CN105182138A - Power inductor element inductance and saturation current measurement circuit - Google Patents
Power inductor element inductance and saturation current measurement circuit Download PDFInfo
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- CN105182138A CN105182138A CN201510628697.1A CN201510628697A CN105182138A CN 105182138 A CN105182138 A CN 105182138A CN 201510628697 A CN201510628697 A CN 201510628697A CN 105182138 A CN105182138 A CN 105182138A
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Abstract
The invention relates to the technical field of inductor element measurement instruments, and discloses a power inductor element inductance and saturation current measurement circuit, which comprises an auxiliary power supply circuit, a large-power electronic switch circuit, a current voltage conversion circuit, an over-current protection circuit, a four-gear range selection circuit, and an MCU module circuit, wherein the large-power electronic switch circuit is connected with one GPIO port of the MCU module circuit and is also connected with the over-current protection circuit; the auxiliary power supply circuit is connected with the current voltage conversion circuit; the current voltage conversion circuit is connected with the four-gear range selection circuit; and the four-gear range selection circuit is connected with another two GPIO ports of the MCU module circuit. A single chip microcomputer internally integrated with functions of a timer and an ADC is adopted, through selection of a different range key switch, measurement of the inductance and the saturation current of the power inductor element is realized, and convenience of the measurement work and accuracy of numerical value measurement can be ensured.
Description
Technical field
The present invention relates to inductance element surveying instrument field of instrumentation technology, specifically a kind of power inductance component inductance value and saturation current metering circuit.
Background technology
The saturation current of inductance element is the maximum current that inductance element allows when normally working to pass through, and exceed this electric current, the magnetic induction density of inductance element magnetic core is by saturated, and inductance value will decline rapidly; This parameter is even more important on power inductance, and in electronic circuit, the quality of inductance element quality directly has influence on the reliability of electronic equipment.In nearly all power supply, all there is magnetic elements figure, inductor or transformer, the former limit of transformer and secondary equivalence can regard inductance as.In Power Management Design, often because the irrationality of high-frequency transformer design or manufacture craft not good, high-frequency transformer generation magnetic saturation is caused to damage Switching Power Supply, and the various trickle parameter of the transformer of coiling be not easy to control, needing testing tool to measure, whether it qualified.The power inductance quality that market is sold is uneven, and empty mark phenomenon often appears in parameter, the puzzlement very large to electron trade practitioner.So the current value when inductance value of accurate measured power inductance element and magnetic saturation is most important for the quality of electronic equipment.
Summary of the invention
The object of this invention is to provide a kind of power inductance component inductance value and saturation current metering circuit, cause the undesirable problem of quality to solve in electronic equipment production because the parameter of inductance element is inaccurate.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of power inductance component inductance value and saturation current metering circuit, it comprises auxiliary power circuit, high-power electronic switch circuit, current-to-voltage converting circuit, current foldback circuit, four gear selective circuit of measuring range, MCU module circuit, described auxiliary power circuit is connected with inductance element calibrating terminal, inductance element calibrating terminal respectively with high-power electronic switch circuit, current-to-voltage converting circuit is connected, described high-power electronic switch circuit is connected with a GPIO port of MCU module circuit, described high-power electronic switch circuit is also connected with overcurrent protection circuit, described auxiliary power circuit is connected with current-to-voltage converting circuit, current-to-voltage converting circuit is connected with four gear selective circuit of measuring range, four gear selective circuit of measuring range are connected with another two GPIO ports of MCU module, MCU module circuit is connected with measurement range selection button with industrial display respectively, auxiliary power circuit provides power supply for each circuit and power inductance component to be measured, when power inductance component to be measured is connected to calibrating terminal, select suitable range, press corresponding measurement range selection button, field effect transistor Q3 conducting in MCU module control circui high-power electronic switch circuit, MCU module circuit opening timing device and ADC analog to digital converter are sampled simultaneously, power inductance component to be measured is under the effect of voltage source, the electric current of its inside rises by constant tilt rate, MCU module circuit records the inductance value of power inductance component by calculating, and shows in industrial display, when the electric current in power inductance component to be measured rises to critical statisfaction place, high-speed comparator U3 in current foldback circuit drives triode Q5 conducting, the voltage of field effect transistor Q3 grid is dragged down end, sampling resistor R2 in current-to-voltage converting circuit detects the electric current that power inductance component to be measured flows through, and by Signal transmissions to operational amplifier U1, current signal is converted to voltage signal by operational amplifier U1, voltage signal enters fourth gear position selective circuit of measuring range after operational amplifier U2 cushions, field effect transistor Q6 in MCU module control circui four gear selective circuit of measuring range, the closedown of Q1, realize the selection of different range, calculate the saturation current value of detected power inductance component to be measured, and show in industrial display.
As a further improvement on the present invention, described auxiliary power circuit comprises+12V ,+3.3V two kinds of power supplys, and+12V power output end is connected with super large capacitor amount electric capacity C1 by the resistance R1 of high-power little resistance, the other end ground connection of electric capacity C1; Resistance R1 buffer capacitor C1 is on the impact of+12V power supply, and electric capacity C1 is used for stored energy; + 3.3V the power supply of accessory power supply by inputting obtaining after low pressure difference linear voltage regulator step-down of+12V power supply, in order to power to MCU module.
Further improve as of the present invention, described high-power electronic switch circuit is made up of power-type N channel field-effect pipe Q3 and driving circuit thereof and cut-off protection circuit, driving circuit is connected with the grid of field effect transistor Q3, after voltage stabilizing diode D2 parallel with one another in described driving circuit, resistance R8 resistance in series R7, be connected with the collector of triode Q4, the grounded emitter of triode Q4, the base stage of triode Q4 is connected with a GPIO port of described MCU module circuit by resistance R9; Triode Q4 plays anti-phase and level conversion effect; Cut-off protection circuit is made up of the resistance R3 mutually connected, diode D1; the other end of resistance R3 is connected with power inductance component calibrating terminal; the other end of diode D1 is connected with the drain electrode of field effect transistor Q3; when cut-off protection circuit can prevent field effect transistor Q3 from turning off, the high pressure that power inductance component to be measured generates due to self-induction action and then damage field effect transistor Q3.
Further improve as of the present invention, described current foldback circuit comprises high-speed comparator U3, potentiometer VR1, electric capacity C3, triode Q5, resistance R16, resistance R17, potentiometer VR1 parallel with one another is connected with the inverting input of high-speed comparator U3 with one end of electric capacity C3, the other end is connected with+12V the power supply of auxiliary power circuit by resistance R17, the in-phase input end of high-speed comparator U3 is connected with the output terminal of operational amplifier U2, the output terminal of high-speed comparator U3 is connected with the base stage of triode Q5, the grounded emitter of triode Q5, the collector of triode Q5 is connected with the grid of field effect transistor Q3 by resistance R7, high-speed comparator U3 forms voltage comparator, potentiometer VR1 and resistance R17 arranges the threshold value of overcurrent protection, electric capacity C3 plays filter action, when high-power electronic switch circuit overcurrent, high-speed comparator U3 exports high level and drives triode Q5 conducting, makes the voltage of field effect transistor Q3 grid be dragged down and then end.
Further improve as of the present invention, described current-to-voltage converting circuit comprises operational amplifier U1, operational amplifier U2, sampling resistor R2, resistance R4, resistance R5, resistance R10, field effect transistor Q2, one end of sampling resistor R2 is connected with auxiliary power circuit, the other end of sampling resistor R2 is connected with the in-phase input end of operational amplifier U1, the inverting input of operational amplifier U1 is connected with described electric capacity C1 by resistance R4, the output terminal of operational amplifier U1 is connected with the grid of field effect transistor Q2, the grid of field effect transistor Q2 is connected with auxiliary power circuit by resistance R5, the source electrode of field effect transistor Q2 is connected with the inverting input of operational amplifier U1, the drain electrode of field effect transistor Q2 is by resistance R10 ground connection, the drain electrode of field effect transistor Q2 is also connected with the in-phase input end of operational amplifier U2, the inverting input of operational amplifier U2 is connected with the in-phase input end of current foldback circuit high speed comparer U3, the output terminal of operational amplifier U2 is connected with four gear selective circuit of measuring range, current-to-voltage converting circuit detects the electric current that power inductance component to be measured flows through by sampling resistor R2, and by Signal transmissions to operational amplifier U1, the current signal flow through is converted to voltage signal by operational amplifier U1, and voltage signal enters fourth gear position selective circuit of measuring range after operational amplifier U2 cushions.
Further improve as of the present invention, described operational amplifier U1 selects rail-to-rail input and output, single power supply, the high precision operating amplifier of high cmrr, low input offset voltage, and its model is OP184; Described sampling resistor R2 selects high-power high-accuracy resistance.
Further improve as of the present invention, described four gear selective circuit of measuring range are by resistance R12, resistance R14, resistance R15, resistance R13, electric capacity C2, diode D3, diode D4, field effect transistor Q1, field effect transistor Q6 forms, and one end of resistance R12 is connected with the output terminal of operational amplifier U2, the other end of resistance 12 and resistance R14, resistance R15, one end of resistance R13 is connected, and the other end of resistance R14 is connected with the drain electrode of field effect transistor Q6, and the other end of resistance R15 is connected with the drain electrode of field effect transistor Q1, the other end of resistance R13 and one end of electric capacity C2, the anode of diode D3, the negative electrode of diode D4 is connected, the other end of electric capacity C2 respectively with field effect transistor Q1, the source electrode of field effect transistor Q6 connects rear ground connection, described field effect transistor Q1, the grid of field effect transistor Q6 is connected to another 2 GPIO ports of MCU module circuit respectively, the negative electrode of diode D3 is connected with+3.3V the power end of auxiliary power circuit, the anode of diode D3 is connected with the ADC input end of MCU module circuit, the plus earth of diode D4, four gear selective circuit of measuring range utilize voltage divider principle that circuit is set to fourth gear, and resistance R13 and electric capacity C2 plays low-pass filtering effect, and diode D3, diode D4 play limited amplitude protection effect, when field effect transistor Q6, field effect transistor Q1 close, fail to play dividing potential drop effect, when field effect transistor Q6 unlatching, field effect transistor Q1 close, intrinsic standoff ratio is 1/3, when field effect transistor Q6 closedown, field effect transistor Q1 open, intrinsic standoff ratio is 1/4, when field effect transistor Q6, field effect transistor Q1 open, intrinsic standoff ratio is 1/6, and 2 GPIO ports corresponding to MCU module circuit export high high level, low and high level, low high level, low low level four kinds of gears accordingly.
Further improve as of the present invention, described field effect transistor Q1, field effect transistor Q6 adopt the N channel field-effect pipe of low turn-on voltage, low conducting internal resistance respectively.
Further improve as of the present invention, described MCU module circuit comprises MCU module, another four GPIO ports of MCU module circuit are connected with keyswitch S1, keyswitch S2, keyswitch S3, keyswitch S4 respectively, MCU module adopts serial mode to be connected with industrial display, described MCU module is made up of the single-chip microcomputer of inner integrated timer and ADC analog-digital converter function, and require that SCM anti-interference ability is strong, be applicable to commercial Application, fast operation, the figure place of ADC analog to digital converter is at least 12.
Further improve as of the present invention, the model of described MCU module is PIC18F2423.
When power inductance component to be measured is connected to calibrating terminal, power inductance component to be measured is under the effect of voltage source, the electric current of its inside rises by constant tilt rate, MCU module circuit counting goes out the variable quantity of the magnitude of current in timer certain intervals, then according to formula U=L* (di/dt), (in formula, di is the variable quantity of electric current, and dt is time variation amount) calculates L, i.e. inductance value.
When the electric current in power inductance component to be measured rises to critical statisfaction place, the state that on it, rate of change of electric current linearly can be risen from original fixed slope and electric current becomes slope and obviously increases, namely the speed that now electric current rises obviously is accelerated, and strength of current is now the saturation current of inductance.After sampling resistor R2 detects obvious curent change, MCU module circuit is switch-off power field effect transistor Q3 at once, now add that corresponding filtering algorithm extracts saturation current value, sampling resistor R2 detects the electric current that inductance flows through, current signal is converted to voltage signal by operational amplifier U1, voltage on resistance R10 is the voltage signal changed into, and the derivation of equation that electric current is converted to voltage is as follows:
If U+ is the voltage of operational amplifier U1 in-phase input end, U-is the voltage of inverting input, voltage on electric capacity C1 is Vcc, the electric current that sampling resistor R2 flows through is I0, the electric current that resistance R4 flows through is I1, voltage on resistance R10 is U1, analyzes known according to operational amplifier " empty short " " empty disconnected ":
Vcc-I0*R2=Vcc-I1*R4（1）
That is: I1=I0*R2/R4(2)
U1=I1*R10=I0*R2*R10/R4（3）
If set according to R2=0.05 Ω, R4=100 Ω, R10=2K Ω, then U1=I1, if namely I1 is 1A, then U1 equals 1V.
Voltage on resistance R10 enters four gear selective circuit of measuring range by operational amplifier U2 buffering, and the closedown of field effect transistor Q6, Q1 in MCU module control circui four gear selective circuit of measuring range, if according to R12=100K Ω, R14=51K Ω, R15=33K Ω sets, as field effect transistor Q6, when Q1 closes, do not play dividing potential drop effect, Q6 opens, when Q1 closes, intrinsic standoff ratio is that 1/3, Q6 closes, when Q1 opens, intrinsic standoff ratio is 1/4, Q6, when Q1 opens, intrinsic standoff ratio is 1/6; According to the selection of different range, MCU module calculates the saturation current value of detected power inductance component to be measured, and shows in industrial display.
Keyswitch S1, keyswitch S2, keyswitch S3, keyswitch S4 are non-self lock button.
Tool of the present invention has the following advantages:
(1) the present invention adopts the MCU module circuit be made up of the single-chip microcomputer of inner integrated timer and ADC analog-digital converter function, by the operation of high-power electronic switch circuit, four gear selective circuit of measuring range, current-to-voltage converting circuit, by the selection of different range keyswitch, achieve the inductance value of power inductance component and the measurement of saturation current, ensure that the simplicity measuring operation and the accuracy measuring numerical value;
(2) noise robustness of the present invention is strong, owing to using the operational amplifier U1 of high cmrr, substantially increases accuracy and the reliability of measurement result;
(3) utilize the present invention to the measuring method of power inductance component, security performance is high, is equivalent to adopt the power supply of the relative big current of low-voltage to measure power inductance component, and overcurrent protection employs hardware comparator, and when circuit overcurrent, protection speed is fast.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present invention.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail.
A kind of power inductance component inductance value as shown in Figure 1 and saturation current metering circuit, it comprises auxiliary power circuit, high-power electronic switch circuit, current-to-voltage converting circuit, current foldback circuit, four gear selective circuit of measuring range, MCU module circuit, auxiliary power circuit is connected with inductance element calibrating terminal, inductance element calibrating terminal respectively with high-power electronic switch circuit, current-to-voltage converting circuit is connected, high-power electronic switch circuit is connected with a GPIO port of MCU module circuit, high-power electronic switch circuit is also connected with overcurrent protection circuit, auxiliary power circuit is connected with current-to-voltage converting circuit, current-to-voltage converting circuit is connected with four gear selective circuit of measuring range, four gear selective circuit of measuring range are connected with another two GPIO ports of MCU module, MCU module circuit is connected with measurement range selection button with industrial display respectively, auxiliary power circuit provides power supply for each circuit and power inductance component to be measured, when power inductance component to be measured is connected to calibrating terminal, select suitable range, press corresponding measurement range selection button, field effect transistor Q3 conducting in MCU module control circui high-power electronic switch circuit, MCU module circuit opening timing device and ADC sampling simultaneously, power inductance component to be measured is under the effect of voltage source, and the electric current of its inside rises by constant tilt rate, MCU module circuit records the inductance value of power inductance component by calculating, and shows in industrial display, when the electric current in power inductance component to be measured rises to critical statisfaction place, high-speed comparator U3 in current foldback circuit drives triode Q5 conducting, the voltage of field effect transistor Q3 grid is dragged down end, sampling resistor R2 in current-to-voltage converting circuit detects the electric current that power inductance component to be measured flows through, and by Signal transmissions to operational amplifier U1, current signal is converted to voltage signal by operational amplifier U1, voltage signal enters fourth gear position selective circuit of measuring range after operational amplifier U2 cushions, field effect transistor Q6 in MCU module control circui four gear selective circuit of measuring range, the closedown of Q1, realize the selection of different range, calculate the saturation current value of detected power inductance component to be measured, and show in industrial display.
Auxiliary power circuit comprises+12V ,+3.3V two kinds of power supplys, and+12V power output end is connected with super large capacitor amount electric capacity C1 by the resistance R1 of high-power little resistance, the other end ground connection of electric capacity C1; Resistance R1 buffer capacitor C1 is on the impact of+12V power supply, and electric capacity C1 is used for stored energy; + 3.3V the power supply of accessory power supply by inputting obtaining after low pressure difference linear voltage regulator step-down of+12V power supply, in order to power to MCU module.
High-power electronic switch circuit is made up of power-type N channel field-effect pipe Q3 and driving circuit thereof and cut-off protection circuit, driving circuit is connected with the grid of field effect transistor Q3, after voltage stabilizing diode D2 parallel with one another in driving circuit, resistance R8 resistance in series R7, be connected with the collector of triode Q4, the grounded emitter of triode Q4, the base stage of triode Q4 is connected with a GPIO port of MCU module circuit by resistance R9; Triode Q4 plays anti-phase and level conversion effect; Cut-off protection circuit is made up of the resistance R3 mutually connected, diode D1; the other end of resistance R3 is connected with power inductance component calibrating terminal; the other end of diode D1 is connected with the drain electrode of field effect transistor Q3; when cut-off protection circuit can prevent field effect transistor Q3 from turning off, the high pressure that power inductance component to be measured generates due to self-induction action and then damage field effect transistor Q3.
Current foldback circuit comprises high-speed comparator U3, potentiometer VR1, electric capacity C3, triode Q5, resistance R16, resistance R17, potentiometer VR1 parallel with one another is connected with the inverting input of high-speed comparator U3 with one end of electric capacity C3, the other end is connected with+12V the power supply of auxiliary power circuit by resistance R17, the in-phase input end of high-speed comparator U3 is connected with the output terminal of operational amplifier U2, the output terminal of high-speed comparator U3 is connected with the base stage of triode Q5, the grounded emitter of triode Q5, the collector of triode Q5 is connected with the grid of field effect transistor Q3 by resistance R7, high-speed comparator U3 forms voltage comparator, potentiometer VR1 and resistance R17 arranges the threshold value of overcurrent protection, electric capacity C3 plays filter action, when high-power electronic switch circuit overcurrent, high-speed comparator U3 exports high level and drives triode Q5 conducting, makes the voltage of field effect transistor Q3 grid be dragged down and then end.
Current-to-voltage converting circuit comprises operational amplifier U1, operational amplifier U2, sampling resistor R2, resistance R4, resistance R5, resistance R10, field effect transistor Q2, one end of sampling resistor R2 is connected with auxiliary power circuit, the other end of sampling resistor R2 is connected with the in-phase input end of operational amplifier U1, the inverting input of operational amplifier U1 is connected with electric capacity C1 by resistance R4, the output terminal of operational amplifier U1 is connected with the grid of field effect transistor Q2, the grid of field effect transistor Q2 is connected with auxiliary power circuit by resistance R5, the source electrode of field effect transistor Q2 is connected with the inverting input of operational amplifier U1, the drain electrode of field effect transistor Q2 is by resistance R10 ground connection, the drain electrode of field effect transistor Q2 is also connected with the in-phase input end of operational amplifier U2, the inverting input of operational amplifier U2 is connected with the in-phase input end of current foldback circuit high speed comparer U3, the output terminal of operational amplifier U2 is connected with four gear selective circuit of measuring range, current-to-voltage converting circuit detects the electric current that power inductance component to be measured flows through by sampling resistor R2, and by Signal transmissions to operational amplifier U1, the current signal flow through is converted to voltage signal by operational amplifier U1, and voltage signal enters fourth gear position selective circuit of measuring range after operational amplifier U2 cushions.
Operational amplifier U1 selects rail-to-rail input and output, single power supply, the high precision operating amplifier of high cmrr, low input offset voltage, and its model is OP184; Sampling resistor R2 selects high-power high-accuracy resistance.
Four gear selective circuit of measuring range are by resistance R12, resistance R14, resistance R15, resistance R13, electric capacity C2, diode D3, diode D4, field effect transistor Q1, field effect transistor Q6 forms, and one end of resistance R12 is connected with the output terminal of operational amplifier U2, the other end of resistance 12 and resistance R14, resistance R15, one end of resistance R13 is connected, and the other end of resistance R14 is connected with the drain electrode of field effect transistor Q6, and the other end of resistance R15 is connected with the drain electrode of field effect transistor Q1, the other end of resistance R13 and one end of electric capacity C2, the anode of diode D3, the negative electrode of diode D4 is connected, the other end of electric capacity C2 respectively with field effect transistor Q1, the source electrode of field effect transistor Q6 connects rear ground connection, field effect transistor Q1, the grid of field effect transistor Q6 is connected to another 2 GPIO ports of MCU module circuit respectively, the negative electrode of diode D3 is connected with+3.3V the power end of auxiliary power circuit, the anode of diode D3 is connected with the ADC input end of MCU module circuit, the plus earth of diode D4, four gear selective circuit of measuring range utilize voltage divider principle that circuit is set to fourth gear, and resistance R13 and electric capacity C2 plays low-pass filtering effect, and diode D3, diode D4 play limited amplitude protection effect, when field effect transistor Q6, field effect transistor Q1 close, fail to play dividing potential drop effect, when field effect transistor Q6 unlatching, field effect transistor Q1 close, intrinsic standoff ratio is 1/3, when field effect transistor Q6 closedown, field effect transistor Q1 open, intrinsic standoff ratio is 1/4, when field effect transistor Q6, field effect transistor Q1 open, intrinsic standoff ratio is 1/6, and 2 GPIO ports corresponding to MCU module circuit export high high level, low and high level, low high level, low low level four kinds of gears accordingly.
Field effect transistor Q1, field effect transistor Q6 adopt the N channel field-effect pipe of low turn-on voltage, low conducting internal resistance respectively.
MCU module circuit comprises MCU module, another four GPIO ports of MCU module circuit are connected with keyswitch S1, keyswitch S2, keyswitch S3, keyswitch S4 respectively, MCU module adopts serial mode to be connected with industrial display, MCU module is made up of the single-chip microcomputer of inner integrated timer and ADC analog-digital converter function, and require that SCM anti-interference ability is strong, be applicable to commercial Application, fast operation, the figure place of ADC analog to digital converter is at least 12.
The model of MCU module is PIC18F2423.
In the present embodiment, resistance R2=0.05 Ω, resistance R4=100 Ω, resistance R10=2K Ω, resistance R12=100K Ω, resistance R14=51K Ω, resistance R15=33K Ω.
Line thicker in FIG represents power line, represents its upper reaches super-high-current.
It should be noted that, do not departing under concept thereof of the present invention, all protection scope of the present invention is belonged to modification to any subtle change that the present invention does.
Claims (10)
1. power inductance component inductance value and a saturation current metering circuit, is characterized in that: it comprises auxiliary power circuit, high-power electronic switch circuit, current-to-voltage converting circuit, current foldback circuit, four gear selective circuit of measuring range, MCU module circuit, described auxiliary power circuit is connected with inductance element calibrating terminal, inductance element calibrating terminal respectively with high-power electronic switch circuit, current-to-voltage converting circuit is connected, described high-power electronic switch circuit is connected with a GPIO port of MCU module circuit, described high-power electronic switch circuit is also connected with overcurrent protection circuit, described auxiliary power circuit is connected with current-to-voltage converting circuit, current-to-voltage converting circuit is connected with four gear selective circuit of measuring range, four gear selective circuit of measuring range are connected with another two GPIO ports of MCU module, MCU module circuit is connected with measurement range selection button with industrial display respectively, auxiliary power circuit provides power supply for each circuit and power inductance component to be measured, when power inductance component to be measured is connected to calibrating terminal, select suitable range, press corresponding measurement range selection button, field effect transistor Q3 conducting in MCU module control circui high-power electronic switch circuit, MCU module circuit opening timing device and ADC sampling simultaneously, power inductance component to be measured is under the effect of voltage source, and the electric current of its inside rises by constant tilt rate, MCU module circuit records the inductance value of power inductance component by calculating, and shows in industrial display, when the electric current in power inductance component to be measured rises to critical statisfaction place, high-speed comparator U3 in current foldback circuit drives triode Q5 conducting, the voltage of field effect transistor Q3 grid is dragged down end, sampling resistor R2 in current-to-voltage converting circuit detects the electric current that power inductance component to be measured flows through, and by Signal transmissions to operational amplifier U1, current signal is converted to voltage signal by operational amplifier U1, voltage signal enters fourth gear position selective circuit of measuring range after operational amplifier U2 cushions, field effect transistor Q6 in MCU module control circui four gear selective circuit of measuring range, the closedown of Q1, realize the selection of different range, calculate the saturation current value of detected power inductance component to be measured, and show in industrial display.
2. power inductance component inductance value according to claim 1 and saturation current metering circuit, it is characterized in that: described auxiliary power circuit comprises+12V, + 3.3V two kinds of power supplys, + 12V power output end is connected with super large capacitor amount electric capacity C1 by the resistance R1 of high-power little resistance, the other end ground connection of electric capacity C1; Resistance R1 buffer capacitor C1 is on the impact of+12V power supply, and electric capacity C1 is used for stored energy; + 3.3V the power supply of accessory power supply by inputting obtaining after low pressure difference linear voltage regulator step-down of+12V power supply, in order to power to MCU module.
3. power inductance component inductance value according to claim 1 and 2 and saturation current metering circuit, it is characterized in that: described high-power electronic switch circuit is made up of power-type N channel field-effect pipe Q3 and driving circuit thereof and cut-off protection circuit, driving circuit is connected with the grid of field effect transistor Q3, voltage stabilizing diode D2 parallel with one another in described driving circuit, after resistance R8 resistance in series R7, be connected with the collector of triode Q4, the grounded emitter of triode Q4, the base stage of triode Q4 is connected with a GPIO port of described MCU module circuit by resistance R9, triode Q4 plays anti-phase and level conversion effect, cut-off protection circuit is made up of the resistance R3 mutually connected, diode D1, the other end of resistance R3 is connected with power inductance component calibrating terminal, the other end of diode D1 is connected with the drain electrode of field effect transistor Q3, when cut-off protection circuit can prevent field effect transistor Q3 from turning off, the high pressure that power inductance component to be measured generates due to self-induction action and then damage field effect transistor Q3.
4. power inductance component inductance value according to claim 3 and saturation current metering circuit, it is characterized in that: described current foldback circuit comprises high-speed comparator U3, potentiometer VR1, electric capacity C3, triode Q5, resistance R16, resistance R17, potentiometer VR1 parallel with one another is connected with the inverting input of high-speed comparator U3 with one end of electric capacity C3, the other end is connected with+12V the power supply of auxiliary power circuit by resistance R17, the in-phase input end of high-speed comparator U3 is connected with the output terminal of operational amplifier U2, the output terminal of high-speed comparator U3 is connected with the base stage of triode Q5, the grounded emitter of triode Q5, the collector of triode Q5 is connected with the grid of field effect transistor Q3 by resistance R7, high-speed comparator U3 forms voltage comparator, potentiometer VR1 and resistance R17 arranges the threshold value of overcurrent protection, electric capacity C3 plays filter action, when high-power electronic switch circuit overcurrent, high-speed comparator U3 exports high level and drives triode Q5 conducting, makes the voltage of field effect transistor Q3 grid be dragged down and then end.
5. power inductance component inductance value according to claim 4 and saturation current metering circuit, it is characterized in that: described current-to-voltage converting circuit comprises operational amplifier U1, operational amplifier U2, sampling resistor R2, resistance R4, resistance R5, resistance R10, field effect transistor Q2, one end of sampling resistor R2 is connected with auxiliary power circuit, the other end of sampling resistor R2 is connected with the in-phase input end of operational amplifier U1, the inverting input of operational amplifier U1 is connected with described electric capacity C1 by resistance R4, the output terminal of operational amplifier U1 is connected with the grid of field effect transistor Q2, the grid of field effect transistor Q2 is connected with auxiliary power circuit by resistance R5, the source electrode of field effect transistor Q2 is connected with the inverting input of operational amplifier U1, the drain electrode of field effect transistor Q2 is by resistance R10 ground connection, the drain electrode of field effect transistor Q2 is also connected with the in-phase input end of operational amplifier U2, the inverting input of operational amplifier U2 is connected with the in-phase input end of current foldback circuit high speed comparer U3, the output terminal of operational amplifier U2 is connected with four gear selective circuit of measuring range, current-to-voltage converting circuit detects the electric current that power inductance component to be measured flows through by sampling resistor R2, and by Signal transmissions to operational amplifier U1, the current signal flow through is converted to voltage signal by operational amplifier U1, and voltage signal enters fourth gear position selective circuit of measuring range after operational amplifier U2 cushions.
6. power inductance component inductance value according to claim 5 and saturation current metering circuit, it is characterized in that: described operational amplifier U1 selects rail-to-rail input and output, single power supply, the high precision operating amplifier of high cmrr, low input offset voltage, its model is OP184; Described sampling resistor R2 selects high-power high-accuracy resistance.
7. power inductance component inductance value according to claim 6 and saturation current metering circuit, is characterized in that: described four gear selective circuit of measuring range are by resistance R12, resistance R14, resistance R15, resistance R13, electric capacity C2, diode D3, diode D4, field effect transistor Q1, field effect transistor Q6 forms, and one end of resistance R12 is connected with the output terminal of operational amplifier U2, the other end of resistance 12 and resistance R14, resistance R15, one end of resistance R13 is connected, and the other end of resistance R14 is connected with the drain electrode of field effect transistor Q6, and the other end of resistance R15 is connected with the drain electrode of field effect transistor Q1, the other end of resistance R13 and one end of electric capacity C2, the anode of diode D3, the negative electrode of diode D4 is connected, the other end of electric capacity C2 respectively with field effect transistor Q1, the source electrode of field effect transistor Q6 connects rear ground connection, described field effect transistor Q1, the grid of field effect transistor Q6 is connected to another 2 GPIO ports of MCU module circuit respectively, the negative electrode of diode D3 is connected with+3.3V the power end of auxiliary power circuit, the anode of diode D3 is connected with the ADC input end of MCU module circuit, the plus earth of diode D4, four gear selective circuit of measuring range utilize voltage divider principle that circuit is set to fourth gear, and resistance R13 and electric capacity C2 plays low-pass filtering effect, and diode D3, diode D4 play limited amplitude protection effect, when field effect transistor Q6, field effect transistor Q1 close, fail to play dividing potential drop effect, when field effect transistor Q6 unlatching, field effect transistor Q1 close, intrinsic standoff ratio is 1/3, when field effect transistor Q6 closedown, field effect transistor Q1 open, intrinsic standoff ratio is 1/4, when field effect transistor Q6, field effect transistor Q1 open, intrinsic standoff ratio is 1/6, and 2 GPIO ports corresponding to MCU module circuit export high high level, low and high level, low high level, low low level four kinds of gears accordingly.
8. power inductance component inductance value according to claim 7 and saturation current metering circuit, is characterized in that: described field effect transistor Q1, field effect transistor Q6 adopt the N channel field-effect pipe of low turn-on voltage, low conducting internal resistance respectively.
9. power inductance component inductance value according to claim 8 and saturation current metering circuit, it is characterized in that: described MCU module circuit comprises MCU module, another four GPIO ports of MCU module circuit respectively with keyswitch S1, keyswitch S2, keyswitch S3, keyswitch S4 is connected, MCU module adopts serial mode to be connected with industrial display, described MCU module is made up of the single-chip microcomputer of inner integrated timer and ADC analog-digital converter function, and require that SCM anti-interference ability is strong, be applicable to commercial Application, fast operation, the figure place of ADC analog to digital converter is at least 12.
10. power inductance component inductance value according to claim 9 and saturation current metering circuit, is characterized in that: the model of described MCU module is PIC18F2423.
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