technique for sticking and gold wire bonding work
Skill, the reduction to spun gold application can substantially reduce product cost, and in addition, optical device has reliability in engineer application
Be strict with, in conventional package MPD cushion blocks and the fixation of TO tube sockets use elargol, there is the risk that comes off necessarily, and this hair
The bright PD chip supporting tables used are one complete overall with pin, the risk that cushion block comes off will not be produced, so as to improve device
Part stability.Therefore the scheme generation provided by the present invention by the supporting table of backlight detection PD chips with being connected pin integral production
The optimal improvement project of table TO-CAN encapsulation semiconductor lasers, and it is cost-effective, simplify technique, carry it is high performance optimal
Improvement project, belongs to the developing direction of TO of future generation encapsulation semiconductor laser, can large-scale application in fiber optic communication and optical fiber
Among sensing.
It the above is only and the preferred embodiment of the present invention is described, technical scheme is not limited to
This, any known deformation that those skilled in the art are made on the basis of the major technique design of the present invention belongs to the present invention
Claimed technology category, the specific protection domain of the present invention are subject to the record of claims.
Claims (10)
1. a kind of TO-CAN encapsulates semiconductor laser, it is characterised in that including：TO tube sockets（1）, semiconductor laser chip
（2）, back light detector chip（3）, bonding gold wire（6）, pin（7）With heat sink piece（10）, described heat sink piece（10）It is arranged at institute
State TO tube sockets（1）Upper surface, the semiconductor laser chip（2）It is fixedly installed on described heat sink piece（10）Surface, institute
State pin（7）Including at least there is three, and the TO tube sockets are fixed in the insulation of each pin（1）On, the upper end of at least one pin
Protrude from the TO tube sockets（1）Upper surface set, the semiconductor laser chip（2）Pass through bonding gold wire（6）It is connected to
Corresponding pin（7）, protruding from TO tube sockets（1）Supporting table is connected with the pin that upper surface is set（11）, the branch
What one end of support platform was connected to the pin protrudes from TO tube sockets（1）The top of upper surface, the other end extend to semiconductor laser
Chip（2）Lower section, the back light detector chip（3）It is arranged at the supporting table（11）On, and swash in the semiconductor
Light device chip（2）Lower section.
2. TO-CAN according to claim 1 encapsulates semiconductor laser, it is characterised in that with back light detector chip
Electrode is electrically connected and the upper end of a pin of the vertical projected position of close back light detector chip protrudes from the TO tube sockets
（1）Upper surface set, and protrude from TO tube sockets in the pin（1）The top of upper surface has integrally extended to form the branch
Support platform（11）, the supporting table（11）Same current potential is in the pin.
3. TO-CAN according to claim 1 encapsulates semiconductor laser, it is characterised in that described heat sink piece（10）One
It is formed at the TO tube sockets（1）Upper surface, described heat sink piece（10）It is overall that there is halfpace structure, including outer surface, inner wall
Surface and connection outer surface and the side surface of inner wall surface, the inner wall surface is perpendicular to the TO tube sockets（1）Upper surface,
The TO-CAN encapsulation semiconductor laser has further included laser chip cushion block（4）, the laser chip cushion block（4）Fixed setting
In described heat sink piece（10）Inner wall surface on, the semiconductor laser chip（2）It is fixedly installed on the laser chip pad
Block（4）Surface on.
4. TO-CAN according to claim 3 encapsulates semiconductor laser, it is characterised in that the TO tube sockets（1）Have
Circular configuration, the semiconductor laser chip（2）In TO tube sockets（1）Circle central axis on, the back light detector chip
（3）In the semiconductor laser chip（2）Underface.
5. TO-CAN according to claim 3 encapsulates semiconductor laser, it is characterised in that the semiconductor laser core
Piece（2）For LD chips, the back light detector chip（3）For PD chips, the LD chips eutectic is welded in the laser chip
Cushion block（4）Surface on, the PD chips are fixed on the supporting table by conductive silver glue（11）On, two of the LD chips
Electrode passes through bonding gold wire（6）Two of which pin is electrically connected at, an electrode of the PD chips passes through supporting table（11）
A pin is electrically connected at, another electrode of the PD chips passes through bonding gold wire（6）It is electrically connected at another pin；
The two-way light extraction of LD chips, the PD chips receive being fed back backwards to light extraction and to external control circuit offer control for LD chips
Information, automatically adjusts the luminous power of LD chips.
6. semiconductor laser is encapsulated according to claim 1-5 any one of them TO-CAN, it is characterised in that the TO tube sockets
（1）On be provided with circular through hole, the pin passes through glass fixed bed after passing through the circular through hole（12）Institute is fixed in insulation
State in circular through hole；The supporting table（11）With rectangular parallelepiped structure, width is in 0.4mm to 0.9mm, and length is in 1.0mm-
1.6mm, thickness is in 0.2mm-0.6mm.
7. semiconductor laser is encapsulated according to claim 1-5 any one of them TO-CAN, it is characterised in that further included TO
Pipe cap（8）And lens optical system（9）, the lens optical system（9）It is installed on the TO pipe caps（8）On, the TO pipe caps
（8）It is fixedly installed on the TO tube sockets（1）On.
8. semiconductor laser is encapsulated according to claim 1-5 any one of them TO-CAN, it is characterised in that the supporting table
Relative to TO tube sockets（1）Upper surface be obliquely installed.
9. TO-CAN according to claim 8 encapsulates semiconductor laser, it is characterised in that the upper surface of the supporting table
Perpendicular to heat sink piece（10）Semiconductor laser chip is set（2）Surface, and the upper surface of the supporting table is managed relative to TO
Seat（1）The angle of inclination of upper surface is in the range of positive and negative 25 degree.
A kind of 10. production method of any one of claim 1-5 TO-CAN encapsulation semiconductor lasers, it is characterised in that
Comprise the following steps：
Step 1: making TO tube sockets, heat sink piece is integrally formed on the upper surface of TO tube sockets, and some draw is opened up on TO tube sockets
Foot circular hole；
Step 2:, using PD chips as back light detector chip, make and swash as semiconductor laser chip using LD chips
Optical chip cushion block and each pin, and pin is formed integrally with the top portion support table structure wherein；
Step 3: each pin is fixed on TO tube sockets through insulating by the way of glass sintering after the pin circular hole on TO tube sockets
On, and cause the free end of the supporting table near heat sink piece of inner wall surface, it is then overall to each pin and supporting table
Carry out the gold-plated operation of nickel plating；
Step 4: TO tube sockets are fixed on fixture, PD chips are fixed in the supporting table using conductive silver glue first, are dried
The roasting scheduled time, then laser chip cushion block is fixed in heat sink piece of inner wall surface by welding or technique for sticking, then
LD chip eutectics are welded in the surface of laser chip cushion block, and PD chips is in the lower sections of LD chips；
Step 5: carrying out gold wire bonding operation, the corresponding pin of the electrode of LD chips is connected by bonding gold wire first, is connect
And connect the corresponding pin of another electrode not contacted with supporting table of PD chips by bonding gold wire；
Step 6: carrying out sealing cap under the conditions of protective gas, TO pipe caps and TO tube sockets are fused together, wherein pacified on TO pipe caps
Equipped with lens optical system, the making of TO-CAN encapsulation semiconductor lasers is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510422157.8A CN105261929B (en) | 2015-07-17 | 2015-07-17 | A kind of semiconductor laser of TO-CAN encapsulation and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510422157.8A CN105261929B (en) | 2015-07-17 | 2015-07-17 | A kind of semiconductor laser of TO-CAN encapsulation and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN105261929A CN105261929A (en) | 2016-01-20 |
| CN105261929B true CN105261929B (en) | 2018-05-04 |
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| CN201510422157.8A Expired - Fee Related CN105261929B (en) | 2015-07-17 | 2015-07-17 | A kind of semiconductor laser of TO-CAN encapsulation and preparation method thereof |
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| CN111162444B (en) * | 2019-12-31 | 2021-08-17 | 芯思杰技术(深圳)股份有限公司 | Chip packaging method |
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| CN114552367A (en) * | 2022-02-17 | 2022-05-27 | Nano科技(北京)有限公司 | Light emitting device |
| CN116780329B (en) * | 2023-05-31 | 2024-04-16 | 河北杰微科技有限公司 | Refrigeration type laser TO packaging structure and packaging method thereof |
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