CN105047790A - 一种实用的大功率led封装结构 - Google Patents

一种实用的大功率led封装结构 Download PDF

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CN105047790A
CN105047790A CN201510498407.6A CN201510498407A CN105047790A CN 105047790 A CN105047790 A CN 105047790A CN 201510498407 A CN201510498407 A CN 201510498407A CN 105047790 A CN105047790 A CN 105047790A
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CN105047790B (zh
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何蓓
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JIANGMEN ZHONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种实用的大功率LED封装结构，包括倒装焊芯片、绝缘层、导电基层和光学透镜，可软焊底层上方设置有铜层，所述铜层上方设置有钼层，所述钼层上方设置有所述铜层，所述铜层上方一侧设置有耐高温玻璃，另一侧设置有所述导电基层，所述耐高温玻璃上方一侧设置有导线，另一侧设置有所述倒装焊芯片，所述导线上方设置有低温玻璃陶瓷，所述倒装焊芯片外部设置有所述光学透镜，所述导电基层上方设置有所述绝缘层，所述绝缘层上方设置有所述导线，所述导线上方设置有焊点。产品散热性能好，降低芯片结温，提高LED性能；提高出光效率，优化光束分布；具有较强的可靠性。

Description

一种实用的大功率LED封装结构
技术领域
本发明属于LED封装技术领域，具体涉及一种实用的大功率LED封装结构。
背景技术
随着半导体材料和封装工艺的提高,LED的光通量和出光效率逐渐提高,从而使固体光源成为可能,已广泛应用于交通灯、汽车照明、广告牌等特殊照明领域,并且逐渐向普通照明领域过渡,被公认为有望取代白炽灯、荧光灯的***光源。不同应用领域对LED光源提出更高要求,除了对LED出光效率、光色有不同的要求,而且对出光角度、光强分布有不同的要求。这不但需要上游芯片厂开发新半导体材料,提高芯片制作工艺,设计出满足要求的芯片,而且对下游封装厂提出更高要求,设计出满足一定光强分布的封装结构,提高LED外部的光利用率。LED封装是指发光芯片的封装，相比集成电路封装有较大不同。LED的封装不仅要求能够保护灯芯，而且还要能够透光。所以LED的封装对封装材料有特殊的要求。大功率LED封装由于结构和工艺复杂，并直接影响到LED的使用性能和寿命，一直是近年来的研究热点，特别是大功率白光LED封装更是研究热点中的热点。经过多年的发展，中国LED封装产业已趋于成熟，近几年LED封装企业积极过会上市，在资本市场及下游应用产业持续增长的需求助力下，企业规模扩张速度加快，产能高速增长。但是仍然存在很多问题，技术赶不上发达国家，创新不足，缺少适合大功率LED的产品，不利于产品的对外推广。
发明内容
本发明的目的就在于为了解决上述问题而提供一种实用的大功率LED封装结构。
本发明通过以下技术方案来实现上述目的：
一种实用的大功率LED封装结构，包括倒装焊芯片、绝缘层、导电基层和光学透镜，可软焊底层上方设置有铜层，所述铜层上方设置有钼层，所述钼层上方设置有所述铜层，所述铜层上方一侧设置有耐高温玻璃，另一侧设置有所述导电基层，所述耐高温玻璃上方一侧设置有导线，另一侧设置有所述倒装焊芯片，所述导线上方设置有低温玻璃陶瓷，所述倒装焊芯片外部设置有所述光学透镜，所述导电基层上方设置有所述绝缘层，所述绝缘层上方设置有所述导线，所述导线上方设置有焊点。
作为本发明的优选方案，所述铜层与所述可软焊底层连接，所述钼层夹在上下两个所述铜层之间。
作为本发明的优选方案，所述耐高温玻璃与所述铜层连接，所述导电基层与所述铜层连接。
作为本发明的优选方案，所述导线与所述耐高温玻璃连接，所述低温玻璃陶瓷与所述导线连接。
作为本发明的优选方案，所述绝缘层与所述导电基层连接，所述导线与所述绝缘层连接，所述焊点与所述导线连接。
本发明的有益效果在于：散热性能好，降低芯片结温，提高LED性能；提高出光效率，优化光束分布；具有较强的可靠性。
附图说明
图1是本发明所述一种实用的大功率LED封装结构的结构图。
图中：1、低温玻璃陶瓷；2、耐高温玻璃；3、铜层；4、倒装焊芯片；5、可软焊底层；6、钼层；7、导电基层；8、绝缘层；9、导线；10、焊点；11、光学透镜。
具体实施方式
下面结合附图对本发明作进一步说明：
如图1所示，一种实用的大功率LED封装结构，包括倒装焊芯片4、绝缘层8、导电基层7和光学透镜11，可软焊底层5上方设置有铜层3，铜层3上方设置有钼层6，钼层6用于吸收芯片产生的热量，钼层6上方设置有铜层3，铜层3上方一侧设置有耐高温玻璃2，耐高温玻璃2可以承受LED工作时产生的高温，另一侧设置有导电基层7，导电基层7用于导电，耐高温玻璃2上方一侧设置有导线9，导线9用于导电，另一侧设置有倒装焊芯片4，倒装焊芯片4既是一种芯片互连技术，又是一种理想的芯片粘接技术，导线9上方设置有低温玻璃陶瓷1，倒装焊芯片4外部设置有光学透镜11，光学透镜11可以把LED集成光源配光曲线变成需要的配光曲线，导电基层7上方设置有绝缘层8，绝缘层8是指发热导线之间的绝缘材料层，主要用于隔离电线防止人们触电受伤，绝缘层8上方设置有导线9，导线9上方设置有焊点10。
作为本发明的优选方案，铜层3与可软焊底层5连接，钼层6夹在上下两个铜层3之间，耐高温玻璃2与铜层3连接，导电基层7与铜层3连接，导线9与耐高温玻璃2连接，低温玻璃陶瓷1与导线9连接，绝缘层8与导电基层7连接，导线9与绝缘层8连接，焊点10与导线9连接。
以上显示和描述了本发明的基本原理、主要特征和优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其效物界定。

Claims (5)

1.一种实用的大功率LED封装结构，其特征在于：包括倒装焊芯片（4）、绝缘层（8）、导电基层（7）和光学透镜（11），可软焊底层（5）上方设置有铜层（3），所述铜层（3）上方设置有钼层（6），所述钼层（6）上方设置有所述铜层（3），所述铜层（3）上方一侧设置有耐高温玻璃（2），另一侧设置有所述导电基层（7），所述耐高温玻璃（2）上方一侧设置有导线（9），另一侧设置有所述倒装焊芯片（4），所述导线（9）上方设置有低温玻璃陶瓷（1），所述倒装焊芯片（4）外部设置有所述光学透镜（11），所述导电基层（7）上方设置有所述绝缘层（8），所述绝缘层（8）上方设置有所述导线（9），所述导线（9）上方设置有焊点（10）。
2.根据权利要求1所述的一种实用的大功率LED封装结构，其特征在于：所述铜层（3）与所述可软焊底层（5）连接，所述钼层（6）夹在上下两个所述铜层（3）之间。
3.根据权利要求1所述的一种实用的大功率LED封装结构，其特征在于：所述耐高温玻璃（2）与所述铜层（3）连接，所述导电基层（7）与所述铜层（3）连接。
4.根据权利要求1所述的一种实用的大功率LED封装结构，其特征在于：所述导线（9）与所述耐高温玻璃（2）连接，所述低温玻璃陶瓷（1）与所述导线（9）连接。
5.根据权利要求1所述的一种实用的大功率LED封装结构，其特征在于：所述绝缘层（8）与所述导电基层（7）连接，所述导线（9）与所述绝缘层（8）连接，所述焊点（10）与所述导线（9）连接。
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CN1111567A (zh) * 1993-12-28 1995-11-15 日本电解株式会社 敷铜箔层压板，多层印刷电路板及其处理方法
US5998043A (en) * 1996-02-05 1999-12-07 Sumitomo Electric Industries, Ltd. Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same
CN1707782A (zh) * 2004-06-10 2005-12-14 佶鸿电子股份有限公司 一种散热基板及其制法
CN101418938A (zh) * 2007-10-23 2009-04-29 株式会社日立制作所 光源模块
CN102194968A (zh) * 2010-03-19 2011-09-21 佛山市奇明光电有限公司 发光二极管
CN202018960U (zh) * 2010-12-10 2011-10-26 奉化市匡磊半导体照明有限公司 绝缘底板发光芯片封装结构
CN102412361A (zh) * 2010-09-21 2012-04-11 佳胜科技股份有限公司 层叠散热基板以及使用此层叠散热基板的电子组装结构

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1111567A (zh) * 1993-12-28 1995-11-15 日本电解株式会社 敷铜箔层压板，多层印刷电路板及其处理方法
US5998043A (en) * 1996-02-05 1999-12-07 Sumitomo Electric Industries, Ltd. Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same
CN1707782A (zh) * 2004-06-10 2005-12-14 佶鸿电子股份有限公司 一种散热基板及其制法
CN101418938A (zh) * 2007-10-23 2009-04-29 株式会社日立制作所 光源模块
CN102194968A (zh) * 2010-03-19 2011-09-21 佛山市奇明光电有限公司 发光二极管
CN102412361A (zh) * 2010-09-21 2012-04-11 佳胜科技股份有限公司 层叠散热基板以及使用此层叠散热基板的电子组装结构
CN202018960U (zh) * 2010-12-10 2011-10-26 奉化市匡磊半导体照明有限公司 绝缘底板发光芯片封装结构

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Patentee after: JIANGMEN ZHONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd.

Address before: 241300 room 2018, Tianjing science and technology incubator, Nanling County Economic Development Zone, Wuhu, Anhui

Patentee before: Nanling Wangke Intellectual Property Management Co.,Ltd.

TR01 Transfer of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A Practical Packaging Structure of High Power LED

Effective date of registration: 20221101

Granted publication date: 20180112

Pledgee: Jiangmen Rural Commercial Bank Co.,Ltd. Jianghai central sub branch

Pledgor: JIANGMEN ZHONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd.

Registration number: Y2022980020328