CN105047248A - Chip stacking interconnected material containing Lu and carbon nano tube - Google Patents
Chip stacking interconnected material containing Lu and carbon nano tube Download PDFInfo
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- CN105047248A CN105047248A CN201510477481.XA CN201510477481A CN105047248A CN 105047248 A CN105047248 A CN 105047248A CN 201510477481 A CN201510477481 A CN 201510477481A CN 105047248 A CN105047248 A CN 105047248A
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Abstract
The invention discloses a chip stacking interconnected material containing Lu and a carbon nano tube, and belongs to the field of the chip interconnected material. The content of the rare earth element Lu of the interconnected material is 0.01-0.5%; the content of the carbon nano tube is 0.05-5%; the remained material is In. Firstly, the In-Lu master alloy powder is prepared by using a mechanical lapping method; the In-Lu powder, the In powder, mixed rosin resins, thixotropic agents, stabilizing agents, active assistant agents and active agents are completely stirred; at last, the carbon nano tube is added; all materials are completely stirred to prepare the paste interconnected material containing the Lu and the carbon nano tube; salient points are prepared on the chip surface by using a spray printing technology, so that the chips in the three-dimensional space can be vertically interconnected to form high-strength interconnected welding sports under the condition that the certain pressure is 1-10MPa and the temperature is 170-260 DEG C. The interconnected material is high in reliability and used for three-dimensionally sealing the chip stacking.
Description
Technical field
The present invention relates to a kind of chip-stacked interconnection material containing Lu, carbon nano-tube, belong to chip interconnect materials field.This interconnection material is mainly used in the field of three-dimension packaging high reliability demand, is that one has high performance novel interconnect material.
Background technology
In the electronics industry, Moore's Law is considered to guide the developing direction of electronics technologies always, but seems to make Moore's Law be difficult to continue to use along with the increase day by day of one chip integrated level.And the appearance of three-dimensional packaging technology, then the out-of-service time of Moore's Law can be made significantly to postpone, mole epoch after from then on entering.Three-dimension packaging can realize the double action reducing chip volume and promote data transmission bauds.
For three-dimension packaging structure, mainly realize its specific function by the stacking of chip, first need Chip Vertical stacking realization interconnection bonding.Therefore the reliability of solder joint of interconnecting also directly determines the performance of whole three-dimension packaging structure, realizes electrical connection effect.In the chip-stacked bonding structure of three-dimension packaging, interconnection solder joint is hundreds of, and namely the inefficacy of single solder joint can cause the forfeiture of integrally-built function.Further, three-dimension packaging structure is comparatively complicated, and the single solder joint failure of electronic device unlike two dimension encapsulation can be repaired by detection and remelting, and therefore three-dimensional structure interconnection solder joint requires to have higher reliability.
The stacking bonding of three-dimension packaging fabric chip, mainly by under certain temperature and pressure condition, low melting material can be made to melt, and between materials with high melting point, form solid-liquid counterdiffusion system, compound between single refractory metal is formed within the regular hour, general higher than low melting material about 300 DEG C, therefore can ensure when carrying out secondary chip bonding, the intermetallic compound solder joint of ground floor chip surface can not melt, and keep the stability of solder joint tissue, thus intermetallic compound solder joint can bear repeatedly bonding and the flip chip bonding in later stage of chip in-service.
Intermetallic compound has himself shortcoming: (1) is formed in intermetallic compound process in the counterdiffusion of solid-liquid element, can along with generation volume contraction, occur obvious cavitation in intermetallic compound interface region, cavity can become solder joint crack initiation source; (2) for three-dimension packaging structure, in-service because the change of temperature cycling load of alternation and the mismatch of linear expansion coefficient, intermetallic compound solder joint easily becomes area of stress concentration, fatigue failure will occur when stress focuses on to a certain degree solder joint.Because two above shortcomings cause intermetallic compound solder joint to become three-dimension packaging structure link the weakest.Therefore the important topic that intermetallic compound welding spot reliability becomes Electronic Packaging field how is improved.Significantly improving of three-dimension packaging structural reliability can be realized by studying novel interconnection material, but lack relevant report for the research international community of this aspect at present.
Summary of the invention
The invention provides a kind of chip-stacked interconnection material containing Lu, carbon nano-tube, utilize rare earth element Lu, carbon nano-tube and In three's coupling, high strength solder joint can be built by three-dimension packaging bonding, three-dimension packaging reliability of structure can be significantly improved.There is high useful life during one's term of military service, the high reliability demand of energy meeting requirements on three-dimensional encapsulating structure device.
The present invention realizes with following technical scheme: a kind of chip-stacked interconnection material containing Lu, carbon nano-tube, its composition and mass percent are: rare earth element Lu content is 0.01 ~ 0.5%, and carbon nano-tube is 0.05 ~ 5%, and all the other are In.
The present invention can adopt the customary preparation methods producing composite material to obtain.
The method that the present invention preferably adopts is: first adopt mechanical lapping to prepare In-Lu intermediate alloy powder, secondly mixing In-Lu powder, In powder, mixed rosin resin, thixotropic agent, stabilizer, active adjuvant and activating agent also fully stir, finally add carbon nano-tube, fully stir the interconnection material prepared paste and contain Lu and carbon nano-tube.
Use the interconnection material prepared paste and contain Lu and carbon nano-tube, jet printing technique is adopted to prepare salient point at chip surface, under certain pressure (1MPa ~ 10MPa) and temperature (170 DEG C ~ 260 DEG C) condition, realize the interconnection of three-dimensional Chip Vertical, form high strength interconnection solder joint.
The key issue that technique scheme mainly solves is: the material component optimizing rare earth element Lu, carbon nano-tube and In, obtains the interconnection material of high reliability.
Mechanism of the present invention is: by mating suitable interconnection material, and preparation, containing the paste interconnection material of rare earth element Lu, carbon nano-tube and In, forms interconnection solder joint by Transient liquid phase bonding technology and realizes chip-stacked interconnection.Chip-stacked for three-dimension packaging, such as Cu-In-Cu bonding, forms Cu
3in intermetallic compound solder joint, because formed in solid-liquid counterdiffusion in the process of intermetallic compound, there will be volume contraction, causes solder joint inside to occur a large amount of cavities.In addition in-service, because the mismatch of the ambient temperature of alternation and linear expansion coefficient, solder joint is as easy as rolling off a log becomes area of stress concentration.Add rare earth element Lu and carbon nano-tube, rare earth element Lu can react with matrix In, break original Cu-In element counterdiffusion balance, suppress the formation of solder joint interior void, carbon nano-tube can play the effect of strengthening, improve the intensity of solder joint, also play the part of " reinforcing bar " role in addition, between joint metal, compound particle there will be " armored concrete " structure in solder joint internal structure, when In-rare earth Lu-carbon nano-tube is applied to the chip-stacked interconnection of three-dimension packaging, solder joint inside forms " armored concrete " structure, there is the effect of opposing solder joint distortion, therefore solder joint has higher useful life in-service.Consider the performance change of reinforced concrete structure solder joint, at utmost play the effect of rare earth element Lu and carbon nano-tube, so controlling rare earth element Lu content is 0.01 ~ 0.5%, carbon nano-tube is 0.05 ~ 5%, and all the other are In.
Compared with the prior art, beneficial effect of the present invention is: a kind of high strength solder joint of the chip-stacked interconnection material formation containing Lu, carbon nano-tube has the effect of high useful life and resistance to deformation; Solder joint is 9.1 ~ 12.3 times of existing intermetallic compound solder joint useful life.
Accompanying drawing explanation
Fig. 1 is intermetallic compound solder joint and high strength solder joint useful life in-service.
Fig. 2 is the shear strength of intermetallic compound solder joint and high strength solder joint.
Embodiment
The present invention and effect is further illustrated below in conjunction with embodiment.
The material that following 10 embodiments use is: first adopt mechanical lapping to prepare In-Lu intermediate alloy powder, secondly mixing In-Lu powder, In powder, mixed rosin resin, thixotropic agent, stabilizer, active adjuvant and activating agent also fully stir, finally add carbon nano-tube, the interconnection material that paste contains Lu and carbon nano-tube is prepared in abundant stirring, jet printing technique is adopted to prepare salient point at chip surface, the interconnection of three-dimensional Chip Vertical is realized under certain pressure (1MPa ~ 10MPa) and temperature (170 DEG C ~ 260 DEG C) condition, form high strength interconnection solder joint.This interconnection material has high reliability, can be used for three-dimension packaging chip-stacked.
Embodiment 1
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.5%, carbon nano-tube 5%, surplus is In.
Bonding (260 DEG C, 10MPa) is formed afterwards high strength solder joint is (considering test error) about 5300 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 2
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.01%, carbon nano-tube 0.05%, surplus is In.
Bonding (250 DEG C, 9MPa) is formed afterwards high strength solder joint is (considering test error) about 3900 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 3
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.02%, carbon nano-tube 0.06%, surplus is In.
Bonding (240 DEG C, 8MPa) is formed afterwards high strength solder joint is (considering test error) about 3910 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 4
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.05%, carbon nano-tube 1%, surplus is In.
Bonding (220 DEG C, 7MPa) is formed afterwards high strength solder joint is (considering test error) about 4300 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 5
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.1%, carbon nano-tube 2%, surplus is In.
Bonding (180 DEG C, 5MPa) is formed afterwards high strength solder joint is (considering test error) about 4500 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 6
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.2%, carbon nano-tube 3%, surplus is In.
Bonding (170 DEG C, 1MPa) is formed afterwards high strength solder joint is (considering test error) about 4600 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 7
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.3%, carbon nano-tube 4%, surplus is In.
Bonding (200 DEG C, 4MPa) is formed afterwards high strength solder joint is (considering test error) about 4890 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 8
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.4%, carbon nano-tube 5%, surplus is In.
Bonding (230 DEG C, 6MPa) is formed afterwards high strength solder joint is (considering test error) about 5100 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 9
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.4%, carbon nano-tube 4%, surplus is In.
Bonding (210 DEG C, 3MPa) is formed afterwards high strength solder joint is (considering test error) about 5000 thermal cycles useful life, and paste interconnection material has excellent solderability.
Embodiment 10
Chip-stacked interconnection material composition containing Lu, carbon nano-tube is: a rare earth element Lu0.4%, carbon nano-tube 3%, surplus is In.
Bonding (190 DEG C, 2MPa) is formed afterwards high strength solder joint is (considering test error) about 4800 thermal cycles useful life, and paste interconnection material has excellent solderability.
Experimental example: when other components unchanged, the useful life of intermetallic compound solder joint and high-strength structure solder joint.
Conclusion: add rare earth element Lu and carbon nano-tube and can significantly improve intermetallic compound solder joint useful life, be 9.1 ~ 12.3 times of intermetallic compound solder joint.
Claims (4)
1., containing a chip-stacked interconnection material for Lu, carbon nano-tube, it is characterized in that: its composition and mass percent are: rare earth element Lu content is 0.01 ~ 0.5%, carbon nano-tube is 0.05 ~ 5%, and all the other are In.
2. a preparation method for a kind of chip-stacked interconnection material containing Lu, carbon nano-tube according to claim 1, is characterized in that: the customary preparation methods producing composite material can be adopted to obtain.
3. the preparation method of an a kind of chip-stacked interconnection material containing Lu, carbon nano-tube according to claim 1, it is characterized in that: first adopt mechanical lapping to prepare In-Lu intermediate alloy powder, secondly mixing In-Lu powder, In powder, mixed rosin resin, thixotropic agent, stabilizer, active adjuvant and activating agent also fully stir, finally add carbon nano-tube, fully stir the interconnection material prepared paste and contain Lu and carbon nano-tube.
4. the method for a kind of chip-stacked interconnection material formation high strength solder joint containing Lu, carbon nano-tube utilizing method described in claim 3 to obtain, it is characterized in that: use the interconnection material prepared paste and contain Lu and carbon nano-tube, jet printing technique is adopted to prepare salient point at chip surface, under certain pressure (1MPa ~ 10MPa) and temperature (170 DEG C ~ 260 DEG C) condition, realize the interconnection of three-dimensional Chip Vertical, form high strength interconnection solder joint.
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| CN201510477481.XA CN105047248A (en) | 2015-08-06 | 2015-08-06 | Chip stacking interconnected material containing Lu and carbon nano tube |
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Citations (7)
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| CN101341266A (en) * | 2005-08-30 | 2009-01-07 | 美国铟泰公司 | Technique for increasing the compliance of tin-indium solders |
| TW201127965A (en) * | 2010-02-12 | 2011-08-16 | Univ Nat Pingtung Sci & Tech | Composite lead-free solder alloy composition having nano-particles |
| CN102489898A (en) * | 2011-11-30 | 2012-06-13 | 昆山成利焊锡制造有限公司 | Low-silver lead-free flux paste and preparation method thereof |
| CN102891213A (en) * | 2011-06-29 | 2013-01-23 | 屏东科技大学 | Solar cell electrode made of active solder and method thereof |
| CN103842126A (en) * | 2011-08-02 | 2014-06-04 | 阿尔法金属公司 | Solder compositions |
| CN103862189A (en) * | 2014-03-10 | 2014-06-18 | 北京控制工程研究所 | Soft solder for welding gold or gold alloy and preparation method thereof |
| CN104701283A (en) * | 2015-02-09 | 2015-06-10 | 大连理工大学 | intermetallic compound filled three-dimensional packaging vertical through hole and preparation method thereof |
-
2015
- 2015-08-06 CN CN201510477481.XA patent/CN105047248A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101341266A (en) * | 2005-08-30 | 2009-01-07 | 美国铟泰公司 | Technique for increasing the compliance of tin-indium solders |
| TW201127965A (en) * | 2010-02-12 | 2011-08-16 | Univ Nat Pingtung Sci & Tech | Composite lead-free solder alloy composition having nano-particles |
| CN102891213A (en) * | 2011-06-29 | 2013-01-23 | 屏东科技大学 | Solar cell electrode made of active solder and method thereof |
| CN103842126A (en) * | 2011-08-02 | 2014-06-04 | 阿尔法金属公司 | Solder compositions |
| CN102489898A (en) * | 2011-11-30 | 2012-06-13 | 昆山成利焊锡制造有限公司 | Low-silver lead-free flux paste and preparation method thereof |
| CN103862189A (en) * | 2014-03-10 | 2014-06-18 | 北京控制工程研究所 | Soft solder for welding gold or gold alloy and preparation method thereof |
| CN104701283A (en) * | 2015-02-09 | 2015-06-10 | 大连理工大学 | intermetallic compound filled three-dimensional packaging vertical through hole and preparation method thereof |
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Address after: Yucai Road Jiawang District 221011 Jiangsu city of Xuzhou province No. 2 Applicant after: Jiangsu Normal University Address before: 221116 Shanghai Road, Copper Mt. New District, Jiangsu, No. 101, No. Applicant before: Jiangsu Normal University |
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Application publication date: 20151111 |
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