CN105040070B - A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer - Google Patents
A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer Download PDFInfo
- Publication number
- CN105040070B CN105040070B CN201510586138.9A CN201510586138A CN105040070B CN 105040070 B CN105040070 B CN 105040070B CN 201510586138 A CN201510586138 A CN 201510586138A CN 105040070 B CN105040070 B CN 105040070B
- Authority
- CN
- China
- Prior art keywords
- film layer
- launch
- electrolyte
- solar absorption
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer, it is related to a kind of preparation method of titanium TA2 surface ceramic film layer.Coating the invention aims to solve existing titanium TA2 surface has that solar absorptance is low, and self emittance is high, the film layer problem not high with the adhesion of matrix.Method：Titanium TA2 pre-treatment；2nd, differential arc oxidation, obtains titanium TA2 surface high solar absorption low-launch-rate film layer.The thickness of titanium TA2 surface high solar absorption low-launch-rate film layer prepared by the present invention is 0.3 μm~1 μm, and the roughness of film layer is 0.2 μm~0.25 μm, and solar absorptance is 0.82~0.9, and emissivity is 0.08~0.13.The present invention can obtain a kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer.
Description
Technical field
The present invention relates to a kind of preparation method of titanium TA2 surface ceramic film layer.
Background technology
Industrial conventional industrially pure titanium is TA2, and because its corrosion resisting property and comprehensive mechanical property are moderate, intensity is not high, modeling
Property is good, it is easy to which machine-shaping, punching press, welding, machinable is functional；Air, seawater, moist chlorine and oxidisability, in
Property, there is in week reduction medium good corrosivity, inoxidizability is better than most of austenitic stainless steels, therefore titanium alloy
TA2 is applied than wide in industry and space flight.
Energy crisis allows it should be noted that solar energy this clean energy resource, but solar radiation shines the emittance after the earth
Density is relatively low, and this just brings great obstacle to extensive using solar energy, it is therefore necessary to before by Solar use, lead to
Certain methods are crossed to improve its energy density.Coating with high-absorbility low-launch-rate this optical property is inhaled to solar energy
High income, and the emissivity of itself is very low, the relatively low solar energy of energy density can be converted into the heat energy of high-energy-density,
Solar energy collecting together.And high-absorbility low-launch-rate film layer is also widely used in terms of infrared stealth.Therefore,
The coating for selective absorption of the excellent high solar absorptivity low-launch-rate of processability is to solar utilization technique and infrared
It is stealthy significant.
Both at home and abroad using the matrix material of ceramic material alternatively property absorber coatings, and study on metal-ceramic
Composite is used for coating for selective absorption, and metal mainly has Mo, Cr, Ni, Cu, Co, Au, Pt, W etc., and ceramics mainly have Al2O3、
SiO2With MgO etc..Having the different absorbed layer of multilayer refraction coefficient in research discovery coating can improve solar radiative absorption rate.Cause
Absorbed layer more than this design multilayer, particularly more than three layers of absorbed layer can greatly improve the absorptivity of coating.Than
Such as, basal layer is ceramic-metal composite, and intermediate layer is Ni/NiO+ metals, and outermost layer (antireflection layer) is Al4N3/
Al2O3.The spray pyrolysis method that has studied at this stage prepares CoO coating for selective absorption.Also prepared using technique for vacuum coating
Black aluminium solar selectively absorbing coating.Also useful magnetron sputtering method prepares the low transmitting film layer of high-selenium corn.Someone is prepared for one kind
AlNxOyCoating for selective absorption, but be only capable of being used in vacuum environment.But not only preparation technology is answered the coating of sandwich construction
Miscellaneous, high cost is unfavorable for industrialized production；And the increase of film layer will cause the rising heat emission with temperature than can drastically go up
Rise.
The content of the invention
It is low to there is solar absorptance in the coating the invention aims to solve existing titanium TA2 surface, itself hair
Penetrate that rate is high, the film layer problem not high with the adhesion of matrix, and a kind of low transmitting of high solar absorption of titanium TA2 surface is provided
The preparation method of rate film layer.
A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer, is to complete according to the following steps
's：
First, titanium TA2 pre-treatment：Successively using the silicon carbide paper of 240 mesh silicon carbide papers and 1000 mesh to titanium TA2
Grinding process is carried out, the titanium TA2 of flash removed and oxide layer is obtained；The titanium TA2 of flash removed and oxide layer will be gone to soak
Enter to HF and HNO3Mixed solution in 3s~10s, obtain the smooth titanium TA2 in surface；Surface is removed using NaOH solution
The oil on smooth titanium TA2 surface, reuses distilled water cleaning, is finally dried up using hair dryer, and the titanium after being processed is closed
Golden TA2；
NaOH solution described in step one is mixed by NaOH and distilled water, and described NaOH quality and distilled water
Volume ratio be (8g~15g):1L；
HF and HNO described in step one3Mixed solution be that 40% hydrofluoric acid and mass fraction are by mass fraction
65% nitric acid is mixed；Described HF and HNO3Mixed solution in mass fraction be with mass fraction for 40% hydrofluoric acid
The volume ratio of 65% nitric acid is 1:1；
2nd, differential arc oxidation：In the electrolyte that titanium TA2 after treatment is placed in stainless steel, the titanium alloy after treatment
TA2 is connected with the positive pole of power supply, and used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Using arteries and veins
Mao power source is rushed to power, pressure rising time be 5s~15s, constant voltage be 300V~500V, supply frequency be 50Hz~
2000Hz, dutycycle be 10%~45%, electrolyte temperature be 20 DEG C~40 DEG C and electrolyte pH value be 11~13 bar
1s~10s is reacted under part, titanium TA2 surface high solar absorption low-launch-rate film layer is obtained；
Electrolyte described in step 2 is made up of main film forming agent and secondary film formers, and solvent is water；Described main film forming
The concentration of agent is 3g/L~10g/L；The concentration of secondary film formers is 10g/L~20g/L.
Principle of the invention：
Solar energy spectrum energy is concentrated mainly on the scope of 300nm~2500nm, and the wave-length coverage of visible ray is 400nm
~800nm, when solar irradiation is mapped on film surface, incident light enters pore structure, and aperture in 500nm or so, being capable of beam
Most of incident light is bound, reflective light intensity is greatly reduced, in addition metal oxide of the differential arc oxidation in TA2 Surface Creations
Solar spectrum can be absorbed, so there is absorptivity high；The radiance of the metal of smooth surface is very low, by the thickness for controlling film layer
Degree, makes the film layer reduction for being conducive to infrared emittance thin as far as possible in the case of porous surface, and thicknesses of layers is less than 1 μm,
So the emissivity for obtaining is low.
Advantages of the present invention：
First, the present invention uses the porous ceramic film of differential arc oxidization technique growth in situ on titanium TA2, due to being former
The characteristics of position growth, therefore film layer is very strong with the binding ability of matrix, overcomes film layer to adhere to loosely this shortcoming；
2nd, the differential arc oxidization technique process is simple that the present invention is used, low cost is easily realized, inhaled to preparing high solar
Yield low-launch-rate film layer has very important significance；
3rd, the present invention uses differential arc oxidization technique prepares coating, during element mostlys come from matrix and solution in coating
Ion, and micro-arc oxidation process completes in the electrolytic solution, so just film layer can be adjusted by adjusting the solute in solution
Element and phase composition, prepare the excellent film layer of function；
4th, the thickness of titanium TA2 surface high solar absorption low-launch-rate film layer prepared by the present invention is 0.3 μm~1 μ
M, the roughness of film layer is 0.2 μm~0.25 μm, and solar absorptance is 0.82~0.9, and emissivity is 0.08~0.13；
5th, titanium TA2 surface high solar absorption low-launch-rate film layer prepared by the present invention is 500 DEG C of conditions in temperature
Under, 3min is incubated, cooling in water is placed into, thermal shock is repeated and tests 70 times, coating does not fall off, and shows obtained by the present invention
Titanium TA2 surface high solar absorption low-launch-rate film layer there is excellent adhesion and heat endurance.
The present invention can obtain a kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer.
Brief description of the drawings
Fig. 1 is the SEM figures of titanium TA2 surface high solar absorption low-launch-rate film layer prepared by embodiment one.
Specific embodiment
Specific embodiment one：Present embodiment is a kind of titanium TA2 surface high solar absorption low-launch-rate film layer
Preparation method complete according to the following steps：
First, titanium TA2 pre-treatment：Successively using the silicon carbide paper of 240 mesh silicon carbide papers and 1000 mesh to titanium TA2
Grinding process is carried out, the titanium TA2 of flash removed and oxide layer is obtained；The titanium TA2 of flash removed and oxide layer will be gone to soak
Enter to HF and HNO3Mixed solution in 3s~10s, obtain the smooth titanium TA2 in surface；Surface is removed using NaOH solution
The oil on smooth titanium TA2 surface, reuses distilled water cleaning, is finally dried up using hair dryer, and the titanium after being processed is closed
Golden TA2；
NaOH solution described in step one is mixed by NaOH and distilled water, and described NaOH quality and distilled water
Volume ratio be (8g~15g):1L；
HF and HNO described in step one3Mixed solution be that 40% hydrofluoric acid and mass fraction are by mass fraction
65% nitric acid is mixed；Described HF and HNO3Mixed solution in mass fraction be with mass fraction for 40% hydrofluoric acid
The volume ratio of 65% nitric acid is 1:1；
2nd, differential arc oxidation：In the electrolyte that titanium TA2 after treatment is placed in stainless steel, the titanium alloy after treatment
TA2 is connected with the positive pole of power supply, and used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Using arteries and veins
Mao power source is rushed to power, pressure rising time be 5s~15s, constant voltage be 300V~500V, supply frequency be 50Hz~
2000Hz, dutycycle be 10%~45%, electrolyte temperature be 20 DEG C~40 DEG C and electrolyte pH value be 11~13 bar
1s~10s is reacted under part, titanium TA2 surface high solar absorption low-launch-rate film layer is obtained；
Electrolyte described in step 2 is made up of main film forming agent and secondary film formers, and solvent is water；Described main film forming
The concentration of agent is 3g/L~10g/L；The concentration of secondary film formers is 10g/L~20g/L.
The advantage of present embodiment：
First, present embodiment uses the porous ceramic film of differential arc oxidization technique growth in situ on titanium TA2, due to
The characteristics of being growth in situ, therefore film layer is very strong with the binding ability of matrix, overcomes film layer to adhere to loosely this shortcoming；
2nd, the differential arc oxidization technique process is simple that present embodiment is used, low cost is easily realized, to preparing the sun high
Energy absorptivity low-launch-rate film layer has very important significance；
3rd, present embodiment uses differential arc oxidization technique prepares coating, and element mostlys come from matrix and solution in coating
In ion, and micro-arc oxidation process completes in the electrolytic solution, so just can be by adjusting the solute in solution come adjusting film
The element of layer and phase composition, prepare the excellent film layer of function；
4th, the thickness of titanium TA2 surface high solar absorption low-launch-rate film layer prepared by present embodiment is 0.3 μm
~1 μm, the roughness of film layer is 0.2 μm~0.25 μm, and solar absorptance is 0.82~0.9, and emissivity is 0.08~0.13；
5th, titanium TA2 surface high solar absorption low-launch-rate film layer prepared by present embodiment is 500 DEG C in temperature
Under the conditions of, 3min is incubated, cooling in water is placed into, thermal shock is repeated and tests 70 times, coating does not fall off, and shows institute of the present invention
Obtained titanium TA2 surface high solar absorption low-launch-rate film layer has excellent adhesion and heat endurance.
Present embodiment can obtain a kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer.
Specific embodiment two：Present embodiment is with the difference of specific embodiment one：Described in step 2 it is main into
Film is sodium aluminate.Other steps are identical with specific embodiment one.
Specific embodiment three：One of present embodiment and specific embodiment one or two difference is：It is auxiliary in step 2
Furtherance film is one kind or wherein several mixed liquors in tertiary sodium phosphate, sodium hypophosphite, calgon and polyphosphoric acids.
Other steps are identical with specific embodiment one or two.
Specific embodiment four：One of present embodiment and specific embodiment one to three difference is：Will in step 2
In the electrolyte that titanium TA2 after treatment is placed in stainless steel, the titanium TA2 after treatment is connected with the positive pole of power supply,
Used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Powered using pulse mao power source,
Pressure rising time be 5s~10s, constant voltage be 300V~400V, supply frequency be 50Hz~1000Hz, dutycycle be 10%~
30%th, the temperature of electrolyte be the pH value of 20 DEG C~25 DEG C and electrolyte to react 1s~5s under conditions of 11~12, obtain titanium
Alloy TA2 surfaces high solar absorption low-launch-rate film layer.Other steps are identical with specific embodiment one to three.
Specific embodiment five：One of present embodiment and specific embodiment one to four difference is：Will in step 2
In the electrolyte that titanium TA2 after treatment is placed in stainless steel, the titanium TA2 after treatment is connected with the positive pole of power supply,
Used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Powered using pulse mao power source,
Pressure rising time be 10s~15s, constant voltage be 400V~500V, supply frequency be 1000Hz~2000Hz, dutycycle be 10%~
30%th, the temperature of electrolyte be the pH value of 25 DEG C~40 DEG C and electrolyte to react 5s~10s under conditions of 12~13, obtain titanium
Alloy TA2 surfaces high solar absorption low-launch-rate film layer.Other steps are identical with specific embodiment one to four.
Specific embodiment six：One of present embodiment and specific embodiment one to five difference is：Will in step 2
In the electrolyte that titanium TA2 after treatment is placed in stainless steel, the titanium TA2 after treatment is connected with the positive pole of power supply,
Used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Powered using pulse mao power source,
Pressure rising time be 10s, constant voltage be 400V, supply frequency be 1000Hz, temperature that dutycycle is 30%, electrolyte for 25 DEG C and
The pH value of electrolyte be 12 under conditions of react 5s, obtain titanium TA2 surface high solar absorption low-launch-rate film layer.Other
Step is identical with specific embodiment one to five.
Specific embodiment seven：One of present embodiment and specific embodiment one to six difference is：Institute in step 2
The concentration of the main film forming agent stated is 3g/L~5g/L；The concentration of the secondary film formers described in step 2 is 10g/L~15g/L.
Other steps are identical with specific embodiment one to six.
Specific embodiment eight：One of present embodiment and specific embodiment one to seven difference is：Institute in step 2
The concentration of the main film forming agent stated is 5g/L~10g/L；The concentration of the secondary film formers described in step 2 is 15g/L~20g/L.
Other steps are identical with specific embodiment one to seven.
Specific embodiment nine：One of present embodiment and specific embodiment one to eight difference is：Institute in step 2
The concentration of the main film forming agent stated is 5g/L；The concentration of the secondary film formers described in step 2 is 10g/L.Other steps with it is specific
Implementation method one to eight is identical.
Specific embodiment ten：One of present embodiment and specific embodiment one to nine difference is：Described in step
NaOH solution mixed by NaOH and distilled water, and the quality of described NaOH and the volume ratio of distilled water are 15g:1L.
Other steps are identical with specific embodiment one to nine.
Beneficial effects of the present invention are verified using tests below：
Embodiment one：A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer is by following
What step was completed：
First, titanium TA2 pre-treatment：Successively using the silicon carbide paper of 240 mesh silicon carbide papers and 1000 mesh to titanium TA2
Grinding process is carried out, the titanium TA2 of flash removed and oxide layer is obtained；The titanium TA2 of flash removed and oxide layer will be gone to soak
Enter to HF and HNO3Mixed solution in 5s, obtain the smooth titanium TA2 in surface；It is smooth surface to be removed using NaOH solution
The oil on titanium TA2 surface, reuses distilled water cleaning, is finally dried up using hair dryer, the titanium TA2 after being processed；
NaOH solution described in step one is mixed by NaOH and distilled water, and described NaOH quality and distilled water
Volume ratio be 15g:1L；
HF and HNO described in step one3Mixed solution be that 40% hydrofluoric acid and mass fraction are by mass fraction
65% nitric acid is mixed；Described HF and HNO3Mixed solution in mass fraction be with mass fraction for 40% hydrofluoric acid
The volume ratio of 65% nitric acid is 1:1；
2nd, differential arc oxidation：In the electrolyte that titanium TA2 after treatment is placed in stainless steel, the titanium alloy after treatment
TA2 is connected with the positive pole of power supply, and used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Using arteries and veins
Rush mao power source to power, be that 10s, constant voltage are that 400V, supply frequency are that 1000Hz, dutycycle are in pressure rising time
30%th, the temperature of electrolyte be the pH value of 25 DEG C and electrolyte to react 5s under conditions of 12, obtain titanium TA2 surface high too
Positive absorptivity low-launch-rate film layer；
Electrolyte described in step 2 is made up of main film forming agent and secondary film formers, and solvent is water；Described main film forming
The concentration of agent is 5g/L；The concentration of secondary film formers is 10g/L；
Main film forming agent described in step 2 is sodium aluminate；Tertiary sodium phosphate in described secondary film formers.
Fig. 1 is the SEM figures of titanium TA2 surface high solar absorption low-launch-rate film layer prepared by embodiment one；From Fig. 1
Understand, the average diameter of the micropore of titanium TA2 surface high solar absorption low-launch-rate film layer prepared by embodiment one exists
500nm or so, and the Wavelength distribution of visible ray is in 400nm~800nm, thus can well absorb visible ray；Embodiment one
Knowable to the titanium TA2 surface high solar absorption low-launch-rate film layer of the titanium alloy T A of preparation is tested, embodiment one is made
The emissivity ε of standby titanium TA2 surface high solar absorption low-launch-rate film layer is less than 0.1；Because the surface sun high is inhaled
Yield low-launch-rate film layer is thin, so the emissivity very little on surface.
Using Perkin Elmer Lambda 950 (ultraviolet/visible/near infrared spectrophotometer) prepared by embodiment one
Titanium TA2 surface high solar absorption low-launch-rate film layer tested knowable to, embodiment one prepare titanium TA2 table
The solar absorptance α of face high solar absorption low-launch-rate film layer is 0.9；Use TEMP 2000A portable infrared emissivity
Instrument embodiment one prepare titanium TA2 surface high solar absorption low-launch-rate film layer tested knowable to the preparation of embodiment one
Titanium TA2 surface high solar absorption low-launch-rate film layer thickness be less than 1.0 μm.
Titanium TA2 surface high solar absorption low-launch-rate film layer prepared by embodiment one is 500 DEG C of conditions in temperature
Under, 3min is incubated, cooling in water is placed into, thermal shock is repeated and tests 70 times, coating does not fall off, and shows obtained by the present invention
Titanium TA2 surface high solar absorption low-launch-rate film layer there is excellent adhesion and heat endurance.
Claims (8)
1. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer, it is characterised in that a kind of TA2 surfaces are high too
The preparation method of positive absorptivity low-launch-rate film layer is completed according to the following steps：
First, TA2 pre-treatments：Grinding process is carried out to TA2 using the silicon carbide paper of 240 mesh silicon carbide papers and 1000 mesh successively, is obtained
To the TA2 for removing flash removed and oxide layer；The TA2 of flash removed and oxide layer will be gone to be immersed in HF and HNO3Mixed solution in 3s~
10s, obtains the smooth TA2 in surface；The oil on the smooth TA2 surfaces in surface is removed using NaOH solution, distilled water cleaning is reused,
Finally dried up using hair dryer, the TA2 after being processed；
NaOH solution described in step one is mixed by NaOH and distilled water, and quality and the distilled water of described NaOH body
Product is than being (8g~15g):1L；
HF and HNO described in step one3Mixed solution be 40% hydrofluoric acid by mass fraction and nitre that mass fraction is 65%
Acid is mixed；Described HF and HNO3Mixed solution in mass fraction is 40% hydrofluoric acid with mass fraction is 65% nitre
The volume ratio of acid is 1:1；
2nd, differential arc oxidation：In the electrolyte that TA2 after treatment is placed in stainless steel, the positive pole phase of TA2 after treatment and power supply
Connection, used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Supplied using pulse mao power source
Electricity, pressure rising time be 5s~15s, constant voltage be 300V~500V, supply frequency be 50Hz~2000Hz, dutycycle be 10%
~45%, the temperature of electrolyte be the pH value of 20 DEG C~40 DEG C and electrolyte to react 1s~10s under conditions of 11~13, obtain
TA2 surfaces high solar absorption low-launch-rate film layer；
Electrolyte described in step 2 is made up of main film forming agent and secondary film formers, and solvent is water；Described main film forming agent
Concentration is 3g/L~10g/L；The concentration of secondary film formers is 10g/L~20g/L；
Main film forming agent described in step 2 is sodium aluminate；
In step 2 secondary film formers be tertiary sodium phosphate, sodium hypophosphite, calgon and polyphosphoric acids in one kind or its
In several mixed liquor.
2. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer according to claim 1, its feature
It is that the TA2 after treatment is connected with the positive pole of power supply in the electrolyte TA2 after treatment being placed in stainless steel in step 2
Connect, used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Powered using pulse mao power source,
Pressure rising time be 5s~10s, constant voltage be 300V~400V, supply frequency be 50Hz~1000Hz, dutycycle be 10%~
30%th, the temperature of electrolyte be the pH value of 20 DEG C~25 DEG C and electrolyte to react 1s~5s under conditions of 11~12, obtain TA2
Surface high solar absorption low-launch-rate film layer.
3. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer according to claim 1, its feature
It is that the TA2 after treatment is connected with the positive pole of power supply in the electrolyte TA2 after treatment being placed in stainless steel in step 2
Connect, used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Powered using pulse mao power source,
Pressure rising time be 10s~15s, constant voltage be 400V~500V, supply frequency be 1000Hz~2000Hz, dutycycle be 10%
~30%, the temperature of electrolyte be the pH value of 25 DEG C~40 DEG C and electrolyte to react 5s~10s under conditions of 12~13, obtain
TA2 surfaces high solar absorption low-launch-rate film layer.
4. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer according to claim 1, its feature
It is that the TA2 after treatment is connected with the positive pole of power supply in the electrolyte TA2 after treatment being placed in stainless steel in step 2
Connect, used as anode, stainless steel electrolytic groove is connected with the negative pole of power supply, used as negative electrode；Powered using pulse mao power source,
It it is 25 DEG C in the temperature that pressure rising time is 10s, constant voltage is 400V, supply frequency is 1000Hz, dutycycle is 30%, electrolyte
With the pH value of electrolyte to react 5s under conditions of 12, TA2 surfaces high solar absorption low-launch-rate film layer is obtained.
5. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer according to claim 1, its feature
The concentration for being main film forming agent described in step 2 is 3g/L~5g/L；The concentration of the secondary film formers described in step 2 is
10g/L~15g/L.
6. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer according to claim 1, its feature
The concentration for being main film forming agent described in step 2 is 5g/L~10g/L；The concentration of the secondary film formers described in step 2
It is 15g/L~20g/L.
7. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer according to claim 1, its feature
The concentration for being described main film forming agent described in step 2 is 5g/L；The concentration of the secondary film formers described in step 2 is
10g/L。
8. a kind of preparation method of TA2 surfaces high solar absorption low-launch-rate film layer according to claim 1, its feature
Be that NaOH solution described in step one is mixed by NaOH and distilled water, and quality and the distilled water of described NaOH body
Product is than being 15g:1L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510586138.9A CN105040070B (en) | 2015-09-15 | 2015-09-15 | A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510586138.9A CN105040070B (en) | 2015-09-15 | 2015-09-15 | A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105040070A CN105040070A (en) | 2015-11-11 |
| CN105040070B true CN105040070B (en) | 2017-06-20 |
Family
ID=54447032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510586138.9A Active CN105040070B (en) | 2015-09-15 | 2015-09-15 | A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105040070B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110196460A (en) * | 2019-06-21 | 2019-09-03 | 东北大学 | A kind of infrared stealth metal nanoparticle Meta Materials composite membrane compatible with visible light stealth and preparation method thereof |
| CN111254473B (en) * | 2020-03-18 | 2021-03-26 | 哈尔滨工业大学 | Preparation method of high-solar-absorptivity stray light eliminating film layer on surface of aluminum-silicon alloy |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260558A (en) * | 2008-04-23 | 2008-09-10 | 哈尔滨工业大学 | Method for preparing corrosion-resisting wear-proof ceramic coat on TA15 titanium alloy surface |
| CN103194780A (en) * | 2013-04-01 | 2013-07-10 | 哈尔滨工业大学 | Preparation method of titanium alloy surface coating with low solar absorptivity and high emissivity |
| CN104005073A (en) * | 2014-06-10 | 2014-08-27 | 哈尔滨工业大学 | Preparation method of low-solar-absorptance high-emissivity coating on surface of titanium alloy TC4 |
-
2015
- 2015-09-15 CN CN201510586138.9A patent/CN105040070B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260558A (en) * | 2008-04-23 | 2008-09-10 | 哈尔滨工业大学 | Method for preparing corrosion-resisting wear-proof ceramic coat on TA15 titanium alloy surface |
| CN103194780A (en) * | 2013-04-01 | 2013-07-10 | 哈尔滨工业大学 | Preparation method of titanium alloy surface coating with low solar absorptivity and high emissivity |
| CN104005073A (en) * | 2014-06-10 | 2014-08-27 | 哈尔滨工业大学 | Preparation method of low-solar-absorptance high-emissivity coating on surface of titanium alloy TC4 |
Non-Patent Citations (1)
| Title |
|---|
| Growth characteristics of plasma electrolytic oxidation ceramic coatings on Ti-6Al-4V alloy;Zhongping Yao et al;《applied surface science》;20080116(第254期);第4084-4091页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105040070A (en) | 2015-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106350849B (en) | The oxidation film electro-deposition preparation method of aluminium surface high-selenium corn and low transmitting solar spectrum | |
| CN108330524B (en) | Nano nickel titanium dioxide nanotube array perforated membrane and preparation method thereof | |
| CN104477892B (en) | Flaky graphite alkene device prepared by the preparation method of a kind of flaky graphite alkene and use the method | |
| CN105177672B (en) | A kind of preparation method of titanium alloy surface high solar absorptivity high emissivity black matt film layer | |
| CN101748469B (en) | Method for preparing thermal control coating with high sunlight absorptivity and high emittance on the surface of magnesium alloy | |
| CN107557789B (en) | A kind of optical anode material and its preparation and application | |
| CN104532324B (en) | A kind of method that utilization differential arc oxidation prepares low sunlight absorptivity high emissivity coating in Mg alloy surface | |
| CN101748468A (en) | Preparation method of thermal control coating with high solar absorption factor and high emissivity on magnesium alloy surface | |
| CN105040070B (en) | A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer | |
| CN101769648A (en) | Selective coating for absorbing solar light and heat | |
| CN106757056A (en) | A kind of preparation method of barium titanate/nano titania composite film material | |
| CN105568238B (en) | Preparation method of film system with solar selective absorption film | |
| US3958554A (en) | Solar collector having oxygen-deficient PbO2 coating | |
| CN107779921A (en) | The preparation method of the compound heat absorbing coating of AAO photonic crystal based high-temp-resistant ternary nanos | |
| CN201344668Y (en) | Selective solar photo-thermal absorbing composite coat | |
| CN107806714A (en) | The preparation method of Co/WC base solar coating for selective absorption | |
| CN102734966A (en) | Tank type solar intermediate temperature selective absorption coating | |
| CN106556171B (en) | A kind of etching generation high temperature resistant selective absorbing functional membrane | |
| CN104060243A (en) | Plasma and magnetism integrated metal nanoparticle film and preparation method thereof | |
| CN108360040A (en) | There is the preparation method of light thermal property porous yarn for accelerating water evaporation | |
| CN107620104A (en) | The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum | |
| CN113235147B (en) | Preparation method of self-assembled nano-structure composite material for solar energy absorption | |
| CN115710012B (en) | Method for synthesizing zinc oxide nanowire array | |
| CN102127800B (en) | Method for selective absorption treatment of alloy surface | |
| CN102121125A (en) | Composite material selectively absorbing sunlight |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |