CN105093089A - High voltage diode over-temperature recovery capability detection method and system device thereof - Google Patents
High voltage diode over-temperature recovery capability detection method and system device thereof Download PDFInfo
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- CN105093089A CN105093089A CN201510576664.7A CN201510576664A CN105093089A CN 105093089 A CN105093089 A CN 105093089A CN 201510576664 A CN201510576664 A CN 201510576664A CN 105093089 A CN105093089 A CN 105093089A
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Abstract
The invention relates to a high voltage diode over-temperature recovery capability detection method and a system device thereof. According to the high voltage diode over-temperature recovery capability detection method, a high voltage diode is gradually heated, invariant reverse direction direct current IRM applied to the diode can be maintained through adjusting reverse direction voltage VR applied to the diode, the heating temperature of the high voltage diode is simultaneously and gradually adjusted till the reverse direction voltage VR is smaller than the rated setting value, and the reverse direction voltage VR and the temperature value are automatically recorded to form a change curve of the reverse direction voltage and the temperature, so over-temperature recovery capability of the high voltage diode can be acquired through analyzing the curve. The method is advantaged in that design is simple, and the method is simple, the over-temperature recovery capability of the high voltage diode can be conveniently and rapidly detected through the method and the device, certain data is acquired, and technical blank in the aspect can be made up.
Description
Technical field
The present invention relates to diode excess temperature ability detection field, be specifically related to a kind of high-voltage diode excess temperature recovery capability detection method and system and device thereof.
Background technology
Also do not detect related data to high-voltage diode excess temperature recovery capability at present, do not have the standard of comparison of high-voltage diode excess temperature recovery capability, this patent is blank in order to make up this.
Summary of the invention
In order to solve the problem, the present invention proposes a kind of high-voltage diode excess temperature recovery capability detection method and system and device thereof, method is simple, and device advantages of simple, solves this technological gap problem.
In order to reach foregoing invention object, the present invention proposes following technical scheme:
High-voltage diode excess temperature recovery capability detection method, by heating to high-voltage diode step by step, by adjusting applying reverse voltage VR on the diode to keep diode applying constant reverse dc IRM, adjust the warm temperature of high-voltage diode step by step simultaneously, until reverse voltage VR is less than specified setting value, automatically record reverse voltage VR simultaneously, temperature value, form the change curve of a reverse voltage and temperature, thus analyze this curve to obtain high-voltage diode excess temperature recovery capability.
A kind of high-voltage diode excess temperature recovery capability detection system device, it comprises control system device, VR generator, VR output control circuit, inverse current detected value and setting current value comparator circuit, inverse current IRM detects and initialization circuit, diode heated at constant temperature temperature system device, high-voltage diode, high-voltage diode positive terminal connects inverse current IRM and detects and initialization circuit, inverse current IRM detects and initialization circuit connects inverse current detected value and setting current value comparator circuit by signal wire, inverse current detected value is connected VR output control circuit with setting current value comparator circuit by signal wire, VR output control circuit connects VR generator by signal wire, VR generator connects the negative pole end of high-voltage diode by signal wire, high-voltage diode is contained in diode heated at constant temperature temperature system device, diode heated at constant temperature temperature system device one end is by signal wire connection control system device, control system device connects VR generator and inverse current detected value respectively by two signal wires and sets current value comparator circuit.
The IRM constant control that described control system device is made up of 80C51 series monolithic, VR regulates and temperature, voltage, electric current revelation and display system apparatus.
Described high-voltage diode is high-voltage great-current silicon stack.
Advantage of the present invention is simplicity of design, and method is reasonable, conveniently can detect high-voltage diode excess temperature recovery capability, draw some data, make up technological gap in this respect by this method and this device.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention.
Embodiment
With reference to accompanying drawing 1, a kind of high-voltage diode excess temperature recovery capability detection system device, it comprises control system device
1, the automatic control system be made up of single-chip microcomputer
2, reverse voltage circuit for generating (VR generator)
3, VR output control circuit
4, inverse current detected value and setting current value comparator circuit
5, inverse current IRM detects and initialization circuit
6, diode heated at constant temperature temperature system
7, high-voltage diode test specimen
The relation that indirectly connects of each several part is as follows: 7 positive terminals connect inverse current IRM and detect and initialization circuit 5, inverse current IRM detects and initialization circuit 5 connects inverse current detected value and setting current value comparator circuit 4 by signal wire, inverse current detected value is connected VR output control circuit 3 with setting current value comparator circuit 4 by signal wire, VR output control circuit 3 connects VR generator 2 by signal wire, VR generator 2 connects the negative pole end of high-voltage diode 7 by signal wire, high-voltage diode 7 is contained in diode heated at constant temperature temperature system device 6, diode heated at constant temperature temperature system device 6 one end is by signal wire connection control system device 1, control system device 1 connects VR generator 2 and inverse current detected value respectively by two signal wires and sets current value comparator circuit 4.
Claims (4)
1. high-voltage diode excess temperature recovery capability detection method, it is characterized in that by heating to high-voltage diode step by step, by adjusting applying reverse voltage VR on the diode to keep diode applying constant reverse dc IRM, adjust the warm temperature of high-voltage diode step by step simultaneously, until reverse voltage VR is less than specified setting value, automatically record reverse voltage VR simultaneously, temperature value, form the change curve of a reverse voltage and temperature, thus analyze this curve to obtain high-voltage diode excess temperature recovery capability.
2. a high-voltage diode excess temperature recovery capability detection system device, it is characterized in that it comprises control system device, VR generator, VR output control circuit, inverse current detected value and setting current value comparator circuit, inverse current IRM detects and initialization circuit, diode heated at constant temperature temperature system device, high-voltage diode, high-voltage diode positive terminal connects inverse current IRM and detects and initialization circuit, inverse current IRM detects and initialization circuit connects inverse current detected value and setting current value comparator circuit by signal wire, inverse current detected value is connected VR output control circuit with setting current value comparator circuit by signal wire, VR output control circuit connects VR generator by signal wire, VR generator connects the negative pole end of high-voltage diode by signal wire, high-voltage diode is contained in diode heated at constant temperature temperature system device, diode heated at constant temperature temperature system device one end is by signal wire connection control system device, control system device connects VR generator and inverse current detected value respectively by two signal wires and sets current value comparator circuit.
3. a kind of high-voltage diode excess temperature recovery capability detection system device according to claim 2, it is characterized in that the IRM constant control that described control system device is made up of 80C51 series monolithic, VR regulates and temperature, voltage, electric current revelation and display system apparatus.
4. a kind of high-voltage diode excess temperature recovery capability detection system device according to claim 2, is characterized in that described high-voltage diode is high-voltage great-current silicon stack.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510576664.7A CN105093089B (en) | 2015-09-11 | 2015-09-11 | High-voltage diode excess temperature recovery capability detection method and its system and device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510576664.7A CN105093089B (en) | 2015-09-11 | 2015-09-11 | High-voltage diode excess temperature recovery capability detection method and its system and device |
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| Publication Number | Publication Date |
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| CN105093089A true CN105093089A (en) | 2015-11-25 |
| CN105093089B CN105093089B (en) | 2018-02-27 |
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| CN201510576664.7A Active CN105093089B (en) | 2015-09-11 | 2015-09-11 | High-voltage diode excess temperature recovery capability detection method and its system and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107774590A (en) * | 2017-10-31 | 2018-03-09 | 南通皋鑫电子股份有限公司 | A kind of high-voltage diode tube core screening system |
Citations (6)
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| US3914689A (en) * | 1974-05-06 | 1975-10-21 | Charles S Wright | Self powering temperature compensated rectifier for measuring current |
| JPS58182562A (en) * | 1982-04-19 | 1983-10-25 | Kansai Electric Power Co Inc:The | Temperature compensating circuit of light emitting diode for analog measuring light source |
| CN201038745Y (en) * | 2007-04-12 | 2008-03-19 | 无锡博创微电子有限公司 | MOS type overtemperature protection circuit |
| CN102075148A (en) * | 2011-01-13 | 2011-05-25 | 惠州市正源微电子有限公司 | Over-temperature protection circuit for radio frequency power amplifier |
| CN103888055A (en) * | 2014-03-05 | 2014-06-25 | 苏州边枫电子科技有限公司 | Over-temperature state indication type photovoltaic junction box based on thermistor temperature measurement |
| CN204598411U (en) * | 2015-05-13 | 2015-08-26 | 深圳市垅运照明电器有限公司 | A kind of LED drove temperature drop current circuit |
-
2015
- 2015-09-11 CN CN201510576664.7A patent/CN105093089B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3914689A (en) * | 1974-05-06 | 1975-10-21 | Charles S Wright | Self powering temperature compensated rectifier for measuring current |
| JPS58182562A (en) * | 1982-04-19 | 1983-10-25 | Kansai Electric Power Co Inc:The | Temperature compensating circuit of light emitting diode for analog measuring light source |
| CN201038745Y (en) * | 2007-04-12 | 2008-03-19 | 无锡博创微电子有限公司 | MOS type overtemperature protection circuit |
| CN102075148A (en) * | 2011-01-13 | 2011-05-25 | 惠州市正源微电子有限公司 | Over-temperature protection circuit for radio frequency power amplifier |
| CN103888055A (en) * | 2014-03-05 | 2014-06-25 | 苏州边枫电子科技有限公司 | Over-temperature state indication type photovoltaic junction box based on thermistor temperature measurement |
| CN204598411U (en) * | 2015-05-13 | 2015-08-26 | 深圳市垅运照明电器有限公司 | A kind of LED drove temperature drop current circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107774590A (en) * | 2017-10-31 | 2018-03-09 | 南通皋鑫电子股份有限公司 | A kind of high-voltage diode tube core screening system |
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| CN105093089B (en) | 2018-02-27 |
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Effective date of registration: 20210902 Address after: 226503 No. 82, Zhongshan West Road, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Gaoxin Electronics Co.,Ltd. Address before: 226500 No.82, Zhongshan West Road, Rucheng, Rugao, Nantong, Jiangsu Province Patentee before: NANTONG GAOXIN ELECTRONICS Co.,Ltd. |