CN105204112A - Wave-length and polarization hybrid multiplexer/demultiplexer on silicon chip - Google Patents
Wave-length and polarization hybrid multiplexer/demultiplexer on silicon chip Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/105—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type having optical polarisation effects
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Abstract
The invention discloses a wave-length and polarization hybrid multiplexer/demultiplexer on a silicon chip. The wave-length and polarization hybrid multiplexer/demultiplexer comprises a substrate, and multiple input waveguides, multiple output waveguides, a bus waveguide, multiple groove type micro rings and multiple hybrid plasma micro rings are arranged on the substrate; at the input end, each input waveguide multiplexes an input signal to the bus waveguide for conducting hybrid multiplex transmission through the corresponding groove type micro ring or the corresponding hybrid plasma micro ring; at the output end, the transmitted signal obtained after hybrid multiplex in the bus waveguide is demultiplexed to each output waveguide through the corresponding groove type micro ring or the corresponding hybrid plasma micro ring; the number of the groove type micro rings at the input end is the same as that of the groove type micro rings at the output end, and the number of the hybrid plasma micro rings at the input end is the same as that of the hybrid plasma micro rings at the output end. The hybrid multiplexer/demultiplexer has the advantages of being high in transmission efficiency, low in cross coupling and crosstalk, compact in structure, low in manufacturing difficulty, high in expandability of a constituted transmission system and the like.
Description
Technical field
The present invention relates to integrated optics technique field, be specifically related to wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip.
Background technology
In recent years, on sheet, the research in the gordian technique-integreted phontonics loop (PhotonicIntegratedCircuits, PICs) of light network achieves significant progress.PICs effectively can break through the function limitation of discrete component, by the photonic device of difference in functionality single-chip integration on same backing material, the processing capacity of chip and travelling speed are significantly improved, and power consumption reduces greatly, size reduces greatly, greatly can improve yield rate and the reliability of chip.In the process building PICs, silicon semiconductor material demonstrates many advantages, wherein the most outstanding advantage to adopt ripe standard CMOS process, to realize low cost, the mass production of silicon photonic device, and the monolithic hybrid integrated of silicon photonic device and silicon microelectronic component can be realized, thus develop extensive even ultra-large PICs.Build Large Copacity utilizing photonic device, with a large bandwidth and at a high rate and in low cost sheet during light network, all kinds of multiplex technique, as wavelength-division multiplex, palarization multiplexing, space division multiplexing etc. are key points wherein.For tackling the demand of light network on vast capacity on the horizon, ultra high bandwidth, high-speed chip, consider to adopt multiple multiplex technique imperative to realize mixing on chip multiplexing transmission simultaneously.
Recently, two kinds of novel waveguiding structure-groove waveguides and hybrid plasma waveguide are opened Xiang teach problem group respectively at 2004 and 2008 by Cornell University MichalLipson teach problem group and University of California Berkeley and are in succession proposed, and receive the extensive concern of researchist.Wherein groove waveguides is made up of the silica-based nanowire of two highs index of refraction distribution differences closely leaned on, middle formation nanometer groove, according to the boundary relation of electromagnetic field, on the interphase distributed perpendicular to high index-contrast, will there is uncontinuity and obviously strengthen in low-refraction groove in electric field component.Hybrid plasma waveguide introduces metal level in the outside of generic media waveguide and they separated by the low-index material that one deck is thin, the light patterns that this waveguiding structure makes it to carry, between generic media waveguide and metallic plasma waveguide, thus has the low loss characteristic of Medium Wave Guide and the strong mould field limitation capability of plasma filled waveguide simultaneously.Many photonic devices of these two kinds of waveguide design and manufacture are utilized to be in the news at present, as: full photomodulator, photoswitch, coupling mechanism, beam splitter, sensor.In addition, these two kinds of waveguides have and are obviously better than the polarization correlated by force of ordinary silicon base nano-wire, and make the coupling of pattern also have polarization selectivity, simultaneously in conjunction with micro-ring resonator, the hybrid multiplex that can realize wavelength and polarization on sheet transmits.And wherein the most key be the research of hybrid multiplex device and demodulation multiplexer, wavelength and polarization mixing multiplexing demultiplexing device on the silicon chip therefore designing high-performance, compact conformation, and then realize mixing on chip multiplexing transmission and seem very important.Also there is no the equipment that can realize mixing on chip multiplexing transmission at present.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip that can realize mixing on chip multiplexing transmission.
Technical scheme: wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip, comprise substrate, institute's substrate is provided with multiple input waveguide, multiple output waveguide, bus waveguide, the micro-ring of multiple slot type and the micro-ring of multiple hybrid plasma; At input end, each input waveguide carries out hybrid multiplex transmission by multiplexing for input signal to bus waveguide respectively by a micro-ring of slot type or the micro-ring of hybrid plasma; At output terminal, the signal transmitted after hybrid multiplex in bus waveguide is respectively through a micro-ring of slot type or hybrid plasma micro-ring demultiplexing extremely each output waveguide; Input end is identical with the quantity of the micro-ring of the slot type of output terminal, and input end is identical with the quantity of the micro-ring of the hybrid plasma of output terminal.
Further, the micro-ring of described slot type comprises two nano-rings closely leaned on; The micro-ring of described hybrid plasma comprises and is from bottom to top followed successively by dielectric ring, low-refraction ring type filling and metal cover ring.
Further, described bus waveguide is single bus waveguide.
Further, the spacing in the micro-ring of described slot type between two nano-rings is 80nm ~ 120nm.Polarization correlated and the wavelength selectivity of such structure is stronger.
Further, the dielectric ring in the micro-ring of described hybrid plasma is that silicon materials are made, and the thickness of dielectric ring is 220nm; Low-refraction ring type filling is that silicon dioxide or silicon nitride material are made, and the thickness of low-refraction ring type filling is 20nm ~ 50nm; Metal cover ring is that silver, aluminium or copper product are made, and the thickness of metal cover ring is 100nm ~ 200nm.The crosstalk each other in transmitting procedure of the multi-wavelength adopting such structure to transmit in bus waveguide, multi-polarization state signal is lower, also more weak from the cross-couplings of different micro-ring.
Further, the external radius of the micro-ring of described slot type is 3.0 μm ~ 3.5 μm, and the external radius of the micro-ring of hybrid plasma is 2.0 μm ~ 2.3 μm.
Beneficial effect: compared with prior art, technical scheme of the present invention has following beneficial effect:
1, wavelength and the multiplexing efficiency of polarization mixing is high, cross-couplings and crosstalk low.Relative to the common micro-ring resonator based on silicon nanowires design, the present invention has polarization correlated and the slot type of wavelength selectivity and the micro-ring resonator of hybrid plasma waveguide design more by force by using, the function of efficient hybrid multiplex and demultiplexing can be realized, make the mixed signal simultaneously transmitting multi-wavelength and multi-polarization state in bus waveguide, greatly can improve the transmission capacity of existing upper light network, bandwidth and speed.In addition, based on strong polarization correlated, different interchannel cross-couplings and crosstalk also will effectively reduce.
2, the adjustment of wavelength, conversion and aligning are convenient.Based on the thermo-optical coeffecient that silicon materials are larger, the resonance wavelength drift that mode by heated by electrodes regulates or compensate the scale error because of device manufacturing processes to bring, thus resonance wavelength is accurately aimed at the channel wavelength of wavelength-division multiplex in bus, improve the integral working of device.
3, the extensibility of transmission system is high.The micro-ring of each slot type or corresponding road wavelength and the polarization signal of the micro-ring of hybrid plasma in technical solution of the present invention, by upgrading and the dilatation of the quantity and feasible system that suitably increase micro-ring resonator, therefore extensibility is obviously better than existing multiplexing transmission mode.
4, flexible design, easy to use.Hybrid multiplex device in the present invention is similar with the principle of work of demodulation multiplexer, multiplexer carries out hybrid multiplex transmission by multiplexing for the input signal of multi-wavelength and multi-polarization state to bus waveguide, demodulation multiplexer is that the multiplexed signals in bus waveguide is outputted to different output ports respectively by different wavelength and polarization state, carries out the process of subsequent optical signal; In addition the structural symmetry of multiplexing demultiplexing device of the present invention, input and output port can put upside down use in actual use, and does not affect the performance of device, improves dirigibility and the convenience of device layout and use further.
5, compact conformation, processing and manufacturing are with low cost.The present invention adopts the silicon-on-insulator material with high index-contrast to make above-mentioned device, makes the overall package size of device less, is convenient to other device the extensive PIC photon integrated circuit of further integrated structure high-performance, multi-functional light network on sheet.The manufacture of this device is simultaneously compatible with the standard CMOS process of existing maturation completely, is beneficial to the low cost mass production realizing device.Based on these beneficial effects and advantage, this device particularly has potential using value in silicon based photon field at integrated photonics.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the cross-sectional view of silica-based slot type micro-ring resonator in the present invention;
Fig. 3 is the cross-sectional view of silica-based hybrid plasma micro-ring resonator in the present invention;
Fig. 4 be input in the present invention, the principal component mode distributions figure of output waveguide and bus waveguide structure transverse electric mode;
Fig. 5 be input in the present invention, the principal component mode distributions figure of output waveguide and bus waveguide structure transverse magnetic wave;
Fig. 6 is that middle slot of the present invention declines the principal component mode distributions figure of ring structure transverse electric mode;
Fig. 7 is that middle slot of the present invention declines the principal component mode distributions figure of ring structure transverse magnetic wave;
Fig. 8 is the principal component mode distributions figure of the micro-ring structure transverse electric mode of hybrid plasma in the present invention;
Fig. 9 is the principal component mode distributions figure of the micro-ring structure transverse electric mode of hybrid plasma in the present invention;
Figure 10 be in the present invention hybrid plasma micro-ring resonator at the transfer rate of straight-through output port of de-multiplex section and the variation relation of operation wavelength;
Figure 11 be in the present invention hybrid plasma micro-ring resonator at the transfer rate of lower road output port of de-multiplex section and the variation relation of operation wavelength.
In figure: input waveguide 1,2,3,4, output waveguide 5,6,7,8, bus waveguide 9, slot type micro-ring resonator 10,11,16,17, hybrid plasma micro-ring resonator 12,13,14,15, form slot type micro-ring resonator two nano-rings closely leaned on 101,102, form dielectric ring 121, low-refraction ring type filling 122, metal cover ring 123, substrate 18, the covering 19 of hybrid plasma micro-ring resonator.
Embodiment
Below in conjunction with accompanying drawing the present invention done and further explain.
As shown in Figure 1, Figure 2 and Figure 3, wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip, comprise substrate 18 and covering 19, substrate 18 is provided with four input waveguides, 1,2,3,4, four output waveguides 5,6,7,8, the micro-ring 12,13,14,15 of single bus waveguide 9, four micro-rings of slot type 10,11,16,17 and four hybrid plasmas; At input end, four input waveguides 1,2,3,4 carry out hybrid multiplex transmission by multiplexing for the input signal of multi-wavelength and multi-polarization state to bus waveguide 9 respectively by two micro-rings of slot type, 10,11 and two micro-rings of hybrid plasma 12,13; At output terminal, by the micro-ring 16,17 of two micro-rings of hybrid plasma, 14,15 and two slot types by the hybrid multiplex signal in bus waveguide 9 respectively demultiplexing to four output waveguide 8,7,6,5 export.Wherein, the quantity of the micro-ring of input waveguide, output waveguide, slot type and the micro-ring of hybrid plasma can increase according to demand, wherein, enter end identical with the number needs of the micro-ring of the slot type of output terminal, input end is identical with the number needs of the micro-ring of the hybrid plasma of output terminal.The transmission capacity of single bus waveguide can be improved by the quantity increasing corresponding input waveguide, output waveguide, the micro-ring of slot type and the micro-ring of hybrid plasma.Wherein, input waveguide, output waveguide and bus waveguide are silicon nanowires waveguide.
Wherein, four micro-rings 10,11,16,17 of slot type are made up of two nano-rings closely leaned on 101,102; Wherein, the spacing between nano-rings 101,102 is 80nm ~ 120nm, and the external radius of the micro-ring of slot type is 3.0m ~ 3.5m.Four hybrid plasma micro-ring 12,13,14,15 structures are from bottom to top followed successively by dielectric ring 121, low-refraction ring type filling 122 and metal cover ring 123; Wherein, dielectric ring is that silicon materials are made, and the thickness of dielectric ring is 220nm; Low-refraction ring type filling is that silicon dioxide or silicon nitride material are made, and the thickness of low-refraction ring type filling is 20nm ~ 50nm; Metal cover ring is that silver, aluminium or copper product are made, and the thickness of metal cover ring is 100nm ~ 200nm, the external radius of the micro-ring of hybrid plasma is 2.0m ~ 2.3m.
At input end, the transverse electric mode in input signal and transverse magnetic wave are respectively by the micro-ring of hybrid plasma 12,13 and the micro-ring of slot type 10,11 multiplexing to bus waveguide 9; At output terminal, the transverse electric mode in bus waveguide 9 and transverse magnetic wave are also respectively by the micro-ring of hybrid plasma 14,15 and the micro-ring of slot type 16,17 demultiplexing extremely each output waveguide.
The process of the transmission in hybrid multiplex/demodulation multiplexer that light signal provides at the present embodiment is: the incident optical signal comprising multi-wavelength transverse electric mode (hereinafter referred to as TE) enters from input waveguide 3,4, the incident optical signal comprising multi-wavelength transverse magnetic wave (hereinafter referred to as TM) enters from input waveguide 1,2, and then TE and TM mould input signal is coupled into bus waveguide 9 respectively by hybrid plasma micro-ring resonator 12,13 and slot type micro-ring resonator 10,11 resonance and carries out hybrid multiplex transmission.Because the TE mould of the micro-ring of hybrid plasma is similar with the TE mould of bus waveguide to the input waveguide of its both sides, the TE mould therefore inputted can be coupled into micro-ring efficiently and resonance characteristic by the micro-ring of hybrid plasma carries out multiplexing transmission at its resonance wave strong point bus waveguide 9 of setting out on a journey; But the TM mould of input differs comparatively greatly because of the TM mould of the micro-ring of its pattern and hybrid plasma, Gu not by the micro-loop coupling of this hybrid plasma to bus waveguide 9.For this reason, the TM mould of input needs to be coupled to bus waveguide 9 by slot type micro-ring resonator 10,11 resonance, because the TM mould of the micro-ring of slot type is similar with the TM mould of the silicon nanowires waveguide of its both sides, is easy to realize resonance coupling.At demultiplexing end, the multi-wavelength in bus waveguide 9 and multi-polarization state hybrid multiplex signal export TE and the TM mould signal of respective wavelength to output waveguide 8,7 and 6,5 respectively by the hybrid plasma micro-ring resonator 14,15 of demultiplexing and slot type micro-ring resonator 16,17.The hybrid multiplex transmission of multi-wavelength and multi-polarization state can be realized in this way in single bus waveguide, effectively can improve the capacity of transmission system, bandwidth sum speed, also can reduce the size of transmission system on sheet, power consumption, complicacy and manufacturing cost, will be the trend of light network development on sheet simultaneously.
Above-mentioned hybrid multiplex/demultiplexing device is adopted and carries out Design and manufacture with the material of existing CMOS technology compatibility, first the buried silicon dioxide layer that a layer thickness is about 3 μm is oxidized on a silicon substrate, then be about the silicon of 220nm by plasma reinforced chemical vapour deposition (PECVD) a layer thickness, or directly on business silicon chip, carry out the making of practical devices.Utilizing beamwriter lithography directly to be write by the pattern of device scribbles on the silicon chip of photoresist, then carries out reactive ion etching (RIE), the pattern in photoresist to be write further in silicon chip and cleaning silicon chip repeatedly to remove unnecessary photoresist.Due to the micro-ring of hybrid plasma, waveguiding structure is different in vertical direction; therefore single photoetching process cannot produce whole device; need multistep photoetching or alignment; thus form low-refraction ring type filling (as: silicon dioxide) and the metal cover ring (as copper, aluminium, silver etc.) of the micro-ring of hybrid plasma successively; finally cover layer of silicon dioxide protective seam in the outside of device, the planarization that wherein growth of film adopts PECVD, etching adopts RIE, device surface adopts chemically mechanical polishing (CMP).
As shown in Fig. 4, Fig. 5, transverse electric mode is mainly distributed in the sandwich layer of waveguide, and transition (transition is relevant with the boundary values of electromagnetic field) appears in core bag interphase place in the horizontal direction; Restricted a little less than transverse electric mode by waveguide of transverse magnetic wave, the thickness mainly due to waveguide is less than the width of waveguide, and transition has also appearred in core bag interphase place in vertical direction in addition.As shown in Fig. 6, Fig. 7, wherein transverse electric mode be limited in greatly two nano wires closely leaned in the nanometer groove that forms, having there is larger change in pattern, can realize the sub-micron even light field of nanometer scale and focus on and restriction ability; Transverse magnetic wave is then little with corresponding input, output waveguide difference, therefore in slot type micro-ring resonator, according to coupled modes and resonance coupled wave theory, only have the transverse magnetic wave of input could produce with the micro-ring of slot type and be coupled efficiently, and carry out the output of up/down road in resonance wave strong point.As shown in Figure 8, Figure 9, transverse electric mode is mainly distributed in the Medium Wave Guide of bottom, by top metal tectal affect less, make it closely similar with the transverse electric mode of input, output waveguide, therefore in hybrid plasma micro-ring resonator, the transverse electric mode of input can produce with the micro-ring of hybrid plasma and be coupled efficiently, and exports in resonance wave strong point; And transverse magnetic wave is because being subject to the impact of top metal overlayer and low-refraction packed layer, its mould field energy integrated distribution is in the packed layer of low-refraction, differ greatly with corresponding input, output medium waveguide, the conversion of mould field both therefore cannot being realized by waveguide-coupled.Based on the polarization selectivity that this two kinds of special waveguide structure are strong, the transverse electric mode of input (transverse magnetic wave) is only had just to be coupled to bus waveguide to carry out hybrid multiplex transmission by the micro-ring of hybrid plasma (the micro-ring of slot type) resonance, or from bus waveguide by multiplexed signals demultiplexing to each output waveguide, thus effectively can reduce different interchannel cross-couplings and crosstalk, the device performance obtained is better than the micro-ring structure using common nano wire to form.
As shown in Figure 10, Figure 11, TE mould creates obvious resonance phenomena, and TM mould fails because waveguide mode differs greatly to produce the coupling of effective resonance.Calculate in wavelength coverage (1.5 μm ~ 1.6 μm) in diagram, there are three resonance wavelengths in TE mould, one of them is positioned at the best effort window of optical communication just, i.e. 1550nm wavelength place, in addition corresponding free spectral range is also comparatively large, close to 40nm.For the resonance wavelength of TE mould
c, according to phase relation, the following relational expression of demand fulfillment:
In formula (1), L is the girth of the micro-ring of hybrid plasma, n
efffor the effective refractive index of its pattern, m is any positive integer, if for a certain fixing resonance wavelength, m is larger, and corresponding micro-ring size is also very large.In addition similar transfer rate and the variation relation of operation wavelength is also had for the slot type micro-ring resonator in demodulation multiplexer, difference is to only have TM mould could produce obvious resonance coupling phenomenon, TE mould does not mate because of pattern can not produce effective coupling, at lower road port, resonance be exported TM mould accordingly.In the multiplexer of input end hybrid plasma micro-ring resonator and slot type micro-ring resonator respectively in order to multiplexing TE and TM mould to bus waveguide, their transfer rate and the variation relation of operation wavelength also have similar resonance characteristic.For wavelength on silicon chip and polarization mixing multiplex transmission system, the multiplexer of input end and their function of the demodulation multiplexer of output terminal are contrary, but the design of concrete device is similar or identical, only because light signal transmission direction is wherein different, and then create different laser propagation effects.In addition, based on strong polarization correlated, the crosstalk each other in transmitting procedure of the multi-wavelength transmitted in bus waveguide, multi-polarization state signal is lower, also more weak from the cross-couplings of different micro-ring, therefore, the system transfers efficiency obtained is higher, if rationally add the quantity of corresponding micro-ring resonator, transmission capacity will increase further, and this provides convenience for optical interconnection system upgrading in the future and dilatation, demonstrates the superiority of technology provided by the present invention greatly.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. wavelength and a polarization mixing multiplexing demultiplexing device on silicon chip, comprises substrate, it is characterized in that: on institute's substrate, be provided with multiple input waveguide, multiple output waveguide, bus waveguide, the micro-ring of multiple slot type and the micro-ring of multiple hybrid plasma; At input end, each input waveguide carries out hybrid multiplex transmission by multiplexing for input signal to bus waveguide respectively by a micro-ring of slot type or the micro-ring of hybrid plasma; At output terminal, the signal transmitted after hybrid multiplex in bus waveguide is respectively through a micro-ring of slot type or hybrid plasma micro-ring demultiplexing extremely each output waveguide; Input end is identical with the quantity of the micro-ring of the slot type of output terminal, and input end is identical with the quantity of the micro-ring of the hybrid plasma of output terminal.
2. wavelength and polarization mixing multiplexing demultiplexing device on silicon chip according to claim 1, is characterized in that: the micro-ring of described slot type comprises two nano-rings closely leaned on; The micro-ring of described hybrid plasma comprises dielectric ring, low-refraction ring type filling and metal cover ring from bottom to top.
3. wavelength and polarization mixing multiplexing demultiplexing device on silicon chip according to claim 1, is characterized in that: described bus waveguide is single bus waveguide.
4. wavelength and polarization mixing multiplexing demultiplexing device on silicon chip according to claim 2, is characterized in that: the spacing in the micro-ring of described slot type between two nano-rings is 80nm ~ 120nm.
5. wavelength and polarization mixing multiplexing demultiplexing device on silicon chip according to claim 2, is characterized in that: the dielectric ring in the micro-ring of described hybrid plasma is that silicon materials are made, and the thickness of dielectric ring is 220nm; Low-refraction ring type filling is that silicon dioxide or silicon nitride material are made, and the thickness of low-refraction ring type filling is 20nm ~ 50nm; Metal cover ring is that silver, aluminium or copper product are made, and the thickness of metal cover ring is 100nm ~ 200nm.
6. wavelength and polarization mixing multiplexing demultiplexing device on silicon chip according to claim 1, is characterized in that: the external radius of the micro-ring of described slot type is 3.0 μm ~ 3.5 μm, and the external radius of the micro-ring of hybrid plasma is 2.0 μm ~ 2.3 μm.
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