CN105098077B - A kind of OTFT and preparation method thereof, array base palte, display device - Google Patents
A kind of OTFT and preparation method thereof, array base palte, display device Download PDFInfo
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- CN105098077B CN105098077B CN201510552977.9A CN201510552977A CN105098077B CN 105098077 B CN105098077 B CN 105098077B CN 201510552977 A CN201510552977 A CN 201510552977A CN 105098077 B CN105098077 B CN 105098077B
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- 239000000758 substrate Substances 0.000 claims abstract description 65
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
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- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of OTFT and preparation method thereof, array base palte, display device, the service life to improve OTFT.The preparation method of the OTFT, including make grid, make organic semiconductor layer and make source electrode and drain electrode, wherein, before organic semiconductor layer is made, this method also includes：An organic insulator is made on underlay substrate；Surface preparation is carried out to organic insulator so that the polarity polarization of the organic insulation layer surface.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of OTFT and preparation method thereof, array base
Plate, display device.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-
LCD) there is large area, high integration, cost is low, technique is the main flow of current display field the features such as good environmental protection flexibly
Display device.TFT-LCD display panels include the array base palte and color membrane substrates (Colour Filter, CF) being oppositely arranged, battle array
Row substrate includes the thin film transistor (TFT) that some arrays are arranged, and the material of the active layer of current thin film transistor mainly has non-crystalline silicon
(α-Si), polysilicon (p-Si), oxide semiconductor and organic semiconductor etc..
Because organic semiconductor processing temperature is low, energy consumption is low, and suitable for flexible base board, technical process is simple, film forming skill
Art is numerous, and material source extensively, causes extensive concern the features such as environment-friendly, is expected to turn into the core of FPD of new generation
Heart technology.
But the active layer of thin film transistor (TFT) is when using organic semiconductor, external environment, such as water, oxygen and light and temperature
Deng can all cause great influence to the stability of organic thin film transistor device, cause the decay of device performance, and then reduce
The service life of device, significantly limit the development and application of OTFT.
When in use, the water in external environment is to the organic semiconductor layer in OTFT for OTFT
It can affect, be the main cause for now resulting in the reduction of OTFT service life.Organic semiconductor layer
The reason for water sensitive is that some electron rich atoms are included in molecule organic semiconductor, such as oxygen atom, nitrogen-atoms, and these are rich
The inclined negativity of polarity of electron group, easily forms stable hydrogen bond, as shown in figure 1, the water capacity is easy with water (H2O) molecule in air
React, and then make organic with the metal routing in the other groups and OTFT in organic semiconductor layer
The service life of thin film transistor (TFT) is greatly attenuated, and X represents the electron rich group in molecule organic semiconductor in figure, and R represents organic
Remaining group in semiconductor molecule.
In summary, the service life of the OTFT of prior art is relatively low.
The content of the invention
The embodiments of the invention provide a kind of OTFT and preparation method thereof, array base palte, display device, use
To improve the service life of OTFT.
A kind of preparation method of OTFT provided in an embodiment of the present invention, including make grid, make organic
Semiconductor layer and making source electrode and drain electrode, wherein, before organic semiconductor layer is made, this method also includes：
An organic insulator is made on underlay substrate；
Surface preparation is carried out to the organic insulator so that the polarity polarization of the organic insulation layer surface.
By the preparation method of OTFT provided in an embodiment of the present invention, because this method organic is partly led making
Also include before body layer：An organic insulator is made on underlay substrate；Surface preparation is carried out to organic insulator so that should
The polarity polarization of organic insulation layer surface.So cause in the molecule organic semiconductor in the organic semiconductor layer that subsequently makes
The inclined negativity of polarity electron rich group under intermolecular active force to organic insulator apparent motion so that these electron riches
Group is aligned in the bottom of organic semiconductor layer, so that the water vapour in air is difficult to and having in the embodiment of the present invention
Machine semiconductor layer is combined, and compared with prior art, the embodiment of the present invention can effectively improve the use of OTFT
Life-span.
It is preferred that it is described to organic insulator progress surface preparation, including：
Surface hydriding processing is carried out to the organic insulator.
It is preferred that the organic insulator is polyimide dielectric film, or it is acrylic class dielectric film.
It is preferred that methods described includes：
Grid and gate line are made on underlay substrate by patterning processes；
An organic insulator is made on the underlay substrate for completing above-mentioned steps；
Surface hydriding processing is carried out to the organic insulator；
On the underlay substrate for completing above-mentioned steps organic semiconductor layer is made by patterning processes；
On the underlay substrate for completing above-mentioned steps source electrode and drain electrode are made by patterning processes.
It is preferred that methods described includes：
On underlay substrate light shield layer is made by patterning processes；
An organic insulator is made on the underlay substrate for completing above-mentioned steps；
Surface hydriding processing is carried out to the organic insulator；
On the underlay substrate for completing above-mentioned steps organic semiconductor layer is made by patterning processes；
The first insulating barrier is made on the underlay substrate for completing above-mentioned steps；
On the underlay substrate for completing above-mentioned steps grid and gate line are made by patterning processes；
The second insulating barrier is made on the underlay substrate for completing above-mentioned steps；
On the underlay substrate for completing above-mentioned steps source electrode and drain electrode are made by patterning processes.
It is preferred that described make organic semiconductor layer, bag on the underlay substrate for completing above-mentioned steps by patterning processes
Include：
One electric field is applied to the underlay substrate for completing above-mentioned steps, one layer of organic semiconductor is deposited in the presence of the electric field
Film, deposition closes the electric field after terminating；
Photoresist is coated on the organic semiconductor thin-film, the photoresist is exposed, developed, only retaining needs
The photoresist formed at organic semiconductor layer position；
Organic semiconductor thin-film at position is not covered by photoresist by etching to remove, and removes remaining photoresist,
Form organic semiconductor layer.
It is preferred that the underlay substrate of described pair of completion above-mentioned steps applies an electric field, including：
First electrode is set in the top for completing the underlay substrate of above-mentioned steps, the underlay substrate of above-mentioned steps is completed
Lower section sets second electrode, the respectively described first electrode voltage different with second electrode application.
The embodiment of the present invention additionally provides a kind of OTFT, and the OTFT is to pass through the above method
Make obtained OTFT.
The embodiment of the present invention additionally provides a kind of array base palte, and the array base palte includes above-mentioned organic thin-film transistor
Pipe.
The embodiment of the present invention additionally provides a kind of display device, and the display device includes above-mentioned array base palte.
Brief description of the drawings
Fig. 1 is that the electron rich group in prior art molecule organic semiconductor forms showing for hydrogen bond with the hydrone in environment
It is intended to；
Fig. 2 is a kind of preparation method flow chart of OTFT provided in an embodiment of the present invention；
Fig. 3 is the preparation method flow chart for the OTFT that the embodiment of the present invention one is provided；
Fig. 4-Fig. 5 is respectively different phase of the OTFT of the offer of the embodiment of the present invention one in manufacturing process
Cross section structure schematic diagram；
Fig. 6 is the method flow diagram for the making organic semiconductor layer that the embodiment of the present invention one is provided；
Fig. 7 is the preparation method flow chart for the OTFT that the embodiment of the present invention two is provided；
Fig. 8 is the cross section structure schematic diagram for the OTFT that the embodiment of the present invention two is provided；
Fig. 9 is a kind of cross section structure schematic diagram of array base palte provided in an embodiment of the present invention.
Description of reference numerals：
40th, underlay substrate；41st, grid；42nd, organic insulator；421st, the organic insulator not being hydrogenated；422nd, hydrogenate
Organic insulator；51st, organic semiconductor layer；52nd, source electrode；53rd, drain；81st, light shield layer；82nd, the first insulating barrier；83rd, second is exhausted
Edge layer；90th, passivation layer；91st, pixel electrode.
Embodiment
The embodiments of the invention provide a kind of OTFT and preparation method thereof, array base palte, display device, use
To improve the service life of OTFT.
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing the present invention is made into
One step it is described in detail, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole implementation
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
All other embodiment, belongs to the scope of protection of the invention.
OTFT of specific embodiment of the invention offer and preparation method thereof is provided below in conjunction with the accompanying drawings.
Each thicknesses of layers and area size, shape do not react the actual proportions of each film layer in accompanying drawing, and purpose is that signal is said
Bright present invention.
As shown in Fig. 2 the specific embodiment of the invention provides a kind of preparation method of OTFT, including make
Grid, making organic semiconductor layer and making source electrode and drain electrode, wherein, before organic semiconductor layer is made, this method is also
Including：
S201, an organic insulator is made on underlay substrate；
S202, to the organic insulator carry out surface preparation so that the polarity polarization of the organic insulation layer surface.
The method that the specific embodiment of the invention makes organic insulator on underlay substrate is same as the prior art, here not
Repeat again.Preferably, the organic insulator of the specific embodiment of the invention is polyimide dielectric film, or is the insulation of acrylic class
Film, certainly, in actual production process, organic insulator can also be other types of organic insulating film, and the present invention is specific real
Apply example and specific limit is not made to the material of organic insulator.
Preferably, the specific embodiment of the invention carries out surface preparation to organic insulator, including：Organic insulator is entered
The processing of row surface hydriding, the hydrotreated detailed process of the specific embodiment of the invention is with prior art to common organic compound
The method hydrogenated is similar, and such as high-pressure hydrogenation, catalyst are hydrogenated, and are repeated no more here.Certainly, in specific production process
In, present invention specific implementation can also be by other surface treatment methods to the organic insulator in the specific embodiment of the invention
It is surface-treated so that the polarity polarization of the organic insulation layer surface.
The specific embodiment of the invention to organic insulator after surface hydriding processing is carried out, in having after hydrogenation treatment
Organic semiconductor layer is made on machine insulating barrier, due to including some electron rich atoms, these electron riches in molecule organic semiconductor
The inclined negativity of polarity of group, and substantial amounts of hydrogen atom is contained on the surface for passing through hydrotreated organic insulator, polarity polarization,
Therefore, it is possible to cause the electron rich group of the inclined negativity of the polarity in molecule organic semiconductor to align in molecule organic semiconductor
Bottom, these electron rich groups can form stable hydrogen bond with the hydrogen atom of organic insulation layer surface, so that in air
Water vapour be difficult to be combined with the organic semiconductor layer in the specific embodiment of the invention, compared with prior art, the present invention is specific
Embodiment can effectively improve the service life of OTFT.
The specific embodiment of the invention makes the organic thin-film transistor that obtained OTFT both can be bottom gate type
Pipe, or the OTFT of top gate type, certainly, in actual production process, can also have to be other types of
Machine thin film transistor (TFT), such as can also be the OTFT of side grid-type.
Embodiment one：
As shown in figure 3, the preparation method for the OTFT that the specific embodiment of the invention is provided is specifically included：
S301, by patterning processes grid and gate line are made on underlay substrate；
S302, complete above-mentioned steps underlay substrate on make an organic insulator；
S303, to the organic insulator carry out surface hydriding processing；
S304, on the underlay substrate for completing above-mentioned steps by patterning processes make organic semiconductor layer；
S305, pass through patterning processes on the underlay substrate for completing above-mentioned steps and make source electrode and drain electrode.
Specifically, as shown in figure 4, being deposited first on underlay substrate 40 in layer of metal layer, the specific embodiment of the invention
Underlay substrate 40 can be glass substrate, or plastic base, can be splashed during deposited metal layer using hot evaporation, magnetic control
The method such as penetrate, the metal level of deposition for molybdenum (Mo) or aluminium (Al) individual layer film layer, or the composite film of Mo and Al compositions,
Certainly can also be other metal single layer films or composite membrane, the specific embodiment of the invention does not make specific to the material of metal level
Limit.Patterning processes formation grid 41 and gate line (not shown) are used to the metal level of deposition afterwards, the present invention is specific
Patterning processes in embodiment include coating, exposure, development, etching and the part or all of mistake for removing photoresist of photoresist
Journey, the specific embodiment of the invention makes grid and the detailed process of gate line is same as the prior art, repeats no more here.
Then, an organic insulator 42, organic insulator are made on the underlay substrate that making has grid 41 and gate line
Making can be using the method, detailed process and the prior art phase of specific embodiment of the invention maker insulating barrier such as spin coating
Together, repeat no more here.
Afterwards, surface hydriding processing is carried out to the organic insulator of making, one layer of hydrogen is formed on the surface of organic insulator
The organic insulator 422 of change, the organic insulator 42 of specific embodiment of the invention formation includes the He of organic insulator 422 of hydrogenation
The organic insulator 421 not being hydrogenated positioned at the lower section of organic insulator 422 of the hydrogenation, the organic insulator 422 of hydrogenation
Polarity polarization.The specific embodiment of the invention carries out the specific processing method and existing skill of surface hydriding processing to organic insulator
Art is identical, repeats no more here.
Then, as shown in figure 5, making organic semiconductor layer 51 by patterning processes on the organic insulator 422 of hydrogenation,
Patterning processes in the specific embodiment of the invention include coating, exposure, development, etching and the portion for removing photoresist of photoresist
Divide or all processes, the specific method that the specific embodiment of the invention makes organic semiconductor layer is same as the prior art, here not
Repeat again.
Then, as shown in figure 5, making source electrode 52 and drain electrode 53, this hair by patterning processes on organic semiconductor layer 51
The material that making source electrode 52 and the material of drain electrode 53 can be with making grids 41 in the specific embodiment of the invention in bright specific embodiment
Material is identical, and the specific embodiment of the invention makes source electrode 52 and the specific method of drain electrode 53 is same as the prior art, no longer goes to live in the household of one's in-laws on getting married here
State.
The specific embodiment of the invention makes in the molecule organic semiconductor in obtained organic semiconductor layer 51 and included
Electron rich atom, by the inclined negativity of polarity of the former molecular electron rich group of these electron riches, in the hydrogenation of polarity polarization
In the presence of organic insulator 422, these electron rich groups can be aligned in the bottom of molecule organic semiconductor, due to molecule
Between active force it is smaller, therefore these electron rich groups time used when aligning is longer, in actual production process, is
Reduce these electron rich groups and align the time used, one can be applied during organic semiconductor layer 51 is made
The individual external force for contributing to these electron rich groups to align, such as applies an electric field force so that these electron rich groups are applying
External force in the presence of quickly align, can preferably ensure organic semiconductor layer in the specific embodiment of the invention not
Combined with the water vapour in air, so as to more effectively improve the service life of OTFT.
Specifically, as shown in fig. 6, the specific embodiment of the invention is specifically included when making organic semiconductor layer 51：
S601, underlay substrate one electric field of application to completing above-mentioned steps, one layer of deposition is organic in the presence of the electric field
Semiconductive thin film, deposition closes the electric field after terminating；
S602, on the organic semiconductor thin-film photoresist is coated, the photoresist is exposed, developed, is only protected
Staying needs the photoresist to be formed at organic semiconductor layer position；
S603, by etching to remove organic semiconductor thin-film at position is not covered by photoresist, and remove remaining light
Photoresist, forms organic semiconductor layer.
Preferably, the specific embodiment of the invention applies an electric field to the underlay substrate for completing above-mentioned steps, including：Complete
The top of the underlay substrate of above-mentioned steps sets first electrode, and the second electricity is set in the lower section for completing the underlay substrate of above-mentioned steps
Pole, respectively the first electrode voltage different with second electrode application, the specific embodiment of the invention can pass through the electricity of regulation first
Voltage swing between pole and second electrode forms the electric field of varying strength between the first electrode and the second electrode.At this moment, exist
An electric field is formed between first electrode and second electrode, in Deposit organic semiconductor film in the presence of the electric field, You Jiban
Electron rich group in molecule organic semiconductor in conductor thin film is in the presence of electric field force quickly to organic insulator side
To movement, and align in the bottom of organic semiconductor thin-film.
Embodiment two：
As shown in fig. 7, the preparation method for the OTFT that the specific embodiment of the invention is provided is specifically included：
S701, on underlay substrate by patterning processes make light shield layer；
S702, complete above-mentioned steps underlay substrate on make an organic insulator；
S703, to the organic insulator carry out surface hydriding processing；
S704, on the underlay substrate for completing above-mentioned steps by patterning processes make organic semiconductor layer；
S705, complete above-mentioned steps underlay substrate on make the first insulating barrier；
S706, pass through patterning processes on the underlay substrate for completing above-mentioned steps and make grid and gate line；
S707, complete above-mentioned steps underlay substrate on make the second insulating barrier；
S708, pass through patterning processes on the underlay substrate for completing above-mentioned steps and make source electrode and drain electrode.
Specifically, as shown in figure 8, making light shield layer 81, present invention tool by patterning processes first on underlay substrate 40
Patterning processes in body embodiment include the part or all of of coating, exposure, development, etching and the removal photoresist of photoresist
Process, the detailed process that the specific embodiment of the invention makes light shield layer is same as the prior art, repeats no more here.
Then, an organic insulator 42 is made on the underlay substrate that making has light shield layer 81, and to the organic exhausted of making
Edge layer 42 carries out surface hydriding processing.The specific embodiment of the invention two makes organic insulator 42, and to organic insulator 42
The method for carrying out surface hydriding processing is identical with the specific embodiment of the invention one, repeats no more here.
Then, organic semiconductor layer 51, the specific embodiment of the invention are made by patterning processes on organic insulator 42
The method of two making organic semiconductor layers 51 is identical with the specific embodiment of the invention one, repeats no more here.Similarly, with this hair
Bright specific embodiment one is similar, and the specific embodiment of the invention two can have in making first when making organic semiconductor layer 51
Apply an electric field on the underlay substrate of organic insulator 42, Deposit organic semiconductor film, Jin Ertong in the presence of the electric field
Later continuous patterning processes make the organic semiconductor layer 51 of the specific embodiment of the invention.
Then, the first insulating barrier 82 is made on organic semiconductor layer 51, the material of the first insulating barrier 82 is silica
(SiO2) or silicon nitride (SiN), or be SiO2 and SiN composite, certainly, during actual fabrication, the present invention is specific
First insulating barrier 82 of embodiment can also be other inorganic material, or organic material, when the first insulating barrier 82 is to have
During machine material, can use with the identical material of organic insulator 42, the specific embodiment of the invention is not to the first insulating barrier 82
Material make specific limit.The specific method that the specific embodiment of the invention makes the first insulating barrier 82 is same as the prior art, this
In repeat no more.
Then, grid 41 and gate line, the specific embodiment of the invention are made by patterning processes on the first insulating barrier 82
The method of two making grids 41 and gate line is identical with the specific embodiment of the invention one, repeats no more here.
Then, the second insulating barrier 83 is made on grid 41 and gate line, when it is implemented, the specific embodiment of the invention
The material of second insulating barrier 83 is identical with the material of the first insulating barrier 82, the material of the embodiment of the present invention not to the second insulating barrier 83
Material makees specific limit.The specific embodiment of the invention makes tool of the specific method of the second insulating barrier 83 with making the first insulating barrier 82
Body method is identical, repeats no more here.
Then, source electrode 52 and drain electrode 53, the specific embodiment of the invention are made by patterning processes on the second insulating barrier 83
The specific method for making source electrode 52 and drain electrode 53 is identical with the specific embodiment of the invention one, repeats no more here.
The specific embodiment of the invention additionally provides a kind of OTFT, and the OTFT is by this hair
The above method that bright specific embodiment is provided makes and obtained.Due to half in the OTFT of the specific embodiment of the invention
Conductor layer, and insulating barrier below the semiconductor layer use organic material, therefore the specific embodiment of the invention have
Machine thin film transistor (TFT) has preferable application prospect in terms of Flexible Displays.
The specific embodiment of the invention additionally provides a kind of array base palte, and the array base palte is carried including the specific embodiment of the invention
The above-mentioned OTFT supplied.Specifically, as shown in figure 9, the OTFT of the specific embodiment of the invention is with reality
Apply exemplified by example one, the array base palte that the specific embodiment of the invention is provided also includes the passivation layer being located on source electrode 52 and drain electrode 53
90, and the pixel electrode 91 being connected with drain electrode 53.
The specific embodiment of the invention additionally provides a kind of display device, and the display device is carried including the specific embodiment of the invention
The above-mentioned array base palte supplied, the display device can be liquid crystal panel, liquid crystal display, LCD TV, Organic Light Emitting Diode
The display dress such as (Organic Light Emitting Diode, OLED) panel, OLED display, OLED TVs or Electronic Paper
Put.
In summary, the specific embodiment of the invention provide a kind of OTFT and preparation method thereof, array base palte,
Display device, the preparation method of OTFT include making the method for grid, the method for making organic semiconductor layer, with
And the method for making source electrode and drain electrode, wherein, before organic semiconductor layer is made, this method also includes：On underlay substrate
Make an organic insulator；Surface preparation is carried out to the organic insulator so that the polarity of the organic insulation layer surface is inclined
Positivity.Because the specific embodiment of the invention is before organic semiconductor layer is made, an organic insulator is made on underlay substrate,
And surface preparation is carried out to the organic insulator that making is obtained so that the polarity polarization of the organic insulation layer surface so that
The electron rich group of the inclined negativity of the polarity in molecule organic semiconductor in the organic semiconductor layer subsequently made is intermolecular
To organic insulator apparent motion under active force so that these electron rich groups are aligned in the bottom of organic semiconductor layer,
So that the water vapour in air is difficult to be combined with the organic semiconductor layer in the specific embodiment of the invention, with prior art phase
Than the specific embodiment of the invention can effectively improve the service life of OTFT.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (10)
1. a kind of preparation method of OTFT, including make grid, make organic semiconductor layer and make source electrode
And drain electrode, it is characterised in that before organic semiconductor layer is made, this method also includes：
An organic insulator is made on underlay substrate；
Surface preparation is carried out to the organic insulator so that the polarity polarization of the organic insulation layer surface.
2. according to the method described in claim 1, it is characterised in that described that surface preparation is carried out to the organic insulator,
Including：
Surface hydriding processing is carried out to the organic insulator.
3. method according to claim 2, it is characterised in that the organic insulator is polyimide dielectric film, or
For acrylic class dielectric film.
4. method according to claim 3, it is characterised in that methods described includes：
Grid and gate line are made on underlay substrate by patterning processes；
An organic insulator is made on the underlay substrate for completing above-mentioned steps；
Surface hydriding processing is carried out to the organic insulator；
On the underlay substrate for completing above-mentioned steps organic semiconductor layer is made by patterning processes；
On the underlay substrate for completing above-mentioned steps source electrode and drain electrode are made by patterning processes.
5. method according to claim 3, it is characterised in that methods described includes：
On underlay substrate light shield layer is made by patterning processes；
An organic insulator is made on the underlay substrate for completing above-mentioned steps；
Surface hydriding processing is carried out to the organic insulator；
On the underlay substrate for completing above-mentioned steps organic semiconductor layer is made by patterning processes；
The first insulating barrier is made on the underlay substrate for completing above-mentioned steps；
On the underlay substrate for completing above-mentioned steps grid and gate line are made by patterning processes；
The second insulating barrier is made on the underlay substrate for completing above-mentioned steps；
On the underlay substrate for completing above-mentioned steps source electrode and drain electrode are made by patterning processes.
6. the method according to claim 4 or 5, it is characterised in that described to lead on the underlay substrate for completing above-mentioned steps
Cross patterning processes and make organic semiconductor layer, including：
One electric field is applied to the underlay substrate for completing above-mentioned steps, one layer of organic semiconductor is deposited in the presence of the electric field thin
Film, deposition closes the electric field after terminating；
Photoresist is coated on the organic semiconductor thin-film, the photoresist is exposed, developed, only retaining needs to be formed
Photoresist at organic semiconductor layer position；
The organic semiconductor thin-film not being covered by photoresist at position is removed by etching, and removes remaining photoresist, is formed
Organic semiconductor layer.
7. method according to claim 6, it is characterised in that the underlay substrate of described pair of completion above-mentioned steps applies an electricity
, including：
First electrode is set in the top for completing the underlay substrate of above-mentioned steps, in the lower section for the underlay substrate for completing above-mentioned steps
Second electrode, the respectively described first electrode voltage different with second electrode application are set.
8. a kind of OTFT, it is characterised in that the thin film transistor (TFT) is by described in claim any one of 1-7
Method make obtained OTFT.
9. a kind of array base palte, it is characterised in that the array base palte includes the OTFT described in claim 8.
10. a kind of display device, it is characterised in that the display device includes the array base palte described in claim 9.
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|---|---|---|---|---|
| CN103413832A (en) * | 2013-07-08 | 2013-11-27 | 复旦大学 | Metal oxide thin film transistor and preparation method thereof |
| CN104485420A (en) * | 2014-12-24 | 2015-04-01 | 京东方科技集团股份有限公司 | Organic thin film transistor and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413832A (en) * | 2013-07-08 | 2013-11-27 | 复旦大学 | Metal oxide thin film transistor and preparation method thereof |
| CN104485420A (en) * | 2014-12-24 | 2015-04-01 | 京东方科技集团股份有限公司 | Organic thin film transistor and preparation method thereof |
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