CN105162291B - A kind of electromagnetic type MEMS vibrational energy collectors and preparation method thereof - Google Patents
A kind of electromagnetic type MEMS vibrational energy collectors and preparation method thereof Download PDFInfo
- Publication number
- CN105162291B CN105162291B CN201510528824.0A CN201510528824A CN105162291B CN 105162291 B CN105162291 B CN 105162291B CN 201510528824 A CN201510528824 A CN 201510528824A CN 105162291 B CN105162291 B CN 105162291B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- groove
- inductor wire
- inductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of electromagnetic type MEMS vibrational energy collectors and preparation method thereof, after groove and respective inductor wire layer are prepared on two pieces of substrates, its groove will be made to form the cavity for accommodating movable permanent magnet after two pieces of substrate combinations, make respective inductor wire connect to form spiral inductance with cross-over mode.In vibration environment, the vibration pick-up structure of the electromagnetic energy collector can the free movement in cavity, it is the vibration pick-up structure of disresonance type, compared with the vibration pick-up structure of resonant mode in conventional energy electromagnetic type collector, its motion conditions is influenceed small by environmental vibration frequency, and can respond the ambient vibration of different directions.No matter how vibration frequency and direction of vibration change, and energy harvester of the invention can efficiently be collected into vibrational energy and be converted to electric energy, therefore with efficiency of energy collection high, and have the advantages that low cost of manufacture and uniformity are good.
Description
Technical field
The present invention relates to a kind of energy harvester for collecting vibrational energy in environment and preparation method thereof, more particularly to one kind
Electromagnetic vibration energy based on MEMS (Micro-Electro-Mechanical System, MEMS) technology is collected
Device and preparation method thereof.
Background technology
Internet of Things is wide in the field such as intelligent transportation, medical treatment ＆ health, environmental monitoring, public safety and national defense and military application prospect
Wealthy, China is promoted energetically using Internet of Things as strategic industry.Internet of Things includes identical or different wireless of many functions
Sensor node, the intercommunication of node, collaborative work.Micro- energy technology is responsible for sensor node and provides power supply, is thing
One of key technology of networking development.Micro- energy such as chemical energy battery or fuel cell is generally used for node is powered at present, but
It is that this kind of battery has the shortcomings that volume is big and restricted lifetime is, it is necessary to regularly replace or carry out fuel supplement.And energy harvester
Electric energy is converted into for node is powered by picking up environmental energy (such as light, vibration).Compare with chemical energy battery or fuel cell,
It has the advantages that economic, environmental protection and limits without the life-span in theory.Solar energy, electromagnetic radiation, the temperature difference, vibration etc. are all to pick up
Environmental energy, compared with other environmental energy, vibration is a kind of widely distributed energy source, therefore vibrational energy collector has
There is vast potential for future development.
According to different transfer principles, vibrational energy collector includes electromagnetic type, piezoelectric type and the three types such as electrostatic,
Wherein electromagnetic energy collector development is the most ripe.One typical electromagnetic energy collector is main by inductance and permanent magnet
Constitute, vibrational energy is converted to electric energy by it based on faraday electromagnetic induction principle.In order to improve efficiency of energy collection, it is desirable to electromagnetism
Formula energy harvester is operated in the vibration frequency in the intrinsic frequency of vibration pick-up structure in resonant condition, i.e. collector and external environment
Unanimously, but, the vibration in environment has frequency content many and the characteristics of changeable (bandwidth), therefore, the energy is received in practice
Storage is difficult to be operated in resonant condition, and its efficiency of energy collection is relatively low；Additionally, electromagnetic energy collector is often only capable of collecting single
The vibrational energy in one direction, when the environment of direction of vibration change at random is operated in, the vibrational energy that it can be collected into extremely has
Limit, further limit its efficiency of energy collection.
The content of the invention
Goal of the invention：For above-mentioned prior art, a kind of electromagnetic type MEMS vibrational energy collectors and its preparation side are proposed
Method, improves vibration energy harvesting efficiency.
Technical scheme：To achieve the above object, the technical solution adopted by the present invention is：
A kind of preparation method of electromagnetic type MEMS vibrational energy collectors, comprises the following steps：
(1) one layer of SiO, is grown in the first substrate surface by the method for thermal oxide as the first substrate from silicon2；
(2), with the SiO2Do mask and anisotropic etching, etching depth are carried out to the first substrate using TMAH reagents
It is 50~200 μm, groove is formed after etching；
(3) SiO of the first substrate surface, is removed using HF solution2, and by the method for thermal oxide the first substrate table
The bottom of face and groove and all side regions regrow the SiO of 100~1000nm thickness2, form bottom oxide；
(4) one layer of Ti and one layer of Cu, is made successively by sputtering at the surface of bottom oxide, as making inductor wire
Seed Layer；
(5) one layer of photoresist and photoetching, are formed on the surface of the Cu by spraying process, inductor wire layer pattern is defined,
Inductor wire layer includes some spaced inductor wires；
(6), by electric plating method 10~30 μm of the inductor wire layer pattern region growing Cu；
(7), by the Seed Layer for etching removal photoresist and be covered by photoresist, the preparation of inductor wire layer is completed；
(8) the surface system of groove inner region, is located in inductor wire layer by the method for enhanced chemical vapor deposition
Make one layer of 1~10 SiO of μ m thick2And photoetching, form top oxide layer；
(9), according to step (1)-(8), the second substrate surface be sequentially prepared groove, bottom oxide, inductor wire layer and
Top oxide layer；
(10), movable permanent magnet is placed in the groove of the first substrate, then the groove of the second substrate is just served as a contrast to first
The groove at bottom, is connected and is passed through between the head end and tail end of the inductor wire on first substrate and the second substrate with cross-over mode
The groove of eutectic bonding formation spiral inductance between Cu-Cu, the groove of the first substrate and the second substrate is collectively forming cavity.
A kind of electromagnetic type MEMS vibrational energy collectors, including the first substrate, open in the middle part of first substrate top surface
The bottom and the week side of boss for having the first groove, first substrate top surface and the first groove are equipped with the first bottom oxide, in institute
State the first bottom oxide surface and be provided with the first inductor wire layer, the first inductor wire layer includes some spaced inductance
Line, the every middle part of inductor wire is located in the first groove, and the every head end and tail end of inductor wire are located at outside the first groove respectively,
The surface for being located at the first groove inner region in the first inductor wire layer is provided with the first top oxide layer；
Second substrate, is provided with the second groove in the middle part of the second substrate lower surface, the second substrate lower surface and
The bottom of the second groove and the week side of boss are equipped with the second bottom oxide, and the second inductor wire is provided with the second bottom oxide surface
Layer, the second inductor wire layer includes some spaced inductor wires, and the every middle part of inductor wire is located in the second groove,
The every head end and tail end of inductor wire are located at outside the second groove respectively, and the second groove inner region is located in the second inductor wire layer
The surface in domain is provided with the second top oxide layer；
Second substrate is arranged at the first substrate top, and first groove and the second groove are collectively forming cavity, institute
Connect to form spiral shell with cross-over mode between the head end and tail end of stating the inductor wire of the first inductor wire layer and second inductor wire layer
Rotation inductance, is provided with movable permanent magnet in the cavity.
Further, the first inductor wire layer and the second inductor wire layer are constituted by one layer of Ti and one layer of Cu is compound, and first
By eutectic bonding between Cu-Cu between the head end and tail end of the inductor wire of inductor wire layer and the second inductor wire layer.
Further, the movable permanent magnet is spheroid or cylinder.
Further, the depth of first groove and the second groove is 50~200 μm, and first substrate and second is served as a contrast
Bottom is silicon substrate, and first bottom oxide and the second bottom oxide are SiO of the thickness in 100~1000nm2, described first
Top oxide layer and the second top oxide layer are SiO of the thickness at 1~10 μm2。
Beneficial effect：Compared with prior art, the present invention has advantages below：
1st, in vibration environment, the vibration pick-up structure of energy harvester of the present invention can the free movement in cavity, be disresonance
The vibration pick-up structure of formula, compared with the vibration pick-up structure of resonant mode in conventional energy collector, its motion conditions (such as motion amplitude)
Influenceed small by environmental vibration frequency, and the ambient vibration of different directions can be responded.No matter vibration frequency and direction of vibration
How to change, energy harvester of the invention can efficiently be collected into vibrational energy and be converted to electric energy, therefore, it is of the invention
Energy harvester has efficiency of energy collection high.
2nd, the present invention is prepared using MEMS technology, and sensor has that small size, high precision, uniformity are good, is easy to batch system
Make and low cost of manufacture advantage.
Brief description of the drawings
Fig. 1 is cross-sectional view of the invention；
Fig. 2 is the structural representation of the first substrate of the invention；
The structural representation of Fig. 3 spiral inductances of the present invention；
Have in figure：First substrate 10, the first groove 11, the first bottom oxide 12, the 13, the first top oxidation of the first inductor wire layer
The 14, second substrate 20 of layer, the second groove 21, the second bottom oxide 22, the second inductor wire layer 23, second push up oxide layer 24, movable
Permanent magnet 33.
Specific embodiment
A kind of preparation method of electromagnetic type MEMS vibrational energy collectors, comprises the following steps：
(1), from N-type (100) silicon as the first substrate 10, by the method for wet oxygen thermal oxide in the upper of the first substrate 10
The SiO of superficial growth 1000nm thickness2, wherein first substrate 10 is shaped as elongated rectangular shape.
(2) SiO for, being prepared with step (1)2Mask is done, TMAH (Tetramethyl ammonium are used
Hydroxide, TMAH) reagent carries out anisotropic wet etch to the first substrate 10, and etching depth is 50~
200 μm, the first groove 11 is formed in the upper surface middle part of the first substrate 10 after etching.
(3) SiO on the surface of the first substrate 10, is removed using HF (hydrofluoric acid) solution2, and by the method for wet oxygen thermal oxide
Regrow the SiO of 100~1000nm thickness in the bottom of the surface of the first substrate 10 and the first groove 11 and all side regions2,
Form the first bottom oxide 12.
(4), by above-mentioned steps (1)-(3), the second groove 21 is prepared in the lower surface of the second substrate 20, and in the second groove 21
Bottom and all side regions prepare the second bottom oxide 22.
(5), one layer of 100nm Ti and one layer of 500nm is made successively by sputtering at the surface of the first bottom oxide 12
Cu, as the Seed Layer for making inductor wire.
(6) one layer of photoresist and photoetching, are formed on the surface of Cu by spraying process, inductor wire layer pattern is defined.Due to
The first inductor wire layer 13 on first substrate 10 includes some spaced inductor wires, therefore is defining inductor wire layer figure
Corresponding mask plate need to be used according to the shape of precalculated inductor wire and position during shape.As shown in Fig. 2 in inductor wire
Portion is located in the first groove 11 and is fitted with groove, and the head end and tail end of inductor wire are located at the first bottom outside the first groove respectively
On the surface of oxide layer 12.
(7), by electric plating method it is defined go out inductance line graph the μ m thick of region growing 10~30 Cu.
(8), by the Seed Layer for etching removal photoresist and be covered by photoresist, the first inductor wire layer 13 is formed.
(9), according to step (5)-(8), the second inductor wire layer 23 is prepared on the second bottom oxide 22 of the second substrate 20.
Wherein, according to the shape of each inductor wire in the structure of spiral inductance in inductance type MEMS humidity sensors and the first inductor wire layer 13
Shape and position, the shape of inductor wire and position, light is passed through using corresponding mask plate in pre-designed second inductor wire layer 23
Carve the figure for defining the second inductor wire layer 23.
(10) inner region of the first groove 11, is located in the first inductor wire layer 13 by the method for enhanced chemical vapor deposition
Surface prepare one layer of 1~10 SiO of μ m thick2And photoetching, form first and push up oxide layer 14；And the second inductor wire layer 23
One layer of 1~10 SiO of μ m thick is prepared in the surface of the inner region of the second groove 212And photoetching, form second and push up oxide layer 24.
(11), movable permanent magnet is placed in the groove 11 of the first substrate, then by the groove 21 of the second substrate just to
The groove 11 of one substrate, is connected and is led between the head end and tail end of the inductor wire on the first substrate and the second substrate with cross-over mode
Eutectic bonding forms spiral inductance between crossing Cu-Cu, and the groove 21 of the substrate of groove 11 and second of the first substrate is collectively forming sky
Chamber, movable permanent magnet is limited in cavity.
Electromagnetic type MEMS vibrational energy collectors according to above method preparation are as shown in figure 1, including the He of the first substrate 10
Second substrate 20.The first groove 11, the upper surface of the first substrate 10 and the first groove are provided with the upper surface middle part of the first substrate 10
11 bottom and the week side of boss are equipped with the first bottom oxide 12, and the first inductor wire layer 13 is provided with the surface of the first bottom oxide 12, the
One inductor wire layer 13 includes some spaced inductor wires, and the every middle part of inductor wire is located in the first groove 11, every
The head end and tail end of inductor wire are located at outside the first groove 11 respectively, and the inner region of the first groove 11 is located in the first inductor wire layer 13
Surface be provided with the first top oxide layer 14.The second groove 21, the following table of the second substrate 20 are provided with the middle part of the lower surface of the second substrate 20
The bottom and the week side of boss of face and the second groove 21 are equipped with the second bottom oxide 22, and second is provided with the surface of the second bottom oxide 22
Inductor wire layer 23, the second inductor wire layer 23 includes some spaced inductor wires, and the every middle part of inductor wire is located at second
In groove 21, the every head end and tail end of inductor wire are located at outside the second groove 21 respectively, and the is located in the second inductor wire layer 23
The surface of the inner region of two groove 21 is provided with the second top oxide layer 24.
Second substrate 20 is arranged at the top of the first substrate 10, and the first groove 11 and the second groove 21 are collectively forming cavity, the
Connect to form spiral electricity with cross-over mode between the head end and tail end of the inductor wire of one inductor wire layer 13 and the second inductor wire layer 23
Sense, movable permanent magnet 33 is arranged in cavity.
The effect of the first bottom oxide 12 and the second bottom oxide 22 is to suppress the parasitic capacitance between substrate and inductor wire.
First inductor wire layer 13 and the second inductor wire layer 23 are constituted by one layer of Ti and one layer of Cu is compound, and Cu and bottom oxide are improved by Ti
Between adhesiveness；Using the dead resistance of Cu reduction inductor wires, the quality factor of inductance are improved；And by upper strata inductor wire
Eutectic bonding between the Cu of Cu and lower floor's inductor wire, realizes by the first substrate together with the second substrate combination, forming spiral electricity
Sense and cavity, the movable permanent magnet in cavity are spheroid or cylinder.First top oxide layer 14 and second top oxide layer 24 be 1~
The SiO of 10 μ m thicks2, the abrasion that the motion for preventing movable permanent magnet is caused to spiral inductance can with improve collector
By property.
Wherein, with cross-over mode between the head end and tail end of the inductor wire of the first inductor wire layer 13 and the second inductor wire layer 23
Connection forms spiral inductance, specially：Along (i+1) root inductor wire of substrate length orientation in first inductor wire layer 13
Tail end is bonded with the tail end of (i+1) root inductor wire of orientation in the second inductor wire layer 23 by Cu-Cu, the first inductor wire
In layer 13 in head end and second inductor wire layers 23 of (i+1) root inductor wire of orientation orientation i-th inductor wire
Head end by Cu-Cu be bonded, the two ends of spiral inductance have exit.The structure of spiral inductance is as shown in figure 3, shown in figure
The first substrate 10 on the first inductor wire layer 13 have 4 inductor wires, on the second substrate 20 the second inductor wire layer 23 have 3
Root inductor wire, the head end and the 4th tail end of inductor wire of first inductor wire of the first inductor wire layer 13 on the first substrate 10
As the exit of spiral inductance.
Using movable permanent magnet as vibration pick-up structure, under vibration environment effect, movable permanent magnet exists the energy harvester
Motion, causes the magnetic flux in Meander line inductor to change in cavity, and then causes negative with external in Meander line inductor
Induced-current is produced in the closed-loop path for carrying formation, so as to realize that vibrational energy is converted to electric energy, and is load supplying.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of preparation method of electromagnetic type MEMS vibrational energy collectors, it is characterised in that comprise the following steps：
(1) one layer of SiO, is grown in the first substrate surface by the method for thermal oxide as the first substrate from silicon2；
(2), with the SiO2Do mask and anisotropic etching is carried out to the first substrate using TMAH reagents, etching depth is 50
~200 μm, groove is formed after etching；
(3) SiO of the first substrate surface, is removed using HF solution2, and by the method for thermal oxide on the surface of the first substrate and
The bottom of groove and all side regions regrow the SiO of 100~1000nm thickness2, form bottom oxide；
(4) one layer of Ti and one layer of Cu, is made successively by sputtering at the surface of bottom oxide, as the seed for making inductor wire
Layer；
(5) one layer of photoresist and photoetching, are formed on the surface of the Cu by spraying process, inductor wire layer pattern, inductance is defined
Line layer includes some spaced inductor wires；
(6), by electric plating method 10~30 μm of the inductor wire layer pattern region growing Cu；
(7), by the Seed Layer for etching removal photoresist and be covered by photoresist, the preparation of inductor wire layer is completed；
(8), one is made on the surface that inductor wire layer is located at groove inner region by the method for enhanced chemical vapor deposition
The SiO of 1~10 μ m thick of layer2And photoetching, form top oxide layer；
(9), according to step (1)-(8), groove, bottom oxide, inductor wire layer and top oxygen are sequentially prepared in the second substrate surface
Change layer；
(10), movable permanent magnet is placed in the groove of the first substrate, then by the groove of the second substrate just to the first substrate
Groove, is connected and by Cu- between the head end and tail end of the inductor wire on first substrate and the second substrate with cross-over mode
The groove of eutectic bonding formation spiral inductance between Cu, the groove of the first substrate and the second substrate is collectively forming cavity.
2. a kind of electromagnetic type MEMS vibrational energy collectors, it is characterised in that：Including the first substrate (10), in first substrate
(10) upper surface middle part is provided with the first groove (11), the bottom of the first substrate (10) upper surface and the first groove (11) and
The week side of boss is equipped with the first bottom oxide (12), and the first inductor wire layer (13), institute are provided with the first bottom oxide (12) surface
Stating the first inductor wire layer (13) includes some spaced inductor wires, and the every middle part of inductor wire is located at the first groove (11)
Interior, the every head end and tail end of inductor wire are located at the first groove (11) outside respectively, in the first inductor wire layer (13) positioned at described
The surface of the first groove (11) inner region is provided with the first top oxide layer (14)；
Second substrate (20), the second groove (21), second substrate are provided with the second substrate (20) lower surface middle part
(20) bottom and the week side of boss of lower surface and the second groove (21) are equipped with the second bottom oxide (22), in second bottom oxidation
Layer (22) surface is provided with the second inductor wire layer (23), and second inductor wire layer (23) includes some spaced inductance
Line, the every middle part of inductor wire is located in the second groove (21), and the every head end and tail end of inductor wire are located at the second groove respectively
(21) it is outside, it is provided with the second top oxide layer positioned at the surface of the second groove (21) inner region in the second inductor wire layer (23)
(24)；
Second substrate (20) is arranged at the first substrate (10) top, and first groove (11) and the second groove (21) are common
Form cavity, between the head end and tail end of the inductor wire of first inductor wire layer (13) and second inductor wire layer (23) with
Cross-over mode is connected to form spiral inductance, and movable permanent magnet (33) is provided with the cavity.
3. a kind of electromagnetic type MEMS vibrational energy collectors according to claim 2, it is characterised in that：First inductance
Line layer (13) and the second inductor wire layer (23) are constituted by one layer of Ti and one layer of Cu is compound, the first inductor wire layer (13) and the second inductance
By eutectic bonding between Cu-Cu between the head end and tail end of the inductor wire of line layer (23).
4. a kind of electromagnetic type MEMS vibrational energy collectors according to Claims 2 or 3, it is characterised in that：It is described movable
Permanent magnet (33) is spheroid or cylinder.
5. a kind of electromagnetic type MEMS vibrational energy collectors according to claim 4, it is characterised in that：First groove
(11) and the second groove (21) depth be 50~200 μm, first substrate (10) and the second substrate (20) are silicon substrate, institute
State the first bottom oxide (12) and the second bottom oxide (22) is SiO of the thickness in 100~1000nm2, first top oxygen
Change layer (14) and the second top oxide layer (24) is SiO of the thickness at 1~10 μm2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510528824.0A CN105162291B (en) | 2015-08-25 | 2015-08-25 | A kind of electromagnetic type MEMS vibrational energy collectors and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510528824.0A CN105162291B (en) | 2015-08-25 | 2015-08-25 | A kind of electromagnetic type MEMS vibrational energy collectors and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105162291A CN105162291A (en) | 2015-12-16 |
| CN105162291B true CN105162291B (en) | 2017-07-07 |
Family
ID=54803076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510528824.0A Active CN105162291B (en) | 2015-08-25 | 2015-08-25 | A kind of electromagnetic type MEMS vibrational energy collectors and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105162291B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108059123B (en) * | 2017-12-08 | 2020-03-31 | 东南大学 | Electromagnetic vibration energy collector and preparation method thereof |
| CN108054895B (en) * | 2017-12-08 | 2019-12-24 | 东南大学 | Electromagnetic vibration energy collector and preparation method thereof |
| CN107947521B (en) * | 2017-12-08 | 2019-12-24 | 东南大学 | Electromagnetic vibration energy collector and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411135C (en) * | 2004-05-05 | 2008-08-13 | Atmel德国有限公司 | Method for producing a spiral inductance on a substrate, and a device fabricated according to such a method |
| CN103916046A (en) * | 2013-01-07 | 2014-07-09 | 北京嘉岳同乐极电子有限公司 | Piezoelectric magneto-electricity vibration generating set and manufacturing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100331226B1 (en) * | 2000-02-23 | 2002-04-26 | 이상헌 | microwave electric elements of using porous oxidized silicon pole |
| JP2005079286A (en) * | 2003-08-29 | 2005-03-24 | Canon Inc | Inductor and its manufacturing method |
-
2015
- 2015-08-25 CN CN201510528824.0A patent/CN105162291B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411135C (en) * | 2004-05-05 | 2008-08-13 | Atmel德国有限公司 | Method for producing a spiral inductance on a substrate, and a device fabricated according to such a method |
| CN103916046A (en) * | 2013-01-07 | 2014-07-09 | 北京嘉岳同乐极电子有限公司 | Piezoelectric magneto-electricity vibration generating set and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105162291A (en) | 2015-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105006994B (en) | Piezoelectric-electromagnetic hybrid MEMS vibration energy collector and preparation method thereof | |
| CN105162291B (en) | A kind of electromagnetic type MEMS vibrational energy collectors and preparation method thereof | |
| CN107452840B (en) | A kind of LED panel and preparation method thereof | |
| CN102254963A (en) | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof | |
| CN102263144A (en) | Semiconductor heterojunction solar cell based on bionic moth eye and manufacturing method thereof | |
| CN103036477A (en) | Multi-modal combined type energy collector based on flexible polymer piezoelectric materials | |
| CN106252501A (en) | A kind of based on piezoelectric thick in flexible substrate and preparation method thereof | |
| CN107947521B (en) | Electromagnetic vibration energy collector and preparation method thereof | |
| CN201655812U (en) | Three-layered antireflective passivation film for surfaces of solar cells | |
| CN103187476A (en) | Preparation method of solar cell | |
| CN102368506A (en) | n-zinc oxide/p-silica nanowire three-dimensional heterojunction solar energy conversion equipment | |
| CN102201465A (en) | Photovoltaic solar energy cell of silicon micro-nano structure | |
| JP2011096651A5 (en) | Method of manufacturing electrode and method of manufacturing power storage device having the electrode | |
| CN104538476A (en) | Silicon nano-wire suede based heterojunction solar battery and preparation method thereof | |
| CN103904146A (en) | Silicon-based thin-film solar cell with metal groove structure on bottom | |
| CN106653930A (en) | Plasmon enhanced photoelectric detector based on semiconductor nanomaterials and preparation method thereof | |
| CN103904932B (en) | A kind of electrostatic vibrational energy collector and preparation method thereof | |
| CN103187456B (en) | Solar cell | |
| CN206040658U (en) | A micron composite construction solar battery is received to silicon of passivation | |
| CN206163510U (en) | Two -sided coating film structure of board -like PECVD board | |
| CN104465814B (en) | It is a kind of to combine nano structure of zinc oxide extra small suede solar cell and preparation method thereof | |
| CN108059123B (en) | Electromagnetic vibration energy collector and preparation method thereof | |
| CN108054895B (en) | Electromagnetic vibration energy collector and preparation method thereof | |
| CN103187453B (en) | Solar cell | |
| CN108054952B (en) | A kind of piezoelectric-electrcombinedc combinedc vibrational energy collector and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |