CN105097130A - Preparation method of high-strength and high-conductivity copper or copper alloy lead containing graphene - Google Patents

Preparation method of high-strength and high-conductivity copper or copper alloy lead containing graphene Download PDF

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Publication number
CN105097130A
CN105097130A CN201510388122.7A CN201510388122A CN105097130A CN 105097130 A CN105097130 A CN 105097130A CN 201510388122 A CN201510388122 A CN 201510388122A CN 105097130 A CN105097130 A CN 105097130A
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China
Prior art keywords
copper
copper alloy
preparation
alloy wire
graphene
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CN201510388122.7A
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Chinese (zh)
Inventor
燕绍九
洪起虎
杨程
戴圣龙
李炯利
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BEIJING INSTITUTE OF AERONAUTICAL MATERIALS CHINA AVIATION INDUSTRY GROUP Corp
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BEIJING INSTITUTE OF AERONAUTICAL MATERIALS CHINA AVIATION INDUSTRY GROUP Corp
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Priority to CN201510388122.7A priority Critical patent/CN105097130A/en
Publication of CN105097130A publication Critical patent/CN105097130A/en
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Abstract

The invention provides a preparation method of a high-strength and high-conductivity copper or copper alloy lead containing graphene. The method comprises the following steps: (1) preparing a copper or copper alloy spindle containing a reinforcing phase by a powder metallurgy process or a melting process; (2) preparing a lead from the copper or copper alloy spindle by a deformation process; and (3) growing a layer of graphene film or multiple layers of graphene films from the copper or copper alloy lead in a chemical vapor deposition (CVD) furnace. The method provided by the invention has the advantages of being simple in preparation technology and easy to industrialize; the prepared copper or copper alloy lead has the advantages of high strength and high conductivity; and the copper or copper alloy lead prepared by the method provided by the invention has a wide application prospect in high-voltage and extra-high-voltage cable industries.

Description

A kind of preparation method of high strength, high conductivity copper or the copper alloy wire containing Graphene
Technical field
The present invention relates to a kind of preparation method of composite material, be specifically related to a kind of containing the copper of Graphene or the preparation method of copper alloy wire.
Background technology
Graphene is a kind of New Two Dimensional nano material, and its intensity, up to 1.01Tpa, be 100 times of structural steel, and density is 1/5 of structural steel.Because Graphene density is little, the density of material while improving Strength of Metallic Materials, can also be reduced.Graphene also has the electron mobility (200000cm of superelevation simultaneously 2/ VS), the excellent properties such as conductivity, thermal conductivity (5000W/mK), Young's modulus (1100GPa), therefore by metal material compounds such as Graphene and aluminium, titanium, magnesium, expection can obtain high-strength light, have both the composite material of the structure-function integration of the functional characteristics such as conduction, heat conduction.
While Graphene has superhigh intensity, also having superpower electric conductivity, is current conductivity best material.If added to by Graphene in copper, prepare copper base alkene alloy, the electric conductivity of copper can also be improved while improving copper intensity.
According to statistics, if the conductance of copper alloy improves 1%, the whole nation is annual saves hundred million kilowatts of degree electricity; Meanwhile, if improved with intensity, the application of copper cable large span aerial condutor can just be realized.The intensity of copper alloy and conductivity, at this stage under technical conditions, have been difficult to increase.Therefore need to provide a kind of preparation technology simple, be convenient to the Graphene of industrial large-scale promotion application and the preparation method of metal material composite material.
Summary of the invention
The present invention is directed to the preparation method that the deficiency existed in above-mentioned current material and technology provides a kind of high strength, high conductivity copper or copper alloy wire containing Graphene.Its objective is and prepare the copper or copper alloy wire with high strength and high conductivity by the inventive method.
For achieving the above object, the present invention is by the following technical solutions:
A preparation method for high strength containing Graphene, high conductivity copper or copper alloy wire, the method comprises the steps:
1) preparation contains copper or the copper alloy ingot of wild phase
A. preparation contains copper or the copper alloy powder mixture of the wild phase of 0.5% ~ 15% mass percent;
B. ball milling step a gained mixture 20 ~ 40h under 40 ~ 120r/min rotating speed;
C. cold moudling under 350 ~ 500Mpa, under the protection and 850 ~ 950 DEG C of temperature of inert gas, sintered copper or copper alloy ingot 1 ~ 5h;
2) copper or copper alloy wire is prepared
Φ 5 ~ 20mm bar hot-extrusion copper at 800 ~ 900 DEG C or copper alloy ingot obtained is drawn into the silk material of Φ 0.3 ~ 2mm;
3) at the superficial growth graphene film of copper or copper alloy wire
By " ROLL-TO-ROLL " technique, by obtained copper or copper alloy silk in ventilating methane gas, temperature is at least process 30min in the CVD stove of 900 ~ 1200 DEG C, obtains copper or the copper alloy wire of superficial growth 1 ~ 10 layer graphene film.
First optimal technical scheme of described copper or the preparation method of copper alloy wire, described step 1) described smelting technology comprise: the mixture of melting wild phase and copper or copper alloy powder at 1200 ~ 1220 DEG C; Add phosphor-copper deoxidation in the ratio of melting liquid quality 0.3 ~ 0.4%, skim after stirring; In 1100 ~ 1200 DEG C, melting liquid is cast copper or copper alloy ingot.
Second optimal technical scheme of described copper or the preparation method of copper alloy wire, step 1) described in wild phase be selected from one or more materials in Graphene, carbon nano-tube, pottery.
3rd optimal technical scheme of described copper or the preparation method of copper alloy wire, the mass percent of wild phase described in step a is 0.5% ~ 10%.
4th optimal technical scheme of described copper or the preparation method of copper alloy wire, the mass percent of wild phase described in step a is 5%.
5th optimal technical scheme of described copper or the preparation method of copper alloy wire, the rotating speed of ball milling described in step b is 60r/min.
6th optimal technical scheme of described copper or the preparation method of copper alloy wire, briquetting pressure described in step c is 470MPa.
7th optimal technical scheme of described copper or the preparation method of copper alloy wire, the temperature sintered described in step c is 900 DEG C, and the time is 2h.
8th optimal technical scheme of described copper or the preparation method of copper alloy wire, step 3) described in the temperature of CVD stove be 1000 DEG C.
9th optimal technical scheme of described copper or the preparation method of copper alloy wire, step 3) described in graphene film be 3 ~ 10 layers.
With immediate prior art ratio, the present invention has following effect:
1) inside that prepared by the inventive method is contained wild phase, the copper of outer surface growing graphene film or copper alloy wire and is had high strength and high conductivity;
2) method technique provided by the invention is simple, is easy to industrialization, in high pressure and extra-high-tension cable industry, has application prospect.
Embodiment
Below with reference to embodiment, technical solution of the present invention is further described:
Embodiment 1
Containing the high strength of Graphene, a preparation method for high conductivity copper conductor, the method comprises the steps:
1) copper ingot of preparation containing Graphene
A. prepare the mixture of Graphene and copper powder, the mass percent wherein shared by Graphene is 1%;
B. Graphite alkene and copper powder mixture 20h under 60r/min rotating speed;
C. cold moudling under 350MPa, under the protection and 850 DEG C of temperature of inert gas, sintering copper ingot 1h;
2) copper conductor is prepared
The Φ 5mm bar obtained by hot extrusion copper ingot at 800 DEG C is drawn into the silk material of Φ 0.5mm;
3) at the superficial growth graphene film of copper conductor
By " ROLL-TO-ROLL " technique, by obtained copper wire in be connected with methane gas, temperature is process 30min in the CVD stove of 1000 DEG C, obtains the copper conductor of superficial growth 3 layer graphene film.
Embodiment 2
Containing the high strength of Graphene, a preparation method for high conductivity copper alloy wire, the method comprises the steps:
1) the copper alloy ingot of preparation containing Graphene
A. prepare the mixture of Graphene and copper alloy powder, the mass percent wherein shared by Graphene is 5%;
B. Graphite alkene and copper alloy powder mixture 25h under 60r/min rotating speed;
C. cold moudling under 400MPa, under the protection and 900 DEG C of temperature of inert gas, sintered copper alloy ingot 2h;
2) copper alloy wire is prepared
The Φ 9.5mm bar obtained by hot-extrusion copper alloy pig at 850 DEG C is drawn into the silk material of Φ 0.3mm;
3) at the superficial growth graphene film of copper alloy wire
By " ROLL-TO-ROLL " technique, by obtained copper alloy silk in be connected with methane gas, temperature is process 60min in the CVD stove of 1000 DEG C, obtains the copper alloy wire of superficial growth 5 layer graphene film.
Embodiment 3
Containing the high strength of Graphene, a preparation method for high conductivity copper alloy wire, the method comprises the steps:
1) the copper alloy ingot of preparation containing carbon nano-tube
A. configure the mixture of carbon nano-tube and copper alloy powder, the mass percent wherein shared by carbon nano-tube is 2%;
B. ball milling carbon nano-tube and copper alloy powder mixture 30h under 60r/min rotating speed;
C. cold moudling under 400MPa, under the protection and 850 DEG C of temperature of inert gas, sintered copper alloy ingot 3h;
2) copper alloy wire is prepared
The Φ 20mm bar obtained by hot-extrusion copper alloy pig at 900 DEG C is drawn into the silk material of Φ 1.8mm;
3) at the superficial growth graphene film of copper alloy wire
By " ROLL-TO-ROLL " technique, by obtained copper alloy silk in be connected with methane gas, temperature is process 80min in the CVD stove of 1000 DEG C, obtains the copper alloy wire of superficial growth 7 layer graphene film.
Embodiment 4
Containing the high strength of Graphene, a preparation method for high conductivity copper alloy wire, the method comprises the steps:
1) the copper alloy ingot of preparation containing pottery
A. configuration pottery and copper alloy powder mixture, the mass percent wherein shared by pottery is 5%;
B. ball-milling ceramic and copper alloy powder mixture 20h under 60r/min rotating speed;
C. cold moudling under 450MPa, under the protection and 950 DEG C of temperature of inert gas, sintered copper alloy ingot 1h;
2) copper alloy wire is prepared
The Φ 12mm bar obtained by hot-extrusion copper alloy pig at 900 DEG C is drawn into the silk material of Φ 0.8mm;
3) at the superficial growth graphene film of copper alloy wire
By " ROLL-TO-ROLL " technique, by obtained copper alloy silk in be connected with methane gas, temperature is process 100min in the CVD stove of 1000 DEG C, obtains the copper alloy wire of superficial growth 8 layer graphene film.
Embodiment 5
Containing the high strength of Graphene, a preparation method for high conductivity copper conductor, the method comprises the steps:
1) copper ingot of preparation containing Graphene
A. configure the mixture of Graphene and copper powder, the mass percent wherein shared by Graphene is 10%;
B. Graphite alkene and copper powder mixture 40h under 60r/min rotating speed;
C. cold moudling under 470MPa, under the protection and 900 DEG C of temperature of inert gas, sintering copper ingot 2h;
2) copper conductor is prepared
The Φ 10mm bar obtained by hot extrusion copper ingot at 850 DEG C is drawn into the silk material of Φ 0.5mm;
3) at the superficial growth graphene film of copper conductor
By " ROLL-TO-ROLL " technique, by obtained copper wire in be connected with methane gas, temperature is process 150min in the CVD stove of 1000 DEG C, obtains the copper conductor of superficial growth 10 layer graphene film.
Embodiment 6
Containing the high strength of Graphene, a preparation method for high conductivity copper alloy wire, the method comprises the steps:
1) the copper alloy ingot of preparation containing Graphene
A. configure Graphene and copper alloy powder mixture, the mass percent wherein shared by Graphene is 8.5%;
B. Graphite alkene and copper alloy powder mixture 35h under 60r/min rotating speed;
C. cold moudling under 500MPa, under the protection and 850 DEG C of temperature of inert gas, sintered copper alloy ingot 5h;
2) copper alloy wire is prepared
The Φ 15mm bar obtained by hot-extrusion copper alloy pig at 900 DEG C is drawn into the silk material of Φ 0.4mm;
3) at the superficial growth graphene film of copper alloy wire
By " ROLL-TO-ROLL " technique, by obtained copper alloy silk in be connected with methane gas, temperature is process 100min in the CVD stove of 1000 DEG C, obtains the copper alloy wire of superficial growth 6 layer graphene film.
Embodiment 7
Containing the high strength of Graphene, a preparation method for high conductivity copper alloy wire, the method comprises the steps:
1) the copper alloy ingot of preparation containing Graphene
A. configure Graphene and copper alloy powder mixture, the mass percent wherein shared by Graphene is 5%;
B. melting mixture at 1200 DEG C, adds the phosphor-copper accounting for melting liquid quality 0.3% and carries out deoxidation, skim after stirring;
C. in 1100 DEG C, melting liquid is cast copper or copper alloy ingot.
2) copper alloy wire is prepared
The Φ 9.5mm bar obtained by hot-extrusion copper alloy pig at 900 DEG C is drawn into the silk material of Φ 0.4mm;
3) at the superficial growth graphene film of copper alloy wire
By " ROLL-TO-ROLL " technique, by obtained copper alloy silk in be connected with methane gas, temperature is process 100min in the CVD stove of 1000 DEG C, obtains the copper alloy wire of superficial growth 6 layer graphene film.
Above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; those of ordinary skill in the field are to be understood that; can modify to the specific embodiment of the present invention with reference to above-described embodiment or equivalent to replace, these do not depart from any amendment of spirit and scope of the invention or equivalently to replace within the claims that all awaits the reply in application.

Claims (10)

1. a preparation method for the high strength containing Graphene, high conductivity copper or copper alloy wire, the method comprises the steps:
1) preparation contains copper or the copper alloy ingot of wild phase
A. preparation contains copper or the copper alloy powder mixture of the wild phase of 0.5% ~ 15% mass percent;
B. ball milling step a gained mixture 20 ~ 40h under 40 ~ 120r/min rotating speed;
C. cold moudling under 350 ~ 500Mpa, under the protection and 850 ~ 950 DEG C of temperature of inert gas, sintered copper or copper alloy ingot 1 ~ 5h;
2) copper or copper alloy wire is prepared
Φ 5 ~ 20mm bar hot-extrusion copper at 800 ~ 900 DEG C or copper alloy ingot obtained is drawn into the silk material of Φ 0.3 ~ 2mm;
3) at the superficial growth graphene film of copper or copper alloy wire
By " ROLL-TO-ROLL " technique, by obtained copper or copper alloy silk in ventilating methane gas, temperature is at least process 30min in the CVD stove of 900 ~ 1200 DEG C, obtains copper or the copper alloy wire of superficial growth 1 ~ 10 layer graphene film.
2. the preparation method of copper according to claim 1 or copper alloy wire, is characterized in that described step 1) described smelting technology comprise: the mixture of melting wild phase and copper or copper alloy powder at 1200 ~ 1220 DEG C; Add phosphor-copper deoxidation in the ratio of melting liquid quality 0.3 ~ 0.4%, skim after stirring; In 1100 ~ 1200 DEG C, melting liquid is cast copper or copper alloy ingot.
3. the preparation method of copper according to claim 1 or copper alloy wire, is characterized in that step 1) described in wild phase be selected from one or more materials in Graphene, carbon nano-tube, pottery.
4. the preparation method of copper according to claim 1 or copper alloy wire, is characterized in that the mass percent of wild phase described in step a is 0.5% ~ 10%.
5. the preparation method of copper according to claim 4 or copper alloy wire, is characterized in that the mass percent of wild phase described in step a is 5%.
6. the preparation method of copper according to claim 1 or copper alloy wire, is characterized in that the rotating speed of ball milling described in step b is 60r/min.
7. the preparation method of copper according to claim 1 or copper alloy wire, is characterized in that briquetting pressure described in step c is 470MPa.
8. the preparation method of copper according to claim 1 or copper alloy wire, it is characterized in that the temperature sintered described in step c is 900 DEG C, the time is 2h.
9. the preparation method of copper according to claim 1 or copper alloy wire, is characterized in that step 3) described in the temperature of CVD stove be 1000 DEG C.
10. the preparation method of copper according to claim 1 or copper alloy wire, is characterized in that step 3) described in graphene film be 3 ~ 10 layers.
CN201510388122.7A 2015-06-25 2015-06-25 Preparation method of high-strength and high-conductivity copper or copper alloy lead containing graphene Pending CN105097130A (en)

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Cited By (6)

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Publication number Priority date Publication date Assignee Title
CN105957629A (en) * 2016-07-13 2016-09-21 山东科虹线缆科技股份有限公司 Nano graphene medium voltage power cable and manufacturing method thereof
CN106206926A (en) * 2016-08-23 2016-12-07 西部超导材料科技股份有限公司 A kind of intensifying method of Bi2223 superconductor
CN106548831A (en) * 2016-12-10 2017-03-29 西北有色金属研究院 A kind of preparation method of Graphene copper composite wire material
CN109524147A (en) * 2018-12-29 2019-03-26 厦门十维科技有限公司 The preparation method of high-conductivity composite material based on graphene
JP2020531293A (en) * 2017-08-30 2020-11-05 ウルトラ、コンダクティブ、コッパー、カンパニー、インコーポレイテッドUltra Conductive Copper Company, Inc. Wire drawing method and system
JP2020532433A (en) * 2017-08-30 2020-11-12 ウルトラ、コンダクティブ、コッパー、カンパニー、インコーポレイテッドUltra Conductive Copper Company, Inc. Methods and systems for forming multi-layer composite structures

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CN103794298A (en) * 2014-01-23 2014-05-14 中国科学院过程工程研究所 Preparation method for graphene wires
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957629A (en) * 2016-07-13 2016-09-21 山东科虹线缆科技股份有限公司 Nano graphene medium voltage power cable and manufacturing method thereof
CN106206926A (en) * 2016-08-23 2016-12-07 西部超导材料科技股份有限公司 A kind of intensifying method of Bi2223 superconductor
CN106206926B (en) * 2016-08-23 2019-07-02 西部超导材料科技股份有限公司 A kind of intensifying method of Bi2223 superconductor
CN106548831A (en) * 2016-12-10 2017-03-29 西北有色金属研究院 A kind of preparation method of Graphene copper composite wire material
CN106548831B (en) * 2016-12-10 2017-09-15 西北有色金属研究院 A kind of preparation method of graphene copper composite wire material
JP2020531293A (en) * 2017-08-30 2020-11-05 ウルトラ、コンダクティブ、コッパー、カンパニー、インコーポレイテッドUltra Conductive Copper Company, Inc. Wire drawing method and system
JP2020532433A (en) * 2017-08-30 2020-11-12 ウルトラ、コンダクティブ、コッパー、カンパニー、インコーポレイテッドUltra Conductive Copper Company, Inc. Methods and systems for forming multi-layer composite structures
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CN109524147A (en) * 2018-12-29 2019-03-26 厦门十维科技有限公司 The preparation method of high-conductivity composite material based on graphene

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