CN105048786A - Insulated gate bipolar transistor (IGBT) tandem voltage-sharing control method based on field-programmable gate array - Google Patents
Insulated gate bipolar transistor (IGBT) tandem voltage-sharing control method based on field-programmable gate array Download PDFInfo
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Abstract
The IGBT series average-voltage control method based on field programmable gate array that the present invention relates to a kind of,N number of IGBT series connection,The collection emitter-base bandgap grading both ends of each IGBT be sequentially connected static state voltage equipoise bleeder circuit,Differential amplifier circuit,A/D converter circuit,All A/D converter circuit outputs connect FPGA minimum system,FPGA minimum system acquires the collection emitter voltage Zhi amp; lt of each IGBT; i gt; Vce_i lt; /i gt; Main circuit electricity Ya amp; lt; i gt; Vs lt; /i gt; Set voltage transfinite nargin as
, when detecting amp; lt; i gt; i lt; /i gt; The collection She Ji electricity Ya amp; lt of a IGBT; i gt; Vce_i lt; /i gt; More than upper limit value
When, control signal exports high level, until amp; lt; i gt; Vce_i lt; /i gt; Less than lower limit value
, FPGA minimum system output control signal and the switching signal of original power electronic equipment are overlapped mutually the input as each IGBT drive circuit. Collection emitter voltage closed loop feedback control is introduced, software realization presses, reduces the use of analog device, reduce electric energy loss; Control algolithm is simple, enables to control signal snap action on IGBT, is still able to achieve under the conditions of high-frequency work and presses.
Description
Technical field
The present invention relates to a kind of semiconductor control technology, particularly a kind of IGBT series average-voltage control method based on field programmable gate array.
Background technology
The compound full-control type voltage driven type power semiconductor that igbt (InsulatedGateBipolarTransistor, IGBT) is made up of BJT (double pole triode) and MOS (insulating gate type field effect tube).Because IGBT has high input impedance, is easy to advantages such as driving, switching speed is fast, it is made to be widely used in fields such as flexible DC power transmission, new energy power generation grid-connection, island with power.But single IGBT withstand voltage limited (about 6.5kV) commercial at present, can not meet the requirement of above-mentioned high-power occasion, the simplest solution is used multiple IGBT series connection, and each IGBT bears identical magnitude of voltage.The technological difficulties that IGBT directly connects are: due to the difference of IGBT characterisitic parameter and the delay of gate electrode drive signals, the IGBT interrupting process in series valve can be caused inconsistent, and then causing the collection emitter voltage of some IGBT to exceed withstand voltage, this just needs a kind of method that IGBT is reached when switching process all to press.
IGBT series average-voltage comprises static state voltage equipoise and dynamic voltage balancing, and wherein static state voltage equipoise is by solving in IGBT collection emitter-base bandgap grading two ends parallel resistance, and dynamic voltage balancing problem not can solve.Existing dynamic voltage balancing method mainly contains buffer circuit method, Synchronization Control method, gate pole active voltage control methods.
The circuit that buffer circuit method utilizes resistance R, electric capacity C, diode D to form, absorbs the voltage and current peak in IGBT interrupting process, and the method structure is simple, and be easy to realize, but required RCD device voltage grade is high, cost is larger.
Synchronization Control method uses synchrotrans to be coupled by the drive singal of each IGBT, reduces the voltage caused because gate electrode drive signals postpones unbalanced, but does not have effect to the voltage caused due to IGBT characterisitic parameter difference is unbalanced.
Gate pole active voltage control methods is by the input voltage of adjustment gate pole, make the collection emitter voltage of IGBT consistent with the Voltage Reference curve preset, the method closed loop feedback controls to realize all pressing, degree of regulation is high, but the setting reproducibility of Voltage Reference curve is poor, and control algolithm is complicated, time delay is large, haves much room for improvement.
Summary of the invention
The present invention be directed to IGBT series connection and use Pressure and Control Problems existing, propose a kind of IGBT series average-voltage control method based on field programmable gate array, by controlling the output of on-site programmable gate array FPGA, reaching and all pressing object.
Technical scheme of the present invention is: a kind of IGBT series average-voltage control method based on field programmable gate array, N number of IGBT series connection, the collection emitter-base bandgap grading two ends of each IGBT connect static state voltage equipoise bleeder circuit, differential amplifier circuit, A/D convertor circuit successively, all A/D convertor circuits export and connect based on on-site programmable gate array FPGA minimum system, and FPGA minimum system gathers the collection emitter voltage value of each IGBT
vce_i, main circuit voltage
vs, the setting voltage nargin that transfinites is
, when detecting
ithe collection emitter voltage of individual IGBT
vce_iexceed higher limit
time, control signal exports high level, until
vce_ibe less than lower limit
, FPGA minimum system output control signal and the switching signal of original power electronic equipment superpose the input as each IGBT drive circuit mutually, wherein
。
Described static state voltage equipoise bleeder circuit is by the resistance of two series connection
r i1
,
r i2
composition,
i=1,2 ... N, is connected in parallel on the collection emitter-base bandgap grading two ends of each IGBT,
ratio be the ratio of dividing potential drop, the ratio of dividing potential drop is identical, and according to the main circuit voltage that IGBT series valve bears
vswith the maximum input range of AD circuit
adjust, meet
。
Described differential amplifier circuit is amplifier differential amplifier circuit, and amplifier differential amplifier circuit exports
, wherein
for the high level end of amplifier,
for the low level end of amplifier.
Beneficial effect of the present invention is: the IGBT series average-voltage control method that the present invention is based on field programmable gate array, and introduce collection emitter voltage closed loop feedback and control, software simulating is all pressed, and decreases the use of analogue device, reduces electric energy loss; Control algolithm is simple, makes control signal energy snap action on IGBT, still can realize all pressing, better reliability under high-frequency work condition; Equalizer circuit topological structure is simple, is easy to realize, and cost of hardware design is low, and software portability is good, is applicable to the power electronic equipment having arbitrarily IGBT series valve.
Accompanying drawing explanation
Fig. 1 is the IGBT series average-voltage control circuit figure that the present invention is based on field programmable gate array;
Fig. 2 is the software flow pattern of control method of the present invention;
Fig. 3 is three the IGBT comparison of wave shape figure not using method for equalizing voltage in the embodiment of the present invention;
Fig. 4 is three the IGBT comparison of wave shape figure using method for equalizing voltage in the embodiment of the present invention.
Embodiment
The inventive method is realized jointly by hardware components and software section, if Fig. 1 is a kind of IGBT series average-voltage control circuit figure based on field programmable gate array, comprise the static state voltage equipoise circuit, bleeder circuit, differential amplifier circuit, A/D convertor circuit, the FPGA minimum system that connect successively, software section is the control program in FPGA platform.Switching signal in Fig. 1, drive circuit, IGBT are the due basic configuration of original power electronic equipment.Have in Fig. 1
nindividual IGBT series connection, i.e. G
1, G
2g
n.
Static state voltage equipoise circuit is made up of the resistance of two series connection, realizes bleeder circuit function simultaneously, and the ratio that the resistance (being referred to as divider resistance) that wherein resistance is little accounts for series resistance all-in resistance is the step-down ratio of bleeder circuit.
Differential amplifier circuit is made up of a differential amplifier, and the positive input terminal of amplifier connects the high level end of divider resistance by resistance, negative input end connects the low level end of divider resistance by resistance, exports the input of termination A/D convertor circuit.Differential amplifier circuit can eliminate the high common mode value of divider resistance both end voltage.
For meeting the requirement of high-frequency work, described A/D convertor circuit adopts high-speed AD chip, and sample rate is greater than 20MSPS, and precision is not less than 8.FPGA minimum system is sent in the output of A/D convertor circuit, and FPGA adopts AlteraCycloneIVEP4CE6F17C8N chip, and frequency multiplication uses to 100MHz.FPGA is according in series block
nthe collection emitter voltage value of individual IGBT, is exported by software control procedure
nroad control signal, sends into respectively
nthe drive circuit input of individual IGBT, the control signal of FPGA superposes the input as IGBT drive circuit mutually with the switching signal of original power electronic equipment.
Described FPGA control program thinking is:
nindividual IGBT series connection, main circuit voltage
vs, the setting voltage nargin that transfinites is
.When detecting
ithe collection emitter voltage of individual IGBT
vce_iexceed higher limit
time, control signal exports high level, until
vce_ibe less than lower limit
.Wherein:
(1)
(2)
Analyze for the 1st tunnel below, the design on other roads, with the 1st tunnel, namely meets:
(3)
Static state voltage equipoise circuit realizes bleeder circuit function simultaneously, by
r 11with
r 12composition,
ratio be the ratio of dividing potential drop, the every road of this ratio is all identical, needs the main circuit voltage born according to IGBT series valve
vswith the maximum input range of AD circuit
adjust, value principle is:
(4)
Differential amplifier circuit is by resistance
r 13,
r 14,
r 15,
r 16with amplifier composition, the positive input terminal of amplifier is through resistance
r 13with divider resistance
r 12high level end
be connected, negative input end is through resistance
r 14with
r 12low level end
be connected, the feedback resistance of negative input end is
r 15, positive input terminal
r 16one end ground connection, amplifier out connects the input of A/D convertor circuit.Design
r 13=
r 14=
r 15=
r 16, then the output voltage of amplifier:
(5)
Fig. 2 is FPGA control program flow chart, for
road, A/D convertor circuit collects the collection emitter-base bandgap grading both end voltage of IGBT
vce_iafter, the first step, judges whether it is greater than higher limit
if be greater than, then flag bit Flag_
iput 1, otherwise keep initial value 0; Second step, judges Flag_
iwhether be 1, if 1 is carried out the 3rd step, otherwise output low level; 3rd step, judges
vce_iwhether be less than
if be less than, then output low level, otherwise export high level.
For verifying validity of the present invention, build experimental model: main circuit voltage 1500V, 3 IGBT series connection, IGBT switching frequency is 10kHz.Do not add any when all pressing measure 3 IGBT collection emitter voltage waveforms as shown in Figure 3, apply the voltage waveform of 3 IGBT after method for equalizing voltage of the present invention as shown in Figure 4.Fig. 3 and Fig. 4 can prove the validity of IGBT series average-voltage method of the present invention intuitively.
Claims (3)
1. the IGBT series average-voltage control method based on field programmable gate array, it is characterized in that, N number of IGBT series connection, the collection emitter-base bandgap grading two ends of each IGBT connect static state voltage equipoise bleeder circuit, differential amplifier circuit, A/D convertor circuit successively, all A/D convertor circuits export and connect based on on-site programmable gate array FPGA minimum system, and FPGA minimum system gathers the collection emitter voltage value of each IGBT
vce_i, main circuit voltage
vs, the setting voltage nargin that transfinites is
, when detecting
ithe collection emitter voltage of individual IGBT
vce_iexceed higher limit
time, control signal exports high level, until
vce_ibe less than lower limit
, FPGA minimum system output control signal and the switching signal of original power electronic equipment superpose the input as each IGBT drive circuit mutually, wherein
。
2. according to claim 1 based on the IGBT series average-voltage control method of field programmable gate array, it is characterized in that, described static state voltage equipoise bleeder circuit is by the resistance of two series connection
r i1
,
r i2
composition,
i=1,2 ... N, is connected in parallel on the collection emitter-base bandgap grading two ends of each IGBT,
ratio be the ratio of dividing potential drop, the ratio of dividing potential drop is identical, and according to the main circuit voltage that IGBT series valve bears
vswith the maximum input range of AD circuit
adjust, meet
。
3. according to claim 1 or 2 based on the IGBT series average-voltage control method of field programmable gate array, it is characterized in that, described differential amplifier circuit is amplifier differential amplifier circuit, amplifier differential amplifier circuit export
, wherein
for the high level end of amplifier,
for the low level end of amplifier.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510448731.7A CN105048786A (en) | 2015-07-28 | 2015-07-28 | Insulated gate bipolar transistor (IGBT) tandem voltage-sharing control method based on field-programmable gate array |
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|---|---|---|---|
| CN201510448731.7A CN105048786A (en) | 2015-07-28 | 2015-07-28 | Insulated gate bipolar transistor (IGBT) tandem voltage-sharing control method based on field-programmable gate array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108008322A (en) * | 2017-10-27 | 2018-05-08 | 珠海格力节能环保制冷技术研究中心有限公司 | The detection method and circuit of multiple power supplies |
Citations (4)
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|---|---|---|---|---|
| CN102208800A (en) * | 2011-06-09 | 2011-10-05 | 国网电力科学研究院 | Adaptive insulated gate bipolar transistor (IGBT) series-connection voltage-sharing circuit with overcurrent protection function |
| CN102931822A (en) * | 2012-11-16 | 2013-02-13 | 清华大学 | Main circuit pulse based active voltage-equalizing device for high voltage IGBTs (Insulated Gate Bipolar Transistors) in series connection |
| CN103023002A (en) * | 2012-11-22 | 2013-04-03 | 国网智能电网研究院 | Digital IGBT (Insulated Gate Bipolar Transistor) series connection voltage-sharing circuit based on look-up table |
| CN103986308A (en) * | 2014-05-04 | 2014-08-13 | 清华大学 | Dynamic voltage-sharing circuit of direct-current capacitor of multilevel converter |
-
2015
- 2015-07-28 CN CN201510448731.7A patent/CN105048786A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208800A (en) * | 2011-06-09 | 2011-10-05 | 国网电力科学研究院 | Adaptive insulated gate bipolar transistor (IGBT) series-connection voltage-sharing circuit with overcurrent protection function |
| CN102931822A (en) * | 2012-11-16 | 2013-02-13 | 清华大学 | Main circuit pulse based active voltage-equalizing device for high voltage IGBTs (Insulated Gate Bipolar Transistors) in series connection |
| CN103023002A (en) * | 2012-11-22 | 2013-04-03 | 国网智能电网研究院 | Digital IGBT (Insulated Gate Bipolar Transistor) series connection voltage-sharing circuit based on look-up table |
| CN103986308A (en) * | 2014-05-04 | 2014-08-13 | 清华大学 | Dynamic voltage-sharing circuit of direct-current capacitor of multilevel converter |
Non-Patent Citations (1)
| Title |
|---|
| 李勇等: "IGBT串联应用中动态过压的控制", 《华南理工大学学报（自然科学版）》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108008322A (en) * | 2017-10-27 | 2018-05-08 | 珠海格力节能环保制冷技术研究中心有限公司 | The detection method and circuit of multiple power supplies |
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| CB03 | Change of inventor or designer information |
Inventor after: Li Ranyue Inventor after: Wang Chaoli Inventor after: Zhao Dongyuan Inventor after: Wang Gang Inventor after: Song Xiaoming Inventor after: Wang Xue Inventor before: Li Ranyue Inventor before: Wang Chaoli Inventor before: Wang Gang Inventor before: Song Xiaoming Inventor before: Wang Xue |
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Effective date of registration: 20160128 Address after: 200093 Shanghai military road, Yangpu District, No. 516 Applicant after: University of Shanghai for Science and Technology Applicant after: STATE GRID SMART GRID Research Institute Address before: 200093 Shanghai military road, Yangpu District, No. 516 Applicant before: University of Shanghai for Science and Technology |
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Address after: 200093 Shanghai military road, Yangpu District, No. 516 Applicant after: University of Shanghai for Science and Technology Applicant after: GLOBAL ENERGY INTERCONNECTION Research Institute Address before: 200093 Shanghai military road, Yangpu District, No. 516 Applicant before: University of Shanghai for Science and Technology Applicant before: STATE GRID SMART GRID Research Institute |
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Effective date of registration: 20171113 Address after: 200093 Shanghai military road, Yangpu District, No. 516 Applicant after: University of Shanghai for Science and Technology Applicant after: GLOBAL ENERGY INTERCONNECTION Research Institute Applicant after: STATE GRID ZHEJIANG ELECTRIC POWER Co. Address before: 200093 Shanghai military road, Yangpu District, No. 516 Applicant before: University of Shanghai for Science and Technology Applicant before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE |
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Application publication date: 20151111 |