CN105200510B - A kind of method that nanometer porous film layer is formed in surface of pure aluminum by electrochemical polish - Google Patents
A kind of method that nanometer porous film layer is formed in surface of pure aluminum by electrochemical polish Download PDFInfo
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- CN105200510B CN105200510B CN201510747402.2A CN201510747402A CN105200510B CN 105200510 B CN105200510 B CN 105200510B CN 201510747402 A CN201510747402 A CN 201510747402A CN 105200510 B CN105200510 B CN 105200510B
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- electrochemical polish
- pure aluminum
- film layer
- porous film
- nanometer porous
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004411 aluminium Substances 0.000 claims abstract description 23
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims abstract description 23
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical class CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000013772 propylene glycol Nutrition 0.000 claims abstract description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000001488 sodium phosphate Substances 0.000 claims description 3
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 2
- 230000005518 electrochemistry Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 12
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005868 electrolysis reaction Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 235000011008 sodium phosphates Nutrition 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/18—Polishing of light metals
- C25F3/20—Polishing of light metals of aluminium
Abstract
The invention discloses a kind of method for forming nanometer porous film layer in surface of pure aluminum, have steps of：1. surface of pure aluminum is pre-processed；2. using step, 1. pretreated fine aluminium is put into electrochemical polish solution as anode and together with the platinum electrode as negative electrode, and makes negative and positive die opening be 50mm~70mm, then at ambient temperature, in 80mA/cm2~160mA/cm2Current density under carry out electrochemical polish 10s~90s, so as in surface of pure aluminum form nanometer porous film layer；Described electrochemical polish solution is made up of 1,2 propane diols and perchloric acid according to 9: 1~2: 1 volume ratio；3. the fine aluminium after step 2. electrochemical polish is cleaned and dried.The present invention by electrochemical polish forms nanometer porous film layer in surface of pure aluminum, substantially reduces the production cycle of porous anodic alumina films, and resulting nanometer porous film layer also have the advantages that scope greatly, high-sequential.
Description
The application be Application No. 201310186651.X, the applying date be that May 17, invention and created name in 2013 are
The divisional application of the application for a patent for invention of " in the method that surface of pure aluminum forms nanometer porous film layer ".
Technical field
The invention belongs to field of metal surface treatment technology, and in particular to one kind forms nanometer porous film in surface of pure aluminum
The method of layer.
Background technology
Aluminium is the active metal of comparison, in atmosphere can about hundreds of nanometers of the thickness of self-assembling formation one oxide-film, this layer of oxygen
It is amorphous to change film, and thin porous, mechanical strength is low, can not meet the requirement of functionalized application.
In order to obtain the oxidation film layer of specific function, it is necessary to aluminium surface is handled, typically in the electrolytic solution, by aluminium
Electrolysis processing is carried out as anode, so as to obtain oxide-film in aluminium surface.According to the difference of electrolyte, densification can be respectively obtained
（Or stop）Anodic alumina films and porous anodic alumina films.
It is fine and close（Or stop）Anodic alumina films carry out anodic oxidation to aluminium in neutral electrolyte and obtained, and it is one
Kind is fine and close, unformed, pellumina in uniform thickness, and this pellumina has good dielectric properties, can be used as aluminium
The anode foils of electrolytic capacitor.
Porous anodic alumina films are then the acidic electrolysises for itself having certain oxidability in oxalic acid, phosphoric acid, sulfuric acid etc.
What anodic oxidation obtained is carried out to aluminium in liquid, it is formed by one layer close to the barrier layer of metal and outer layer Woelm Alumina, in six
Square solid matter periodic structure, porous anodic alumina films are mainly used in filter membrane and prepare the template of nano material.
At present, the preparation of porous anodic alumina films is first carried out mainly using two step anodizings to aluminium
Pretreatment, is then aoxidized, oxidization time is usually 1h~3h, is then removed by chemical attack first in acidic electrolysis bath
Going to aoxidize caused oxide-film first, finally carry out secondary oxidation in acidic electrolysis bath again, oxidization time is usually 2h~5h,
Obtain porous anodic alumina films.
Wherein pretreatment mainly includes cleaning and electrochemical polish, and the main function of electrochemical polish is that acquisition is more smooth
Surface, so as to obtain size and the porous array film more uniformly spread after being advantageous to anodic oxidation.Electrochemical polish uses
Solution be made up of absolute ethyl alcohol and perchloric acid according to certain volume ratio, as Chinese patent literature CN1609283A,
CN101007645A, CN101139730A etc..
At present, also have and the document report of self-organizing structures, such as Chinese patent are formed in metal surface using electrochemical polish
Document CN101294298A discloses a kind of electrochemical polishing method of rafifinal under ultrasonic agitation, and this method can be in aluminium
Surface forms the self-organizing structures of nanoscale striated.The electropolishing solution that this method uses is by absolute ethyl alcohol and perchloric acid group
Into current density 25mA/cm2~35mA/cm2.But the electrochemical polishing method obtain be nanoscale striated self-organizing
Structure, and from the point of view of the growth mechanism of porous anodic alumina films, although hole, serious shadow can also be formed along stripe direction
Ring hole density and order.
In addition, other methods of nanometer porous film layer, such as photoetching process, electron beam lithography are formed in metal surface,
Then due to complex process, involve great expense, typically also can not commercial Application.
The content of the invention
It is an object of the invention to solve the above problems, there is provided a kind of to form nanometer in surface of pure aluminum by electrochemical polish
The method of level porous membrane layer.
Realizing the technical scheme of the object of the invention is：A kind of method for forming nanometer porous film layer in surface of pure aluminum, tool
There are following steps：1. surface of pure aluminum is pre-processed；2. using step 1. pretreated fine aluminium as anode and with as the moon
The platinum electrode of pole is put into electrochemical polish solution together, and makes negative and positive die opening be 50mm~70mm, then in environment temperature
Under（0 DEG C~40 DEG C, similarly hereinafter）, in 80mA/cm2~160mA/cm2Current density under carry out electrochemical polish 10s~90s, from
And form nanometer porous film layer in surface of pure aluminum；Described electrochemical polish solution is by 1,2- propane diols and perchloric acid according to 9:
1~2: 1 volume ratio composition；3. the fine aluminium after step 2. electrochemical polish is cleaned and dried.
Above-mentioned steps 2. described in electrochemical polish solution preferably by 1,2- propane diols and perchloric acid according to 6: 1~4: 1
Volume ratio composition.
Above-mentioned steps 2. described in the preferred 120mA/cm of current density2~140mA/cm2。
Above-mentioned steps 2. described in the preferred 60mm of negative and positive die opening.
Above-mentioned steps 1. described in surface of pure aluminum carry out pretreatment be that the fine aluminium after washing is placed in 60 DEG C~80 DEG C
Aqueous slkali in 30s~60s, take out and wash, then be placed in dilute nitric acid solution dipping 30s~50s, take out and wash.
Described aqueous slkali is the aqueous solution of every liter of sodium phosphate containing 1g~10g and 5g~40g sodium hydroxide.Described dilute nitre
The percent by volume of acid solution is 10%~30%.
Above-mentioned steps 3. described in cleaning be with deionized water be cleaned by ultrasonic 5min~10min；Described drying is heat
Wind is dried.
The electrochemical polish method of the present invention same volume than electrochemical polish solution in, with the increase of current density,
The porosity of the nanometer porous film layer formed also increases therewith with average pore size.
The good effect that the present invention has：（1）The present invention is by selecting suitable electrochemical polish solution and suitable
Electrochemical polish condition, so as to the nanometer porous film layer formed in surface of pure aluminum, equivalent in two step anodizings
Oxidation first, but first oxidization time of the 10s~90s electrochemical polish time compared to 1h~5h substantially reduce more
The production cycle of hole anodic alumina films.（2）The nanometer porous film layer that the method for the present invention obtains also has scope greatly, highly
The advantages that orderly, so as to obtain the porous anodic alumina films of high-sequential by two-step anodization.
Brief description of the drawings
Fig. 1 is the scanning electron microscope (SEM) photograph for the surface of pure aluminum that embodiment 1 obtains.
Embodiment
（Embodiment 1）
The method that nanometer porous film layer is formed in surface of pure aluminum of the present embodiment has steps of：
1. surface of pure aluminum is pre-processed：
First, fine aluminium is washed with clear water, so as to remove the dust of surface of pure aluminum and dirt.
Then, the fine aluminium after clear water is washed is placed in 30s in 60 DEG C of aqueous slkali, so as to remove natural thin of surface of pure aluminum
Oxide skin(coating), the aqueous slkali are every liter of aqueous solution containing 8g sodium phosphates and 25g sodium hydroxides.
Then, fine aluminium is taken out and washed again with clear water, be placed in soaking in the dilute nitric acid solution that percent by volume is 20%
Stain 30s.
Finally, fine aluminium is taken out and washed with clear water.
2. using step, 1. pretreated fine aluminium is put into electrochemistry throwing as anode and together with the platinum electrode as negative electrode
In light solution, and negative and positive die opening is set to be 60mm, then at ambient temperature（The present embodiment is 10 DEG C）, in 120mA/cm2's
Electrochemical polish 60s is carried out under current density, so as to form nanometer porous film layer in surface of pure aluminum；
Above-mentioned electrochemical polish solution is made up of 1,2- propane diols and perchloric acid according to 4: 1 volume ratio.
3. 10min, then hot-air seasoning are cleaned by ultrasonic with deionized water to the fine aluminium after step 2. electrochemical polish.
The scanning electron microscope (SEM) photograph of the surface of pure aluminum obtained by the method for the present embodiment is shown in Fig. 1, is formed as seen from Figure 1
The porosity of porous membrane layer reaches 12.3%, and average pore size is up to 19.18nm.
（2~embodiment of embodiment 5）
The method of each embodiment is substantially the same manner as Example 1, and difference is shown in Table 1.
Table 1
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | |
| Electrochemical polish solution | 1,2- propane diols: perchloric acid 4: 1 | 1,2- propane diols: perchloric acid 5: 1 | 1,2- propane diols: perchloric acid 6: 1 | 1,2- propane diols: perchloric acid 2: 1 | 1,2- propane diols: perchloric acid 9: 1 |
| Negative and positive die opening | 60mm | 60mm | 60mm | 70mm | 50mm |
| Current density | 120mA/cm2 | 150mA/cm2 | 100mA/cm2 | 160mA/cm2 | 80mA/cm2 |
| Electrochemical polish temperature | 10℃ | 5℃ | 0℃ | 30℃ | 40℃ |
| The electrochemical polish time | 60s | 50s | 40s | 90s | 10s |
| It is cleaned by ultrasonic the time | 10min | 10min | 5min | 7min | 8min |
Claims (1)
- A kind of 1. method that nanometer porous film layer is formed in surface of pure aluminum by electrochemical polish, it is characterised in that have following Step：1. the fine aluminium after washing is placed in into 30s~60s in 60 DEG C~80 DEG C of aqueous slkali, takes out and wash, then be placed in dust technology 30s~50s is impregnated in solution, takes out and washes；Described aqueous slkali is every liter of sodium phosphate and 5g containing 1g~10g The aqueous solution of~40g sodium hydroxide；The percent by volume of described dilute nitric acid solution is 10%~30%；2. using step, 1. to be put into as anode and together with the platinum electrode as negative electrode electrochemical polish molten for pretreated fine aluminium In liquid, and negative and positive die opening is set to be 60mm, then at a temperature of 0 DEG C~40 DEG C, in 120mA/cm2~140mA/cm2Electric current Electrochemical polish 10s~90s is carried out under density, so as to form nanometer porous film layer in surface of pure aluminum；Described electrochemistry is thrown Light solution is made up of 1,2- propane diols and perchloric acid according to 6: 1~4: 1 volume ratio；3. the fine aluminium after step 2. electrochemical polish is cleaned and dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510747402.2A CN105200510B (en) | 2013-05-17 | 2013-05-17 | A kind of method that nanometer porous film layer is formed in surface of pure aluminum by electrochemical polish |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510747402.2A CN105200510B (en) | 2013-05-17 | 2013-05-17 | A kind of method that nanometer porous film layer is formed in surface of pure aluminum by electrochemical polish |
| CN201310186651.XA CN103276438B (en) | 2013-05-17 | 2013-05-17 | The method of nanometer porous rete is formed at surface of pure aluminum |
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| CN201310186651.XA Division CN103276438B (en) | 2013-05-17 | 2013-05-17 | The method of nanometer porous rete is formed at surface of pure aluminum |
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| CN105200510B true CN105200510B (en) | 2017-11-21 |
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| CN201510752337.2A Active CN105220217B (en) | 2013-05-17 | 2013-05-17 | The method that nanometer porous film layer is formed in surface of pure aluminum by electrochemical polish |
| CN201510746725.XA Active CN105369338B (en) | 2013-05-17 | 2013-05-17 | A kind of method for forming nanometer porous film layer in surface of pure aluminum |
| CN201310186651.XA Active CN103276438B (en) | 2013-05-17 | 2013-05-17 | The method of nanometer porous rete is formed at surface of pure aluminum |
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| CN201510746725.XA Active CN105369338B (en) | 2013-05-17 | 2013-05-17 | A kind of method for forming nanometer porous film layer in surface of pure aluminum |
| CN201310186651.XA Active CN103276438B (en) | 2013-05-17 | 2013-05-17 | The method of nanometer porous rete is formed at surface of pure aluminum |
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| CN105200510B (en) * | 2013-05-17 | 2017-11-21 | 江苏理工学院 | A kind of method that nanometer porous film layer is formed in surface of pure aluminum by electrochemical polish |
| CN113161685A (en) * | 2021-03-23 | 2021-07-23 | 河北金力新能源科技股份有限公司 | Porous ceramic diaphragm and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101294298A (en) * | 2008-01-17 | 2008-10-29 | 大连理工大学 | Electrochemical polishing method for high purity aluminum under ultrasonic agitation |
| CN101935863A (en) * | 2009-06-30 | 2011-01-05 | 比亚迪股份有限公司 | Aluminum alloy electrolytic polishing solution, preparation method and aluminum alloy electrolytic polishing method |
| CN105220217A (en) * | 2013-05-17 | 2016-01-06 | 江苏理工学院 | Formed the method for nanometer porous rete at surface of pure aluminum by electrochemical etching |
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| GB1226042A (en) * | 1968-11-05 | 1971-03-24 | ||
| JPS63317699A (en) * | 1987-06-18 | 1988-12-26 | Brother Ind Ltd | Pretreatment of metallic plating |
| US5993638A (en) * | 1997-05-23 | 1999-11-30 | Sandvik Ab | Method for obtaining well-defined edge radii on cutting tool inserts in combination with a high surface finish over the whole insert by electropolishing technique |
| JP2003183899A (en) * | 2001-12-19 | 2003-07-03 | Fujikura Ltd | Surface finishing method for aluminum or aluminum alloy material |
| CN1325698C (en) * | 2003-10-21 | 2007-07-11 | 东莞理工学院 | Process for producing ordered porous anodic alumina form |
| CN1995480B (en) * | 2006-12-18 | 2011-06-15 | 天津理工大学 | Preparation process for obtaining highly ordered alumina mold |
| CN100582325C (en) * | 2007-07-23 | 2010-01-20 | 华东师范大学 | Process for producing cadmium sulfide quantum wire |
| US20090214848A1 (en) * | 2007-10-04 | 2009-08-27 | Purdue Research Foundation | Fabrication of nanowire array composites for thermoelectric power generators and microcoolers |
| CN101183053B (en) * | 2007-12-04 | 2010-08-11 | 北京有色金属研究总院 | Preparation method of high fine aluminium-copper series alloy metallographical example |
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- 2013-05-17 CN CN201510747402.2A patent/CN105200510B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101294298A (en) * | 2008-01-17 | 2008-10-29 | 大连理工大学 | Electrochemical polishing method for high purity aluminum under ultrasonic agitation |
| CN101935863A (en) * | 2009-06-30 | 2011-01-05 | 比亚迪股份有限公司 | Aluminum alloy electrolytic polishing solution, preparation method and aluminum alloy electrolytic polishing method |
| CN105220217A (en) * | 2013-05-17 | 2016-01-06 | 江苏理工学院 | Formed the method for nanometer porous rete at surface of pure aluminum by electrochemical etching |
Non-Patent Citations (2)
| Title |
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| "Electropolishing of high-purity aluminium in perchloric acid and ethanol solutions";Di Ma等;《Corrosion Science》;20090430;第51卷(第4期);第713-718页 * |
| "多孔阳极氧化铝膜的电化学表征及动力学研究";马迪;《中国博士学位论文全文数据库 工程科技I辑》;20101015(第2010-10期);B020-93页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105200510A (en) | 2015-12-30 |
| CN105369338B (en) | 2017-06-16 |
| CN105220217A (en) | 2016-01-06 |
| CN105369338A (en) | 2016-03-02 |
| CN105220217B (en) | 2017-07-11 |
| CN103276438B (en) | 2016-04-13 |
| CN103276438A (en) | 2013-09-04 |
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