CN105070643A - Preparation method of amorphous conductive carbon film - Google Patents
Preparation method of amorphous conductive carbon film Download PDFInfo
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- CN105070643A CN105070643A CN201510401734.5A CN201510401734A CN105070643A CN 105070643 A CN105070643 A CN 105070643A CN 201510401734 A CN201510401734 A CN 201510401734A CN 105070643 A CN105070643 A CN 105070643A
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- carbon film
- conductive carbon
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- preparation
- evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
Abstract
The invention discloses a preparation method of an amorphous conductive carbon film. The method includes the steps: a vapor plating instrument is adopted for preparation, fixing a carbon rope to an evaporation source at a room temperature, placing a substrate on a substrate holder and fixing the substrate, adjusting the current of the vapor plating instrument to 40-50A, conducting vapor plating, stopping vapor plating if the carbon rope breaks, cooling, and finally obtaining an amorphous conductive carbon film. The vapor plating instrument is utilized to prepare the amorphous conductive carbon film, no complicated and expensive device is needed, the preparation process is simple, process parameters are easy to control, and the production cost can be greatly reduced. Moreover, amorphous conductive carbon films of good quality can be prepared on different substrates and in different deposition atmospheres.
Description
Technical field
The invention belongs to microelectronic films field of material technology, be specifically related to a kind of preparation method of amorphous conductive carbon film.
Background technology
Along with the development of semi-conductor industry, the size of reduction of device becomes the important and difficult issues that semi-conductor industry continues propelling, and therefore, the nano-electron of further reduction of device size just receives the extensive attention of scientific circles; Material with carbon element as the mainstay material of nanometer electronic device, the excellent performances such as its frequency range, electricity and heat radiation.
At present, Graphene, graphene oxide, carbon nano-tube are common material with carbon elements; Amorphous carbon film is a kind of new carbon prepared for nanometer electronic device, because it has good physics, chemical property and receiving much concern; But in actual production, the preparation of amorphous carbon film exists complex process, technological parameter is wayward, and need in preparation process to use expensive instrument and equipment, the problems such as production cost is high.
Summary of the invention
The object of this invention is to provide a kind of preparation method of amorphous conductive carbon film, solve complex process in existing amorphous carbon film preparation process, technological parameter is wayward, and need to use expensive instrument and equipment, problem that production cost is high.
The technical solution adopted in the present invention is, a kind of preparation method of amorphous conductive carbon film, and adopt evaporation instrument to be prepared, detailed process is:
Step 1, at room temperature, is fixed on evaporation source by carbon rope, is placed on substrate supporting spring by the substrate after cleaning fixing subsequently;
Step 2, opens evaporation instrument power supply, regulates electric current to the 40 ~ 50A of evaporation instrument, carries out evaporation, after carbon fracture of rope, stops evaporation, after cooling, obtains amorphous conductive carbon film.
Feature of the present invention is also,
In step 1, the graphite fibre that carbon rope is 2 millimeters by purity 99%, diameter is made, and carbon rope length is 1 centimetre.
In step 1, substrate is the one in amorphous silicon substrate, Pt electrically-conductive backing plate or FTO electrically-conductive backing plate.
In step 1, the cleaning process of substrate is: substrate is put into acetone ultrasonic cleaning 3 ~ 8min, puts into absolute ethyl alcohol ultrasonic cleaning 3 ~ 8min subsequently, finally uses deionized water rinsing 2 ~ 3 times.
In step 2, evaporation environment is: under air atmosphere condition, and vacuum degree is 1 × 10
-2pa; Or under Ar atmospheric condition, vacuum degree is 5 × 10
-2pa; Or N
2under atmospheric condition, vacuum degree is 5 × 10
-2pa.
The invention has the beneficial effects as follows, utilize evaporation instrument to carry out the preparation of amorphous conductive carbon film, do not need complexity, expensive equipment, and preparation technology is easy, technological parameter is easy to control, and can reduce production cost widely; In addition, the inventive method can prepare the good amorphous conductive carbon film of film quality under different substrates and different deposition atmosphere.
Accompanying drawing explanation
Fig. 1 is the atomic force microscope microscopic appearance figure of the amorphous conductive carbon film that embodiment 1 prepares;
Fig. 2 is the atomic force microscope microscopic appearance figure of the amorphous conductive carbon film that embodiment 2 prepares;
Fig. 3 is the atomic force microscope microscopic appearance figure of the amorphous conductive carbon film that embodiment 3 prepares;
Fig. 4 is the atomic force microscope microscopic appearance figure of the amorphous conductive carbon film that embodiment 4 prepares;
Fig. 5 is the atomic force microscope microscopic appearance figure of the amorphous conductive carbon film that embodiment 5 prepares.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1
Length at room temperature, is that the carbon rope of 1 centimetre is fixed on evaporation source by step 1, is placed on substrate supporting spring by the amorphous silicon substrate after cleaning fixing subsequently; Wherein, the graphite fibre that carbon rope is 2 millimeters by purity 99%, diameter is made; The cleaning process of substrate is: substrate is put into acetone ultrasonic cleaning 3min, puts into absolute ethyl alcohol ultrasonic cleaning 3min subsequently, finally uses deionized water rinsing 2 times.
Step 2, opens evaporation instrument power supply, and regulate the electric current of evaporation instrument to 40A, under air atmosphere condition, vacuum degree is 1 × 10
-2carry out evaporation in the environment of Pa, after carbon fracture of rope, stop evaporation, after cooling, obtain the amorphous conductive carbon film that thickness is 220nm.
As shown in Figure 1, to the present embodiment gained amorphous conductive carbon film atomic force microscope images as can be seen from the figure prepared amorphous carbon-film surface be made up of different particulate of taking measurements greatly, surfacing, and surface quality is higher; The size of particulate is about at 10nm, and height is at about 5nm; Surface Root Mean Square roughness (RMS) through the analytic sample of software is 0.380nm.
Embodiment 2
Length at room temperature, is that the carbon rope of 1 centimetre is fixed on evaporation source by step 1, is placed on substrate supporting spring by the Pt electrically-conductive backing plate after cleaning fixing subsequently; Wherein, the graphite fibre that carbon rope is 2 millimeters by purity 99%, diameter is made; The cleaning process of substrate is: substrate is put into acetone ultrasonic cleaning 5min, puts into absolute ethyl alcohol ultrasonic cleaning 5min subsequently, finally uses deionized water rinsing 3 times.
Step 2, opens evaporation instrument power supply, and regulate the electric current of evaporation instrument to 40A, under air atmosphere condition, vacuum degree is 1 × 10
-2carry out evaporation in the environment of Pa, after carbon fracture of rope, stop evaporation, after cooling, obtain the amorphous conductive carbon film that thickness is 200nm.
As shown in Figure 2, as can be seen from the figure, to the present embodiment gained amorphous conductive carbon film atomic force microscope images prepared amorphous carbon-film surface be made up of different particulate of taking measurements greatly, and surfacing, surface quality is higher.The size of particulate is between 100nm, and height is at about 10nm; The surface Root Mean Square roughness (RMS) of amorphous carbon-film sample is 1.645nm.
Embodiment 3
Length at room temperature, is that the carbon rope of 1 centimetre is fixed on evaporation source by step 1, is placed on substrate supporting spring by the FTO electrically-conductive backing plate after cleaning fixing subsequently; Wherein, the graphite fibre that carbon rope is 2 millimeters by purity 99%, diameter is made; The cleaning process of substrate is: FTO electrically-conductive backing plate is put into acetone ultrasonic cleaning 8min, puts into absolute ethyl alcohol ultrasonic cleaning 8min subsequently, finally uses deionized water rinsing 3 times.
Step 2, opens evaporation instrument power supply, and regulate the electric current of evaporation instrument to 50A, under air atmosphere condition, vacuum degree is 1 × 10
-2carry out evaporation in the environment of Pa, after carbon fracture of rope, stop evaporation, after cooling, obtain the amorphous conductive carbon film that thickness is 210nm.
As shown in Figure 3, as can be seen from the figure, to the present embodiment gained amorphous conductive carbon film atomic force microscope images prepared amorphous carbon-film surface be made up of different particulate of taking measurements greatly, and surfacing, surface quality is higher.The size of particulate is between 200nm, and height is at about 60nm.The surface Root Mean Square roughness (RMS) of amorphous carbon-film sample is 2.213nm.
Embodiment 4
Length at room temperature, is that the carbon rope of 1 centimetre is fixed on evaporation source by step 1, is placed on substrate supporting spring by the amorphous silicon substrate after cleaning fixing subsequently; Wherein, the graphite fibre that carbon rope is 2 millimeters by purity 99%, diameter is made; The cleaning process of substrate is: amorphous silicon substrate is put into acetone ultrasonic cleaning 5min, puts into absolute ethyl alcohol ultrasonic cleaning 5min subsequently, finally uses deionized water rinsing 3 times.
Step 2, opens evaporation instrument power supply, and regulate the electric current of evaporation instrument under 50A, Ar atmospheric condition, vacuum degree is 5 × 10
-2carry out evaporation in Pa environment, after carbon fracture of rope, stop evaporation, after cooling, obtain the amorphous conductive carbon film that thickness is 190nm.
As shown in Figure 4, as can be seen from the figure, to the present embodiment gained amorphous conductive carbon film atomic force microscope images prepared amorphous carbon-film surface be made up of different particulate of taking measurements greatly, and surfacing, surface quality is higher.The size of particulate is at 100nm, and height is at about 10nm.The surface Root Mean Square roughness (RMS) of amorphous carbon-film sample is 1.706nm.
Embodiment 5
Length at room temperature, is that the carbon rope of 1 centimetre is fixed on evaporation source by step 1, is placed on substrate supporting spring by the amorphous silicon substrate after cleaning fixing subsequently; Wherein, the graphite fibre that carbon rope is 2 millimeters by purity 99%, diameter is made; The cleaning process of substrate is: substrate is put into acetone ultrasonic cleaning 4min, puts into absolute ethyl alcohol ultrasonic cleaning 4min subsequently, finally uses deionized water rinsing 2 times.
Step 2, opens evaporation instrument power supply, regulates the electric current of evaporation instrument to 40A, at N
2under atmospheric condition, vacuum degree is 5 × 10
-2carry out evaporation in Pa environment, after carbon fracture of rope, stop evaporation, after cooling, obtain the amorphous conductive carbon film that thickness is 200nm.
As shown in Figure 5, as can be seen from the figure, to the present embodiment gained amorphous conductive carbon film atomic force microscope images prepared amorphous carbon-film surface be made up of different particulate of taking measurements greatly, and surfacing, surface quality is higher.The size of particulate is at about 100nm, and height is at about 50nm.The surface Root Mean Square roughness (RMS) of amorphous carbon-film sample is 1.843nm.
Claims (5)
1. a preparation method for amorphous conductive carbon film, is characterized in that, adopt evaporation instrument to be prepared, detailed process is:
Step 1, at room temperature, is fixed on evaporation source by carbon rope, is placed on substrate supporting spring by the substrate after cleaning fixing subsequently;
Step 2, opens evaporation instrument power supply, regulates electric current to the 40 ~ 50A of evaporation instrument, carries out evaporation, after carbon fracture of rope, stops evaporation, after cooling, obtains amorphous conductive carbon film.
2. the preparation method of a kind of amorphous conductive carbon film according to claim 1, is characterized in that, in step 1, the graphite fibre that carbon rope is 2 millimeters by purity 99%, diameter is made, and carbon rope length is 1 centimetre.
3. the preparation method of a kind of amorphous conductive carbon film according to claim 1, is characterized in that, in step 1, substrate is the one in amorphous silicon substrate, Pt electrically-conductive backing plate or FTO electrically-conductive backing plate.
4. the preparation method of a kind of amorphous conductive carbon film according to claim 1, it is characterized in that, in step 1, the cleaning process of substrate is: substrate is put into acetone ultrasonic cleaning 3 ~ 8min, put into absolute ethyl alcohol ultrasonic cleaning 3 ~ 8min subsequently, finally use deionized water rinsing 2 ~ 3 times.
5. the preparation method of a kind of amorphous conductive carbon film according to claim 1, is characterized in that, in step 2, evaporation environment is: under air atmosphere condition, and vacuum degree is 1 × 10
-2pa; Or under Ar atmospheric condition, vacuum degree is 5 × 10
-2pa; Or N
2under atmospheric condition, vacuum degree is 5 × 10
-2pa.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105714250A (en) * | 2016-02-19 | 2016-06-29 | 西安理工大学 | Preparation method of N-doped amorphous carbon film resistive random access memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299444A (en) * | 2008-07-02 | 2008-11-05 | 哈尔滨工业大学 | Solar battery with semiconductor junction of carbon material and preparation method |
| CN101838791A (en) * | 2010-04-16 | 2010-09-22 | 南京理工大学 | Method for depositing amorphous carbon film by modifying surface of magnesium alloy |
| WO2015072926A1 (en) * | 2013-11-15 | 2015-05-21 | National University Of Singapore | Hot press induced formation of an ordered graphene and few layered graphene sheets |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299444A (en) * | 2008-07-02 | 2008-11-05 | 哈尔滨工业大学 | Solar battery with semiconductor junction of carbon material and preparation method |
| CN101838791A (en) * | 2010-04-16 | 2010-09-22 | 南京理工大学 | Method for depositing amorphous carbon film by modifying surface of magnesium alloy |
| WO2015072926A1 (en) * | 2013-11-15 | 2015-05-21 | National University Of Singapore | Hot press induced formation of an ordered graphene and few layered graphene sheets |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105714250A (en) * | 2016-02-19 | 2016-06-29 | 西安理工大学 | Preparation method of N-doped amorphous carbon film resistive random access memory |
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