CN105097396A - Impedance matching device and semiconductor processing equipment - Google Patents
Impedance matching device and semiconductor processing equipment Download PDFInfo
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- CN105097396A CN105097396A CN201410211047.2A CN201410211047A CN105097396A CN 105097396 A CN105097396 A CN 105097396A CN 201410211047 A CN201410211047 A CN 201410211047A CN 105097396 A CN105097396 A CN 105097396A
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Abstract
The invention provides an impedance matching device and semiconductor processing equipment. The impedance matching device is used for realizing matching of characteristic impedance and load impedance of a radio frequency power supply, and includes a matching network, the matching network includes impedance-adjustable elements, the impedance-adjustable elements include a capacitance selection unit and a variable capacitor connected in parallel, the capacitance selection unit includes an on-off switch and a fixed capacitor connected in series, the on-off switch is used for switching on or switching off a circuit where the fixed capacitor connected with the on-off switch is, and by control of switching-on or switching-off of the on-off switch of the impedance-adjustable elements, adjustment of the total capacitance value of the impedance-adjustable elements, thereby changing the load impedance of the radio frequency power supply. The impedance matching device provided by the invention can improve impedance matching efficiency, can rapidly realize matching under a circumstance of process switching and the like, and thus process stability and a process effect can be improved.
Description
Technical field
The invention belongs to semiconductor processing technology field, be specifically related to a kind of impedance-matching device and semiconductor processing equipment.
Background technology
Along with MEMS (micro electro mechanical system) (MicroelectromechanicalSystems, hereinafter referred to as MEMS) development, plasma dark silicon etching technology because of its have etch rate faster, depth-to-width ratio that higher selection is when larger advantage and be widely used.The general principle of dark silicon etching technology comprises: deposition step, that is: at deposited on sidewalls polymer, to form passivating film; Etch step, that is: carry out orientation etching to passivating film and silicon chip simultaneously; And deposition step and etch step alternate cycles are until arrive the requirement of dark silicon etching.
Fig. 1 is the theory diagram of plasma etching system.Refer to Fig. 1, plasma etching system comprises radio-frequency power supply 10, impedance-matching device 11 and reaction chamber 12, wherein, radio-frequency power supply 10 is electrically connected with reaction chamber 12 by impedance-matching device 11, in order to export radio-frequency power to reaction chamber 12, form plasma with the reacting gas in provocative reaction chamber 12, impedance-matching device 11 mates with load impedance for the characteristic impedance (being generally 50 Ω) realizing radio-frequency power supply 10, and the radio-frequency power exported to enable radio-frequency power supply 10 all transfers to reaction chamber 12, impedance-matching device 11 comprises detecting unit 111, controller 112, driver 113 and matching network 114, wherein, the voltage signal of detecting unit 111 on the transmission line detecting radio-frequency power supply 10 and current signal, and voltage signal and current signal are converted into digital signal and are sent to controller 112, controller 112 carries out control algolithm according to this digital signal and calculates the present load impedance of radio-frequency power supply 10 and the difference of characteristic impedance, and obtain relevant driver 113 (such as according to this difference, stepping motor) controling parameters (such as, rotation direction, slewing rate and rotation distance), driver 113 according to the impedance adjustable element in this controling parameters adjustment matching network 114 (such as, variable capacitance) capacitance, to change the load impedance of radio-frequency power supply 10 until match with the characteristic impedance of radio-frequency power supply 10, thus realize characteristic impedance and the load impedance automatic impedance matching of impedance-matching device 11 radio frequency power supply.
But, adopt above-mentioned impedance-matching device 11 often to there is following problem in actual applications:
The mode that the mechanical adjustment mode that above-mentioned impedance-matching device 11 rotates by stepping motor drives the capacitance of the variable capacitance of impedance adjustable element to change realizes impedance matching, its impedance matching time is by the matched position of impedance adjustable element, the preset reference positions of impedance adjustable element, the difference of present load impedance and characteristic impedance and the slewing rate of stepping motor determine, these factors can cause the impedance matching time longer, be generally a second rank, therefore, adopt above-mentioned impedance-matching device 11 can cause be a second rank match time when etch step and the deposition step switching of dark silicon etching process, the process time of this relative single etch step and deposition step is general only at 1 ~ 4 second, the time of impedance matching is longer, thus cause the stability of technique low poor with processing quality.
Summary of the invention
The present invention is intended to solve the technical problem existed in prior art, provide a kind of impedance-matching device and semiconductor processing equipment, it can improve impedance matching efficiency, in the situations such as technique switching, thus can realize coupling fast, thus can improve stability and the technological effect of technique.
For solving the problem, the invention provides a kind of impedance-matching device, characteristic impedance and load impedance for realizing radio-frequency power supply match, comprise matching network, described matching network comprises impedance adjustable element, described impedance adjustable element comprises capacitance selection unit parallel with one another and variable capacitance, wherein, described capacitance selection unit comprises on-off switch and the fixed capacity of series connection mutually, described on-off switch is used for conducting or turns off the described fixed capacity place circuit of connecting with it, by controlling being turned on or off and passing through to regulate the capacitance of described variable capacitance of the described on-off switch of described impedance adjustable element, realize the total capacitance regulating this impedance adjustable element, to change the load impedance of described radio-frequency power supply.
Wherein, also comprise detecting unit, control unit and performance element, wherein, described voltage signal and current signal for detecting voltage signal on described radio-frequency power supply transmission line and current signal, and are changed into digital signal and are sent to described control unit by described detecting unit; Described control unit is used for carrying out impedance matching computing according to this digital signal, to obtain the difference of present load impedance and characteristic impedance, and control conducting or the shutoff of the described on-off switch of impedance adjustable element described in described matching network according to this difference, to realize carrying out coarse adjustment to total capacitance of this impedance adjustable element; And control described performance element to regulate the capacitance of the described variable capacitance in this impedance adjustable element, to realize finely tuning total capacitance of this impedance adjustable element.
Wherein, described on-off switch comprises radio-frequency relay or PIN diode.
Wherein, the capacitance of described fixed capacity is set to the integral multiple of default step-length, and described default step-length is preset as the capacitance size of adjustable described variable capacitance within the millisecond rank time.
Wherein, also comprise detecting unit, control unit and performance element, wherein, described voltage signal and current signal for detecting voltage signal on described radio-frequency power supply transmission line and current signal, and are changed into digital signal and are sent to described control unit by described detecting unit; Described control unit is used for carrying out impedance matching computing according to this digital signal, to obtain the difference of present load impedance and characteristic impedance, and control conducting or the shutoff of the described on-off switch of impedance adjustable element described in described matching network according to this difference, to realize carrying out to total capacitance of this impedance adjustable element the coarse adjustment that capacitance is the integral multiple of described default step-length; And control described performance element to regulate the capacitance of the described variable capacitance in this impedance adjustable element, to realize finely tuning total capacitance of this impedance adjustable element.
Wherein, described impedance adjustable element comprises at least two described capacitance selection unit parallel with one another, and the capacitance of the described fixed capacity in capacitance selection unit described in each is different.
Wherein, described performance element comprises stepping motor.
The present invention also provides a kind of semiconductor processing equipment, comprise reaction chamber, radio-frequency power supply and impedance-matching device, described impedance-matching device is connected between described radio-frequency power supply and described reaction chamber, characteristic impedance and load impedance in order to realize described radio-frequency power supply match, and described impedance-matching device adopts above-mentioned impedance-matching device provided by the invention.
Wherein, described semiconductor processing equipment is the dark silicon etching equipment of plasma.
The present invention has following beneficial effect:
Impedance-matching device provided by the invention, impedance adjustable element in its matching network comprises capacitance selection unit parallel with one another and variable capacitance, capacitance selection unit comprises on-off switch and the fixed capacity of series connection mutually, on-off switch is used for conducting or turns off the fixed capacity place circuit of connecting with it, this makes total capacitance of this impedance adjustable element equal parallel with one another and the current capacitance sum of the capacitance of the fixed capacity of conducting and variable capacitance, therefore by the conducting of the on-off switch of control group adjustable element or shutoff and the capacitance regulating variable capacitance can be passed through, realize the total capacitance regulating this impedance adjustable element, to change the load impedance of radio-frequency power supply, until match with the characteristic impedance of radio-frequency power supply, as from the foregoing, by controlling the conducting of on-off switch or closing the total capacitance regulating impedance adjustable element, this regulates variable capacitance with the mechanical adjustment mode of only rotating by stepping motor in prior art and causes be compared with second rank match time, match time can be reduced, thus impedance matching efficiency can be improved, thus impedance matching can be realized fast in the situations such as technique switching, and then stability and the technological effect of technique can be improved.
Semiconductor processing equipment provided by the invention, it adopts impedance-matching device provided by the invention, can improve impedance matching efficiency, thus can realize impedance matching fast in the situations such as technique switching, thus can improve stability and the technological effect of technique.
Accompanying drawing explanation
Fig. 1 is the theory diagram of plasma etching system;
The theory diagram of the impedance-matching device that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 is the flow chart of the impedance-matching device shown in application drawing 2 in the dark silicon etching process of plasma.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, a kind of impedance-matching device provided by the invention and semiconductor processing equipment are described in detail.
The theory diagram of the impedance-matching device that Fig. 2 provides for the embodiment of the present invention.Refer to Fig. 2, the impedance-matching device that the present embodiment provides matches for the characteristic impedance (being generally 50 Ω) and load impedance realizing radio-frequency power supply RF, comprises matching network 20, detecting unit 21, control unit 22 and performance element 23.Wherein, matching network 20 comprises impedance adjustable element 201, impedance adjustable element 201 comprises capacitance selection unit parallel with one another and variable capacitance, capacitance selection unit comprises on-off switch K and the fixed capacity C of series connection mutually, on-off switch K is used for conducting or turns off the fixed capacity C place circuit of connecting with it, particularly, on-off switch K comprises radio-frequency relay or PIN diode, in this case, total capacitance of this impedance adjustable element 201 equals parallel with one another and the current capacitance sum of the capacitance of the fixed capacity C of conducting and variable capacitance, therefore can by the on-off switch K of control group adjustable element 201 being turned on or off and by regulating the capacitance of variable capacitance, realize the total capacitance regulating this impedance adjustable element 201, to change the load impedance of radio-frequency power supply RF, until match with the characteristic impedance of radio-frequency power supply RF, as from the foregoing, by controlling the conducting of on-off switch K or closing the total capacitance regulating impedance adjustable element 201, this regulates variable capacitance with the mechanical adjustment mode of only rotating by stepping motor in prior art and causes the impedance matching time to be compared with rank second, match time can be reduced, thus impedance matching efficiency can be improved, thus impedance matching can be realized fast in the situations such as technique switching, and then stability and the technological effect of technique can be improved.
In the present embodiment, impedance adjustable element 201 comprises at least two capacitance selection unit parallel with one another, and the capacitance of the fixed capacity C in each capacitance selection unit is different.Concrete, as shown in Figure 2, matching network 20 adopts " L " type matching network, it is included in the first impedance adjustable element 2011 and fixed inductance L that the transmission line of radio-frequency power supply RF is connected successively, and one end is connected on the transmission line between radio-frequency power supply RF and the first impedance adjustable element, second impedance adjustable element 2012 of other end ground connection, wherein, first impedance adjustable element 2011 comprises variable capacitance C1 and four capacitance selection unit parallel with one another, four capacitance selection unit parallel with one another are respectively on-off switch k11 and the fixed capacity c11 of serial connection mutually, on-off switch k12 and fixed capacity c12, on-off switch k13 and fixed capacity c13, on-off switch k14 and fixed capacity c14, wherein, the capacitance of fixed capacity c11-c14 is different, second impedance adjustable element 2012 comprises variable capacitance C2 and four capacitance selection unit parallel with one another, four capacitance selection unit parallel with one another are respectively on-off switch k21 and fixed capacity c21, on-off switch k22 and fixed capacity c22, on-off switch k23 and fixed capacity c23, the on-off switch k24 and fixed capacity c24 of serial connection mutually, wherein, the capacitance of fixed capacity c21-c24 is different.In this case, such as, the on-off switch k11 of the first impedance adjustable element 2011 and k12 conducting and on-off switch k13 and k14 can be controlled turn off, namely, optionally control the turn-on and turn-off of each on-off switch K, make total capacitance of this first this impedance adjustable element 2011 equal the capacitance of fixed capacity c11 and c12 and the current capacitance sum of variable capacitance C1.In actual applications, matching network 20 also can adopt other circuit forms such as " L " type or " π " type.
In the process of technique, preferably, coarse adjustment can be carried out by the total capacitance realized this impedance adjustable element 201 that is turned on or off of the on-off switch K controlling matching network 20 middle impedance adjustable element 201, and by regulating the capacitance of the variable capacitance in this impedance adjustable element 201, realize finely tuning total capacitance of this impedance adjustable element 201.So-called coarse adjustment refers to the adjustment carrying out in a big way to total capacitance of impedance adjustable element 201; So-called fine setting refers to the adjustment carrying out more among a small circle to total capacitance of impedance adjustable element 201, such as, for the total capacitance realizing impedance adjustable element 201 is 230pF, then can first coarse adjustment 200pF, then finely tune 30pF (prerequisite is the initial capacitance of variable capacitance is 0pF).As from the foregoing, adjusting on a large scale by controlling being turned on or off of on-off switch K, being rotated the adjustment regulating the capacitance of variable capacitance to carry out among a small circle by driving mechanism, match time can be reduced further, thus matching efficiency can be improved further.In actual applications, specifically should set the scope of carrying out finely tuning, to ensure that rate matched meets the demands.
In the present embodiment, voltage signal and current signal for detecting voltage signal on radio-frequency power supply RF transmission line and current signal, and are changed into digital signal and are sent to control unit 22 by detecting unit 21, and particularly, detecting unit 21 comprises transducer; Control unit 22 is for carrying out impedance matching computing according to this digital signal, to obtain the difference of present load impedance and characteristic impedance, and control conducting or the shutoff of the on-off switch K of matching network 20 middle impedance adjustable element 201 according to this difference, to realize carrying out coarse adjustment to total capacitance of this impedance adjustable element 201; And control the capacitance that performance element 23 regulates the variable capacitance in this impedance adjustable element 201, to realize finely tuning total capacitance of this impedance adjustable element 201, to change total capacitance of this impedance adjustable element 201, thus the load impedance of radio-frequency power supply RF is changed, until match with the characteristic impedance (being generally 50 Ω) of radio-frequency power supply RF, thus the impedance-matching device adopting the present embodiment to provide can realize automatic impedance matching.Particularly, control unit 22 is dsp controller, and performance element 23 comprises the driving mechanism of such as stepping motor.
In the present embodiment, preferably, the capacitance of the fixed capacity C of impedance-matching device middle impedance adjustable element 201 is set to the integral multiple of default step-length, default step-length is preset as the capacitance size of adjustable variable electric capacity within the millisecond rank time, particularly, default step-length is preset as the capacitance that performance element regulates variable capacitance within the millisecond rank time, when performance element is stepping motor, because when stepping motor performs a step, the required time is generally a millisecond rank, therefore, default step-length is set to the capacitance size that stepping motor performs the variable capacitance that a step correspondence regulates usually, such as, when the frequency of stepping motor is 0.5kHz, when the capacitance scope of variable capacitance is 1500pF, stepping motor performs a step needs the time to be 50ms, the capacitance size of corresponding adjustable variable electric capacity is 25pF, therefore, default step-length is set to 25pF.
In these cases, control unit 22 controls conducting or the shutoff of the on-off switch K of matching network 20 middle impedance adjustable element 201, to realize carrying out to total capacitance of this impedance adjustable element 201 coarse adjustment that capacitance is the integral multiple of default step-length according to the difference of present load impedance and characteristic impedance; And control the capacitance that performance element 23 regulates the variable capacitance in this impedance adjustable element 201, to realize finely tuning total capacitance of this impedance adjustable element 201.Such as, in the dark silicon etching process of plasma, the scope of impedance adjustable element 201 capacitance is generally at 25 ~ 375pF, and default step-length is 25pF; Particularly, as shown in Figure 2, the capacitance of each fixed capacity c11 ~ c14 (fixed capacity c21 ~ c24) is respectively the integral multiple of default step-length 25pF, is 25pF, 50pF, 100pF and 200pF; Such as, when the capacitance for realizing the first impedance adjustment element 2011 being 175pF, controlling on-off switch K11, K12 and K13 conducting, that is, carrying out the coarse adjustment that capacitance is the integral multiple of default step-length 25pF; For another example, when the capacitance for realizing the first impedance adjustment element 2011 is 400pF, not only need to control on-off switch K11, K12, K13 and K14 conducting, namely, carry out the coarse adjustment that capacitance is the integral multiple of default step-length 25pF, also needing to control performance element 23 is 25pF (prerequisite is that the initial capacitance of variable capacitance C1 is for 0pF) to regulate the capacitance of variable capacitance C1, that is, finely tune within the scope of default step-length 25pF.
The detailed process applying the impedance-matching device that the embodiment of the present invention provides in the dark silicon etching process of plasma is described below in detail.Particularly, refer to Fig. 3, the dark silicon etching process process of plasma comprises the following steps:
Step S1, judges whether radio-frequency power supply RF opens, if open, then enters step S2, if not, then enters step S8;
Step S2, at radio-frequency power supply RF build-up of luminance to be formed in isoionic process, impedance-matching device controls performance element 23 by control unit 22 and regulates the capacitance of variable capacitance to carry out automatic impedance matching;
Step S3, judges whether realize impedance matching in build-up of luminance process, if so, then enters step S4, if not, then enter step S2;
Step S4, enters etch step, judges whether to realize impedance matching, if so, then enter step S5 in the process of etching; If not, then step S7 is entered;
Step S5, enters deposition step, judges whether to realize impedance matching, if so, then enter step S6 in the process of deposition; If not, then step S7 is entered;
Step S6, judges whether the number of times of etch step and deposition step alternate cycles arrives preset loop number of times, and if so, then technique terminates; If not, then step S4 is entered;
Step S7, impedance-matching device by the control unit 22 optionally conducting of the on-off switch K of control group adjustable element 201 or shutoff, to realize carrying out to this impedance adjustable element 201 coarse adjustment that capacitance is the integral multiple of default step-length; And control the capacitance that performance element 23 regulates the variable capacitance in this impedance adjustable element 201, to realize the fine setting this impedance adjustable element 201 being carried out to capacitance, thus can automatic impedance matching be realized;
Step S8, impedance-matching device controls performance element 23 by control unit 22 and regulates variable capacitance to arrive its preset initial value, and/or, control conducting or the shutoff of the on-off switch K of matching network 20 middle impedance adjustable element 201, preset switches state (that is, conducting or shutoff) is positioned to make each on-off switch K.
Easy understand, in the present embodiment, because performance element 23 adopts stepping motor, according to the characteristic of stepping motor, make the fine setting by stepping motor, variable capacitance being carried out to default step-length integral multiple, that is, realize presetting the adjustment on a large scale of step-length integral multiple by controlling being turned on or off of on-off switch K, and by stepping motor, variable capacitance is carried out to the adjustment among a small circle of default step-length integral multiple, this stepping motor performs a step makes the capacitance of variable capacitance C1 regulate default step-length 25pF only to need 50ms, therefore, this can make fine setting realize rapidly, thus the requirement realizing Rapid matching can be met.In actual applications, the setting presetting step-length can according to the optimum configurations of performance element 23, variable capacitance to meet the requirement realizing impedance matching fast.
It should be noted that, said process just applies a kind of detailed process of the impedance-matching device that the embodiment of the present invention provides in the dark silicon etching process of plasma.In actual applications, also conducting or the shutoff of the on-off switch K of matching network 20 middle impedance adjustable element 201 can be controlled in step s 2 by means of only control unit 22, or, also comprise in step s 2 and regulate the capacitance of variable capacitance to realize automatic impedance matching by controlling performance element 23; In addition, also can control conducting or the shutoff of the on-off switch K of matching network 20 middle impedance adjustable element 201 in the step s 7 by means of only control unit 22, realize regulating total capacitance of impedance adjustable element 201.
Also it should be noted that, in the present embodiment, the impedance adjustable element 201 that each variable capacitance in " L " matching network 20 all adopts the present embodiment to provide.But the present invention is not limited thereto, in actual applications, the impedance adjustable element 201 that also the present embodiment can be adopted to provide according at least one variable capacitance in actual conditions determination matching network 20.
It should be noted that in addition, in the present embodiment, when requiring lower technical process (such as other to rate matched, general single step etching technics) time, conducting or shutoff can be remained by each on-off switch K in control group regulon, make the fixed capacity C of mutual conduction in parallel with variable capacitance, this can expand the load coverage of matching network 20, thus can avoid causing matching network 20 to meet the demands because of the transformation of the hardware such as process conditions or coil, namely, can avoid needing to transform matching network because of the transformation of the hardware such as process conditions or coil, thus the practicality of impedance-matching device can be improved.
As another one technical scheme, the present invention also provides a kind of semiconductor processing equipment, comprise reaction chamber, radio-frequency power supply and impedance-matching device, impedance-matching device is connected between radio-frequency power supply and reaction chamber, characteristic impedance and load impedance in order to realize radio-frequency power supply match, the radio-frequency power exported to make radio-frequency power supply all exports provocative reaction gas in reaction chamber to and forms plasma, wherein, the impedance-matching device impedance-matching device that adopts the above embodiment of the present invention to provide.
In the present embodiment, semiconductor processing equipment is the dark silicon etching equipment of plasma, specific embodiment, see the description of applying the detailed process of the impedance-matching device that the embodiment of the present invention provides in the above embodiment of the present invention in the dark silicon etching process of plasma, does not repeat them here.
The semiconductor processing equipment that the present embodiment provides, its impedance-matching device adopting the above embodiment of the present invention to provide, impedance matching efficiency can be improved, thus can realize impedance matching fast in the situations such as technique switching, thus stability and the technological effect of technique can be improved.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, when not departing from principle of the present invention and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (9)
1. an impedance-matching device, matches for the characteristic impedance and load impedance realizing radio-frequency power supply, comprises matching network, described matching network comprises impedance adjustable element, it is characterized in that, described impedance adjustable element comprises capacitance selection unit parallel with one another and variable capacitance, wherein
Described capacitance selection unit comprises on-off switch and the fixed capacity of series connection mutually, described on-off switch is used for conducting or turns off the described fixed capacity place circuit of connecting with it, by controlling being turned on or off and passing through to regulate the capacitance of described variable capacitance of the described on-off switch of described impedance adjustable element, realize the total capacitance regulating this impedance adjustable element, to change the load impedance of described radio-frequency power supply.
2. impedance-matching device according to claim 1, is characterized in that, also comprises detecting unit, control unit and performance element, wherein,
Described voltage signal and current signal for detecting voltage signal on described radio-frequency power supply transmission line and current signal, and are changed into digital signal and are sent to described control unit by described detecting unit;
Described control unit is used for carrying out impedance matching computing according to this digital signal, to obtain the difference of present load impedance and characteristic impedance, and control conducting or the shutoff of the described on-off switch of impedance adjustable element described in described matching network according to this difference, to realize carrying out coarse adjustment to total capacitance of this impedance adjustable element; And control described performance element to regulate the capacitance of the described variable capacitance in this impedance adjustable element, to realize finely tuning total capacitance of this impedance adjustable element.
3. impedance-matching device according to claim 1, is characterized in that, described on-off switch comprises radio-frequency relay or PIN diode.
4. impedance-matching device according to claim 1, is characterized in that, the capacitance of described fixed capacity is set to the integral multiple of default step-length, and described default step-length is preset as the capacitance size of adjustable described variable capacitance within the millisecond rank time.
5. impedance-matching device according to claim 4, is characterized in that, also comprises detecting unit, control unit and performance element, wherein,
Described voltage signal and current signal for detecting voltage signal on described radio-frequency power supply transmission line and current signal, and are changed into digital signal and are sent to described control unit by described detecting unit;
Described control unit is used for carrying out impedance matching computing according to this digital signal, to obtain the difference of present load impedance and characteristic impedance, and control conducting or the shutoff of the described on-off switch of impedance adjustable element described in described matching network according to this difference, to realize carrying out to total capacitance of this impedance adjustable element the coarse adjustment that capacitance is the integral multiple of described default step-length; And control described performance element to regulate the capacitance of the described variable capacitance in this impedance adjustable element, to realize finely tuning total capacitance of this impedance adjustable element.
6. the impedance-matching device according to claim 1 or 4, is characterized in that, described impedance adjustable element comprises at least two described capacitance selection unit parallel with one another, and the capacitance of the described fixed capacity in capacitance selection unit described in each is different.
7. the impedance-matching device according to claim 2 or 5, is characterized in that, described performance element comprises stepping motor.
8. a semiconductor processing equipment, comprise reaction chamber, radio-frequency power supply and impedance-matching device, described impedance-matching device is connected between described radio-frequency power supply and described reaction chamber, characteristic impedance and load impedance in order to realize described radio-frequency power supply match, it is characterized in that, described impedance-matching device adopts the impedance-matching device described in claim 1-7 any one.
9. semiconductor processing equipment according to claim 8, is characterized in that, described semiconductor processing equipment is the dark silicon etching equipment of plasma.
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