CN105098071B - The method for manufacturing phase-change memory - Google Patents
The method for manufacturing phase-change memory Download PDFInfo
- Publication number
- CN105098071B CN105098071B CN201510402332.7A CN201510402332A CN105098071B CN 105098071 B CN105098071 B CN 105098071B CN 201510402332 A CN201510402332 A CN 201510402332A CN 105098071 B CN105098071 B CN 105098071B
- Authority
- CN
- China
- Prior art keywords
- phase
- opening
- dielectric layer
- layer
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 52
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 230000008859 change Effects 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 22
- 239000012782 phase change material Substances 0.000 claims description 20
- 239000007772 electrode material Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 230000009466 transformation Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 116
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910018110 Se—Te Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008772 Sn—Se Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- A kind of 1. method for manufacturing phase-change memory, it is characterised in that include:A heating element heater is formed on semiconductor base material;One first dielectric layer is formed above the semiconductor substrate and the heating element heater, wherein first dielectric layer has one first Opening exposes the heating element heater;A conductive barrier layer is formed on first dielectric layer, and serves as a contrast and wraps up in first opening, the Top of the Qie Fu Cover heating element heaters Surface;A phase-change material layer is formed on the conductive barrier layer, and fills first opening;The phase-change material layer of a part and the conductive barrier layer of a part are removed, to expose first dielectric layer, And the phase change element formed in first opening;One second dielectric layer is formed on first dielectric layer, wherein there is second dielectric layer one second opening to expose the phase transformation Change element;An electrode material layer is formed on second dielectric layer, and fills second opening;AndThe part of the electrode material layer positioned at second dielectric layer is removed, and forms the electrode for being embedded at the second opening Structure.
- 2. the method for manufacture phase-change memory according to claim 1, it is characterised in that the semiconductor substrate includes one Bottom electrode and a dielectric layer are located on the bottom electrode, and there is the dielectric layer through hole to expose the bottom electrode, and the heating unit Part is formed in the through hole.
- 3. the method for manufacture phase-change memory according to claim 2 a, it is characterised in that resistance of the heating element heater Value is more than a resistance value of the bottom electrode, and a width of the heating element heater is less than a width of the bottom electrode.
- 4. the method for manufacture phase-change memory according to claim 2 a, it is characterised in that width of first opening For 0.8 times to 1.5 times of a width of the bottom electrode.
- 5. the method for manufacture phase-change memory according to claim 1 a, it is characterised in that width of first opening More than a width of the heating element heater.
- 6. the method for manufacture phase-change memory according to claim 1, it is characterised in that the barrier layer includes at least one Material is the group formed selected from titanium nitride, tantalum nitride, titanium and combinations of the above, and the electrode structure includes an at least material Material is the group formed selected from titanium nitride, tantalum nitride, titanium and combinations of the above.
- 7. the method for manufacture phase-change memory according to claim 1, it is characterised in that the barrier layer, the heating unit Part and the electrode structure include at least one identical material.
- 8. the method for manufacture phase-change memory according to claim 1, it is characterised in that first opening has a bottom Face and one side, and the barrier layer includes a bottom and a side wall is covered each by the bottom surface and the side of first opening.
- 9. the method for manufacture phase-change memory according to claim 1, it is characterised in that remove the phase transformation of the part The operation for changing material layer and the barrier layer of the part includes:Removed using cmp on first dielectric layer The barrier layer of side and the part of phase-change material layer.
- 10. the method for manufacture phase-change memory according to claim 1, it is characterised in that first opening and this Two openings have one first width and one second width respectively, and second width is 1.1 times to 1.6 times of first width.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510402332.7A CN105098071B (en) | 2015-07-08 | 2015-07-08 | The method for manufacturing phase-change memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510402332.7A CN105098071B (en) | 2015-07-08 | 2015-07-08 | The method for manufacturing phase-change memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105098071A CN105098071A (en) | 2015-11-25 |
CN105098071B true CN105098071B (en) | 2018-01-05 |
Family
ID=54578065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510402332.7A Active CN105098071B (en) | 2015-07-08 | 2015-07-08 | The method for manufacturing phase-change memory |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105098071B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105405971B (en) * | 2015-12-04 | 2018-02-06 | 江苏时代全芯存储科技有限公司 | Phase-change memory and its manufacture method |
CN105789437B (en) * | 2016-03-08 | 2018-06-19 | 江苏时代全芯存储科技有限公司 | The method for manufacturing phase-change memory |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1554125A (en) * | 2001-09-07 | 2004-12-08 | ض� | Phase change material memory device |
CN101142695A (en) * | 2004-12-30 | 2008-03-12 | 意法半导体股份有限公司 | Phase change memory and manufacturing method thereof |
CN101150172A (en) * | 2006-09-20 | 2008-03-26 | 财团法人工业技术研究院 | Phase change memory and its making method |
CN101241925A (en) * | 2007-02-09 | 2008-08-13 | 财团法人工业技术研究院 | Phase change memory device and its making method |
CN101252169A (en) * | 2007-01-05 | 2008-08-27 | 三星电子株式会社 | Phase change memory device and method of fabricating the same |
CN102667946A (en) * | 2009-11-25 | 2012-09-12 | 国际商业机器公司 | Phase change memory element |
CN203760518U (en) * | 2013-03-28 | 2014-08-06 | 意法半导体公司 | Semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7754522B2 (en) * | 2008-08-06 | 2010-07-13 | Micron Technology, Inc. | Phase change memory structures and methods |
-
2015
- 2015-07-08 CN CN201510402332.7A patent/CN105098071B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1554125A (en) * | 2001-09-07 | 2004-12-08 | ض� | Phase change material memory device |
CN101142695A (en) * | 2004-12-30 | 2008-03-12 | 意法半导体股份有限公司 | Phase change memory and manufacturing method thereof |
CN101150172A (en) * | 2006-09-20 | 2008-03-26 | 财团法人工业技术研究院 | Phase change memory and its making method |
CN101252169A (en) * | 2007-01-05 | 2008-08-27 | 三星电子株式会社 | Phase change memory device and method of fabricating the same |
CN101241925A (en) * | 2007-02-09 | 2008-08-13 | 财团法人工业技术研究院 | Phase change memory device and its making method |
CN102667946A (en) * | 2009-11-25 | 2012-09-12 | 国际商业机器公司 | Phase change memory element |
CN203760518U (en) * | 2013-03-28 | 2014-08-06 | 意法半导体公司 | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN105098071A (en) | 2015-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8212233B2 (en) | Forming phase-change memory using self-aligned contact/via scheme | |
CN102097587B (en) | Memory device having wide area phase change element and small electrode contact area | |
US7521706B2 (en) | Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same | |
CN205542903U (en) | Non -volatile ic memory unit and resistive random access storage structure | |
CN101013736A (en) | A pipe shaped phase change memory | |
TW202008514A (en) | Phase change memory structure, memory device and method for forming thereof | |
US8298938B2 (en) | Phase change memory cell structures and methods | |
US7606056B2 (en) | Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured | |
CN101783356B (en) | Semiconductor memory structures | |
KR100650752B1 (en) | Phase change ram device and method of manufacturing the same | |
US9508927B1 (en) | Phase change memory having a funnel-shaped heater and method of manufacturing the same | |
CN105098071B (en) | The method for manufacturing phase-change memory | |
US7989920B2 (en) | Phase change memory | |
CN105336851B (en) | The manufacture method of phase-change memory structure | |
US8597974B2 (en) | Confined resistance variable memory cells and methods | |
CN108123035B (en) | Phase change memory | |
CN105428524B (en) | The method for manufacturing phase-change memory | |
CN105428525B (en) | Phase change memory and manufacturing method thereof | |
CN105742488B (en) | Phase-change memory and the method for manufacturing phase-change memory | |
CN105405971B (en) | Phase-change memory and its manufacture method | |
US20240114807A1 (en) | Heater for phase change material memory cell | |
CN210897286U (en) | Memory cell and NAND type memory | |
KR101096436B1 (en) | Phase change memory device and method of manufacturing the same | |
CN105489759B (en) | Phase-change memory and its manufacture method | |
CN105702858A (en) | Phase-change memory and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170628 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co.,Ltd. Applicant after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 315195 Zhejiang city of Ningbo province Yinzhou Industrial Park (New Yinzhou District Jiang Shan Zhen Zhang Yu Cun) Applicant before: NINGBO ADVANCED MEMORY TECHNOLOGY Corp. Applicant before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Co-patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Patentee after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Address before: 223001 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Co-patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED Patentee before: Jiangsu times all core storage technology Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223001 No. 601, Changjiang East Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221010 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Patentee before: Beijing times full core storage technology Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
TR01 | Transfer of patent right |