CN105226154B - A kind of LED chip structure and manufacturing method - Google Patents
A kind of LED chip structure and manufacturing method Download PDFInfo
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- CN105226154B CN105226154B CN201510710379.XA CN201510710379A CN105226154B CN 105226154 B CN105226154 B CN 105226154B CN 201510710379 A CN201510710379 A CN 201510710379A CN 105226154 B CN105226154 B CN 105226154B
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- 239000002184 metal Substances 0.000 claims description 61
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 23
- 239000011796 hollow space material Substances 0.000 claims description 14
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a kind of LED chip structure and manufacturing method, in the chip, one or more regional groove structures removed are respectively arranged below in Pad and/or finger, the groove structure extended to after crossing over the second semiconductor layer and mqw layer upwards from the second semiconductor layer bottom the first semiconductor layer by layer in, side and/or groove bottom in the groove structure are equipped with insulating layer.On the one hand the invention can reduce part carrier square recombination luminescence under the electrodes, on the other hand can prevent from drawing split or cutting process in chip short circuit and/or extinction caused by by-product sputtering.
Description
Technical field
The invention belongs to the design of semiconductor optoelectronic component structure and manufacturing technology field, and in particular to a kind of high brightness
Light-emitting diode chip for backlight unit structure and manufacturing method.
Background technique
Light emitting diode (Light-Emitting Diode, abbreviation LED) is a kind of to convert electrical energy into the half of luminous energy
Conducting electrons element, wherein LED chip is the core component of light emitting diode.LED chip there are two chief component,
First is that P-type semiconductor, hole is occupied an leading position, second is that N-type semiconductor, electronics is occupied an leading position.Both semiconductors connect
When coming, one P-N junction of formation between them, when forward current acts on LED chip by conducting wire, electrons are pushed to
The area P, electronics issues energy with hole-recombination in the form of photon in the area P, and here it is the principles that LED shines.
In existing LED core chip technology, there are current path and out light to stop to contact base part, that is, avoid
Light is shielded at shading and absorbs, and the common practice is that side adds insulating layer (such as SiO under the electrodes2) or formation schottky junctions
Touch (Schottky contact), but this method still have small part carrier can square recombination luminescence under the electrodes, that is, waste this part
Input carrier.
In addition, directly being cut through during traditional handicraft draw to LED chip and splits (laser dicing) or cut
Metal covering (Al, Au, Ag etc.) or extinction material (Si, GaAs substrate etc.), so that by-product that is conductive and/or inhaling optical activity
Object (bi-product) is easy to splash front and/or side wall attached or even that edge down is to chip, in the protection of no absolute intensity and thickness
In the presence of layer, chip short circuit even " extinction " will be made.Being somebody's turn to do " extinction " is because the surface-product is in burned black shape, reflectivity
It is extremely low, the phenomenon that causing out light energy to be absorbed, and then lose light efficiency.
Summary of the invention
The invention is to solve the problems of the prior art, provides a kind of LED chip structure and manufacturing method, a side
Face can reduce part carrier square recombination luminescence under the electrodes, on the other hand can prevent from drawing split or cutting process in by-product
The short circuit of chip caused by sputtering and/or extinction.
The LED chip that the invention provides has the following structure, in the chip, in gasket (Pad) and/or contact
(finger) be respectively arranged below with one or more regional groove structures removed, the groove structure is from the second semiconductor
Layer bottom crossed over after the second semiconductor layer and multiple quantum wells (MQW) layer upwards extend to the first semiconductor layer by layer in, it is described
Side and/or groove bottom in groove structure are equipped with insulating layer.
Preferably, the Pad and/or finger is respectively arranged below with a groove structure, the slot of the groove structure
Base area is equal to or more than and the area of plane shared by corresponding Pad and/or finger on its vertical position.
Wherein, the section of the groove structure can be rectangle, preferably be in up-narrow and down-wide isosceles trapezoid, described trapezoidal interior
The angle of acute angle is preferably greater than 45 °.
Further, in the side in the groove structure and/or groove bottom, have insulating layer then on the insulating layer also
Equipped with the coat of metal being connected with metal layer adjacent below second semiconductor layer, from the coat of metal both ends
Cohesive position to a hollow space is formed inside groove structure, be below the hollow space and the metal layer below it is adjacent
Conventional arrangement of functional layer, such as adhesive layer, the adhesive layer are preferably metal adhesion layer.
Further, the functional layer connects and substrate directly or by other several conventional arrangement of structure function interlayers
(Substrate) it connects.
As a preferred option, the metal layer and coat of metal are made by same material；The metal layer or metal
Protective layer can be metal mirror layer, or metal adhesion layer.
As a preferred option, the functional layer is made with the metal layer by same material.
As a preferred option, when LED chip is using LED structure (Horizontal-type n-side on the side of the horizontal pole n
Up LED structure) when, can be filled adhesives in the hollow space, the adhesives preferably can with as function
The adhesive layer integrally connected and composition material of layer are identical.
Wherein, first semiconductor layer and the second semiconductor layer are each independently n-type semiconductor layer and p-type semiconductor
One of layer, and the two is not n-type semiconductor layer or p-type semiconductor layer simultaneously.Constitute the first semiconductor layer and the second semiconductor layer
Material can be common semiconductor material, including but not limited to the quaternary semiconductors material such as InGaN ternary or GaAsInP.
Wherein, the groove structure inner insulating layer with a thickness of 0.1-1 μm, preferably 0.1 μm or its multiple；Insulating layer
Material can be SiOx, SiNx, TiO2,AlxOy,MgF2Contour penetrance fluorine/nitrogen/oxide, preferably have both low-refraction and
Material of high thermal conductivity MgF2。
Wherein, in the groove structure coat of metal with a thickness of 0.2-1 μm, preferably 0.5 μm；Coat of metal
Material can be Ag, the metal or alloy for LED light source tool high reflectance characteristic such as Al, Au, preferably metal Ag.
For the purpose of cutting, on the epitaxial wafer in LED chip manufacturing process, below epitaxial wafer Cutting Road, prolongs and cut
It cuts on direction, a regional shifting can be set independently of above-mentioned LED chip structure or with above-mentioned LED chip structure and with depositing
The groove structure removed, the groove structure cross over the second semiconductor layer and multiple quantum wells from the second semiconductor layer bottom upwards
(MQW) extended to after layer the first semiconductor layer by layer in, side and/or groove bottom in the groove structure are equipped with insulation
Layer.
Wherein, the section of the groove structure can be rectangle, and preferably arbitrary groove structure can also be in up-narrow and down-wide
The angle of isosceles trapezoid, the trapezoidal interior acute angle is preferably greater than 45 °.
Further, in the side in the groove structure and/or groove bottom, have insulating layer then on the insulating layer also
Equipped with the coat of metal being connected with metal layer adjacent below second semiconductor layer, from the coat of metal both ends
Cohesive position to a hollow space is formed inside groove structure, be below the hollow space and the metal layer below it is adjacent
Conventional arrangement of functional layer, such as adhesive layer, the adhesive layer are preferably metal adhesion layer.
Further, the functional layer connects and substrate directly or by other several conventional arrangement of structure function interlayers
(Substrate) it connects.
As a preferred option, the metal layer and coat of metal are made by same material；The metal layer or metal
Protective layer can be metal mirror layer, or metal adhesion layer.
As a preferred option, the functional layer is made with the metal layer by same material.
As a preferred option, when LED chip is using LED structure (Horizontal-type n-side on the side of the horizontal pole n
Up LED structure) when, can be filled adhesives in the hollow space, the adhesives preferably can with as function
The adhesive layer integrally connected and composition material of layer are identical.
Wherein, first semiconductor layer and the second semiconductor layer are each independently n-type semiconductor layer and p-type semiconductor
One of layer, and the two is not n-type semiconductor layer or p-type semiconductor layer simultaneously.Constitute the first semiconductor layer and the second semiconductor layer
Material can be common semiconductor material, including but not limited to the quaternary semiconductors material such as InGaN ternary or GaAsInP.
Wherein, the groove structure inner insulating layer with a thickness of 0.1-1 μm, preferably 0.1 μm or its multiple；Insulating layer
Material can be SiOx, SiNx, TiO2,AlxOy,MgF2Contour penetrance fluorine/nitrogen/oxide, preferably have both low-refraction and
Material of high thermal conductivity MgF2。
Wherein, in the groove structure coat of metal with a thickness of 0.2-1 μm, preferably 0.5 μm；Coat of metal
Material can be Ag, the metal or alloy for LED light source tool high reflectance characteristic such as Al, Au, preferably metal Ag.
A kind of manufacturing method of the invention LED chip includes the following steps: (1) by conventional method in the first substrate
On successively obtain the first semiconductor layer, mqw layer and the second semiconductor layer；(2) definition groove structure figure in place, and according to
According to definition graphic structure from the second inward-facing etching of semiconductor layer appearance, form groove structure；(3) it is being etched with conventional method
Insulating layer is plated on good groove structure medial surface and/or groove bottom；(4) with conventional method in the second semiconductor layer outer surface and recessed
It is coated with or is not coated on the face of insulating layer in slot structure and continuously plate metal layer or coat of metal；(5) will be coated with metal layer or
The one side of coat of metal and the second substrate by functional layer in conjunction with；(6) it removes the first substrate and is wrapped according to conventional method
Include the subsequent steps such as production contact electrode, roughening, cutting.
On the one hand groove structure that the invention is removed by the lower section setting area property in Pad and/or finger, and
Insulating layer and coat of metal are further set, have effects that guide electric current and Omni-directional reflector (ODR), current path can
To avoid light from being covered and absorbed by electrode around at electrode shading, allows input carrier that can meet light out in active position, increase
Add luminous and efficiency of light extraction；In addition, the structure setting trapezoidal for groove structure, the light that MQW can more be gone out downward to light is exported
Semiconductor structure.On the other hand, the groove structure that setting area property removes below Cutting Road makes to draw first connecing of splitting or cut
Contacting surface is semiconductor material, reduces the electric conductivity caused by being metal because of the first contact surface and/or inhales the bi- of rotation optical activity
The splash of product and clast, and then avoid the reduction that positive or side wall resulting from goes out light and Ir yield.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of embodiment of the invention LED chip structure；
Fig. 2 is a kind of structural schematic diagram of embodiment containing Cutting Road before the invention LED chip is cut；
Fig. 3-5 is the structural schematic diagram of the second-four kinds embodiments of the invention LED chip structure；
Fig. 6 is the invention LED chip structure manufacturing process schematic diagram.
Wherein, 1-Pad；2-finger；3- groove structure；4- insulating layer；5- coat of metal；The first semiconductor layer of 6-；
7-MQW layers；The second semiconductor layer of 8-；9- metal layer；10- functional layer；The first substrate of 11-；The second substrate of 12-；13- Cutting Road；
14- hollow space.
Specific embodiment
The invention is further described below by conjunction with attached drawing.
It, can be by having such as if Fig. 1 is a kind of structural schematic diagram of preferred embodiment of the invention LED chip structure
The epitaxial wafer of Cutting Road structure shown in Fig. 2 is cut into, and a kind of more specific manufacturing process schematic diagram (is schemed as shown in Figure 6
In Cutting Road part is omitted, disclosure can be created according to the present invention and deduce that Cutting Road is partially forming process).It is right below
LED chip structure and its manufacturing method as shown in Figure 1 is described further.
Firstly, the first semiconductor layer 6, mqw layer 7 are successively obtained on the first substrate 11 by conventional method such as Fig. 6 (A)
With the second semiconductor layer 8, as non-limiting example, first substrate 11 can be GaAs substrate, and described the first half lead
Body layer 6 and the second semiconductor layer 8 are respectively n-type semiconductor layer and p-type semiconductor layer.It is in place using yellow light lithographic, such as
Below Pad and/or finger and epitaxial wafer Cutting Road lower section is prolonged on Cutting Road direction, and the figure of groove structure 3 is defined, and
According to the graphic structure of definition from the inward-facing etching of 8 appearance of the second semiconductor layer, groove structure 3 is formed, such as Fig. 6 (B), groove knot
Structure 3 is rectangle, part recess structure 3 or the isosceles trapezoid such as 1 lower section Pad in Fig. 3 in detail in this figure, and wherein isosceles are terraced
The sharp angle of shape is preferably greater than 45 °.It is plated on 3 medial surface of groove structure and/or groove bottom etched with conventional method
Insulating layer 4, such as Fig. 6 (C), using plating insulating layer 4 on preferred medial surface and groove bottom in this example；In non-limiting example
In, insulating layer with a thickness of 0.1-1 μm, preferably 0.1 μm or its multiple, the material of insulating layer can be SiOx, SiNx,
TiO2,AlxOy,MgF2Contour penetrance fluorine/nitrogen/oxide, preferably has both low-refraction and material of high thermal conductivity MgF2。
It is continuously plated on the face that conventional method is coated in 8 outer surface of the second semiconductor layer and groove structure 3 or is not coated with insulating layer 4
Metal layer 9 or coat of metal 5；It is convenient for preparation in this example, such as Fig. 6 (D), same material can be used and be formed simultaneously metal layer 9
With coat of metal 5, i.e. the two is formed simultaneously or is made in same preparation process；In non-limiting example, metal is protected
Sheath 5 or metal layer 9 with a thickness of 0.2-1 μm, preferably 0.5 μm, material can be Ag, and Al, Au etc. have LED light source high
The metal or alloy of reflectivity Characteristics, preferably metal Ag.The one side and the second lining of metal layer 9 or coat of metal 5 will be coated with
Bottom 12 is combined by functional layer 10, such as Fig. 6 (E), at this time from the cohesive position of 5 both ends of coat of metal and metal layer 9 to
A hollow space 14 is formed inside groove structure 3, is and function adjacent below the metal layer 9 below the hollow space 14
Layer 10, in non-limiting example, the second substrate 12 can be Sapphire Substrate, and functional layer 10 can be metal adhesion layer,
Other structures functional layer can be also further added between functional layer 10 and the second substrate 12.The first substrate 11 is removed, such as Fig. 6 (F),
It carries out including the subsequent steps such as production contact electrode, roughening, cutting according to conventional method, can be obtained LED core as shown in Figure 1
Chip architecture, wherein cutting process is carried out along the Cutting Road 13 with groove structure 3, as shown in Figure 2.
Wherein, the groove structure of the invention also uses the production of other structures type LED chip, such as horizontal n simultaneously
The production of the LED chip of LED structure (Horizontal-type n-side up LED structure) on the side of pole, such as Fig. 4 institute
Show, structure is similar with manufacturing process, repeats no more.As another embodiment, for the Horizontal-type n-
The LED chip of side up LED structure can also make in manufacturing process hollow space 14 fill adhesives, preferably
Adhesives is material identical with functional layer 10, then obtains LED chip structure as shown in Figure 5 using same method；Or
Person directly can make simultaneously function using same material in metal layer 9 and coat of metal 5 before being combined with the second substrate 12
Filling in layer 10 and progress hollow space 14, is then combined with the second substrate 12 again.
The foregoing is merely the preferred embodiments of the invention, are not intended to limit the invention creation, all at this
Within the spirit and principle of innovation and creation, any modification, equivalent replacement, improvement and so on should be included in the invention
Protection scope within.
Claims (4)
1. a kind of LED epitaxial wafer, in the epitaxial wafer, below epitaxial wafer Cutting Road, along Cutting Road direction, it is provided with one
A regional groove structure removed, the groove structure from the second semiconductor layer bottom cross over upwards the second semiconductor layer with
Extended to after mqw layer the first semiconductor layer by layer in, side and/or groove bottom in the groove structure are equipped with insulation
Layer；On side and/or groove bottom in the groove structure, have insulating layer then in being additionally provided on the insulating layer and described
The coat of metal of adjacent metal layer linking below two semiconductor layers, from the cohesive position at the coat of metal both ends to recessed
A hollow space is formed inside slot structure, is and conventional arrangement of function adjacent below the metal layer below the hollow space
Ergosphere.
2. a kind of LED epitaxial wafer according to claim 1, which is characterized in that the section of the groove structure be rectangle or
Isosceles trapezoid.
3. a kind of LED epitaxial wafer according to claim 1, which is characterized in that the metal layer and coat of metal are by same
Kind material is made.
4. a kind of LED epitaxial wafer according to claim 1, which is characterized in that when LED chip is using LED on the side of the horizontal pole n
When structure, adhesives is filled in the hollow space.
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| CN101878541A (en) * | 2007-10-01 | 2010-11-03 | 昭和电工株式会社 | Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device |
| CN102024889A (en) * | 2009-09-10 | 2011-04-20 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN102593292A (en) * | 2011-01-12 | 2012-07-18 | 晶元光电股份有限公司 | Light-emitting device |
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| TWI244220B (en) * | 2004-02-20 | 2005-11-21 | Epistar Corp | Organic binding light-emitting device with vertical structure |
| KR20120115775A (en) * | 2011-04-11 | 2012-10-19 | 서울옵토디바이스주식회사 | Light emitting diode and method for fabricating the same |
| DE102011112000B4 (en) * | 2011-08-31 | 2023-11-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED chip |
| CN102593284B (en) * | 2012-03-05 | 2014-06-18 | 映瑞光电科技(上海)有限公司 | Methods for manufacturing isolation deep trench and high voltage LED chip |
| CN103236474A (en) * | 2013-04-09 | 2013-08-07 | 中国科学院半导体研究所 | Method for manufacturing optionally cut high-voltage LED devices |
| CN104393135B (en) * | 2014-11-18 | 2017-02-22 | 湘能华磊光电股份有限公司 | Manufacturing method of LED (Light Emitting Diode) chip |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101878541A (en) * | 2007-10-01 | 2010-11-03 | 昭和电工株式会社 | Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device |
| CN102024889A (en) * | 2009-09-10 | 2011-04-20 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN102593292A (en) * | 2011-01-12 | 2012-07-18 | 晶元光电股份有限公司 | Light-emitting device |
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