CN105045042B - 一种硅片台曝光区域六自由度位移测量方法 - Google Patents

一种硅片台曝光区域六自由度位移测量方法 Download PDF

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CN105045042B
CN105045042B CN201510197948.5A CN201510197948A CN105045042B CN 105045042 B CN105045042 B CN 105045042B CN 201510197948 A CN201510197948 A CN 201510197948A CN 105045042 B CN105045042 B CN 105045042B
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朱煜
张鸣
陈安林
成荣
杨开明
刘峰
宋玉晶
支凡
胡金春
徐登峰
穆海华
胡楚雄
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Tsinghua University
U Precision Tech Co Ltd
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    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/36—Forming the light into pulses
    • G01D5/38—Forming the light into pulses by diffraction gratings

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Abstract

一种硅片台曝光区域六自由度位移测量方法，应用于硅片台曝光区域的六自由度位移测量。硅片台包含线圈阵列和运动台，运动台磁钢阵列的下方固定平面光栅，将读数头固定在线圈阵列的空隙中，读数头中心线和透镜的中心线重合；读数头的测量光束入射在平面光栅上形成测量区域，测量区域的中心和曝光区域的中心在同一竖直线上；将曝光区域覆盖的那部分运动台近似为刚体，当运动台运动或由于振动发生变形时，由读数头测量得到测量区域的六自由度位移解算得到曝光区域的六自由度位移。实现了硅片台运动过程中任意时刻曝光区域的六自由度位移测量，降低测量复杂性，提高测量精度，尤其在运动台柔性较大时仍能精确测量任意时刻曝光区域的六自由度位移。

Description

一种硅片台曝光区域六自由度位移测量方法
技术领域
本发明涉及一种硅片台曝光区域六自由度位移测量方法，该硅片台曝光区域六自由度位移测量方法应用于半导体光刻机中，属于半导体制造装备技术领域。
背景技术
光刻机在曝光过程中，硅片分为多个视场，分别进行曝光。在进行硅片上一个视场的曝光过程中，曝光图像通过透镜投影到硅片上形成曝光区域。为保证曝光精度，硅片台需要进行调平调焦和调整水平位置，保证曝光区域和透镜之间的相对位置和角度，所以曝光区域的六自由度位移测量尤其重要。当这一视场曝光完成后，硅片台运动，使下一视场运动到曝光区域。在整个曝光过程中，曝光区域在硅片上的位置不断变化。
现有的激光干涉仪测量方式或者平面光栅测量方式，大多忽略运动台的柔性，将其看做刚体，通过测量运动台其他位置的位移，解算至曝光区域的六自由度位移，在运动台刚度较低时误差较大。现有技术可实现一个集成的读数头测量运动台六个自由度，但是现有平面光栅测量***的读数头多放置于运动台上，在硅片台运动过程中，测量的是运动台上固定点的位移，不能测量时刻变化着的曝光区域的六自由度位移。另外有测量方法通过测量运动台其他位置的位移，并考虑运动台的柔性模态，实时解算到曝光区域上，但此种方法解算精度低，算法复杂。
发明内容
本发明的目的在于提供一种硅片台曝光区域六自由度位移测量方法，实现硅片台运动台运动过程中任意时刻曝光区域六自由度位移的测量。
本发明的技术方案如下：
一种硅片台曝光区域六自由度位移测量方法，所述曝光区域为曝光光束投影到运动台上形成的区域，其特征在于所述方法包括如下步骤：
1)在运动台的磁钢阵列的下方固定平面光栅，平面光栅的测量面朝向线圈阵列，将读数头固定在线圈阵列的空隙中，读数头中心线和透镜的中心线重合；
2)读数头的测量光束入射在平面光栅上形成测量区域，测量区域的中心B和曝光区域的中心A在同一竖直线上；
3)在某一时刻，利用读数头和平面光栅测量得到测量区域的六自由度位姿(px,py,pz,θx,θy,θz)，其中(px,py,pz)是测量区域中心B点的坐标，θx,θy,θz是测量区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角；
4)将曝光区域覆盖的那部分运动台近似为刚体，根据测量区域的六自由度位姿，代入(px',py',pz',θx',θy',θz')＝(px+Lcosθx,py+Lcosθy,pz+Lcosθz,θx,θy,θz)解算得到曝光区域的六自由度位姿，其中px',py',pz'代表曝光区域中心A点的位置，θx',θy',θz'代表曝光区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，L是A、B两点的距离；
5)当运动台运动到下一时刻，曝光区域的六自由度位姿减去上一时刻的六自由度位姿即得到曝光区域从上一时刻到下一时刻的六自由度位移。
本发明与现有技术方案相比，具有以下优点及突出性的技术效果：本发明的技术方案通过巧妙的测量方案实现了硅片台运动过程中任意时刻曝光区域的六自由度位移测量，大大降低测量复杂性，提高了测量精度，尤其在运动台柔性较大时仍能精确测量任意时刻曝光区域的六自由度位移。
附图说明
图1是本发明提供的硅片台曝光区域六自由度位移测量方法实施例示意图。
图2是实施例中测量装置示意图。
图3是实施例中位姿解算示意图。
图中：1-透镜，2-曝光光束，3-运动台，4-线圈阵列，5-读数头，6-测量光束，7-背板，8-磁钢阵列，9-平面光栅，10-曝光区域，11-测量区域。
具体实施方式
下面结合附图对本发明实施方式作进一步详细描述。
图1是本发明提供的硅片台曝光区域六自由度位移测量方法实施例示意图，硅片台包含线圈阵列4和运动台3，线圈阵列4由在平面内排布的线圈组成，本实施例中采用方形线圈。图2是实施例中测量装置示意图，运动台3包含磁钢阵列8和背板7，所述磁钢阵列8粘接在背板7下方，磁钢阵列8采用二维永磁阵列,本实施例中采用二维halbach型永磁阵列。磁钢阵列8的下方固定有平面光栅9，测量面朝向线圈阵列4，读数头5固定在线圈阵列4的空隙中，空隙可以是线圈中间的空隙或挖走线圈所形成的空隙，本实施例中读数头5固定在线圈的空隙中。读数头5的中心线和透镜1的中心线重合，透镜1的曝光光束2投影到运动台3上形成曝光区域10。如图2，读数头5的测量光束6入射在平面光栅9上形成测量区域11，测量区域11和曝光区域10可以是圆形、方形或矩形等，本实施例中用方形表示，曝光区域10的中心A和测量区域11的中心B在同一竖直线上。
图3是实施例中位姿解算示意图。图中所示为曝光区域10覆盖的那部分运动台,静止坐标系O-XYZ固定在线圈阵列4上，原点O到测量区域11的中心B的位置向量为原点O到曝光区域10的中心A的位置向量为B点到A点的向量为利用读数头5和平面光栅9得到测量区域11的六自由度位姿为(px,py,pz,θx,θy,θz)，其中(px,py,pz)是测量区域11中心B点的坐标，θx,θy,θz是测量区域11所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，可参见Xinghui Li等在A six-degree-of-freedom surface encoder for precisionpositioning of a planar motion stage中提出的可以测量运动台六个自由度的读数头。设A、B两点距离为L，可得A点的位置向量可以用下式解算得到
式中px',py',pz'代表曝光区域10中心A点的位置。
由于曝光区域10面积较小，可将曝光区域10覆盖的这部分运动台近似为刚体，当整个运动台3运动或由于振动发生变形时，曝光区域10所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角(θx',θy',θz')分别和测量区域11所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角相等，即(θx',θy',θz')＝(θx,θy,θz)。
这样就由测量区域11的六自由度位姿解算出曝光区域10的六自由度位姿，即
(px',py',pz',θx',θy',θz')＝(px+Lcosθx,py+Lcosθy,pz+Lcosθz,θx,θy,θz)
其中px',py',pz'代表曝光区域中心A点的位置，θx',θy',θz'代表曝光区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，(px,py,pz)是测量区域中心B点的位置，θx,θy,θz是测量区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，L是A、B两点距离。
当运动台运动到下一时刻，曝光区域的六自由度位姿减去上一时刻的六自由度位姿即得到曝光区域从上一时刻到下一时刻的六自由度位移。
根据本发明解算得到的曝光区域的六自由度位移信号可用于反馈控制，控制曝光区域的调平调焦和水平运动；也可用于前馈控制，将当前时刻解算得到的曝光区域的六自由度位移误差提前补偿至下一时刻，减小调平调焦误差和水平运动误差。

Claims (1)

1.一种硅片台曝光区域六自由度位移测量方法，所述曝光区域(10)为曝光光束(2)投影到运动台(3)上形成的区域，其特征在于所述方法包括如下步骤：
1)在运动台的磁钢阵列(8)的下方固定平面光栅(9)，平面光栅的测量面朝向线圈阵列(4)，将读数头(5)固定在线圈阵列的空隙中，读数头中心线和透镜(1)的中心线重合；
2)读数头的测量光束(6)入射在平面光栅上形成测量区域(11)，测量区域的中心B和曝光区域(10)的中心A在同一竖直线上；
3)静止坐标系O-XYZ固定在线圈阵列(4)上，在某一时刻，利用读数头和平面光栅测量得到测量区域的六自由度位姿(px,py,pz,θx,θy,θz)，其中(px,py,pz)是测量区域中心B点的坐标，θx,θy,θz是测量区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角；
4)将曝光区域覆盖的那部分运动台近似为刚体，根据测量区域的六自由度位姿，代入(px',py',pz',θx',θy',θz')＝(px+Lcosθx,py+Lcosθy,pz+Lcosθz,θx,θy,θz)解算得到曝光区域的六自由度位姿，其中px',py',pz'代表曝光区域中心A点的位置，θx',θy',θz'代表曝光区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，L是A、B两点的距离；
5)当运动台运动到下一时刻，曝光区域的六自由度位姿减去上一时刻的六自由度位姿即得到曝光区域从上一时刻到下一时刻的六自由度位移。
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CN106225685B (zh) * 2016-08-26 2018-11-30 清华大学 一种硅片台大行程三自由度位移测量***
CN108508706B (zh) * 2017-02-28 2020-04-10 上海微电子装备（集团）股份有限公司 一种位移测量***以及曝光设备
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