CN105161403A - Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method - Google Patents
Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method Download PDFInfo
- Publication number
- CN105161403A CN105161403A CN201510477068.3A CN201510477068A CN105161403A CN 105161403 A CN105161403 A CN 105161403A CN 201510477068 A CN201510477068 A CN 201510477068A CN 105161403 A CN105161403 A CN 105161403A
- Authority
- CN
- China
- Prior art keywords
- cavity
- effect problem
- gas
- gas purging
- eliminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a method for eliminating a first sheet effect problem caused by cavity idling by adopting a gas purging method, and mainly solves the problem in a plasma chemical vapor deposition production process that when a plurality of cavities carry out sheet production, one of the cavities is idle because of the scheduling problem of a manipulator, thereby leading to the first sheet effect problem. The method is characterized in that a certain amount of gas is intermittently input into the cavity when the cavity is idle, and the heat conduction between a heating disk and a spraying plate is enhanced, so that a stable state of the cavity is maintained, and the first sheet effect is eliminated. The method comprises the steps of: 1) temperature controlling of an objective table; 2) technology pre-processing; 3) cavity idling; 4) intermittent gas feeding; 5) technology pre-processing; and 6) technology sheet deposition. According to the invention, the first sheet effect caused by the cavity idling is simply and effectively eliminated in the plasma chemical vapor deposition production process. The method provided by the invention can be widely applied to the technical field of semiconductor film manufacturing and application.
Description
Technical field
The invention provides a kind of method eliminating the first effect that the cavity free time produces, it is exactly a kind of first effect problem adopting gas purging method to eliminate the generation of cavity free time, be mainly used in eliminating the first effect caused because cavity is idle in plasma enhanced chemical vapor deposition process, belong to semiconductive thin film manufacture and applied technical field.
Background technology
Plasma activated chemical vapour deposition mainly utilizes microwave radio etc. to make gas ionization, forms plasma, thus form film on substrate.The stability of film performance is most important to follow-up technique, all parts is needed to play ideal role, but when multiple chamber co-production, due to the scheduling problem of manipulator, respective cavity can be made to produce idle, can cause producing former flake products, the thickness of film in production process subsequently, uniformities etc. depart from desirable level, produce " first effect ".First effect Producing reason is mainly after the cavity free time, and shower plate temperature is lower, when starting to deposit, causes deposition rate to decline, and when starting to deposit, shower plate may be heated uneven, causes the uniformity of film poor.Therefore need to develop a kind of new technical method and eliminate the first effect caused because cavity is idle
Summary of the invention
The present invention, for the purpose of solving the problem, mainly solves in plasma activated chemical vapour deposition production process, when multiple cavity carries out race sheet, due to the problem of dispatching mechanical hand, causes wherein certain cavity idle, thus the problem of the first effect caused.
For achieving the above object, the present invention adopts following technical proposals: adopt gas purging method to eliminate the first effect problem of cavity free time generation, its method be cavity free time have a rest pass into certain gas, strengthen the heat transfer between heating plate and shower plate, thus keep a kind of stable state of cavity, eliminate first effect.
Concrete grammar is realized by following steps:
1) objective table temperature control: bottom electrode is by the accurate control temperature of thermocouple;
2) technique pre-treatment: deposit in chamber, etching operation;
3) cavity is idle: because dispatching mechanical hand occurs that chamber is idle;
4) interval ventilation: interval passes into gas from the top electrode of reaction chamber;
5) technique pre-treatment: deposit in chamber, etching operation;
6) deposition of technique sheet.
Further, described step 4), it is characterized in that: the gas that interval passes into is N2;
Further, described step 4), it is characterized in that: the gas flow that interval passes into is 3000-6000sccm;
Further, described step 4), it is characterized in that: in venting process, control reaction chamber pressure by butterfly valve (TV valve), reaction pressure can by 1-9Torr;
Further, described step 4), it is characterized in that: moving up and down by objective table, control the distance between upper/lower electrode, control at 6-12mm;
Further, described step 4), it is characterized in that: the frequency of the gas that interval passes into is 1-10 time/10min;
Beneficial effect of the present invention and feature:
The present invention can eliminate in plasma activated chemical vapour deposition production process simply and effectively, the first effect that the free time due to cavity causes.Semiconductive thin film manufacture and applied technical field can be widely used in.
Accompanying drawing explanation
After Fig. 1 gives the cavity free time, the film thickness data of collection.
After Fig. 2 gives and adopts the present invention to process in cavity idle process, the film thickness data of collection.
Embodiment
Embodiment
The process data provided below in conjunction with Fig. 1-2 is described.According to the following describes, advantages and features of the invention will be clearer.It should be noted that, embodiment accompanying drawing used all adopts reduced graph, so that the explanation explanation of additional embodiments.
Example of the present invention illustrates with silicon oxide film at 400 DEG C, and concrete steps are as follows:
1) deposition chambers objective table and heating plate temperature are 400 DEG C, and its control mode is by thermocouple Real-Time Monitoring and control temperature, and accuracy rating is ± 0.75%;
2) in the chamber at the linerless end, adopt deposition before starting technique, the operation of etching carries out pre-treatment to cavity, for preheating cavity state;
3) cavity is idle, while the free time, adopt that the present invention is step passes into 3000-6000sccmN2, passing into frequency is 1-10min/ time, in venting process, control reaction chamber pressure by butterfly valve (TV valve), reaction pressure controls as 1-9Torr, by moving up and down of objective table, control the distance between upper/lower electrode, control at 6-12mm;
4) before starting technique, cavity is deposited, the pre-treatment of etching;
5) deposit, when deposition substrate enters reaction chamber, stage position is in initial position, in venting process, objective table moves upward, by the distance controlling between objective table and electrode at desired location, this distance is the spacing in deposition process, on aeration step basis, film deposition process by radio system provides radio frequency, radio frequency makes each reacting gas dissociate and produces plasma (ionization), gas molecule is produced active atomic radical by electronic impact major part dissociation in the plasma, atom and ion, then these active particles form film in substrate surface condensation.
What Fig. 1 provided is do not adopt any operation, the thickness of the film of the deposition of collection when cavity is idle, and wherein abscissa represents the quantity of the monitoring sheet of chamber deposition, and ordinate represents the thickness of deposit film.As seen from Figure 1, after cavity idle a period of time, carry out the deposition of technique, the trend that film thickness becomes to increase progressively, first differs with the 4th
, there is first effect in left and right, this effect can cause the yield in later stage processing procedure process to decline.
What Fig. 2 provided is cavity is when the free time, and adopt the present invention, interval passes into the film thickness that N2 gathers, and as seen from Figure 2, after application the present invention, the thickness of film is very stable, does not occur first effect.
Claims (6)
1. adopt gas purging method to eliminate the first effect problem of cavity free time generation, it is characterized in that: the method is realized by following step:
1) objective table temperature control: bottom electrode is by the accurate control temperature of thermocouple;
2) technique pre-treatment: deposit in chamber, etching operation;
3) cavity is idle: because dispatching mechanical hand occurs that chamber is idle;
4) interval ventilation: interval passes into gas from the top electrode of reaction chamber;
5) technique pre-treatment: deposit in chamber, etching operation;
6) deposition of technique sheet.
2. adopt gas purging method to eliminate first effect problem that the cavity free time produces as claimed in claim 1, is characterized in that: described step 4) gas that passes into of discontinuous is N2.
3. adopt gas purging method to eliminate first effect problem that the cavity free time produces as claimed in claim 1, is characterized in that: described step 4) gas flow that passes into of interval is 3000-6000sccm.
4. the first effect problem adopting gas purging method to eliminate the generation of cavity free time as claimed in claim 1, is characterized in that: described step 4) in venting process, control reaction chamber pressure by butterfly valve, reaction pressure is by 1-9Torr.
5. the first effect problem adopting gas purging method to eliminate the generation of cavity free time as claimed in claim 1, is characterized in that: described step 4) moving up and down by objective table, control the distance between upper/lower electrode, control at 6-12mm.
6. adopt gas purging method to eliminate first effect problem that the cavity free time produces as claimed in claim 1, is characterized in that: described step 4) frequency of gas that passes into of interval is 1-10 time/10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510477068.3A CN105161403A (en) | 2015-08-06 | 2015-08-06 | Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510477068.3A CN105161403A (en) | 2015-08-06 | 2015-08-06 | Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105161403A true CN105161403A (en) | 2015-12-16 |
Family
ID=54802223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510477068.3A Pending CN105161403A (en) | 2015-08-06 | 2015-08-06 | Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161403A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109628911A (en) * | 2018-12-25 | 2019-04-16 | 江苏鲁汶仪器有限公司 | A method of eliminating first effect of plasma chemical vapor deposition |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050252529A1 (en) * | 2004-05-12 | 2005-11-17 | Ridgeway Robert G | Low temperature CVD chamber cleaning using dilute NF3 |
| CN101092691A (en) * | 2006-06-05 | 2007-12-26 | 应用材料公司 | Elimination of first wafer effect for pecvd films |
| CN101476114A (en) * | 2009-01-23 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pretreatment method for plasma apparatus cavity maintenance |
| CN101562122A (en) * | 2008-04-16 | 2009-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry etching method and silicon wafer etching method |
| CN101685771A (en) * | 2008-09-22 | 2010-03-31 | 台湾积体电路制造股份有限公司 | Method for pre-conditioning and stabilizing an etching chamber and method for cleaning an etching chamber |
| CN102921680A (en) * | 2011-08-09 | 2013-02-13 | 无锡华润上华科技有限公司 | Method for cleaning chemical vapor deposition (CVD) reaction cavity |
-
2015
- 2015-08-06 CN CN201510477068.3A patent/CN105161403A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050252529A1 (en) * | 2004-05-12 | 2005-11-17 | Ridgeway Robert G | Low temperature CVD chamber cleaning using dilute NF3 |
| CN101092691A (en) * | 2006-06-05 | 2007-12-26 | 应用材料公司 | Elimination of first wafer effect for pecvd films |
| CN101562122A (en) * | 2008-04-16 | 2009-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry etching method and silicon wafer etching method |
| CN101685771A (en) * | 2008-09-22 | 2010-03-31 | 台湾积体电路制造股份有限公司 | Method for pre-conditioning and stabilizing an etching chamber and method for cleaning an etching chamber |
| CN101476114A (en) * | 2009-01-23 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pretreatment method for plasma apparatus cavity maintenance |
| CN102921680A (en) * | 2011-08-09 | 2013-02-13 | 无锡华润上华科技有限公司 | Method for cleaning chemical vapor deposition (CVD) reaction cavity |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109628911A (en) * | 2018-12-25 | 2019-04-16 | 江苏鲁汶仪器有限公司 | A method of eliminating first effect of plasma chemical vapor deposition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107546106B (en) | Tin oxide thin film spacer in semiconductor device fabrication | |
| TWI725000B (en) | Method and apparatus for rf compensation in plasma assisted atomic layer deposition | |
| US11286560B2 (en) | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching | |
| TW200733196A (en) | Vaporizer, semiconductor manufacturing apparatus and manufacturing method thereof | |
| JP2018152560A (en) | Selective deposition of silicon nitride on silicon oxide using catalyst control | |
| CN103199007A (en) | Metal hard mask fabrication | |
| CN104851796A (en) | High growth rate process for conformal aluminum nitride | |
| CN107818940B (en) | Electrostatic chuck device and temperature control method thereof | |
| CN105161403A (en) | Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method | |
| CN113544310B (en) | Film formation by pulsed RF plasma | |
| CN102011105B (en) | Process for depositing silica at low pressure | |
| MY152036A (en) | Thin-film deposition and recirculation of a semi-conductor material | |
| CN109148263A (en) | The film build method of deposited amorphous silicon | |
| CN103397308A (en) | Spray head used for MOCVD equipment | |
| CN106555168A (en) | A kind of method that cryogenic oxidation silicon film performance is improved by adjustment nitrogen flow | |
| JP4979633B2 (en) | Semiconductor device manufacturing method and cleaning method, and semiconductor device manufacturing apparatus | |
| WO2020096722A1 (en) | Nitride films with improved etch selectivity for 3d nand integration | |
| CN106282965B (en) | The plasma reinforced chemical vapour deposition method of silicon chip of solar cell | |
| CN104617185B (en) | A kind of preparation method of the siliceous quantum dot thin-film material being substrate with textured mono-crystalline silicon sheet | |
| US11961716B2 (en) | Atomic layer deposition method | |
| WO2022141354A1 (en) | Method for forming copper metal layer, and semiconductor structure | |
| CN105140422A (en) | Method for low-temperature deposition of silicon nitride film | |
| US12040180B2 (en) | Nitride films with improved etch selectivity for 3D NAND integration | |
| WO2017031822A1 (en) | Application of novel temperature control system in preparation of low-temperature thin film | |
| JP2002343784A (en) | Method for manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151216 |