CN105180854A - Large-power four-crystal integrated ultrasonic transducer - Google Patents
Large-power four-crystal integrated ultrasonic transducer Download PDFInfo
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- CN105180854A CN105180854A CN201510638088.4A CN201510638088A CN105180854A CN 105180854 A CN105180854 A CN 105180854A CN 201510638088 A CN201510638088 A CN 201510638088A CN 105180854 A CN105180854 A CN 105180854A
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Abstract
The invention provides a large-power four-crystal integrated ultrasonic transducer, which employs ultrasonic wave with frequency between 20 and 200 kHz. A transducing element is added, and the matching and optimization problems among elements of the transducer are taken into consideration. An independent coupling device is provided for each chip correspondingly, and the chips are separated by sound insulation layers, so that crosstalk influence among the chips is greatly reduced. Thus the transducer can satisfy the needs of large-power measurement, and is especially suitable for ultrasonic detection of non-metal materials with large sound resistance such as concrete. By means of an integrated drive circuit, the transducer selects and switches the working mode of a transducing device, can satisfy adaptability requirements during ultrasonic detection, and can select a corresponding working mode according to different materials to be tested.
Description
Technical field: the invention belongs to ultrasound examination field, is specifically related to the application of the aspect such as nonmetallic materials ultrasonic thickness test, non-metallic member UT (Ultrasonic Testing).
Background technology: at present, industrially the Ultrasonic Detection distance be mainly used between the flaw detection of hardware, object detects and the fluid-velocity survey etc. of liquid or gas, so conventional ultrasonic transducer forms a transducer by one or two transducing original paper, i.e. so-called single crystal transducer or twin crystal transducer usually.Current single crystal transducer or twin crystal transducer, due to inner transducing original paper quantity few (1 ~ 2), in use, for the nonmetallic materials that the acoustic resistances such as similar concrete are larger, due to material to the scattering of sound wave, absorb and cause ultrasonic attenuation serious, even if adopt transmission measurement to reduce raw energy loss, contour dimension and the inherent vice of nonmetallic materials effectively can not be detected.Secondly, that existing industrial ultrasonic detects employing is 0.25MH
z~ 12MH
zsound wave, belong to middle and high supersonic range, for the nonmetal high sound-resistance material sonic transmissions decay such as similar concrete rapidly, sound wave transmitting-receiving power is little.And, the structural parameters of transducing original paper do not design especially for high acoustic resistance materials application, more do not consider mutual matching optimization problem between transducing original paper, working mode change and focusing function (applicability requirement: for different measured materials is not possessed yet, working mode change and focusing need adjustment usually), efficiency low signal is weak, and transducer parameters is fixed unadjustable.Therefore, for the application of nonmetal high sound-resistance material (or to material that sound wave absorbs by force) Ultrasonic Detection, the single crystal transducer adopted at present or twin crystal transducer can not normally use.
Summary of the invention:
Object of the present invention: for the application of nonmetal high sound-resistance material (or to material that sound wave absorbs by force) Ultrasonic Detection, have developed a kind of four brilliant one ultrasonic transducers of specially designed high-power, convertible mode of operation.
Technical scheme of the present invention:
A kind of high-power four brilliant one ultrasonic transducers, device whole interior comprises four axisymmetric circular cylindrical cavities, the pugging segmentation formed by acoustical material between cavity, each cavity is made up of acoustical material, piezoelectric chip individual packages body and coupling device vertically from top to bottom, the top of cavity is integrated drive circuit board, device is overall is packaged into one by cylinder blanket, the transducer of composition combination ultrasonic transceiver.
Piezoelectric chip individual packages body is by protective sleeve, damping block and piezoelectric chip composition, damping block is cast in the piezoelectric chip back side after using epoxy resin to mix with tungsten powder, to reach damping action, four piezoelectric chip packaging body inclination symmetries are installed in four cavitys, piezoelectric chip is divided into two groups of work, two panels piezoelectric chip spaced in four piezoelectric chips is as one group of piezoelectric chip, wherein one group of piezoelectric chip is as transmitting wafer set, other one group of piezoelectric chip is as reception wafer set, in order to be distinguished, the two panels piezoelectric chip launching wafer set is called No. 1 and No. 3 wafers, No. 2 and No. 4 wafers are called as the two panels piezoelectric chip receiving wafer,
Protective sleeve in piezoelectric chip individual packages body is the cylindrical housings be made of metal, and upper surface has a perforate, and for through wire, wire is used for connecting integration driving circuit and piezoelectric chip; Without lower surface, piezoelectric chip directly contacts with the time delay block of coupling device;
Coupling device is made up of time delay block and coupling block from top to bottom; Delay block is the wedge type block made by organic glass, and coupling block is made up of abrasive rubber and plastic foil;
Integration driving circuit by controller, four-way controllable simulation switch, and signal transacting link composition; Wherein, signal transacting link is made up of gating control and power module circuit.
Two panels, as the piezoelectric chip launching wafer, adopts the potsherd PZT4 of lead zirconate titanate, is paired into transmitting group through screening, two panels is as the piezoelectric chip receiving piezoelectric chip, adopt lead zirconate titanate PZT 5, be paired into reception group through screening, also carried out the Machinery electricity matching of transmitting group and reception group; Wherein, PZT piezoelectric ceramics (lead zirconate titanate): P is the abbreviation of lead element Pb, and Z is the abbreviation of zr element Zr, and T is the abbreviation of titanium elements Ti.PZT piezoelectric ceramics is polycrystal brown lead oxide, lead zirconates, lead titanates at high temperature sintered.There is direct piezo electric effect and reversed piezoelcetric effect.P-4: iron platinum, manganese calcium modification lead zirconate titanate, P-5: belong to La, Nb modification binary system material.
Specifeca tion speeification for ultrasound piezoelectric wafer comprises physical dimension, electromechanical coupling factor, frequency constant, piezoelectric modulus, elastic constant etc., for realizing the coupling as the two panels piezoelectric chip launching wafer, select in the present invention and there is identical manufacture craft, physical dimension, the sensitivity of relative pulse echo, piezoelectric modulus, the piezoelectric chip of elastic constant and electromechanical coupling factor; Equally, as the coupling of the two panels piezoelectric chip receiving wafer for realizing, select and there is identical manufacture craft, physical dimension, the sensitivity of relative pulse echo, piezoelectric modulus, the piezoelectric chip of elastic constant and electromechanical coupling factor; For realizing the Machinery electricity matching of transmitting group and reception group, select in the present invention and there is identical physical dimension, electromechanical coupling factor, piezoelectric modulus, the piezoelectric chip of elastic constant, and by transmission piezoelectric wafer with receive piezoelectric chip and keep mutually tilting to be symmetrically distributed in four different cavitys, and the frequency of launching the transmission frequency of wafer and reception wafer relative pulse echo maximum sensitivity is consistent.
The mode of operation of transducer controls by the controller in integrated driving circuit is unified, and its concrete steps are as follows:
A. controller provides gating signal to four road controllable simulation switches by four I/O mouths;
B. gating signal controls four tunnels of multidiameter option switch circuit, makes the circuit ON between piezoelectric chip corresponding with it and other four the I/O mouths of controller or disconnection;
C. the gate control circuit of the gating signal that provided by four I/O mouths of controller control signal processing module simultaneously, the power module circuit synchronous working that gating is corresponding, realizes selection and the conversion of mode of operation thus;
In in the present invention high-power four brilliant one ultrasonic transducers, four wafers are relatively independent, and respective duty controls by controller is unified, according to actual needs, can be selected flexibly, sets multiple-working mode by control circuit.Radiating portion is made up of 1, No. 3 unit, and receiving unit is made up of 2, No. 4 unit, by setting the connecting and disconnecting duty of each wafer, can realize the combination setting of multiple-working mode.Controller provides gating signal by I/O mouth 1 ~ 4, and (high level is logical, low level is disconnected), in four tunnels of this signal gating multidiameter option switch circuit TS3A4751 chip certain one or more, the respective channel making it corresponding piezoelectric chip and controller is switched on or switched off; Gating signal connects the gate control circuit of signal transacting link below simultaneously, makes it respective channel power module circuit synchronous working, can realize selection and the conversion of different working modes shown in table 1 thus.
The list of table 1 mode of operation
According to actual testing requirement, preset or switch this device mode of operation in advance by director demon, as two two receipts, two bill receipts, single-emission and double-receiving, the sending and receiving of single-shot list are penetrated and receiving mode.
High-power four brilliant one ultrasonic transducers of the present invention receive and transmission frequency is 20KH
z~ 200KH
zthe ultrasound wave of scope, and frequency-adjustable.Ultrasonic transducer of the present invention can realize power, Working mode set and adjustment by control circui, is specially adapted to the Ultrasonic Detection of the larger nonmetallic materials of the acoustic resistances such as similar concrete.
Beneficial effect of the present invention:
In the present invention high-power four brilliant one ultrasonic transducers, employing frequency is 20KH
z~ 200KH
zthe ultrasound wave of scope, add inverting element, structure and parameter is designed especially, to consider in transducer mutual matching optimization problem between element, corresponding each wafer is furnished with separately independently coupling device, is isolated each other, greatly reduce the cross talk effects between wafer by pugging, the requirement of high-power measurement can be met, be specially adapted to the Ultrasonic Detection of the larger nonmetallic materials of the acoustic resistances such as similar concrete; By integrated driving circuit, realize the selection to transducing head mode of operation and conversion, the adaptability requirement in Ultrasonic Detection process can be met, according to different measured materials, corresponding mode of operation can be selected, there is efficiency high, the feature that efficiency is large.
Accompanying drawing illustrates:
Below in conjunction with accompanying drawing, by the citing of indefiniteness, preferred implementation method of the present invention is described further, in the accompanying drawings:
Apparatus of the present invention are made up of, shown in Fig. 1 ~ 4 four piezoelectric crystals that sloping shaft symmetry is installed each other.
Fig. 1 is schematic perspective view.Device whole interior comprises four axisymmetric circular cylindrical cavities, and four piezoelectric chips that sloping shaft symmetry is installed each other are positioned in four different cavitys respectively, mark No. 1 piezoelectric chip 1, No. 2 piezoelectric chips 2, No. 3 piezoelectric chips 3 and No. 4 piezoelectric chips 4; Wherein, No. 1 and No. 3 piezoelectric chips are for launching wafer, and No. 2 and No. 4 piezoelectric chips are reception wafer.
Fig. 2 is A-A ' face cut-open view in Fig. 1, and Fig. 3 is B-B ' face cut-open view in Fig. 1, and Fig. 4 is vertical view.Device whole interior comprises four axisymmetric circular cylindrical cavities, the pugging 9 formed by acoustical material between cavity is split, each cavity is made up of acoustical material 10, piezoelectric chip individual packages body 13 and coupling device 12 vertically from top to bottom, the top of cavity is integrated driving circuit 8, device is overall is packaged into one by cylinder blanket 14, wherein, piezoelectric chip individual packages body 13 is by protective sleeve 5, corresponding piezoelectric chip and damping block 11 form, and coupling device 12 is made up of time delay block 6 and coupling block 7;
The integrated driving circuit of Fig. 5, be made up of controller, four-way controllable simulation switch (TS3A4751), two signal transacting links, each signal transacting link is controlled by a gating and two power module circuit form, and four power module circuit are connected with corresponding 1 ~ No. 4 wafer respectively.
Fig. 6 is ultrasound wave transmission and reception schematic diagram under two two operation modes of knocking off.
Fig. 7 to knock off ultrasound wave transmission and reception schematic diagram under operation mode for two bill.
Fig. 8 is ultrasound wave transmission and reception schematic diagram under single-emission and double-receiving mode of operation.
Fig. 9 is that single-shot list is knocked off ultrasound wave transmission and reception schematic diagram under operation mode.
Embodiment
Below will be described in detail preferred embodiments of the present invention; Should be appreciated that preferred embodiments only in order to the present invention is described, instead of in order to limit the scope of the invention.
See Fig. 1 ~ 4, in the present invention high-power four brilliant one ultrasonic transducers are made up of four piezoelectric crystals that sloping shaft symmetry is installed each other, device whole interior comprises four axisymmetric circular cylindrical cavities, four piezoelectric chips that sloping shaft symmetry is installed each other are positioned in four different cavitys respectively, mark No. 1 piezoelectric chip 1 respectively, No. 2 piezoelectric chips 2, No. 3 piezoelectric chips 3 and No. 4 piezoelectric chips 4; Wherein, No. 1 and No. 3 piezoelectric chips are for launching wafer, and No. 2 and No. 4 piezoelectric chips are reception wafer.Device whole interior comprises four axisymmetric circular cylindrical cavities; the pugging 9 formed by acoustical material between cavity is split; each cavity is made up of acoustical material 10, piezoelectric chip individual packages body 13 and coupling device 12 vertically from top to bottom; the top of cavity is integrated driving circuit 8; device is overall is packaged into one by cylinder blanket 14; wherein; piezoelectric chip individual packages body 13 is by protective sleeve 5; corresponding piezoelectric chip and damping block 11 form, and coupling device 12 is made up of time delay block 6 and coupling block 7.
See Fig. 5, in high-power four brilliant one ultrasonic transducers of the present invention, four piezoelectric chips are relatively independent, and respective duty controls by controller is unified, according to actual needs, can be selected flexibly, sets multiple-working mode by control circuit.Setting and the conversion of mode of operation is realized by multi-way switch.Radiating portion is made up of 1, No. 3 unit, and receiving unit is made up of 2, No. 4 unit, by setting the connecting and disconnecting duty of each wafer, can realize the combination setting of multiple-working mode.Controller is by (high level is logical, and low level is disconnected), and controller sends frequency at 20KH by I/O mouth 5 ~ 6
z~ 200KH
zthe electric excitation signal of certain frequency in scope, controller is received by No. 2 by I/O mouth 7 ~ 8, and No. 4 piezoelectric chips return and electric signal after the process of signal transacting link; I/O mouth 1 ~ 4 provide in four tunnels of gating signal gating multidiameter option switch circuit TS3A4751 chip certain one or more, 5 ~ 8 respective channel making it corresponding wafer and controller I/O mouth are switched on or switched off; Gating signal connects " gating control " circuit of signal transacting link below simultaneously, makes it respective channel power module circuit synchronous working.Mode of operation is selected to be described below:
According to actual testing requirement, preset or switch this device mode of operation, as two two receipts, two bill receipts, single-emission and double-receiving, the sending and receiving of single-shot list are penetrated and receiving mode in advance by controller or program.
Example is exemplified below:
1. two two receipts patterns
Controller I/O mouth 1 ~ 4 exports high level.1, No. 3 piezoelectric chips are in transmitting duty, and 2, No. 4 piezoelectric chips are in reception duty, and under this mode of operation, ultrasound wave transmission and reception schematic diagram is shown in Figure 6.
2. two bill receives pattern
Controller I/O mouth 1 ~ 2 exports high level, and I/O mouth 3 (or 4) exports high level, I/O mouth 4 (or 3) output low level.1, No. 3 piezoelectric chips are in transmitting duty, and 2 (or 4) number piezoelectric chip is in reception duty, and under this mode of operation, ultrasound wave transmission and reception schematic diagram is shown in Figure 7.
3. single-emission and double-receiving pattern
Controller I/O mouth 1 (or 2) exports high level, I/O mouth 2 (or 1) output low level; I/O mouth 3 ~ 4 exports high level.1 (or 3) number piezoelectric chip is in transmitting duty, and 2, No. 4 piezoelectric chips are in reception duty, and under this mode of operation, ultrasound wave transmission and reception schematic diagram is shown in Figure 8.
4. pattern received by single-shot list
Controller I/O mouth 1 (or 2) exports high level, I/O mouth 2 (or 1) output low level; I/O mouth 3 (or 4) exports high level, I/O mouth 4 (or 3) output low level.1 (or 3) number piezoelectric chip is in transmitting duty, and 2 (or 4) number piezoelectric chip is in reception duty, and under this mode of operation, ultrasound wave transmission and reception schematic diagram is shown in Figure 9.
5. emission mode
Controller I/O mouth 1 ~ 2 (or 1, or 2) export high level; I/O mouth 3 ~ 4 output low level.1,3 (or 1, or 3) number piezoelectric chip is in emission state, and 2, No. 4 piezoelectric chips are in off working state.
6. receiving mode
Controller I/O mouth 1 ~ 2 output low level; I/O mouth 3 ~ 4 (or 3, or 4) export high level.1, No. 3 wafers are in off working state, and 2,4 (or 2, or 4) number piezoelectric chip is in accepting state.
Claims (4)
1. high-power four brilliant one ultrasonic transducers, device whole interior comprises four axisymmetric circular cylindrical cavities, the pugging segmentation formed by acoustical material between cavity, each cavity is made up of acoustical material, piezoelectric chip individual packages body and coupling device vertically from top to bottom, the top of cavity is integrated driving circuit, and device is overall is packaged into one by cylinder blanket;
Piezoelectric chip individual packages body is made up of protective sleeve, damping block and piezoelectric chip, four piezoelectric chip packaging body inclination symmetries are installed in four cavitys, piezoelectric chip is divided into two groups of work, two panels piezoelectric chip spaced in four piezoelectric chips is as one group of piezoelectric chip, one group of piezoelectric chip in two groups of piezoelectric chips is as transmitting wafer, and other one group of piezoelectric chip is as reception wafer;
Protective sleeve in piezoelectric chip individual packages body is the cylindrical housings be made of metal, and upper surface has a perforate, and for through wire, wire is used for connecting integration driving circuit and piezoelectric chip; Without lower surface, piezoelectric chip directly contacts with the time delay block of coupling device;
Coupling device is made up of time delay block and coupling block from top to bottom; Delay block is the wedge type block be made up of organic glass, and coupling block is made up of abrasive rubber and plastic foil;
Integration driving circuit by controller, four-way controllable simulation switch, and signal transacting link composition; Wherein, signal transacting link is made up of gating control and power module circuit.
2. transducer according to claim 1, it is characterized in that four piezoelectric chips symmetry that mutually tilts is arranged in four cavitys, transmission piezoelectric wafer and receive piezoelectric chip and mutually tilt to be symmetrically distributed in four different cavitys, two panels adopts the potsherd PZT4 of lead zirconate titanate as the piezoelectric chip launching wafer, there is identical manufacture craft, physical dimension, pulse echo sensitivity, piezoelectric modulus, electromechanical coupling factor and elastic constant; Two panels adopts the potsherd PZT5 of lead zirconate titanate as the piezoelectric chip receiving piezoelectric chip, has identical manufacture craft, physical dimension, pulse echo sensitivity, piezoelectric modulus, electromechanical coupling factor and elastic constant; Launch wafer and receive wafer and there is identical physical dimension, piezoelectric modulus, electromechanical coupling factor and elastic constant; Launch wafer transmission frequency consistent with the frequency receiving wafer pulse echo maximum sensitivity.
3. transducer according to claim 2, it is characterized in that the mode of operation of transducer controls by the controller in integrated driving circuit is unified, its concrete steps are as follows:
A. controller provides gating signal to four road controllable simulation switches by four I/O mouths;
B. gating signal controls four tunnels of multidiameter option switch circuit, makes the circuit ON between piezoelectric chip corresponding with it and other four the I/O mouths of controller or disconnection;
C. the gate control circuit of the gating signal that provided by four I/O mouths of controller control signal processing module simultaneously, the power module circuit synchronous working that gating is corresponding, realizes selection and the conversion of mode of operation thus.
4. transducer according to claim 3, is characterized in that receive MUT and transmission frequency are 20KH
z~ 200KH
zultrasound wave, and frequency-adjustable.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510638088.4A CN105180854B (en) | 2015-10-07 | 2015-10-07 | A kind of high-power four brilliant integral ultrasonic transducer |
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|---|---|---|---|
| CN201510638088.4A CN105180854B (en) | 2015-10-07 | 2015-10-07 | A kind of high-power four brilliant integral ultrasonic transducer |
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| CN105180854A true CN105180854A (en) | 2015-12-23 |
| CN105180854B CN105180854B (en) | 2017-10-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105973981A (en) * | 2016-05-03 | 2016-09-28 | 深圳市发利构件机械技术服务有限公司 | Ultrasonic detection apparatus of thickened area of end portion of drilling rod in drilling rod detection, and detection method thereof |
| CN110460941A (en) * | 2019-07-23 | 2019-11-15 | 武汉理工大学 | Transmitting-receiving integrated graphene sonic transducer |
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| CN110460941B (en) * | 2019-07-23 | 2020-12-18 | 武汉理工大学 | Transmitting-receiving integrated graphene acoustic sensor |
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|---|---|
| CN105180854B (en) | 2017-10-17 |
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