CN105141812A - Method for producing sapphire camera window film - Google Patents
Method for producing sapphire camera window film Download PDFInfo
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- CN105141812A CN105141812A CN201510339527.1A CN201510339527A CN105141812A CN 105141812 A CN105141812 A CN 105141812A CN 201510339527 A CN201510339527 A CN 201510339527A CN 105141812 A CN105141812 A CN 105141812A
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Abstract
The invention relates to a method for producing a sapphire camera window film, specifically comprising the steps of bar hollowing-out from crystal, crystal cutting, grinding, chamfering, annealing, double-sided polishing, wafer cutting through laser, coating, ink applying, thermal drying, and the like. A sapphire camera window film prepared by the method of the invention is of high quality, the rejection rate is low, and the production efficiency is high.
Description
Technical field
The present invention relates to a kind of production method of sapphire sheet, particularly relate to a kind of production method of sapphire camera diaphragm, belong to technical field of sapphire treatment.
Background technology
In the modern life, mobile phone has become the requisite electronic product of people, and most mobile phone all has the function of taking pictures.Conventional mobile phone covers in order to protect the diaphragm of camera to be made up of glass on camera, and the Mohs' hardness of glass only has 7, and resistance to wear is poor.
Along with the progress of science and technology, the mobile phone camera diaphragm of glass material is replaced by sapphire material just gradually.Sapphire has good thermal characteristics, fabulous electrical characteristic and dielectric property, at high temperature can keep high strength, excellent hot attribute and transmitance, and anti-chemical corrosion.Be the mobile phone camera diaphragm that raw material is made with sapphire, definition is high, third dimension good, surperficial damage resistant, and customer satisfaction is high.
Chinese patent literature ZL201410294312.8 discloses a kind of sapphire material mobile phone window manufacture method, and its specific implementation method is: get sapphire material, carries out pre-polish(ing) with laser; Crystal block shape sapphire after polishing is carried out laser cutting, after cutting into sheet stock, is cut into the square block designing size, for plastotype operation; Waffer edge after laser cutting is trimmed to arc-shaped, improves the mechanical strength of chip edge with this; By the wafer corase grind after chamfering, the wafer cutting damage layer caused when removing section and the flatness improving wafer; The wafer after corase grind, carry out moulding with laser; The waste material laser cutting of wafer good for plastotype is fallen, is cut into set shape.The method process step design is reasonable not, directly can affect quality and the rate of finished products of diaphragm.
Summary of the invention
The technical problem that the present invention solves is: propose a kind of one-tenth tablet quality high, percent defective is low, the production method of the sapphire camera diaphragm that production efficiency is high.
In order to solve the problems of the technologies described above, the technical scheme that the present invention proposes is: a kind of production method of sapphire camera diaphragm, comprises following concrete steps:
Step one, crystal draw rod; Get A to, M to or C to sapphire crystal, then use and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 2, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 3, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02 ~ 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000 ~ 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 10 ~ 20 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, and all the other are deionized water;
Step 4, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 5, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 ~ 220 DEG C/h and temperature risen to 1600 DEG C, 2 ~ 6h is incubated respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2 ~ 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 6, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12 ~ 0.15Mpa to wafer, and the rotating speed of polishing disk is 1000 ~ 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 1 ~ 6 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, the nano silicon of 0.5 ~ 2%, make polishing fluid pH value be 11.0 ~ 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 7, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 8, plated film; Adopt optical vacuum coating machine to the tow sides coating anti reflection film of wafer, anti-reflective film by low-refraction oxide and high refractive index oxide successively plating to form and the number of plies is 4 ~ 8 layers, one deck near wafer adopts low-refraction oxide, described low-refraction oxide is the oxide of silicon or aluminium, and described high refractive index oxide is the oxide of titanium or tantalum;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2 ~ 3h, air cooling is to room temperature.
Being improved to technique scheme: in described step 2, the diameter of carborundum line is 0.14 ~ 0.16mm, on carborundum line, adamantine particle diameter is 30 ~ 40 μm, carborundum line moves with the speed of 12 ~ 15m/s when cutting, crystal is 0.2 ~ 0.3mm/min relative to the translational speed of carborundum line, constantly cutting liquid is sprayed to carborundum line, containing particle diameter to be the diamond particles of 20 ~ 30 μm and particle diameter the be corundum in granules of 50 ~ 60 μm in described cutting liquid during cutting.
Being improved to technique scheme: in described step 3 is the alumina particle of 3 ~ 6 μm containing particle diameter in described lapping liquid.
Being improved to technique scheme: in described step 5, during intensification, at 300 DEG C of insulation 2h, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 4h.
Being improved to technique scheme: in described step 6, described alkaline solution is KOH.
Being improved to technique scheme: in described step 6, described polishing fluid pH value is 12.0 ~ 13.0.
Being improved to technique scheme: in described step 6, polishing disk is forced into 0.135Mpa to wafer.
Being improved to technique scheme: in described step 7, the diameter of laser beam is 0.015 ~ 0.02mm, and cutting speed is 3 ~ 5mm/s.
Being improved to technique scheme: in described step 8, described optical vacuum coating machine, ion source is adopted to produce electron beam, first low-refraction oxide or high refractive index oxide post liquefaction are solidified and carry out fritting, then the low-refraction oxide after solidifying or high refractive index oxide gasification are ejected on crystal face form film.
The present invention has positive effect:
(1) camera diaphragm production method of the present invention, sheet is got in first grinding, polishing again laser, the production efficiency of grinding, polishing can be improved, because sapphire hardness is large, larger pressure must be applied during polishing, annealing is conducive to the internal stress that machining operation such as elimination Linear cut, grinding etc. produces before polishing., makes wafer unsuitable cracked when polishing, effectively improves rate of finished products.
(2) camera diaphragm production method of the present invention, strict control grinding and the parameter of polishing and the composition of lapping liquid and polishing fluid, be conducive to the efficiency improving grinding and polishing, improve the rate of finished products of grinding and polishing, the chip architecture prepared is complete, and without physical damnification, surface is fine and smooth, smooth, deformation is little.In lapping liquid and polishing fluid, appropriate cubic boron nitride powder serves as abrasive material, and hardness is high, and resistance to wear is good; The suspension viscosity that APES, glycerine, polypropylene glycol 400 and deionized water are formed and interfacial film stable in properties, abrasive suspension is stablized, and good evenness, can not glue also, is conducive to the quality and the efficiency that improve grinding and polishing.Appropriate APES is a kind of non-ionic surface active agent, its stable in properties, and having dispersion, emulsification, the multiple performance such as wetting, is that suspension obtains the topmost composition of excellent properties; Glycerine proportion is suitable, has good dissolubility with water and organic solution, very applicable as auxiliary dispersants; Polypropylene glycol 400 has emulsification, wetting effect, and can effectively thickening, effectively promotes viscosity and the interfacial film character of suspension.In addition, appropriate Nano-meter SiO_2 is contained in polishing fluid
2, epigranular, good dispersion, planarization efficiency are high.Alkaline solution KOH makes polishing fluid be alkalescence, assists polishing by chemical corrosion, thus polishing effect is better, and polishing efficiency is better.In order to keep the stability of polishing fluid, thus ensureing efficiency and the quality of polishing, constantly must supplement alkaline solution, maintaining polishing fluid pH value substantially constant.
(3) camera diaphragm production method of the present invention, by filming process, increases light transmission, reduces reflectivity, can make the light transmittance of sapphire wafer original 89%, be promoted to more than 94%.In filming process, low-refraction oxide or high refractive index oxide post liquefaction are solidified and carry out fritting, the distribution of oxide can be made more even, promote the effect of plated film.
(4) camera diaphragm production method of the present invention, then drying by brushing three layers of ink, making the edge of wafer light tight, effectively can prevent light from entering from the side of wafer, impact imaging.
(5) camera diaphragm of the present invention adopts sapphire to be that base material is made, and because sapphire hardness is high, resistance to wear is good, does not make diaphragm easy to wear and scratch.By the diaphragm that camera diaphragm production method of the present invention is made, highly polished, light transmission is good, and optical property is up to standard, and becomes tablet quality high, and percent defective is low, and production efficiency is high, has a extensive future.
Embodiment
Embodiment 1
The preparation flow of the sapphire camera diaphragm of the present embodiment comprises the steps:
Step one, crystal draw rod; Get A to, M to or C to sapphire crystal, then use and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 2, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 3, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 2% is the cubic boron nitride powder of 20 μm, the APES of 16%, the glycerine of 6%, the polypropylene glycol 400 of 11%, and all the other are deionized water;
Step 4, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 5, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 220 DEG C/h and temperature risen to 1600 DEG C, 2h are incubated, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 4h at 300 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 6, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.15Mpa to wafer, and the rotating speed of polishing disk is 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 2% is the cubic boron nitride powder of 6 μm, the APES of 14 ~ 16%, the glycerine of 6%, the polypropylene glycol 400 of 11%, the nano silicon of 2%, make polishing fluid pH value be 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 7, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 8, plated film; Adopt optical vacuum coating machine to the tow sides coating anti reflection film of wafer, anti-reflective film by low-refraction oxide and high refractive index oxide successively plating to form and the number of plies is 8 layers, one deck near wafer adopts low-refraction oxide, described low-refraction oxide is the oxide of silicon or aluminium, and described high refractive index oxide is the oxide of titanium or tantalum;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2 ~ 3h, air cooling is to room temperature.
Embodiment 2
The preparation flow of the sapphire camera diaphragm of the present embodiment comprises the steps:
Step one, crystal draw rod; Get A to, M to or C to sapphire crystal, then use and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 2, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 3, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 1000rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5% is the cubic boron nitride powder of 10 μm, the APES of 14%, the glycerine of 4%, the polypropylene glycol 400 of 9%, and all the other are deionized water;
Step 4, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 5, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 DEG C/h and temperature risen to 1600 DEG C, 2h are incubated, at 800 DEG C of insulation 4h, at 1600 DEG C of insulation 5h at 300 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 6, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12Mpa to wafer, and the rotating speed of polishing disk is 1000rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5% is the cubic boron nitride powder of 1 μm, the APES of 14%, the glycerine of 4%, the polypropylene glycol 400 of 9%, the nano silicon of 0.5%, make polishing fluid pH value be 11.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 7, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 8, plated film; Adopt optical vacuum coating machine to the tow sides coating anti reflection film of wafer, anti-reflective film by low-refraction oxide and high refractive index oxide successively plating to form and the number of plies is 4 layers, one deck near wafer adopts low-refraction oxide, described low-refraction oxide is the oxide of silicon or aluminium, and described high refractive index oxide is the oxide of titanium or tantalum;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2h, air cooling is to room temperature.
Embodiment 3
The preparation flow of the sapphire camera diaphragm of the present embodiment comprises the steps:
Step one, crystal draw rod; Get A to, M to or C to sapphire crystal, then use and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 2, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 3, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02Mpa to wafer, and the rotating speed of abrasive disk is 11000rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 1% is the cubic boron nitride powder of 15 μm, the APES of 15%, the glycerine of 5%, the polypropylene glycol 400 of 10%, and all the other are deionized water;
Step 4, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 5, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 200 DEG C/h and temperature risen to 1600 DEG C, 2h are incubated, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 5h at 300 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 6, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.13Mpa to wafer, and the rotating speed of polishing disk is 1200rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 1% is the cubic boron nitride powder of 3 μm, the APES of 15%, the glycerine of 5%, the polypropylene glycol 400 of 10%, the nano silicon of 1%, make polishing fluid pH value be 12.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 7, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 8, plated film; Adopt optical vacuum coating machine to the tow sides coating anti reflection film of wafer, anti-reflective film by low-refraction oxide and high refractive index oxide successively plating to form and the number of plies is 6 layers, one deck near wafer adopts low-refraction oxide, described low-refraction oxide is the oxide of silicon or aluminium, and described high refractive index oxide is the oxide of titanium or tantalum;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 3h, air cooling is to room temperature.
The production method of sapphire camera diaphragm of the present invention is not limited to the concrete technical scheme described in above-described embodiment, and all employings are equal to replaces the protection range that the technical scheme formed is application claims.
Claims (9)
1. a production method for sapphire camera diaphragm, is characterized in that, comprises following concrete steps:
Step one, crystal draw rod; Get A to, M to or C to sapphire crystal, then use and draw excellent machine and carry out drawing rod, thus obtain crystal bar;
Step 2, crystal-cut; Adopt carborundum line cutting equipment to cut crystal bar, thus obtain wafer;
Step 3, grinding; Grinder is adopted to grind wafer; During grinding, add lapping liquid, abrasive disk is forced into 0.02 ~ 0.022Mpa to wafer, and the rotating speed of abrasive disk is 1000 ~ 1200rpm/min; Grind rear washes of absolute alcohol; Described lapping liquid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 10 ~ 20 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, and all the other are deionized water; Mix;
Step 4, chamfering; The skive of Digit Control Machine Tool is adopted to carry out chamfered to the corner of wafer;
Step 5, annealing; Wafer is put into annealing furnace, carry out heating up with the speed of 180 ~ 220 DEG C/h and temperature risen to 1600 DEG C, 2 ~ 6h is incubated respectively at 300 DEG C, 800 DEG C, 1600 DEG C during intensification, then lower the temperature with the temperature of 200 DEG C, be incubated 2 ~ 3h respectively at 1000 DEG C, 500 DEG C during cooling and be cooled to room temperature taking-up;
Step 6, double side chemical polishing; First with absolute ethyl alcohol, wafer is cleaned, then the wafer after cleaning is put into Twp-sided polishing machine and fix; During polishing, add polishing fluid, polishing disk is forced into 0.12 ~ 0.15Mpa to wafer, and the rotating speed of polishing disk is 1000 ~ 1500rpm/min, by after polished wafer washes of absolute alcohol, at room temperature carries out nature cooling; Described polishing fluid component comprises: the granular size of 0.5 ~ 2% is the cubic boron nitride powder of 1 ~ 6 μm, the APES of 14 ~ 16%, the glycerine of 4 ~ 6%, the polypropylene glycol 400 of 9 ~ 11%, the nano silicon of 0.5 ~ 2%, make polishing fluid pH value be 11.0 ~ 13.0 alkaline solution, all the other are deionized water; Alkaline solution is constantly supplemented to keep the pH value of polishing fluid in polishing process;
Step 7, laser get sheet; Wafer after polishing is put into laser cutting machine and passes into protective gas, wafer is cut into corresponding size by demand;
Step 8, plated film; Adopt optical vacuum coating machine to the tow sides coating anti reflection film of wafer, anti-reflective film by low-refraction oxide and high refractive index oxide successively plating to form and the number of plies is 4 ~ 8 layers, one deck near wafer adopts low-refraction oxide, described low-refraction oxide is the oxide of silicon or aluminium, and described high refractive index oxide is the oxide of titanium or tantalum;
Step 9, inking; Wafer after plated film is covered hollowed-out board, brushes ink in the edge of wafer and repeat brushing three layers;
Step 10, heat are dried; After the wafer being painted with ink being put into hot baking machine heat baking 2 ~ 3h, air cooling is to room temperature.
2. the production method of sapphire camera diaphragm according to claim 1, it is characterized in that: in described step 2, the diameter of carborundum line is 0.14 ~ 0.16mm, on carborundum line, adamantine particle diameter is 30 ~ 40 μm, carborundum line moves with the speed of 12 ~ 15m/s when cutting, crystal is 0.2 ~ 0.3mm/min relative to the translational speed of carborundum line, constantly cutting liquid is sprayed to carborundum line, containing particle diameter to be the diamond particles of 20 ~ 30 μm and particle diameter the be corundum in granules of 50 ~ 60 μm in described cutting liquid during cutting.
3. the production method of sapphire camera diaphragm according to claim 1, is characterized in that: in described step 3, is the alumina particle of 3 ~ 6 μm in described lapping liquid containing particle diameter.
4. the production method of sapphire camera diaphragm according to claim 1, is characterized in that: in described step 5, during intensification, at 300 DEG C of insulation 2h, at 800 DEG C of insulation 3h, at 1600 DEG C of insulation 4h.
5. the production method of sapphire camera diaphragm according to claim 1, it is characterized in that: in described step 6, described alkaline solution is KOH.
6. the production method of sapphire camera diaphragm according to claim 1, it is characterized in that: in described step 6, described polishing fluid pH value is 12.0.
7. the production method of sapphire camera diaphragm according to claim 1, is characterized in that: in described step 6, polishing disk is forced into 0.135Mpa to wafer.
8. the production method of sapphire camera diaphragm according to claim 1, it is characterized in that: in described step 7, the diameter of laser beam is 0.015 ~ 0.02mm, and cutting speed is 3 ~ 5mm/s.
9. the production method of sapphire camera diaphragm according to claim 1, it is characterized in that: in described step 8, described optical vacuum coating machine, ion source is adopted to produce electron beam, first low-refraction oxide or high refractive index oxide post liquefaction are solidified and carry out fritting, then the low-refraction oxide after solidifying or high refractive index oxide gasification are ejected on crystal face form film.
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| CN105818284A (en) * | 2016-04-08 | 2016-08-03 | 山东大学 | Method for cutting SiC monocrystal with size being six inches or larger through diamond wire and diamond mortar at same time |
| CN106057647A (en) * | 2016-07-07 | 2016-10-26 | 浙江水晶光电科技股份有限公司 | Sapphire processing method |
| CN107326328A (en) * | 2017-07-12 | 2017-11-07 | 合肥展游软件开发有限公司 | A kind of processing technology of electrical screen |
| CN108007890A (en) * | 2017-10-20 | 2018-05-08 | 北京雪迪龙科技股份有限公司 | A kind of motor-vehicle tail-gas detection light beam reflection unit and detecting system |
| CN109955121A (en) * | 2017-12-25 | 2019-07-02 | 蓝思科技股份有限公司 | A kind of product processing method |
| CN111515792A (en) * | 2020-04-28 | 2020-08-11 | 福建晶安光电有限公司 | Substrate material suitable for graphene growth and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105818284A (en) * | 2016-04-08 | 2016-08-03 | 山东大学 | Method for cutting SiC monocrystal with size being six inches or larger through diamond wire and diamond mortar at same time |
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| CN107326328A (en) * | 2017-07-12 | 2017-11-07 | 合肥展游软件开发有限公司 | A kind of processing technology of electrical screen |
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| CN111515792A (en) * | 2020-04-28 | 2020-08-11 | 福建晶安光电有限公司 | Substrate material suitable for graphene growth and manufacturing method thereof |
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| CN105141812B (en) | 2022-02-11 |
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