CN105157854A - Terahertz micro bolometer and manufacture method thereof - Google Patents
Terahertz micro bolometer and manufacture method thereof Download PDFInfo
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- CN105157854A CN105157854A CN201510503644.7A CN201510503644A CN105157854A CN 105157854 A CN105157854 A CN 105157854A CN 201510503644 A CN201510503644 A CN 201510503644A CN 105157854 A CN105157854 A CN 105157854A
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Abstract
The invention discloses a terahertz micro bolometer and a manufacture method thereof. The method comprises that a substrate is prepared, and a metal reflection layer is formed; a photosensitive polyimide layer is formed on the metal reflection layer; a dielectric cover layer is formed on the photosensitive polyimide layer; a suspended micro-bridge structure is formed on the dielectric cover layer; and a terahertz radiation absorption layer is formed on the micro-bridge structure. The distance from a position where the photosensitive polyimide layer makes contact with the metal reflection layer to the center of the micro-bridge structure is one fourth of the wavelength of the terahertz radiation. The terahertz micro bolometer can adjust the thickness of the photosensitive polyimide layer so that the micro-bridge structure obtains the effective optical resonator height that satisfies the 1/4 wavelength, and improve the absorption efficiency of the terahertz radiation absorption layer.
Description
Technical field
The present invention relates to terahertz detection technical field, especially relate to a kind of Terahertz micro-metering bolometer and manufacture method thereof.
Background technology
Terahertz refers to that frequency is 0.1-10THz(1THz=10
12hz) electromagnetic wave of scope, corresponding wavelength scope is 3mm-30 μm, between millimeter wave and infrared waves, has the character of its uniqueness compared with the electromagnetic radiation of other wave band: 1. transient state: the typical pulse-widths of terahertz pulse is at picosecond magnitude; 2. broadband property: terahertz pulse source only comprises the electromagnetic oscillation in several cycles usually, the frequency band of individual pulse can cover the scope of GHz to tens THz; 3. coherence: the coherent measurement technology of terahertz time-domain spectroscopic technology directly can measure amplitude and the phase place of Terahertz electric field, can extract refractive index, the absorption coefficient of sample easily; 4. low energy: the energy of Terahertz photon only has milli electron-volt, can not destroy position than tested substance, thus can carry out the diagnosis and detection of biomedical aspect safely because of ionization; 5. penetrability: terahertz emission is for a lot of nonpolar megohmite insulant, and the wrappage such as such as cardboard, plastics, yarn fabric have very high through characteristic, detect concealing object; 6. water-based is feared: most of polar molecule such as hydrone, amino molecule etc. have strong absorption to terahertz emission, can by analyzing their characteristic spectrum research water content of materials or carrying out production quality control; 7. the characteristic absorption of spectrum: because the macromolecular vibration of much polarity and rotational energy level are just in time in Terahertz frequency band range, makes terahertz light spectral technology in analysis and studies in large molecule and have broad application prospects.
Terahertz room temperature creep is the research direction of a new development, has working and room temperature, volume is little, response is fast, can become the features such as face system of battle formations picture, applied range.At present, the technology realizing miniaturization THz wave energy detection comprises pyroelectricity terahertz detector and Golay detector (GolayCell) two kinds.
Thermo-responsive film in terahertz detector probe unit absorbs very weak to THz wave, makes the difficulty of terahertz emission input larger.Traditional infrared eye, as micro-metering bolometer, is only about 2 ~ 5% of infrared absorption to the absorption of Terahertz, even also low than the unevenness of device material, therefore extremely difficult differentiation noise and tested signal.Therefore, need to optimize terahertz detector to strengthen absorptive character.
Traditional infrared micro-bolometer optimizes project, has three all different optimization methods.The first changes absorption layer material, strengthens the absorptivity of absorption layer; It two is use antenna-coupled method, utilizes Electromagnetic theory to strengthen THz wave and absorbs, and it three is optimal cavities, strengthens terahertz radiation and absorbs.Wherein, because Terahertz wavelength is longer, for raising resonator cavity height, make it effective optical resonantor height of satisfied " 1/4 wavelength ", difficulty is larger.
Summary of the invention
An object of the present invention is to provide the Terahertz micro-metering bolometer and manufacture method thereof that can significantly improve terahertz emission absorptivity.
Technical scheme disclosed by the invention comprises:
Provide a kind of method manufacturing Terahertz micro-metering bolometer, it is characterized in that, comprising: prepare substrate; Form metallic reflector over the substrate; Described metallic reflector is formed light-sensitive polyimide layer, and prepare metal electrode and metal lead wire in described light-sensitive polyimide layer; Described light-sensitive polyimide layer forms dielectric passivation, and described dielectric passivation covers described light-sensitive polyimide layer; Described dielectric passivation forms unsettled micro-bridge structure, and the peripheral part of described micro-bridge structure is supported on described dielectric passivation, and the core of described micro-bridge structure is away from described dielectric passivation and be connected with described peripheral part by coupling part; Described core is formed terahertz emission absorption layer; Wherein from the position that described light-sensitive polyimide layer contacts with described metallic reflector to the distance of the described core of described micro-bridge structure be 1/4th of the wavelength of terahertz emission.
In one embodiment of the present of invention, described metallic reflector is formed light-sensitive polyimide layer comprise: spin coating light-sensitive polyimide solution on described metallic reflector, then the photosensitive polyimide film of coating is toasted to the solvent removed in the photosensitive polyimide film of coating.
In one embodiment of the present of invention, in described light-sensitive polyimide layer, prepare metal electrode and metal lead wire comprises: with litho machine, described light-sensitive polyimide layer is exposed, form electrode hole; In described light-sensitive polyimide layer, metal electrode and metal lead wire is formed with magnetically controlled sputter method.
In one embodiment of the present of invention, described dielectric passivation covers described light-sensitive polyimide layer completely.
In one embodiment of the present of invention, also comprise: on described micro-bridge structure, form metal electrode layer, described metal electrode layer connects metal electrode in described terahertz emission absorption layer and described light-sensitive polyimide layer and metal lead wire.
In one embodiment of the present of invention, also comprise: on described terahertz emission absorption layer, form dielectric layer and metal absorption layer.
Additionally provide a kind of Terahertz micro-metering bolometer in embodiments of the invention, it is characterized in that, comprising: substrate; Metallic reflector, described metallic reflector is formed over the substrate; Light-sensitive polyimide layer, described light-sensitive polyimide layer is formed on described metallic reflector, is formed with metal electrode and metal lead wire in described light-sensitive polyimide layer; Dielectric passivation, described dielectric passivation to be formed on described light-sensitive polyimide layer and to cover described light-sensitive polyimide layer; Micro-bridge structure, described micro-bridge structure is formed on described dielectric passivation, and the peripheral part of described micro-bridge structure is supported on described dielectric passivation, the core of described micro-bridge structure is away from described dielectric passivation and be connected with described peripheral part by coupling part; Terahertz emission absorption layer, described terahertz emission absorption layer is formed on described core; Wherein from the position that described light-sensitive polyimide layer contacts with described metallic reflector to the distance of the described core of described micro-bridge structure be 1/4th of the wavelength of terahertz emission.
In one embodiment of the present of invention, described dielectric passivation covers described light-sensitive polyimide layer completely.
In one embodiment of the present of invention, described micro-bridge structure is also formed with metal electrode layer, described metal electrode layer connects metal electrode in described terahertz emission absorption layer and described light-sensitive polyimide layer and metal lead wire.
In one embodiment of the present of invention, described terahertz emission absorption layer is also formed with dielectric layer and metal absorption layer.
Terahertz micro-metering bolometer in embodiments of the invention adds light-sensitive polyimide layer and dielectric layer, and dielectric layer is formed unsettled micro-bridge structure, and the preparation of micro-bridge structure top layer has terahertz emission absorption layer.By adjustment light-sensitive polyimide layer thickness, micro-bridge structure can be made to obtain the effective optical resonantor height meeting " 1/4 wavelength ", thus strengthen the absorption efficiency of terahertz emission absorption layer.Dielectric layer complete covering light-sensitive polyimide layer, ensures that it is not removed during sacrifice layer release in the micro-bridge structure of upper strata, forms good mechanical support.This micro-bridge structure effectively solves the contradiction between the stable electric communication under higher optical resonator and high drop, and significantly improve the terahertz emission absorptivity of micro-bridge structure, it is little that technique realizes difficulty.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for the manufacture Terahertz micro-metering bolometer of one embodiment of the invention.
Fig. 2 is the structural representation of the Terahertz micro-metering bolometer of one embodiment of the invention.
Embodiment
The concrete structure of Terahertz micro-metering bolometer and the concrete steps of its manufacture method of embodiments of the invention are described in detail below in conjunction with accompanying drawing.
Fig. 1 is the schematic flow sheet of the method for the manufacture Terahertz micro-metering bolometer of one embodiment of the invention.Fig. 2 is the structural representation of the Terahertz micro-metering bolometer according to one embodiment of the invention manufacture.
As shown in Figure 1, in some embodiments of the present invention, in step 10, substrate 1 can be prepared, and on substrate, form metallic reflector 2.
In some embodiments of the present invention, the method preparing substrate 1 and the method forming metallic reflector 2 on substrate can be the methods that this area is commonly used, and are not described in detail in this.
In step 20, light-sensitive polyimide layer 4 can be formed on metallic reflector 2, and prepare metal electrode and metal lead wire 3 in this light-sensitive polyimide layer.
In some embodiments of the present invention, the method of spin coating can be used, spin coating light-sensitive polyimide solution on this metallic reflector 2, thus photosensitive polyimide film is formed on metallic reflector, then (at the temperature such as, below 120 DEG C) is toasted to remove the solvent in the photosensitive polyimide film of coating to the photosensitive polyimide film of coating.
When forming light-sensitive polyimide layer, the thickness of light-sensitive polyimide layer can be regulated by the rotating speed of spin coater during control spin coating and/or spin coating number of times.
In some embodiments of the present invention, control the thickness of light-sensitive polyimide layer, this light-sensitive polyimide layer 4 can be made to increase micro-bridge structure 7(and hereinafter describe in detail) optical resonator height, make it to meet the optimum resonance height of 1/4th of wavelength.Such as, in an embodiment, the position that contacts with metallic reflector 2 from light-sensitive polyimide layer 4 can be made hereinafter to describe in detail to the core 72(of micro-bridge structure 7) distance be 1/4th of the wavelength of terahertz emission.
In some embodiments of the present invention, when preparing metal electrode and metal lead wire 3, litho machine can be used to expose light-sensitive polyimide layer, form electrode hole, then in light-sensitive polyimide layer, form metal electrode and metal lead wire 3 by the method for magnetron sputtering.The thickness of metal electrode and metal lead wire 3 can in the scope of 0.03 to 0.5 micron.
In step 30, dielectric passivation 5 can be formed on light-sensitive polyimide layer 4.This dielectric passivation 5 can be low stress dielectric layer, can be made up of silicon nitride or silica material.
Such as, in an embodiment, dielectric passivation 5 can be the silicon nitride or silicon oxide film prepared by PECVD device, adopts mixing growing technology to control the stress of film.Namely the power source alternation that two cover frequencies are different is adopted, wherein, high frequency source frequency about tens MHz, low frequency source hundreds of kHz.PECVD depositing temperature is 150 ~ 300 DEG C, SiH when preparing silicon nitride medium overlayer 5
4with NH
3throughput ratio can be 10/170 ~ 40/140, SiH when preparing silica medium overlayer 5
4with N
2the throughput ratio of O can be 10/20 ~ 10/60.Dielectric passivation 5 thickness range of preparation can in 50nm ~ 2 μm.
In some embodiments of the present invention, dielectric passivation 5 can cover light-sensitive polyimide layer 4 completely, makes hereinafter to describe in detail forming micro-bridge structure 7() time photosensitive polyimide layer 4 can not be damaged or remove.
In step 40, unsettled micro-bridge structure 7 can be formed on dielectric passivation 5.This micro-bridge structure 7 can comprise peripheral part 71, core 72 and be connected the coupling part 73 of peripheral part 71 and core 72.The peripheral part 71 of micro-bridge structure is supported on dielectric passivation 5, and core 72 is away from dielectric passivation 5 and be connected with peripheral part 71 by coupling part 73.Like this, this micro-bridge structure 7 forms the structure unsettled relative to dielectric passivation 5.
In some embodiments of the present invention, micro-bridge structure 7 can be formed by silicon nitride, monox or multi-layer compound film.
In this step, sacrifice layer 6 can be formed on dielectric passivation 5, then on sacrifice layer 6, form micro-bridge structure 7.Finally, remove sacrifice layer 6, namely define the micro-bridge structure 7 with aforesaid hanging structure.The material of sacrifice layer 6 can be monox or light-sensitive polyimide (PSPI).
In step 50, terahertz emission absorption layer 8 can be formed on the core 72 of micro-bridge structure 7.
In this Terahertz micro-metering bolometer that method manufactures according to an embodiment of the invention, core 72 to the light-sensitive polyimide layer 4(of micro-bridge structure 7 is such as, as shown in arrow in Fig. 2 20) define optical resonator.By regulating the thickness of light-sensitive polyimide layer 4, optical resonator can be made to meet effective optical resonantor height with " 1/4 wavelength ", thus effectively improve the absorptivity to terahertz emission absorption layer 8 pairs of terahertz emissions.
Such as, in some embodiments of the present invention, the thickness of light-sensitive polyimide layer meets 1/4th of the wavelength that the position that contacts with metallic reflector 2 from this light-sensitive polyimide layer 4 is terahertz emission to the distance (the distance T shown in the arrow 20 such as, in Fig. 2) of the core 72 of micro-bridge structure 7.
In some embodiments of the present invention, metal electrode layer 11 can also be formed on micro-bridge structure 7, this metal electrode layer 11 connects metal electrode in terahertz emission absorption layer 8 and aforesaid light-sensitive polyimide layer 4 and metal lead wire 3, the output signal of terahertz emission absorption layer 8 to be exported.
In embodiments of the invention, metal electrode can be formed by materials such as aluminium, titanium or nickel-chromes with lead-in wire 3 and metal electrode layer 11.
In some embodiments of the present invention, dielectric layer 9 and metal absorption layer 10 can also be formed on terahertz emission absorption layer 8.Dielectric layer 9 can be silicon nitride or monox.Metal absorption layer 10 can be titanium or nickel-cadmium etc.
The structure of the Terahertz micro-metering bolometer that method according to some embodiments of the invention manufactures as shown in Figure 2.This Terahertz micro-metering bolometer comprises substrate 1, metallic reflector 2, light-sensitive polyimide layer 4, dielectric passivation 5, micro-bridge structure 7 and terahertz emission absorption layer 8.
Metallic reflector 2 is formed on substrate 1.Light-sensitive polyimide layer 4 is formed on metallic reflector 2, and is formed with metal electrode and metal lead wire 3 in this light-sensitive polyimide layer 4.
Dielectric passivation 5 to be formed on light-sensitive polyimide layer 4 and to cover this light-sensitive polyimide layer 4.In some embodiments, this dielectric passivation 5 covers this light-sensitive polyimide layer 4 completely.
Micro-bridge structure 7 to be formed on dielectric passivation 4, and the peripheral part 71 of micro-bridge structure 7 is supported on dielectric passivation 4, and the core 72 of micro-bridge structure 7 is away from dielectric passivation 4 and be connected with peripheral part 71 by coupling part 73.
Terahertz emission absorption layer 8 is formed on the core 72 of micro-bridge structure 7.
In some embodiments, from the position that this light-sensitive polyimide layer 4 contacts with metallic reflector 2 to the distance of the core 72 of micro-bridge structure 7 be 1/4th of the wavelength of terahertz emission.
In some embodiments, micro-bridge structure 7 is also formed with metal electrode layer 11, this metal electrode layer 11 connects metal electrode in terahertz emission absorption layer 8 and light-sensitive polyimide layer 4 and metal lead wire 3.
In some embodiments, terahertz emission absorption layer 8 is also formed with dielectric layer 9 and metal absorption layer 10.
Terahertz micro-metering bolometer in embodiments of the invention adds light-sensitive polyimide layer and dielectric layer, and dielectric layer is formed unsettled micro-bridge structure, and the preparation of micro-bridge structure top layer has terahertz emission absorption layer.By adjustment light-sensitive polyimide layer thickness, micro-bridge structure can be made to obtain the effective optical resonantor height meeting " 1/4 wavelength ", thus strengthen the absorption efficiency of terahertz emission absorption layer.Dielectric layer complete covering light-sensitive polyimide layer, ensures that it is not removed during sacrifice layer release in the micro-bridge structure of upper strata, forms good mechanical support.This micro-bridge structure effectively solves the contradiction between the stable electric communication under higher optical resonator and high drop, and significantly improve the terahertz emission absorptivity of micro-bridge structure, it is little that technique realizes difficulty.
Described the present invention by specific embodiment above, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and can also make various amendment, equivalent replacement, change etc. to the present invention, as long as these conversion do not deviate from spirit of the present invention, all should within protection scope of the present invention.In addition, " embodiment " described in above many places represents different embodiments, can certainly by its all or part of combination in one embodiment.
Claims (10)
1. manufacture a method for Terahertz micro-metering bolometer, it is characterized in that, comprising:
Prepare substrate;
Form metallic reflector over the substrate;
Described metallic reflector is formed light-sensitive polyimide layer, and prepare metal electrode and metal lead wire in described light-sensitive polyimide layer;
Described light-sensitive polyimide layer forms dielectric passivation, and described dielectric passivation covers described light-sensitive polyimide layer;
Described dielectric passivation forms unsettled micro-bridge structure, and the peripheral part of described micro-bridge structure is supported on described dielectric passivation, and the core of described micro-bridge structure is away from described dielectric passivation and be connected with described peripheral part by coupling part;
Described core is formed terahertz emission absorption layer;
Wherein from the position that described light-sensitive polyimide layer contacts with described metallic reflector to the distance of the described core of described micro-bridge structure be 1/4th of the wavelength of terahertz emission.
2. the method for claim 1, it is characterized in that, described metallic reflector is formed light-sensitive polyimide layer comprise: spin coating light-sensitive polyimide solution on described metallic reflector, then the photosensitive polyimide film of coating is toasted to the solvent removed in the photosensitive polyimide film of coating.
3. the method for claim 1, is characterized in that, prepares metal electrode and metal lead wire comprises in described light-sensitive polyimide layer:
With litho machine, described light-sensitive polyimide layer is exposed, form electrode hole;
In described light-sensitive polyimide layer, metal electrode and metal lead wire is formed with magnetically controlled sputter method.
4. as the method in claims 1 to 3 as described in any one, it is characterized in that: described dielectric passivation covers described light-sensitive polyimide layer completely.
5. as the method in Claims 1-4 as described in any one, it is characterized in that, also comprise: on described micro-bridge structure, form metal electrode layer, described metal electrode layer connects metal electrode in described terahertz emission absorption layer and described light-sensitive polyimide layer and metal lead wire.
6. as the method in claim 1 to 5 as described in any one, it is characterized in that, also comprise: on described terahertz emission absorption layer, form dielectric layer and metal absorption layer.
7. a Terahertz micro-metering bolometer, is characterized in that, comprising:
Substrate;
Metallic reflector, described metallic reflector is formed over the substrate;
Light-sensitive polyimide layer, described light-sensitive polyimide layer is formed on described metallic reflector, is formed with metal electrode and metal lead wire in described light-sensitive polyimide layer;
Dielectric passivation, described dielectric passivation to be formed on described light-sensitive polyimide layer and to cover described light-sensitive polyimide layer;
Micro-bridge structure, described micro-bridge structure is formed on described dielectric passivation, and the peripheral part of described micro-bridge structure is supported on described dielectric passivation, the core of described micro-bridge structure is away from described dielectric passivation and be connected with described peripheral part by coupling part;
Terahertz emission absorption layer, described terahertz emission absorption layer is formed on described core;
Wherein from the position that described light-sensitive polyimide layer contacts with described metallic reflector to the distance of the described core of described micro-bridge structure be 1/4th of the wavelength of terahertz emission.
8. Terahertz micro-metering bolometer as claimed in claim 7, is characterized in that: described dielectric passivation covers described light-sensitive polyimide layer completely.
9. the Terahertz micro-metering bolometer as described in claim 7 or 8, it is characterized in that: described micro-bridge structure is also formed with metal electrode layer, described metal electrode layer connects metal electrode in described terahertz emission absorption layer and described light-sensitive polyimide layer and metal lead wire.
10. as the Terahertz micro-metering bolometer in claim 7 to 9 as described in any one, it is characterized in that: described terahertz emission absorption layer is also formed with dielectric layer and metal absorption layer.
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Cited By (1)
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| CN108358157A (en) * | 2018-02-28 | 2018-08-03 | 电子科技大学 | A kind of Meta Materials micro-bridge structure and preparation method thereof |
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