CN105245099A - Voltage source circuit - Google Patents
Voltage source circuit Download PDFInfo
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- CN105245099A CN105245099A CN201510619141.6A CN201510619141A CN105245099A CN 105245099 A CN105245099 A CN 105245099A CN 201510619141 A CN201510619141 A CN 201510619141A CN 105245099 A CN105245099 A CN 105245099A
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Abstract
The invention relates to a circuit, in particular to a voltage source circuit. The voltage source circuit comprises a plurality of N-channel depletion-type transistors M1, M2, M3 ... Mn, wherein the N-channel depletion-type transistors M1, M2, M3 ... Mn are sequentially in cascaded connection from bottom to top; a grid of the N-channel depletion-type transistor M1 is grounded; a source of the N-channel depletion-type transistor M1 is an output end and is simultaneously connected with the grid of the N-channel depletion-type transistor M2; a drain of the N-channel depletion-type transistor M1 is connected with the source of the N-channel depletion-type transistor M2 and is simultaneously connected with the grid of the N-channel depletion-type transistor M3; the source of the N-channel depletion-type transistor M2 is connected with the grid of the N-channel depletion-type transistor M3; the drain of the N-channel depletion-type transistor M2 is connected with the source of the N-channel depletion-type transistor M3, and so on; the grid of the N-channel depletion-type transistor M(n-1) is connected with the source of the N-channel depletion-type transistor M(n-2); the source of the N-channel depletion-type transistor M(n-1) is connected with the drain of the N-channel depletion-type transistor M(n-2); the drain of the N-channel depletion-type transistor M(n-1) is connected with the source of the N-channel depletion-type transistor Mn; the grid of the N-channel depletion-type transistor Mn is connected with the source of the N-channel depletion-type transistor M(n-1) and is simultaneously connected with the drain of the N-channel depletion-type transistor M(n-2); and the drain of the N-channel depletion-type transistor Mn is connected with a power supply. According to the voltage source circuit, the application voltage range of the circuit is expanded; and the voltage source circuit is simple in structure and easy to use.
Description
Technical field
The present invention relates to a kind of circuit, be specifically related to a kind of voltage source circuit.
Background technology
In integrated circuit design; particularly in high-voltage applications circuit; the withstand voltage of some module of its inside circuit is limited; in order to head it off; the integrated voltage source circuit of usual meeting produces a low pressure source for internal circuit; like this, when power electric is pressed with wide variation, its internal source voltage can keep relative stability.
Common easy structure voltage source circuit has:
(1) the first is diode-type voltage source circuit, and as shown in Figure 1, this circuit forms by being managed (NPN pipe can substitute by NMOS tube) by resistance (R1), Zener diode (D) and NPN.This circuit utilizes the breakdown characteristics of Zener diode to produce a reference voltage, and the following feature of recycling NPN pipe forms low pressure source (VA); Suppose that the puncture voltage of Zener diode is Vz, so when VCC>Vz, VA can approximate representation be: VA ≈ Vz-Vbe(or ≈ Vz-Vth); When VCC≤Vz, when VA ≈ VCC-Ib × R1-Vbe ≈ VCC-Vbe(Ib is very little, negligible resistance pressure drop) or (≈ VCC-Vth); Wherein Vbe is the be knot forward conduction voltage drop of NPN pipe Q1; Ib is the base current of NPN pipe.
In order to make VCC have wider operating voltage range, preventing larger quiescent dissipation simultaneously, needing to limit the quiescent current consumption on R1, therefore the resistance of R1 is chosen very large, and these needs take very large chip area.In addition, because VA voltage has a pn to tie pressure reduction (or NMOS tube opens threshold value pressure reduction) relative to Vz, therefore, the low pressure applications of this structure is subject to this restriction.
The second is that N raceway groove exhausts junction field tubular type voltage source circuit, as shown in Figure 2, this circuit exhausts technotron with N raceway groove to form low pressure source circuit, it does not need other auxiliary circuit, the direct ground connection of its grid, drain electrode connects power supply, and source electrode exports and is low pressure source output, it utilizes the opening feature of N channel depletion mode transistor, directly can produce voltage source (VB).Suppose that the cut-in voltage of N channel depletion mode transistor is that Vj(is as Vj=-5.2V), so VB can approximate representation be: when VCC>|Vj|, VB ≈ | Vj|; VCC≤| during Vj|, between the source and drain of this transistor, can resistance via be regarded as, VB ≈ VCC.
This voltage source circuit not only eliminates resistance, and as the NPN pipe that follower uses, takies chip little, simultaneously in the operating voltage range that VCC allows, the quiescent current himself consumed can be ignored, and simple structure, quiescent dissipation is extremely low, has higher cost performance.But its shortcoming is: the puncture voltage between grid and drain electrode limits the range of application of VCC.
In integrated circuit technology, can be relatively easy to realize N channel depletion mode transistor, therefore adopt the structure shown in Fig. 2 very simply can realize low pressure source and export.As in accompanying drawing 3, illustrate N raceway groove and exhaust technotron, be i.e. NJFET, this is a kind of structure of N channel depletion mode transistor.N trap, substrate (P-sub) that this NJFET pipe general is low-doped and be made in territory, p type island region Pbase in N trap and formed, N trap and substrate (P-sub) all have very high puncture voltage.But because Pbase(base diffusion layer) doping content is higher, and therefore the puncture voltage (Vzgd) of Pbase and N trap is lower; Because when adopting NJFET to form low pressure source circuit, source electrode is connected to ground, and drain electrode is connected to power supply, puncture voltage (i.e. Vzgd) between the drain and gate of therefore NJFET will determine the range of application of this application structure voltage, so, by the voltage range of this for restriction structure application when Vzgd is lower.
Summary of the invention
Object of the present invention is exactly the defect in order to overcome in background technology, provides a kind of voltage source circuit, and this circuit can make up the deficiencies in the prior art, has widened the applied voltage scope of circuit.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of voltage source circuit, be made up of multiple N channel depletion mode transistor, described multiple N channel depletion mode transistor is expressed as M1, M2, M3 ... Mn, it is characterized in that: described M1, M2, M3 ... Mn is cascade connection successively from the bottom up, the grounded-grid of described M1, its source electrode is output (VB end), this source electrode connects the grid of M2 simultaneously, and the drain electrode of this M1 is connected with the source electrode of M2 and connects the grid of M3 simultaneously; The source electrode of described M2 connects the grid of M3, and its drain electrode connects the source electrode of M3; By that analogy, the grid of described Mn-1 connects the source electrode of Mn-2, and the source electrode of Mn-1 connects the drain electrode of Mn-2, and the drain electrode of Mn-1 connects the source electrode of Mn; The source electrode of the grid connection Mn-1 of described Mn also connects the drain electrode of Mn-2 simultaneously, and the drain electrode of Mn connects power supply (VCC).
Preferred: described N channel depletion mode transistor is a kind of N channel depletion type metal-oxide-semiconductor specifically.
In addition preferably: described N channel depletion mode transistor specifically a kind of N raceway groove exhausts technotron.
The invention has the beneficial effects as follows: circuit structure of the present invention, both remained the characteristic of N channel depletion mode transistor low quiescent current, utilize the mode of cascade to solve the shortcoming of grid drain withstand voltage deficiency simultaneously, widened the applied voltage scope of circuit.This circuit structure is simple and easy to use, does not also need other auxiliary circuit, is applicable to circuit integrated.
Accompanying drawing explanation
Fig. 1, the schematic diagram of existing diode-type voltage source circuit;
Fig. 2, existing N raceway groove exhausts the schematic diagram of junction field tubular type voltage source circuit;
Fig. 3, existing N raceway groove exhausts the structural representation of technotron;
Fig. 4, circuit theory diagrams of the present invention.
Embodiment
Below in conjunction with accompanying drawing and preferred scheme, operation principle of the present invention is described in further detail.
As shown in Figure 4, circuit theory diagrams of the present invention, specifically a kind of voltage source circuit, this circuit is made up of multiple N channel depletion mode transistor, described multiple N channel depletion mode transistor is expressed as M1, M2, M3 ... Mn, indicate n N channel depletion mode transistor, described M1, M2, M3 ... Mn is cascade connection successively from the bottom up, wherein, described M1 represents first N channel depletion mode transistor, described Mn represents last N channel depletion mode transistor, the grounded-grid of described M1, its source electrode is output (VB end), this source electrode connects the grid of M2 simultaneously, the drain electrode of this M1 is connected with the source electrode of M2 and connects the grid of M3 simultaneously, the source electrode of described M2 connects the grid of M3, and its drain electrode connects the source electrode of M3, by that analogy, the grid of described Mn-1 connects the source electrode of Mn-2, and the source electrode of Mn-1 connects the drain electrode of Mn-2, and the drain electrode of Mn-1 connects the source electrode of Mn, the source electrode of the grid connection Mn-1 of described Mn also connects the drain electrode of Mn-2 simultaneously, and the drain electrode of Mn connects power supply (VCC).
Operation principle: suppose that the grid drain breakdown voltage of each N channel depletion mode transistor is Vzgd, the cut-in voltage of each N channel depletion mode transistor is Vj, and so the VCC applied voltage of structure shown in accompanying drawing 4 is the highest can approximate calculation be: Vzgd+|Vj| × (n-1); Voltage range as required can calculate the number needing cascade.
When VCC is lower, the N channel depletion mode transistor of cascade can all conductings, and form low-resistance channel, output voltage is approximately equal to VCC; When VCC voltage is higher, output voltage can maintain | and near Vj|, self quiescent current consumption is extremely low simultaneously.Adopt this cascade circuit structure can widen the voltage range of application of circuit.
The present invention had both remained the characteristic of N channel depletion mode transistor low quiescent current, utilized the mode of cascade to solve the shortcoming of grid drain withstand voltage deficiency simultaneously, had widened the applied voltage scope of circuit.This circuit structure is simple and easy to use, does not also need other auxiliary circuit, is applicable to circuit integrated.
Claims (3)
1. a voltage source circuit, be made up of multiple N channel depletion mode transistor, described multiple N channel depletion mode transistor is expressed as M1, M2, M3 ... Mn, it is characterized in that: described M1, M2, M3 ... Mn is cascade connection successively from the bottom up, the grounded-grid of described M1, its source electrode is output, and this source electrode connects the grid of M2 simultaneously, and the drain electrode of this M1 is connected with the source electrode of M2 and connects the grid of M3 simultaneously; The source electrode of described M2 connects the grid of M3, and its drain electrode connects the source electrode of M3; By that analogy, the grid of described Mn-1 connects the source electrode of Mn-2, and the source electrode of Mn-1 connects the drain electrode of Mn-2, and the drain electrode of Mn-1 connects the source electrode of Mn; The source electrode of the grid connection Mn-1 of described Mn also connects the drain electrode of Mn-2 simultaneously, and the drain electrode of Mn connects power supply.
2. voltage source circuit according to claim 1, is characterized in that: described N channel depletion mode transistor is a kind of N channel depletion type metal-oxide-semiconductor specifically.
3. voltage source circuit according to claim 1, is characterized in that: described N channel depletion mode transistor specifically a kind of N raceway groove exhausts technotron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510619141.6A CN105245099A (en) | 2015-09-25 | 2015-09-25 | Voltage source circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510619141.6A CN105245099A (en) | 2015-09-25 | 2015-09-25 | Voltage source circuit |
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|---|---|
| CN105245099A true CN105245099A (en) | 2016-01-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510619141.6A Pending CN105245099A (en) | 2015-09-25 | 2015-09-25 | Voltage source circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105891734A (en) * | 2016-04-11 | 2016-08-24 | 芯海科技（深圳）股份有限公司 | Ultralow-power consumption power detection circuit |
| CN109088533A (en) * | 2018-09-17 | 2018-12-25 | 苏州芯智瑞微电子有限公司 | One kind have can expand breakdown reverse voltage novel diode topological structure |
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| CN1136730A (en) * | 1995-04-05 | 1996-11-27 | 精工电子工业株式会社 | Reference voltage semiconductor device |
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| US7808308B2 (en) * | 2009-02-17 | 2010-10-05 | United Microelectronics Corp. | Voltage generating apparatus |
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| CN103546049A (en) * | 2012-07-11 | 2014-01-29 | 英飞凌科技德累斯顿有限公司 | Circuit arrangement with a rectifier circuit |
| CN103729012A (en) * | 2014-01-02 | 2014-04-16 | 广州金升阳科技有限公司 | High-voltage-resistant circuit and high-voltage-resistant constant current source circuit |
| CN103792979A (en) * | 2012-11-02 | 2014-05-14 | 上海华虹集成电路有限责任公司 | Serial voltage-stabilizing circuit in radio frequency identification |
| CN104049666A (en) * | 2014-06-17 | 2014-09-17 | 苏州能讯高能半导体有限公司 | Two-end constant current device |
-
2015
- 2015-09-25 CN CN201510619141.6A patent/CN105245099A/en active Pending
Patent Citations (12)
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| CN1136730A (en) * | 1995-04-05 | 1996-11-27 | 精工电子工业株式会社 | Reference voltage semiconductor device |
| CN101315568A (en) * | 2007-05-28 | 2008-12-03 | 株式会社理光 | Reference voltage generator and voltage regulator incorporating same |
| US20080297132A1 (en) * | 2007-05-28 | 2008-12-04 | Hideyuki Aota | Reference voltage generator and voltage regulator incorporating same |
| US7808308B2 (en) * | 2009-02-17 | 2010-10-05 | United Microelectronics Corp. | Voltage generating apparatus |
| CN101847635A (en) * | 2009-03-27 | 2010-09-29 | 立锜科技股份有限公司 | Integrated element of junction transistor and Schottky diode |
| CN101667050A (en) * | 2009-08-14 | 2010-03-10 | 西安龙腾微电子科技发展有限公司 | High-precision voltage reference circuit |
| CN102403963A (en) * | 2010-09-13 | 2012-04-04 | 三菱电机株式会社 | Power amplifier |
| CN103325785A (en) * | 2012-03-22 | 2013-09-25 | 飞兆半导体公司 | Method and apparatus related to a diode device including a JFET portion |
| CN103546049A (en) * | 2012-07-11 | 2014-01-29 | 英飞凌科技德累斯顿有限公司 | Circuit arrangement with a rectifier circuit |
| CN103792979A (en) * | 2012-11-02 | 2014-05-14 | 上海华虹集成电路有限责任公司 | Serial voltage-stabilizing circuit in radio frequency identification |
| CN103729012A (en) * | 2014-01-02 | 2014-04-16 | 广州金升阳科技有限公司 | High-voltage-resistant circuit and high-voltage-resistant constant current source circuit |
| CN104049666A (en) * | 2014-06-17 | 2014-09-17 | 苏州能讯高能半导体有限公司 | Two-end constant current device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105891734A (en) * | 2016-04-11 | 2016-08-24 | 芯海科技（深圳）股份有限公司 | Ultralow-power consumption power detection circuit |
| CN109088533A (en) * | 2018-09-17 | 2018-12-25 | 苏州芯智瑞微电子有限公司 | One kind have can expand breakdown reverse voltage novel diode topological structure |
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Application publication date: 20160113 |