CN105161561A - 一种半透明的碲锌镉薄膜太阳电池 - Google Patents
一种半透明的碲锌镉薄膜太阳电池 Download PDFInfo
- Publication number
- CN105161561A CN105161561A CN201510404295.3A CN201510404295A CN105161561A CN 105161561 A CN105161561 A CN 105161561A CN 201510404295 A CN201510404295 A CN 201510404295A CN 105161561 A CN105161561 A CN 105161561A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- film
- film solar
- transparent
- cdznte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910004611 CdZnTe Inorganic materials 0.000 title abstract 6
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 title 1
- 239000010409 thin film Substances 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 25
- 229910052714 tellurium Inorganic materials 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 13
- 229910007709 ZnTe Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 229910052725 zinc Inorganic materials 0.000 abstract description 5
- 239000011701 zinc Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 210000001142 back Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 150000003497 tellurium Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明属于新能源材料与器件领域，特别涉及一种用于建筑物外墙的半透明的碲锌镉薄膜太阳电池。本发明以碲锌镉薄膜作为薄膜太阳电池的吸收层材料，碲锌镉是直接带隙半导体，对可见光的吸收系数高且其禁带宽度可随着锌含量的增加从1.5eV变化到2.2eV，因此可以通过调制锌、镉元素的比例制备出具有不同颜色的薄膜材料，再加上前后的透明电极就能形成半透明的薄膜太阳电池结构。这种半透明的薄膜太阳电池既能透过部分太阳光，也能以较高的转换效率发电，从而成为建筑一体化的理想幕墙。
Description
技术领域
本项发明所属领域为新能源领域，特别涉及一种用于建筑物外墙的半透明薄膜太阳电池。
背景技术
太阳电池利用太阳能产生电能，但由于太阳光的功率密度较低而且太阳电池的转换效率不高，使太阳电池电站的建设需要占用大面积的土地来接受足够的阳光。在人口比较集中的城市和地区，从节约土地的观点出发，光伏一体化建筑应运而生。光伏一体化建筑的特点是将太阳电池覆盖在建筑表面，使建筑物的墙面同时具有光伏发电的功能，满足部分建筑物内的电力消耗，从而有效实现节能减排的目的。
目前用于光伏一体化建筑的太阳电池有单晶硅电池，多晶硅电池和非晶硅电池，单晶硅和多晶硅电池的特点是转换效率高，工艺成熟，能够大面积安装于建筑墙面等。但是这两种电池不具有透光的特点，不能用于对采光要求较高的建筑，因此半透明的太阳电池更加适合作为光伏一体化的建筑使用。非晶硅薄膜电池已经成功用于建筑，但是硅材料是间接带隙半导体，对太阳光的吸收系数较低，再加上它是非晶材料，这类单结电池组件的转换效率通常只有7～8%左右，发电效率很低。
中国专利CN101276854A和CN102254966A均提出的是碲锌镉薄膜太阳电池，其特点是通过利用具有渐变带隙的碲锌镉薄膜作为电池的吸收层，从而提高对太阳光谱的吸收范围。但是这种碲锌镉薄膜太阳电池由于吸收层有几百～几千纳米的碲锌镉或碲化镉薄膜，还有几十纳米不透明的背电极材料，使得整个电池不透光，因此不适合用作建筑物的半透明幕墙。
发明内容
本发明的目的是提出一种高效新型的半透明薄膜太阳电池。该方法的基本思想是利用碲锌镉薄膜作为薄膜太阳电池的吸收层材料，由于碲锌镉是直接带隙半导体，对可见光的吸收系数高达105cm-1，且其禁带宽度随着锌、镉的相对含量从1.5eV可变化到2.2eV，因此可以通过调制锌、镉元素的比例制备出具有不同可见光吸收边(不同颜色)的薄膜材料，再加上前后的透明电极就可以形成半透明的薄膜太阳电池结构。这种半透明的薄膜太阳电池既能透过部分太阳光，也能以较高的转换效率发电，从而成为建筑一体化的理想幕墙。
为实现本发明目的，本发明由以下措施构成的技术方案来实现。在白玻璃衬底上依次制备透明导电膜层、n型窗口层、碲锌镉吸收层、透明背电极层。透明导电膜（简称TCO）为ITO、SnO2:F（FTO）或ZnO:Al（ZTO）等n型材料，n型窗口层材料为CdS或ZnS薄膜。我们前期的研究结果表明，碲化镉薄膜的禁带宽度与锌组份x的关系式为Eg=1.525+0.675x，因此半透明的Cd1-xZnxTe吸收层的x应在0.1～1之间，且厚度为100nm～500nm。电池结构有如下两种，（1）上述Cd1-xZnxTe薄膜为本征材料，电池采用n-i-p结构，n型CdS或ZnS薄膜为窗口层材料，Cd1-xZnxTe本征吸收层作为i层，ZnTe:Cu薄膜作为p型背接触层，透明背电极采用p型透明导电薄膜(CuAlO2或ZnO:N)，如图1。（2）上述Cd1-xZnxTe薄膜是p型材料（如掺铜后），电池采用n-p结构，n型ZnS薄膜为窗口层材料，Cd1-xZnxTe薄膜材料作为p层，透明背电极采用石墨烯材料，如图2。
附图说明
图1为TCO/CdS/Cd1-xZnxTe/ZnTe:Cu/p型透明导电膜结构的碲锌镉薄膜太阳电池。
图2为TCO/ZnS/Cd1-xZnxTe:Cu/石墨烯结构的碲锌镉薄膜太阳电池。
具体实施方式
以下结合附图和实施例对本发明作进一步说明，但本发明的内容不仅限于实施例中涉及的内容。
实施例一：
第一种半透明的Cd1-xZnxTe薄膜太阳电池结构如图1所示，电池为n-i-p结构。在SnO2:F/CdS室温基底上，先将CdTe和ZnTe一起共蒸发到衬底形成Cd1-xZnxTe薄膜，x在0.1～1之间，厚度为100nm～500nm。将蒸发获得的Cd1-xZnxTe薄膜取出，在干燥氮气中300℃～350℃退火，保温30分钟，然后自然冷却到室温。用蒸发的方法在Cd1-xZnxTe薄膜上制备ZnTe:Cu薄膜，厚度50nm，然后在退火炉氮气气氛进行150℃～200℃热处理。最后用溅射方法镀200nmZnO:N薄膜作p型透明背电极。由此得到第一种半透明的Cd1-xZnxTe薄膜太阳电池。
实施例二：
第二种半透明的Cd1-xZnxTe薄膜太阳电池结构如图2所示，电池为n-p结构。在SnO2:F/ZnS室温基底上，先将CdTe、ZnTe和Cu三个靶一起共溅射到衬底形成Cd1-xZnxTe:Cu薄膜，x在0.1～1之间，厚度为100nm～500nm。将溅射获得的Cd1-xZnxTe:Cu薄膜取出，在干燥氮气中300℃～350℃退火，保温30分钟，然后自然冷却到室温。用溅射方法镀50层石墨烯薄膜作透明背电极。由此得到第二种半透明的Cd1-xZnxTe薄膜太阳电池。
Claims (7)
1.一种半透明的碲锌镉薄膜太阳电池，其特征是具有如下两种结构：（1）TCO/CdS/Cd1-xZnxTe/ZnTe:Cu/透明背电极；（2）TCO/CdS/Cd1-xZnxTe:Cu/透明背电极。
2.如权利要求1所述的结构为TCO/CdS/Cd1-xZnxTe/ZnTe:Cu/透明背电极的半透明碲锌镉薄膜太阳电池，其特征是在TCO/CdS衬底上先沉积一层Cd1-xZnxTe薄膜，然后顺序沉积ZnTe:Cu薄膜和透明背电极。
3.如权利要求1所述的结构为TCO/CdS/Cd1-xZnxTe:Cu/透明背电极的半透明碲锌镉薄膜太阳电池，其特征是在TCO/CdS衬底上先沉积一层Cd1-xZnxTe:Cu薄膜，然后沉积透明背电极。
4.如权利要求1所述的半透明碲锌镉薄膜太阳电池，其特征是Cd1-xZnxTe薄膜的x应满足0.1≤x≤1，相应薄膜的带隙在1.6eV～2.2eV之间变化。
5.如权利要求1所述的半透明碲锌镉薄膜太阳电池，其特征是Cd1-xZnxTe或Cd1-xZnxTe:Cu薄膜的厚度在100nm～500nm。
6.如权利要求1所述的半透明碲锌镉薄膜太阳电池，其特征是p型Cd1-xZnxTe:Cu薄膜采用Cu作掺杂剂。
7.如权利要求1所述的半透明碲锌镉薄膜太阳电池，其特征是透明背电极采用p型透明导电膜（CuAlO2或p-ZnO）或者石墨烯。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404295.3A CN105161561A (zh) | 2015-07-13 | 2015-07-13 | 一种半透明的碲锌镉薄膜太阳电池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404295.3A CN105161561A (zh) | 2015-07-13 | 2015-07-13 | 一种半透明的碲锌镉薄膜太阳电池 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105161561A true CN105161561A (zh) | 2015-12-16 |
Family
ID=54802374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510404295.3A Pending CN105161561A (zh) | 2015-07-13 | 2015-07-13 | 一种半透明的碲锌镉薄膜太阳电池 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161561A (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789455A (zh) * | 2016-03-24 | 2016-07-20 | 浙江零维光伏科技有限公司 | 一种用于有机薄膜太阳能电池的元素掺杂方法 |
| CN109545881A (zh) * | 2018-10-29 | 2019-03-29 | 四川大学 | 一种基于单晶硅片衬底的CdS/CdTe太阳电池 |
| CN110544729A (zh) * | 2019-08-09 | 2019-12-06 | 中山瑞科新能源有限公司 | 一种CdTe双面太阳能电池及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276854A (zh) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | 碲锌镉薄膜太阳能电池 |
| CN102254966A (zh) * | 2011-06-23 | 2011-11-23 | 上海太阳能电池研究与发展中心 | 具有渐变带隙结构的碲锌镉薄膜太阳能电池 |
| CN102893408A (zh) * | 2010-05-13 | 2013-01-23 | 第一太阳能有限公司 | 光伏器件导电层 |
| US20140000690A1 (en) * | 2011-03-15 | 2014-01-02 | Victor V. Plotnikov | Intrinsically Semitransparent Solar Cell and Method of Making Same |
-
2015
- 2015-07-13 CN CN201510404295.3A patent/CN105161561A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276854A (zh) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | 碲锌镉薄膜太阳能电池 |
| CN102893408A (zh) * | 2010-05-13 | 2013-01-23 | 第一太阳能有限公司 | 光伏器件导电层 |
| US20140000690A1 (en) * | 2011-03-15 | 2014-01-02 | Victor V. Plotnikov | Intrinsically Semitransparent Solar Cell and Method of Making Same |
| CN102254966A (zh) * | 2011-06-23 | 2011-11-23 | 上海太阳能电池研究与发展中心 | 具有渐变带隙结构的碲锌镉薄膜太阳能电池 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789455A (zh) * | 2016-03-24 | 2016-07-20 | 浙江零维光伏科技有限公司 | 一种用于有机薄膜太阳能电池的元素掺杂方法 |
| CN109545881A (zh) * | 2018-10-29 | 2019-03-29 | 四川大学 | 一种基于单晶硅片衬底的CdS/CdTe太阳电池 |
| CN110544729A (zh) * | 2019-08-09 | 2019-12-06 | 中山瑞科新能源有限公司 | 一种CdTe双面太阳能电池及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104518052B (zh) | 制造具有高量子效率的光伏器件的方法 | |
| KR102350885B1 (ko) | 태양 전지 | |
| US20100200059A1 (en) | Dual-side light-absorbing thin film solar cell | |
| CN110429145A (zh) | 一种硒化锑薄膜太阳电池及其制备方法 | |
| KR20120063324A (ko) | 양면 태양전지 | |
| KR101848853B1 (ko) | 반투명 cigs 태양전지 및 이의 제조방법 및 이를 구비하는 건물일체형 태양광 발전 모듈 | |
| KR20130111815A (ko) | 태양전지 및 이의 제조방법 | |
| CN105161561A (zh) | 一种半透明的碲锌镉薄膜太阳电池 | |
| US20120204947A1 (en) | Solar Cell and Manufacturing Method Thereof | |
| US20130056054A1 (en) | High work function low resistivity back contact for thin film solar cells | |
| KR20130042732A (ko) | 태양전지 모듈 및 이의 제조방법 | |
| CN104810429A (zh) | 制造包括具有表面层的吸收层的光伏器件的方法 | |
| CN104600146A (zh) | 一种双面薄膜太阳能电池 | |
| CN104882511B (zh) | 具有合适原子分布的i‑iii‑vi2化合物吸收件的光伏器件制造方法 | |
| CN104952982B (zh) | 通过合适的热处理制造光伏器件的方法 | |
| CN103975443A (zh) | 太阳能电池和使用其的太阳能电池模块 | |
| KR20120043315A (ko) | 화합물 반도체 광 흡수층을 구비한 태양전지 | |
| Sabbar et al. | A fabricated solar cell from ZnO/a-Si/polymers | |
| KR101180998B1 (ko) | 태양전지 및 이의 제조방법 | |
| KR101823689B1 (ko) | 태양전지 모듈 및 이의 제조방법 | |
| CN206878022U (zh) | 一种多晶硅薄膜太阳能电池 | |
| KR101305603B1 (ko) | 태양전지 및 이의 제조방법 | |
| CN104916716B (zh) | 用于光伏器件的吸收层及其制造方法 | |
| KR101628365B1 (ko) | 태양전지 및 이의 제조방법 | |
| KR101283174B1 (ko) | 태양전지 및 이의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151216 |
|
| WD01 | Invention patent application deemed withdrawn after publication |