CN105136869A - Polyaniline/iron oxide nano composite resistance-type material sensor, and preparation method thereof - Google Patents
Polyaniline/iron oxide nano composite resistance-type material sensor, and preparation method thereof Download PDFInfo
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- CN105136869A CN105136869A CN201510506166.5A CN201510506166A CN105136869A CN 105136869 A CN105136869 A CN 105136869A CN 201510506166 A CN201510506166 A CN 201510506166A CN 105136869 A CN105136869 A CN 105136869A
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Abstract
The invention discloses a polyaniline/iron oxide nano composite resistance-type material sensor, and a preparation method thereof. The polyaniline/iron oxide nano composite resistance-type material sensor comprises a ceramic substrate, an interdigital gold electrode, and a gas sensitive material which are arranged successively; the gas sensitive material is composed of a polyaniline/iron oxide nano composite, wherein p-n junction effects formed on the interface of p-type polyaniline and n-type iron oxide are capable of increasing response sensitivity of the polyaniline/iron oxide nano composite resistance-type material sensor on gas at room temperature greatly, accelerating response, and improving stability, and a polyaniline layer is capable of reducing element resistance value greatly, and is convenient for testing on sensor resistance response characteristics. The polyaniline/iron oxide nano composite resistance-type material sensor possesses high response sensitivity on ammonia gas at room temperature; resilience is excellent; response is rapid; stability is high; and the polyaniline/iron oxide nano composite resistance-type material sensor can be widely applied to accurate measuring and controlling of ammonia gas concentration in industrial and agricultural production processes and the atmosphere environment. The invention also provides a preparation method of the polyaniline/iron oxide nano composite resistance-type material sensor; and the preparation method is simple, is low in cost, and is especially suitable for batch production.
Description
Technical field
The present invention relates to sensor field, be specifically related to a kind of hypersensitivity polyaniline/iron oxide resistor-type material gas sensor and preparation method thereof.
Background technology
Metal oxide semiconductor has great scientific research value and actual techniques using value.Comparatively conventional has SnO
2, ZnO, TiO
2, Fe
2o
3deng.These metal oxides mostly are has the wide N-shaped multifunctional semiconductor that can be with; there is (the L.b.Luo such as very excellent electrical properties, photocatalysis property, electrochemical properties, optical and electrical properties, gas sensing, humidity sensor, optical property; F.x.LiangandJ.s.Jie; Nanotechnology; 2011; 22,485701; M.Batzill, K.Katsiev, J.M.Burst, U.Diebold, A.M.ChakaandB.Delley, PhysicalReviewB, 2005,72,165414; H.Zhang, Q.He, X.Zhu, D.Pan, X.DengandZ.Jiao, CrystEngComm, 2012,14,3169-3176.).Due to the character of these excellences, researchers expand the research in every field application to described metal oxide semiconductor, such as solar cell, ultracapacitor, optoelectronic device, transistor, lithium ion battery, humidity sensor and gas sensor etc.
The preparation method of the semiconductor oxide ferrum nano material of current existence mainly contains atomic layer deposition method, thermal evaporation techniques, calcining, electrochemical synthesis, sol-gel process, chemical vapour deposition etc., these methods often need more special technology, large-scale instrument, pyroprocessing etc., and cost is higher and energy resource consumption is larger.In addition, after the semiconductor oxide ferrum nano material of preparation so often needs again to disperse, then be deposited on could for the preparation of electron device in substrate.Therefore, semiconductor oxide ferrum nano material is prepared intermediate demand to device and is carried out transfer step, like this, not only increase operation prepared by device, if and in preparation process, the dispersed and deposition of nano material controls bad, also can affect the consistance of device, and can increase production cost.In addition, on the one hand, the preparation method of conventional semiconductor oxide ferrum nano material needs pyroprocessing usually, and flexible organic and polymer material substrate often cannot withstand high temperatures, which has limited the use of flexible polymer substrate, bring difficulty to the development and application of flexible photoelectric device.On the other hand, often exist between nano material and substrate in conjunction with imperfect problem above the device depositing preparation through again disperseing, make it there is larger contact impedance and affect charge transfer process like this, the performance of the photoelectric functional device to preparation is caused adverse effect.
But adopt the gas sensitivity prepared by these conductor oxidates not to be generally high especially, such as patented claim (method of low-temperature original position growth nanostructured metal oxide semiconductor and application before us, the sensitivity of the tin ash mentioned CN104807859A) and polypyrrole composite gas sensor only less than 80%, and is had any problem to the selective enumeration method of organic vapor.The present invention is directed to these not enough, propose supersensitive gas sensor, and its preparation process is specialized, instantiation, and obtained sensor has extraordinary selectivity.
Summary of the invention
For the deficiencies in the prior art, the invention provides polyaniline/ferric oxide nano composite resistance type material sensors and preparation method thereof.
The present invention adopts following technical scheme:
A kind of polyaniline/ferric oxide nano composite resistance type material sensors, comprise ceramic matrix, interdigital gold electrode and gas sensitive, described interdigital gold electrode is connected with lead-in wire, interdigital gold electrode is had at described ceramic matrix surface deposition, deposit gas sensitive at described ceramic matrix and interdigital gold electrode surfaces, described gas sensitive is made up of polyaniline/ferric oxide nano compound.
The interdigital gold electrode of described ceramic matrix surface deposition is 5 ~ 16 right, and the interdigital width of interdigital gold electrode is 20 ~ 200 μm, and interdigital gap is 20 ~ 200 μm.
The thickness of described gas sensitive is 50 ~ 600nm.
Described polyaniline/ferric oxide composite material is the water-soluble polyaniline of ferric oxide nano sheet and the polystyrolsulfon acid doping obtained by electrostatic spinning auxiliary water heat-treating methods and obtained.
According to a preparation method for described sensor, specifically comprise the steps:
1) mixed solution preparing semiconductor oxide iron presoma and spinning-aid agent obtains spinning liquid, after spinning liquid is formed nanofibres deposit to substrate surface by the method for electrostatic spinning, naturally dries;
2) described step 1) in the obtained substrate depositing nanofiber by hydrothermal treatment consists, obtain the semiconductor oxide iron with nanostructured of growth in situ in substrate;
3) at the polyaniline of obtained semiconductor oxide iron surface dip-coating one deck polystyrolsulfon acid doping, described sensor is obtained.
The iron of semiconductor oxide described in step 1) precursor concentration is 10 ~ 300mg/mL, and described spinning-aid agent concentration is 40 ~ 100mg/mL, the flow velocity preferably 0.1 ~ 10mL/h of described electrostatic spinning; Receiving range is preferably 5 ~ 30cm; Spinning voltage is preferably 5 ~ 30kV; Time of reception is preferably 0.5 ~ 60min.
Step 2) described in hydrothermal treatment consists temperature be preferably 120 ~ 180 DEG C; Hydrothermal conditions is preferably 6 ~ 24h.
The invention has the beneficial effects as follows:
1. the invention provides that a kind of equipment is simple, step is convenient, energy consumption is low, at any substrate semiconductor-on-insulator iron oxide growth in situ, especially growth in situ on a flexible substrate, be convenient to the growing method of the semiconductor oxide iron nanostructured preparing the advantages such as flexible device, greatly widen described semiconductor oxide iron application, become a kind of necessary means of described semiconductor oxide iron in the preparation nanostructured of each application.
2. preparation method of the present invention is low-temperature epitaxy (120-180 DEG C), it is good that the method has controllability, reaction conditions is gentle, described semiconductor oxide iron nanostructure growth is even, energy-output ratio is less, can reduce the plurality of advantages such as environmental pollution, especially, cryogenic conditions is especially applicable to the direct simple preparation of flexible device.
3. preparation method of the present invention is growth in situ, the original position preparation on different substrates of nanostructured semiconductor oxide iron material can be realized, then preparation section can be reduced, photoelectric functional device needed for direct acquisition, and the growth in situ of nano material is also conducive to the combination promoting material and substrate, reduce contact impedance, promote Charger transfer, improve stability etc.Thus promote the application of nanostructured semiconductor oxide iron in function element.Described semiconductor oxide iron nanostructured and substrate, between semiconductor oxide iron nanostructured and conducting polymer, be Ohmic contact, effectively can improve the sensitivity of prepared sensor, repeatability and stability.
4. the present invention adopts method of electrostatic spinning, and directly in substrate, in-situ deposition contains the nanofiber of slaine, subsequently by the hydrothermal treatment consists of lower temperature (lower than 180 DEG C), makes slaine converted in-situ contained in nanofiber be nanostructured iron oxide.Thus, achieve nanostructured iron oxide direct low-temperature original position growth at substrate surface in water-heat process, and significantly enhance the binding ability of itself and substrate.
5. the present invention prepared the semiconductor oxide iron nanostructured that comprises the method with conducting polymer compound after there is the gas sensor of the advantages such as very superior gas sensitization performance (highly sensitive, recovery good, selectivity is good).
6. the semiconductor oxide iron nanostructured prepared by the present invention and the I-V curve of conducting polymer show to there is strong interaction between described semiconductor oxide iron nanostructured and conducting polymer, this synergy can be utilized to improve electric conductivity at room temperature and the charge migration under promoting room temperature, there is very close synergy in the two, simultaneously with tunneling effect, and described semiconductor oxide iron nanostructured and substrate, between semiconductor oxide iron nanostructured and conducting polymer, be Ohmic contact.Especially, the interface of p-type polyaniline and N-shaped ferric oxide nano sheet forms p/n junction structure, after detecting gas molecule effect with ammonia etc., dissipation layer width is caused to increase, resistance variations increases, energy of activation and the physisorption enthalpy of gas absorption can be reduced simultaneously, thus its response sensitivity for gas is significantly improved.
Accompanying drawing explanation
Fig. 1 is the stereoscan photograph of the surface topography by the growth in situ semiconductor oxide iron nanostructured obtained by the embodiment of the present invention;
Fig. 2 is the stereoscan photograph of the surface topography by the gas sensor functional layer obtained by the embodiment of the present invention;
Fig. 3 is the response test result figure of the sensor prepared of the embodiment of the present invention for low concentration ammonia;
Fig. 4 is the round robin test result figure of the embodiment of the present invention to 5ppm ammonia;
Fig. 5 is the selectivity result figure of the embodiment of the present invention to other common organic vapors,
Note: NH
3for ammonia, concentration is 10.7ppm; DEA is diethylamine, and concentration is 200ppm; EtOH is ethanol, and Ethe is ether, and Acetone is acetone, and Methanol is methyl alcohol, and THF is tetrahydrofuran, and n-Hexane is normal hexane, and concentration is 5000ppm.
Embodiment
Further illustrate below in conjunction with drawings and Examples, method part of the present invention is made up of jointly electrostatic spinning and hydrothermal treatment consists two steps, and described electrostatic spinning spinning liquid is that spinning-aid agent and iron oxide presoma form jointly.Described electrostatic spinning technique can make semiconductor oxide iron presoma deposit on substrate surface with the form of nanofiber, hydrothermal technology can make semiconductor oxide iron presoma change under the effect of pressure and temperature, goes out semiconductor oxide iron nanostructured at substrate surface growth in situ.Two steps one in front and one in back, complement each other, indispensable.The semiconductor oxide iron nanostructured that growth in situ goes out and substrate contact well, present Ohmic contact character, are particularly useful for making gas sensor, especially flexible air dependent sensor.
embodiment 1
The method for making of method of the present invention, comprises the following steps:
1. prepare the mixed solution of ferric trichloride and polyvinyl butyral, i.e. spinning liquid, the concentration of described ferric trichloride is 50mg/mL, and polyvinyl butyral concentration is 30mg/mL; Wherein ferric trichloride can be that any one can be dissolved in spinning liquid solvent, and has the slaine of excellent compatibility with spinning-aid agent, includes but not limited to ferric trichloride, ferric nitrate; Polyvinyl butyral can be any one or multiple can the polymkeric substance of spinning, include but not limited to polyvinyl butyral, Kynoar, Polyvinylchloride, polyvinyl alcohol (PVA);
2. by step 1. in electrostatic spinning liquid be 0.3mL/h at flow velocity; Receiving range is 15cm; Spinning voltage is 8kV; Time of reception is deposit in ceramic bases with the form of nanofiber under the electrospinning conditions of 3min; Wherein ceramic bases can be flexible material or rigid material, includes but not limited to polyethylene terephthalate, teflon, polypropylene, Kynoar, glass, pottery, silicon chip, ito glass;
3. by step 2. in the substrate depositing nanofiber that obtains dry after at 135 DEG C hydrothermal treatment consists 8h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
1. ~ step 4. described in employing can film forming on a ceramic substrate, obtained in this way as the sensor of functional layer; Described sensor surface figure as shown in Figure 1, obtained semiconductor oxide iron nanostructured surface pattern as shown in Figure 2, semiconductor oxide iron nanostructured is evenly distributed, size is homogeneous, obtained sensor has excellent gas-sensitive property, to the response diagram of low concentration (1-10ppm) ammonia as shown in Figure 4, can find out the ammonia concentration information in described method energy Sensitive Detection environment, under 10ppm concentration, utilize formula S=(R
1-R
0)/R
0x100% can calculate sensitivity S=3000% (note: R
1for passing into the resistance value after ammonia, R
0for passing into the resistance value before ammonia).In addition, the response cycle figure of described method as shown in Figure 4, can find out that it has good stability and recovery.To shown in selectivity result Fig. 5 of other common organic vapors.
embodiment 2
1. prepare the mixed solution of ferric nitrate and polyvinyl butyral, i.e. spinning liquid, the concentration of described ferric nitrate is 10mg/mL, and polyvinyl butyral concentration is 100mg/mL;
2. step 1. in electrostatic spinning liquid be 0.1mL/h at flow velocity; Receiving range is 5cm; Spinning voltage is 5kV; Time of reception is deposit on PET substrate with the form of nanofiber under the electrospinning conditions of 30min;
3. by step 2. in the substrate depositing nanofiber that obtains dry after at 180 DEG C hydrothermal treatment consists 24h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
The resistance of the method obtained under low concentration (≤10ppm) condition is lower, less than 170 kilo-ohms, has good response to ammonia, and under 10ppm concentration, its sensitivity reaches 2900%.
embodiment 3
1. prepare the mixed solution of ferric nitrate and Polyvinylchloride, i.e. spinning liquid, the concentration of described ferric nitrate is 300mg/mL, and Polyvinylchloride concentration is 40mg/mL;
2. by step 1. in electrostatic spinning liquid be 1mL/h at flow velocity; Receiving range is 30cm; Spinning voltage is 30kV; Time of reception is deposit in teflon substrate with the form of nanofiber under the electrospinning conditions of 30min;
3. by step 2. in the substrate depositing nanofiber that obtains dry after at 120 DEG C hydrothermal treatment consists 6h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
The impedance of the method obtained under low concentration (≤10ppm) condition is lower, less than 200 kilo-ohms, has good response to ammonia, and under 10ppm concentration, its sensitivity reaches 2900%.
embodiment 4
1. prepare the mixed solution of ferric nitrate and Polyvinylchloride, i.e. spinning liquid, the concentration of described ferric nitrate is 300mg/mL, and Polyvinylchloride concentration is 40mg/mL;
2. by step 1. in electrostatic spinning liquid be 10mL/h at flow velocity; Receiving range is 30cm; Spinning voltage is 30kV; Time of reception is deposit in polypropylene substrate with the form of nanofiber under the electrospinning conditions of 0.5min;
3. by step 2. in the substrate depositing nanofiber that obtains dry after at 180 DEG C hydrothermal treatment consists 6h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
The impedance of the method obtained under low concentration (≤10ppm) condition is lower, less than 100 kilo-ohms, has good response to ammonia, and under 10ppm concentration, its sensitivity reaches 3100%.
embodiment 5
1. prepare the mixed solution of ferric trichloride and Polyvinylchloride, i.e. spinning liquid, the concentration of described ferric trichloride is 300mg/mL, and Polyvinylchloride concentration is 40mg/mL;
2. by step 1. in electrostatic spinning liquid be 1mL/h at flow velocity; Receiving range is 30cm; Spinning voltage is 30kV; Time of reception is deposit in Kynoar substrate with the form of nanofiber under the electrospinning conditions of 0.5min;
3. by step 2. in the substrate depositing nanofiber that obtains dry after at 120 DEG C hydrothermal treatment consists 24h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
The impedance of the method obtained under low concentration (≤10ppm) condition is lower, less than 150 kilo-ohms, has good response to ammonia, and under 10ppm concentration, its sensitivity reaches 3000%.
embodiment 6
1. prepare the mixed solution of ferric trichloride and vinylidene, i.e. spinning liquid, the concentration of described ferric trichloride is 85mg/mL, and poly-Kynoar concentration is 40mg/mL;
2. step 1. in electrostatic spinning liquid be 0.2mL/h at flow velocity; Receiving range is 15cm; Spinning voltage is 8kV; Time of reception is deposit in substrate of glass with the form of nanofiber under the electrospinning conditions of 3min;
3. step 2. in the substrate depositing nanofiber that obtains dry after at 135 DEG C hydrothermal treatment consists 8h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
The impedance of the method obtained under low concentration (≤10ppm) condition is lower, less than 200 kilo-ohms, has good response to ammonia, and under 10ppm concentration, its sensitivity reaches 3050%.
embodiment 7
1. prepare the mixed solution of ferric trichloride and polyvinyl butyral, i.e. spinning liquid, the concentration of described ferric trichloride is 85mg/mL, and polyvinyl butyral concentration is 40mg/mL;
2. step 1. in electrostatic spinning liquid be 0.2mL/h at flow velocity; Receiving range is 15cm; Spinning voltage is 8kV; Time of reception is deposit at the bottom of silicon wafer-based with the form of nanofiber under the electrospinning conditions of 3min;
3. by step 2. in the substrate depositing nanofiber that obtains dry after at 135 DEG C hydrothermal treatment consists 8h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
The impedance of the method obtained under low concentration (≤10ppm) condition is lower, less than 100 kilo-ohms, has good response to ammonia, and under 10ppm concentration, its sensitivity reaches 3100%.
embodiment 8
1. prepare the mixed solution of ferric nitrate and polyvinyl butyral, i.e. spinning liquid, the concentration of described ferric nitrate is 85mg/mL, and polyvinyl butyral concentration is 40mg/mL;
2. step 1. in electrostatic spinning liquid be 0.2mL/h at flow velocity; Receiving range is 15cm; Spinning voltage is 8kV; Time of reception is deposit in ito glass substrate with the form of nanofiber under the electrospinning conditions of 3min;
3. by step 2. in the substrate depositing nanofiber that obtains dry after at 135 DEG C hydrothermal treatment consists 8h, obtain the substrate that growth in situ has semiconductor oxide iron nanostructured, obtained method;
4. the length that step is 3. obtained there is substrate dip-coating one deck polyaniline of described semiconductor oxide iron nanostructured, obtained gas sensor.
The impedance of the method obtained under low concentration (≤10ppm) condition is lower, less than 10 kilo-ohms, has good response to ammonia, and under 10ppm concentration, its sensitivity reaches 3000%.
Above embodiment is only not used in for illustration of the present invention and limits the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Claims (7)
1. polyaniline/ferric oxide nano composite resistance type material sensors, it is characterized in that: comprise ceramic matrix, interdigital gold electrode and gas sensitive, described interdigital gold electrode is connected with lead-in wire, interdigital gold electrode is had at described ceramic matrix surface deposition, deposit gas sensitive at described ceramic matrix and interdigital gold electrode surfaces, described gas sensitive is made up of polyaniline/ferric oxide nano compound.
2. sensor according to claim 1, is characterized in that: the interdigital gold electrode of described ceramic matrix surface deposition is 5 ~ 16 right, and the interdigital width of interdigital gold electrode is 20 ~ 200 μm, and interdigital gap is 20 ~ 200 μm.
3. sensor according to claim 1, is characterized in that: the thickness of described gas sensitive is 50 ~ 600nm.
4. sensor according to claim 1, is characterized in that: described polyaniline/ferric oxide composite material is the water-soluble polyaniline of ferric oxide nano sheet and the polystyrolsulfon acid doping obtained by electrostatic spinning auxiliary water heat-treating methods and obtained.
5. a preparation method for sensor according to claim 1, is characterized in that: specifically comprise the steps:
1) mixed solution preparing semiconductor oxide iron presoma and spinning-aid agent obtains spinning liquid, after spinning liquid is formed nanofibres deposit to substrate surface by the method for electrostatic spinning, naturally dries;
2) described step 1) in the obtained substrate depositing nanofiber by hydrothermal treatment consists, obtain the semiconductor oxide iron with nanostructured of growth in situ in substrate;
3) at the polyaniline of obtained semiconductor oxide iron surface dip-coating one deck polystyrolsulfon acid doping, described sensor is obtained.
6. method according to claim 5, is characterized in that: the iron of semiconductor oxide described in step 1) precursor concentration is 10 ~ 300mg/mL, and described spinning-aid agent concentration is 40 ~ 100mg/mL, the flow velocity preferably 0.1 ~ 10mL/h of described electrostatic spinning; Receiving range is preferably 5 ~ 30cm; Spinning voltage is preferably 5 ~ 30kV; Time of reception is preferably 0.5 ~ 60min.
7. method according to claim 5, is characterized in that: step 2) described in hydrothermal treatment consists temperature be preferably 120 ~ 180 DEG C; Hydrothermal conditions is preferably 6 ~ 24h.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107607590A (en) * | 2017-08-30 | 2018-01-19 | 吉林大学 | One kind is based on the flower-shaped WO of PANI@3The flexible flat formula NH of nano sensitive material3Gas sensor and its application |
| CN108299641A (en) * | 2018-02-11 | 2018-07-20 | 黑龙江大学 | A kind of preparation method of polyaniline/ferric oxide composite material |
| CN109115839A (en) * | 2018-07-03 | 2019-01-01 | 华东师范大学 | A kind of interior growth of pipe is doped or fills mesoporous polyaniline gas sensor and preparation method |
| CN114917771A (en) * | 2022-04-28 | 2022-08-19 | 浙江大学 | Hollow fiber membrane flexible humidity sensor and efficient preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1384354A (en) * | 2002-05-24 | 2002-12-11 | 杨慕杰 | Compound polymer resistor type film humidity-sensitive element and its making process |
| CN102175724A (en) * | 2011-01-04 | 2011-09-07 | 西安工业大学 | Composite resistance NH3 gas-sensitive gas sensor and preparation method thereof |
| CN102662002A (en) * | 2012-04-25 | 2012-09-12 | 中国科学院微电子研究所 | Semi-conductor film, gas sensor and preparation method thereof |
| CN102866181A (en) * | 2012-09-30 | 2013-01-09 | 浙江大学 | Polyaniline/ titanium dioxide nanometer composite impedance type thin film gas sensor and preparation method thereof |
| CN104807859A (en) * | 2015-03-16 | 2015-07-29 | 浙江大学 | Low-temperature in-situ growing method of semiconducting metal oxide with nano-structure as well as application |
-
2015
- 2015-08-18 CN CN201510506166.5A patent/CN105136869B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1384354A (en) * | 2002-05-24 | 2002-12-11 | 杨慕杰 | Compound polymer resistor type film humidity-sensitive element and its making process |
| CN102175724A (en) * | 2011-01-04 | 2011-09-07 | 西安工业大学 | Composite resistance NH3 gas-sensitive gas sensor and preparation method thereof |
| CN102662002A (en) * | 2012-04-25 | 2012-09-12 | 中国科学院微电子研究所 | Semi-conductor film, gas sensor and preparation method thereof |
| CN102866181A (en) * | 2012-09-30 | 2013-01-09 | 浙江大学 | Polyaniline/ titanium dioxide nanometer composite impedance type thin film gas sensor and preparation method thereof |
| CN104807859A (en) * | 2015-03-16 | 2015-07-29 | 浙江大学 | Low-temperature in-situ growing method of semiconducting metal oxide with nano-structure as well as application |
Non-Patent Citations (2)
| Title |
|---|
| 应育邦 等: ""纳米结构聚苯胺及其复合气敏材料研究进展"", 《高分子材料科学与工程》 * |
| 李扬 等: ""聚吡咯复合纳米纤维气敏材料的响应特性"", 《气湿敏技术》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107607590A (en) * | 2017-08-30 | 2018-01-19 | 吉林大学 | One kind is based on the flower-shaped WO of PANI@3The flexible flat formula NH of nano sensitive material3Gas sensor and its application |
| CN107607590B (en) * | 2017-08-30 | 2019-11-08 | 吉林大学 | Based on the flower-shaped WO of PANI@3The flexible NH of sensitive material3Sensor and its application |
| CN108299641A (en) * | 2018-02-11 | 2018-07-20 | 黑龙江大学 | A kind of preparation method of polyaniline/ferric oxide composite material |
| CN108299641B (en) * | 2018-02-11 | 2020-11-03 | 黑龙江大学 | Preparation method of polyaniline/iron oxide composite material |
| CN109115839A (en) * | 2018-07-03 | 2019-01-01 | 华东师范大学 | A kind of interior growth of pipe is doped or fills mesoporous polyaniline gas sensor and preparation method |
| CN109115839B (en) * | 2018-07-03 | 2020-11-20 | 华东师范大学 | In-tube growth doped or filled mesoporous polyaniline gas sensor and preparation method thereof |
| CN114917771A (en) * | 2022-04-28 | 2022-08-19 | 浙江大学 | Hollow fiber membrane flexible humidity sensor and efficient preparation method thereof |
| CN114917771B (en) * | 2022-04-28 | 2023-09-29 | 浙江大学 | Hollow fiber membrane flexible humidity sensor and efficient preparation method thereof |
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| CN105136869B (en) | 2018-04-03 |
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