CN105261662B - A kind of solar cell chip with diffusion junctions bypass diode - Google Patents
A kind of solar cell chip with diffusion junctions bypass diode Download PDFInfo
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- CN105261662B CN105261662B CN201510691326.8A CN201510691326A CN105261662B CN 105261662 B CN105261662 B CN 105261662B CN 201510691326 A CN201510691326 A CN 201510691326A CN 105261662 B CN105261662 B CN 105261662B
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- solar cell
- bypass diode
- diffusion
- diffusion junctions
- junctions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention discloses a kind of solar cell chip with diffusion junctions bypass diode, includes from top to bottom：Front electrode, the solar cell photoelectric conversion layer including launch site and base and the first mutually isolated backplate, the second backplate, the base lower surface has a regional area diffusion junctions, the diffusion junctions are located at the side of battery chip, first backplate is covered but the part of diffusion into the surface is not carried out without departing from base, and second backplate is covered but without departing from described diffusion junctions surface.The bypass diode of present invention design is used to protect adjacent cell piece in battery strings, and chip technology is simple, without forming the bypass diode with cell photoelectric conversion layer mechanical isolation through repeatedly diffusion, etching；Bypass diode is located at the cell piece back side, is not take up battery surface illuminating area；Base is simultaneously as photoelectric conversion layer and the positive pole of bypass diode（Or negative pole）, reduce power attenuation.
Description
Technical field
The present invention relates to a kind of solar cell chip with diffusion junctions bypass diode, belong to semiconductor photoelectronic device
With technical field.
Background technology
Solar cell is one of important clean energy resource, due to the dispersiveness of solar energy, forms the power-supply system of scale
All connection in series-parallel must be carried out using a large amount of solar cell pieces, the problem thus brought is, once it is wherein a piece of in series-parallel network
Cell piece is failed, and the generated output of whole network will be caused to decline to a great extent；Meanwhile, the cell piece of failure is equivalent to a load, shape
The dead battery piece will be caused to be subject to irreversible breaking, that is, whole network can not be subject to so-called hot spot, under long-time load
Can reverse efficiency decay, or even whole network failure.Therefore, generally all can be every cell piece one backward dioded of parallel connection, claim other
Road diode, under normal operating conditions, bypass diode because reversal connection is in cell piece, equivalent to open circuit；And work as a certain cell piece
Failure, in off position, bypass diode is series at adjacent cell piece in forward direction, is turned on compared with low pressure drop, it is ensured that
The normal operation of whole network.However, adding bypass diode, on the one hand, increased the complicated journey of cost and packaging technology
Degree, on the other hand, for non-concentrating battery system, such as space application battery, due to battery close-packed arrays, bypass diode will be accounted for
With larger a part of area, the utilization of sunshine is reduced, and for concentrator cell system, the electricity of solid matter is needed also exist at some
In cell system, such as electric heating coproduction battery system, then cannot realize that every cell piece configures a bypass diode.At present, one
In a little solar cells, bypass diode is integrated on cell piece, i.e., a part of area is isolated in cell piece and is made two poles
Pipe, simplifies battery packaging technology, while the illuminating area of bypass diode occupancy is also reduced to a certain extent, however, this
The method of kind still fails to avoid the waste of illuminating area completely, and prior, and this method is only applicable to smaller photogenerated current
In the case of, because bypass diode allows the electric current for passing through to be directly proportional to its p-n junction area, photogenerated current is bigger, it is desirable to bypass
Diode area is also bigger, and such as in concentrator cell, bypass diode will take more than 30% illuminating area, it is clear that be uncomfortable
.
The content of the invention
Regarding to the issue above, the present invention discloses a kind of solar cell chip with diffusion junctions bypass diode, it is described too
Positive electricity chamber chip includes from top to bottom：Front electrode, the solar cell photoelectric conversion layer including launch site and base and mutually
First backplate, second backplate of isolation, the base lower surface have a regional area diffusion junctions, the diffusion junctions
Positioned at the side of battery chip, first backplate covers but the part of diffusion into the surface is not carried out without departing from base, described
Second backplate is covered but without departing from described diffusion junctions surface.
Preferably, the front electrode is smooth surface electrode, and it is metal electrode of the grating or transparency conducting layer, comprising at least
One connect band pad；
Preferably, there is provided a solar cell substrate, formed by diffusion technique in the solar cell substrate upper surface and launched
Area, the part that the launch site lower section is not spread is used as base；
Preferably, the regional area diffusion junctions are located at base lower surface, same with described launch site once to diffuse to form；
Preferably, the solar cell chip is multijunction compound battery, comprising an epitaxial substrate, and using MOCVD or
MBE is in extension Grown photoelectric conversion layer；
Preferably, the regional area diffusion junctions are located at the multijunction compound solar cell epitaxial substrate lower surface, institute
Stating epitaxial substrate can function only as substrate, or the knot battery of multijunction cell bottommost one, and the epitaxial substrate pole
Property is identical with base；
Preferably, the regional area diffusion junction area determines according to photogenerated current size, it is preferable that by diffusion junctions electricity
Current density is not more than 70mA/mm2；
Preferably, first backplate is covered but without departing from the base without diffusion；
Preferably, second backplate is located at the regional area diffusion junctions central area, and without departing from diffusion junctions
Scope.
The bypass diode of present invention design is used to protect adjacent cell piece in battery strings, and its advantage includes：
（1）For silion cell, bypass diode diffusion junctions are formed with launch site via One Diffusion Process；Being tied for compound more
Battery, it is only necessary to which One Diffusion Process forms bypass diode, and in the bypass diode manufacturing process of above two solar cell, equal nothing
Etch process need to be experienced, therefore, the structure and manufacture craft of a kind of solar cell chip proposed by the present invention are simple, without through many
Secondary diffusion, etching form the bypass diode with cell photoelectric conversion layer mechanical isolation；
（2）Base is simultaneously as photoelectric conversion layer and the positive pole of bypass diode（Or negative pole）, by-pass current is directly from base
Area enters bypass diode, reduces power attenuation；
（3）Bypass diode of the invention is located at the cell piece back side, is not take up battery surface illuminating area.
Brief description of the drawings
Fig. 1 illustrates to provide a silicon solar cell substrate or a multijunction compound solar cell epitaxial wafer.
Fig. 2 is illustrated by One Diffusion Process, launch site is formed in solar cell substrate upper surface, under solar cell substrate
Surface regional area forms diffused junction diode.
Fig. 3 is the back side top view of Fig. 2.
Fig. 4 illustrates to deposit first, second backplate.
Fig. 5 is the back side top view of Fig. 4.
Fig. 6 illustrates to deposit front electrode on launch site surface.
Fig. 7 is the front plan view of Fig. 6.
Fig. 8 illustrates the connected mode that a kind of solar cell chip with diffusion junctions bypass diode forms battery strings,
It is profile.
Fig. 9 illustrates the connected mode that a kind of solar cell chip with diffusion junctions bypass diode forms battery strings,
It is front plan view.
Figure 10 illustrates the connected mode that a kind of solar cell chip with diffusion junctions bypass diode forms battery strings,
It is back side top view.
In figure：001：Solar cell substrate；001a：Launch site；001b：Base；002：Diffusion junctions bypass diode；003：
First backplate；004：Second backplate；005：Front electrode.
Specific embodiment
With reference to embodiment, the invention will be further described, but should not be limited the scope of the invention with this.
Embodiment 1
（1）As shown in Figure 1, there is provided a silicon solar cell substrate 001, it is p-type；
（2）As shown in Figures 2 and 3, the lower surface in the upper surface of silicon solar cell substrate 001 and part spreads phosphorus, respectively shape
Into the launch site 001a and the diffusion junctions bypass diode 002 of back side regional area of N-shaped, the positive pole of the diffusion junctions bypass diode
（P-type layer）Simultaneously solar cell photoelectric conversion layer, divergent contour are constituted as base 001b, the launch site 001a and base 001b
Into n-layer be the negative pole of diffusion junctions bypass diode 002, positioned at the side of battery chip, its area is according to solar cell core
Depending on piece photogenerated current size so that be no more than 70mA/mm by the current density size of diffusion junctions bypass diode 0022；
（3）As shown in Figures 4 and 5, the first backplate 003 of deposition, the second backplate 004, wherein the first backplate
003 covering but the part of diffusion into the surface is not carried out without departing from base 001b, as battery chip positive pole, the second backplate 004
Cover but without departing from the described surface of diffusion junctions bypass diode 002, as the negative pole of diffusion junctions bypass diode 002；
（4）As shown in Figures 6 and 7, front electrode 005 is prepared, it comprises at least a connect band pad, and some grid lines electricity
Pole, is obtained solar cell chip；
（5）As shown in Fig. 8 ~ Fig. 9, foregoing solar cell chip is connected by connect band, then by by the diffusion junctions
The negative pole of road diode 002 is connected with the positive pole 003 of adjacent battery chip, when wherein a piece of cell piece failure, in battery strings
The diffusion junctions bypass diode 002 of the upper a piece of chip via chip failing is flowed directly into chip failing positive pole 003 by electric current, from
And reach the purpose of shielding failure chip.
Embodiment 2
（1）As shown in Figure 1, there is provided a silicon solar cell substrate 001, it is N-shaped；
（2）As shown in Figures 2 and 3, in silicon solar cell substrate upper surface and the lower surface diffused with boron of part, p is formed respectively
The launch site 001a of type and the diffusion junctions bypass diode 002 of back side regional area, the negative pole of the diffusion junctions bypass diode 002
（N-layer）Simultaneously solar cell photoelectric conversion layer, divergent contour are constituted as base 001b, the launch site 001a and base 001b
Into p-type layer be the positive pole of diffusion junctions bypass diode 002, positioned at the side of battery chip, its area is according to solar cell core
Depending on piece photogenerated current size so that be no more than 70mA/mm by the current density size of diffusion junctions bypass diode 0022；
（3）As shown in Figures 4 and 5, mutually isolated the first backplate 003, the second backplate 004 is deposited, wherein the
One backplate 003 covers but the part of diffusion into the surface is not carried out without departing from base 001b, used as battery chip negative pole, second back of the body
Face electrode 004 is covered but without departing from the described surface of diffusion junctions bypass diode 002, used as diffusion junctions bypass diode 002
Positive pole；
（4）As shown in Figures 6 and 7, front electrode 005 is prepared, it comprises at least a connect band pad, and some grid lines electricity
Pole, is obtained solar cell chip.
Embodiment 3
（1）As shown in Figure 1, there is provided a compound solar cell epitaxial wafer, its photoelectric conversion layer is GaInP/InGaAs/Ge
Three junction batteries, each sub- battery base be p-type, launch site be N-shaped, wherein Ge as compound solar cell epitaxial substrate, together
When again as the 3rd sub- battery, Ge substrates are p-type；
（2）As shown in Figures 2 and 3, phosphorus is spread in Ge substrate backs regional area, p/n diffusion junctions is formed, by diffusion junctions
Road diode 002, positioned at the side of battery chip, the diffusion junction area is according to solar cell chip photogenerated current size
It is fixed so that 70mA/mm is no more than by the current density size of diffusion junctions bypass diode 0022；
（3）As shown in Figures 4 and 5, mutually isolated the first backplate, the second backplate is deposited, wherein first back side
Electrode covers but the part of diffusion into the surface is not carried out without departing from base, as battery chip positive pole, the covering of the second backplate but
Without departing from the described surface of diffusion junctions bypass diode 002, as the negative pole of diffusion junctions bypass diode 002；
（4）As shown in Figures 6 and 7, front electrode is prepared, it comprises at least a connect band pad, and some gate line electrodes.
Embodiment 4
（1）As shown in Figure 1, there is provided a GaInP/InGaAs/GaAs Double Junction Tandem Solar Cells epitaxial wafers, its photoelectric conversion layer is
GaInP/InGaAs binode batteries, individual sub- battery base is p-type, launch site is N-shaped, and wherein GaAs, only as epitaxial substrate, is p
Type；
（2）As shown in Figures 2 and 3, p/n diffusion junctions are diffuseed to form in GaAs substrate back regional areas, by diffusion junctions
Road diode 002, positioned at the side of battery chip, the diffusion junction area is according to solar cell chip photogenerated current size
It is fixed so that 70mA/mm is no more than by the current density size of diffusion junctions bypass diode 0022；
（3）As shown in Figures 4 and 5, mutually isolated the first backplate, the second backplate is deposited, wherein first back side
Electrode covers but the part of diffusion into the surface is not carried out without departing from base, as battery chip positive pole, the covering of the second backplate but
Without departing from the described surface of diffusion junctions bypass diode 002, as the negative pole of diffusion junctions bypass diode 002；
（4）As shown in Figures 6 and 7, front electrode is prepared, it comprises at least a connect band pad, and some gate line electrodes.
Claims (7)
1. a kind of solar cell chip with diffusion junctions bypass diode, the solar cell chip includes from top to bottom：Just
Face electrode, the solar cell photoelectric conversion layer including launch site and base and the first mutually isolated backplate, second back of the body
Face electrode, the base lower surface has a regional area diffusion junctions, and the diffusion junctions pass through with a divergent contour with launch site
Into the diffusion junctions are located at the side of battery chip, and first backplate is covered but do not carry out surface expansion without departing from base
Scattered part, second backplate is covered but without departing from the diffusion junctions surface.
2. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterised in that：Institute
Front electrode i.e. smooth surface electrode is stated, it is metal electrode of the grating or transparency conducting layer, comprising an at least connect band pad.
3. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterised in that：Carry
For a solar cell substrate, launch site, the launch site lower section are formed by diffusion technique in the solar cell substrate upper surface
The part do not spread is used as base.
4. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterised in that：Institute
Solar cell chip is stated for multijunction compound solar cell, comprising an epitaxial substrate, and using MOCVD or MBE in epitaxial substrate
Upper growth photoelectric conversion layer.
5. a kind of solar cell chip with diffusion junctions bypass diode according to claim 4, it is characterised in that：Institute
Regional area diffusion junctions are stated positioned at the multijunction compound solar cell epitaxial substrate lower surface, the epitaxial substrate functions only as lining
Bottom, or as the knot battery of multijunction cell bottommost one, and the epitaxial substrate polarity is identical with base.
6. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterised in that：Institute
State regional area diffusion junction area to determine according to photogenerated current size, 70mA/mm is not more than by diffusion junctions current density2。
7. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterised in that：Institute
The second backplate is stated positioned at the regional area diffusion junctions central area, and without departing from diffusion junctions scope.
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| CN201510691326.8A CN105261662B (en) | 2015-10-23 | 2015-10-23 | A kind of solar cell chip with diffusion junctions bypass diode |
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| CN201510691326.8A CN105261662B (en) | 2015-10-23 | 2015-10-23 | A kind of solar cell chip with diffusion junctions bypass diode |
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| CN105261662B true CN105261662B (en) | 2017-07-07 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679864A (en) * | 2016-03-21 | 2016-06-15 | 中国科学院半导体研究所 | Solar cell module integrated from silicon cell and chip-type backward diode and production method of solar cell module |
| CN109686799A (en) * | 2019-01-24 | 2019-04-26 | 中国科学院半导体研究所 | Solar cell module |
| CN113964227A (en) * | 2020-07-21 | 2022-01-21 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module |
| CN114122173B (en) * | 2020-08-27 | 2022-11-11 | 中国科学院半导体研究所 | Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method |
| CN112289877B (en) * | 2020-10-30 | 2022-06-07 | 中国电子科技集团公司第十八研究所 | Bypass diode module for flexible thin film solar cell module |
Citations (4)
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|---|---|---|---|---|
| CN1120245A (en) * | 1994-04-28 | 1996-04-10 | 夏普株式会社 | Solar cell and a method of manufacturing thereof |
| US6452086B1 (en) * | 1998-10-05 | 2002-09-17 | Astrium Gmbh | Solar cell comprising a bypass diode |
| CN201345367Y (en) * | 2008-12-30 | 2009-11-11 | 上海交大泰阳绿色能源有限公司 | Battery plate for avoiding generating warm spot |
| CN101950772A (en) * | 2010-08-05 | 2011-01-19 | 中山大学 | Preparation method of crystalline silicon solar cell with bypass diode |
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- 2015-10-23 CN CN201510691326.8A patent/CN105261662B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120245A (en) * | 1994-04-28 | 1996-04-10 | 夏普株式会社 | Solar cell and a method of manufacturing thereof |
| US6452086B1 (en) * | 1998-10-05 | 2002-09-17 | Astrium Gmbh | Solar cell comprising a bypass diode |
| CN201345367Y (en) * | 2008-12-30 | 2009-11-11 | 上海交大泰阳绿色能源有限公司 | Battery plate for avoiding generating warm spot |
| CN101950772A (en) * | 2010-08-05 | 2011-01-19 | 中山大学 | Preparation method of crystalline silicon solar cell with bypass diode |
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