CN105259521A - Giant magneto-resistance sensor differential drive and magnetic field bias circuit and bias method - Google Patents
Giant magneto-resistance sensor differential drive and magnetic field bias circuit and bias method Download PDFInfo
- Publication number
- CN105259521A CN105259521A CN201510839092.7A CN201510839092A CN105259521A CN 105259521 A CN105259521 A CN 105259521A CN 201510839092 A CN201510839092 A CN 201510839092A CN 105259521 A CN105259521 A CN 105259521A
- Authority
- CN
- China
- Prior art keywords
- transport
- sensor
- coil
- placing device
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Magnetic Variables (AREA)
Abstract
The invention discloses a giant magneto-resistance sensor differential drive and magnetic field bias circuit and a bias method. The circuit comprises two operational amplifiers; input power passes through a power reference module and is then inputted to one negative electrode and one positive electrode of the two operational amplifiers respectively to enable the two operational amplifiers to generate stable and amplified positive and negative voltage, and the two operational amplifiers are connected with the positive power end and the negative power end of the giant magneto-resistance sensor respectively to serve as drive voltage of a giant magneto-resistance chip; and output of one operational amplifier passes through a diode, an adjustable resistor and a decoupling capacitor at the same time to be connected to one end of a coil, and the other end of the coil is grounded. Through adjusting the adjustable resistor, current passing through the coil is changed, and a changeable bias magnetic field is thus generated.
Description
Technical field
The present invention relates to a kind of sensor-driven approach and circuit, be specifically related to a kind of giant magnetoresistance sensor differential driving and magnetic field bias circuit and biasing means, this giant magnetoresistance sensor differential driving and magnetic field bias circuit and biasing means provide stable differential power, simultaneously for the output of sensor provides extra amplification for sensor; Applied bias magnetic field can adjust the working point of sensor, thus makes sensor can export ambipolar signal.Belong to sensor technical field.
background technology:
Giant magnetoresistance effect magnetic field sensor due to volume little, highly sensitive, easy for installation, three axle vertical precisions are high, detect with it, in restriction of having living space, have the detection of magnetic field field pointed to and require, giant magnetoresistance effect magnetic field sensor is a kind of well selection.So-called giant magnetoresistance effect refers to that faint magnetic field can make the resistance value generation significant change of some material, is a kind of phenomenon of resistivity along with material magnetization state generation marked change of material.Giant magnetoresistance sensor chip is the Wheatstone bridge configuration formed with the magnetoresistance of four similar resistance, wherein two additional screen layers of resistance.Under the effect of external drive voltage, meeting generation current in electric bridge, during without externally-applied magnetic field, output voltage is 0, during externally-applied magnetic field, unscreened two resistances change, thus output voltage is produced in electric bridge, this voltage is directly proportional to magnetoresistance variable quantity, therefore indirectly relevant to the change of external magnetic field, by detecting this change in voltage, changes of magnetic field can be obtained.
But existing giant magnetoresistance effect magnetic field sensor, Magnetic Sensor is often magnetized by external magnetic field, simultaneously, signal detected by sensor can affect by the environmental parameter of strong external magnetic field, easily cause transmitted distorted signals, this accuracy detected by extreme influence, is therefore badly in need of being improved this.
Do not find that there is the patent literature constructed with the present invention by patent retrieval, to have the patent of certain relation to mainly contain following with the present invention:
1, the patent No. is CN200610154445, and the patent of invention that name is called " eddy current testing device based on giant magnetoresistance sensor ", which discloses a kind of eddy current testing device based on giant magnetoresistance sensor detection probe.This device adopts the integrated circuit based on Direct Digital to obtain the sinusoidal signal of frequency-adjustable, for drive coil provides pumping signal.According to electromagnetic induction principle, when drive coil is near tested conductive structure, in measured piece, eddy current can be produced; Eddy current affects again the magnetic field that drive coil produces conversely.Detection probe based on giant magnetoresistance sensor detects the change in magnetic field, and this magnetic field variation signal point two-way after differential amplify sends into phase-sensitive detector (PSD).The output signal of phase-sensitive detector (PSD) and certain or some parameters to be detected of measured piece have substantial connection, by analysis or Inversion Calculation, can infer the situation or numerical value that parameter to be measured.
2, the patent No. is CN01202985, name is called the utility model patent of " giant magnetoresistance sensor ", which discloses a kind of sensor for current measurement, and it adopts this stool bridge architecture of favour, four-arm resistance is the multilayer film resistance of spin valve structure, and this resistance can produce giant magnetoresistance effect.Have soft magnetic material around the multilayer film resistance of the relative two-arm in described giant magnetoresistance sensor, magnetic field is insensitive to external world to make the resistance of conductively-closed, and has again magnetic flux converging action to other two-arm resistance.
3, the patent No. is CN200710098557, name is called the patent of invention of " a kind of sensor based on giant magnetoresistance ", which disclose a kind of sensor based on giant magnetoresistance, comprise giant magnetoresistance element, piezoelectric element, with the microcantilever beam of magnetisable material, the extraction electrode of giant magnetoresistance element and introducing electrode, the extraction electrode of piezoelectric element and introducing electrode.Microcantilever beam is fixing on the piezoelectric element, is suspended in above giant magnetoresistance element.The upper surface of piezoelectric element is higher than the upper surface of giant magnetoresistance element.The introducing electrode of giant magnetoresistance element is connected giant magnetoresistance element respectively with extraction electrode, and the introducing electrode of piezoelectric element is connected piezoelectric element respectively with extraction electrode.The change of microcantilever beam natural frequency, is reflected in the change in resistance of giant magnetoresistance element, can obtains the knots modification of required measuring amount thus.
So although these patents above-mentioned all relate to sensor and the application thereof of giant magnetoresistance, and all giant magnetoresistance sensor or the method that utilizes giant magnetoresistance sensor to detect are improved, but all not to how improving giant magnetoresistance sensor under the environment of high-intensity magnetic field, still accurate detection perform can be kept to suggest improvements, therefore under stronger magnetic field, giant magnetoresistance sensor is often magnetized by external magnetic field, and the problem affecting accuracy of detection still exists, simultaneously, signal detected by sensor can by the impact of the environmental parameters such as external temperature, the signal that Magnetic Sensor transmits is easy to occur distortion, still need to be improved further.
Summary of the invention
The object of the invention is to for the problem existing for existing giant magnetoresistance sensor, a kind of giant magnetoresistance sensor driving circuit and driving method are provided, this driving circuit and driving method can be giant magnetoresistance sensor and provide stable differential power, simultaneously for the output of sensor provides extra amplification; Applied bias magnetic field can adjust the working point of sensor, thus makes sensor can export ambipolar signal.
In order to reach this purpose, the invention provides a kind of giant magnetoresistance sensor differential driving and magnetic field bias circuit, comprise two transport and placing devices, input power is input to a negative pole and a positive pole of two transport and placing devices respectively after power source reference module, two transport and placing devices are made to produce the stable generating positive and negative voltage amplified, two transport and placing devices are connected with giant magnetoresistance sensor positive power source terminal and negative power end respectively, as the driving voltage of giant magnetoresistance chip; One of them transport and placing device exports and is connected to coil one end through diode, adjustable resistance and decoupling capacitor, coil other end ground connection simultaneously, changes the electric current by coil, thus produce transformable bias magnetic field by adjustment adjustable resistance.
Further, two described transport and placing devices are respectively the first transport and placing device U1A and the second transport and placing device U1B, input power produces stable voltage and exports after power source reference module U2, the output of power source reference module U2 is connected on the positive input terminal of the first transport and placing device U1A, through feedback resistance R2, the control of R3 produces required positive voltage, and be connected on the positive power source terminal of giant magnetoresistance sensor P1 and the negative power end of the second transport and placing device U1B simultaneously, second transport and placing device U1B is through feedback resistance R4, the control of R5 produces required negative voltage, and be connected on the original place end of giant magnetoresistance sensor, the output of the first transport and placing device U1A is simultaneously connected to diode D1, the output of D1, is connected to the input end of coil, coil output ground connection through adjustable resistance R18, whole coil is around the periphery of sensor.
Further, described power source reference module U2 produces stable voltage and exports as 1-1.5V, and as the positive input of the first transport and placing device U1A, exports by producing 4-5V positive voltage after the first transport and placing device U1A; As the power supply of sensor chip and the negative input of the second transport and placing device U1B, export by producing 4-5V negative voltage after the second transport and placing device U1B, be connected to the ground of sensor chip, sensor power is now the positive and negative 4-5V voltage of both-end.
Further, the output voltage of the first described transport and placing device U1A is added to the input end of diode D1 simultaneously, and in this loop generation current, stop current reflux by diode, prevent from causing disturb sensor loop.By adjusting rheostatic resistance, adjust the electric current by coil, thus change the magnetic field of coil generation, by a sensor additional for the magnetic field produced, the operation interval of adjustment sensor.
A kind of giant magnetoresistance sensor magnetic field bias method, adopt differential power driving sensor, power supply is exported after a high-precision power referrer module, produces stable voltage, and be amplified to required generating positive and negative voltage by two transport and placing devices respectively by producing stable voltage after high-precision power referrer module, and supply the power end of giant magnetoresistance chip and former earth terminal respectively, as the driving voltage of giant magnetoresistance chip; One of them transport and placing device exports and is connected to coil one end through diode, adjustable resistance and decoupling capacitor, coil other end ground connection simultaneously, changes the electric current by coil, thus produce transformable bias magnetic field by adjustment adjustable resistance.
Further, described input power produces stable voltage and exports after power source reference module U2, the output of power source reference module U2 is connected on the positive input terminal of the first transport and placing device U1A, through feedback resistance R2, the control of R3 produces required positive voltage, and is connected on the positive power source terminal of giant magnetoresistance sensor P1 and the negative power end of the second transport and placing device U1B simultaneously, and the second transport and placing device U1B is through feedback resistance R4, the control of R5 produces required negative voltage, and is connected on the original place end of giant magnetoresistance sensor; The output of the first transport and placing device U1A is simultaneously connected to diode D1, the output of D1, is connected to the input end of coil, coil output ground connection through adjustable resistance R18; Whole coil is around the periphery of sensor.
Further, described power source reference module U2 produces stable voltage and exports as 1-1.5V, and as the positive input of the first transport and placing device U1A, exports by producing 4-5V positive voltage after the first transport and placing device U1A; As the power supply of sensor chip and the negative input of the second transport and placing device U1B, export by producing 4-5V negative voltage after the second transport and placing device U1B, be connected to the ground of sensor chip, sensor power is now the positive and negative 4-5V voltage of both-end.
Further, the output voltage of the first described transport and placing device U1A is added to the input end of diode D1 simultaneously, and in this loop generation current, stop current reflux by diode, prevent from causing disturb sensor loop.By adjusting rheostatic resistance, adjust the electric current by coil, thus change the magnetic field of coil generation, by a sensor additional for the magnetic field produced, the operation interval of adjustment sensor.
Beneficial effect of the present invention is:
(1) the present invention uses differential power driving sensor, compare original single ended power supply, the voltage at sensor two ends increases close to one times, according to the principle of giant magnetoresistance sensor, the output voltage change that now same changes of magnetic field causes is twice time single-ended in theory, namely now has larger enlargement factor.
(2) differential voltage source compared traditional use single supply or produced by two independent power supplys, the present invention uses an independent source of stable pressure to generate a pair differential voltage source, it is advantageous that: two differential voltage source can keep stable coupling, also reduce the complexity of system simultaneously.
(3) from differential voltage source, draw the driving power of coil, and use diode to isolate, the advantage comparing the independent power drives coil of traditional use is: this design can save a block power supply module, thus reduces the complexity of system; Use coil to produce bias magnetic field, and use adjustable resistance control by the electric current of coil, the large I of bias magnetic field is controlled arbitrarily according to demand, thus the working point of Magnetic Sensor all can be rationally set in varying strength magnetic field.
Accompanying drawing explanation
Fig. 1 is electrical block diagram of the present invention;
Fig. 2 is the additional coiler part structural representation of the present invention.
Embodiment
The present invention is set forth further below in conjunction with the drawings and specific embodiments.
Embodiment one
As shown in fig. 1: a kind of giant magnetoresistance sensor differential driving and magnetic field bias circuit, comprise two transport and placing devices, input power is input to a negative pole and a positive pole of two transport and placing devices respectively after power source reference module, two transport and placing devices are made to produce the stable generating positive and negative voltage amplified, two transport and placing devices are connected with giant magnetoresistance sensor positive power source terminal and negative power end respectively, as the driving voltage of giant magnetoresistance chip; One of them transport and placing device exports and is connected to coil one end through diode, adjustable resistance and decoupling capacitor, coil other end ground connection simultaneously, changes the electric current by coil, thus produce transformable bias magnetic field by adjustment adjustable resistance.
Two described transport and placing devices are respectively the first transport and placing device U1A and the second transport and placing device U1B, input power produces stable voltage and exports after power source reference module U2, the output of power source reference module U2 is connected on the positive input terminal of the first transport and placing device U1A, through feedback resistance R2, the control of R3 produces required positive voltage, and be connected on the positive power source terminal of giant magnetoresistance sensor P1 and the negative power end of the second transport and placing device U1B simultaneously, second transport and placing device U1B is through feedback resistance R4, the control of R5 produces required negative voltage, and is connected on the original place end of giant magnetoresistance sensor; The output of the first transport and placing device U1A is simultaneously connected to diode D1, the output of D1, is connected to the input end of coil, coil output ground connection through adjustable resistance R18; Whole coil 1 is around on the sleeve 3 of the periphery of sensor 2, and the wiring board 4 of sensor is arranged in sleeve 3 together with sensor 2, as shown in Figure 2.
Described power source reference module U2 produces stable voltage and exports as 1-1.5V, and as the positive input of the first transport and placing device U1A, exports by producing 4-5V positive voltage after the first transport and placing device U1A; As the power supply of sensor chip and the negative input of the second transport and placing device U1B, export by producing 4-5V negative voltage after the second transport and placing device U1B, be connected to the ground of sensor chip, sensor power is now the positive and negative 4-5V voltage of both-end.
The output voltage of the first described transport and placing device U1A is added to the input end of diode D1 simultaneously, and in this loop generation current, stop current reflux by diode, prevent from causing disturb sensor loop.By adjusting rheostatic resistance, adjust the electric current by coil, thus change the magnetic field of coil generation, by a sensor additional for the magnetic field produced, the operation interval of adjustment sensor.
During work, power source reference module U2 produces stable 1.235V and exports, and as the positive input of amplifier U1A, by producing+4.5V voltage after U1A, as the power supply of sensor chip and the negative input of amplifier U1B, by producing the output of-4.5V after U1B, be connected to the ground of sensor chip, sensor power is now both-end ± 4.5V, compare single-ended+5V in former reference circuit to power and add close to one times, compare former reference circuit by the known enlargement factor now of the principle of Wheatstone bridge and too increase one times nearly.
The output voltage of U1A is added to the input end of diode D1 simultaneously, and in this loop generation current, the effect of diode stops current reflux to cause disturb sensor loop.By adjusting rheostatic resistance, just can adjust the electric current by coil, thus change the magnetic field of coil generation, this magnetic field is on a sensor additional, just can adjust the operation interval of sensor.
The above-described embodiment and examples are only the preferred embodiments of the present invention; those of ordinary skill in the art are not departing from the distortion and retouching done under essence of the present invention and technology enlightenment; all should be considered as within protection scope of the present invention, protection scope of the present invention is depending on its claims.
Can be found out by embodiment, the present invention relates to a kind of giant magnetoresistance sensor magnetic field bias method, adopt differential power driving sensor, power supply is exported after a high-precision power referrer module, produces stable voltage, and be amplified to required generating positive and negative voltage by two transport and placing devices respectively by producing stable voltage after high-precision power referrer module, and supply the power end of giant magnetoresistance chip and former earth terminal respectively, as the driving voltage of giant magnetoresistance chip; One of them transport and placing device exports and is connected to coil one end through diode, adjustable resistance and decoupling capacitor, coil other end ground connection simultaneously, changes the electric current by coil, thus produce transformable bias magnetic field by adjustment adjustable resistance.
Further, described input power produces stable voltage and exports after power source reference module U2, the output of power source reference module U2 is connected on the positive input terminal of the first transport and placing device U1A, through feedback resistance R2, the control of R3 produces required positive voltage, and is connected on the positive power source terminal of giant magnetoresistance sensor P1 and the negative power end of the second transport and placing device U1B simultaneously, and the second transport and placing device U1B is through feedback resistance R4, the control of R5 produces required negative voltage, and is connected on the original place end of giant magnetoresistance sensor; The output of the first transport and placing device U1A is simultaneously connected to diode D1, the output of D1, is connected to the input end of coil, coil output ground connection through adjustable resistance R18; Whole coil is around the periphery of sensor.
Further, described power source reference module U2 produces stable voltage and exports as 1-1.5V, and as the positive input of the first transport and placing device U1A, exports by producing 4-5V positive voltage after the first transport and placing device U1A; As the power supply of sensor chip and the negative input of the second transport and placing device U1B, export by producing 4-5V negative voltage after the second transport and placing device U1B, be connected to the ground of sensor chip, sensor power is now the positive and negative 4-5V voltage of both-end.
Further, the output voltage of the first described transport and placing device U1A is added to the input end of diode D1 simultaneously, and in this loop generation current, stop current reflux by diode, prevent from causing disturb sensor loop.By adjusting rheostatic resistance, adjust the electric current by coil, thus change the magnetic field of coil generation, by a sensor additional for the magnetic field produced, the operation interval of adjustment sensor.
Beneficial effect of the present invention is:
(1) the present invention uses differential power driving sensor, compare original single ended power supply, the voltage at sensor two ends increases close to one times, according to the principle of giant magnetoresistance sensor, the output voltage change that now same changes of magnetic field causes is twice time single-ended in theory, namely now has larger enlargement factor.
(2) differential voltage source compared traditional use single supply or produced by two independent power supplys, the present invention uses an independent source of stable pressure to generate a pair differential voltage source, it is advantageous that: two differential voltage source can keep stable coupling, also reduce the complexity of system simultaneously.
(3) from differential voltage source, draw the driving power of coil, and use diode to isolate, the advantage comparing the independent power drives coil of traditional use is: this design can save a block power supply module, thus reduces the complexity of system; Use coil to produce bias magnetic field, and use adjustable resistance control by the electric current of coil, the large I of bias magnetic field is controlled arbitrarily according to demand, thus the working point of Magnetic Sensor all can be rationally set in varying strength magnetic field.
Claims (8)
1. a giant magnetoresistance sensor differential driving and magnetic field bias circuit, it is characterized in that: comprise two transport and placing devices, input power is input to a negative pole and a positive pole of two transport and placing devices respectively after power source reference module, two transport and placing devices are made to produce the stable generating positive and negative voltage amplified, two transport and placing devices are connected with giant magnetoresistance sensor positive power source terminal and negative power end respectively, as the driving voltage of giant magnetoresistance chip; One of them transport and placing device exports and is connected to coil one end through diode, adjustable resistance and decoupling capacitor, coil other end ground connection simultaneously, changes the electric current by coil, thus produce transformable bias magnetic field by adjustment adjustable resistance.
2. giant magnetoresistance sensor differential driving as claimed in claim 1 and magnetic field bias circuit, it is characterized in that: two described transport and placing devices are respectively the first transport and placing device U1A and the second transport and placing device U1B, input power produces stable voltage and exports after power source reference module U2, the output of power source reference module U2 is connected on the positive input terminal of the first transport and placing device U1A, through feedback resistance R2, the control of R3 produces required positive voltage, and be connected on the positive power source terminal of giant magnetoresistance sensor P1 and the negative power end of the second transport and placing device U1B simultaneously, second transport and placing device U1B is through feedback resistance R4, the control of R5 produces required negative voltage, and be connected on the original place end of giant magnetoresistance sensor, the output of the first transport and placing device U1A is simultaneously connected to diode D1, the output of D1, is connected to the input end of coil, coil output ground connection through adjustable resistance R18, whole coil is around the periphery of sensor.
3. giant magnetoresistance sensor differential driving as claimed in claim 2 and magnetic field bias circuit, it is characterized in that: described power source reference module U2 produces stable voltage and exports as 1-1.5V, and as the positive input of the first transport and placing device U1A, export by producing 4-5V positive voltage after the first transport and placing device U1A; As the power supply of sensor chip and the negative input of the second transport and placing device U1B, export by producing 4-5V negative voltage after the second transport and placing device U1B, be connected to the ground of sensor chip, sensor power is now the positive and negative 4-5V voltage of both-end.
4. giant magnetoresistance sensor differential driving as claimed in claim 3 and magnetic field bias circuit, it is characterized in that: the output voltage of the first described transport and placing device U1A is added to the input end of diode D1 simultaneously, and in this loop generation current, stop current reflux by diode, prevent from causing disturb sensor loop; By adjusting rheostatic resistance, adjust the electric current by coil, thus change the magnetic field of coil generation, by a sensor additional for the magnetic field produced, the operation interval of adjustment sensor.
5. a giant magnetoresistance sensor magnetic field bias method, adopt differential power driving sensor, power supply is exported after a high-precision power referrer module, produces stable voltage, and be amplified to required generating positive and negative voltage by two transport and placing devices respectively by producing stable voltage after high-precision power referrer module, and supply the power end of giant magnetoresistance chip and former earth terminal respectively, as the driving voltage of giant magnetoresistance chip; One of them transport and placing device exports and is connected to coil one end through diode, adjustable resistance and decoupling capacitor, coil other end ground connection simultaneously, changes the electric current by coil, thus produce transformable bias magnetic field by adjustment adjustable resistance.
6. giant magnetoresistance sensor magnetic field bias method as claimed in claim 5, it is characterized in that: described input power produces stable voltage and exports after power source reference module U2, the output of power source reference module U2 is connected on the positive input terminal of the first transport and placing device U1A, through feedback resistance R2, the control of R3 produces required positive voltage, and be connected on the positive power source terminal of giant magnetoresistance sensor P1 and the negative power end of the second transport and placing device U1B simultaneously, second transport and placing device U1B is through feedback resistance R4, the control of R5 produces required negative voltage, and be connected on the original place end of giant magnetoresistance sensor, the output of the first transport and placing device U1A is simultaneously connected to diode D1, the output of D1, is connected to the input end of coil, coil output ground connection through adjustable resistance R18, whole coil is around the periphery of sensor.
7. giant magnetoresistance sensor magnetic field bias method as claimed in claim 6, it is characterized in that: described power source reference module U2 produces stable voltage and exports as 1-1.5V, and as the positive input of the first transport and placing device U1A, export by producing 4-5V positive voltage after the first transport and placing device U1A; As the power supply of sensor chip and the negative input of the second transport and placing device U1B, export by producing 4-5V negative voltage after the second transport and placing device U1B, be connected to the ground of sensor chip, sensor power is now the positive and negative 4-5V voltage of both-end.
8. giant magnetoresistance sensor magnetic field bias method as claimed in claim 7, it is characterized in that: the output voltage of the first described transport and placing device U1A is added to the input end of diode D1 simultaneously, and in this loop generation current, stop current reflux by diode, prevent from causing disturb sensor loop; By adjusting rheostatic resistance, adjust the electric current by coil, thus change the magnetic field of coil generation, by a sensor additional for the magnetic field produced, the operation interval of adjustment sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510839092.7A CN105259521B (en) | 2015-11-27 | 2015-11-27 | Giant magnetoresistance sensor differential driving and magnetic field bias circuit and biasing means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510839092.7A CN105259521B (en) | 2015-11-27 | 2015-11-27 | Giant magnetoresistance sensor differential driving and magnetic field bias circuit and biasing means |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105259521A true CN105259521A (en) | 2016-01-20 |
| CN105259521B CN105259521B (en) | 2018-08-28 |
Family
ID=55099283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510839092.7A Active CN105259521B (en) | 2015-11-27 | 2015-11-27 | Giant magnetoresistance sensor differential driving and magnetic field bias circuit and biasing means |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105259521B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107219425A (en) * | 2017-06-14 | 2017-09-29 | 中北大学 | A kind of metal enclosed internal test instrument triggering device based on giant magnetoresistance magnetic susceptibility |
| CN110333378A (en) * | 2019-05-31 | 2019-10-15 | 国网江西省电力有限公司电力科学研究院 | A kind of magnetoelectricity laminate current sensor device based on magnetic convergence effect |
| CN110907866A (en) * | 2019-12-13 | 2020-03-24 | 中国人民解放军国防科技大学 | Working point real-time optimization system of giant magneto-impedance sensor and giant magneto-impedance sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7394247B1 (en) * | 2007-07-26 | 2008-07-01 | Magic Technologies, Inc. | Magnetic field angle sensor with GMR or MTJ elements |
| GB2446450A (en) * | 2007-02-07 | 2008-08-13 | John Davidson Hunter | Balanced line signal linear amplitude modulator using a magnetic resistance bridge sensor |
| CN101345286A (en) * | 2008-05-09 | 2009-01-14 | 南京航空航天大学 | Method for improving stability of bias field in magnetic multilayer film structure |
| CN101975934A (en) * | 2010-09-27 | 2011-02-16 | 上海交通大学 | Integrated bias coil type giant magneto-impedance effect (GMI) magneto-dependent sensor |
| CN202066953U (en) * | 2011-05-30 | 2011-12-07 | 北京鼎臣超导科技有限公司 | Magnetic sensor |
| CN202083973U (en) * | 2011-05-20 | 2011-12-21 | 北京航空航天大学 | Current biasing circuit used for magnetic sensor |
| CN203310984U (en) * | 2013-05-03 | 2013-11-27 | 中国地震局地球物理研究所 | Bridge type resistor giant magneto-impedance effect magnetic field sensor |
-
2015
- 2015-11-27 CN CN201510839092.7A patent/CN105259521B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2446450A (en) * | 2007-02-07 | 2008-08-13 | John Davidson Hunter | Balanced line signal linear amplitude modulator using a magnetic resistance bridge sensor |
| US7394247B1 (en) * | 2007-07-26 | 2008-07-01 | Magic Technologies, Inc. | Magnetic field angle sensor with GMR or MTJ elements |
| CN101345286A (en) * | 2008-05-09 | 2009-01-14 | 南京航空航天大学 | Method for improving stability of bias field in magnetic multilayer film structure |
| CN101975934A (en) * | 2010-09-27 | 2011-02-16 | 上海交通大学 | Integrated bias coil type giant magneto-impedance effect (GMI) magneto-dependent sensor |
| CN202083973U (en) * | 2011-05-20 | 2011-12-21 | 北京航空航天大学 | Current biasing circuit used for magnetic sensor |
| CN202066953U (en) * | 2011-05-30 | 2011-12-07 | 北京鼎臣超导科技有限公司 | Magnetic sensor |
| CN203310984U (en) * | 2013-05-03 | 2013-11-27 | 中国地震局地球物理研究所 | Bridge type resistor giant magneto-impedance effect magnetic field sensor |
Non-Patent Citations (2)
| Title |
|---|
| 范晓珍 等: "纵向驱动巨磁阻抗效应的研究进展", 《浙江师范大学学报》 * |
| 鲍丙豪 等: "横向偏置场作用的非晶带巨磁阻抗效应理论", 《物理学报》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107219425A (en) * | 2017-06-14 | 2017-09-29 | 中北大学 | A kind of metal enclosed internal test instrument triggering device based on giant magnetoresistance magnetic susceptibility |
| CN107219425B (en) * | 2017-06-14 | 2019-05-17 | 中北大学 | A kind of metal enclosed internal test instrument trigger device based on giant magnetoresistance magnetic susceptibility |
| CN110333378A (en) * | 2019-05-31 | 2019-10-15 | 国网江西省电力有限公司电力科学研究院 | A kind of magnetoelectricity laminate current sensor device based on magnetic convergence effect |
| CN110333378B (en) * | 2019-05-31 | 2021-08-24 | 国网江西省电力有限公司电力科学研究院 | Magnetoelectric laminated material current sensing device based on magnetic convergence effect |
| CN110907866A (en) * | 2019-12-13 | 2020-03-24 | 中国人民解放军国防科技大学 | Working point real-time optimization system of giant magneto-impedance sensor and giant magneto-impedance sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105259521B (en) | 2018-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207908572U (en) | A kind of high-precision, closed loop magneto-resistive current sensor | |
| CN101960319B (en) | Magnetic field sensor with automatic sensitivity adjustment | |
| CN205139229U (en) | Huge magnetoresistive effect current sensor | |
| US10288700B2 (en) | Magnetic sensor for detecting a vertical component of a magnetic field on the surface of a magnetic pattern | |
| CN103616550A (en) | Giant magnetoresistance current sensor | |
| CN103245819B (en) | Magnetic excitation resonant piezoresistive cantilever beam is adopted to measure the method for DC current or DC voltage | |
| CN205210163U (en) | Huge magnetoresistive effect current sensor | |
| CN103901363A (en) | Single-chip Z-axis linear magneto-resistive sensor | |
| CN101788596A (en) | Tunnel junction magneto-resistance effect principle (TMR) current sensors | |
| CN103575960A (en) | Giant magnetoresistance effect current sensor | |
| CN103645369A (en) | Current sensing apparatus | |
| CN109142843A (en) | A kind of portable Intelligent Measure and Control Instrument | |
| CN207020294U (en) | A kind of three-axle magnetic field meter based on magnetoresistive transducer | |
| CN105259521A (en) | Giant magneto-resistance sensor differential drive and magnetic field bias circuit and bias method | |
| CN203630195U (en) | Giant magnetoresistance current sensor | |
| CN111323737B (en) | Impedance sensitive type magnetic sensor and hardware detection circuit thereof | |
| CN211180163U (en) | On-site feedback device on closed-loop core of vertical sensitive magnetic sensor | |
| CN104793151A (en) | Magnetic-field measuring device and method for magnetic components | |
| CN211180162U (en) | Wide-range vertical sensitive magnetic sensor with feedback on closed-loop core | |
| CN202066953U (en) | Magnetic sensor | |
| CN202837524U (en) | Colossal magnetoresistance magnetoresistive sensor based on phase detection | |
| CN103364616B (en) | A kind of feedback-type Magnetic isolation DC current sensor | |
| CN109932670B (en) | Closed-loop TMR magnetic field measuring device based on power-on position | |
| CN102288815A (en) | Temperature compensator for giant magneto-resistance effect current sensor | |
| CN106443805A (en) | Signal detection circuit of magnetic-flux-gate magnetometer, and the magnetic-flux-gate magnetometer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |