CN105185827A - 一种AlGaN/GaN高电子迁移率功率半导体器件 - Google Patents
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Abstract
一种AlGaN/GaN高电子迁移率功率半导体器件,包括:Si基衬底,在Si基衬底上形成有AlN成核层,在AlN成核层上形成有本征GaN层,在本征GaN层上形成有AlGaN掺杂层,在AlGaN掺杂层中形成有栅氧化层,所述栅氧化层贯穿AlGaN掺杂层且始于AlGaN掺杂层的下表面并止于AlGaN掺杂层的上表面,在栅氧化层的上表面形成有栅极,在AlGaN掺杂层的上表面栅极的一侧形成有源极,在AlGaN掺杂层的上表面栅极的另一侧形成有漏极,在栅极、源极和漏极上形成有钝化层,且源极和漏极通过钝化层与栅极相隔离,其特征在于,在AlGaN掺杂层的内部设有绝缘层且绝缘层的上表面裸露于AlGaN掺杂层的上表面,所述绝缘层与栅氧化层相接触且位于所述栅氧化层与漏极之间,这种结构的优点在于能够有效提高器件的击穿电压。
Description
技术领域
本发明主要涉及一种宽禁带功率半导体器件,特别是涉及一种应用于电力开关领域的高压增强型高电子迁移率晶体管。
背景技术
GaN材料具有良好的电学特性,如宽的禁带宽度、高击穿电场、高热导率、耐腐蚀等,被誉为是继第一代Ge、Si半导体材料、第二代GaAs、InP化合物半导体材料之后的第三代半导体材料,是制作高频、高压、高温、大功率电子器件和短波长、大功率光电子器件的理想材料。
AlGaN/GaN高电子迁移率器件由于压电极化和自发极化效应,在AlGaN/GaN界面的GaN层中出现了浓度很高的二维电子气(2DEG),因此AlGaN/GaN高电子迁移率器件具有击穿电压高、电子漂移速度快和抗辐射能力强等优势,使其在高频高温大功率领域具有十分广泛的应用前景。沟道处2DEG高的迁移率使得它具有超高功率密度和低功耗特性。在此之前,对于AlGaN/GaN高电子迁移率器件的研究一直集中在微波器件领域,耐压多在200V以下。近几年随着大尺寸Si基制作GaN器件成为可能之后,AlGaN/GaN高电子迁移率器件在中高压功率器件领域的研究又成为了一个热点。
AlGaN/GaN高电子迁移率器件作为横向器件,在截止状态下,沟道耗尽区内的正电荷发出的电力线集中指向栅极边缘,在栅极靠近漏端一侧形成电场峰值是制约器件击穿电压提高的主要原因之一。过大的峰值电场使器件电场峰值分布不均,器件容易在较低源漏电压下被击穿,无法充分发挥GaN材料的高耐压优势。为了提高AlGaN/GaN高电子迁移率器件的击穿电压,最常采用的方法是引入场板结构,如栅场板、源场板等,场板的采用可以在场板的边缘引入另一个电场峰值,使得栅漏之间的电场得到重新分布,降低了近漏端栅极边缘的电场峰值,大大提高了击穿电压。然而,场板的加入会增加器件寄生电容的大小,使得器件的高频特性受抑制。
发明内容
本发明针对上述问题,提出了一种AlGaN/GaN高电子迁移率功率半导体器件,该结构在保持器件导通特性和频率特性基本不变的基础上,能够有效提高击穿电压。
本发明采用如下技术方案:一种AlGaN/GaN高电子迁移率功率半导体器件,包括:Si基衬底,在Si基衬底上形成有AlN成核层,在AlN成核层上形成有本征GaN层,在本征GaN层上形成有AlGaN掺杂层,在AlGaN掺杂层中形成有栅氧化层,所述栅氧化层贯穿AlGaN掺杂层且始于AlGaN掺杂层的下表面并止于AlGaN掺杂层的上表面,在栅氧化层的上表面形成有栅极,在AlGaN掺杂层的上表面栅极的一侧形成有源极,在AlGaN掺杂层的上表面栅极的另一侧形成有漏极,在栅极、源极和漏极上形成有钝化层,且源极和漏极通过钝化层与栅极相隔离,其特征在于,在AlGaN掺杂层的内部设有绝缘层且绝缘层的上表面裸露于AlGaN掺杂层的上表面,所述绝缘层与栅氧化层相接触且位于所述栅氧化层与漏极之间。
与现有技术相比,本发明具有如下优点:
(1)、本发明器件采用绝缘层10沿着栅宽方向均匀间隔分布的结构,通过改变部分栅漏之间二维电子气的浓度,在不显著影响器件导通特性的基础上,使得整个器件电场分布更加均匀,击穿电压得到提高。
AlGaN/GaN高电子迁移率器件由于强烈的极化效应,会在AlGaN/GaN界面靠近GaN一侧形成高浓度的二维电子气。实验发现,减小AlGaN势垒层的厚度,可以使得极化效应减弱,二维电子气的浓度降低。因此本发明通过刻蚀AlGaN,在近漏端的栅氧化层一侧形成绝缘层结构,因为绝缘层的引入,使得其下方对应的AlGaN势垒层厚度减薄,因此该区域的二维电子气浓度减小,栅漏之间形成类似MOSFET中的LDD(LightlyDopedDrain)结构。由于沟道中二维电子气浓度的阶梯分布,这时在绝缘层靠近漏极的边缘就会出现一个新的电场峰值,因此栅漏之间的电场分布得到调整,从而击穿电压得到提高。然而,若是绝缘层10沿着器件栅宽方向无间隙分布,则器件的导通特性会因绝缘层下方沟道中的二维电子气浓度减小而受到影响。为了减小由于绝缘层10的引入而导致的器件导通特性变坏,将绝缘层10沿着栅宽方向均匀间隔分布,此时没有引入绝缘层10下方的二维电子气浓度并不会减小,其导通特性也不会受到影响。图5为本发明器件a-a’和b-b’两个地方所对应沟道处的二维电子气浓度分布图,可以发现在有绝缘层10的地方,二维电子气浓度沿着栅漏方向是阶梯式递增的,而在没有绝缘层10地方,二维电子气浓度沿着栅漏方向是均匀分布的。图6为本发明器件与常规器件的击穿电压对比曲线图,可以发现本发明器件与常规器件相比,击穿电压得到了提高。
(2)、本发明器件的好处在于绝缘层10的存在还在一定程度上减小了栅极漏电流。由于绝缘层10的引入,栅极近漏端峰值电场处的绝缘层加厚了,使得栅极漏电流得到了减小。
(3)、本发明器件的好处在于提高了器件的击穿电压,减小了栅极漏电流的基础上,导通特性基本保持不变。图7为本发明器件与常规器件的导通特性对比图,可以发现本发明器件与常规器件相比,器件的导通特性基本保持不变。
(4)、本发明器件的好处在于提高了器件的击穿电压,减小了栅极漏电流的基础上,器件的频率特性基本保持不变。绝缘层10结构和传统的场板结构相比,前者通过在器件内部做结构调整,改变器件内部的电场分布,并没有引入额外的寄生电容,因此寄生电容基本保持不变,保证了器件的频率特性不受影响。
附图说明
图1是常规的AlGaN/GaN高电子迁移率功率半导体器件结构剖面图。
图2是本发明的AlGaN/GaN高电子迁移率功率半导体器件结构剖面图。
图3是本发明的AlGaN/GaN高电子迁移率功率半导体器件去钝化层后的结构剖面图。
图4是本发明的AlGaN/GaN高电子迁移率功率半导体器件去钝化层和金属层后的结构剖面图。
图5是本发明器件a-a’和b-b’所对应沟道处的二维电子气浓度分布曲线图。可以看出本发明器件使得栅漏间二维电子气沿着栅漏方向呈阶梯式增长。
图6是本发明器件与常规器件的击穿电压比较图。可以看出本发明器件使得击穿电压得到了明显的提高。
图7是本发明器件与常规器件的导通特性比较图。可以看出本发明器件与常规器件相比,导通特性基本保持不变。
具体实施方式
下面结合图2和图3详细说明,一种AlGaN/GaN高电子迁移率功率半导体器件,包括:Si基衬底1,在Si基衬底1上形成有AlN成核层2,在AlN成核层2上形成有本征GaN层3,在本征GaN层3上形成有AlGaN掺杂层4,在AlGaN掺杂层4中形成有栅氧化层5,所述栅氧化层5贯穿AlGaN掺杂层4且始于AlGaN掺杂层4的下表面并止于AlGaN掺杂层4的上表面,在栅氧化层5的上表面形成有栅极6,在AlGaN掺杂层4的上表面栅极6的一侧形成有源极7,在AlGaN掺杂层4的上表面栅极6的另一侧形成有漏极8,在栅极6、源极7和漏极8上形成有钝化层9,且源极7和漏极8通过钝化层9与栅极6相隔离,其特征在于,在AlGaN掺杂层4的内部设有绝缘层10且绝缘层10的上表面裸露于AlGaN掺杂层4的上表面,所述绝缘层10与栅氧化层5相接触且位于所述栅氧化层5与漏极8之间。所述绝缘层10在器件的栅宽方向至少分布有2个,且它们沿着器件栅宽方向均匀分布。所述绝缘层10的下表面距离本征GaN层3的距离为15~20nm。所述绝缘层10的长度与栅极6到漏极8的长度比例为0.5~1:1。所述绝缘层10的宽度与相邻两个绝缘层10之间间隙的宽度比例为1~2:1。
Claims (5)
1.一种AlGaN/GaN高电子迁移率功率半导体器件,包括:Si基衬底(1),在Si基衬底(1)上形成有AlN成核层(2),在AlN成核层(2)上形成有本征GaN层(3),在本征GaN层(3)上形成有AlGaN掺杂层(4),在AlGaN掺杂层(4)中形成有栅氧化层(5),所述栅氧化层(5)贯穿AlGaN掺杂层(4)且始于AlGaN掺杂层(4)的下表面并止于AlGaN掺杂层(4)的上表面,在栅氧化层(5)的上表面形成有栅极(6),在AlGaN掺杂层(4)的上表面栅极(6)的一侧形成有源极(7),在AlGaN掺杂层(4)的上表面栅极(6)的另一侧形成有漏极(8),在栅极(6)、源极(7)和漏极(8)上形成有钝化层(9),且源极(7)和漏极(8)通过钝化层(9)与栅极(6)相隔离,其特征在于,在AlGaN掺杂层(4)的内部设有绝缘层(10)且绝缘层(10)的上表面裸露于AlGaN掺杂层(4)的上表面,所述绝缘层(10)与栅氧化层(5)相接触且位于所述栅氧化层(5)与漏极(8)之间。
2.根据权利要求1所述的AlGaN/GaN高电子迁移率功率半导体器件,其特征在于,所述绝缘层(10)在器件的栅宽方向至少分布有2个,且它们沿着器件栅宽方向均匀分布。
3.根据权利要求1所述的AlGaN/GaN高电子迁移率功率半导体器件,其特征在于,所述绝缘层(10)的下表面距离本征GaN层(3)的距离为15~20nm。
4.根据权利要求1所述的AlGaN/GaN高电子迁移率功率半导体器件,其特征在于,所述绝缘层(10)的长度与栅极(6)到漏极(8)之间的长度比例为0.5~1:1。
5.根据权利要求1所述的AlGaN/GaN高电子迁移率功率半导体器件,其特征在于,所述绝缘层(10)的宽度与相邻两个绝缘层(10)之间间隙的宽度比例为1~2:1。
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WO2019100793A1 (zh) * | 2017-11-21 | 2019-05-31 | 华南理工大学 | 一种与 Si-CMOS 工艺兼容的 AlGaN/GaN 异质结 HEMT 器件及其制作方法 |
CN109887818A (zh) * | 2019-03-13 | 2019-06-14 | 西安众力为半导体科技有限公司 | 一种电子束器件及其制作方法 |
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