CN105140367B - 一种GaN基LED外延结构 - Google Patents
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- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 5
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- 238000005516 engineering process Methods 0.000 abstract description 7
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- 238000000034 method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
本发明公开了一种GaN基LED外延结构，涉及LED外延生长技术领域，自下而上包括：衬底、成核层、未掺杂GaN层、n型GaN层、发光层、电子阻档层和p型GaN层，其特点是：所述电子阻档层由AlxGa1‑xN层、多周期GaN/InyGa1‑yN超晶格结构层和AlzGa1‑zN层构成；其中,0<x≤0.8,0<y≤0.2,0<z≤0.5。本发明可以有效阻档电子泄漏，增加电子与空穴的辐射复合，提高LED的内量子效率和光的输出功率，还能增强LED的抗静电能力。
Description
技术领域
本发明涉及氮化物半导体发光器件的外延生长技术领域，特别涉及一种GaN基LED外延结构。
背景技术
GaN基发光二极管（LED）是氮化物半导体发光器件中的典型代表，GaN基LED可以发出蓝光，与YAG黄光荧光粉一起封装就能混合发出白光。照明产业离不开白光源，而且LED又具有安全、高效、节能等诸多优点，是新一代的固体照明光源，所以最近十年的LED产业和相关技术发展很迅速，目前GaN基LED的产业和前沿技术的工作是热点内容。
外延结构的设计和生长是 LED的前沿关键技术，特别是大功率大电流下的GaN基LED器件的结构设计和生长技术。传统的GaN基LED外延结构，一般是在蓝宝石衬底上依次生长成核层、未掺杂GaN层、n型GaN层、多量子阱发光、AlGaN阻档层和p型GaN层。由于传统的LED结构只采用单一的AlGaN电子阻档层，所以对电子的阻档能力不足，造成电子泄露明显，引起LED器件内部电子空穴的有效辐射复合率低，从而致使LED内量子效率和光输出效率不高。
目前LED器件的ESD（ElectroStatic discharge，静电放电）防护的主要方法是通过提高LED外延结构的质量，并在LED外延结构中加入齐纳二极管或增加电流扩展层来实现。比如中国发明专利公开说明书CN101335313(公开日2008年12月31日)公开了一种LED结构的n型氮化物层中间***不掺杂的氮化物层、或者在 n 型氮化物层和发光层之间***不掺杂的氮化物层，其所形成的新LED外延结构就相当于增加了一个电容，从而提高ESD的防护性能。
发明内容
本发明所要解决的技术问题是提供一种GaN基LED外延结构，该结构可以提高LED的发光效率和增强ESD的防护能力。
为解决上述技术问题，本发明的GaN基LED外延结构，自下而上包括 ：GaN成核层、未掺杂GaN层、n型GaN层、多量子阱发光层、电子阻档层和p型GaN层，所述电子阻档层是由AlxGa1-xN层、多周期GaN/InyGa1-yN超晶格结构层和AlzGa1-zN层(简称为A-SL-A层)构成；其中, 0<x≤0.8, 0<y≤0.2, 0<z≤0.5。
本发明的关键特点之一是在多量子阱发光层与p型GaN层之间***了A-SL-A结构的电子阻档层。所述电子阻档层的结构是AlxGa1-xN层生长在LED外延结构的发光层之上，接着生长多周期的GaN/InyGa1-yN超晶格结构层，最后生长AlzGa1-zN层。所述电子阻档层的多周期GaN/InyGa1-yN超晶格结构层，其周期数在2至15之间，而超晶格结构中GaN和InyGa1-yN材料厚度都在1nm至6nm之间。所述电子阻档层中的AlxGa1-xN层和AlzGa1-zN层的最大厚度都不超过20nm。
与现有技术相比，本发明的有益效果是：通过在多量子阱发光层与p型GaN层之间***了A-SL-A结构的电子阻档层，能够有效把电子限制在发光层中，增强发光区电子与空穴的辐射复合的几率，进而提高LED的发光效率。另一方面，A-SL-A结构的电子阻档层加入到LED外延结构中，就相当于在LED结构中增加了多个电容，能使LED有更好的抗ESD能力。
附图说明
图1为本发明GaN基LED外延结构的示意图；
图2为本发明GaN基LED外延结构中的电子阻档层示意图；
图3为实例中新型GaN基LED外延结构中实施例的工作电流与内量子发光效率结果图。
图4为实例中新型GaN基LED外延结构中实施例的工作电流与光输出功率结果图。
图中：1为衬底； 2为成核层；3为未掺杂GaN层；4为n型GaN层；5为多量子阱发光层；6为A-SL-A电子阻档层；61为AlxGa1-xN层；62为GaN层；63为InyGa1-yN层；64为AlzGa1-zN层；7为p型GaN层。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明，但本发明的实施方式不限于此。
该实施例中，GaN基LED外延结构是在蓝宝石（Al2O3）衬底上首先生长一层厚度25nm的GaN材料成核层，然后在成核层表面上生长厚度1um未掺杂GaN层,接着依次生长Si掺杂GaN的n型GaN层（厚度为2um,浓度为5×1018 cm-3）、6周期In0.15Ga0.85N/GaN的多量子阱发光层（In0.15Ga0.85N和 GaN厚度分别为2.5nm和10nm）、电子阻档层（作为实例，AlxGa1-xN的x为0.15, InyGa1-yN中的y为0.03, AlzGa1-zN层中的z为0.15,各层厚度都为1nm，GaN/InyGa1-yN超晶格结构的周期数为9），和Mg掺杂GaN的p型GaN层（厚度0.3um,浓度为7×1017cm-3）。该外延结构采用的是原子层外延生长方法，可以是MOCVD或MBE等方法。
对该实施例的LED外延结构进行光电性能分析，得到的分析结果见图3和图4所示。由图3得知，本发明的新型GaN基LED外延结构有更好的内量子效率，特别在较大工作电流（200mA）下，仍保持较低的衰减（仅2.1%），显示本实施例采用的电子阻档层能很好限制电子的泄露。而传统GaN基LED外延结构的内量子效率较低，在200A工作电流下，发光效率衰减较快，达到21.2% 。由图4得知，本实施例的GaN基LED外延结构比传统结构有更高的光输出功率（对LED切割成300um×300um尺寸芯片来进行测试比较）。
此外，通过对本发明实施例的GaN基LED外延结构进行抗ESD性能测试，在人体抗静电模式测试下（试验3次，每次间隔1秒），当反向电压达到2500V时外延结构的反向电流值仍为O。而传统的GaN基LED外延结构在反向电压达到1500V左右就会出现较大的反向电流值，即外延结构已受到破坏，这样的比较试验说明本实施例的GaN基LED外延结构有更好的抗ESD能力。
以上实施例的厚度、工艺参数等均为示意，熟悉本领域的技术人员在不违反本发明思想与精神的前提下所出的任何改变或修饰，均应视作在本发明的保护范围之内。例如作为更多的实例，在其他条件不变的情况下，使电子阻档层中的AlxGa1-xN的x为0.8,InyGa1-yN中的y为0.2, AlzGa1-zN层中的z为0.5,各层厚度都为1nm，GaN/InyGa1-yN超晶格结构的周期数为3，通过同样的测试方法，在前述限定的范围内都同样能得出与上述实例相同的结论。
Claims (4)
1.一种GaN基LED外延结构，包括在衬底上依次生长的GaN成核层、未掺杂GaN层、n型GaN层、多量子阱发光层、电子阻档层和p型GaN层，其特征在于：所述电子阻档层是由AlxGa1-xN层、多周期GaN/InyGa1-yN超晶格结构层和AlzGa1-zN层构成；其中, 0<x≤0.8, 0<y≤0.2, 0<z≤0.5。
2.根据权利要求1所述的GaN基LED外延结构，其特征在于所述电子阻档层中的AlxGa1-xN层是生长在LED外延结构的发光层之上，接着生长多周期的GaN/InyGa1-yN超晶格结构层，然后再生长AlzGa1-zN层。
3.根据权利要求1或2所述的GaN基LED外延结构，其特征在于所述多周期GaN/InyGa1-yN超晶格结构层，其周期数为2至15，每个周期依次包括GaN层和InyGa1-yN材料层，每个GaN层和InyGa1-yN材料层的厚度均为1nm至6nm。
4.根据权利要求3所述的GaN基LED外延结构，其特征在于所述电子阻档层中的AlxGa1-xN层和AlzGa1-zN层的厚度都不超过20nm。
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