CN105159002A - Pixel structure - Google Patents
Pixel structure Download PDFInfo
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- CN105159002A CN105159002A CN201510705099.XA CN201510705099A CN105159002A CN 105159002 A CN105159002 A CN 105159002A CN 201510705099 A CN201510705099 A CN 201510705099A CN 105159002 A CN105159002 A CN 105159002A
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- electrode
- dot structure
- electrically connected
- sharing
- pixel electrode
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- 239000003990 capacitor Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 21
- 239000007769 metal material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 101150018444 sub2 gene Proteins 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 101150075118 sub1 gene Proteins 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a pixel structure which comprises a scanning line, a data line, a sharing signal line, an active element, a first pixel electrode, a second pixel electrode, a sharing switch element, a first sharing capacitor and a second sharing capacitor. The sharing signal line is arranged in parallel with the scanning line. The first pixel electrode is electrically connected with the active element. The second pixel electrode is separated from the first pixel electrode and electrically connected with the active element. The sharing switch element is electrically connected with the sharing signal line and the active element. The first sharing capacitor includes an upper electrode and a lower electrode, which are disposed to overlap each other. The upper electrode is electrically connected to the sharing switch element. The second sharing capacitor includes a first electrode and a second electrode, which are disposed to overlap each other. The first electrode is electrically connected to the first pixel electrode, and the second electrode is electrically connected to the sharing switch element.
Description
Technical field
The invention relates to a kind of dot structure, and relate to a kind of dot structure of display panel especially.
Background technology
Along with the progress on photoelectricity and semiconductor technology, it has driven the flourish of flat-panel screens.In many flat-panel screens, liquid crystal display, due to because having the advantageous characteristic such as high spatial utilization ratio, low consumpting power, radiationless and low EMI, thus becomes the main flow in market.At present, liquid crystal display possesses the characteristic of wide viewing angle usually when display frame, to meet the demand that multidigit user watches same display device simultaneously.But colour cast (colorwashout) phenomenon existing for display possessing wide viewing angle characteristic is also for This is what people generally disapprove of.In order to solve the problem of colour cast, the design of the dot structure in prior art can reduce the aperture opening ratio (apertureratio) of display panel or bring the problem (imagesticking) of image residue.Therefore, how to overcome the problems referred to above and to take into account display aperture opening ratio and wide viewing angle display effect, by present the theme of wish research.
Summary of the invention
The invention provides a kind of dot structure, can in order to solve the problem of colour cast and image residue, and display aperture opening ratio can be improved simultaneously and take into account the display effect of wide viewing angle.
Dot structure of the present invention comprises sweep trace, data line, sharing signal line, active member, the first pixel electrode, the second pixel electrode, shares on-off element, the first sharing capacitor and the second sharing capacitor.Sharing signal line parallel is arranged in sweep trace.Active member is electrically connected with sweep trace and data line.First pixel electrode is electrically connected with active member.Second pixel electrode is separated with the first pixel electrode and is electrically connected with active member.Share on-off element to be electrically connected with sharing signal line and active member.First sharing capacitor comprises top electrode and bottom electrode.Top electrode and bottom electrode overlap each other setting, wherein, top electrode with share on-off element and be electrically connected.Second sharing capacitor comprises the first electrode and the second electrode.First electrode and the second electrode overlap each other setting, and wherein, the first electrode is electrically connected with the first pixel electrode, and the second electrode with share on-off element and be electrically connected.
Based on above-mentioned, dot structure of the present invention includes top electrode and bottom electrode and to overlap each other the first sharing capacitor arranged, and the first electrode and the second electrode overlap each other the second sharing capacitor arranged.Therefore, dot structure of the present invention can in order to solve the problem of colour cast and image residue, and can improve display aperture opening ratio simultaneously and take into account the display effect of wide viewing angle.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate institute's accompanying drawings to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the diagrammatic cross-section of the display panel of one embodiment of the invention.
Fig. 2 is the dot structure schematic diagram of one embodiment of the invention.
Fig. 3 is the dot structure schematic diagram of another embodiment of the present invention.
[symbol description]
100: display panel
110: image element array substrates
120: subtend substrate
130: display medium
200,300: dot structure
Sub1, Sub2: substrate
PA: pel array
EL: electrode layer
SP: separation material
SL: sweep trace
DL: data line
SgL: sharing signal line
TFT: active member
G, Ga: grid
S, Sa: source electrode
Da: drain electrode
D1: the first drain electrode
D2: the second drain electrode
PE1: the first pixel electrode
PE2: the second pixel electrode
CW1: the first contact hole
CW2: the second contact hole
SWE: share on-off element
SC1: the first sharing capacitor
SC2: the second sharing capacitor
TE: top electrode
BE: bottom electrode
FE: the first electrode
SE: the second electrode
TdE: the three electrode
CEP: common electrode pattern
EP: extension
Embodiment
Fig. 1 is the diagrammatic cross-section of the display panel of one embodiment of the invention.Please refer to Fig. 1, display panel 100 comprises image element array substrates 110, subtend substrate 120 and display medium 130.Display panel 100 is such as display panels or other forms of display panel.
Image element array substrates 110 comprises substrate sub1 and pel array PA.The material of substrate sub1 can be glass, quartz, organic polymer or metal etc.Pel array PA is configured on substrate sub1, and pel array PA comprises multiple dot structure.Design about dot structure will in describing in detail hereinafter.
Subtend substrate 120 is positioned at the subtend of image element array substrates 110.Subtend substrate 120 comprises substrate sub2 and electrode layer EL.The material of substrate sub2 can be glass, quartz or organic polymer etc.Electrode layer EL is covered on substrate sub2 all sidedly.Electrode layer EL is transparency conducting layer, and its material comprises metal oxide, such as, be indium tin oxide or indium-zinc oxide.
Display medium 130 is between image element array substrates 110 and subtend substrate 120.When display panel 100 is display panels, display medium 130 is such as liquid crystal molecule.Multiple separation material SP is provided with between image element array substrates 110 and subtend substrate 120.Separation material SP contacts to maintain suitable cell gap with image element array substrates 110 and subtend substrate 120.Particularly, separation material SP is arranged in each dot structure of pel array PA.
Fig. 2 is the dot structure schematic diagram of one embodiment of the invention.In order to clearly embodiments of the invention are described, Fig. 2 only shows one of them dot structure of the pel array PA of Fig. 1, these those skilled in the art should be appreciated that in fact namely the pel array PA of Fig. 1 forms array format by the dot structure shown in multiple Fig. 2 and formed.Please refer to Fig. 2, dot structure 200 comprises sweep trace SL, data line DL, sharing signal line SgL, active member TFT, the first pixel electrode PE1, the second pixel electrode PE2, shares on-off element SWE, the first sharing capacitor SC1 and the second sharing capacitor SC2.
In the present embodiment, sweep trace SL and data line DL hands over each other and more arranges.In other words, the bearing of trend of sweep trace SL and the bearing of trend of data line DL not parallel, it is preferred that the bearing of trend of sweep trace SL is vertical with the bearing of trend of data line DL.In addition, sharing signal line SgL is parallel to sweep trace SL and arranges.Considering based on electric conductivity, sweep trace SL, data line DL and sharing signal line SgL use metal material.So, the present invention is not limited thereto, according to other embodiments, sweep trace SL, data line DL and sharing signal line SgL also can use other conductive materials.Such as: the oxides of nitrogen of the nitride of alloy, metal material, the oxide of metal material, metal material or the stack layer of metal material and other conductive materials or other suitable materials.In addition, shielding pattern layer (not illustrating) corresponds to sweep trace SL and data line DL to arrange, and in order to prevent light leak.
Active member TFT can be bottom grid film transistor or top gate-type thin film transistor.Active member TFT is electrically connected with sweep trace SL and data line DL.Active member TFT comprises grid G, source S, the first drain D 1, second drain D 2 and passage (not illustrating).Grid G is connected with sweep trace SL, and source S is positioned at above grid G.The corresponding source S of first drain D 1 is arranged, and is electrically connected with the first pixel electrode PE1.The corresponding source S of second drain D 2 is arranged, and is electrically connected with the second pixel electrode PE2.In the present embodiment, the first pixel electrode PE1 and the second pixel electrode PE2 represents with block type electrode, but is not limited thereto.For example, the first pixel electrode PE1 and the second pixel electrode PE2 can also be the electrode with slit pattern.
First pixel electrode PE1 is electrically connected with active member TFT.Particularly, the first contact hole CW1 is electrically connected with between the first pixel electrode PE1 in first drain D 1 of active member TFT both making.Second pixel electrode PE2 separates with the first pixel electrode PE1 and is electrically connected with active member TFT.Particularly, the second contact hole CW2 is electrically connected with between the second pixel electrode PE2 in second drain D 2 of active member TFT both making, and wherein, the first contact hole CW1 and the second contact hole CW2 is positioned at the same side of sweep trace SL.In addition, the first contact hole CW1 and the second contact hole CW2 is between sweep trace SL and sharing signal line SgL.Moreover the first pixel electrode PE1 and sharing signal line SgL partly overlaps, and the second pixel electrode PE2 and sweep trace SL partly overlaps.
In the present embodiment, share on-off element SWE to be electrically connected with sharing signal line SgL and active member TFT.Share on-off element SWE and comprise grid G a, source S a, drain D a and passage (not illustrating).
First sharing capacitor SC1 comprises top electrode TE and bottom electrode BE.Top electrode TE and bottom electrode BE overlaps each other setting, wherein, top electrode TE with share on-off element SWE and be electrically connected.In addition, separation material SP is the top that correspondence is arranged on the first sharing capacitor SC1, therefore can reach joint space-efficient advantage.
Second sharing capacitor SC2 comprises the first electrode FE and the second electrode SE, the setting and the first electrode FE and the second electrode SE overlaps each other.First electrode FE is electrically connected with the first pixel electrode PE1, and the first electrode FE and the first pixel electrode PE1 can be same layer.Second electrode SE with share on-off element SWE and be electrically connected.In addition, the second sharing capacitor SC2 more comprises the 3rd electrode TdE.3rd electrode TdE and the second electrode SE overlaps.3rd electrode TdE is electrically connected with sweep trace SL, and the 3rd electrode TdE and sweep trace SL can be same layer.
In the present embodiment, dot structure 200 also comprises common electrode pattern CEP and the first pixel electrode PE1 and the second pixel electrode PE2 and overlaps, to form the first reservior capacitor and the second reservior capacitor.In addition, the bottom electrode BE of the first sharing capacitor SC1 is connected with common electrode pattern CEP, and bottom electrode BE and common electrode pattern CEP can be same layer.From the above, in dot structure 200, the design of the first sharing capacitor SC1 and the second sharing capacitor SC2 can in order to solve the problem of colour cast and image residue, and can improve display aperture opening ratio simultaneously and take into account the display effect of wide viewing angle.
Fig. 3 is the dot structure schematic diagram of another embodiment of the present invention.Then, please refer to Fig. 3 to be described.The dot structure 300 of Fig. 3 is similar with the dot structure 200 of Fig. 2, and therefore similar elements represents with identical label, and it will not go into details.The dot structure 300 of Fig. 3 is with the difference of the dot structure 200 of Fig. 2, and the second sharing capacitor SC2 of dot structure 300 does not comprise the 3rd electrode TdE.Relative, the second electrode SE of the second sharing capacitor of dot structure 300 also comprises extension EP, and extension EP and sweep trace SL overlaps.From the above, in dot structure 300, the design of the first sharing capacitor SC1 and the second sharing capacitor SC2 can in order to solve the problem of colour cast and image residue, and can improve display aperture opening ratio simultaneously and take into account the display effect of wide viewing angle.
In sum, present invention pixel structure include top electrode TE and bottom electrode BE overlap each other arrange the first sharing capacitor SC1, and the first electrode FE and the second electrode SE overlap each other arrange the second sharing capacitor SC2.In addition, the first pixel electrode PE1 and sharing signal line SgL partly overlaps, and the second pixel electrode PE2 and sweep trace SL partly overlaps.Therefore, dot structure of the present invention design can in order to solve the problem of colour cast and image residue, and can improve display aperture opening ratio simultaneously and take into account the display effect of wide viewing angle.
Although the present invention discloses as above with embodiment; so itself and be not used to limit the present invention; the those skilled in the art of any art; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore the scope that protection scope of the present invention defines when claim is as the criterion.
Claims (11)
1. a dot structure, is characterized in that, described dot structure comprises:
Scan line and a data line;
One sharing signal line, parallel described sweep trace is arranged;
One active member, is electrically connected with described sweep trace and described data line;
One first pixel electrode, is electrically connected with described active member;
One second pixel electrode, separates with described first pixel electrode and is electrically connected with described active member;
One shares on-off element, is electrically connected with described sharing signal line and described active member;
One first sharing capacitor, it comprises a top electrode and a bottom electrode, the setting and described top electrode and described bottom electrode overlap each other, and wherein said top electrode is electrically connected with described on-off element of sharing; And
One second sharing capacitor, it comprises one first electrode and one second electrode, the setting and described first electrode and described second electrode overlap each other, wherein said first electrode is electrically connected with described first pixel electrode, and described second electrode is electrically connected with described on-off element of sharing.
2. dot structure as claimed in claim 1, it is characterized in that, described second sharing capacitor also comprises one the 3rd electrode, and described 3rd electrode and described second electrode overlap, and described 3rd electrode is electrically connected with described sweep trace.
3. dot structure as claimed in claim 1, it is characterized in that, described second electrode of described second sharing capacitor also comprises an extension, and described extension and described sweep trace overlap.
4. dot structure as claimed in claim 1, it is characterized in that, described dot structure also comprises a shielding pattern layer, and corresponding described sweep trace and described data line are arranged.
5. dot structure as claimed in claim 1, it is characterized in that, described dot structure also comprises a separation material, and correspondence is arranged on the top of described first sharing capacitor.
6. dot structure as claimed in claim 1, it is characterized in that, described active member comprises:
One grid, is connected with described sweep trace;
One source pole, is positioned at above described grid;
One first drain electrode, corresponding described source electrode is arranged, and is electrically connected with described first pixel electrode;
One second drain electrode, corresponding described source electrode is arranged, and is electrically connected with described second pixel electrode.
7. dot structure as claimed in claim 6, it is characterized in that, described dot structure also comprises:
One first contact hole, is electrically connected with between described first pixel electrode in described first drain electrode both making; And
One second contact hole, be electrically connected both making with between described second pixel electrode in described second drain electrode, wherein said first contact hole and described second contact hole are positioned at the same side of described sweep trace.
8. dot structure as claimed in claim 7, it is characterized in that, described first contact hole and described second contact hole are between described sweep trace and described sharing signal line.
9. dot structure as claimed in claim 7, it is characterized in that, described first pixel electrode and described sharing signal line partly overlap, and described second pixel electrode and described sweep trace partly overlap.
10. dot structure as claimed in claim 1, it is characterized in that, described dot structure also comprises a common electrode pattern, overlaps with described first pixel electrode and described second pixel electrode, to form one first reservior capacitor and one second reservior capacitor.
11. dot structures as claimed in claim 10, it is characterized in that, the described bottom electrode of described first sharing capacitor is connected with described common electrode pattern.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104130900A TWI570492B (en) | 2015-09-18 | 2015-09-18 | Pixel structure |
| TW104130900 | 2015-09-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105159002A true CN105159002A (en) | 2015-12-16 |
| CN105159002B CN105159002B (en) | 2019-03-08 |
Family
ID=54799900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510705099.XA Active CN105159002B (en) | 2015-09-18 | 2015-10-27 | pixel structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105159002B (en) |
| TW (1) | TWI570492B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI561906B (en) * | 2016-01-08 | 2016-12-11 | Au Optronics Corp | Pixel structure and display panel |
| CN107561805A (en) * | 2017-08-18 | 2018-01-09 | 友达光电股份有限公司 | Pixel structure |
| CN107807482A (en) * | 2017-09-22 | 2018-03-16 | 友达光电股份有限公司 | Pixel structure and display panel comprising same |
| CN110137187A (en) * | 2018-08-10 | 2019-08-16 | 友达光电股份有限公司 | Display device |
| WO2021023147A1 (en) * | 2019-08-06 | 2021-02-11 | 京东方科技集团股份有限公司 | Display substrate, preparation method therefor and display apparatus |
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| CN101504503A (en) * | 2009-04-10 | 2009-08-12 | 友达光电股份有限公司 | Pixel array, LCD panel and optoelectronic device |
| CN102608816A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and manufacture method thereof |
| US20130002625A1 (en) * | 2011-06-29 | 2013-01-03 | Au Optronics Corporation | Pixel structure and method of driving the same |
| CN103984173A (en) * | 2014-03-26 | 2014-08-13 | 友达光电股份有限公司 | Pixel structure |
| CN104122724A (en) * | 2014-07-04 | 2014-10-29 | 深圳市华星光电技术有限公司 | Low-color-error liquid crystal array substrate and drive method thereof |
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|---|---|---|---|---|
| KR101592014B1 (en) * | 2009-03-10 | 2016-02-19 | 삼성디스플레이 주식회사 | Liquid crystal display |
| TWI380110B (en) * | 2009-04-02 | 2012-12-21 | Au Optronics Corp | Pixel array, liquid crystal display panel, and electro-optical apparatus |
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2015
- 2015-09-18 TW TW104130900A patent/TWI570492B/en active
- 2015-10-27 CN CN201510705099.XA patent/CN105159002B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101504503A (en) * | 2009-04-10 | 2009-08-12 | 友达光电股份有限公司 | Pixel array, LCD panel and optoelectronic device |
| US20130002625A1 (en) * | 2011-06-29 | 2013-01-03 | Au Optronics Corporation | Pixel structure and method of driving the same |
| CN102608816A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and manufacture method thereof |
| CN103984173A (en) * | 2014-03-26 | 2014-08-13 | 友达光电股份有限公司 | Pixel structure |
| CN104122724A (en) * | 2014-07-04 | 2014-10-29 | 深圳市华星光电技术有限公司 | Low-color-error liquid crystal array substrate and drive method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI561906B (en) * | 2016-01-08 | 2016-12-11 | Au Optronics Corp | Pixel structure and display panel |
| CN107561805A (en) * | 2017-08-18 | 2018-01-09 | 友达光电股份有限公司 | Pixel structure |
| CN107807482A (en) * | 2017-09-22 | 2018-03-16 | 友达光电股份有限公司 | Pixel structure and display panel comprising same |
| CN107807482B (en) * | 2017-09-22 | 2020-07-10 | 友达光电股份有限公司 | Pixel structure and display panel comprising same |
| CN110137187A (en) * | 2018-08-10 | 2019-08-16 | 友达光电股份有限公司 | Display device |
| WO2021023147A1 (en) * | 2019-08-06 | 2021-02-11 | 京东方科技集团股份有限公司 | Display substrate, preparation method therefor and display apparatus |
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| Publication number | Publication date |
|---|---|
| TW201712420A (en) | 2017-04-01 |
| CN105159002B (en) | 2019-03-08 |
| TWI570492B (en) | 2017-02-11 |
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