CN105137121A - Preparation method of low-stress acceleration meter - Google Patents
Preparation method of low-stress acceleration meter Download PDFInfo
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- CN105137121A CN105137121A CN201510661783.2A CN201510661783A CN105137121A CN 105137121 A CN105137121 A CN 105137121A CN 201510661783 A CN201510661783 A CN 201510661783A CN 105137121 A CN105137121 A CN 105137121A
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Abstract
The invention relates to a preparation method of a low-stress acceleration meter. The low-stress acceleration meter comprises a substrate layer (13), an electrode structure layer (1), a movable structure layer (14) and a cap layer (18). The preparation method comprises the following steps: 1, manufacturing of the substrate(13), a floating electrode flexible shallow cavity (2), substrate layer anchor points (15) and anti-adhesion bumps (12) are formed on a double polishing silicon wafer through photoetching and etching; 2 bonding of an SOI silicon wafer and the substrate layer (13), a shallow cavity (11), center anchor points (5), anti-adhesion bumps (8) and a suspension electrode (4) are formed through photoetching and etching; 3, bonding of the SOI silicon wafer and an electrode structure, a movable structure (10) and movable layer anchor points (22) are formed through photoetching and etching.; and 4 packaging of a cap (8). Advantages of the preparation method are that influence of thermal stress on the electrode structure can be greatly reduced so that consistency and repetition of the fixed support suspension electrode structure can be guaranteed, the processing technology is relatively simple and the preparation method is suitable for mass production.
Description
Technical field
The invention belongs to micromechanics electronic technology field, specifically a kind of preparation method of low stress accelerometer.
Background technology
Micro-mechanical accelerometer is a kind of mechanical quantity sensor be made based on microelectromechanical systems process technology, may be used for the measurement of the inertial parameters such as inertial force, pitch angle, vibration and impact.The capacitive accelerometer utilizing miromaching to make measuring accuracy, temperature characterisitic, utilize electrostatic force to carry out closed-loop measuring and self-inspection and easily integrated etc. with electronic circuit in there is unique advantage, detect at communications and transportation, Industry Control, inertial navigation, medical science, instrument, much fields such as military be widely used.
The microstructure of capacitor MEMS acceleration meter comprises sensitive structure and electrode structure usually.By the inertial force that sensitive structure input acceleration causes, mems accelerometer degree of will speed up signal converts electrical signal to.As a kind of force sensitive device, variation of ambient temperature causes thermal stress can cause the deformation of sensitive structure or fixed electorde, thus causes accelerometer zero output shift, and the full temperature hydraulic performance decline of sensor, reduces the synthesis precision of sensor.
At present, a kind of related art scheme reduces by the contact area reducing tube shell bottom and chip the chip thermal stress that variation of ambient temperature causes, technique scheme is the ameliorative way of encapsulation, need to increase Making mold expense, and consistance in processes process of tube shell bottom and chip contact area and reliability poor.
Summary of the invention
The object of the invention is to the above-mentioned deficiency overcoming prior art, a kind of preparation method of Z-axis direction low stress capacitor MEMS acceleration meter is provided, the accelerometer that the method prepares significantly can reduce stress that variation of ambient temperature, encapsulation and installation cause to the impact of accelerometer performance, and this structure adopts MEMS bulk silicon technological, processing technology is simple, reliability, the consistance of product are good, can realize batch micro operations.
Above-mentioned purpose of the present invention is mainly achieved by following technical solution:
A kind of
low stress accelerometer preparation method, described low stress accelerometer isa kind of Z-axis direction low stress capacitor MEMS acceleration meter, comprises substrate layer, electrode structure layer, movable structure layer and cap,
Substrate layer comprises substrate, the movable shallow chamber of suspension electrode, liner oxidation layer, overload-resistant salient point and the substrate anchor point of preventing adhesion of substrate;
Electrode structure layer comprises: electrode structure layer housing, suspension electrode structure and center anchor point is provided with in housing, suspension electrode structure both sides are provided with folding clamped beam and housing, anchor point both sides, center are provided with two-end fixed beam and are connected with housing, suspension electrode structure is provided with the overload-resistant salient point that prevents adhesion, and housing is provided with the movable shallow chamber of movable structure;
Movable structure layer comprises: arrange movable structure in movable structure outside framework, outside framework, movable layer anchor point is provided with in movable structure, movable layer anchor point two ends are respectively equipped with semi-girder and are connected with movable structure, movable structure side is also provided with one group of pad point, each pad point is respectively equipped with connected contact conductor, pad point and the outer of contact conductor are arranged with gap, a middle contact conductor is connected with the two-end fixed beam in electrode structure layer, and corresponding to the electrode structure layer respectively folding clamped beam of remaining contact conductor connects;
Cap comprises the dark chamber of block, block oxide layer and metal level;
Sensitive-mass block and the clamped suspension electrode of both-end form electric capacity, sensitive-mass block is asymmetric mass block, when one-piece construction is subject to the acceleration of Z-axis direction, mass can swing with acceleration thus cause left and right electric capacity differential change, by suspension electrode and contact conductor output signal, thus the acceleration of Z-axis direction detected.
In this low stress capacitor MEMS acceleration meter structure, described sensitive-mass block is suspended in above the clamped electrode structure of both-end by anchor point and brace summer, electrode structure is connected together by two-end fixed beam and substrate, electrode structure is flat, this both-end clamped Flat electrode structure surface distributed has and prevents adhesion and overload-resistant salient point, it is the movable shallow chamber of electrode below electrode structure, be distributed with equally in the movable shallow chamber of electrode and prevent adhesion and overload-resistant salient point, electrode structure is suspended in above the movable shallow chamber of electrode structure by two-end fixed beam, the movable shallow chamber of electrode structure is formed by etching on substrate.
Concrete preparation process is as follows:
Low stress capacitor MEMS acceleration meter structure of the present invention comprises 4 layers, and wherein substrate layer silicon chip used is two throwing silicon chips, is defined as two throwing silicon chip A; Suspension electrode structural sheet silicon chip used is soi wafer, definition soi wafer A; Movable structure layer silicon chip used is similarly soi wafer, is defined as soi wafer B; Silicon chip used of blocking a shot throws silicon chip for two, is defined as two throwing silicon chip B.
Step one, being prepared as follows of substrate layer:
(1) select two any one side of throwing silicon chip, be defined as front, carry out first time photoetching in two throwing silicon chip 1 front and etch forming shallow chamber and substrate layer anchor point;
(2) second time photoetching and the overload-resistant salient point that prevents adhesion of etching formation substrate layer is carried out at two throwing front side of silicon wafer;
Step 2, the basis of substrate layer is prepared suspension electrode structure:
(1) select soi wafer 1 as the initial silicon chip of suspension electrode structural sheet, soi wafer 1 is divided into 3 layers, be followed successively by top layer silicon, oxygen buried layer and substrate silicon from top to bottom, select soi wafer mainly to utilize the consistance of its top layer silicon thickness, ensure the consistance of suspension electrode thickness;
(2) utilize together with the top layer silicon face of soi wafer 1 is bonded to the substrate layer prepared by Si-Si bonding;
(3) CMP or KOH is utilized to corrode the substrate silicon of the suspension electrode structural sheet soi wafer 1 used together with being bonded to substrate layer or ICP etching is removed, BOE or gaseous state HF is utilized to remove oxygen buried layer, together with soi wafer 1 top layer silicon one side has been bonded to substrate layer, the substrate silicon of one side and oxygen buried layer do first time photoetching and etching forms the movable shallow chamber of movable structure and electrode layer anchor point upper after removing in addition, form the overload-resistant salient point that prevents adhesion through second time photoetching and etching, after third time photoetching and etching, form suspension electrode structure.
Step 3, movable structure is prepared on the basis of step 2:
By the top layer silicon of soi wafer 2 and suspension electrode structural sheet Si-Si bonding in together with, CMP or KOH is utilized to corrode or the removal of ICP etching, utilize BOE or gaseous state HF to remove oxygen buried layer, after photoetching and etching, form movable structure, movable layer anchor point, pad point and contact conductor.
Step 4, block encapsulation:
Through photoetching be etched in two any one side of throwing silicon chip B and prepare cavity, encapsulated by movable structure through wafer scale bonding, etching cap front, exposes electrode, completes the preparation of accelerometer.
This low stress capacitor MEMS acceleration meter structure adopts silicon to be main material, processes.
The present invention's tool compared with existing capacitor MEMS acceleration meter structure has the following advantages:
(1) fixed electorde structural change is in the past the clamped suspension electrode structure of both-end by the present invention, this suspension electrode structure makes accelerometer when variation of ambient temperature, the impact of thermal stress on electrode structure declines to a great extent, make electrode structure almost undeformed within the scope of full temperature, thus ensure that the symmetry of device single anchor point the right and left electric capacity within the scope of full temperature, improve the all-round performance of sensor.
(2) the present invention is by changing device inside electrode structure, reduce the impact of thermal stress on electrode structure, avoid the packaging technology of the outside shell of change and chip, and owing to utilizing soi wafer as electrode structure disk, ensure that consistance and the repeatability of clamped suspension electrode structure; Processing technology is fairly simple, all utilizes known MEMS technology technology to process, and is applicable to producing in enormous quantities.
Accompanying drawing explanation
Fig. 1 is low stress capacitor MEMS acceleration meter suspension electrode structure vertical view of the present invention;
Fig. 2 is low stress capacitor MEMS acceleration meter structure vertical sectional view of the present invention;
Fig. 3 is low stress capacitor MEMS acceleration meter movable structure layer vertical view of the present invention;
Fig. 4-Fig. 8 is low stress capacitor MEMS acceleration meter structural manufacturing process process flow diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, structure of the present invention is described further.
With reference to Fig. 1, Fig. 2, Fig. 3, structure of the present invention is divided into 4 layers, be respectively substrate layer, electrode structure layer, movable structure layer and cap, wherein substrate layer comprises: the movable shallow chamber 2 of substrate 13, suspension electrode, liner oxidation layer 9, overload-resistant salient point 12 and the substrate anchor point 15 of preventing adhesion of substrate;
Electrode structure layer comprises: electrode structure layer housing 1, the suspension electrode structure 4 arranged in housing 1 and center anchor point 5, suspension electrode structure 4 both sides are provided with folding clamped beam 7 and are connected with housing 1, center anchor point 5 both sides are provided with two-end fixed beam and are connected with housing 1, suspension electrode structure 4 is provided with the overload-resistant salient point 8 that prevents adhesion, and housing 1 is provided with the movable shallow chamber 11 of movable structure;
Movable structure layer comprises: arrange movable structure (i.e. sensitive-mass block) 10 in movable structure outside framework 14, outside framework 14, be provided with movable layer anchor point 22 in movable structure 10, and movable layer anchor point 22 two ends are respectively equipped with semi-girder 19 and are connected with movable structure 10.Movable structure 10 side is also provided with one group of pad point 20, and each pad point is respectively equipped with connected contact conductor 6, pad point and the outer of contact conductor 6 is arranged with gap 21.
Cap 18 comprises the dark chamber 18a of block, block oxide layer 17 and metal level 16.
As shown in Figure 1, described suspension electrode 4 is clamped in electrode structure layer housing 1 by folding clamped beam 7 both-end; Suspension electrode 4 is symmetrically distributed in center anchor point about 5, and center anchor point 5 both sides are respectively equipped with two-end fixed beam 3, and it is connected to electrode structure layer housing 1.Contact conductor 6 one end is connected with folding clamped beam 7, and one end is connected with pad point 20; Electrode structure 4 is symmetrically distributed in electrode structure layer center anchor point about 5; Pad point 20 and contact conductor 6 separate with electrode structure layer housing 1 and movable structure layer outside framework 14 by gap 21.
As shown in Figure 2, electrode structure 4 is positioned at below movable structure 10, and the movable shallow chamber 2 of electrode structure is positioned at below electrode structure 4, and electrode structure movable shallow chamber 2 surface distributed has the overload-resistant salient point 12 that prevents adhesion.
Electrode structure 4 is plate armature, and about being distributed in center anchor point, and both sides electrode area is equal.
The suspension electrode of electrode structure layer center anchor point 5 symmetria bilateralis distribution can be 1 and also can be 2, and even more, accompanying drawing is only schematic diagram, does not do several quantitative limitation to suspension electrode structure.
Above-mentioned substrate layer, electrode structure layer, movable structure layer and cap are silicon materials.
Accelerometer process flow diagram provided by the invention is as shown in Fig. 4-Fig. 8:
Low stress capacitor MEMS acceleration meter structure of the present invention comprises 4 layers, and wherein substrate layer silicon chip used is two throwing silicon chips, is defined as two throwing silicon chip A; Suspension electrode structural sheet silicon chip used is soi wafer, definition soi wafer A; Movable structure layer silicon chip used is similarly soi wafer, is defined as soi wafer B; Silicon chip used of blocking a shot throws silicon chip for two, is defined as two throwing silicon chip B.
(a). as shown in Figure 4, select any one side of two throwing silicon chip A as machined surface, shallow chamber figure is prepared in photoetching, utilize photoresist as restraining barrier, utilize dry etching to form the movable shallow chamber 2 of suspension electrode, utilize 120 DEG C of sulfuric acid to remove photoresist to wash by water after cleaning drying, salient point figure is prepared through second time photoetching, continue to utilize photoresist as restraining barrier, utilize dry etching to form substrate overload-resistant salient point 12 and the substrate anchor point 15 of preventing adhesion, utilize 120 DEG C of sulfuric acid to remove photoresist to wash by water after cleaning drying.
(b). as Fig. 5, shown in Fig. 1, select soi wafer A as suspension electrode structural sheet disk, Si-Si bonding is utilized the top layer silicon of soi wafer A and the substrate 13 prepared to be bonded together, CMP or KOH corrosion or ICP etching is utilized to remove the substrate silicon of soi wafer A, BOE or gaseous state HF is utilized to remove oxygen buried layer, together with soi wafer A top layer silicon one side has been bonded to substrate 13, in addition one side substrate silicon and oxygen buried layer remove after upper do first time photoetching, photoresist is as restraining barrier, the movable shallow chamber 11 of movable structure is formed through dry etching, utilize 120 DEG C of sulfuric acid to remove photoresist after cleaning to wash by water drying, do second time photoetching, photoresist is as restraining barrier, the overload-resistant salient point 8 that prevents adhesion is formed through dry etching.
(c). as shown in Fig. 6, Fig. 2, utilize 120 DEG C of sulfuric acid to remove photoresist after cleaning and to wash by water dryings, do third time photoetching, photoresist as restraining barrier, through dry etching formation suspension electrode structure 4 center anchor point 5.
(d). as Fig. 7, shown in Fig. 3, select soi wafer B as movable structure layer disk, utilize Si-Si bonding together with the top layer silicon of soi wafer B being bonded to the suspension electrode structural sheet prepared, CMP or KOH corrosion or ICP etching is utilized to remove the substrate silicon of soi wafer B, BOE or gaseous state HF is utilized to remove oxygen buried layer, together with soi wafer B top layer silicon one side has been bonded to suspension electrode structural sheet, in addition one side substrate silicon and oxygen buried layer remove after do photoetching upper, photoresist is as restraining barrier, movable structure 10 is formed through dry etching, semi-girder 19, movable layer anchor point 22, gap 21, pad point 20, and contact conductor 6.
(e). as shown in Figure 8, select two silicon chip B that throws for processing block 18, the first silica 17 of thermal oxide growth about 1 μm, then photoetching dark chamber graph window, BOE removes graph window zone oxidation layer, 120 DEG C of sulfuric acid remove photoresist dryings of washing by water after cleaning, and the dark chamber 18a of KOH corrosion formation, utilizes magnetron sputtering gold thin film 16, through second time photoetching, graphical gold thin film, finally utilizes together with block to be bonded to the device processed before by eutectic bonding, completes the preparation of accelerometer.
The advantage of the low stress capacitor MEMS acceleration meter of the embodiment of the present invention is described below in conjunction with Fig. 2.Specifically, when the STRESS VARIATION caused installed by environment temperature, encapsulation and sensor, for existing Z-axis direction capacitor MEMS acceleration meter, the above-mentioned stress caused can make substrate generation deformation, because electrode structure 4 directly contacts with substrate 13, therefore drive electrode structure 4 equally deformation to occur, thus cause accelerometer left and right electric capacity asymmetric, cause accelerometer output shift.And for the arrangements of accelerometers with suspension electrode of the embodiment of the present invention, when stress described above causes substrate 13 that deformation occurs, be suspended on substrate 13 because electrode structure 4 both-end is clamped, therefore, substrate 13 can not cause electrode structure 4 that deformation occurs when deformation, ensure that the symmetry of accelerometer left and right electric capacity, thus the stress that variation of ambient temperature is caused and encapsulation, installing the stress produced only is reflected in the distortion of substrate 13, reduce the impact of accelerometer electrode structure 4 by environmental stress, improve synthesis precision and the environmental suitability of accelerometer.
Claims (1)
1.
a preparation method for low stress accelerometer, described low stress accelerometer isa kind of Z-axis direction low stress capacitor MEMS acceleration meter, comprises substrate layer, electrode structure layer, movable structure layer and cap;
Substrate layer comprises substrate (13), the movable shallow chamber (2) of suspension electrode, liner oxidation layer (9), the overload-resistant salient point that prevents adhesion (12) of substrate and substrate anchor point (15);
Electrode structure layer comprises: electrode structure layer housing (1), suspension electrode structure (4) and center anchor point (5) is provided with in housing (1), suspension electrode structure (4) both sides are provided with folding clamped beam (7) and are connected with housing (1), center anchor point (5) both sides are provided with two-end fixed beam (3) and are connected with housing (1), suspension electrode structure (4) is provided with the overload-resistant salient point that prevents adhesion (8), and housing (1) is provided with the movable shallow chamber (11) of movable structure;
Movable structure layer comprises: movable structure outside framework (14), movable structure (10) is set in outside framework (14), movable layer anchor point (22) is provided with in movable structure (10), movable layer anchor point (22) two ends are respectively equipped with semi-girder (19) and are connected with movable structure (10), movable structure (10) side is also provided with one group of pad point (20), each pad point is respectively equipped with connected contact conductor (6), pad point and the outer of contact conductor (6) are arranged with gap (21), a middle contact conductor (6) is connected with two-end fixed beam (3), remaining contact conductor (6) connects respectively at corresponding folding clamped beam (7),
Cap (18) comprises the dark chamber of block (18a), block oxide layer (17) and metal level (16);
It is characterized in that comprising the following steps:
Step one, the making of substrate (13)
(1). select two any one side of throwing silicon chip A, be defined as front, carry out first time photoetching and etch forming the movable shallow chamber (2) of suspension electrode and substrate layer anchor point (15) at two throwing front side of silicon wafer;
(2). second time photoetching and the overload-resistant salient point that prevents adhesion (12) of etching formation substrate layer is carried out in two throwing silicon chip A front;
Step 2, the basis of substrate layer is prepared suspension electrode layer:
(1). select soi wafer A as the initial silicon chip of suspension electrode structural sheet;
(2). utilize Si-Si bonding by the top layer silicon face of soi wafer A and substrate layer (13) bonding prepared;
(3). utilize CMP or KOH to corrode the substrate silicon of the soi wafer A with substrate layer bonding or ICP etches and removes substrate silicon, BOE or gaseous state HF is utilized to remove oxygen buried layer, the top layer silicon one side of soi wafer A is bonded together with substrate layer, the substrate silicon of one side and oxygen buried layer do first time photoetching and etching forms the movable shallow chamber (11) of movable structure upper after removing in addition, form the overload-resistant salient point that prevents adhesion (8) through second time photoetching and etching, after third time photoetching and etching, form suspension electrode (4) and center anchor point (5);
Step 3, the basis of step 2 is prepared movable structure layer:
By the top layer silicon of soi wafer B and electrode structure layer Si-Si bonding in together with; CMP or KOH corrosion or ICP etching is utilized to go soi wafer B except substrate silicon; utilize BOE or gaseous state HF to remove soi wafer B oxygen buried layer, the top layer silicon of soi wafer B forms movable structure (10), semi-girder (19), movable layer anchor point (22), gap (21), pad point (20) and contact conductor (6) after photoetching and etching;
Step 4, block encapsulation:
Through photoetching be etched in two any one side of throwing silicon chip B and prepare cavity (18a), utilize magnetron sputtering gold thin film (16), through second time photoetching, graphical gold thin film, finally utilize together with block to be bonded to the movable structure layer processed before by eutectic bonding, complete the preparation of accelerometer.
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| CN106405151A (en) * | 2016-08-25 | 2017-02-15 | 华东光电集成器件研究所 | Method for preparing low stress Z-axis accelerometer |
| CN107673304A (en) * | 2017-08-12 | 2018-02-09 | 北方电子研究院安徽有限公司 | A kind of acceleration sensor structure for reducing embedding stress and preparation method thereof |
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| CN110668394B (en) * | 2019-08-27 | 2022-08-12 | 华东光电集成器件研究所 | Preparation method of anti-interference overload-resistant MEMS accelerometer |
| CN110668391A (en) * | 2019-08-27 | 2020-01-10 | 华东光电集成器件研究所 | Double-end fixed supporting plate type MEMS structure with stress release function |
| CN110668394A (en) * | 2019-08-27 | 2020-01-10 | 华东光电集成器件研究所 | Preparation method of anti-interference overload-resistant MEMS accelerometer |
| CN110683507A (en) * | 2019-08-27 | 2020-01-14 | 华东光电集成器件研究所 | Anti-interference MEMS device |
| CN111422827A (en) * | 2020-04-13 | 2020-07-17 | 中国兵器工业集团第二一四研究所苏州研发中心 | Wafer manufacturing process flow of high-performance MEMS inertial sensor |
| CN112034204A (en) * | 2020-08-01 | 2020-12-04 | 沈阳工业大学 | Linked contact capacitance type acceleration sensitive chip and manufacturing method thereof |
| CN112180121A (en) * | 2020-09-11 | 2021-01-05 | 中国船舶重工集团公司第七0七研究所 | Method for bonding pendulum component of high-stability quartz flexible accelerometer |
| CN113204079A (en) * | 2021-05-11 | 2021-08-03 | 北京理工大学 | Grid design method for MOEMS optical switch high overload resistant structure |
| CN113204079B (en) * | 2021-05-11 | 2022-07-15 | 北京理工大学 | Grid design method for MOEMS optical switch high overload resistant structure |
| CN113702664A (en) * | 2021-07-20 | 2021-11-26 | 北京航天控制仪器研究所 | Broadband MEMS accelerometer and preparation method thereof |
| CN114609413A (en) * | 2022-05-11 | 2022-06-10 | 绍兴圆方半导体有限公司 | Three-axis accelerometer |
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