CN105182589A - Touch display device and manufacturing method thereof - Google Patents
Touch display device and manufacturing method thereof Download PDFInfo
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- CN105182589A CN105182589A CN201510649374.0A CN201510649374A CN105182589A CN 105182589 A CN105182589 A CN 105182589A CN 201510649374 A CN201510649374 A CN 201510649374A CN 105182589 A CN105182589 A CN 105182589A
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- layer
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- touch control
- control display
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
Abstract
A manufacturing method of a touch display device includes the following steps of forming a touch control pattern layer on one side of a first substrate, forming a silicon nitride layer on the side, away from the first substrate, of the touch control pattern layer, forming a color film base plate on the side, away from the touch control pattern layer, of the first substrate, and oppositely connecting the color film base plate and an array substrate into a box to obtain the touch display device. By means of the manufacturing method, due to the fact that the color film base plate and the array substrate are oppositely connected into the box after the touch control pattern layer is formed, the yield rate is high.
Description
Technical field
The present invention relates to touch-control display field, particularly relate to a kind of touch control display apparatus and preparation method thereof.
Background technology
Touch-screen is also called touch screen, contact panel, it is a kind of induction type liquid crystal indicator receiving the input signals such as contact, when contacting the graphic button on screen, haptic feedback system on screen can drive various hookup mechanism according to the formula of programming in advance, in order to replace mechanical push button panel, and lively visual and sound effects can be produced by liquid crystal display picture.Touch-screen is as a kind of up-to-date computer input apparatus, and it is the simplest, convenient current, natural a kind of man-machine interaction mode, and it giving multimedia with brand-new looks, is extremely attractive brand-new multimedia interactive equipment.
The making of OnCell touch-screen is a kind of technique be embedded into by touch-screen between the colored filter substrate of LCDs and polaroid, along with display device is to the development of all-in-one, OnCell touch-screen due to its technology relatively simple, and the dark favor by current world-famous cell phone manufacturer.
At present, the manufacture craft of OnCell touch screen is generally: the colored filter made and tft array substrate are completed after becoming liquid crystal display module to box-like, again LCDs colored filter away from tft array substrate side make touch control electrode, but due in the process of touch control electrode, need to adopt higher temperature, and need to adopt chemical liquid to carry out developing, etching, this all may cause damage to liquid crystal display module, makes the yield of OnCell touch screen lower.
Summary of the invention
Based on this, be necessary for the problems referred to above, a kind of touch control display apparatus and preparation method thereof is provided, to improve production yield.
A method for making for touch control display apparatus, comprises the steps:
Touch pattern layer is formed in the side of first substrate;
At the side formation silicon nitride layer of described touch pattern layer away from described first substrate;
At the side formation color membrane substrates of described first substrate away from described touch pattern layer;
Described color membrane substrates and array base palte are carried out operating box, obtains described touch control display apparatus.
Wherein in an embodiment, the thickness of described silicon nitride layer is 200nm ~ 400nm.
Wherein in an embodiment, adopt depositing operation to form described silicon nitride layer, described depositing temperature is greater than 200 DEG C.
Wherein in an embodiment, the pencil hardness of described silicon nitride is not less than 6H.
Wherein in an embodiment, also comprise and described silicon nitride layer is etched, to expose the binding region of described touch pattern layer.
Wherein in an embodiment, also comprise, by anisotropic conductive adhesive, flexible PCB is pasted to described binding region, described touch pattern layer is connected with the driving chip run for controlling touch-control circuit layer by described flexible PCB.
Wherein in an embodiment, at the side formation color membrane substrates of described first substrate away from described touch pattern layer, specifically comprise the steps:
At the side formation black matrix" of described first substrate away from described touch pattern layer;
The described first substrate with described black matrix" forms photoresist layer;
Described black matrix" and described photoresist layer form protective seam;
Described protective seam forms multiple chock insulator matter.
Wherein in an embodiment, be also included on described silicon nitride layer and form layer of polarizer.
Wherein in an embodiment, also comprise and cover-plate glass is attached at the side of described layer of polarizer away from described silicon nitride layer.
A kind of touch control display apparatus, adopts the method for making of above-mentioned arbitrary described touch control display apparatus to obtain.
The method for making of above-mentioned touch control display apparatus, by forming touch pattern layer in the side of substrate, and silicon nitride layer is formed on touch pattern layer, color membrane substrates is formed again on substrate, then color membrane substrates and array base palte are carried out operating box, with existing OnCell processing procedure, after first completing color membrane substrates and array base palte box is operated, compare at the processing procedure of color membrane substrates away from one deck formation touch pattern layer of array base palte again, the chemical liquid used in touch pattern layer formation process can be avoided may to cause erosion to color membrane substrates and array base palte, pyroprocess also may cause damage to liquid crystal, the production yield of touch control display apparatus is improved with this, reduce the waste of material.
And silicon nitride layer moisture-penetrability is low, and barrier propterty is high, steam can be completely cut off and invade, carry out protection to avoid touch pattern layer and corrode, thus the serviceable life of prolongation touch control display apparatus in hot and humid.
In addition, silicon nitride layer also has the performances such as high rigidity scratch resistant, can improve the scratch resistance of touch control display apparatus.
Accompanying drawing explanation
Fig. 1 is the method for making schematic flow sheet of touch control display apparatus in one embodiment of the invention;
Fig. 2 ~ Fig. 8 is the structural representation of touch control display apparatus in manufacturing process in each stage in one embodiment of the invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar improvement when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Refer to Fig. 1, it is the method for making process flow diagram of touch control display apparatus in one embodiment of the invention, comprises the steps:
S110, form touch pattern layer in the side of first substrate.
In the present embodiment, first substrate can adopt the transparency carriers such as glass substrate, quartz base plate and plastic base, preferably, first substrate is glass substrate, and before glass substrate is dropped into, cleaning is carried out to glass baseplate surface, guarantees glass baseplate surface foreign.The material of described touch pattern layer is ITO (tin indium oxide).
Concrete, specifically comprise the steps:
S111, form ITO layer in the side of first substrate by vacuum sputtering;
Such as, the thickness of described ITO layer is 10 ~ 20nm, and the temperature of vacuum sputtering is 240 ~ 300 DEG C.
S112, described ITO layer away from described first substrate side coating photoresist layer;
Such as, the thickness of described photoresist layer is 2 ~ 10 microns, and homogeneity is within 5%, and preliminary drying temperature is 70 ~ 90 DEG C.
S113, described photoresist layer to be exposed;
Such as, by mask plate (mask) exposure, use positive photoresist, exposure light source exposes photoresist from orientation substrate through substrate, and exposure light source wavelength is 365nm.
S114, to exposure after described optical cement layer develop and solidify;
Such as, adopt KOH or other alkaline solutions as Tetramethylammonium hydroxide (TMAH) development, adopt type of heating that optical cement layer is solidified, and for example, heating-up temperature is 100 ~ 110 DEG C.
S115, described ITO layer to be etched, to form touch control electrode.
Concrete, do not etched by the place that described photoresist covers in described ITO layer, to form touch pattern layer, its planar structure schematic diagram refers to Fig. 1, and in the present embodiment, touch pattern layer adopts jumper wire construction.Preferably, after etching terminates, anneal in the temperature range of 200 ~ 250 DEG C, by this annealing, amorphous tin indium oxide polycrystallization, to improve electric conductivity.
S116, the periphery of described first substrate formed metal lead wire, described metal lead wire be electrically connected with described touch control electrode, and metal lead wire away from described touch control electrode one end formation bind region, obtain touch pattern layer.
It should be noted that, the material of described touch pattern layer is not limited to ITO, and described touch pattern layer can also adopt other materials, such as, and the materials such as nano-silver thread, NANO CRYSTAL COPPER WIRE and carbon nano-tube.
S120, described touch pattern layer away from described first substrate side formed silicon nitride layer.
Such as; adopt physical vapour deposition (PVD) (PVD) or plasma enhanced chemical vapor deposition (PECVD) technique at the side formation silicon nitride layer of touch pattern layer away from described first substrate; described silicon nitride layer is made to cover touch pattern layer; preferably; the thickness of silicon nitride layer is 200 ~ 400nm; when the thickness of silicon nitride layer is less than 200nm; more difficult realization is to the protective effect of touch pattern layer; and when the thickness of silicon nitride layer is greater than 400nm; required sedimentation time is longer, affects production efficiency.
The structure of the silicon nitride layer obtained to make deposition is finer and close, and such as, depositing temperature is greater than 200 DEG C, and the structure of the silicon nitride layer obtained to make deposition is finer and close, thus makes the silicon nitride layer hardness that obtains higher.Preferably, the pencil hardness of silicon nitride layer is not less than 6H.Pencil hardness refers to the numerical value that the Pencil scratch value recorded in the test method specified based on JISK5600-5-4 obtains.
Such as, by SiH
4: 280sccm, NH
3: 500sccm, N
2: form silicon nitride layer under the condition of 3000sccm and temperature 280 DEG C.
S130, described first substrate away from described touch pattern layer side formed color membrane substrates.
Concrete, comprise the steps:
S131, described first substrate away from described touch pattern layer side formed black matrix".
Concrete, first at the side coating black resin layer of described first substrate away from described touch pattern layer, then by mask plate, described black resin layer is exposed, develops, solidified, with the black matrix" formed.Wherein, the thickness of black matrix" is according to actual production requirements set, and such as, the thickness of black matrix" is 1.0 ~ 1.5 microns, and and for example, the thickness of black matrix" is 1.2 microns.
S132, on the described first substrate with described black matrix", form photoresist layer.
Particularly, the described first substrate with described black matrix" applies color resin, by mask plate, described color resin is exposed, develops and solidified, to form photoresist layer.In the present embodiment, photoresist layer comprises the red photoresistance district of same floor setting, green photoresistance district and blue light resistance district, and described red photoresistance district, described green photoresistance district and described blue light resistance district alternate cycles successively.
S133, on described black matrix" and described photoresist layer, form protective seam (Overcoat).
Particularly, black matrix" and photoresist layer apply transparent resin layer, to form protective seam.Such as, protective seam adopts transparent material to make, and and for example, the material of protective seam is the acrylic material of propylene resin.In the present embodiment, the thickness of protective seam is 1 ~ 3 micron.By arranging protective seam, photoresist layer can be protected further, and there is certain mobile phase before curing due to protective seam, the difference in height of viewing area and non-display area can also be adjusted, reduce the difference in height of viewing area and non-display area further.
S134, on described protective seam, form transparency conducting layer.
Such as, magnetron sputtering technique is adopted to form transparency conducting layer on described protective seam.In the present embodiment, the thickness of transparency conducting layer is 0.1 ~ 0.2 micron.
S135, on described transparency conducting layer, form multiple chock insulator matter (PhotoSpacer).
Such as, coated with resins layer on described hyaline layer, by mask plate exposure, development, to form multiple chock insulator matters over transparent conductive layer.Such as, in viewing area, chock insulator matter is formed at the top that transparency conducting layer correspond to black matrix".
In the present embodiment, chock insulator matter can be made as multiple applicable shape according to actual needs, such as cone, right cylinder, rectangular parallelepiped etc., and preferably, the base area of chock insulator matter is less than the area of black matrix".Chock insulator matter also can adopt material of different nature according to changing firmness requirements.
S140, described color membrane substrates and described array base palte are carried out operating box.
Concrete, comprise the steps:
S141: form array base palte in the side of second substrate.
In the present embodiment, second substrate can adopt the transparent insulation substrate such as glass substrate, quartz base plate and plastic base, and preferably, second substrate is glass substrate.
Particularly, make pixel electrode and TFT switch in the side of described second substrate, described TFT switch and described pixel electrode are rectangular formation on described second substrate.In the present embodiment, the processing procedure of described pixel electrode and described TFT switch is same as the prior art.In addition, as TFT switch, the material comprising amorphous silicon, polysilicon, IZGO (IndiumZincGalliumOxide, indium gallium zinc oxide) can be used, preferably use and comprise the large polysilicon of electron mobility or IZGO.
It should be noted that, step S141 also can before step S110 ~ 130, and the formation of array base palte is independently process, and it can complete before above-mentioned arbitrary step.
S142, described color membrane substrates and described array base palte are carried out operating box.
Concrete, described color membrane substrates and described array base palte are relatively configured mutually.Be formed with sealed plastic box at the circumference of color membrane substrates and/or array base palte, between described color membrane substrates and described array base palte, form liquid crystal layer.
In the present embodiment, specifically comprise the steps:
S1421, on described color membrane substrates and described array base palte, be coated with PI (polyimide) liquid respectively, then friction orientation;
S1422, on described color membrane substrates, form sealed plastic box, sealed plastic box is uv-curing type resin;
S1423, on described array base palte dispenser method;
S1424, ultraviolet irradiation 2 ~ 3min is carried out to described sealed plastic box after, described color membrane substrates and described array base palte are carried out operating box;
S1425, to heat to the described color membrane substrates after box and described array base palte, solidify completely to make described sealed plastic box.
S150: etch described silicon nitride layer, to expose the binding region of described touch pattern layer.
Concrete, employing equipment at dry quarter etches silicon nitride layer, exposes the binding region of touch pattern layer, that is, the binding region (pad region) for being connected with external drive chip of first substrate circumference.Lithographic method adopts existing dry etching method, does not repeat them here.
S160, by anisotropic conductive adhesive, flexible PCB is pasted to described binding region.
Concrete, by flexible PCB, namely FPC (FlexiblePritedCircuit) is pasted to binding region by anisotropic conductive adhesive (ACF), and described touch pattern layer is connected with the driving chip (IC) run for controlling touch pattern layer by described flexible PCB.
In the present embodiment, the second flexible PCB described array base palte connected for being connected with the driving chip (IC) controlling liquid crystal movement is also included in.
S170, on described silicon nitride layer, form layer of polarizer.
In the present embodiment, layer of polarizer is fitted by optical cement layer and described silicon nitride layer.In other embodiments, layer of polarizer also can be formed directly on described silicon nitride layer.
S180, cover-plate glass is attached at the side of described layer of polarizer away from described silicon nitride layer.
Such as, cover-plate glass is connected with the side of described layer of polarizer away from described silicon nitride layer by optical cement layer, and to protect whole touch control display apparatus from damage, and for example, cover-plate glass is tempered glass.
In addition, the present invention also provides a kind of touch control display apparatus, and it adopts above-mentioned either method to obtain.Wherein, the thickness of described silicon nitride layer is 200nm ~ 400nm, and the pencil hardness of described silicon nitride layer is not less than 6H.It should be noted that, silicon nitride layer of the present invention can not affect the touch controllable function of touch pattern layer, also can not affect penetrance and the colourity of light, be applicable to various types of touch control display apparatus.
In order to understand the method for making of touch control display apparatus further, also provide a kind of specific embodiment of method for making of touch control display apparatus below, it comprises the steps:
Steps A: form touch pattern layer 200 in the side of substrate 100, its complete after structural drawing refer to Fig. 2.
In the present embodiment, touch pattern layer 200 comprises X electrode 210, Y electrode 220, lead-in wire 230 and binding region 240, X electrode and comprises the multiple block type electrodes 211 prepared along a direction and the connecting portion 212 be connected to each other by adjacent block type electrode.Y electrode 220 is the strip shaped electric poles vertical with X electrode bearing of trend.Such as, X electrode is the conducting objects with light transmission and electric conductivity, and such as, ITO or IZO, X electrode 210 and Y electrode 220 also can be made up of other materials, such as, and Nano Silver, Nanometer Copper or carbon nano-tube etc.
Step B, touch pattern layer 200 away from first substrate 100 side formed silicon nitride layer 300, its complete after sectional view refer to Fig. 3.
In the present embodiment, higher than under the condition of 200 DEG C, on touch pattern layer 200, the silicon nitride layer 300 of one deck 200nm ~ 400nm is formed by plasma enhanced chemical vapor deposition (PECVD), by controlling the ratio of depositing temperature, silane, ammonia, nitrogen, the pencil hardness of the silicon nitride layer 300 deposited is made to be not less than 6H.
Step C, form black matrix" 410, photoresist layer 420, protective seam 430, transparency conducting layer 440 and multiple chock insulator matter 450 at first substrate 100 successively away from the side of touch pattern layer, obtain color membrane substrates 400, its complete after sectional view refer to Fig. 4.
Step D, on second substrate 500, form array base palte 510, array base palte 510 comprises the pixel electrode (not shown) in rectangular distribution and TFT switch 511.
Step e, by the periphery of color membrane substrates 400 formed sealed plastic box 401, dispenser method 501 on array base palte 510, color membrane substrates 400 and array base palte 510 are carried out operating box, make color membrane substrates be formed with the side of sealed plastic box 401 corresponding with the side that array base palte 410 is formed with liquid crystal 501, its complete after sectional view refer to Fig. 5.
Step F, silicon nitride layer 300 to be etched, to expose binding region 240, its complete after schematic cross-section refer to Fig. 6.
Step G, the first flexible PCB 610 is pasted to binding region 240, the second flexible PCB 620 is pasted to the connecting portion 512 of the periphery of array base palte 510, its complete after schematic cross-section refer to Fig. 7.
Step H, form layer of polarizer 700 at silicon nitride layer 300 away from the side of touch pattern layer 200, and cover-plate glass 800 be pasted to the side of layer of polarizer 700 away from silicon nitride layer 300, its complete after schematic cross-section refer to Fig. 8.
The method for making of above-mentioned touch control display apparatus, by forming touch pattern layer in the side of substrate, and silicon nitride layer is formed on touch pattern layer, color membrane substrates is formed again on substrate, then color membrane substrates and array base palte are carried out operating box, with existing OnCell processing procedure, after first completing color membrane substrates and array base palte box is operated, compare at the processing procedure of color membrane substrates away from one deck formation touch pattern layer of array base palte again, the chemical liquid used in touch pattern layer formation process can be avoided may to cause erosion to color membrane substrates and array base palte, pyroprocess also may cause damage to liquid crystal, the production yield of touch control display apparatus is improved with this, reduce the waste of material.
And silicon nitride layer moisture-penetrability is low, and barrier propterty is high, steam can be completely cut off and invade, carry out protection to avoid touch pattern layer and corrode, thus the serviceable life of prolongation touch control display apparatus in hot and humid.
In addition, silicon nitride layer also has the performances such as high rigidity scratch resistant, can improve the scratch resistance of touch control display apparatus.
Each technical characteristic of the above embodiment can combine arbitrarily, for making description succinct, the all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics does not exist contradiction, be all considered to be the scope that this instructions is recorded.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a method for making for touch control display apparatus, is characterized in that, comprises the steps:
Touch pattern layer is formed in the side of first substrate;
At the side formation silicon nitride layer of described touch pattern layer away from described first substrate;
At the side formation color membrane substrates of described first substrate away from described touch pattern layer;
Described color membrane substrates and array base palte are carried out operating box, obtains described touch control display apparatus.
2. the method for making of touch control display apparatus according to claim 1, is characterized in that, the thickness of described silicon nitride layer is 200nm ~ 400nm.
3. the method for making of touch control display apparatus according to claim 1, is characterized in that, adopt depositing operation to form described silicon nitride layer, described depositing temperature is greater than 200 DEG C.
4. the method for making of touch control display apparatus according to claim 3, is characterized in that, the pencil hardness of described silicon nitride is not less than 6H.
5. the method for making of touch control display apparatus according to claim 1, is characterized in that, also comprises and etching described silicon nitride layer, to expose the binding region of described touch pattern layer.
6. the method for making of touch control display apparatus according to claim 5, it is characterized in that, also comprise, by anisotropic conductive adhesive, flexible PCB is pasted to described binding region, described touch pattern layer is connected with the driving chip run for controlling touch-control circuit layer by described flexible PCB.
7. the method for making of touch control display apparatus according to claim 1, is characterized in that, at the side formation color membrane substrates of described first substrate away from described touch pattern layer, specifically comprises the steps:
At the side formation black matrix" of described first substrate away from described touch pattern layer;
The described first substrate with described black matrix" forms photoresist layer;
Described black matrix" and described photoresist layer form protective seam;
Described protective seam forms multiple chock insulator matter.
8. the method for making of touch control display apparatus according to claim 1, is characterized in that, is also included on described silicon nitride layer and forms layer of polarizer.
9. the method for making of touch control display apparatus according to claim 8, is characterized in that, also comprises and cover-plate glass is attached at the side of described layer of polarizer away from described silicon nitride layer.
10. a touch control display apparatus, is characterized in that, adopts the method for making of the arbitrary described touch control display apparatus of claim 1 ~ 9 to obtain.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065267A (en) * | 2017-05-22 | 2017-08-18 | 东旭（昆山）显示材料有限公司 | Touch screen color membrane substrates |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276630A (en) * | 1999-06-02 | 2000-12-13 | 株式会社半导体能源研究所 | Semiconductor device and its mfg. method |
| CN101149502A (en) * | 2007-11-02 | 2008-03-26 | 友达光电股份有限公司 | Touch control type planar display and its producing method |
| CN101261379A (en) * | 2008-02-01 | 2008-09-10 | 信利半导体有限公司 | Capacitance type touch screen and touch display devices containing the touch screen |
| CN101424817A (en) * | 2008-12-17 | 2009-05-06 | 友达光电股份有限公司 | Method for making colourful filtering touch control substrate |
| CN101813843A (en) * | 2009-02-24 | 2010-08-25 | 株式会社日立显示器 | Liquid crystal display device with input function |
| KR20110071348A (en) * | 2009-12-21 | 2011-06-29 | 삼성전자주식회사 | Substrate for a display device and method of manufacturing the same |
| CN102221756A (en) * | 2011-03-28 | 2011-10-19 | 彩虹集团公司 | Liquid crystal display (LCD) panel structure of integrated touch panel and manufacturing method thereof |
| JP2012098840A (en) * | 2010-10-29 | 2012-05-24 | Dainippon Printing Co Ltd | Color filter integrated touch panel sensor, display device with touch panel function, and method for manufacturing multi-panel work substrate |
| CN102714023A (en) * | 2010-01-20 | 2012-10-03 | 株式会社半导体能源研究所 | Driving method of liquid crystal display device |
| CN102763154A (en) * | 2009-12-10 | 2012-10-31 | 株式会社半导体能源研究所 | Display device and driving method thereof |
| CN102770902A (en) * | 2010-02-26 | 2012-11-07 | 株式会社半导体能源研究所 | Display device and driving method thereof |
| CN102944949A (en) * | 2012-11-21 | 2013-02-27 | 汕头超声显示器（二厂）有限公司 | Production method of touch displayer |
| CN103558942A (en) * | 2013-11-08 | 2014-02-05 | 京东方科技集团股份有限公司 | Touch screen and manufacturing method thereof |
| CN104238167A (en) * | 2013-06-24 | 2014-12-24 | 瀚宇彩晶股份有限公司 | Touch liquid crystal panel and manufacturing method thereof |
-
2015
- 2015-10-09 CN CN201510649374.0A patent/CN105182589A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276630A (en) * | 1999-06-02 | 2000-12-13 | 株式会社半导体能源研究所 | Semiconductor device and its mfg. method |
| CN101149502A (en) * | 2007-11-02 | 2008-03-26 | 友达光电股份有限公司 | Touch control type planar display and its producing method |
| CN101261379A (en) * | 2008-02-01 | 2008-09-10 | 信利半导体有限公司 | Capacitance type touch screen and touch display devices containing the touch screen |
| CN101424817A (en) * | 2008-12-17 | 2009-05-06 | 友达光电股份有限公司 | Method for making colourful filtering touch control substrate |
| CN101813843A (en) * | 2009-02-24 | 2010-08-25 | 株式会社日立显示器 | Liquid crystal display device with input function |
| CN102763154A (en) * | 2009-12-10 | 2012-10-31 | 株式会社半导体能源研究所 | Display device and driving method thereof |
| KR20110071348A (en) * | 2009-12-21 | 2011-06-29 | 삼성전자주식회사 | Substrate for a display device and method of manufacturing the same |
| CN102714023A (en) * | 2010-01-20 | 2012-10-03 | 株式会社半导体能源研究所 | Driving method of liquid crystal display device |
| CN102770902A (en) * | 2010-02-26 | 2012-11-07 | 株式会社半导体能源研究所 | Display device and driving method thereof |
| JP2012098840A (en) * | 2010-10-29 | 2012-05-24 | Dainippon Printing Co Ltd | Color filter integrated touch panel sensor, display device with touch panel function, and method for manufacturing multi-panel work substrate |
| CN102221756A (en) * | 2011-03-28 | 2011-10-19 | 彩虹集团公司 | Liquid crystal display (LCD) panel structure of integrated touch panel and manufacturing method thereof |
| CN102944949A (en) * | 2012-11-21 | 2013-02-27 | 汕头超声显示器（二厂）有限公司 | Production method of touch displayer |
| CN104238167A (en) * | 2013-06-24 | 2014-12-24 | 瀚宇彩晶股份有限公司 | Touch liquid crystal panel and manufacturing method thereof |
| CN103558942A (en) * | 2013-11-08 | 2014-02-05 | 京东方科技集团股份有限公司 | Touch screen and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107065267A (en) * | 2017-05-22 | 2017-08-18 | 东旭（昆山）显示材料有限公司 | Touch screen color membrane substrates |
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