CN105259720A - 阵列基板以及使用该阵列基板的显示面板 - Google Patents
阵列基板以及使用该阵列基板的显示面板 Download PDFInfo
- Publication number
- CN105259720A CN105259720A CN201510692583.3A CN201510692583A CN105259720A CN 105259720 A CN105259720 A CN 105259720A CN 201510692583 A CN201510692583 A CN 201510692583A CN 105259720 A CN105259720 A CN 105259720A
- Authority
- CN
- China
- Prior art keywords
- lead
- wire
- connecting portion
- hole
- array base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims description 22
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Geometry (AREA)
- Nonlinear Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
一种阵列基板。所述阵列基板包括多个薄膜晶体管、多条功能线、多条引线、多个连接部以及驱动器,所述驱动器用于为所述功能线提供驱动信号,所述功能线用于将所述驱动信号传递至所述薄膜晶体管,所述引线与所述驱动器电性连接,所述功能线与所述引线通过所述连接部电性连接,所述引线包括第一引线与第二引线,所述第一引线的长度大于所述第二引线的长度,所述第一引线与所述连接部的接触面积大于所述第二引线与所述连接部的接触面积。还有必要提供一种使用该阵列基板的显示面板。相较于现有技术,本发明阵列基板以及使用该阵列基板的显示面板各条功能线上传输的驱动信号趋于均衡,能够提供稳定的画面显示。
Description
技术领域
本发明涉及一种阵列基板以及使用该阵列基板的显示面板。
背景技术
液晶显示面板通常包括一阵列基板、一彩色滤光片基板和夹在该两个基板之间的液晶层,其是通过施加电压以控制液晶层中的液晶分子扭转而实现控制光的通过率,从而达到显示的目的。然而,由于阵列基板中的驱动器施加电压后,各条功能线上传输的驱动信号经常不均衡,从而导致显示画面亮度不均衡的问题。因此,业界迫切需要一种能够均衡传输驱动信号的阵列基板,以及一种能够以均衡亮度显示画面的显示面板。
发明内容
鉴于以上内容,有必要提供一种阵列基板。所述阵列基板包括多个薄膜晶体管、多条功能线、多条引线、多个连接部以及驱动器,所述驱动器用于为所述功能线提供驱动信号,所述功能线用于将所述驱动信号传递至所述薄膜晶体管,所述引线与所述驱动器电性连接,所述功能线与所述引线通过所述连接部电性连接,所述引线包括第一引线与第二引线,所述第一引线的长度大于所述第二引线的长度,所述第一引线与所述连接部的接触面积大于所述第二引线与所述连接部的接触面积。
还有必要提供一种使用该阵列基板的显示面板。所述显示面板包括所述阵列基板。
相较于现有技术,本发明阵列基板以及使用该阵列基板的显示面板各条功能线上传输的驱动信号趋于均衡,能够提供稳定的画面显示。
附图说明
图1是本发明具体实施方式所提供的显示面板的示意图。
图2是图1中阵列基板的俯视图。
图3是本发明第一实施方式中第二连接部的俯视图。
图4是沿图3中IV-IV切割线所形成的剖面示意图。
图5是本发明第一实施方式中第一连接部的俯视图。
图6是本发明第二实施方式中第二连接部的俯视图。
图7为本发明第二实施方式中第一连接部的俯视图。
主要元件符号说明
显示面板 | 1 |
阵列基板 | 10 |
对向基板 | 20 |
液晶层 | 30 |
显示区 | 11 |
周边区 | 12 |
扫描线 | 13 |
数据线 | 14 |
像素区域 | 15 |
薄膜晶体管 | 151 |
像素电极 | 152 |
驱动器 | 16 |
连接部 | 17 |
引线 | 18 |
第一数据线 | 141 |
第二数据线 | 142 |
第一引线 | 171 |
第二引线 | 172 |
第一连接部 | 181 |
第二连接部 | 182 |
基底 | 120 |
第一绝缘层 | 130 |
第二绝缘层 | 140 |
第一通孔 | 143 |
第二通孔 | 144 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
如图1所示,本发明实施方式之显示面板1包括阵列基板10、对向基板20以及夹在所述阵列基板10与对向基板20之间的液晶层30。在本实施方式中,所述对向基板20为彩色滤光片基板。所述液晶层30包括液晶分子。所述阵列基板10用于控制施加电压以控制液晶层30中的液晶分子扭转而实现控制光的通过率,从而达到显示的目的。所述对向基板20包括不同颜色的光阻,可以分别透过不同颜色的光线,如红、绿、蓝等。
如图2所示,本发明实施例之阵列基板10定义有显示区11和周边区12。所述显示区11包括相互交叉设置的多条扫描线13与多条数据线14,所述多条扫描线13与多条数据线14构成多个以阵列式排布的像素区域15。所述扫描线13与数据线14作为所述阵列基板10的功能线,用于对所述显示区11内的像素区域15提供电信号。扫描线13与数据线14之间相互绝缘。基于导电性,所述扫描线13及数据线14一般使用金属材料,也可为合金材料、金属氧化物材料、金属氮化物材料、金属氮氧化物材料或其他可导电材料。结构上看,扫描线13和数据线14可以是单层,也可以是堆栈层,堆栈层可以是一种钼(Mo)-铝(Al)-钼(Mo)的结构。
所述每个像素区域15包括薄膜晶体管151及像素电极152。薄膜晶体管151可以是底部栅极型薄膜晶体管(BottomGateTFT)或顶部栅极型薄膜电晶体(TopGateTFT),其包括栅极(GateElectrode)、沟道(Channel)、源极(SourceElectrode)和漏极(DrainElectrode)。薄膜晶体管151均与对应的一条扫描线13和对应的一条数据线14电性连接。薄膜晶体管151还与像素电极152电性连接。所述像素电极152为透明电极,其材质可以是氧化铟锡、氧化铟锌等透明材质。
所述周边区12包括驱动器16、多个连接部17以及多条引线18。所述引线18的一端与所述驱动器16电性连接。所述引线18的另一端与所述连接部17电性连接。所述连接部17将所述功能线与所述引线18电性连接。从而,所述驱动器16与所述功能线通过所述连接部17及引线18电性连接。在本实施方式中,所述功能线为数据线14,所述驱动器16为数据驱动器。在本实施方式中,所述引线18与所述扫描线13是经过同一掩膜蚀刻制程所形成的。所述连接部17与所述像素电极152是通过同一掩膜蚀刻制程所形成的。所述引线18的材质与所述扫描线13的材质相同。所述连接部17的材质与所述像素电极152的材质相同。
在本实施方式中,所述驱动器16对应所述阵列基板10靠近中间的位置设置。所述引线18呈扇形结构布局,与远离所述驱动器16的数据线14电性连接的引线18的长度大于与靠近所述驱动器16的数据线14电性连接的引线18的长度。为方便阐述本发明,现特选择其中的第一数据线141、第二数据线142、第一引线181、第二引线182、第一连接部171以及第二连接部172来阐述本发明。所述第一数据线141通过所述第一连接部171与所述第一引线181电性连接,并进一步通过所述第一引线181与所述驱动器16电性连接。所述第二数据线142通过所述第二连接部172与所述第二引线182电性连接,并进一步通过所述第二引线182与所述驱动器16电性连接。在本实施方式中,所述第一数据线141与所述驱动器16之间的距离大于所述第二数据线142与所述驱动器16之间的距离。所述第一引线181的长度大于所述第二引线182的长度。在本实施方式中,所述数据线14、引线18以及连接部17分别由不同导电层经掩膜蚀刻而形成。
图3是所述第二连接部172的俯视图。图4是沿图3中IV-IV切割线所做的剖面示意图。请一并参阅图3与图4,所述阵列基板10还包括基底120、第一绝缘层130与第二绝缘层140。所述引线18形成在所述基底120上。所述第一绝缘层130形成在所述基底120上并覆盖所述引线18。所述数据线14形成在所述第一绝缘层130上。所述第二绝缘层140形成在所述第一绝缘层130上并覆盖所述数据线14。所述连接部17形成在所述第二绝缘层140上。一第一通孔143在对应所述引线18的位置贯穿所述第一绝缘层130与第二绝缘层140。所述连接部17的一侧穿过所述第一通孔143从而与所述引线18电性连接。所述第二绝缘层140对应所述数据线14的位置开设有第二通孔144。所述连接部17的另一侧穿过所述第二通孔144与所述数据线14电性连接。由此,所述连接部17将所述数据线14与引线18电性导通。
在本实施方式中,由于所述第一引线181的长度大于所述第二引线182的长度,所述驱动信号从所述驱动器16传递至所述第一数据线141时的阻抗要高于传递至所述第二数据线142时的阻抗。请参阅图5,本发明通过增加所述第一引线181与第一数据线141连接处的所述第一通孔143、第二通孔144的孔径,从而增加所述第一引线181与所述第一连接部171的接触面积以及所述第一数据线141与所述第一连接部171的接触面积,从而减小所述驱动信号从所述驱动器16传递至所述第一数据线141时的阻抗,使所述第一数据线141与第二数据线142的阻抗趋于均衡,进而实现均衡的显示效果。
图6为本发明第二实施方式中第二连接部172的俯视图。图7为本发明第二实施方式中第一连接部171的俯视图。在本发明第二实施方式中,所述第一引线181与第一数据线141连接处的第一通孔143、第二通孔144的数量均为3个,且所述第二引线182与第二数据线142连接处的第一通孔143、第二通孔144的数量均为3个。在本实施方式中,同样是通过增加所述第一引线181与第一数据线141连接处的每一所述第一通孔143、第二通孔144的孔径,从而增加所述第一引线181与所述第一连接部171的接触面积以及所述第一数据线141与所述第一连接部171的接触面积,从而减小所述驱动信号从所述驱动器16传递至所述第一数据线141时的阻抗,使所述第一数据线141与第二数据线142的阻抗趋于均衡,进而实现均衡的显示效果。
以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或等同替换,而不脱离本发明技术方案的精神和范围。
Claims (10)
1.一种阵列基板,所述阵列基板包括多个薄膜晶体管、多条功能线、多条引线、多个连接部以及驱动器,所述驱动器用于为所述功能线提供驱动信号,所述功能线用于将所述驱动信号传递至所述薄膜晶体管,所述引线与所述驱动器电性连接,所述功能线与所述引线通过所述连接部电性连接,所述引线包括第一引线与第二引线,所述第一引线的长度大于所述第二引线的长度,所述第一引线与所述连接部的接触面积大于所述第二引线与所述连接部的接触面积。
2.如权利要求1所述的阵列基板,其特征在于,所述功能线包括第一功能线与第二功能线,所述第一功能线通过所述连接部与所述第一引线电性连接,所述第二功能线通过所述连接部与所述第二引线电性连接,所述第一功能线与所述连接部的接触面积大于所述第二功能线与所述连接部的接触面积。
3.如权利要求2所述的阵列基板,其特征在于,所述阵列基板还包括基底、第一绝缘层以及第二绝缘层,所述引线形成在所述基底上,所述第一绝缘层形成在所述基底上并覆盖所述引线,所述功能线形成在所述第一绝缘层上,所述第二绝缘层形成在所述第一绝缘层上并覆盖所述功能线,所述连接部形成在所述第二绝缘层上。
4.如权利要求3所述的阵列基板,其特征在于,至少一第一通孔在对应所述引线的位置贯穿所述第一绝缘层与第二绝缘层,所述第二绝缘层对应所述功能线的位置开设有第二通孔,所述连接部的一侧穿过所述第一通孔与所述引线电性连接,所述连接部的另一侧穿过所述第二通孔与所述功能线电性连接。
5.如权利要求4所述的阵列基板,其特征在于,所述第一引线与所述第一功能线连接处的第一通孔、第二通孔的孔径大于所述第二引线与所述第二功能线连接处的第一通孔、第二通孔的孔径。
6.如权利要求5所述的阵列基板,其特征在于,所述引线的长度越长,所述引线与功能线通过所述连接部所连接的位置的第一通孔、第二通孔的孔径越大。
7.如权利要求4所述的阵列基板,其特征在于,所述第一引线与第一数据线连接处的第一通孔、第二通孔的数量均为3个,且所述第二引线与第二数据线连接处的第一通孔、第二通孔的数量均为3个。
8.如权利要求1所述的阵列基板,其特征在于,所述功能线为数据线。
9.如权利要求1所述的阵列基板,其特征在于,所述驱动器为数据驱动器。
10.一种显示面板,所述显示面板包括如权利要求1至9项中任意一项所述的阵列基板。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510692583.3A CN105259720B (zh) | 2015-10-23 | 2015-10-23 | 阵列基板以及使用该阵列基板的显示面板 |
US14/926,903 US9905581B2 (en) | 2015-10-23 | 2015-10-29 | Array substrate and display panel with same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510692583.3A CN105259720B (zh) | 2015-10-23 | 2015-10-23 | 阵列基板以及使用该阵列基板的显示面板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105259720A true CN105259720A (zh) | 2016-01-20 |
CN105259720B CN105259720B (zh) | 2018-11-27 |
Family
ID=55099470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510692583.3A Active CN105259720B (zh) | 2015-10-23 | 2015-10-23 | 阵列基板以及使用该阵列基板的显示面板 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9905581B2 (zh) |
CN (1) | CN105259720B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105785677A (zh) * | 2016-05-11 | 2016-07-20 | 深圳市华星光电技术有限公司 | 显示装置及其显示面板、显示面板的制造方法 |
CN106200184A (zh) * | 2016-09-29 | 2016-12-07 | 厦门天马微电子有限公司 | 一种显示装置、显示面板、阵列基板及其驱动方法 |
CN111584500A (zh) * | 2020-04-27 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134559A (ja) * | 2000-10-26 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 電子部品の実装方法及び電子部品実装体 |
US20050230773A1 (en) * | 2004-04-16 | 2005-10-20 | Atsushi Saito | Electronic component, mounted structure, electro-optical device, and electronic device |
US20060044505A1 (en) * | 2004-08-27 | 2006-03-02 | Masahiko Nakazawa | Electro-optical device and electronic apparatus |
CN1877404A (zh) * | 2005-06-06 | 2006-12-13 | 阿尔卑斯电气株式会社 | 布线连接结构及液晶显示装置 |
CN101013236A (zh) * | 2007-02-07 | 2007-08-08 | 友达光电股份有限公司 | 黏贴结构及其制造方法 |
CN102084410A (zh) * | 2008-07-28 | 2011-06-01 | 夏普株式会社 | 显示面板以及具备该显示面板的显示装置 |
CN104956429A (zh) * | 2013-01-30 | 2015-09-30 | 夏普株式会社 | 显示装置 |
-
2015
- 2015-10-23 CN CN201510692583.3A patent/CN105259720B/zh active Active
- 2015-10-29 US US14/926,903 patent/US9905581B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134559A (ja) * | 2000-10-26 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 電子部品の実装方法及び電子部品実装体 |
US20050230773A1 (en) * | 2004-04-16 | 2005-10-20 | Atsushi Saito | Electronic component, mounted structure, electro-optical device, and electronic device |
US20060044505A1 (en) * | 2004-08-27 | 2006-03-02 | Masahiko Nakazawa | Electro-optical device and electronic apparatus |
CN1877404A (zh) * | 2005-06-06 | 2006-12-13 | 阿尔卑斯电气株式会社 | 布线连接结构及液晶显示装置 |
CN101013236A (zh) * | 2007-02-07 | 2007-08-08 | 友达光电股份有限公司 | 黏贴结构及其制造方法 |
CN102084410A (zh) * | 2008-07-28 | 2011-06-01 | 夏普株式会社 | 显示面板以及具备该显示面板的显示装置 |
CN104956429A (zh) * | 2013-01-30 | 2015-09-30 | 夏普株式会社 | 显示装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105785677A (zh) * | 2016-05-11 | 2016-07-20 | 深圳市华星光电技术有限公司 | 显示装置及其显示面板、显示面板的制造方法 |
CN105785677B (zh) * | 2016-05-11 | 2019-06-07 | 深圳市华星光电技术有限公司 | 显示装置及其显示面板、显示面板的制造方法 |
CN106200184A (zh) * | 2016-09-29 | 2016-12-07 | 厦门天马微电子有限公司 | 一种显示装置、显示面板、阵列基板及其驱动方法 |
CN106200184B (zh) * | 2016-09-29 | 2023-01-24 | 厦门天马微电子有限公司 | 一种显示装置、显示面板、阵列基板及其驱动方法 |
CN111584500A (zh) * | 2020-04-27 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板 |
Also Published As
Publication number | Publication date |
---|---|
US20170117297A1 (en) | 2017-04-27 |
CN105259720B (zh) | 2018-11-27 |
US9905581B2 (en) | 2018-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9626930B2 (en) | Display device | |
US10048547B2 (en) | Display device | |
US9971218B2 (en) | Display device, display panel, array substrate and driving method thereof | |
CN205353532U (zh) | 阵列基板和显示面板 | |
CN105445969A (zh) | 显示面板 | |
US10263017B2 (en) | Pixel structure, display panel and manufacturing method of pixel structure | |
CN104360556A (zh) | 一种液晶显示面板及阵列基板 | |
CN105068302A (zh) | 液晶显示面板 | |
US20180145090A1 (en) | Tft substrate and touch display panel using same | |
US12021089B2 (en) | Thin film transistor substrate and display device | |
KR20170097259A (ko) | 표시 장치 및 이의 제조 방법 | |
US20140117347A1 (en) | Thin Film Transistor and Active Matrix Flat Display Device | |
CN105259720A (zh) | 阵列基板以及使用该阵列基板的显示面板 | |
CN104635390B (zh) | 液晶显示装置 | |
CN108445685B (zh) | 显示装置及其形成方法 | |
US9437149B2 (en) | Array substrate and display | |
US20140253854A1 (en) | Liquid crystal display | |
CN208028063U (zh) | 一种感光组件、阵列基板、显示装置 | |
JP2016218130A (ja) | 表示装置 | |
CN105223750A (zh) | 阵列基板及触控显示装置 | |
US20190064573A1 (en) | Liquid crystal mother substrate and vertical alignment curing method thereof | |
CN204679743U (zh) | 显示装置 | |
US10247992B2 (en) | Display device | |
CN104122720B (zh) | 阵列基板以及使用该阵列基板的液晶显示面板 | |
CN104808845A (zh) | 触控显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |