CN105161508A - Hybrid imaging detector picture element structure for strengthening infrared permeability and preparation method of hybrid imaging detector picture element structure - Google Patents
Hybrid imaging detector picture element structure for strengthening infrared permeability and preparation method of hybrid imaging detector picture element structure Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000005728 strengthening Methods 0.000 title claims abstract description 8
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- 239000000463 material Substances 0.000 claims abstract description 160
- 230000006698 induction Effects 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims description 23
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
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- 238000004528 spin coating Methods 0.000 claims description 6
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 claims description 3
- 229960005265 selenium sulfide Drugs 0.000 claims description 3
- 238000001914 filtration Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 7
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
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- 239000000203 mixture Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 230000005622 photoelectricity Effects 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- 230000009466 transformation Effects 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
The invention provides a hybrid imaging detector picture element structure for strengthening infrared permeability and a preparation method of the hybrid imaging detector picture element structure. A visible light induction area and an infrared induction area are integrated into a chip. Through forming an infrared anti-reflection material with a smooth convex surface on a wafer surface below an infrared induction component and above a visible light induction component, and filtering visible light by the wafer, the ratio of infrared light entering a micro-bridge structure can be improved, so that the imaging quality of the infrared induction component is improved; visible and infrared hybrid imaging micromation and chip become possible.
Description
Technical field
The present invention relates to microelectronics technology, be specifically related to a kind of mixing imaging detector pixel structure strengthening infrared breathability and preparation method thereof.
Background technology
Along with development that is industrial and living standard, simple infrared imaging or simple visual light imaging can not satisfy the demands, have more broadband imaging technique and more and more receive publicity, particularly can simultaneously to visible ray and infrared light activated imaging technique.
But, in existing mixing image device, lens forming two light paths are adopted to carry out induction image forming to visible ray and infrared light respectively, computer processing system is finally adopted to be synthesized together, separation due to light path causes formed infrared image part and visible images part to produce larger deviation of the alignment, has a strong impact on image quality.
Due to microelectromechanical systems (MEMS) technology have small, intelligent, can perform, the plurality of advantages such as accessible site, processing compatibility are good, cost is low, if hybrid imaging technology can be combined with microelectric technique, work out the hybrid imaging technology of microelectronics technology, the problem that the deviation of the alignment of existing infrared image and visible images is large can be avoided.
Summary of the invention
In order to overcome above problem, the present invention aims to provide a kind of visible red strengthening infrared breathability and mixes imaging detector pixel structure and preparation method thereof outward, utilize the infrared anti-reflection material with round and smooth convex surfaces infrared through ability to strengthen, thus by hybrid imaging technology microminiaturization and chip, improve the quality being mixed into picture.
To achieve these goals, the invention provides a kind of mixing imaging detector pixel structure, it comprises:
One wafer, as visible ray filter course;
To lay respectively at above described wafer and the infrared induction region of lower surface and visible ray induction region; And
The signal of telecommunication for described visible ray induction region and described infrared induction region being exported carries out calculating and is converted to the converting unit of image; Wherein,
Visible ray induction region, is positioned at described wafer lower surface, the extraction pole that it comprises visible ray inductive means and the signal of telecommunication that formed by described visible ray inductive means exports;
Interconnection layer, is positioned at described wafer upper surface;
Dielectric layer, is positioned at the upper surface of described interconnection layer;
Groove, is arranged in described interconnection layer and described dielectric layer, and corresponds to above described visible ray inductive means;
Infrared anti-reflection material, is filled in described groove, has round and smooth convex surfaces, for having round and smooth convex surfaces, for strengthening the permeability of incident infrared light and converging incident infrared light; ;
Contact trench structure, is arranged in the described dielectric layer of described infrared anti-reflection material both sides;
Infrared induction region, be positioned at described infrared anti-reflection material and described contact trench superstructure, it comprises infrared induction structure; Described infrared induction structure comprises: lower release guard layer, infrared induction parts, electrode layer and upper release guard layer; Described infrared induction parts correspond to the top of described infrared anti-reflection material, for absorbing infrared light, and produce the signal of telecommunication; The edge of described infrared induction structure has the first supported hole, described contact trench structure upper surface is positioned at bottom described first supported hole, and the described electrode layer bottom described first supported hole is connected with described contact trench structure, export for the signal of telecommunication that described infrared induction parts are produced; The top of described infrared induction structure has the first release aperture; Between described infrared induction structure and described infrared anti-reflection material, there is the first cavity;
Support component, is positioned at the periphery of described infrared induction structure, and does not contact with described infrared induction structure, and described support component edge has the second supported hole, and be positioned at described dielectric layer upper surface bottom described second supported hole, its top has the second release aperture; There is between described support component and described micro-bridge structure the second cavity, and infrared induction structure with there is between support component the space be communicated with;
Wherein, visible ray and infrared light are injected from described wafer lower surface, and by described visible ray induction region, the described visible ray of part is absorbed by described visible ray induction region; Then, filter out not by the visible ray of described visible ray induction region absorption through described wafer, infrared light incides to absorb and produce the signal of telecommunication on described infrared induction parts and by described infrared induction parts and is transported to described converting unit after described infrared anti-reflection material, thus generates the outer vision-mix of visible red.
Preferably, the structure of described infrared anti-reflection material is pellicle mirror structure.
Preferably, described infrared anti-reflection material is silicon, germanium silicon or selenium sulfide.
Preferably, the top of described infrared anti-reflection material flushes with described dielectric layer top or lower than described dielectric layer top.
Preferably, there is infrared reflective material layer or whole described support component is infrared reflective material at the inner surface at described support component top or the whole inner surface of described support component, described infrared reflective material is for without the infrared light reflection of described infrared induction parts absorption to described infrared induction parts, and then being absorbed by described infrared induction parts.
Preferably; described infrared induction structure is that top has concavo-convex contoured surface and edge has the micro-bridge structure of the first supported hole; described infrared induction parts are infrared-sensitive material layer, and the part that described infrared-sensitive material layer and described electrode layer expose all covers by described upper release guard layer and described lower release guard layer.
To achieve these goals, present invention also offers the preparation method that a kind of visible red mixes imaging detector pixel structure outward, it comprises the following steps:
Step 01: provide a wafer, forms described visible ray induction region at described wafer lower surface;
Step 02: form described interconnection layer at described wafer upper surface;
Step 03: form described dielectric layer on described interconnection layer, etches described groove in described dielectric layer and described interconnection layer, forms the described infrared anti-reflection material with described round and smooth convex surfaces in described groove;
Step 04: form described contact trench structure in the described dielectric layer of described infrared anti-reflection material both sides;
Step 05: form the first sacrifice layer on described contact trench structure, described dielectric layer and described infrared anti-reflection material;
Step 06: form the first groove in described first sacrifice layer corresponding to described contact trench superstructure; Described first channel bottom exposes the surface of described contact trench structure;
Step 07: form described infrared induction structure on described first sacrifice layer with described first groove, then form the first release aperture in described infrared induction structural top; Wherein, the described electrode layer bottom described first supported hole is connected with described contact trench structure;
Step 08: form the second sacrifice layer on the described wafer completing described step 07;
Step 09: form the second groove in corresponding to described second sacrifice layer above the described dielectric layer outside described contact trench structure; Described second channel bottom exposes the surface of described dielectric layer;
Step 10: form described support component on described second sacrifice layer with described second groove, form the second release aperture at described support component top;
Step 11: carry out release process by the space of the described connection between described support component and described infrared induction structure, described first release aperture and described second release aperture, described first sacrifice layer and described second sacrifice layer are discharged, thus forms described first cavity and described second cavity.
Preferably, the structure of described infrared anti-reflection material is pellicle mirror structure; The formation of the described infrared anti-reflection material of described pellicle mirror structure comprises: first, adopts CVD or spin coating proceeding in described groove, fill described infrared anti-reflection material, and the top of infrared anti-reflection material described in planarization; Then, graphical described infrared anti-reflection material also only retains the described infrared anti-reflection material in described groove; Then, by high-temperature process, after cooling, described pellicle mirror structure is obtained.
Preferably, described high-temperature process is laser annealing technique.
Preferably, the structure of described infrared anti-reflection material is pellicle mirror structure; The formation of the described infrared anti-reflection material of described pellicle mirror structure comprises: first, is filled out fill described infrared anti-reflection material by CVD or spin coating proceeding in described groove, and the top of infrared anti-reflection material described in planarization; Then, graphical described infrared anti-reflection material also only retains the described infrared anti-reflection material in described groove; Then, utilize GTG photolithography plate figure, namely described photolithography plate figure iuuminting Xing You center reduces gradually to surrounding, is formed and has semi-transparent specular photoetching offset plate figure, then, forms described pellicle mirror structure through etching technics.
Preferably, in described step 03, adopt chemical vapor deposition method in described groove, deposit described infrared anti-reflection material.
Preferably, in described step 03, the top of described infrared anti-reflection material flushes with described dielectric layer top or lower than described dielectric layer top.
Preferably, in described step 10, before the described support component of formation, also comprise: on described second sacrifice layer with described second groove, form infrared reflective material, or form described infrared reflective material at the top of described second sacrifice layer with described second groove.
Preferably, the material of described support component is infrared reflective material.
Mixing imaging detector pixel structure of the present invention and preparation method thereof, by visible ray induction region and infrared induction regional ensemble in the chips, infrared anti-reflection material is formed by the crystal column surface below infrared induction parts and above visible ray inductive means, add the filtration of wafer to visible ray itself, the ratio that infrared light enters micro-bridge structure can be improved, and then improve the image quality of infrared induction parts, and make to be mixed into outside visible red that picture is microminiaturized, chip becomes possibility.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of the mixing imaging detector pixel structure of a preferred embodiment of the present invention
Fig. 2 is the schematic flow sheet of the manufacture method of the mixing imaging detector pixel structure of a preferred embodiment of the present invention
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
Mixing imaging detector pixel structure of the present invention, comprising: as the wafer of visible ray filter course; To lay respectively at above wafer and the infrared induction region of lower surface and visible ray induction region; And the signal of telecommunication for visible ray induction region and infrared induction region being exported carries out calculating and is converted to the converting unit of image; Wherein, visible ray induction region, is positioned at wafer lower surface, the extraction pole that it comprises visible ray inductive means and the signal of telecommunication that formed by visible ray inductive means exports; Be positioned at the interconnection layer of wafer upper surface; Be positioned at the dielectric layer of the upper surface of interconnection layer; Be arranged in interconnection layer and dielectric layer, and correspond to the groove above visible ray inductive means; Be filled in the infrared anti-reflection material in groove, have the surface of round and smooth projection, it for strengthening the permeability of incident infrared light and converging incident infrared light, thus prevents incident infrared light from reflecting; Be arranged in the contact trench structure of the dielectric layer of infrared anti-reflection material both sides; Be positioned at the infrared induction region above infrared anti-reflection material, it comprises infrared induction structure; Infrared induction structure comprises: lower release guard layer, infrared induction parts, electrode layer and upper release guard layer; Infrared induction parts correspond to the top of infrared anti-reflection material, for absorbing infrared light, and produce the signal of telecommunication; The edge of infrared induction structure has the first supported hole, is positioned at contact trench structure upper surface bottom the first supported hole, and the electrode layer bottom the first supported hole is connected with contact trench structure, exports for the signal of telecommunication produced by infrared induction parts; The top of infrared induction structure has the first release aperture; There is between infrared induction structure and infrared anti-reflection material the first cavity; Be positioned at the periphery of infrared induction structure and support component discontiguous with infrared induction structure, support component edge has the second supported hole, is positioned at dielectric layer upper surface bottom the second supported hole, and its top has the second release aperture; There is between support component and infrared induction structure the second cavity, and infrared induction structure with there is between support component the space be communicated with;
First cavity increases the distance between infrared induction structure and wafer, plays the hot buffer action between infrared induction structure and wafer and dielectric layer; Second cavity is resonant cavity, for being carried out by the infrared light absorbed without infrared induction structure repeated multiple timesly reflexing to infrared induction structure, thus realizes the absorption completely to the infrared light of incidence.
During detection, visible ray and infrared light are injected from wafer lower surface, and by visible ray induction region, visible ray is absorbed by visible ray induction region; Then, filter out not by visible ray that visible ray induction region absorbs through wafer, remaining infrared light incides to absorb and produce the signal of telecommunication on infrared induction parts and by infrared induction parts and is transported to converting unit after infrared anti-reflection material, thus generates the outer vision-mix of visible red.
Below in conjunction with accompanying drawing 1-2 and specific embodiment, mixing imaging detector pixel structure of the present invention and preparation method thereof is described in further detail.It should be noted that, accompanying drawing all adopt simplify very much form, use non-ratio accurately, and only in order to object that is convenient, that clearly reach aid illustration the present embodiment.
Refer to Fig. 1, in one embodiment of the invention, the direction of arrow represents that light injects direction, and mixing imaging detector pixel structure, comprising:
One Silicon Wafer 100, its upper surface has interconnection layer 101; Road device 114 before having in Silicon Wafer 100; Front road device 114 is positioned at both sides above visible ray induction region VS, and is positioned at below interconnection layer 101;
Visible ray induction region VS, is positioned at wafer 100 lower surface, and the first contact hole 113, first contact hole that it comprises visible ray inductive means and the signal of telecommunication that formed by visible ray inductive means exports is as the first extraction pole; Visible ray inductive means can be PN junction, utilizes photoelectricity transformation principle, forms the induction to visible ray;
Dielectric layer 102, it is positioned on interconnection layer 101;
Groove is arranged in interconnection layer 101 and dielectric layer 102, is filled with the infrared anti-reflection material 112 with round and smooth convex surfaces in a groove; Here, the structure of infrared anti-reflection material 112 is half convex lens structures; Infrared anti-reflection material 112 is silicon, germanium silicon or selenium sulfide.The infrared anti-reflection material of pellicle mirror structure is for strengthening the permeability of incident infrared light and converging incident infrared light, thus make by the infrared light of infrared anti-reflection material can be more converge to together, with strengthen infrared induction structure absorptivity and improve induction sensitivity.
Contact trench structure 103 is formed in the dielectric layer 102 of infrared anti-reflection material 112 both sides; Here, the top of infrared anti-reflection material flushes with dielectric layer top or lower than dielectric layer top, namely infrared anti-reflection material can fill full groove, or infrared anti-reflection material also can not fill full groove.
Infrared induction region IR, be positioned at above wafer 100, comprise infrared induction structure, infrared induction structure in the present embodiment is the micro-bridge structure that top has that concavo-convex contoured surface and edge have the first supported hole 110, the top of micro-bridge structure has the first release aperture K1, micro-bridge structure comprises from the bottom up successively: lower release guard layer 104, infrared-sensitive material layer 105, electrode layer 106 and upper release guard layer 107, and infrared-sensitive material layer 105 is as infrared induction parts here; The top of electrode layer 106 has some grooves, and the top of infrared-sensitive material layer 105 is continuous print flat surfaces, upper release guard layer 107 based on electrode layer 106 shape and form ups and downs top; The part that infrared-sensitive material layer 105 and electrode layer 106 expose covers with lower release guard layer 104 by upper release guard layer 107; The electrode layer 106 be positioned at bottom the first supported hole 110 contacts with contact trench structure 103, exports for the signal of telecommunication produced by infrared-sensitive material layer 105; There is between micro-bridge structure and infrared anti-reflection material 112 first cavity.The interconnection layer of micro-bridge structure top and crystal column surface and infrared anti-reflection material 112 can be kept apart by the first cavity.
Support component 108, is positioned at the periphery of micro-bridge structure, and does not contact with micro-bridge structure, and support component 108 edge has bottom the second supported hole 111, second supported hole 111 and is connected with dielectric layer 102, and support component 108 top has release aperture K2; The inner surface of the inner surface at the top of support component 108 or whole support component 108 has infrared reflective material or whole support component 108 is infrared reflective material; Infrared reflective material, and then to be absorbed by infrared induction parts to infrared induction parts for the infrared light reflection that will absorb without infrared induction parts.There is between support component 108 and micro-bridge structure the second cavity.Second cavity is as resonant cavity.It should be noted that, the cross-sectional structure schematic diagram for device shown in Fig. 1, in whole device, infrared induction structure with there is between support component the space be communicated with, such as, on longitudinal section, the edge of infrared induction structure does not have supported hole, therefore, infrared induction structure has the space be communicated with between this edge with support component.
Converting unit, the signal of telecommunication for visible ray inductive means and infrared induction parts being exported carries out calculating and being converted to image.
Wherein, the material of filling in contact trench structure 103 can be Al or Pt; The material of dielectric layer 102 is the silicon dioxide of silicon dioxide, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, silicon oxynitride, silicon nitride and carborundum, or is mixed with the above-mentioned material of the impurity elements such as boron, phosphorus, carbon or fluorine; The material of upper release guard layer 107 and lower release guard layer 104 can be silicon dioxide (SiO2), silicon oxynitride (Si0N), silicon nitride (SiN), carborundum (SiC) etc. based on Si, 0, the film of the composition such as C, N; also can be the above-mentioned film of non-stoichiometric; the silicon dioxide of such as oxygen enrichment or Silicon-rich; also can be the above-mentioned film being mixed with the elements such as B, P, C or F, such as fluorine silex glass (FSG), Pyrex (BPSG) or phosphorosilicate glass (PSG) etc.Infrared-sensitive material layer 105 and electrode layer 106 surround by upper release guard layer 107 and lower release guard layer 104; in order to when carrying out release process; play the effect of available protecting infrared-sensitive material layer 105 and electrode layer 106; in manufacture process and use procedure, isolate extraneous pollution and damage simultaneously; improve the reliability of the detection of infrared-sensitive material, electrode layer also can be avoided to be short-circuited as electrode.The material of infrared-sensitive material layer 105 can be amorphous silicon or vanadium oxide etc.The material of electrode layer 106 can be titanium, tantalum, the titanium nitride of stacked on top of one another and the tantalum of titanium or stacked on top of one another and tantalum nitride.
Below in conjunction with accompanying drawing 2 and specific embodiment, the preparation method to mixing imaging detector pixel structure of the present invention is described in further detail.It should be noted that, accompanying drawing all adopt simplify very much form, use non-ratio accurately, and only in order to object that is convenient, that clearly reach aid illustration the present embodiment.
In a preferred embodiment of the present invention, refer to Fig. 2, to the preparation method of above-mentioned mixing imaging detector pixel structure, comprise the following steps:
Step 01: provide a wafer, forms visible ray induction region at wafer lower surface;
Concrete, be Silicon Wafer here; Visible ray inductive means in visible ray induction region and the preparation of extraction pole thereof can adopt existing method, and the present invention repeats no more this.
Step 02: form interconnection layer at wafer upper surface;
Concrete, the formation method of interconnection layer can adopt existing technique.
Step 03: form dielectric layer on interconnection layer, etches groove in dielectric layer and interconnection layer, forms the described infrared anti-reflection material with described round and smooth convex surfaces in a groove;
Concrete, can adopt chemical vapor deposition method on interconnection layer, deposit one deck dielectric layer, then, photoetching and etching technics can be adopted, in dielectric layer and interconnection layer, etch groove; Then, gas-phase deposition can be adopted to deposit infrared anti-reflection material in a groove.The top of infrared anti-reflection material flushes with dielectric layer top or lower than dielectric layer top.Here, the structure of infrared anti-reflection material is pellicle mirror structure; The formation of the infrared anti-reflection material of pellicle mirror structure comprises: first, adopts CVD or spin coating proceeding to fill infrared anti-reflection material in a groove, and the top of planarization infrared anti-reflection material; Then, graphical infrared anti-reflection material also only retains the infrared anti-reflection material in groove; Then, by the high-temperature process of laser annealing technique, after cooling, pellicle mirror structure is obtained due to capillary effect.
In another embodiment of the invention, the formation of the infrared anti-reflection material of pellicle mirror structure comprises: first, is filled out fill infrared anti-reflection material in a groove by CVD or spin coating proceeding, and the top of planarization infrared anti-reflection material; Then, graphical infrared anti-reflection material also only retains the infrared anti-reflection material in groove; Then, utilize GTG photolithography plate figure, namely photolithography plate figure iuuminting Xing You center reduces gradually to surrounding, is formed and has semi-transparent specular photoetching offset plate figure, then, forms pellicle mirror structure through etching technics.
Step 04: form contact trench structure in the dielectric layer of infrared anti-reflection material both sides;
Concrete, Damascus technics can be adopted to form contact trench structure, be included in filled conductive metal material in contact trench structure, then adopt cmp by the planarization of conductive metallic material top surface, be beneficial to the deposition of follow-up first sacrificial layer material and be conducive to obtaining the first smooth sacrificial layer material surface.
Step 05: form the first sacrifice layer on contact trench structure, dielectric layer and infrared anti-reflection material;
Concrete, chemical vapor deposition method or coating can be adopted to form the first sacrifice layer;
Step 06: form the first groove in the first sacrifice layer corresponding to contact trench superstructure; First channel bottom exposes the surface of contact trench structure;
Concrete, in order to follow-up formation first supported hole during the formation of the first groove.Photoetching and etching technics can be adopted to form the first groove.
Step 07: form infrared induction structure on first sacrifice layer with the first groove, then form the first release aperture in infrared induction structural top; Wherein, the electrode layer bottom the first supported hole is connected with contact trench structure;
Concrete, in the present embodiment, the top of micro-bridge structure has concavo-convex contoured surface and edge has the first supported hole; In micro-bridge structure, infrared induction parts are infrared-sensitive material layer; Electrode layer is positioned at infrared-sensitive material layer upper surface, and the top of electrode layer has some grooves, and the top of infrared-sensitive material layer is continuous print flat surfaces, and the preparation method of this micro-bridge structure comprises:
Step 071: release guard layer under deposition on the first sacrifice layer and in the first supported hole, etch lower release guard layer pattern, eating away is positioned at the lower release guard layer segment bottom the first supported hole in the same time, exposes electrode layer;
Step 072: with the electrode layer surface deposition infrared-sensitive material exposed on lower release guard layer, etch infrared-sensitive material layer pattern, eating away is positioned at the infrared-sensitive material layer segment bottom the first supported hole in the same time;
Step 073: at infrared-sensitive material layer surface and the first supported hole bottom deposit metal material, and etch pattern, form multiple groove simultaneously in metal material, thus form electrode layer; Infrared-sensitive material layer comes out by multiple bottom portion of groove of electrode layer; The both ends of infrared-sensitive material layer and the both ends of electrode layer respectively correspondence flush.
Step 074: form release guard layer on the infrared-sensitive material layer surface of electrode layer and exposure.
In other embodiments of the invention, in micro-bridge structure, electrode layer is positioned at infrared-sensitive material layer lower surface, and the top of electrode layer has some grooves, and the top of infrared-sensitive material layer is the concavo-convex contoured surface of continuous print, and the preparation method of this micro-bridge structure comprises:
Step 071: release guard layer under deposition on the first sacrifice layer and in the first supported hole, etch lower release guard layer pattern, eating away is positioned at the lower release guard layer segment bottom the first supported hole in the same time, exposes electrode layer;
Step 072: with the electrode layer surface deposition of electrode material exposed on lower release guard layer, and etch electrode layer pattern, form multiple groove simultaneously in electrode material, thus form electrode layer; Lower release guard layer comes out by multiple bottom portion of groove of electrode layer;
Step 073: release guard layer surface deposition infrared-sensitive material under the part of electrode layer surface and exposure, etches infrared-sensitive material layer pattern, thus form infrared-sensitive material layer; The both ends of infrared-sensitive material layer flush with the both ends of electrode layer are corresponding respectively;
Step 074: form release guard layer on infrared-sensitive material layer surface.
Step 08: form the second sacrifice layer on the wafer of completing steps 07;
Concrete, the formation of the second sacrifice layer can be, but not limited to adopt coating or other chemical vapor deposition methods.The material of the second sacrifice layer is identical with the material of the first sacrifice layer.
Step 09: form the second groove in corresponding to the second sacrifice layer above the dielectric layer outside contact trench structure; Second channel bottom exposes the surface of dielectric layer;
Concrete, in order to follow-up formation second supported hole during the formation of the second groove.Photoetching and etching technics can be adopted to form the second groove.
Step 10: form support component on second sacrifice layer with the second groove, form the second release aperture at support component top;
Concrete, in the present embodiment, infrared reflective material layer can be adopted to reflect the infrared light absorbed without infrared-sensitive material layer, infrared-sensitive material layer is absorbed it, thus thoroughly absorb incident infrared light, preferably, the inner surface of the inner surface at support component top or whole support component has infrared reflective material layer; First, second sacrifice layer with the second groove forms infrared reflective material, or form infrared reflective material at the top of second sacrifice layer with the second groove, then deposit one deck support component at infrared reflective material layer and the second sacrificial layer surface of not being blocked; Or whole support component can be infrared reflective material.
Step 11: carry out release process by the space of the connection between support component and infrared induction structure, the first release aperture and the second release aperture, the first sacrifice layer and the second sacrifice layer are discharged, thus form the first cavity and the second cavity.
Concrete, when the material of the first sacrifice layer and the second sacrifice layer is amorphous silicon, then adopt XeF
2as release gas, the first sacrifice layer and the second sacrifice layer are removed, now, the material of upper release guard layer and lower release guard layer is the composite material of titanium dioxide Silicified breccias.In another embodiment of the invention; when the first sacrificial layer material and the second sacrificial layer material are silica; gaseous hydrogen fluoride can be adopted as release gas; the first whole sacrificial layer material and the second sacrificial layer material are removed; now, the material of upper release guard layer and lower release guard layer is silicon nitride or silicon etc.In another embodiment of the present invention, when the first sacrificial layer material and the second sacrificial layer material are organic substance, such as photoresist, polyimides, can adopt O
2as release gas, the first whole sacrificial layer material and the second sacrificial layer material are removed, now, the material of upper release guard layer and lower release guard layer is all inorganic material.
In sum, mixing imaging detector pixel structure of the present invention and preparation method thereof, by visible ray induction region and infrared induction regional ensemble in the chips, infrared anti-reflection material is formed by the crystal column surface below infrared induction parts and above visible ray inductive means, add the filtration of wafer to visible ray itself, the ratio that infrared light enters micro-bridge structure can be improved, and then improve the image quality of infrared induction part, and make to be mixed into outside visible red that picture is microminiaturized, chip becomes possibility.
Although the present invention discloses as above with preferred embodiment; right described embodiment is citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a mixing imaging detector pixel structure, is characterized in that, comprising:
One wafer, as visible ray filter course;
To lay respectively at above described wafer and the infrared induction region of lower surface and visible ray induction region; And
The signal of telecommunication for described visible ray induction region and described infrared induction region being exported carries out calculating and is converted to the converting unit of image; Wherein,
Visible ray induction region, is positioned at described wafer lower surface, the extraction pole that it comprises visible ray inductive means and the signal of telecommunication that formed by described visible ray inductive means exports;
Interconnection layer, is positioned at described wafer upper surface;
Dielectric layer, is positioned at the upper surface of described interconnection layer;
Groove, is arranged in described interconnection layer and described dielectric layer, and corresponds to above described visible ray inductive means;
Infrared anti-reflection material, is filled in described groove, has round and smooth convex surfaces, for strengthening the permeability of incident infrared light and converging incident infrared light;
Contact trench structure, is arranged in the described dielectric layer of described infrared anti-reflection material both sides;
Infrared induction region, be positioned at described infrared anti-reflection material and described contact trench superstructure, it comprises infrared induction structure; Described infrared induction structure comprises: lower release guard layer, infrared induction parts, electrode layer and upper release guard layer; Described infrared induction parts correspond to the top of described infrared anti-reflection material, for absorbing infrared light, and produce the signal of telecommunication; The edge of described infrared induction structure has the first supported hole, described contact trench structure upper surface is positioned at bottom described first supported hole, and the described electrode layer bottom described first supported hole is connected with described contact trench structure, export for the signal of telecommunication that described infrared induction parts are produced; The top of described infrared induction structure has the first release aperture; Between described infrared induction structure and described infrared anti-reflection material, there is the first cavity;
Support component, is positioned at the periphery of described infrared induction structure, and does not contact with described infrared induction structure, and described support component edge has the second supported hole, and be positioned at described dielectric layer upper surface bottom described second supported hole, its top has the second release aperture; There is between described support component and described micro-bridge structure the second cavity, and infrared induction structure with there is between support component the space be communicated with;
Wherein, visible ray and infrared light are injected from described wafer lower surface, and by described visible ray induction region, the described visible ray of part is absorbed by described visible ray induction region; Then, filter out not by the visible ray of described visible ray induction region absorption through described wafer, infrared light incides to absorb and produce the signal of telecommunication on described infrared induction parts and by described infrared induction parts and is transported to described converting unit after described infrared anti-reflection material, thus generates the outer vision-mix of visible red.
2. mixing imaging detector pixel structure according to claim 1, is characterized in that, the structure of described infrared anti-reflection material is pellicle mirror structure.
3. mixing imaging detector pixel structure according to claim 1, is characterized in that, described infrared anti-reflection material is silicon, germanium silicon or selenium sulfide.
4. mixing imaging detector pixel structure according to claim 1, is characterized in that, the top of described infrared anti-reflection material flushes with described dielectric layer top or lower than described dielectric layer top.
5. the mixing imaging detector pixel structure according to claim 1-4 any one, it is characterized in that, there is infrared reflective material layer or whole described support component is infrared reflective material at the inner surface at described support component top or the whole inner surface of described support component, described infrared reflective material, and then to be absorbed by described infrared induction parts to described infrared induction parts for the infrared light reflection that will do not absorbed by described infrared induction parts.
6. a preparation method for mixing imaging detector pixel structure according to claim 1, is characterized in that, comprise the following steps:
Step 01: provide a wafer, forms described visible ray induction region at described wafer lower surface;
Step 02: form described interconnection layer at described wafer upper surface;
Step 03: form described dielectric layer on described interconnection layer, etches described groove in described dielectric layer and described interconnection layer, forms the described infrared anti-reflection material with described round and smooth convex surfaces in described groove;
Step 04: form described contact trench structure in the described dielectric layer of described infrared anti-reflection material both sides;
Step 05: form the first sacrifice layer on described contact trench structure, described dielectric layer and described infrared anti-reflection material;
Step 06: form the first groove in described first sacrifice layer corresponding to described contact trench superstructure; Described first channel bottom exposes the surface of described contact trench structure;
Step 07: form described infrared induction structure on described first sacrifice layer with described first groove, then form the first release aperture in described infrared induction structural top; Wherein, the described electrode layer bottom described first supported hole is connected with described contact trench structure;
Step 08: form the second sacrifice layer on the described wafer completing described step 07;
Step 09: form the second groove in corresponding to described second sacrifice layer above the described dielectric layer outside described contact trench structure; Described second channel bottom exposes the surface of described dielectric layer;
Step 10: form described support component on described second sacrifice layer with described second groove, form the second release aperture at described support component top;
Step 11: carry out release process by the space of the described connection between described support component and described infrared induction structure, described first release aperture and described second release aperture, described first sacrifice layer and described second sacrifice layer are discharged, thus forms described first cavity and described second cavity.
7. preparation method according to claim 6, is characterized in that, the structure of described infrared anti-reflection material is pellicle mirror structure; The formation of the described infrared anti-reflection material of described pellicle mirror structure comprises: first, adopts CVD or spin coating proceeding in described groove, fill described infrared anti-reflection material, and the top of infrared anti-reflection material described in planarization; Then, graphical described infrared anti-reflection material also only retains the described infrared anti-reflection material in described groove; Then, by high-temperature process, after cooling, described pellicle mirror structure is obtained.
8. preparation method according to claim 7, is characterized in that, described high-temperature process is laser annealing technique.
9. preparation method according to claim 6, is characterized in that, the structure of described infrared anti-reflection material is pellicle mirror structure; The formation of the described infrared anti-reflection material of described pellicle mirror structure comprises: first, is filled out fill described infrared anti-reflection material by CVD or spin coating proceeding in described groove, and the top of infrared anti-reflection material described in planarization; Then, graphical described infrared anti-reflection material also only retains the described infrared anti-reflection material in described groove; Then, utilize GTG photolithography plate figure, namely described photolithography plate figure iuuminting Xing You center reduces gradually to surrounding, is formed and has semi-transparent specular photoetching offset plate figure, then, forms described pellicle mirror structure through etching technics.
10. preparation method according to claim 6, it is characterized in that, in described step 10, before the described support component of formation, also comprise: on described second sacrifice layer with described second groove, form infrared reflective material, or form described infrared reflective material at the top of described second sacrifice layer with described second groove.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108225576A (en) * | 2017-12-14 | 2018-06-29 | 上海集成电路研发中心有限公司 | A kind of infrared detector and its manufacturing method |
| CN114050168A (en) * | 2022-01-13 | 2022-02-15 | 中国人民解放***箭军工程大学 | Medical imaging-oriented semiconductor silicon-based hybrid imaging chip and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| CN101738658A (en) * | 2008-11-20 | 2010-06-16 | 采钰科技股份有限公司 | Optical element and manufacture method thereof, and image pick-up device |
| US20130248686A1 (en) * | 2012-03-26 | 2013-09-26 | Shigeru Tohyama | Solid-state image sensing device and method of manufacturing the same |
-
2015
- 2015-08-31 CN CN201510547799.0A patent/CN105161508B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| CN101738658A (en) * | 2008-11-20 | 2010-06-16 | 采钰科技股份有限公司 | Optical element and manufacture method thereof, and image pick-up device |
| US20130248686A1 (en) * | 2012-03-26 | 2013-09-26 | Shigeru Tohyama | Solid-state image sensing device and method of manufacturing the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108225576A (en) * | 2017-12-14 | 2018-06-29 | 上海集成电路研发中心有限公司 | A kind of infrared detector and its manufacturing method |
| CN114050168A (en) * | 2022-01-13 | 2022-02-15 | 中国人民解放***箭军工程大学 | Medical imaging-oriented semiconductor silicon-based hybrid imaging chip and preparation method thereof |
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