CN105206538B - Wafer scale transfer modling and its implementation - Google Patents
Wafer scale transfer modling and its implementation Download PDFInfo
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- CN105206538B CN105206538B CN201410445854.0A CN201410445854A CN105206538B CN 105206538 B CN105206538 B CN 105206538B CN 201410445854 A CN201410445854 A CN 201410445854A CN 105206538 B CN105206538 B CN 105206538B
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- 239000000206 moulding compound Substances 0.000 claims abstract description 62
- 238000002347 injection Methods 0.000 claims abstract description 52
- 239000007924 injection Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 50
- 238000000465 moulding Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 54
- YQOLEILXOBUDMU-KRWDZBQOSA-N (4R)-5-[(6-bromo-3-methyl-2-pyrrolidin-1-ylquinoline-4-carbonyl)amino]-4-(2-chlorophenyl)pentanoic acid Chemical compound CC1=C(C2=C(C=CC(=C2)Br)N=C1N3CCCC3)C(=O)NC[C@H](CCC(=O)O)C4=CC=CC=C4Cl YQOLEILXOBUDMU-KRWDZBQOSA-N 0.000 description 30
- 229940125844 compound 46 Drugs 0.000 description 30
- 239000000758 substrate Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000748 compression moulding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
Abstract
It is placed in the invention provides a kind of method, including by encapsulating structure in encapsulating mold so that the mould release membrance in the top surface contact encapsulating mold of the component pipe core in encapsulating structure.By injection port, moulding compound is injected into the inner space of encapsulating mold, injection port is located at the side of encapsulating mold.During moulding compound is injected, steps of exhausting is implemented by the first exhaust port of encapsulating mold and second exhaust port.First exhaust port has the first flow velocity, and second exhaust port has the second flow speed different from the first flow velocity.The present invention relates to wafer scale transfer modling and its implementation.
Description
The cross-application of related application
The application is following commonly assigned U.S. Patent application (patent application serial number 13/411,293,2012 3
Months 2 days submit, and it is entitled " Wafer-Level Underfill and Over-Molding ") part continuation application.
Technical field
The present invention relates to wafer scale transfer modling and its implementation.
Background technology
In the encapsulation of integrated circuit, generally by flip-chip bond come package-on-package components (such as, component pipe core and
Package substrate).In order to protect the package parts of stacking, moulding compound is arranged on around component pipe core.
Traditional molding methods include compression molding and transfer modling.Compression molding can be used for post forming (ove-
rmolding).Because compression molding cannot be used for the gap between the tube core that filling stacks, need different from compressing mould
Bottom filler is distributed in the step of modeling.On the other hand, transfer modling can be used for molded underfill thing being filled in stacking
Between package parts and top.Therefore, transfer modling can be used for distributing bottom filler and moulding compound in same step.So
And due to the uneven distribution of moulding compound, transfer modling cannot be used for the packaging part for including circular wafers.
The content of the invention
In order to solve problems of the prior art, according to an aspect of the invention, there is provided a kind of method, bag
Include：Encapsulating structure is placed in encapsulating mold, the top surface of the component pipe core in the encapsulating structure is contacted in the encapsulating mold
Mould release membrance；By injection port, moulding compound is injected into the inner space of the encapsulating mold, the injection port is located at
First side of the encapsulating mold；And during the moulding compound is injected, pass through the first exhaust port of the encapsulating mold
It is vented with second exhaust port, the first exhaust port has the first flow velocity, and the second exhaust port has difference
In the second flow speed of first flow velocity.
In the above-mentioned methods, the first exhaust port is more farther apart from the injection port than the second exhaust port,
And first flow velocity is higher than the second flow speed.
In the above-mentioned methods, the first exhaust port and the second exhaust port are connected to same vacuum environment,
And the first size of the first exhaust port is different from the second size of the second exhaust port.
In the above-mentioned methods, in addition to：Multiple exhaust ports in the encapsulating mold, wherein, the multiple row
Gas port constantly diminishes with from the multiple exhaust port to the reduction of the respective distance of the injection port.
In the above-mentioned methods, the exhaust by the first Valve controlling by the first exhaust port, and by the second valve
The exhaust by the second exhaust port is controlled, and first valve and second valve control described first respectively
Flow velocity and the second flow speed.
In the above-mentioned methods, the first exhaust port is more farther apart from the injection port than the second exhaust port,
And first flow control is more than the second flow speed by first valve and second valve.
In the above-mentioned methods, first valve and second valve are respectively by the first exhaust port and described
Two exhaust ports are connected to same vacuum chamber.
According to another aspect of the present invention, a kind of method is additionally provided, including：Encapsulating structure is placed in encapsulating mold
In portion space, the top surface of the component pipe core in the encapsulating structure contacts the mould release membrance in the encapsulating mold, wherein, the bag
Envelope mould includes：Injection port；With with various sizes of first exhaust port and second exhaust port；By the encapsulating structure
It is placed in the encapsulating mold in chamber, wherein, described in each general of the first exhaust port and the second exhaust port
Inner space is mutually connected to the part outside the encapsulating mold of the chamber；The chamber is vacuumized；And pass through
The injection port, moulding compound is injected into the inner space of the encapsulating mold.
In the above-mentioned methods, in addition to：Mould release membrance is placed in the inner space of the encapsulating mold so that the encapsulation
The top surface of the component pipe core of structure contacts the mould release membrance.
In the above-mentioned methods, the first size of the first exhaust port is more than the second chi of the second exhaust port
It is very little, and the first exhaust port is more farther apart from the injection port than the second exhaust port.
In the above-mentioned methods, the encapsulating mold has round-shaped, the first exhaust port and the injection port
Positioned at the opposite sides of the diameter of the encapsulating mold, and the first exhaust port is in all exhausts of the encapsulating mold
There is full-size in port.
In the above-mentioned methods, in addition to：After the moulding compound is injected, the moulding compound is solidified；And from institute
State the packaging part for being removed in encapsulating mold and including the encapsulating structure and the moulding compound.
In the above-mentioned methods, the encapsulating structure includes：Wafer；And multiple tube cores, above the wafer and
The wafer is bonded to, wherein, during the moulding compound is injected, the moulding compound flow to described from the side of the wafer
The opposite side of wafer.
In the above-mentioned methods, no pump and valve are connected to the first exhaust port and the second exhaust port.
According to another aspect of the invention, a kind of device is additionally provided, including：Encapsulating mold, including：Top；And edge
Ring, there is annular shape, wherein, the edge ring is located at below the edge at the top and is connected to the side at the top
Edge, and the inner space that the edge ring is surrounded below the top；Injection port, it is connected to the inside of the encapsulating mold
Space；And first exhaust port and second exhaust port, at the edge ring, wherein, the first exhaust port tool
There is first size, and the second exhaust port has the second size different from the first size.
In said apparatus, in addition to：Distributor, the injection port is connected to, wherein, the distributor is configured to lead to
The injection port is crossed to be injected into moulding material in the inner space of the encapsulating mold.
In said apparatus, in addition to：Controller, the first exhaust port and the second exhaust port are connected to,
Wherein, the controller is configured to open the first exhaust port and the second exhaust port respectively in different time points.
In said apparatus, the first size is more than second size, and described in the first exhaust port ratio
Second exhaust port is farther apart from the injection port.
In said apparatus, the encapsulating mold has round-shaped, the first exhaust port and the injection port
Positioned at the opposite sides of the diameter of the encapsulating mold, and the first exhaust port is in all exhausts of the encapsulating mold
There is full-size in port.
In said apparatus, in addition to：Multiple exhaust ports at the edge ring, wherein, the multiple exhaust
The size of port constantly diminishes with from the multiple exhaust port to the reduction of the respective distance of the injection port.
Brief description of the drawings
When reading in conjunction with the accompanying drawings, the present invention may be better understood according to the following detailed description.It should be emphasized that
, the standard practices in industry, various parts are not drawn to scale., can be with fact, in order to clearly discuss
Meaning increase or the size for reducing various parts.
Fig. 1 shows the sectional view of the wafer scale transfer modling technique according to some embodiments；
Fig. 2 shows the stereogram of the encapsulating mold according to some embodiments；
Fig. 3 is shown according to the wafer scale transfer modling technique of some embodiments with various sizes of exhaust port
Top view；
Fig. 4 shows the top view of the wafer scale transfer modling technique according to alternative embodiment, wherein, valve, which is connected to, to be beaten
The different different exhaust ports of evolution formula；
Fig. 5 to Fig. 9 shows the top view in the interstage of the time delay wafer scale transfer modling technique according to some embodiments
Figure；
Figure 10 shows the top view of the wafer scale transfer modling technique according to alternative embodiment；
Figure 11 shows the encapsulating structure of the molding according to some embodiments；
Figure 12 shows the top view of the wafer scale transfer modling technique according to some embodiments, wherein, component pipe core
Active parts faces mould release membrance；And
Figure 13 shows the encapsulating structure of the molding according to some embodiments, wherein, the active parts of component pipe core passes through
The encapsulating structure of caused molding and expose.
Embodiment
Disclosure below provides many different embodiments or example, to realize the different characteristic of the present invention.Below
The instantiation for describing part and arrangement is of the invention to simplify.Certainly, these are example and are not intended to limit the present invention.
For example, in the following description, above second component or upper formation first component may include first component and second component with straight
The embodiment that the mode of contact is formed, and also be included between first component and second component and can form extra portion
Part, so that the embodiment that first component and second component can be not directly contacted with.In addition, the present invention in various embodiments may be used
With repeat reference numerals and/or letter.This repetition is in order at simplified and clear purpose, but its own does not indicate that and discussed
Each embodiment and/or configuration between relation.
In addition, for ease of description, such as " ... below ", " ... it is following ", " lower section ", " in ... top ", " top
" etc. relative space position term to can be used for describing an element or part as depicted herein (or another with another
The relation of element or part a bit).In addition to the orientation shown in figure, these relative space position terms are intended to include device to make
With or operation in different azimuth.Device can otherwise be oriented and (is rotated by 90 ° or in other orientation), and herein
The relative space position descriptor used can be explained similarly accordingly.
According to the present invention each exemplary embodiment, there is provided a kind of device for wafer scale transfer modling technique with
A kind of and method for implementing wafer scale transfer modling.Discuss the change of embodiment.In each view and illustrative embodiment
In, similar reference number is used to refer to similar element.
Fig. 1 shows the sectional view of the wafer scale transfer modling technique according to some embodiments of the present invention.With reference to figure 1,
Encapsulating structure 10 is placed in encapsulating mold 26.Encapsulating structure 10 includes wafer 20 and is bonded to the tube core 22 of wafer 20.One
In a little embodiments, wafer 20 is device wafers, and device wafers include multiple device chips, and device chip includes active device
(such as, transistor).Passive device (such as, resistor, capacitor, inductor and/or transformation are may also include in device wafers 20
Device).Wafer 20 also includes Semiconductor substrate (not shown), such as, silicon substrate, silicon-Germanium substrate, silicon-carbon substrate or III-V race's chemical combination
Thing Semiconductor substrate.In an alternative embodiment, wafer 20 is the interpolation wafer for not including active device wherein.It is interior in wafer 20
In the embodiment for inserting wafer, wafer 20 may also include Semiconductor substrate.It may include in interpolation wafer 20 or may not include passive device
Part, such as, resistor, capacitor, inductor and/or transformer.For example, as shown in Fig. 2 the top view of wafer 20 can be round
Shape, but wafer 20 can have other top view shapes of such as rectangle.It may include active device in component pipe core 22.According to one
A little embodiments, component pipe core 22 include memory dice, such as, static RAM (SRAM) tube core, dynamic random
Access memory (DRAM) tube core etc..Alternatively, tube core 22 can be the packaging part for the tube core for including stacking.
Encapsulating mold 26 includes top (lid) 26A that can have circular top to regard shape (Fig. 2 to Fig. 9).As shown in figure 1, by
Mould release membrance 27 is attached to the inner surface of encapsulating mold 26 made of flexible material.The bottom surface of the top surface of tube core 22 and mould release membrance 27 connects
Touch.Therefore, there is no leaving space on the top surface of tube core 22.According to some embodiments, mould release membrance 27 also may extend to encapsulating mould
The madial wall of tool 26.On the other hand, the gap between adjacent tube core 22 keeps not filled by mould release membrance 27.Therefore, in molding work
In skill, the moulding compound then distributed flows through the gap between adjacent tube core 22, and may be in the wafer 20 of tube core 22 and lower section
Between gap in flow, but not tube core 22 top flow.Because the gap between tube core 22 is narrow, so not
Allow moulding compound to be flowed above tube core 22 and cause narrow moulding compound path.This causes the difficulty of moulding technology to increase, therefore,
According to an embodiment of the invention, the scheme shown using Fig. 4 into Figure 10 is to ensure effective and uniform molding.
Encapsulating mold 26 also includes the edge ring 26B for surrounding tube core 22 (referring also to Fig. 2).Edge ring 26B is connected to top
26A edge and extended downwardly from top 26A edge.Regions of the edge ring 26B below the 26A of top, the region exists
The hereinafter referred to as inner space of encapsulating mold 26.Therefore, tube core 22 and mould release membrance 27 are located at the inside sky of encapsulating mold 26
Between in.Encapsulating mold 26 can be formed by aluminium, stainless steel or ceramics etc..Edge ring 26B bottom can contact with the top surface of wafer 20,
So as to the inner space of sealed enclosure mould 26.
As shown in figure 1, in certain embodiments, encapsulating mold 126 is placed in encapsulating mold 26 (for lower encapsulating mold)
Lower section.It can be combined and carry out molded package element 10 using encapsulating mold 26 and 126.In an alternative embodiment, not using lower encapsulating mould
Tool 126.According to an alternative embodiment of the invention, edge ring 26B feather edge is placed on the marginal portion of wafer 20.At these
In embodiment, not using lower encapsulating mold.
Fig. 1 also show molding injection port 30 and exhaust port 32, and they are located at the opposite sides of encapsulating mold 26.This
Outside, mold injection port 30 and exhaust port 32 is located on edge ring 26B and including the inner space of encapsulating mold 26 is connected
The opening for the exterior space being connected to outside encapsulating mold 26.Because Fig. 1 is sectional view, single exhaust port is shown
32.However, as shown in Fig. 2 to Fig. 8, multiple exhaust ports 32 can be placed on edge ring 26B.Mold distributor (molding
Dispenser) 40 it is connected to molding injection port 30 and is configured as conducting moulding material 46 to molding injection port 30.
Molding distributor 40 may include accumulator tank (not shown) to store moulding material 46.
Fig. 2 shows the stereogram of encapsulating mold 26.In certain embodiments, exhaust port 32 (including 32-1 to 32-m)
With uniform size, wherein, depending on the shape of exhaust port 32, size can be diameter or length/width.For example, row
Gas port 32 has circular open or octagon opening.In an alternative embodiment, exhaust port 32 is of different sizes, and
The size of exhaust port 32 is relevant with the relevant position where corresponding exhaust port 32.
By exhaust port 32, the inner space inside encapsulating mold 26 can produce vacuum.For example, pipeline 52 (Fig. 4) can
Exhaust port 32 is connected to, and can implement to vacuumize by pipeline 52.Alternatively, as shown in figures 1 and 3, whole encapsulating
Mould 26 and corresponding encapsulating structure 10 can be placed in can be in the vacuum environment 36 of chamber so that all exhaust ports 32 are used for same
When the inner space of encapsulating mold 26 is vacuumized.In the embodiment that vacuum environment 36 is provided, it can be not connected to
The pipeline of single exhaust port 32.By dividing with being more uniformly distributed with various sizes of exhaust port 32, moulding material 46
Fit in whole wafer 20.
Fig. 3 shows the top view according to the encapsulating mold 26 of some embodiments, wafer 20 and tube core 22.As shown in figure 3,
The inner space of encapsulating mold 26 is divided into multiple horizontal and vertical bands (street) by tube core 22, wherein, in follow-up mould
Mould in technique, moulding compound flows through band and the gap between tube core 22 and wafer 20.Mold injection port 30 and exhaust port 32-
1 can be in edge ring 26B opposite sides.The diameter 42 that exhaust port 32 can be symmetrical with edge ring 26B is set, wherein, directly
Footpath 42 is to mold injection port 30 as one end in its both ends.In certain embodiments, exhaust port 32-1 is located at diameter 42
The other end at.In the alternative embodiment (not shown) of the present invention, there is no exhaust port 32 at the other end.On the contrary, two
Exhaust port is symmetrical and than other all exhaust ports 32 all closer to diameter 42 relative to the other end of diameter 42
The other end.
As shown in figure 3, exhaust port 32 is denoted as 32-1 to 32-m, wherein, it can be any whole equal to or more than 2 that m, which is,
Several sequence numbers.As shown in figure 3, for convenient, exhaust port 32 is referred to alternatively as exhaust port 32-n, wherein, Integer n be sequence number simultaneously
And between 1 between m.With sequence number n increase, exhaust port 32-n to the distance for molding injection port 30 reduces.According to one
A little embodiments, size/area of each exhaust port with sequence number (n+1) are equal to or less than the exhaust ends with sequence number n
Size/area of mouth.Exhaust port 32-1 to 32-m can have the size constantly to diminish.For example, in certain embodiments, each
Exhaust port 32- (n+1) size/area is less than exhaust port 32-1 size/area.Therefore, exhaust port 32-1 is being arranged
There can be full-size W1 in the overall dimension of gas port 32.Exhaust port 32-m closest to molding injection port 30 can have
Minimum dimension Wm.In certain embodiments, W1/Wm ratio is more than 1 and can be greater than about 5.
It should be understood that because exhaust port 32 shares identical pressure with the inner space of environment 36 and encapsulating mold 26,
So the size of exhaust port 32 can be directly related with the flow velocity for the gas for flowing through exhaust port 32.Therefore, with corresponding row
The increase of the sequence number of gas port 32, exhaust port 32-1 to 32-m can have the gas flow rate constantly to diminish.In addition, exhaust port
32-1 can have peak flow rate (PFR), and exhaust port 32-m can have lowest speed.
In the fig. 3 embodiment, exhaust port 32 can be not connected directly to any pump or valve, and by vacuum environment 36
Pressure differential between the inner space of encapsulating mold 26 causes the exhaust by exhaust port 32.On the other hand, pump can be passed through
44 (Fig. 1 and Fig. 3) vacuumize to vacuum environment 36.
According to some embodiments, because encapsulating mold 26 is placed in environment 36, and exhaust port 32 is by encapsulating mold 26
Inner space be connected to environment 36, so moulding technology include gas/air is pumped out (for example, passing through pump from environment 36
44).Therefore, when moulding compound 46 (being depicted with arrows) is injected into the inner space of encapsulating mold 26, in inner space
Vacuum is pulled along moulding compound 46 and fills the gap between the gap between tube core 22 and tube core 22 and wafer 20.At this
In a little embodiments, no pump or valve are connected directly to exhaust port 32.
Also as shown in figure 3, in the injection period of moulding compound 46, because exhaust port 32 is of different sizes, so mould
The flowing of plastics 46 is affected.For example, from molding injection port 30 to exhaust port 32-1 path ratio to other any rows
The path of gas port 32 will be grown.Therefore, exhaust port 32-1 maximum exhaust size helps the ratio of moulding compound 46 to flow to other rows
Gas port 32 all quickly flow to exhaust port 32-1.The design of exhaust port 32 causes moulding compound 46 to be distributed evenly in encapsulating
In all parts of the inner space of mould 26, so as to compared to the feelings all if all of exhaust port 32 with identical size
Condition, moulding compound 46 can more synchronous mode reach the totality space of encapsulating mold 26.
Fig. 4 to Fig. 9 is shown according to the interstage formed in moulding technology of alternative embodiment and corresponding device
Sectional view.Unless otherwise stated, the material and forming method of part in these embodiments are substantially similar with them
The material of part (these parts are indicated in the embodiment that Fig. 1 is shown into Fig. 3 with similar reference number) and formation side
Method is identical.The details of technique and material accordingly, with respect to Fig. 4 parts shown into Fig. 9 can shown to Fig. 1 into Fig. 3
Found in the discussion of embodiment.
Fig. 4 shows the top view according to the encapsulating mold 26 of alternative embodiment, wafer 20 and tube core 22.In these realities
Apply in example, it is vented by shared environment 36 (such as in Fig. 3), but the multiple valves 48 that 48-1 to 48-m will be denoted as
It is connected to corresponding exhaust port 32-1 to 32-m.In certain embodiments, exhaust port 32-1 to 32-m has identical chi
Very little/area.In an alternative embodiment, exhaust port 32-1 to 32-m has a different size and area, and with sequence number
Increase, corresponding exhaust port 32 can have the size constantly to diminish.
According to an embodiment of the invention, exhaust port 32 is connected to chamber 50 by corresponding valve 48 and pipeline 52, its
In, represent some pipelines 52 with lines.For example, chamber 50 is vacuumized by pump 44.Therefore, chamber 50 has low pressure (example
Such as, below about 10 supports).Valve 48 is differentially opened with different opening sizes, so as to through different valves 48
Air-flow is different.According to some embodiments, with the increase of sequence number, corresponding valve 48-1 to 48-m opening (or the mouth of opening
Footpath or diameter) constantly diminish.In other words, as the increase of sequence number, corresponding valve 48-1 to 48-m flow velocity constantly diminish.
Due to valve 48-1 to 48-m different flow velocitys, moulding compound 46 compares on the direction towards exhaust port 32-1
It is pulled faster on towards the direction of other exhaust ports.In addition, from exhaust port 32-1 to exhaust port 32-m, moulding compound
46 flow velocity constantly diminishes to make up the distance constantly to diminish from corresponding exhaust port 32 to molding injection port 30.Cause
This, can fill moulding compound 46 in the same time in the different piece to the inner space of encapsulating mold 26.
Fig. 5 to Fig. 9 shows the top view in the interstage in molded package structure 10 according to alternative embodiment.With reference to
Fig. 5, the multiple valves 48 for being denoted as 48-1 to 48-m are connected to corresponding exhaust port 32-1 to 32-m.Exhaust port 32-1 is extremely
32-m can be of the same size or can have mutually different dimensions.Multiple exhaust ports 32 are connected by valve 48-1 to 48-m
It is connected to vacuum chamber 50.Valve 48 is additionally coupled to controller 54 and is controlled by it, and controller 54 is configured as controlling each valve
Door 48 is with the opening and closing of desired time point.Electrical connector from controller 54 to valve 48 is shown as 56.
With reference to figure 5, moulding compound 46 is injected into encapsulating mold 26.At first time point T1, valve 48-1 is opened, and is made
Obtain air to discharge by valve 48-1, as shown in arrow drawn on valve 48-1.Other all valve 48-2 to 48-m are protected
Hold closing.Time point T1 can be the same time point for starting to inject moulding compound 46 in encapsulating mold 26.Alternatively, time point
T1 was led or lag in the time point for starting to be injected into moulding compound 46 in encapsulating mold 26.Therefore, as shown in figure 5, moulding compound
46 mainly flow up in the folk prescription marked with arrow 46-1, and the direction points to exhaust port parallel to from molding injection port 30
32-1 direction.Now, the moulding compound 46 for flowing to the exhaust port in addition to exhaust port 32-1 is minimum.
With reference to figure 6, at the second time point T2 after first time point T1, valve 48-2 is opened.Valve 48-1 is still protected
Hold opening so that air is discharged by valve 48-1 and 48-2 simultaneously, as shown in arrow drawn on valve 48-1 and 48-1.Can
Control valve 48-1 and 48-2 so that exhaust port 32-1 flow velocity is identical with exhaust port 32-2 flow velocity, or be more than or
Less than exhaust port 32-2 flow velocity.Other all valve 48-3 to 48-m are remained turned-off.Therefore, as shown in fig. 6, moulding compound 46
Mainly flowed up in the side marked with arrow 46-1 and 46-2.Now, flow in addition to exhaust port 32-1 and 32-2
The moulding compound 46 of exhaust port is minimum.Time difference between time point T1 and T2 is influenceed by various factors, and these factors include
But the power of the size in the gap being not limited between the viscosity of moulding compound 46, tube core 22, the size of valve 48 and pump 44.
Next, as shown in fig. 7, at the 3rd time point T3 after the second time point T2, valve 48-3 is opened.Valve
48-1 and 48-2 are still stayed open so that air is discharged by valve 48-1,48-2 and 48-3, such as valve 48-1,48-2 and 48-
On 3 shown in drawn arrow.Controllable valve 48-1,48-2 and 48-3 so that exhaust port 32-1 flow velocity and exhaust port
32-2 and/or 32-3 flow velocity is identical, or the flow velocity more than or less than exhaust port 32-2 and/or 32-3.Except valve 48-
1st, all valves 48 of other beyond 48-2 and 48-3 remain turned-off.Therefore, as shown in fig. 7, moulding compound 46 is mainly with arrow
The side of 46-1,46-2 and 46-3 mark flows up.Now, the row in addition to exhaust port 32-1,32-2 and 32-3 is flowed to
The moulding compound 46 of gas port 32 is minimum.Time difference between time point T2 and T3 is influenceed by different factors, these factor bags
Include the power of the size in gap between the viscosity of moulding compound 46, tube core 22, the size of valve 48 and pump 44.Therefore, can lead to
Crossing experiment, to find optimal time poor (T3-T2).
In a subsequent step, valve 48-4 to 48-m is opened successively, wherein, each valve 48 is with smaller sequence number
Valve opening time after open.For example, with reference to figure 8, at the time point T4 after the 3rd time point T3, valve 48-4
Open.As shown in figure 9, valve 48 is opened successively, until time point Tm when valve 48-m is opened.Now, moulding compound 46 may
The inner space of encapsulating mold 26 is not filled up completely with.After time point Tm, all valve 48-1 to 48-m are stayed open,
And continue to inject moulding compound 46, until moulding compound 46 be filled up completely with encapsulating mold 26 (may include tube core 22 and wafer 20 it
Between gap).
Each time point in time point T2 to Tm is relative to the hysteresis at the time point before it by controller 54
Control, wherein, can by experiment find optimal time point T1 to Tm, as long as and mould encapsulating structure design and molding
The type of material keeps constant, and optimal time point T1 to Tm can be used for same type of product.
Figure 10 shows the moulding technology according to alternative embodiment of the present invention.In these embodiments, with molding injection end
Situation of the mouth 30 positioned at the sides of encapsulating mold 26 is different, and molding injection port 30 is located on the top 26A of encapsulating mold 26.Row
Gas port 32 is distributed on edge ring 26B, and can be uniformly distributed so that between exhaust port 32 has uniformly each other
Every.In addition, in these embodiments, mould release membrance 27 contacts the top surface of tube core 22, and therefore, moulding compound is flowed through between tube core 22
Gap and tube core 22 and wafer 20 between gap, but do not flow through the top of tube core 22.
As shown in Figure 10, in order to allow to introduce moulding compound 46 in encapsulating mold 26, the center dies 20 ' in wafer 20 do not have
Have and engaged with tube core above 22, therefore, formation makes the space that moulding compound 46 is conducted into encapsulating mold 26.In addition, encapsulating mould
Tool 26 can be placed in vacuum environment 36, and vacuum environment 36 is connected to pump 44 so that air to be discharged from vacuum environment 36.
After the molding implantation step as shown in Fig. 3, Fig. 4, Fig. 9 or Figure 10 occurs, moulding compound 46 is filled up completely with bag
Seal the inner space of mould 26.Next, implement curing process to solidify moulding compound 46.According to the type of moulding compound 46, can lead to
Ultraviolet (UV) solidification, heat cure, infrared ray cured etc. are crossed to implement to solidify.After solidification, mould is taken out from encapsulating mold
The encapsulating structure 10 of system.As shown in figure 11, in caused structure, moulding compound 46 fills the gap between tube core 22 and may
Fill the gap between tube core 22 and wafer 20.Expose the top surface of tube core 22, tube core 22 is covered without moulding compound.
Figure 12 and Figure 13 shows the engagement of the encapsulating structure 10 according to alternative embodiment.In these embodiments, tube core
22 by engagement be composite wafer.Tube core 22 is bonded to wafer 20, and in these embodiments, wafer 20 is carrier.Carrier 20 can be with
It is the non-semiconductor carrier of silicon carrier either such as glass carrier or ceramic carrier.When wafer 20 is Silicon Wafer, it can be with
It is without the blank wafer for forming circuit.Tube core 22 is bonded to carrier 20 by adhesive 23.
In fig. 12, encapsulating structure 10 is placed in the inner space of encapsulating mold 26, tube core 22 up and with from
Type film 27 contacts.Tube core 22 includes the active surface part 24 for facing mould release membrance 27.Surface elements 24 may include metal pad, gold
Belong to post, solder areas and/or redistribution line etc., they can expose and be contacted with mould release membrance 27.Next, using with Fig. 2 to Fig. 9
The essentially identical method that is discussed implements moulding technology.After the molding process, mould release membrance 27 and encapsulating mold 26 are removed.
Figure 13 shows caused composite wafer, and it includes encapsulating structure 10 and moulding compound 46.In caused composite wafer
In, tube core 22 exposes their active parts.Therefore, redistribution line can be fanned out to composite wafer implementation such as formation (not show
Go out) additional technical steps.
Embodiments of the invention have some favorable characteristics.In an embodiment of the present invention, using transfer modling method, from
The top surface of the tube core of the encapsulating structure of type film contact molding.In the packaging part of caused molding, the top surface of component pipe core exposes
Without implementing grinding technics to expose the top surface of component pipe core 22.In addition, between moulding compound filling tube core 22 and wafer 20
Gap, it therefore, there is no need to extra underfill step.Moulding compound fills uniformly with encapsulating mold, and improves molding work
The efficiency of skill.
According to some embodiments of the present invention, a kind of method includes encapsulating structure being placed in encapsulating mold, encapsulating structure
In component pipe core top surface contact encapsulating mold in mould release membrance.Moulding compound is injected into by encapsulating mold by injection port
In inner space, injection port is located at the side of encapsulating mold.In the injection period of moulding compound, pass through the first row of encapsulating mold
Steps of exhausting is implemented in gas port and second exhaust port.First exhaust port has the first flow velocity, and second exhaust port has
Different from the second flow speed of the first flow velocity.
According to an alternative embodiment of the invention, a kind of method includes for encapsulating structure being placed in the inner space of encapsulating mold
It is interior, the mould release membrance in the top surface contact encapsulating mold of the component pipe core in encapsulating structure.Encapsulating mold include injection port and
With various sizes of first exhaust port and second exhaust port.This method also includes encapsulating structure and encapsulating mold being placed in
In chamber, wherein, first exhaust port and second exhaust port each of inner space is mutually connected to chamber positioned at encapsulating
The part of mold exterior.Chamber is vacuumized.By injection port, moulding compound is injected into the inner space of encapsulating mold.
According to the another alternative embodiment of the present invention, a kind of encapsulating mold includes top and edge ring in a ring, wherein,
Edge ring is located at below the edge at top and is connected to the edge at top.Edge ring surrounds the inner space of top lower section.Note
Inbound port is connected to the inner space of encapsulating mold.First exhaust port and second exhaust port are located at edge ring, wherein, the
One exhaust port has first size, and second exhaust port has the second size different from first size.
Foregoing has outlined the feature of several embodiments to cause those skilled in the art to be better understood from each of the present invention
Aspect.It should be appreciated by those skilled in the art they easily can be used for using based on the present invention to design or change
Realize the embodiment identical purpose introduced with the present invention and/or other techniques and structure for obtaining identical beneficial effect.
It should also be realized by those skilled in the art that this equivalent constructions are without departing from the spirit and scope of the present invention, and
In the case of without departing substantially from the spirit and scope of the present invention, they can make a variety of changes, replace and change herein.
Claims (19)
1. a kind of method of wafer scale transfer modling, including：
Encapsulating structure is placed in encapsulating mold, the top surface of the component pipe core in the encapsulating structure is contacted in the encapsulating mold
Mould release membrance；
By injection port, moulding compound is injected into the inner space of the encapsulating mold, the injection port is positioned at described
First side of encapsulating mold；And
During the moulding compound is injected, it is vented by the first exhaust port and second exhaust port of the encapsulating mold,
The first exhaust port has the first flow velocity, and the second exhaust port has the second different from first flow velocity
Speed, wherein, the encapsulating mold also includes additional exhaust port, and the additional exhaust port and the injection port are located at respectively
The opposite sides of the diameter of the encapsulating mold, the first exhaust port is than the second exhaust port apart from the injection end
Mouth is farther, and first flow velocity is higher than the second flow speed.
2. according to the method for claim 1, wherein, the first exhaust port and the second exhaust port are connected to
Same vacuum environment, and the first size of the first exhaust port is different from the second size of the second exhaust port.
3. the method according to claim 11, in addition to：Multiple exhaust ports in the encapsulating mold, wherein, institute
Multiple exhaust ports are stated with from the multiple exhaust port to the reduction of the respective distance of the injection port constantly to diminish.
4. the method according to claim 11, wherein, the exhaust by the first Valve controlling by the first exhaust port,
And by the exhaust controlled by the second exhaust port of the second valve, and first valve and second valve divide
First flow velocity and the second flow speed are not controlled.
5. according to the method for claim 4, wherein, first valve and second valve are by the first flow velocity control
It is made as being more than the second flow speed.
6. according to the method for claim 4, wherein, first valve and second valve are respectively by the first row
Gas port and the second exhaust port are connected to same vacuum chamber.
7. a kind of method of wafer scale transfer modling, including：
Encapsulating structure is placed in the inner space of encapsulating mold, described in the top surface contact of the component pipe core in the encapsulating structure
Mould release membrance in encapsulating mold, wherein, the encapsulating mold includes：
Injection port；
First exhaust port, wherein, the encapsulating mold has round-shaped, the first exhaust port and the injection port
Positioned at the opposite sides of the diameter of the encapsulating mold；With
Second exhaust port and additional exhaust port, there are different sizes；
The encapsulating structure and the encapsulating mold are placed in chamber, wherein, the first exhaust port and the second row
Each part outside the encapsulating mold that the inner space is mutually connected to the chamber of gas port, described second
Exhaust port is more farther apart from the injection port than the additional exhaust port, and the flow velocity of the second exhaust port is higher than
The flow velocity of the additional exhaust port；
The chamber is vacuumized；And
By the injection port, moulding compound is injected into the inner space of the encapsulating mold.
8. the method according to claim 11, in addition to：Mould release membrance is placed in the inner space of the encapsulating mold, made
The top surface for obtaining the component pipe core of the encapsulating structure contacts the mould release membrance.
9. according to the method for claim 7, wherein, the first size of the first exhaust port is more than the second exhaust
Second size of port, and the first exhaust port is more farther apart from the injection port than the second exhaust port.
10. the method according to claim 11, wherein, all exhausts of the first exhaust port in the encapsulating mold
There is full-size in port.
11. the method according to claim 11, in addition to：
After the moulding compound is injected, the moulding compound is solidified；And
Being removed from the encapsulating mold includes the packaging part of the encapsulating structure and the moulding compound.
12. according to the method for claim 7, wherein, the encapsulating structure includes：
Wafer；And
Multiple tube cores, above the wafer and the wafer is bonded to, wherein, during the moulding compound is injected,
The moulding compound flow to the opposite side of the wafer from the side of the wafer.
13. according to the method for claim 7, wherein, no pump and valve are connected to the first exhaust port and described
Second exhaust port.
14. a kind of implementation of wafer scale transfer modling, including：
Encapsulating mold, including：
Top；With
Edge ring, there is annular shape, wherein, the edge ring is located at below the edge at the top and is connected to described
The edge at top, and the inner space that the edge ring is surrounded below the top；
Injection port, it is connected to the inner space of the encapsulating mold；And
First exhaust port and second exhaust port, and additional exhaust port, at the edge ring, wherein, described
One exhaust port has first size, and the second exhaust port has the second size different from the first size, institute
State first exhaust port and the injection port be located at the edge ring diameter opposite sides, and the second exhaust end
Mouth is more farther apart from the injection port than the additional exhaust port, and the flow velocity of the second exhaust port is higher than the additional row
The flow velocity of gas port.
15. device according to claim 14, in addition to：Distributor, the injection port is connected to, wherein, described point
Orchestration is configured to that moulding material is injected into the inner space of the encapsulating mold by the injection port.
16. device according to claim 15, in addition to：Controller, it is connected to the first exhaust port and described
Two exhaust ports, wherein, the controller is configured to open the first exhaust port and described respectively in different time points
Two exhaust ports.
17. device according to claim 14, wherein, the first size is more than second size.
18. device according to claim 14, wherein, the encapsulating mold has round-shaped, and the first row
Gas port has full-size in all exhaust ports of the encapsulating mold.
19. device according to claim 14, in addition to：Multiple exhaust ports at the edge ring, wherein, institute
State the sizes of multiple exhaust ports with from the multiple exhaust port to the respective distance of the injection port reduction without
It is disconnected to diminish.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/302,728 | 2014-06-12 | ||
| US14/302,728 US9802349B2 (en) | 2012-03-02 | 2014-06-12 | Wafer level transfer molding and apparatus for performing the same |
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| Publication Number | Publication Date |
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| CN105206538A CN105206538A (en) | 2015-12-30 |
| CN105206538B true CN105206538B (en) | 2018-03-09 |
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| CN201410445854.0A Active CN105206538B (en) | 2014-06-12 | 2014-09-03 | Wafer scale transfer modling and its implementation |
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|---|---|
| KR (1) | KR101773236B1 (en) |
| CN (1) | CN105206538B (en) |
| DE (1) | DE102014109286B4 (en) |
| TW (1) | TWI601246B (en) |
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| KR102344896B1 (en) * | 2021-05-31 | 2021-12-30 | 씰테크 주식회사 | Method of forming underfill, method of manufacturing semiconductor package using the same, and release film for underfill process |
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| US3108339A (en) * | 1959-05-20 | 1963-10-29 | Harry R Bucy | Die casting mold breather |
| US5540576A (en) * | 1992-12-22 | 1996-07-30 | Toyoda Gosei Co., Ltd. | Apparatus having a vacuum chamber for producing moldings |
| US6245595B1 (en) * | 1999-07-22 | 2001-06-12 | National Semiconductor Corporation | Techniques for wafer level molding of underfill encapsulant |
| CN102005440A (en) * | 2009-08-26 | 2011-04-06 | 台湾积体电路制造股份有限公司 | Integrated circuit structure and forming method thereof |
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| JP2000040773A (en) * | 1998-07-23 | 2000-02-08 | Sony Corp | Resin-sealed semiconductor device and manufacture thereof |
| US6770236B2 (en) * | 2000-08-22 | 2004-08-03 | Apic Yamada Corp. | Method of resin molding |
| JP3859457B2 (en) * | 2001-03-27 | 2006-12-20 | 沖電気工業株式会社 | Manufacturing method of semiconductor device |
| JP2003243435A (en) * | 2002-02-14 | 2003-08-29 | Hitachi Ltd | Manufacturing method for semiconductor integrated circuit apparatus |
| DE102006017116B4 (en) * | 2006-04-10 | 2013-11-28 | Infineon Technologies Ag | Device and method for producing an article by means of molding technique, in particular by means of a transfer molding process |
| US7915089B2 (en) | 2007-04-10 | 2011-03-29 | Infineon Technologies Ag | Encapsulation method |
| US9601434B2 (en) * | 2010-12-10 | 2017-03-21 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming openings through insulating layer over encapsulant for enhanced adhesion of interconnect structure |
| JP5699735B2 (en) * | 2011-03-25 | 2015-04-15 | 日本電気株式会社 | Injection molding apparatus and injection molding method |
| US8951037B2 (en) * | 2012-03-02 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer-level underfill and over-molding |
-
2014
- 2014-07-02 DE DE102014109286.4A patent/DE102014109286B4/en active Active
- 2014-09-03 CN CN201410445854.0A patent/CN105206538B/en active Active
- 2014-12-26 KR KR1020140190970A patent/KR101773236B1/en active IP Right Grant
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108339A (en) * | 1959-05-20 | 1963-10-29 | Harry R Bucy | Die casting mold breather |
| US5540576A (en) * | 1992-12-22 | 1996-07-30 | Toyoda Gosei Co., Ltd. | Apparatus having a vacuum chamber for producing moldings |
| US6245595B1 (en) * | 1999-07-22 | 2001-06-12 | National Semiconductor Corporation | Techniques for wafer level molding of underfill encapsulant |
| CN102005440A (en) * | 2009-08-26 | 2011-04-06 | 台湾积体电路制造股份有限公司 | Integrated circuit structure and forming method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105206538A (en) | 2015-12-30 |
| DE102014109286A8 (en) | 2016-03-31 |
| TW201618248A (en) | 2016-05-16 |
| DE102014109286B4 (en) | 2019-01-10 |
| KR101773236B1 (en) | 2017-09-12 |
| DE102014109286A1 (en) | 2015-12-31 |
| KR20150143265A (en) | 2015-12-23 |
| TWI601246B (en) | 2017-10-01 |
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