CN105244362A - 一种基于ZnO压电效应的低功耗柔性阻变存储器及其制备方法 - Google Patents
一种基于ZnO压电效应的低功耗柔性阻变存储器及其制备方法 Download PDFInfo
- Publication number
- CN105244362A CN105244362A CN201510687944.5A CN201510687944A CN105244362A CN 105244362 A CN105244362 A CN 105244362A CN 201510687944 A CN201510687944 A CN 201510687944A CN 105244362 A CN105244362 A CN 105244362A
- Authority
- CN
- China
- Prior art keywords
- zno
- power consumption
- piezoelectric effect
- ito
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000006870 function Effects 0.000 abstract description 5
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 11
- 239000010949 copper Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510687944.5A CN105244362B (zh) | 2015-10-21 | 2015-10-21 | 一种基于ZnO压电效应的低功耗柔性阻变存储器及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510687944.5A CN105244362B (zh) | 2015-10-21 | 2015-10-21 | 一种基于ZnO压电效应的低功耗柔性阻变存储器及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105244362A true CN105244362A (zh) | 2016-01-13 |
CN105244362B CN105244362B (zh) | 2018-05-04 |
Family
ID=55041934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510687944.5A Active CN105244362B (zh) | 2015-10-21 | 2015-10-21 | 一种基于ZnO压电效应的低功耗柔性阻变存储器及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105244362B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105932155A (zh) * | 2016-06-07 | 2016-09-07 | 西安交通大学 | 一种柔性透明的薄膜型电阻开关及制备方法 |
CN108933194A (zh) * | 2017-05-24 | 2018-12-04 | 中国科学院物理研究所 | 一种基于肖特基结调制的忆阻器及其制备方法 |
CN111968688A (zh) * | 2019-05-19 | 2020-11-20 | 天津理工大学 | 一种基于压电传感器—忆阻器的智能数据存储*** |
CN112366273A (zh) * | 2020-11-11 | 2021-02-12 | 赣州优膜科技有限公司 | 一种柔性衬底上具有线性可调压电特性的ZnO薄膜电激发器制备方法 |
CN112397646A (zh) * | 2019-08-30 | 2021-02-23 | 华中科技大学 | 三端超晶格存算一体器的阈值电压调节方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102136487A (zh) * | 2010-12-31 | 2011-07-27 | 中国科学院上海硅酸盐研究所 | 一种基于氧化锌材料的电阻式ram存储单元及制备方法 |
-
2015
- 2015-10-21 CN CN201510687944.5A patent/CN105244362B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102136487A (zh) * | 2010-12-31 | 2011-07-27 | 中国科学院上海硅酸盐研究所 | 一种基于氧化锌材料的电阻式ram存储单元及制备方法 |
Non-Patent Citations (3)
Title |
---|
KEUN YOUNG LEE ET AL: "Transparent flexible stretchable piezoelectric and triboelectric nanogenerators for powering portable electronics", 《NANO ENERGY》 * |
YONG HAN ET AL: "Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass", 《MICROELECTRONIC ENGINEERING》 * |
李红霞等: "下电极对ZnO薄膜电阻开关特性的影响", 《物理学报》 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105932155A (zh) * | 2016-06-07 | 2016-09-07 | 西安交通大学 | 一种柔性透明的薄膜型电阻开关及制备方法 |
CN108933194A (zh) * | 2017-05-24 | 2018-12-04 | 中国科学院物理研究所 | 一种基于肖特基结调制的忆阻器及其制备方法 |
CN111968688A (zh) * | 2019-05-19 | 2020-11-20 | 天津理工大学 | 一种基于压电传感器—忆阻器的智能数据存储*** |
CN111968688B (zh) * | 2019-05-19 | 2022-06-17 | 天津理工大学 | 一种基于压电传感器—忆阻器的智能数据存储*** |
CN112397646A (zh) * | 2019-08-30 | 2021-02-23 | 华中科技大学 | 三端超晶格存算一体器的阈值电压调节方法 |
CN112397646B (zh) * | 2019-08-30 | 2022-08-12 | 华中科技大学 | 三端超晶格存算一体器的阈值电压调节方法 |
CN112366273A (zh) * | 2020-11-11 | 2021-02-12 | 赣州优膜科技有限公司 | 一种柔性衬底上具有线性可调压电特性的ZnO薄膜电激发器制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105244362B (zh) | 2018-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105244362A (zh) | 一种基于ZnO压电效应的低功耗柔性阻变存储器及其制备方法 | |
Nikam et al. | Controlled ionic tunneling in lithium nanoionic synaptic transistor through atomically thin graphene layer for neuromorphic computing | |
Chen et al. | Electroforming-free, flexible, and reliable resistive random-access memory based on an ultrathin TaO x film | |
CN104051545B (zh) | 基于pn异质结构的忆阻器及其制备方法 | |
CN108807546A (zh) | 氧化物薄膜晶体管及其制造方法 | |
CN108847443B (zh) | 一种互补型阻变存储器及其制备方法 | |
CN105185901A (zh) | 一种基于二硫化钼的复合阻变存储器件及其制备方法 | |
CN109638153A (zh) | 一种选通管材料、选通管器件及其制备方法 | |
Wang et al. | Conducting-interlayer SiO x memory devices on rigid and flexible substrates | |
CN105206744A (zh) | 一种双层薄膜结构的柔性阻变存储器及其制备方法 | |
CN104617099A (zh) | 有机铁电栅石墨烯柔性存储器件及其制造方法 | |
CN107895757A (zh) | 一种量子电导特性可控的纳米点接触 | |
CN102005536A (zh) | 一种改进的NiO基电阻式随机存储器及其制备方法 | |
Jin et al. | Ferroelectrically modulated ion dynamics in Li+ electrolyte-gated transistors for neuromorphic computing | |
CN105185904B (zh) | 一种多阻态双层薄膜结构阻变储存器及其制备方法 | |
Zhang et al. | Synaptic transistor arrays based on PVA/lignin composite electrolyte films | |
CN101174673A (zh) | 一种双层复合薄膜非挥发存储器件及其制备方法 | |
Liu et al. | Memristive properties of transparent $({\rm La},\,{\rm Sr}){\rm MnO} _ {3} $ thin films deposited on ITO glass at room temperature | |
CN102931347A (zh) | 一种阻变存储器及其制备方法 | |
CN102280578A (zh) | 基于非晶多元金属氧化物的柔性电阻式非易失性存储器 | |
CN111326651A (zh) | 一种ots材料、选通器单元及其制备方法 | |
CN106374040B (zh) | 一种多层阻变存储器单元及其制备方法 | |
CN112436010B (zh) | 一种基于二维材料的柔性存储器 | |
CN103915565A (zh) | 一种多级阻变存储器单元及其制备方法 | |
US10224481B2 (en) | Mechanical forming of resistive memory devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201110 Address after: 310016 room 3003-1, building 1, Gaode land center, Jianggan District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Zhiduo Network Technology Co.,Ltd. Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park No. 2 street Patentee before: HANGZHOU DIANZI University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201202 Address after: Room 806, building 5, Wuhu navigation Innovation Park, Wanbi Town, Wanbi District, Wuhu City, Anhui Province Patentee after: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Address before: 310016 room 3003-1, building 1, Gaode land center, Jianggan District, Hangzhou City, Zhejiang Province Patentee before: Zhejiang Zhiduo Network Technology Co.,Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160113 Assignee: Hangzhou Elice Chemical Co.,Ltd. Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000464 Denomination of invention: A low power consumption flexible resistive memory based on ZnO Piezoelectric Effect and its preparation method Granted publication date: 20180504 License type: Common License Record date: 20211018 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160113 Assignee: Hangzhou Qihu Information Technology Co.,Ltd. Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000547 Denomination of invention: A low power consumption flexible resistive memory based on ZnO Piezoelectric Effect and its preparation method Granted publication date: 20180504 License type: Common License Record date: 20211028 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160113 Assignee: Hangzhou Julu enterprise management consulting partnership (L.P.) Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000726 Denomination of invention: A low power consumption flexible resistive memory based on ZnO Piezoelectric Effect and its preparation method Granted publication date: 20180504 License type: Common License Record date: 20211109 |
|
EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Hangzhou Qihu Information Technology Co.,Ltd. Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000547 Date of cancellation: 20221103 Assignee: Hangzhou Julu enterprise management consulting partnership (L.P.) Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000726 Date of cancellation: 20221103 |
|
EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Hangzhou Elice Chemical Co.,Ltd. Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000464 Date of cancellation: 20240429 |