CN105047632A - Minimized high-isolation ceramic packaging structure - Google Patents
Minimized high-isolation ceramic packaging structure Download PDFInfo
- Publication number
- CN105047632A CN105047632A CN201410684903.6A CN201410684903A CN105047632A CN 105047632 A CN105047632 A CN 105047632A CN 201410684903 A CN201410684903 A CN 201410684903A CN 105047632 A CN105047632 A CN 105047632A
- Authority
- CN
- China
- Prior art keywords
- bonding
- layer
- isolation
- refers
- track
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a minimized high-isolation ceramic packaging structure including a pipe case (a), a chip (b), a metal cover plate (c) and a bonding wire (d); the pipe case (a) is composed of a ceramic layer (a1), a metallization layer (a2) and an interconnection blind hole (a3); the metallization layer (a2) is composed of a bonding finger layer (a21), a sealing area (a22), a connection area (a23), a bonding chip area (a24) and a printed circuit board trace layer (a25); the pipe case(a) is provided in the center thereof with the bonding chip area (a24) for displacing the chip, and the circumference of the bonding chip area (a24) is provided with the bonding finger layer (a21) which includes a grounding bonding finger (a211) and a signal bonding finger (a212). The structure herein has the beneficial effects that stratum isolation technology is adopted, and space stereo-wrapping is conducted on the high-isolation bonding finger, and a space "sandwich" structure is formed; the structure can markedly reduce cross talk and coupling effect of the signal channels, reduce signal loss, increase isolation level, and reduce impact of packaging on the electrical property of the products, provided that the high reliability of the packaging is guaranteed by the structure.
Description
Technical field
The present invention relates to integrated circuit ceramic packaging technology field, particularly a kind of miniaturized high-isolation ceramic packaging structure.
Background technology
Along with integrated circuit frequency is more and more higher, encapsulate the impact of product electrical property increasing; The parasitic parameter of encapsulation, not only have impact on the electrical property of radio frequency IO, also can affect the work closing on IO; Along with the continuation in rear mole of epoch develops, integrated circuit profile is more and more less, which increases the design difficulty of high-frequency integrated circuit ceramic cartridge.
Traditional ceramics shell, from top the end of to, is followed successively by finalization area, ceramic layer, bonding refers to layer, ceramic layer, bonding pad.This layout not radio frequency IO carries out isolation processing, will have a strong impact on the electrical property of radio frequency IO.In recent years, also having colleague to improve traditional ceramics shell, what refer to layer at its bonding respectively adds metallic spacer up and down, but this slightly increases isolation.Along with the increase of transmission frequency, loss of signal is serious all the more.Because bonding refers to that wiring space is limited, usually also not radio frequency bonding fingering row left and right isolation processing, and between transmission channel, there is higher crosstalk and coupling effect, this will increase the loss of signal, cause isolation low.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of miniaturized high-isolation ceramic packaging structure is provided, under the prerequisite ensureing high reliability, significantly improve the isolation of encapsulating structure, reduce the impact of encapsulation on properties of product.
The object of the invention is to be achieved through the following technical solutions: a kind of miniaturized high-isolation ceramic packaging structure, comprises shell, chip, metal cover board and bonding wire; Described shell is made up of ceramic layer, metal layer and interconnected blind holes; By bonding, described metal layer refers to that floor, seal area, bonding pad, Nian Xin district and track floor form; Described shell central authorities are provided with the Nian Xin district of chip placement; Nian Xin district surrounding is provided with bonding and refers to floor, and described bonding refers to that layer comprises ground connection bonding and refers to refer to signal bonding, and described ground connection bonding refers to be connected with track floor, seal area and Nian Xin district by interconnected blind holes, and described signal bonding refers to be connected with bonding pad.
Described metal layer district take tungsten as matrix, and first nickel plating is gold-plated again in exposed metal layer region, and its gross thickness is 90 ~ 250 microns.
Described bonding pad is exit pad, can be directly welded on pcb board.
Described shell is followed successively by seal area from top to bottom, the first ceramic layer, the first track layer, the second ceramic layer, bonding refer to layer, the 3rd ceramic layer, the second track layer, the 4th ceramic layer and bonding pad.
Described signal bonding refers to that comprising high-isolation bonding refers to, high-isolation bonding refers to that the right and left arranges ground connection bonding and refers to, ground connection bonding refers to that wrapping up high-isolation bonding in the horizontal direction refers to, forms left and right " sandwich " structure; Described ground connection bonding refers to be connected with the second track layer by interconnected blind holes.
With bonding, described Nian Xin district can refer to that floor is in same plane, also can be in same plane with the second track layer.
The first described track layer is connected with the second track layer by interconnected blind holes; The area of the first track layer and the second track layer is enough large simultaneously, wraps up bonding completely refer to layer at vertical direction, forms " sandwich " structure up and down.
According to a kind of preferred version of a kind of miniaturized high-isolation ceramic packaging structure of the present invention, the first described track layer and bonding refer to the distance of layer, bonding refers to that the distance of layer and the second track layer is 0.2 ~ 0.5 millimeter.
According to a kind of preferred version of a kind of miniaturized high-isolation ceramic packaging structure of the present invention, described high-isolation bonding finger widths is 60 ~ 180 microns; The central axis that each bonding refers to is parallel to each other, and the spacing of each central axis is 180 ~ 500 microns.
The beneficial effect of technical solution of the present invention: the present invention adopts formation isolation technology, to high-isolation bonding fingering row space solid parcel, form space " sandwich " structure, this can under the prerequisite ensureing encapsulation high reliability, the crosstalk of remarkable reduction signalling channel and coupling effect, reduce loss of signal, improve isolation, reduce the impact of encapsulation on product electrical property.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the second track Rotating fields schematic diagram;
Fig. 3 is left and right " sandwich " structural representation;
Fig. 4 is the high-isolation ceramic packaging structure schematic diagram of embodiment two and four;
Fig. 5 is left and right " sandwich " structural representation of embodiment three and four;
Fig. 6 is bonding pad structural representation;
Fig. 7 is the isolation effect comparison diagram of three kinds of encapsulating structures;
In figure, a-shell, b-chip, c-metal cover board, d-bonding wire, a1-ceramic layer, a2-metal layer, a3-interconnected blind holes, a11-first ceramic layer, a12-second ceramic layer, a13-the 3rd ceramic layer, a14-the 4th ceramic layer, a21-bonding refer to floor, a22-seal area, a23-bonding pad, a24-Nian Xin district, a25-track floor, a251-first track floor, a252-second track floor, a211-ground connection bonding refers to, a212-signal bonding refers to, a2121-high-isolation bonding refers to.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
Embodiment one
:as shown in Figure 1, a kind of miniaturized high-isolation ceramic packaging structure comprises shell a, chip b, metal cover board c and bonding wire d; Shell a is made up of ceramic layer a1, metal layer a2 and interconnected blind holes a3; By bonding, described metal layer a2 refers to that floor a21, seal area a22, bonding pad a23, Nian Xin district a24 and track floor a25 form; Described shell a central authorities are provided with the Nian Xin district a24 of chip placement b; A24 surrounding in Nian Xin district is provided with bonding and refers to floor a21; Described bonding refers to that a layer a21 comprises ground connection bonding and refer to that a211 and signal bonding refer to a212, and described ground connection bonding refers to that a211 is connected with track floor a25, seal area a22 and Nian Xin district a24 by interconnected blind holes a3, and described signal bonding refers to that a212 is connected with bonding pad a23.
Described metal layer district a2 take tungsten as matrix, and gold-plated again in the first nickel plating of exposed metallized area, and its gross thickness is 90 ~ 250 microns.
Described bonding pad a23 is exit pad, can be directly welded on pcb board.
Described shell a from top to bottom, is followed successively by seal area a22, the first ceramic layer a11, the first track layer a251, the second ceramic layer a12, bonding refers to a layer a21, the 3rd ceramic layer a13, the second track layer a252, the 4th ceramic layer a14, bonding pad a23.
Described Nian Xin district a24 and bonding refer to that floor a21 is in same plane.
As shown in Figure 1 and Figure 2, the first track layer a251 is connected with the second track layer a252 by interconnected blind holes a3; First track layer a251 and the second track layer a252 area are enough large simultaneously, wrap up bonding completely refer to a layer a21 at vertical direction, form " sandwich " structure up and down.For obtaining premium properties, bonding refers to layer a21 and the first track layer a251, the distance of the second track layer a252 is 0.2 ~ 0.5 millimeter.
As shown in Figure 3, high-isolation bonding refers to that a2121 the right and left arranges ground connection bonding and refers to a211, and ground connection bonding refers to that a211 wraps up high-isolation bonding in the horizontal direction and refers to a2121, forms left and right " sandwich " structure; Ground connection bonding refers to that a211 is connected with the second track layer a252 by interconnected blind holes a3.As shown in Figure 6, signal bonding refers to that a212 is interconnected by the semicircle orifice at shell a edge and bonding pad a23, realizes being electrically connected.High-isolation bonding refers to that a2121 width is 60 ~ 180 microns, and the central axis that each bonding refers to should be parallel to each other, and the spacing of each central axis is 180 ~ 500 microns, is beneficial to technique and realizes and obtain premium properties.
Embodiment two: as shown in Figure 4, is with the difference of embodiment one: Nian Xin district a24 and the second track floor a252 is in same layer.Compared with embodiment one, it is advantageous that and can reduce shell a thickness, but the Mechanical Reliability of shell a can be reduced simultaneously.Therefore this kind of form, it is less to be mainly used in shell a profile, and the occasion higher to shell a thickness requirement.
Embodiment three: as shown in Figure 5, is with the difference of embodiment one: signal bonding refers to that a212 is interconnected by interconnected blind holes a3 and bonding pad a23, realizes being electrically connected.Compared with embodiment one, because shell a edge is without semicircle orifice, under the prerequisite ensureing shell a reliability, the profile of shell a can be reduced further, realize the miniaturization of encapsulation.But need reduce the impact of interconnected blind holes a3 on shell a mechanical performance as far as possible, punch position moves in needing, this refers to the length of arrangement wire of layer a21 by shortening bonding, increases wiring difficulty.Therefore this kind of form, it is not high to be mainly used in insulated degree requirement, and the occasion higher to shell a profile size requirements.
Embodiment four: as shown in Figure 4, Figure 5, is with the difference of embodiment one: Nian Xin district a24 and the second track floor a252 is in same layer, and meanwhile, signal bonding refers to that a212 is interconnected by interconnected blind holes a3 and bonding pad a23, realizes being electrically connected.Compared with embodiment one, it is advantageous that and can reduce shell thickness, and reduce shell profile size; But can reduce the Mechanical Reliability of shell, therefore this kind of form, it is not high to be mainly used in insulated degree requirement simultaneously, and the occasion higher to shell a profile size requirements.
Embodiment five: utilize the simulation software HFSS of ANSYS company of the U.S. to analyze the CLCC24 shell model that lead-in wire pitch is 0.5mm.As shown in Figure 7, the curve that in figure, M1 and M4 identifies is traditional C LCC24 shell simulation result; The curve that in figure, M2 and M5 identifies is the CLCC24 shell simulation result adopting " sandwich " structure up and down; The curve that in figure, M3 and M6 identifies is the CLCC24 shell simulation result simultaneously adopting " sandwich " structure and left and right " sandwich " structure up and down.Simulation result according to Fig. 7 can be found out: when frequency is 5GHz, and the shell of " sandwich " structure is than traditional shell up and down, and isolation improves-4dB; Adopt the shell of " sandwich " structure and left and right " sandwich " structure up and down than the shell only adopting " sandwich " structure up and down, isolation improves-6.5dB simultaneously; When frequency is 10GHz, the shell of " sandwich " structure is than traditional shell up and down, and isolation improves-3dB; Adopt the shell of " sandwich " structure and left and right " sandwich " structure up and down than the shell only adopting " sandwich " structure up and down, isolation improves-6.9dB simultaneously; And along with the increase of frequency, " sandwich " structure reduces the isolation effect that crucial bonding refers to up and down, and adopts " sandwich " structure and left and right " sandwich " structure up and down to stablize the isolation effect that crucial bonding refers to simultaneously.Implement by above embodiment, the coupling effect of transmission channel can be effectively reduced, reduce loss of signal, improve isolation.
Claims (10)
1. a miniaturized high-isolation ceramic packaging structure, is characterized in that: it comprises shell (a), chip (b), metal cover board (c) and bonding wire (d); Described shell (a) is made up of ceramic layer (a1), metal layer (a2) and interconnected blind holes (a3); By bonding, described metal layer (a2) refers to that floor (a21), seal area (a22), bonding pad (a23), Nian Xin district (a24) and track floor (a25) form; Described shell (a) central authorities are provided with the Nian Xin district (a24) of chip placement, Nian Xin district (a24) surrounding is provided with bonding and refers to floor (a21), described bonding refers to that layer (a21) comprises ground connection bonding and refers to that (a211) and signal bonding refer to (a212), described ground connection bonding refers to that (a211) is connected with track floor (a25), seal area (a22) and Nian Xin district (a24) by interconnected blind holes (a3), and described signal bonding refers to that (a212) is connected with bonding pad (a23).
2. the miniaturized high-isolation ceramic packaging structure of one according to claim 1, it is characterized in that: described metal layer (a2) take tungsten as matrix, and first nickel plating is gold-plated again in exposed metal layer region, its gross thickness is 90 ~ 250 microns.
3. the miniaturized high-isolation ceramic packaging structure of one according to claim 1, is characterized in that: described bonding pad (a23) is exit pad, can be directly welded on pcb board.
4. the miniaturized high-isolation ceramic packaging structure of one according to claim 1, it is characterized in that: described shell (a) from top to bottom, is followed successively by seal area (a22), the first ceramic layer (a11), the first track layer (a251), the second ceramic layer (a12), bonding refer to layer (a21), the 3rd ceramic layer (a13), the second track layer (a252), the 4th ceramic layer (a14), bonding pad (a23).
5. the miniaturized high-isolation ceramic packaging structure of one according to claim 1, it is characterized in that: described signal bonding refers to that (a212) comprises high-isolation bonding and refer to (a2121), described high-isolation bonding refers to that (a2121) the right and left is provided with ground connection bonding and refers to (a211), ground connection bonding refers to that (a211) wraps up high-isolation bonding in the horizontal direction and refer to (a2121), forms left and right " sandwich " structure; Described ground connection bonding refers to that (a211) is connected with the second track layer (a252) by interconnected blind holes (a3).
6. the miniaturized high-isolation ceramic packaging structure of one according to claim 1, is characterized in that: described Nian Xin district (a24) and bonding refer to that floor (a21) is in same plane.
7. the miniaturized high-isolation ceramic packaging structure of one according to claim 1, is characterized in that: described Nian Xin district (a24) and the second track floor (a252) are in same plane.
8. the miniaturized high-isolation ceramic packaging structure of one according to claim 4, is characterized in that: the first described track layer (a251) is connected with the second track layer (a252) by interconnected blind holes (a3); First track layer (a251) and the second track layer (a252) area are enough large simultaneously, wrap up bonding completely refer to layer (a21) at vertical direction, form " sandwich " structure up and down.
9. the miniaturized high-isolation ceramic packaging structure of one according to claim 1, is characterized in that: described bonding refers to that layer (a21) is 0.2 ~ 0.5 millimeter with the distance of the first track layer (a251), the second track layer (a252).
10. the miniaturized high-isolation ceramic packaging structure of one according to claim 5, it is characterized in that: described high-isolation bonding refers to that (a2121) width is 60 ~ 180 microns, the central axis that each bonding refers to is parallel to each other, and the spacing of each central axis is 180 ~ 500 microns.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410684903.6A CN105047632B (en) | 2014-11-25 | 2014-11-25 | One kind miniaturization high-isolation ceramic packaging structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410684903.6A CN105047632B (en) | 2014-11-25 | 2014-11-25 | One kind miniaturization high-isolation ceramic packaging structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105047632A true CN105047632A (en) | 2015-11-11 |
CN105047632B CN105047632B (en) | 2017-07-28 |
Family
ID=54454057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410684903.6A Active CN105047632B (en) | 2014-11-25 | 2014-11-25 | One kind miniaturization high-isolation ceramic packaging structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105047632B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111599789A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging structure |
CN112133687A (en) * | 2020-10-12 | 2020-12-25 | 成都振芯科技股份有限公司 | Multichannel DDS chip substrate packaging structure and method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972253A (en) * | 1988-06-27 | 1990-11-20 | Digital Equipment Corporation | Programmable ceramic high performance custom package |
JP3406845B2 (en) * | 1998-08-31 | 2003-05-19 | 京セラ株式会社 | Surface mount type crystal oscillator |
JP2003298462A (en) * | 2002-04-01 | 2003-10-17 | Ngk Spark Plug Co Ltd | Ceramic board for branching filter device |
US20060284300A1 (en) * | 2004-02-09 | 2006-12-21 | Murata Manufacturing Co., Ltd. | Module with built-in component and method for manufacturing module |
CN101714543A (en) * | 2009-11-12 | 2010-05-26 | 美新半导体(无锡)有限公司 | Ceramic substrate for three-dimensional packaging of multi-chip system and packaging method thereof |
US20120267671A1 (en) * | 2011-04-20 | 2012-10-25 | Jung Jung Su | Light emitting device package including uv light emitting diode |
CN103426830A (en) * | 2013-07-15 | 2013-12-04 | 中国电子科技集团公司第五十五研究所 | Flip-chip-bonded surface-mount shell structure based on low temperature co-fired ceramics |
CN204204841U (en) * | 2014-11-25 | 2015-03-11 | 成都振芯科技股份有限公司 | A kind of miniaturized high-isolation ceramic packaging structure |
-
2014
- 2014-11-25 CN CN201410684903.6A patent/CN105047632B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972253A (en) * | 1988-06-27 | 1990-11-20 | Digital Equipment Corporation | Programmable ceramic high performance custom package |
JP3406845B2 (en) * | 1998-08-31 | 2003-05-19 | 京セラ株式会社 | Surface mount type crystal oscillator |
JP2003298462A (en) * | 2002-04-01 | 2003-10-17 | Ngk Spark Plug Co Ltd | Ceramic board for branching filter device |
US20060284300A1 (en) * | 2004-02-09 | 2006-12-21 | Murata Manufacturing Co., Ltd. | Module with built-in component and method for manufacturing module |
CN1906759A (en) * | 2004-02-09 | 2007-01-31 | 株式会社村田制作所 | Module with built-in component and method for manufacturing module |
CN101714543A (en) * | 2009-11-12 | 2010-05-26 | 美新半导体(无锡)有限公司 | Ceramic substrate for three-dimensional packaging of multi-chip system and packaging method thereof |
US20120267671A1 (en) * | 2011-04-20 | 2012-10-25 | Jung Jung Su | Light emitting device package including uv light emitting diode |
CN103426830A (en) * | 2013-07-15 | 2013-12-04 | 中国电子科技集团公司第五十五研究所 | Flip-chip-bonded surface-mount shell structure based on low temperature co-fired ceramics |
CN204204841U (en) * | 2014-11-25 | 2015-03-11 | 成都振芯科技股份有限公司 | A kind of miniaturized high-isolation ceramic packaging structure |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111599789A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging structure |
CN112133687A (en) * | 2020-10-12 | 2020-12-25 | 成都振芯科技股份有限公司 | Multichannel DDS chip substrate packaging structure and method |
CN112133687B (en) * | 2020-10-12 | 2023-02-21 | 成都振芯科技股份有限公司 | Multichannel DDS chip substrate packaging structure and method |
Also Published As
Publication number | Publication date |
---|---|
CN105047632B (en) | 2017-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7120295B2 (en) | high frequency module | |
US9006098B2 (en) | Impedance controlled electrical interconnection employing meta-materials | |
US10242957B2 (en) | Compartment shielding in flip-chip (FC) module | |
CN103996670B (en) | Semiconductor device | |
US10674648B2 (en) | High-frequency module | |
CN108258424B (en) | Mobile terminal antenna and feed network thereof | |
CN108701681A (en) | Shield the integrated antenna package and and its manufacturing method of EMI | |
EP3780259B1 (en) | Transition structure and multilayer transition structure for millimeter wave | |
CN104051434B (en) | Packaging structure for integrating VCO and waveguide antenna | |
CN103137609A (en) | Integrated circuit package structure with electromagnetic shielding structure | |
US20190259692A1 (en) | Parallel seam welding leadless ceramic package | |
CN106298708A (en) | Packaging structure and three-dimensional packaging structure | |
CN103943573A (en) | Novel integrated circuit internal packaging method | |
CN101728369B (en) | Method for packing surface-mountable integrated circuit | |
CN204204841U (en) | A kind of miniaturized high-isolation ceramic packaging structure | |
CN105047632A (en) | Minimized high-isolation ceramic packaging structure | |
CN103426869B (en) | Package on package and manufacture method thereof | |
CN106104911A (en) | High-frequency package | |
Li et al. | Analysis of wideband multilayer LTCC vertical via transition for millimeter-wave System-in-package | |
CN103426844B (en) | Broadband full-sealed package of microwave devices | |
JP2005056961A (en) | Interposer | |
JP7010372B2 (en) | High frequency module | |
JP5361024B2 (en) | Wiring board | |
JP2014082094A (en) | Connector | |
CN112151468B (en) | Antenna packaging module and antenna packaging process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |