CN105047582A - Substrate treatment device - Google Patents
Substrate treatment device Download PDFInfo
- Publication number
- CN105047582A CN105047582A CN201510186031.5A CN201510186031A CN105047582A CN 105047582 A CN105047582 A CN 105047582A CN 201510186031 A CN201510186031 A CN 201510186031A CN 105047582 A CN105047582 A CN 105047582A
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- Prior art keywords
- wafer
- substrate
- transducer
- cleaning
- placing table
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 238000004140 cleaning Methods 0.000 claims abstract description 119
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 238000000227 grinding Methods 0.000 claims description 77
- 238000001035 drying Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 111
- 230000007246 mechanism Effects 0.000 description 30
- 238000010926 purge Methods 0.000 description 11
- 239000007788 liquid Substances 0.000 description 10
- 239000012530 fluid Substances 0.000 description 7
- 230000033001 locomotion Effects 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 101000873785 Homo sapiens mRNA-decapping enzyme 1A Proteins 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 102100035856 mRNA-decapping enzyme 1A Human genes 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013316 zoning Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Automation & Control Theory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
A substrate treatment device which can detect a metal film remaining as a residue on a polished surface of a substrate after polishing with high accuracy is provided. The substrate treatment device includes a polishing section (3) that polishes a surface to be polished of the substrate to remove the metal film formed on the surface to be polished, a cleaning section (4) that cleans and dries the substrate polished by the polishing section 3, and a temporary table (180) on which the substrate is temporarily placed after being polished by the polishing section (3). Sensors (8, 9) for detecting the metal film remaining on the polished surface of the substrate are provided at the temporary table (180).
Description
Technical field
The substrate board treatment that the residue that the present invention relates to a kind of metal film to residuing on the surface (polished face) of the substrate after grinding detects.
Background technology
Know that existing substrate board treatment has: grind section, the substrates such as semiconductor crystal wafer have been ground and removes the metal film be formed on substrate; And cleaning part, cleaning-drying is carried out to the substrate ground by grind section.Such as cmp (CMP) is carried out by grind section, grinding pad be pasted onto the surface of grinding table and form abradant surface, it is made to contact by being pressed on this abradant surface in the polished face of the substrates such as the semiconductor crystal wafer kept by grinding head (substrate holding mechanism), by while slip is supplied abradant surface, while the relative motion in the abradant surface utilizing the rotation of grinding table and the rotation of grinding head to produce and polished face, face grinding will be polished smooth.
Like this, adopt the words of CMP device, although can be removed the metal film of remaining film forming on substrate by grinding, in the situations such as the action of generating means is bad, metal film is not sometimes removed clean and stays on the surface of substrate after grinding (polished face) as residue and residual.Therefore, in the past, propose sensor head setting (burying underground) in grinding table, in grinding wafer process, sensor head is rotated together with grinding table, crosses the surface of wafer, while obtain the device (reference example is as patent documentation 1) of thickness data.
Prior art document
Patent documentation
Patent documentation 1 Japanese Unexamined Patent Publication 2013-222856 publication
Summary of the invention
The problem that invention will solve
But, existing device can only obtain the thickness data (not being wafer entirety but the thickness data of a part) when sensor head is come below wafer, again due to while rotate together with grinding table while obtain thickness data, thus the certainty of measurement of thickness has the limit.
The present invention makes just in view of the above problems, object be to provide a kind of can detect grinding accurately after substrate polished face on the substrate board treatment of metal film that remains as residue.
For solving the means of problem
Substrate board treatment of the present invention comprises: grind section, and it grinds the polished face of substrate and removes the metal film be formed on polished face; Cleaning part, it carries out cleaning-drying to the substrate after being ground by grind section; Temporary placing table, it is the described substrate of interim placement after described substrate is by grind section grinding, wherein, on temporary placing table, is provided with the transducer that metal film residual on the polished face to substrate detects.
According to this structure, the temporary placing table temporarily placing substrate is after grinding provided with transducer.Therefore, the transducer be located on temporary placing table can be utilized to detect the metal film that the polished face of the substrate be positioned on temporary placing table remains as residue.In this case, compared with being provided with the situation of (burying underground) transducer in grinding table as prior art, the metal film in the polished face of the substrate after grinding can be detected accurately.
Again, in substrate board treatment of the present invention, also can be located between grind section and cleaning part by temporary placing table, the substrate after being ground by grind section was placed on temporary placing table before being cleaned by cleaning part temporarily.
According to this structure, the temporary placing table between grind section and cleaning part is provided with transducer.Therefore, before the substrate that can be ground by grind section is cleaned by cleaning part, utilize the transducer be located on temporary placing table to detect the metal film in the polished face of the substrate be placed on temporary placing table accurately.
Again, in substrate board treatment of the present invention, transducer also can be configured to can detect the metal film in the whole polished face of the substrate be placed on temporary placing table.
According to this structure, the transducer be located on temporary placing table can be utilized to detect the metal film in the whole polished face of the substrate be placed on temporary placing table.Therefore, with as prior art can only detect compared with the residue of the metal film of the part in the polished face of substrate with the transducer be embedded on grinding table, the metal film in the whole polished face of substrate can be detected accurately.
Again, in substrate board treatment of the present invention, transducer also can be eddy current type transducer.
According to this structure, eddy current type transducer can be used, detect the residue of the metal film remained on the polished face of substrate accurately.
Again, in substrate board treatment of the present invention, transducer also can be infrared laser formula transducer.
According to this structure, can infrared laser formula transducer be used, detect the residue of the metal film remained on the polished face of substrate accurately.
Again, in substrate board treatment of the present invention, transducer also can be infrared camera formula transducer.
According to this structure, can infrared camera formula transducer be used, detect the residue of the metal film remained on the polished face of substrate accurately.
The effect of invention
According to the present invention, the metal film that the polished face of the substrate after grinding remains as residue can be detected accurately.
Accompanying drawing explanation
Fig. 1 is the integrally-built vertical view of the substrate board treatment illustrated in embodiments of the present invention.
Fig. 2 is the stereogram of the structure of the pendulum conveyer illustrated in embodiments of the present invention.
(a) of Fig. 3 is the vertical view of the cleaning part illustrated in embodiments of the present invention; B () is the end view of the cleaning part illustrated in embodiments of the present invention.
Fig. 4 is the schematic diagram of an example of the cleaning line illustrated in embodiments of the present invention.
Fig. 5 is the schematic diagram of an example of the cleaning line illustrated in embodiments of the present invention.
Fig. 6 is the schematic diagram of an example of the cleaning line illustrated in embodiments of the present invention.
Fig. 7 is the figure of an example of the transducer illustrated in embodiments of the present invention.
Fig. 8 is the figure of an example of the transducer illustrated in embodiments of the present invention.
Embodiment
Below, be described with the substrate board treatment of accompanying drawing to embodiments of the present invention.In the present embodiment, exemplify by cmp (CMP) the situation of the substrate board treatment that substrate grinds.
Fig. 1 is the integrally-built vertical view that the substrate board treatment relating to one embodiment of the present invention is shown.As shown in Figure 1, this substrate board treatment comprises the shell 1 of substantially rectangular shape, and the inside of shell 1 becomes loading/unloading section 2, grind section 3 and cleaning part 4 by partition 1a, 1b zoning.These loading/unloading section 2, grind section 3 and cleaning part 4 can separately be assembled.Again, substrate board treatment has the control part 5 controlled processing substrate action.
Loading/unloading section 2 comprises the front loading part 20 of more than 2 (in present embodiment being 4) of the wafer cassette being placed with the many wafers of storage (substrate).These front loading parts 20 configure with shell 1 is adjacent, and arrange along the Width (direction vertical with length direction) of substrate board treatment.Open wafer cassette, SMIF (StandardManufacturingInterface: SMIF) wafer cassette or FOUP (FrontOpeningUnifiedPod: front open type wafer box) can be carried in front loading part 20.Here, SMIF, FOUP are can by wafer cassette is stored in inside, cover with partition, keep the airtight container with space outerpace independently environment.
Again, in loading/unloading section 2, erection has the traveling mechanism 21 of the arrangement along front loading part 20, and travel mechanism 21 is provided with can along 2 transfer robots (loading machine) 22 of the orientation movement of wafer cassette.Transfer robot 22 by moving in travel mechanism 21, and can arrive the wafer cassette be mounted on front loading part 20.Each transfer robot 22 possesses upper and lower two hands, uses the hand of upside when being put back in wafer cassette by the wafer processed, and use the hand of downside when being taken out from wafer cassette by wafer before treatment, upper assistant can use respectively.And the hand on the downside of transfer robot 22 is configured to by rotating around its axle center, to make wafer overturn.
Loading/unloading section 2 is owing to being the region being necessary to keep the most clean state, and thus the inside of loading/unloading section 2 maintains often than any one the high pressure in the outside of substrate board treatment, grind section 3 and cleaning part 4.Grind section 3 owing to adopting slip as lapping liquid, because of but the dirtiest region.Therefore, the inside of grind section 3 is formed with negative pressure, and this pressure is maintained lower than the internal pressure of cleaning part 4.Loading/unloading section 2 is provided with filter fan unit (not shown), this filter fan unit has the clean air filters such as HEPA filter, ulpa filter or chemical filter, often blows out the clean air eliminating particle or noxious vapors, toxic gas from this filter fan unit.
Grind section 3 is the regions of carrying out grinding wafer (planarization), comprises the 1st grinding unit 3A, the 2nd grinding unit 3B, the 3rd grinding unit 3C and the 4th grinding unit 3D.As shown in Figure 1, the length direction along substrate board treatment arranges for these the 1st grinding unit 3A, the 2nd grinding unit 3B, the 3rd grinding unit 3C and the 4th grinding unit 3D.In this grind section 3, carry out the surface (polished face) of grinding crystal wafer to remove the process of the metal film be formed on polished face.
As shown in Figure 1, the 1st grinding unit 3A comprises: grinding table 30A, and it is provided with grinding pad 10, and grinding pad 10 has abradant surface; Collar 31A, for keep wafer and by wafer by the grinding pad 10 be pressed on grinding table 30A while grind; Lapping liquid supply nozzle 32A, for supplying lapping liquid or finishing liquid (such as, pure water) to grinding pad 10; Trimmer 33A, for repairing the abradant surface of grinding pad 10; Sprayer 34A, nebulizes the fluid-mixing of liquid (such as pure water) and gas (such as nitrogen) or liquid (such as pure water) and is ejected on abradant surface.
Similarly, the 2nd grinding unit 3B comprises: the grinding table 30B being provided with grinding pad 10; Collar 31B; Lapping liquid supply nozzle 32B; Trimmer 33B; And sprayer 34B.Again, the 3rd grinding unit 3C comprises: the grinding table 30C being provided with grinding pad 10; Collar 31C; Lapping liquid supply nozzle 32C; Trimmer 33C; And sprayer 34C.Again, the 4th grinding unit 3D comprises: the grinding table 30D being provided with grinding pad 10; Collar 31D; Lapping liquid supply nozzle 32D; Trimmer 33D; And sprayer 34D.
Secondly, to for carrying the conveying mechanism of wafer to be described.As shown in Figure 1, be adjacent to be configured with the 1st linear conveyor 6 with the 1st grinding unit 3A and the 2nd grinding unit 3B.1st linear conveyor 6 is the mechanisms carrying wafer between four transfer positions (being followed successively by the 1st transfer position TP1, the 2nd transfer position TP2, the 3rd transfer position TP3 and the 4th transfer position TP4 from loading/unloading section side) of the orientation along grinding unit 3A, 3B.
Again, be adjacent to be configured with the 2nd linear conveyor 7 with the 3rd grinding unit 3C and the 4th grinding unit 3D.2nd linear conveyor 7 is the mechanisms carrying wafer between three transfer positions (being followed successively by the 5th transfer position TP5, the 6th transfer position TP6 and the 7th transfer position TP7 from loading/unloading section side) of the orientation along grinding unit 3C, 3D.
Wafer is transported to grinding unit 3A, 3B by the 1st linear conveyor 6.As mentioned above, the collar 31A of the 1st grinding unit 3A is moved between abrasion site and the 2nd transfer position TP2 by the wobbling action of collar head.Therefore, wafer is transferred to collar 31A and carries out at the 2nd transfer position TP2.Similarly, the collar 31B of the 2nd grinding unit 3B moves between abrasion site and the 3rd transfer position TP3, and wafer is transferred to collar 31B to carry out at the 3rd transfer position TP3.The collar 31C of the 3rd grinding unit 3C moves between abrasion site and the 6th transfer position TP6, and wafer is transferred to collar 31C to carry out at the 6th transfer position TP6.The collar 31D of the 4th grinding unit 3D moves between abrasion site and the 7th transfer position TP7, and wafer is transferred to collar 31D to carry out at the 7th transfer position TP7.
1st transfer position TP1 is configured with the lifter 11 for accepting wafer from transfer robot 22.Wafer gives the 1st linear conveyor 6 by this lifter 11 from transfer robot 22.Gate (not shown) between lifter 11 and transfer robot 22, and is arranged on partition 1a, and when carrying wafer, gate is opened, and wafer gives lifter 11 from transfer robot 22.Again, between the 1st linear conveyor 6, the 2nd linear conveyor 7 and cleaning part 4, pendulum conveyer 12 is configured with.This pendulum conveyer 12 has can the hand of movement between the 4th transfer position TP4 and the 5th transfer position TP5, utilizes pendulum conveyer 12 to carry out from the 1st linear conveyor 6 to the handing-over of the wafer of the 2nd linear conveyor 7.Wafer is transported to the 3rd grinding unit 3C and/or the 4th grinding unit 3D by the 2nd linear conveyor 7.Again, the wafer after being ground by grind section 3 is transported to cleaning part 4 via pendulum conveyer 12.
Fig. 2 is the stereogram of the structure that pendulum conveyer 12 is shown.Pendulum conveyer 12 is arranged on the framework 160 of substrate board treatment, comprises; The linear guides 161 extended in the vertical direction; Be arranged on the swing mechanism 162 on linear guides 161; As the lift drive mechanism 165 making swing mechanism 162 drive source of movement in the vertical direction.As this lift drive mechanism 165, the electric cylinder etc. with servo motor and ball-screw can be adopted.Swing mechanism 162 is linked with switching mechanism 167 by swing arm 166.And switching mechanism 167 is linked with the handle sturcture 170 held wafer W.In the side of pendulum conveyer 12, be configured with the temporary placing table 180 of the wafer W be arranged on not shown framework.As shown in Figure 1, this temporary placing table 180 is located between grind section 3 and cleaning part 4.Temporary placing table 180 is placed through temporarily the wafer W after grind section 3 grinding.Such as, the wafer W after being ground by grind section 3, before utilizing cleaning part 4 cleaning, is placed on temporary placing table 180 temporarily.In this case, temporary placing table 180 and the 1st linear conveyor 6 are adjacent to configure, between the 1st linear conveyor 6 and cleaning part 4.
Swing arm 166 utilizes the driving of motor not shown in swing mechanism 162 to carry out cycle centered by the rotating shaft of this motor.Thus, switching mechanism 167 and handle sturcture 170 rotary motion integratedly, handle sturcture 170 moves between the 4th transfer position TP4, the 5th transfer position TP5 and temporary placing table 180.
Handle sturcture 170 has a pair control arm 171 held wafer W.At the two ends of each control arm 171, be provided with the chuck 172 that the outer peripheral edges of wafer W are held.These chucks 172 are arranged to give prominence to downwards from the two ends of control arm 171.And, handle sturcture 170 comprise make a pair control arm 171 near and the switching mechanism 173 that moves up away from the side of wafer W.
When holding wafer W, under the state opening control arm 171, till the chuck 172 utilizing lift drive mechanism 165 to make handle sturcture 170 drop to control arm 171 is positioned at same plane with wafer W.Further, driven opening/closing mechanism 173 makes control arm 171 move towards direction close to each other, the outer peripheral edges of wafer W is held with the chuck 172 of control arm 171.In this state, lift drive mechanism 165 is utilized to make control arm 171 increase.
Switching mechanism 167 has the rotating shaft 168 being linked to handle sturcture 170; With the motor (not shown) making this rotating shaft 168 rotate.By utilizing motor to make rotating shaft 168 drive, its entirety of handle sturcture 170 will revolve turnback, and the wafer W that handle sturcture 170 holds thus will overturn.Like this, because handle sturcture 170 entirety is overturn by switching mechanism 167, the wafer carried out between handle sturcture and switching mechanism handing-over necessary in prior art thus can be omitted.In addition, when wafer W is transported to the 5th transfer position TP5 from the 4th transfer position TP4, switching mechanism 167 does not carry out wafer W upset, and carries wafer W with polished facing to the state of below.On the other hand, when wafer W is transported to temporary placing table 180 from the 4th transfer position TP4 or the 5th transfer position TP5, utilize switching mechanism 167 make wafer W overturn with make to be polished facing to top.
Temporary placing table 180 has; Bedplate 181; Be fixed on many (in Fig. 2 being 2) vertical rods 182 of the upper surface of this bedplate 181; Be fixed on the horizon bar 183 of 1 font of falling L of the upper surface of bedplate 181.Horizon bar 183 has the vertical component effect 183a of the upper surface being connected to bedplate 181; With the horizontal part 183b flatly extended from the upper end of this vertical component effect 183a to handle sturcture 170.The upper surface of horizontal part 183b is provided with multiple (in Fig. 2 the being 2) pin 184 for supporting wafer W.The upper end of vertical rod 182 is also respectively equipped with the pin 184 supported wafer W.The top of these pins 184 is located in the same horizontal plane.Horizon bar 183 is configured in than the position of vertical rod 182 closer to the center (i.e. the rotating shaft of the motor of swing mechanism 162) in rotary moving of wafer W.
The handle sturcture 170 utilizing switching mechanism 167 to be reversed is to hold the state of wafer W, enter the gap between the horizontal part 183b of horizon bar 183 and bedplate 181, when all pins 184 are positioned at the below of wafer W, the rotation of the handle sturcture 170 produced by swing mechanism 162 will stop.By opening control arm 171 in this case, wafer W is placed on temporary placing table 180.The wafer W be positioned on temporary placing table 180 is transported to cleaning part 4 by transfer robot that is described below, cleaning part 4.
(a) of Fig. 3 is the vertical view that cleaning part 4 is shown; (b) of Fig. 3 is the end view that cleaning part 4 is shown.At this cleaning part 4, carry out the process to the wafer W cleaning-drying utilizing grind section 3 to grind.As shown in (a) of Fig. 3 and (b) of Fig. 3, cleaning part 4 is become the 1st purge chamber 190, the 1st conveying chamber 191, the 2nd purge chamber 192, the 2nd conveying chamber 193 and hothouse 194 by zoning.One time, the upside cleaning module 201A and one time, downside cleaning module 201B that longitudinally arrange is configured with in 1st purge chamber 190.One time, upside cleaning module 201A is configured in the top of the cleaning module 201B in downside.Similarly, the upside secondary cleaning module 202A longitudinally arranged and downside secondary cleaning module 202B is configured with in the 2nd purge chamber 192.Upside secondary cleaning module 202A is configured in the top of downside secondary cleaning module 202B.Once and secondary cleaning module 201A, 201B, 202A, 202B be cleaning machine wafer cleaned with cleaning fluid.These once and secondary cleaning module 201A, 201B, 202A, 202B be because vertically arrange, so can obtain the less advantage of occupied area.
Between upside secondary cleaning module 202A and downside secondary cleaning module 202B, be provided with the temporary placing table 203 of wafer.The upside irradiation modules 205A and downside irradiation modules 205B that longitudinally arrange is configured with in hothouse 194.On the upside of these, irradiation modules 205A and downside irradiation modules 205B is mutually isolated.On the top of upside irradiation modules 205A and downside irradiation modules 205B, be provided with the filter fan unit 207,207 supplied respectively by clean air in irradiation modules 205A, 205B.Cleaning module 201A, one time, downside cleaning module 201B, upside secondary cleaning module 202A, downside secondary cleaning module 202B, temporary placing table 203, a upside irradiation modules 205A and downside irradiation modules 205B are fixed on not shown framework by bolt etc. in upside.
1st conveying chamber 191 is configured with the 1st transfer robot 209 moving up and down; 2nd conveying chamber 193 is configured with the 2nd transfer robot 210 moving up and down.1st transfer robot 209 and the 2nd transfer robot 210 are moved respectively and are bearing in freely on the bolster 211,212 of longitudinal extension.1st transfer robot 209 and the 2nd transfer robot 210 have the driving mechanisms such as motor therein, and along bolster 211,212 move up and down freely.1st transfer robot 209, in the same manner as transfer robot 22, has the hand of upper and lower two layers.As shown in the dotted line of (a) of Fig. 3, the 1st transfer robot 209 hand be configured on the downside of it can arrive the position of above-mentioned temporary placing table 180.When hand in the downside of the 1st transfer robot 209 arrives temporary placing table 180, the gate (not shown) be located on partition 1b will be opened.
1st transfer robot 209 action is with at temporary placing table 180, one time, upside cleaning module 201A, one time, downside cleaning module 201B, temporary placing table 203, carry wafer W between upside secondary cleaning module 202A, downside secondary cleaning module 202B.During wafer (being attached with the wafer of slip) before transport cleaning, the 1st transfer robot 209 hand of downside; During wafer after transport cleaning, with the hand of upside.2nd transfer robot 210 action is with at upside secondary cleaning module 202A, downside secondary cleaning module 202B, temporary placing table 203, carry wafer W between upside irradiation modules 205A, downside irradiation modules 205B.The wafer that 2nd transfer robot 210 is crossed because of a transport cleaning, so only possess 1 hand.Wafer takes out from upside irradiation modules 205A or downside irradiation modules 205B by the hand of the transfer robot 22 shown in Fig. 1 on the upside of it, and this wafer is put back to wafer cassette.When the upside hand of transfer robot 22 arrives irradiation modules 205A, 205B, the gate (not shown) be located on partition 1a will be opened.
Because cleaning part 4 possesses 2 cleaning modules and 2 secondary cleaning modules, so the many cleaning lines cleaned side by side by multiple wafer can be formed." cleaning line " refers to: in the inside of cleaning part 4, the mobile route of 1 piece of wafer when being cleaned by multiple cleaning module.As shown in Figure 4, such as, can by 1 piece of wafer by the 1st transfer robot 209, the cleaning module 201A in upside, 1st transfer robot 209, upside secondary cleaning module 202A, 2nd transfer robot 210, and the order of upside irradiation modules 205A carries out carrying (with reference to cleaning line 1), therewith side by side, by another block wafer by the 1st transfer robot 209, the cleaning module 201B in downside, 1st transfer robot 209, downside secondary cleaning module 202B, 2nd transfer robot 210, and the order of downside irradiation modules 205B carries out carrying (with reference to cleaning line 2).Utilize such 2 cleaning lines arranged side by side, can almost side by side to clean polylith (typically being 2 pieces) wafer and dry.
Again, in 2 cleaning lines arranged side by side, official hour difference also can be established to clean polylith wafer and dry.As follows with the advantage that official hour difference carries out cleaning: the 1st transfer robot 209 and the 2nd transfer robot 210 are by many articles of cleaning line dual-purposes.For this reason, when multiple cleaning or dry process terminate simultaneously, these transfer robots cannot carry wafer then and there, cause throughput degradation.In order to avoid this problem, by cleaning and drying polylith wafer with official hour difference, by transfer robot 209,210, processed wafer promptly can be carried.
Ground wafer is attached with slip, and it is bad for being placed for a long time by wafer in this condition.This is because the copper as distribution metal is sometimes by cause that slip corrodes.Adopt this cleaning part 4, because be provided with 2 cleaning modules, even if when wafer is above by some cleaned in one time, upside cleaning module 201A or one time, downside cleaning module 201B, also wafer can also be moved into another cleaning module and clean it.Therefore, can not only high-throughput be realized, and can clean to the wafer after grinding the corrosion preventing copper immediately.
Again, when only needing once to clean, as shown in Figure 5, the order of wafer by the 1st transfer robot 209, one time, upside cleaning module 201A, the 1st transfer robot 209, temporary placing table 203, the 2nd transfer robot 210 and upside irradiation modules 205A can be carried, the secondary cleaning in the 2nd purge chamber 192 can be omitted in.And, such as, as shown in Figure 6, when downside secondary cleaning module 202B breaks down, wafer can be delivered to upside secondary cleaning module 202A.Like this, utilize the 1st transfer robot 209 and the 2nd transfer robot 210, as required wafer can be distributed to the cleaning line of regulation.The selected of this cleaning line is determined by control part 5.
Each cleaning module 201A, 201B, 202A and 202B have the detector (not shown) detected fault.When cleaning module 201A, 201B, 202A and 202B some breaks down, it can detect and send signal to control part 5 by detector.The selected cleaning line avoiding the cleaning module broken down of control part 5, and current cleaning line is switched to by the cleaning line again selected.In addition, in the present embodiment, although be provided with 2 cleaning modules and 2 secondary cleaning modules, the present invention is not limited thereto, a cleaning module and/or secondary cleaning module also can be set as more than 3.
Again, also temporary placing table can be located at the 1st purge chamber 190.Such as, in the same manner as temporary placing table 203, temporary placing table can be arranged between the cleaning module 201A and one time, downside cleaning module 201B of upside.When certain cleaning module breaks down, 2 pieces of wafers can be delivered to the temporary placing table in temporary placing table 180 ((a) with reference to Fig. 3) and the 1st purge chamber 190.
The concentration of the cleaning fluid that concentration also can be different from secondary cleaning module 202A, 202B uses of the cleaning fluid that cleaning module 201A, a 201B use.Such as, the concentration of the cleaning fluid that the concentration of the cleaning fluid that cleaning module 201A, a 201B can be made to use uses higher than secondary cleaning module 202A, 202B.Usually, think that the concentration of cleaning performance and cleaning fluid and scavenging period are roughly directly proportional.Therefore, by the cleaning fluid adopting concentration higher in once cleaning, even if when wafer is very dirty, the time of time and the secondary cleaning of once cleaning also can be made roughly equal.
Then, be described with reference to the feature structure of Fig. 8 to the substrate board treatment of present embodiment.In the substrate board treatment of present embodiment, temporary placing table 180 is provided with the transducer that surface (polished face) the residual metal film to wafer W detects.
Fig. 7 is the figure of an example of the transducer illustrated in present embodiment.As shown in Figure 7, transducer 8 is configured to the whole surface of the wafer that temporary placing table 180 is placed (polished face) to cover, and is configured to the metal film that can detect whole polished face.Again, as shown in Figure 8, also strip type sensor 9 can be adopted.In this case, transducer 9 is configured to utilize robot (not shown) upper mobile on the whole surface (polished face) of wafer.Transducer 7,8 is such as eddy current type transducer.Again, as transducer, infrared laser formula transducer or infrared camera formula transducer also can be adopted.
And, by the result that surface (polished face) the residual metal film of transducer 7,8 couples of wafer W detects, when detecting abnormal (such as, when the fiducial value that the Thickness Ratio of the metal film be detected specifies is large etc.), the identification information being detected abnormal wafer W is sent to control part 5, this wafer is made no longer to enter next procedure (such as, extracted by this wafer and carry out waste disposal) after cleaning, drying process.Again, when detecting abnormal, in order to prevent secondary impaired, carry out the disposal stopping next block wafer W being delivered to grinding table 30A ~ D.
According to the substrate board treatment of such present embodiment, the temporary placing table 180 temporarily placing wafer W is after grinding provided with transducer 7,8.Therefore, the transducer 7,8 be located on temporary placing table 180 can be utilized to detect to stay as residue and residual the metal film on the surface (polished face) of the wafer W that temporary placing table 180 is placed.In this case, with as prior art arranging (burying underground) in grinding table and have compared with the situation of transducer, the metal film on the surface (polished face) of the wafer W after grinding can be detected accurately.
Again, in the present embodiment, the temporary placing table 180 between grind section 3 and cleaning part 4 is provided with transducer 7,8.Therefore, before the wafer W ground by grind section 3 is cleaned by cleaning part 4, the transducer 7,8 be located on temporary placing table 180 can be utilized to detect the metal film (as the metal film that residue is residual) in the polished face of the wafer W that temporary placing table 180 is placed accurately.
Again, in the present embodiment, the transducer 7,8 be located on temporary placing table 180 can be utilized to detect the metal film in the whole polished face of the wafer W that temporary placing table 180 is placed.Therefore, and can only detect compared with the residue of the metal film of the part in the polished face of wafer W with the transducer being embedded in grinding table as prior art, the residue of the metal film on the whole polished face of wafer W can be detected accurately.
Such as, transducer 7,8 is eddy current type transducers.In this case, eddy current type transducer can be adopted, detect the residue of metal film residual on the polished face of wafer W accurately.Again, transducer 7,8 also can be infrared laser formula transducer or infrared camera formula transducer.In this case, infrared laser formula transducer or infrared camera formula transducer can be adopted, detect the residue of metal film residual on the polished face of wafer W accurately.
Above, by illustrating, embodiments of the present invention are illustrated, but scope of the present invention is not limited thereto, and can, in the scope described in claim, carry out changing/being out of shape according to object.
Utilizability in industry
Industrial utilizability
As mentioned above, substrate board treatment involved in the present invention has this effect of metal film that can detect accurately and stay as residue and residual on the polished face of substrate after grinding, being used as cmp (CMP) device etc., is useful.
Symbol description
1 shell
2 loading/unloading section
3 grind section
3A the 1st grinding unit
3B the 2nd grinding unit
3C the 3rd grinding unit
3D the 4th grinding unit
4 cleaning parts
5 control parts
6 the 1st linear conveyors
7 the 2nd linear conveyors
8 transducers
9 transducers
10 grinding pads
11 lifters
12 pendulum conveyers
Loading part before 20
21 travel mechanisms
22 transfer robots (loading machine)
30A ~ 30D grinding table
31A ~ 31D collar
32A ~ 32D lapping liquid supply nozzle
33A ~ 33D trimmer
34A ~ 34D sprayer
TP1 the 1st transfer position
TP2 the 2nd transfer position
TP3 the 3rd transfer position
TP4 the 4th transfer position
TP5 the 5th transfer position
TP6 the 6th transfer position
TP7 the 7th transfer position
180 temporary placing table
190 the 1st purge chambers
191 the 2nd purge chambers
192 the 3rd purge chambers
193 the 4th purge chambers
203 temporary placing table.
Claims (6)
1. a substrate board treatment, is characterized in that, comprising:
Grind section, it grinds the polished face of substrate and removes the metal film be formed on described polished face;
Cleaning part, it carries out cleaning-drying to by the described substrate after described grind section grinding; And
Temporary placing table, it is the described substrate of interim placement after described substrate is by described grind section grinding,
On described temporary placing table, be provided with the transducer that metal film residual on the polished face to described substrate detects.
2. substrate board treatment according to claim 1, is characterized in that,
Described temporary placing table is arranged between described grind section and described cleaning part,
Be placed on described temporary placing table before being cleaned by described cleaning part by the described substrate after described grind section grinding temporarily.
3. according to substrate board treatment according to claim 1 or claim 2, it is characterized in that, described transducer is configured to detect the metal film in the whole polished face of the described substrate that described temporary placing table is placed.
4. the substrate board treatment according to any one in claim 1 to claim 3, is characterized in that, described transducer is eddy current type transducer.
5. the substrate board treatment according to any one in claim 1 to claim 3, is characterized in that, described transducer is infrared laser formula transducer.
6. the substrate board treatment according to any one in claim 1 to claim 3, is characterized in that, described transducer is infrared camera formula transducer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-086177 | 2014-04-18 | ||
| JP2014086177A JP2015205359A (en) | 2014-04-18 | 2014-04-18 | Substrate treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105047582A true CN105047582A (en) | 2015-11-11 |
Family
ID=54321213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510186031.5A Pending CN105047582A (en) | 2014-04-18 | 2015-04-17 | Substrate treatment device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20150298283A1 (en) |
| JP (1) | JP2015205359A (en) |
| KR (1) | KR20150120869A (en) |
| CN (1) | CN105047582A (en) |
| TW (1) | TW201601875A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018050069A1 (en) * | 2016-09-14 | 2018-03-22 | 清华大学 | Chemical mechanical polishing system |
| CN110461542A (en) * | 2017-03-22 | 2019-11-15 | 株式会社荏原制作所 | The grinding device and grinding method of substrate |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017108113A (en) * | 2015-11-27 | 2017-06-15 | 株式会社荏原製作所 | Substrate processing apparatus, substrate processing method, and control program of substrate processing apparatus |
| JP6577385B2 (en) * | 2016-02-12 | 2019-09-18 | 株式会社荏原製作所 | Substrate holding module, substrate processing apparatus, and substrate processing method |
| DE102018007463B4 (en) * | 2018-09-04 | 2022-01-05 | Schneider Gmbh & Co. Kg | Device and method for lens processing and processing device for lenses |
-
2014
- 2014-04-18 JP JP2014086177A patent/JP2015205359A/en active Pending
-
2015
- 2015-04-10 TW TW104111568A patent/TW201601875A/en unknown
- 2015-04-15 KR KR1020150052900A patent/KR20150120869A/en unknown
- 2015-04-17 CN CN201510186031.5A patent/CN105047582A/en active Pending
- 2015-04-17 US US14/690,306 patent/US20150298283A1/en not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018050069A1 (en) * | 2016-09-14 | 2018-03-22 | 清华大学 | Chemical mechanical polishing system |
| CN108698193A (en) * | 2016-09-14 | 2018-10-23 | 清华大学 | Chemical-mechanical polishing system |
| CN110461542A (en) * | 2017-03-22 | 2019-11-15 | 株式会社荏原制作所 | The grinding device and grinding method of substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015205359A (en) | 2015-11-19 |
| KR20150120869A (en) | 2015-10-28 |
| TW201601875A (en) | 2016-01-16 |
| US20150298283A1 (en) | 2015-10-22 |
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