CN105068704B - Sense the wire structures of indium tin oxide layer - Google Patents
Sense the wire structures of indium tin oxide layer Download PDFInfo
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- CN105068704B CN105068704B CN201510524549.5A CN201510524549A CN105068704B CN 105068704 B CN105068704 B CN 105068704B CN 201510524549 A CN201510524549 A CN 201510524549A CN 105068704 B CN105068704 B CN 105068704B
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- indium tin
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Abstract
The invention discloses a kind of wire structures for sensing indium tin oxide layer, it includes the multiple sensing indium tin oxide subelements side by side or being arranged in juxtaposition, and each sensing indium tin oxide subelement includes orthogonal first touch-control sensing area and the second touch-control sensing area；The first touch-control sensing area and the second touch-control sensing area include interconnected the first touch-control sensing sub-district and the second touch-control sensing sub-district.The present invention causes the probability of graphical presentation by way of changing rhombus ITO pattern refraction angle to reduce light refraction, while reduces impedance using a large amount of independent ITO blocks enhancing coupled capacitors, can greatly improve signal to noise ratio and the sensitivity vacantly sensed.
Description
Technical field
The present invention relates to touch screen design field, in particular to a kind of wire structures for sensing indium tin oxide layer.
Background technology
Because ITO (Indium tin oxide, indium tin oxide) possesses splendid electric conductivity and the transparency, it is extensive
For being made in the display panels such as liquid crystal panel, touch-screen.
Standard rhombus ITO pattern is a kind of contact panel SensingITO layers (sensing indium tin oxide layer) classical figure
Structure, but its signal to noise ratio is relatively low, suppresses the refraction of some special opticals causes the ability of graphical presentation weaker, in addition, for from
The sensitivity that ground vacantly carries out touch operation is relatively low.
The content of the invention
It is an object of the invention to provide a kind of wire structures for sensing indium tin oxide layer, by changing rhombus ITO figures
The mode at shape refraction angle causes the probability of graphical presentation to reduce light refraction, while using a large amount of independent ITO blocks enhancing couplings
Close electric capacity and reduce impedance, signal to noise ratio and the sensitivity vacantly sensed can be greatly improved.
In order to achieve this, a kind of wire structures of sensing indium tin oxide layer designed by the present invention, including side by side or
The multiple sensing indium tin oxide subelements being arranged in juxtaposition, each sensing indium tin oxide subelement include being mutually perpendicular to
The first touch-control sensing area and the second touch-control sensing area；The first touch-control sensing area and the second touch-control sensing area include mutual
The the first touch-control sensing sub-district and the second touch-control sensing sub-district of connection.
Further, the first touch-control sensing sub-district and the second touch-control sensing sub-district include the 1st to be interconnected
The shape ITO blocks in shape ITO blocks and the 2nd 8.
Further, it is only to include symmetrical first for the first touch-control sensing sub-district and the second touch-control sensing sub-district
Vertical ITO blocks and the second independent ITO blocks.
Further, the described first independent ITO blocks and the second independent ITO blocks include 3 independent triangle ITO
Block and 1 independent rhombus ITO block.
Beneficial effects of the present invention：
The present invention is decomposed basic argyle design, is carried out according to the refractive index difference of glass and air on figure
Corresponding angle processing, to effectively reduce light refraction cause the probability of graphical presentation, improves user and touch screen is drawn
The experience in face is felt；The present invention is reduced the impedance of induction channels, enhanced each using a large amount of independent ITO block designs
Node space coupled capacitor, overall signal to noise ratio is not only increased, also reduce the decay of the lower sensing amount of hanging operation, effectively carry
The touch experience of user is risen.
Brief description of the drawings
Fig. 1 is a kind of wire structures of sensing indium tin oxide layer of the present invention；
Fig. 2 is the embodiment 1 that a kind of wire structures for sensing indium tin oxide layer of the present invention are applied to contact panel；
Fig. 3 is the embodiment 2 that a kind of wire structures for sensing indium tin oxide layer of the present invention are applied to contact panel；
Wherein, 1- sensings indium tin oxide layer, 1.1- sensing indium tin oxide subelements, the first touch-control sensings of 1.2- area,
The second touch-control sensings of 1.3- area, 1.4- the first touch-control sensing sub-districts, 1.5- the second touch-control sensing sub-districts, the side shape ITO of 1.6- the 1st
Block, the side shape ITO blocks of 1.7- the 2nd 8, the independent ITO blocks of 1.8- first, the independent ITO blocks of 1.9- second.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail：
As shown in figure 1, a kind of sensing indium tin oxide layer applied to touch screen disclosed by the invention, it is included side by side
Or the multiple sensing indium tin oxide subelements (1.1) being arranged in juxtaposition, wherein each sensing indium tin oxide subelement (1.1)
Including orthogonal first touch-control sensing area (1.2) and the second touch-control sensing area (1.3)；The first touch-control sensing area
(1.2) and the second touch-control sensing area (1.3) includes the first interconnected touch-control sensing sub-district (1.4) and the second touch-control sensing
Sub-district (1.5), the first touch-control sensing sub-district (1.4) and the second touch-control sensing sub-district (1.5) are symmetrical.
In above-mentioned technical proposal, the first touch-control sensing sub-district (1.4) and the second touch-control sensing sub-district (1.5) include
The shape ITO blocks (1.7) in shape ITO blocks (1.6) and the 2nd 8 of interconnected the 1st, the one 8 side shape ITO blocks
(1.6) and the 2nd 8 side shape ITO blocks (1.7) are symmetrical.
In above-mentioned technical proposal, the first touch-control sensing sub-district (1.4) and the second touch-control sensing sub-district (1.5) include phase
Mutual symmetrical first independent ITO blocks (1.8) and the second independent ITO blocks (1.9), the first independent ITO blocks (1.8) and
Second independent ITO blocks (1.9) are symmetrical.
In above-mentioned technical proposal, the first independent ITO blocks (1.8) and the second independent ITO blocks (1.9) include 3
Individual independent triangle ITO blocks and 1 independent rhombus ITO block.
In above-mentioned technical proposal, the triangle ITO blocks are isosceles triangle ITO blocks.
Such scheme is using a large amount of discrete ITO block structures designs, and compared with overstepping one's bounds upright type of design, such scheme reduces
Impedance simultaneously adds Space Coupling electric capacity, can greatly be applied to the weaker capacitive touch chip of driving force,
Simultaneously reduce attenuation during discharge and recharge, reduce charge differences proximally and distally, the correction to capacitive touch chip
Ability need decreases, and makes the whole face of contact panel more smooth, and operability is more preferable.
In above-mentioned technical proposal, the spacing between each sensing indium tin oxide subelement (1.1) is 4mm-8mm,
Spacing between the internal each ITO blocks of each sensing indium tin oxide subelement (1.1) is 20 μm -400 μm.
Each sensing indium tin oxide subelement (1.1) and each sensing indium tin oxide subelement in above-mentioned technical proposal
(1.1) upper limit of spacing is set according to the upper limit of condenser type driving chip ability progress electric capacity, resistance between internal each ITO blocks
Meter, lower limit is the stable manufacturing limit progress specification for being applied to volume production according to current process processing procedure, so that in the range of meeting and changing
Design can carry out normal operating.
In above-mentioned technical proposal, the emission lines of each sensing indium tin oxide subelement (1.1), the span for receiving line
The width of bridge is 10 μm -300 μm, wherein, reception line refers to 48 side shape ITO blocks in the first touch-control sensing area (1.2), hair
Ray refers to 48 side shape ITO blocks in the second touch-control sensing area (1.3).
Due in touch screen the refractive index of glass cover-plate or glassy layer and air difference cause to offset shadow processing procedure have it is higher
It is required that above-mentioned technical proposal is by the change to figure, according to refractive index relative case under some special total reflection angles
Figure is improved, is allowed to form change, avoids total reflection effect, causes figure to show so as to effectively reduce light refraction
Existing probability, improve experience of the user to touch screen picture and feel.
A kind of embodiment 1 that touch screen is made using above-mentioned sensing indium tin oxide layer, as shown in Fig. 2 the touch screen bag
Glass cover-plate, sensing indium tin oxide layer (1) and driving indium tin oxide layer are included, wherein the top surface patch of driving indium tin oxide layer
Close sensing indium tin oxide layer (1), the top surface fitting glass cover-plate of sensing indium tin oxide layer (1).
A kind of embodiment 2 that touch screen is made using above-mentioned sensing indium tin oxide layer, as shown in figure 3, the touch screen bag
Include glass cover-plate, optical cement layer, sensing indium tin oxide layer (1), driving indium tin oxide layer and glassy layer, wherein glassy layer
Top surface fitting driving indium tin oxide layer, drive indium tin oxide layer top surface be bonded sensing indium tin oxide layer (1), sensing
The top surface fitting optical cement layer of indium tin oxide layer (1), the top surface fitting glass cover-plate of optical cement layer.
The content that this specification is not described in detail belongs to prior art known to professional and technical personnel in the field.
Claims (8)
- A kind of 1. wire structures for sensing indium tin oxide layer, it is characterised in that：It includes the multiple senses side by side or being arranged in juxtaposition Indium tin oxide subelement (1.1) is answered, each sensing indium tin oxide subelement (1.1) includes orthogonal first Touch-control sensing area (1.2) and the second touch-control sensing area (1.3)；The first touch-control sensing area (1.2) and the second touch-control sensing area (1.3) interconnected the first touch-control sensing sub-district (1.4) and the second touch-control sensing sub-district (1.5) are included；It is independent that the first touch-control sensing sub-district (1.4) and the second touch-control sensing sub-district (1.5) include symmetrical first ITO blocks (1.8) and the second independent ITO blocks (1.9)；The first independent ITO blocks (1.8) and the second independent ITO blocks (1.9) include 3 independent triangle ITO blocks With 1 independent rhombus ITO block.
- 2. the wire structures of sensing indium tin oxide layer according to claim 1, it is characterised in that：The first touch-control sense Answer sub-district (1.4) and the second touch-control sensing sub-district (1.5) symmetrical.
- 3. the wire structures of sensing indium tin oxide layer according to claim 2, it is characterised in that：The first touch-control sense Sub-district (1.4) and the second touch-control sensing sub-district (1.5) is answered to include interconnected the one 8 side shape ITO blocks (1.6) and second 8 side shape ITO blocks (1.7).
- 4. the wire structures of sensing indium tin oxide layer according to claim 3, it is characterised in that：The one 8 side shape ITO blocks (1.6) and the 2nd 8 side shape ITO blocks (1.7) are symmetrical.
- 5. the wire structures of sensing indium tin oxide layer according to claim 1, it is characterised in that：Described first is independent ITO blocks (1.8) and the second independent ITO blocks (1.9) are symmetrical.
- 6. the wire structures of sensing indium tin oxide layer according to claim 5, it is characterised in that：The triangle ITO Block is isosceles triangle ITO blocks.
- 7. the wire structures of the sensing indium tin oxide layer according to claim 1~6 any one, it is characterised in that：Institute The spacing stated between each sensing indium tin oxide subelement (1.1) is 4mm-8mm.
- 8. the wire structures of sensing indium tin oxide layer according to claim 7, it is characterised in that：Each sensing indium Spacing between the internal each ITO blocks of tin-oxide subelement (1.1) is 20 μm -400 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510524549.5A CN105068704B (en) | 2015-08-25 | 2015-08-25 | Sense the wire structures of indium tin oxide layer |
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| CN201510524549.5A CN105068704B (en) | 2015-08-25 | 2015-08-25 | Sense the wire structures of indium tin oxide layer |
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| CN105068704B true CN105068704B (en) | 2018-01-30 |
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| CN108089728B (en) * | 2016-11-22 | 2020-11-24 | 中原大学 | Electronic device and triaxial stress sensor thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101126969A (en) * | 2007-10-11 | 2008-02-20 | 友达光电股份有限公司 | Low coupling capacitor condenser type touch control board |
| CN201859425U (en) * | 2010-06-24 | 2011-06-08 | 天马微电子股份有限公司 | Capacitive touch-sensitive electrode area and CTS applying same |
| CN102236467A (en) * | 2010-04-21 | 2011-11-09 | 株式会社日立显示器 | Touch panel and display device |
| CN103246409A (en) * | 2012-02-10 | 2013-08-14 | 东莞万士达液晶显示器有限公司 | Touch panel and touch display device |
-
2015
- 2015-08-25 CN CN201510524549.5A patent/CN105068704B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101126969A (en) * | 2007-10-11 | 2008-02-20 | 友达光电股份有限公司 | Low coupling capacitor condenser type touch control board |
| CN102236467A (en) * | 2010-04-21 | 2011-11-09 | 株式会社日立显示器 | Touch panel and display device |
| CN201859425U (en) * | 2010-06-24 | 2011-06-08 | 天马微电子股份有限公司 | Capacitive touch-sensitive electrode area and CTS applying same |
| CN103246409A (en) * | 2012-02-10 | 2013-08-14 | 东莞万士达液晶显示器有限公司 | Touch panel and touch display device |
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Address after: 430070 Hubei City, Hongshan Province, South Lake Road, No. 53, Hongshan Venture Center, building on the 4 floor, No. Patentee after: Wuhan fine test electronics group Limited by Share Ltd Address before: 430070 Hubei City, Hongshan Province, South Lake Road, No. 53, Hongshan Venture Center, building on the 4 floor, No. Patentee before: Wuhan Jingce Electronic Technology Co., Ltd. |