CN105132892A - Preparation method for wrinkled thin film used for being deposited on surfaces of various materials - Google Patents
Preparation method for wrinkled thin film used for being deposited on surfaces of various materials Download PDFInfo
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- CN105132892A CN105132892A CN201510589681.4A CN201510589681A CN105132892A CN 105132892 A CN105132892 A CN 105132892A CN 201510589681 A CN201510589681 A CN 201510589681A CN 105132892 A CN105132892 A CN 105132892A
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Abstract
The invention discloses a preparation method for a wrinkled thin film used for being deposited on the surfaces of various materials. The preparation method is characterized in that a substrate is selected and ultrasonically washed in deionized water and ethyl alcohol sequentially; then the substrate is dried at a low temperature in a dryer, and the thin polymer film is deposited on the dried substrate. Ordinary pressure plasma enhanced chemical vapor deposition is adopted; the deposition time is over 2 min; a power source of 1-100 kHz is adopted; the power is 5-30 w and one or more gases of Ar, He and O2 are selected as discharging gases of ordinary pressure reactivity plasma. The preparation method for the wrinkled thin film is simple in equipment; only simple one-step deposition is needed, and even and controllable wrinkles can be prepared on various substrates.
Description
Technical field
The present invention relates to a kind of moulding process of fold.
Background technology
Fold, because it has special formation mechenism and optical effect, is able to widespread use in surveying, optics.The late 20th century Winey, K.I and Balsara, the people such as N.P open the journey that diblock copolymer prepares unordered fold, Bowden subsequently, N etc. propose and flexible, changeable, adjustable prepare fold scheme, the i.e. hard metallic coating-prepare fold to whole system cooling by the intensification to elastic matrix-matrix surface deposition of thin, the micro-nano indentation of matrix surface, is proved to be the way of controllable fold orientation to the external force etc. of the different directions that matrix applies.
So far, fold is shaping still a large amount of shaping based on thick and soft matrix, when the second-order transition temperature of temperature higher than matrix, there is the thermal expansion of trace, now enclose the thin and hard metallic film of one deck to matrix, when matrix cools, the metallic film on surface shrinks formation fold.Conventional matrix is PDMS, and its second-order transition temperature is subzero 120 DEG C, and under normal temperature, quality is softer, and be in viscoelastic state, Young's modulus is only only 2MPa.For preparing the first-selected body material of fold.But PDMS is not suitable for solar cell, refuse the application that water surface etc. is multi-field.
Summary of the invention
The object of this invention is to provide a kind of fold method for manufacturing thin film, at multiple matrix surface fast deposition film, and fold can be formed.
In order to achieve the above object, technical scheme of the present invention there is provided a kind of fold method for manufacturing thin film for depositing to various material surface, it is characterized in that, choose substrate also successively by substrate ultrasonic cleaning in deionized water, alcohol, then by substrate oven drying at low temperature in an oven, deposition on substrate polymeric film after the drying subsequently.Wherein, deposition adopts atmospheric plasma to strengthen chemical vapour deposition, and depositing time is more than 2min, and adopt 1-100kHz power supply, power is 5-30w, and the discharge gas of synthesis under normal pressure plasma body is Ar, He, O
2in one or several.
Preferably, described synthesis under normal pressure plasma body adopts the dielectric barrier discharges such as pottery, quartz plate, produces under the environment of normal temperature and pressure.
Preferably, described substrate is PET, SiO
2, one in Si, PI, PDMS.
Preferably, the Young's modulus of PET substrate is 12Gpa; SiO
2the Young's modulus of substrate is 71.7Gpa; The Young's modulus of Si substrate is 140.3GPa; The Young's modulus of PI substrate is 50Gpa; The Young's modulus of PDMS substrate is 2Mpa.
Preferably, the flow of electric discharge assist gas Ar is 200sccm-1000sccm; The flow of electric discharge assist gas He is 200sccm-1000sccm; Exoelectrical reaction gas O
2flow be 10-50sccm.
Preferably, the presoma of described deposition adopts hexamethyldisiloxane (HMDSO).
Preferably, described HMDSO is passed into by Bubbling method, without extra heating in water bath or cooling bubbler.
Preferably, when described HMDSO bubbling is loaded into, Ar or He is selected to be loaded into.
Preferably, the flow of the described Ar as carrier gas or the described He as carrier gas is 10-100sccm.
The present invention is by PECVD, and the fold film prepared is SixOyHz, and thickness is more than 2 μm, and characteristic wavelength is more than 500mn, area be 40*40mm and more than, and to be evenly distributed.
Equipment of the present invention is simple, only needs a simple step deposition, can prepare the fold of uniform, controllable on various substrate.
Accompanying drawing explanation
One of discharging chamber schematic diagram that Fig. 1 adopts for atmospheric plasma enhancing chemical vapour deposition;
Fig. 2 is the fold figure that in the present invention, embodiment 1 obtains;
Fig. 3 is the fold figure that in the present invention, embodiment 2 obtains;
Fig. 4 is the fold figure that in the present invention, embodiment 3 obtains;
Fig. 5 is the fold figure that in the present invention, embodiment 4 obtains;
Fig. 6 is the fold figure that in the present invention, embodiment 5 obtains.
Embodiment
For making the present invention become apparent, be hereby described in detail below with preferred embodiment.
Embodiment 1:
The invention provides a kind of fold method for manufacturing thin film for depositing to various material surface, step is:
Choose the PET substrate that Young's modulus is 12Gpa, by substrate successively ultrasonic cleaning in deionized water, alcohol, then by substrate oven drying at low temperature in an oven, finally at deposition on substrate polymeric film.Wherein, deposition adopts atmospheric plasma to strengthen chemical vapour deposition, and depositing time is 4min, and adopt 20kHz power supply, power is 6w, and the discharge gas of synthesis under normal pressure plasma body is pure Ar, and flow is 1000sccm.The presoma of deposition adopts HMDSO, HMDSO room temperature preservation, and without extra heating in water bath or cooling, presoma HDMSO is loaded into by Bubbling method Ar, and the flow of carrier gas Ar is 20sccm.
The fold obtained as shown in Figure 2.
Embodiment 2:
The difference of the present embodiment and embodiment 1 is: select Young's modulus to be the SiO of 71.7Gpa
2substrate.
The fold obtained as shown in Figure 3.
Embodiment 3:
The difference of the present embodiment and embodiment 1 is: select Young's modulus to be the Si substrate of 140.3GPa.
The fold obtained as shown in Figure 4.
Embodiment 4:
The difference of the present embodiment and embodiment 1 is: select Young's modulus to be the PI substrate of 50Gpa.
The fold obtained as shown in Figure 5.
Embodiment 5:
The difference of the present embodiment and embodiment 1 is: select Young's modulus to be the PDMS substrate of 2Mpa.
The fold obtained as shown in Figure 6.
Claims (9)
1. one kind for depositing to the fold method for manufacturing thin film of various material surface, it is characterized in that, choose substrate, and successively by substrate ultrasonic cleaning in deionized water, alcohol, then by substrate oven drying at low temperature in an oven, deposition on substrate polymeric film after the drying subsequently, wherein, deposition adopts atmospheric plasma to strengthen chemical vapour deposition, depositing time is more than 2min, adopt 1-100kHz power supply, power is 5-30w, and the discharge gas of synthesis under normal pressure plasma body is Ar, He, O
2in one or several.
2. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 1, is characterized in that, described synthesis under normal pressure plasma body adopts pottery, quartz plate dielectric barrier discharge, produces under the environment of normal temperature and pressure
3. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 1, it is characterized in that, described substrate is PET, SiO
2, one in Si, PI, PDMS.
4. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 3, it is characterized in that, the Young's modulus of PET substrate is 12Gpa; SiO
2the Young's modulus of substrate is 71.7Gpa; The Young's modulus of Si substrate is 140.3GPa; The Young's modulus of PI substrate is 50Gpa; The Young's modulus of PDMS substrate is 2Mpa.
5. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 1, is characterized in that, the flow of electric discharge assist gas Ar is 200sccm-1000sccm; The flow of electric discharge assist gas He is 200sccm-1000sccm; Exoelectrical reaction gas O
2flow be 10-50sccm.
6. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 1, is characterized in that, the presoma of described deposition adopts hexamethyldisiloxane.
7. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 6, it is characterized in that, described hexamethyldisiloxane is passed into by Bubbling method, without extra heating in water bath or cooling.
8. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 7, is characterized in that, when described hexamethyldisiloxane bubbling is loaded into, selects Ar or He to be loaded into.
9. a kind of fold method for manufacturing thin film for depositing to various material surface as claimed in claim 8, it is characterized in that, during bubbling, the flow of the described Ar as carrier gas or the described He as carrier gas is 10-100sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510589681.4A CN105132892A (en) | 2015-09-16 | 2015-09-16 | Preparation method for wrinkled thin film used for being deposited on surfaces of various materials |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510589681.4A CN105132892A (en) | 2015-09-16 | 2015-09-16 | Preparation method for wrinkled thin film used for being deposited on surfaces of various materials |
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| CN105132892A true CN105132892A (en) | 2015-12-09 |
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| CN201510589681.4A Pending CN105132892A (en) | 2015-09-16 | 2015-09-16 | Preparation method for wrinkled thin film used for being deposited on surfaces of various materials |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109855775A (en) * | 2019-01-25 | 2019-06-07 | 上海电力学院 | A kind of preparation method of microstress sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122015A (en) * | 2007-09-11 | 2008-02-13 | 东华大学 | Method for preparing nano silicon-base porous luminescent material by normal pressure plasma gas phase deposition |
-
2015
- 2015-09-16 CN CN201510589681.4A patent/CN105132892A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122015A (en) * | 2007-09-11 | 2008-02-13 | 东华大学 | Method for preparing nano silicon-base porous luminescent material by normal pressure plasma gas phase deposition |
Non-Patent Citations (3)
| Title |
|---|
| 汤文杰等: "单体对大气下沉积SiOx薄膜的性能研究", 《包装工程》 * |
| 赵小力: "基于PDMS的自组装及转移印刷制备微结构的研究", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》 * |
| 韩尔立等: "大气压聚合SiOx薄膜用于新型印刷板材的研究", 《包装工程》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109855775A (en) * | 2019-01-25 | 2019-06-07 | 上海电力学院 | A kind of preparation method of microstress sensor |
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Application publication date: 20151209 |
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