CN105139916A - Carbon powder doped molybdenum-based thick film resistance paste and preparation method thereof - Google Patents
Carbon powder doped molybdenum-based thick film resistance paste and preparation method thereof Download PDFInfo
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- CN105139916A CN105139916A CN201510375327.1A CN201510375327A CN105139916A CN 105139916 A CN105139916 A CN 105139916A CN 201510375327 A CN201510375327 A CN 201510375327A CN 105139916 A CN105139916 A CN 105139916A
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Abstract
The invention discloses carbon powder doped molybdenum-based thick film resistance paste and a preparation method thereof. The carbon powder doped molybdenum-based thick film resistance paste is characterized in that functional phase components, by mass, are 15 to 30 parts of bismuth tungstate, 20 to 30 parts of palladium oxide, 10 to 15 parts of ruthenium dioxide, 2 to 6 parts of GaAs and 0.05 to 1.8 parts of carbon powder; inorganic bonding phase components, by mass, are 10 to 30 parts of calcium oxide, 5 to 10 parts of silicon dioxide, 8 to 12 parts of aluminum oxide, 10 to 15 parts of barium sulfate, 1 to 3 parts of diatomaceous earth and 2 to 8 parts of glass fiber; and organic carrier phase components, by mass, are 30 to 50 parts of ethyl cellulose, 10 to 15 parts of tributyl citrate, 6 to 10 parts of polyvinyl alcohol, 10-20 parts of perchloro-ethylene resin and 5 to 8 parts of chlorinated paraffin. The resistance paste disclosed by the invention is good in performance stability, high in resistance precision and good in reproducibility.
Description
Technical field
The invention belongs to resistance device technical field, be specifically related to a kind of carbon dust doping molybdenum base thick-film resistor paste and preparation method thereof.
Background technology
Resistance slurry a kind ofly melts the multidisciplinary field technology-intensive high-tech products such as metallurgy, chemistry, physics, electronic technology, analysis and testing technology.For adapting to printing, sintering process requires and application request, and he must possess impressionability, functional characteristic and processing compatibility.Conventional resistance slurry is by function phase, Binder Phase and organic carrier three part, the uniform suspension liquid of a kind of thickness mixed by a certain percentage.The most critical factor affecting resistance slurry electrical property is function phase constituent, and in recent years, constantly expand the selection of function phase constituent, the performance of resistance slurry also progressively improves.
Film resistor and thick-film resistor are logical becomes film resistance, and the two mainly carries out distinguishing from preparation technology and thicknesses of layers two aspect.Thick-film resistor take resistance slurry as raw material, by thick-film techniques such as silk screen printing, spraying and sintering by the electronic devices and components of built-up circuit and line thereof, makes integrated circuit formed on an insulating substrate with the form of thick film.The thickness of film is generally several to tens microns, thicker than film.Thick-film resistor comprises traditional charcoal-epoxy resin thick-film resistor, metallo-organic compound thick-film resistor and polymer thick film resistor etc.Function in thick-film resistor material mostly is the metal or Inorganic Non-metallic Materials with satisfactory electrical conductivity and thermal stability mutually, inorganic bond mutually mainly various insulating properties and the excellent glass of manufacturability or resin, conductive particle is bonded on substrate by he, makes thick-film resistor have required mechanical performance and electrical property.
Summary of the invention
The invention provides a kind of carbon dust doping molybdenum base thick-film resistor paste and preparation method thereof, resistance slurry stability is good, resistance accuracy is high, and reproducibility is good.
The technical solution used in the present invention is:
A kind of carbon dust doping molybdenum base thick-film resistor paste, function phase component and each constituent mass number as follows: bismuth tungstate 15 ~ 30 parts, palladium oxide 20 ~ 30 parts, ruthenic oxide 10 ~ 15 parts, GaAs2 ~ 6 part, carbon dust 0.05 ~ 1.8 part;
Inorganic bond phase component and each constituent mass number as follows: 10 ~ 30 parts, calcium oxide, silicon dioxide 5 ~ 10 parts, alundum (Al2O3) 8 ~ 12 parts, 10 ~ 15 parts, barium sulfate, 1 ~ 3 part, diatomite, 2 ~ 8 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 30 ~ 50 parts, tributyl citrate 10 ~ 15 parts, polyvinyl alcohol 6 ~ 10 parts, superchlorinated polyvinyl chloride resin 10 ~ 20 parts, chlorinated paraffin wax 5 ~ 8 parts.
Described carbon dust doping molybdenum base thick-film resistor paste, preferably, function phase component and each constituent mass number as follows: bismuth tungstate 20 ~ 28 parts, palladium oxide 22 ~ 26 parts, ruthenic oxide 12 ~ 14 parts, GaAs3 ~ 5 part, carbon dust 0.5 ~ 1.2 part;
Inorganic bond phase component and each constituent mass number as follows: 15 ~ 25 parts, calcium oxide, silicon dioxide 7 ~ 9 parts, alundum (Al2O3) 10 ~ 12 parts, 12 ~ 14 parts, barium sulfate, 1 ~ 3 part, diatomite, 4 ~ 6 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 30 ~ 50 parts, tributyl citrate 12 ~ 14 parts, polyvinyl alcohol 7 ~ 9 parts, superchlorinated polyvinyl chloride resin 14 ~ 18 parts, chlorinated paraffin wax 6 ~ 7 parts.
Described carbon dust doping molybdenum base thick-film resistor paste, further preferably, function phase component and each constituent mass number as follows: bismuth tungstate 24 parts, palladium oxide 24 parts, ruthenic oxide 13 parts, GaAs4 part, carbon dust 0.9 part;
Inorganic bond phase component and each constituent mass number as follows: 20 parts, calcium oxide, silicon dioxide 8 parts, alundum (Al2O3) 11 parts, 13 parts, barium sulfate, 2 parts, diatomite, 5 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 40 parts, tributyl citrate 13 parts, polyvinyl alcohol 8 parts, superchlorinated polyvinyl chloride resin 16 parts, chlorinated paraffin wax 6.5 parts.
The preparation method of described carbon dust doping molybdenum base thick-film resistor paste, comprises the steps:
1) by bismuth tungstate, palladium oxide, ruthenic oxide and GaAs in ball grinder, be that ball-milling medium carries out ball milling activation with absolute ethyl alcohol, mix grinding evenly and control average grain diameter within the scope of 1 ~ 6 μm, then adds carbon dust, at 70 ~ 90 DEG C, water-bath is dried, and grinding distribution;
2) mixed powder that step 1) is disperseed is placed in chamber type electric resistance furnace to sinter, controlling heating rate is 10 ~ 30 DEG C/min, is warming up to 600 ~ 800 DEG C, insulation 3 ~ 5h; Be cooled to room temperature, for subsequent use;
3) melting in Si-Mo rod cabinet-type electric furnace after being mixed in proportion by inorganic bond phase component, then pours in cold water, and shrend is placed in ball grinder, is that ball-milling medium carries out ball milling with distilled water, after ball milling glass dust, suction filtration, oven dry, dispersion are for subsequent use;
4) organic carrier mixes in proportion, and adds step 2) and the material of step 3), dispersed with stirring, obtains carbon dust doping molybdenum base thick-film resistor paste through three-roll rolling.
In step 1), mix grinding equal control average grain diameter is 2 μm.
Step 1) water-bath bake out temperature is 80 DEG C.
Step 2) in control heating rate be 20 DEG C/min, be warming up to 700 DEG C, insulation 4h.
In step 3), smelting technology condition is: initial temperature 100 DEG C, maintains 10 ~ 20min, is warming up to 500 ~ 800 DEG C with the heating rate of 10 DEG C/min, maintains 30 ~ 50min, is warming up to 1000 DEG C with the heating rate of 20 DEG C/min, maintains 80 ~ 100min.
Beneficial effect: the invention provides a kind of carbon dust doping molybdenum base thick-film resistor paste and preparation method thereof, resistance slurry stability is good, resistance accuracy is high, and reproducibility is good.
Embodiment
Embodiment 1
A kind of carbon dust doping molybdenum base thick-film resistor paste, function phase component and each constituent mass number as follows: bismuth tungstate 15 parts, palladium oxide 20 parts, ruthenic oxide 10 parts, GaAs2 part, carbon dust 0.05 part;
Inorganic bond phase component and each constituent mass number as follows: 10 parts, calcium oxide, silicon dioxide 5 parts, alundum (Al2O3) 8 parts, 10 parts, barium sulfate, 1 part, diatomite, 2 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 30 parts, tributyl citrate 10 parts, polyvinyl alcohol 6 parts, superchlorinated polyvinyl chloride resin 10 parts, chlorinated paraffin wax 5 parts.
Preparation method, comprises the steps:
1) by bismuth tungstate, palladium oxide, ruthenic oxide and GaAs in ball grinder, be that ball-milling medium carries out ball milling activation with absolute ethyl alcohol, mix grinding evenly and control average grain diameter within the scope of 2 μm, then adds carbon dust, and at 80 DEG C, water-bath is dried, and grinding distribution;
2) mixed powder that step 1) is disperseed is placed in chamber type electric resistance furnace to sinter, controlling heating rate is 20 DEG C/min, is warming up to 700 DEG C, insulation 4h; Be cooled to room temperature, for subsequent use;
3) melting in Si-Mo rod cabinet-type electric furnace after being mixed in proportion by inorganic bond phase component, then pours in cold water, and shrend is placed in ball grinder, is that ball-milling medium carries out ball milling with distilled water, after ball milling glass dust, suction filtration, oven dry, dispersion are for subsequent use; Smelting technology condition is: initial temperature 100 DEG C, maintains 15min, is warming up to 700 DEG C with the heating rate of 10 DEG C/min, maintains 40min, is warming up to 1000 DEG C with the heating rate of 20 DEG C/min, maintains 90min.
4) organic carrier mixes in proportion, and adds step 2) and the material of step 3), dispersed with stirring, obtains carbon dust doping molybdenum base thick-film resistor paste through three-roll rolling.
Embodiment 2
A kind of carbon dust doping molybdenum base thick-film resistor paste, function phase component and each constituent mass number as follows: bismuth tungstate 30 parts, palladium oxide 30 parts, ruthenic oxide 15 parts, GaAs6 part, carbon dust 1.8 parts;
Inorganic bond phase component and each constituent mass number as follows: 30 parts, calcium oxide, silica 10 part, alundum (Al2O3) 12 parts, 15 parts, barium sulfate, 3 parts, diatomite, 8 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 50 parts, tributyl citrate 15 parts, polyvinyl alcohol 10 parts, superchlorinated polyvinyl chloride resin 20 parts, chlorinated paraffin wax 8 parts.
Preparation method, comprises the steps:
1) by bismuth tungstate, palladium oxide, ruthenic oxide and GaAs in ball grinder, be that ball-milling medium carries out ball milling activation with absolute ethyl alcohol, mix grinding evenly and control average grain diameter within the scope of 2 μm, then adds carbon dust, and at 80 DEG C, water-bath is dried, and grinding distribution;
2) mixed powder that step 1) is disperseed is placed in chamber type electric resistance furnace to sinter, controlling heating rate is 20 DEG C/min, is warming up to 700 DEG C, insulation 4h; Be cooled to room temperature, for subsequent use;
3) melting in Si-Mo rod cabinet-type electric furnace after being mixed in proportion by inorganic bond phase component, then pours in cold water, and shrend is placed in ball grinder, is that ball-milling medium carries out ball milling with distilled water, after ball milling glass dust, suction filtration, oven dry, dispersion are for subsequent use; Smelting technology condition is: initial temperature 100 DEG C, maintains 15min, is warming up to 700 DEG C with the heating rate of 10 DEG C/min, maintains 40min, is warming up to 1000 DEG C with the heating rate of 20 DEG C/min, maintains 90min.
4) organic carrier mixes in proportion, and adds step 2) and the material of step 3), dispersed with stirring, obtains carbon dust doping molybdenum base thick-film resistor paste through three-roll rolling.
Embodiment 3
A kind of carbon dust doping molybdenum base thick-film resistor paste, function phase component and each constituent mass number as follows: bismuth tungstate 20 parts, palladium oxide 22 parts, ruthenic oxide 12 parts, GaAs3 part, carbon dust 0.5 part;
Inorganic bond phase component and each constituent mass number as follows: 15 parts, calcium oxide, silicon dioxide 7 parts, alundum (Al2O3) 10 parts, 12 parts, barium sulfate, 1 part, diatomite, 4 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 30 parts, tributyl citrate 12 parts, polyvinyl alcohol 7 parts, superchlorinated polyvinyl chloride resin 14 parts, chlorinated paraffin wax 6 parts.
Preparation method, comprises the steps:
1) by bismuth tungstate, palladium oxide, ruthenic oxide and GaAs in ball grinder, be that ball-milling medium carries out ball milling activation with absolute ethyl alcohol, mix grinding evenly and control average grain diameter within the scope of 2 μm, then adds carbon dust, and at 80 DEG C, water-bath is dried, and grinding distribution;
2) mixed powder that step 1) is disperseed is placed in chamber type electric resistance furnace to sinter, controlling heating rate is 20 DEG C/min, is warming up to 700 DEG C, insulation 4h; Be cooled to room temperature, for subsequent use;
3) melting in Si-Mo rod cabinet-type electric furnace after being mixed in proportion by inorganic bond phase component, then pours in cold water, and shrend is placed in ball grinder, is that ball-milling medium carries out ball milling with distilled water, after ball milling glass dust, suction filtration, oven dry, dispersion are for subsequent use; Smelting technology condition is: initial temperature 100 DEG C, maintains 15min, is warming up to 700 DEG C with the heating rate of 10 DEG C/min, maintains 40min, is warming up to 1000 DEG C with the heating rate of 20 DEG C/min, maintains 90min.
4) organic carrier mixes in proportion, and adds step 2) and the material of step 3), dispersed with stirring, obtains carbon dust doping molybdenum base thick-film resistor paste through three-roll rolling.
Embodiment 4
A kind of carbon dust doping molybdenum base thick-film resistor paste, function phase component and each constituent mass number as follows: bismuth tungstate 28 parts, palladium oxide 26 parts, ruthenic oxide 14 parts, GaAs5 part, carbon dust 1.2 parts;
Inorganic bond phase component and each constituent mass number as follows: 25 parts, calcium oxide, silicon dioxide 9 parts, alundum (Al2O3) 12 parts, 14 parts, barium sulfate, 3 parts, diatomite, 6 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 50 parts, tributyl citrate 14 parts, polyvinyl alcohol 9 parts, superchlorinated polyvinyl chloride resin 18 parts, chlorinated paraffin wax 7 parts.
Preparation method, comprises the steps:
1) by bismuth tungstate, palladium oxide, ruthenic oxide and GaAs in ball grinder, be that ball-milling medium carries out ball milling activation with absolute ethyl alcohol, mix grinding evenly and control average grain diameter within the scope of 2 μm, then adds carbon dust, and at 80 DEG C, water-bath is dried, and grinding distribution;
2) mixed powder that step 1) is disperseed is placed in chamber type electric resistance furnace to sinter, controlling heating rate is 20 DEG C/min, is warming up to 700 DEG C, insulation 4h; Be cooled to room temperature, for subsequent use;
3) melting in Si-Mo rod cabinet-type electric furnace after being mixed in proportion by inorganic bond phase component, then pours in cold water, and shrend is placed in ball grinder, is that ball-milling medium carries out ball milling with distilled water, after ball milling glass dust, suction filtration, oven dry, dispersion are for subsequent use; Smelting technology condition is: initial temperature 100 DEG C, maintains 15min, is warming up to 700 DEG C with the heating rate of 10 DEG C/min, maintains 40min, is warming up to 1000 DEG C with the heating rate of 20 DEG C/min, maintains 90min.
4) organic carrier mixes in proportion, and adds step 2) and the material of step 3), dispersed with stirring, obtains carbon dust doping molybdenum base thick-film resistor paste through three-roll rolling.
Embodiment 5
A kind of carbon dust doping molybdenum base thick-film resistor paste, function phase component and each constituent mass number as follows: bismuth tungstate 24 parts, palladium oxide 24 parts, ruthenic oxide 13 parts, GaAs4 part, carbon dust 0.9 part;
Inorganic bond phase component and each constituent mass number as follows: 20 parts, calcium oxide, silicon dioxide 8 parts, alundum (Al2O3) 11 parts, 13 parts, barium sulfate, 2 parts, diatomite, 5 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 40 parts, tributyl citrate 13 parts, polyvinyl alcohol 8 parts, superchlorinated polyvinyl chloride resin 16 parts, chlorinated paraffin wax 6.5 parts.
Preparation method, comprises the steps:
1) by bismuth tungstate, palladium oxide, ruthenic oxide and GaAs in ball grinder, be that ball-milling medium carries out ball milling activation with absolute ethyl alcohol, mix grinding evenly and control average grain diameter within the scope of 2 μm, then adds carbon dust, and at 80 DEG C, water-bath is dried, and grinding distribution;
2) mixed powder that step 1) is disperseed is placed in chamber type electric resistance furnace to sinter, controlling heating rate is 20 DEG C/min, is warming up to 700 DEG C, insulation 4h; Be cooled to room temperature, for subsequent use;
3) melting in Si-Mo rod cabinet-type electric furnace after being mixed in proportion by inorganic bond phase component, then pours in cold water, and shrend is placed in ball grinder, is that ball-milling medium carries out ball milling with distilled water, after ball milling glass dust, suction filtration, oven dry, dispersion are for subsequent use; Smelting technology condition is: initial temperature 100 DEG C, maintains 15min, is warming up to 700 DEG C with the heating rate of 10 DEG C/min, maintains 40min, is warming up to 1000 DEG C with the heating rate of 20 DEG C/min, maintains 90min.
4) organic carrier mixes in proportion, and adds step 2) and the material of step 3), dispersed with stirring, obtains carbon dust doping molybdenum base thick-film resistor paste through three-roll rolling.
Carry out performance test to the carbon dust doping molybdenum base thick-film resistor paste obtained in embodiment 1 ~ 5, method of testing is with reference to corresponding national standard, and test result is in table 1.
Table 1:
Claims (8)
1. a carbon dust doping molybdenum base thick-film resistor paste, is characterized in that, function phase component and each constituent mass number as follows: bismuth tungstate 15 ~ 30 parts, palladium oxide 20 ~ 30 parts, ruthenic oxide 10 ~ 15 parts, GaAs2 ~ 6 part, carbon dust 0.05 ~ 1.8 part;
Inorganic bond phase component and each constituent mass number as follows: 10 ~ 30 parts, calcium oxide, silicon dioxide 5 ~ 10 parts, alundum (Al2O3) 8 ~ 12 parts, 10 ~ 15 parts, barium sulfate, 1 ~ 3 part, diatomite, 2 ~ 8 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 30 ~ 50 parts, tributyl citrate 10 ~ 15 parts, polyvinyl alcohol 6 ~ 10 parts, superchlorinated polyvinyl chloride resin 10 ~ 20 parts, chlorinated paraffin wax 5 ~ 8 parts.
2. carbon dust doping molybdenum base thick-film resistor paste according to claim 1, is characterized in that, function phase component and each constituent mass number as follows: bismuth tungstate 20 ~ 28 parts, palladium oxide 22 ~ 26 parts, ruthenic oxide 12 ~ 14 parts, GaAs3 ~ 5 part, carbon dust 0.5 ~ 1.2 part;
Inorganic bond phase component and each constituent mass number as follows: 15 ~ 25 parts, calcium oxide, silicon dioxide 7 ~ 9 parts, alundum (Al2O3) 10 ~ 12 parts, 12 ~ 14 parts, barium sulfate, 1 ~ 3 part, diatomite, 4 ~ 6 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 30 ~ 50 parts, tributyl citrate 12 ~ 14 parts, polyvinyl alcohol 7 ~ 9 parts, superchlorinated polyvinyl chloride resin 14 ~ 18 parts, chlorinated paraffin wax 6 ~ 7 parts.
3. carbon dust doping molybdenum base thick-film resistor paste according to claim 1, is characterized in that, function phase component and each constituent mass number as follows: bismuth tungstate 24 parts, palladium oxide 24 parts, ruthenic oxide 13 parts, GaAs4 part, carbon dust 0.9 part;
Inorganic bond phase component and each constituent mass number as follows: 20 parts, calcium oxide, silicon dioxide 8 parts, alundum (Al2O3) 11 parts, 13 parts, barium sulfate, 2 parts, diatomite, 5 parts, glass fibre;
Organic carrier phase component and each constituent mass number as follows: ethyl cellulose 40 parts, tributyl citrate 13 parts, polyvinyl alcohol 8 parts, superchlorinated polyvinyl chloride resin 16 parts, chlorinated paraffin wax 6.5 parts.
4. the preparation method of carbon dust doping molybdenum base thick-film resistor paste according to claim 1, is characterized in that, comprise the steps:
1) by bismuth tungstate, palladium oxide, ruthenic oxide and GaAs in ball grinder, be that ball-milling medium carries out ball milling activation with absolute ethyl alcohol, mix grinding evenly and control average grain diameter within the scope of 1 ~ 6 μm, then adds carbon dust, at 70 ~ 90 DEG C, water-bath is dried, and grinding distribution;
2) mixed powder that step 1) is disperseed is placed in chamber type electric resistance furnace to sinter, controlling heating rate is 10 ~ 30 DEG C/min, is warming up to 600 ~ 800 DEG C, insulation 3 ~ 5h; Be cooled to room temperature, for subsequent use;
3) melting in Si-Mo rod cabinet-type electric furnace after being mixed in proportion by inorganic bond phase component, then pours in cold water, and shrend is placed in ball grinder, is that ball-milling medium carries out ball milling with distilled water, after ball milling glass dust, suction filtration, oven dry, dispersion are for subsequent use;
4) organic carrier mixes in proportion, and adds step 2) and the material of step 3), dispersed with stirring, obtains carbon dust doping molybdenum base thick-film resistor paste through three-roll rolling.
5. the preparation method of carbon dust doping molybdenum base thick-film resistor paste according to claim 4, is characterized in that: in step 1), mix grinding equal control average grain diameter is 2 μm.
6. the preparation method of carbon dust doping molybdenum base thick-film resistor paste according to claim 4, is characterized in that: step 1) water-bath bake out temperature is 80 DEG C.
7. the preparation method of carbon dust doping molybdenum base thick-film resistor paste according to claim 4, is characterized in that: step 2) in control heating rate be 20 DEG C/min, be warming up to 700 DEG C, insulation 4h.
8. the preparation method of carbon dust doping molybdenum base thick-film resistor paste according to claim 4, it is characterized in that: in step 3), smelting technology condition is: initial temperature 100 DEG C, maintain 10 ~ 20min, 500 ~ 800 DEG C are warming up to the heating rate of 10 DEG C/min, maintain 30 ~ 50min, be warming up to 1000 DEG C with the heating rate of 20 DEG C/min, maintain 80 ~ 100min.
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| CN201510375327.1A CN105139916B (en) | 2015-06-30 | 2015-06-30 | Carbon dust doping molybdenio thick-film resistor paste and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328251A (en) * | 2016-08-18 | 2017-01-11 | 陆川县华鑫电子厂 | Thick film resistor paste and preparation method thereof |
| CN107396467A (en) * | 2017-08-03 | 2017-11-24 | 合肥市大卓电力有限责任公司 | A kind of environment-friendly type resistance slurry and preparation method thereof |
| CN108550418A (en) * | 2018-05-18 | 2018-09-18 | 苏州天鸿电子有限公司 | A kind of thick-film resistor paste |
| CN108882404A (en) * | 2018-07-11 | 2018-11-23 | 郑州祥泰电子科技有限公司 | A kind of heating up rapid electronic heating formula of size |
| GB2608618A (en) * | 2021-07-06 | 2023-01-11 | Ferro Techniek Bv | Thick film heating element |
| CN116959776A (en) * | 2023-08-02 | 2023-10-27 | 四川永星电子有限公司 | Composite glass powder binder for ruthenium-based resistor paste, preparation method and application |
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| CN1182941A (en) * | 1996-06-25 | 1998-05-27 | 纳幕尔杜邦公司 | Conducting composition used as end electrode of sheet resistance |
| CN103429537A (en) * | 2011-06-21 | 2013-12-04 | 住友金属矿山株式会社 | Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element |
| CN104464892A (en) * | 2014-12-26 | 2015-03-25 | 常熟联茂电子科技有限公司 | Carbon glue thick-film resistor sizing |
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| JPS62119277A (en) * | 1985-11-18 | 1987-05-30 | Copal Co Ltd | Printing paste for thick film |
| CN1182941A (en) * | 1996-06-25 | 1998-05-27 | 纳幕尔杜邦公司 | Conducting composition used as end electrode of sheet resistance |
| CN103429537A (en) * | 2011-06-21 | 2013-12-04 | 住友金属矿山株式会社 | Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328251A (en) * | 2016-08-18 | 2017-01-11 | 陆川县华鑫电子厂 | Thick film resistor paste and preparation method thereof |
| CN107396467A (en) * | 2017-08-03 | 2017-11-24 | 合肥市大卓电力有限责任公司 | A kind of environment-friendly type resistance slurry and preparation method thereof |
| CN108550418A (en) * | 2018-05-18 | 2018-09-18 | 苏州天鸿电子有限公司 | A kind of thick-film resistor paste |
| CN108882404A (en) * | 2018-07-11 | 2018-11-23 | 郑州祥泰电子科技有限公司 | A kind of heating up rapid electronic heating formula of size |
| GB2608618A (en) * | 2021-07-06 | 2023-01-11 | Ferro Techniek Bv | Thick film heating element |
| CN116959776A (en) * | 2023-08-02 | 2023-10-27 | 四川永星电子有限公司 | Composite glass powder binder for ruthenium-based resistor paste, preparation method and application |
| CN116959776B (en) * | 2023-08-02 | 2024-01-23 | 四川永星电子有限公司 | Composite glass powder binder for ruthenium-based resistor paste, preparation method and application |
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| Publication number | Publication date |
|---|---|
| CN105139916B (en) | 2017-01-04 |
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