CN105032467A - Photoelectrical catalyst of high purity WO<3>/C<3>N<4> composite mesoporous nano-belt - Google Patents
Photoelectrical catalyst of high purity WO<3>/C<3>N<4> composite mesoporous nano-belt Download PDFInfo
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- CN105032467A CN105032467A CN201510433948.0A CN201510433948A CN105032467A CN 105032467 A CN105032467 A CN 105032467A CN 201510433948 A CN201510433948 A CN 201510433948A CN 105032467 A CN105032467 A CN 105032467A
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Abstract
The invention relates to a photoelectrical catalyst of a high purity WO<3>/C<3>N<4> composite mesoporous nano-belt and belongs to the technical field of photoelectrocatalysis. A preparation method of the WO<3>/C<3>N<4> composite mesoporous nano-belt comprise the steps of preparing a precursor spinning solution, conducting spinning on the precursor spinning solution which is prepared ready, obtaining precursor nano-materials, conducting drying and high temperature calcination, and obtaining the high purity WO<3>/C<3>N<4> composite mesoporous nano-belt. When the nano-belt serves as the phtoelectrical catalyst, the WO<3>/C<3>N<4> composite mesoporous nano-belt is loaded on a carrier. When the high purity WO<3>/C<3>N<4> composite mesoporous nano-belt is used as the photoelectrical catalyst, the photoelectrocatalysis performance can be improved. According to the photoelectrical catalyst, the electrostatic spinning technology is adopted, the photoelectrical catalyst is prepared by adding g-C<3>N<4> and TS in the precursor spinning solution, the preparation technology is simple, the controllability is achieved, and the repeatability is good.
Description
Technical field
The present invention relates to a kind of photoelectric, particularly relate to a kind of high-purity WO
3/ C
3n
4composite mesopore nanobelt photoelectric, belongs to photo-electrocatalytic technology field.
In the present invention, PVP refers to polyvinylpyrrolidone; TS refers to Tea Saponin; WCl
6refer to tungsten hexachloride.
Background technology
Along with the increase day by day of global regenerative resource and sustainable energy demand, Optical Electro-Chemistry water decomposition produces oxygen and hydrogen is studied widely.And the common-denominator target of photoelectrocatalysis research remains a kind of novel, efficient photoelectric of exploitation, Water oxidize can be formed oxygen by effectively.
In numerous photoelectric, tungstic acid (WO
3) because its suitable band gap, electron mobility is higher, aboundresources and low cost are a kind of up-and-coming materials.But low the restriction during its life is produced with poor stability of its photoelectric transformation efficiency is applied.In order to address these problems, recent researches personnel improve its performance by modification and doping, and it shows good effect.Improving photo-generate electron-hole is formation composite be made up of the semiconductor of two types to one of method of separative efficiency.Its principle utilizes the conduction band of two semiconductors to provide suitable driving force to be separated with the energy level difference of valence band and shifts photo-generate electron-hole to carrying out photoelectrocatalysis efficiency.And carbonitride (C
3n
4) due to its bandwidth be ~ 2.7eV absorbing wavelength can be less than the light of 460nm and stable performance, pollution-free, it can mate with multiple semi-conducting material, is desirable composite.
Summary of the invention
The object of the invention is for the above-mentioned problems in the prior art, propose a kind of WO that can improve PhotoelectrocatalytiPerformance Performance
3/ C
3n
4composite mesopore nanobelt photoelectric.
Object of the present invention realizes by following technical proposal: a kind of high-purity WO
3/ C
3n
4composite mesopore nanobelt photoelectric, during as photoelectric, WO
3/ C
3n
4composite mesopore nanobelt is carried on carrier.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, WO
3/ C
3n
4the composite mesopore nanobelt load capacity be carried on carrier is 3-8mg/cm
2.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, WO
3/ C
3n
4composite mesopore nanobelt is polycrystalline WO
3/ C
3n
4composite mesopore nanobelt.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, WO
3/ C
3n
4the hole density of composite mesopore nanobelt is 0.01-0.08cm
3/ g.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, WO
3/ C
3n
4the specific area of composite mesopore nanobelt is 8-20m
2/ g.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, described WO
3/ C
3n
4the wide of composite mesopore nanobelt is 800nm ~ 1 μm, and thick is 150 ~ 200nm.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, carrier is conductive material, and wherein conductive material comprises electro-conductive glass or conductive rubber or conductive plastics or metal material.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, polycrystalline WO
3/ C
3n
4the preparation method of composite mesopore nanobelt is: preparation spinning liquid as precursor, obtains after presoma nano material dry, obtain high-purity WO through high-temperature calcination by the spinning liquid as precursor prepared through spinning
3/ C
3n
4composite mesopore nanobelt.
The present invention by adding g-C in spinning liquid as precursor
3n
4and TS, adopt electrostatic spinning technique, realize WO
3/ C
3n
4the preparation of mesoporous nano belt.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, being formulated as of spinning liquid as precursor: by raw material g-C
3n
4put into ethanol solution and form emulsion, emulsion forms mixed solution with DMF again, finally again by raw material WCl
6, PVP, TS be dissolved in mixed solution and form spinning liquid as precursor.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, 1g raw material g-C during spinning liquid as precursor configuration
3n
4put into 150-250mL ethanol solution.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, during spinning liquid as precursor configuration, in mixed solution, the volume ratio of emulsion and DMF is 1:(2-6).
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, every 1mL mixed solution Raw WCl during spinning liquid as precursor configuration
6use amount be 0.2-0.8g.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, during spinning liquid as precursor configuration, the use amount of every 1mL mixed solution Raw PVP is 0.05-0.1g.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, during spinning liquid as precursor configuration, the use amount of every 1mL mixed solution Raw TS is 0.1-0.2g.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, spinning liquid as precursor obtains precursor monodimension nanometer material through electrostatic spinning, and wherein the voltage of electrostatic spinning is 5-10kV, and the distance between negative electrode and positive electrode is 15-25cm.
At above-mentioned a kind of high-purity WO
3/ C
3n
4in composite mesopore nanobelt photoelectric, high-temperature calcination for calcine 20-40min at calcining heat 450-550 DEG C.
Compared with prior art, the present invention has following advantage:
1. high-purity WO of the present invention
3/ C
3n
4composite mesopore nanobelt photoelectric can realize the raising of PhotoelectrocatalytiPerformance Performance.
2. the present invention adopts electrostatic spinning technique, by adding g-C in spinning liquid as precursor
3n
4and TS, realize high-purity WO
3/ C
3n
4the preparation of composite mesopore nanobelt.
3. high-purity WO of the present invention
3/ C
3n
4the preparation technology of composite mesopore nanobelt is simple, controlled, reproducible.
Accompanying drawing explanation
The scanning electron microscope figure of the presoma nano material of Fig. 1 obtained by the embodiment of the present invention 1.
The scanning electron microscope (SEM) photograph in the presoma nano material cross section of Fig. 2 obtained by the embodiment of the present invention 1.
The WO of Fig. 3 obtained by the embodiment of the present invention 1
3/ C
3n
4the scanning electron microscope figure of composite mesopore nanobelt.
The WO of Fig. 4 obtained by the embodiment of the present invention 1
3/ C
3n
4the scanning electron microscope figure in composite mesopore nanobelt cross section.
The WO of Fig. 5 obtained by the embodiment of the present invention 1
3/ C
3n
4under composite mesopore nanobelt high-resolution multiplying power transmission electron microscope picture.
The WO of Fig. 6 obtained by the embodiment of the present invention 1
3/ C
3n
4voltage-to-current response collection of illustrative plates under composite mesopore nanobelt photoelectric transient state.
The WO of Fig. 7 obtained by the embodiment of the present invention 1
3/ C
3n
4m-current-responsive collection of illustrative plates time under composite mesopore nanobelt photoelectric transient state.
The WO of Fig. 8 obtained by the embodiment of the present invention 1
3/ C
3n
4m-open circuit voltage variations collection of illustrative plates time under composite mesopore nanobelt photoelectric transient state.
The WO of Fig. 9 obtained by the embodiment of the present invention 1
3/ C
3n
4the impedance spectrum of composite mesopore nanobelt photoelectric.
The WO of Figure 10 obtained by the embodiment of the present invention 1
3/ C
3n
4composite mesopore nanobelt photoelectric is at the Na of 0.5M
2sO
4in with the not special Schottky collection of illustrative plates under 1kHz illumination.
Detailed description of the invention
Be below specific embodiments of the invention, and accompanying drawings is further described technical scheme of the present invention, but the present invention is not limited to these embodiments.
Embodiment 1:
By 2.5g raw material g-C
3n
4put into 500mL ethanol solution, utilize cell disruptor to pulverize 12 hours, form emulsion.The DMF of the emulsion and 4mL of then getting 1mL is mixed to form mixed solution, then the PVP taking 0.4g joins in mixed solution slowly, at room temperature stirs 2h, until obtain the PVP solution of clear, then takes the WCl of 2g
6join in scattered PVP solution fast, at room temperature continue to stir 0.5h, until form the navy blue WCl of clarification
6the solution of/PVP, the TS finally taking 0.8 joins scattered WCl rapidly
6at room temperature continue in the solution of/PVP to stir 0.5h, until form the navy blue WCl of clarification
6the precursor spinning solution of/PVP/TS.
After being left standstill by the spinning liquid as precursor configured in injected plastic needle tubing, and level is placed on spinning-drawing machine.Metal needle (0.22mm) makes Electrospun anode, and the negative electrode receiving material made by wire netting, and the distance between anode and negative electrode is 20cm, under 8kV high pressure, carry out electrostatic spinning, prepares the equally distributed organic precursor nano material of high-purity.Then the organic precursor nano material prepared is placed in 70 DEG C of constant temp. drying boxes, obtains solid-state organic precursor nano material.
Solid-state organic precursor nano material is placed in crucible, heats up with 7 DEG C/min speed in air atmosphere, be incubated at 500 DEG C and calcine for 30 minutes, then with stove cooling, obtain high-purity WO
3/ C
3n
4composite mesopore nanobelt.
Finally, during as photoelectric, by the WO prepared
3/ C
3n
4composite mesopore nanobelt ultrasonic disperse, in ethanolic solution, then drips and is coated onto on electro-conductive glass, with post-drying, makes WO
3/ C
3n
4composite mesopore nanobelt is carried on electro-conductive glass.Wherein, WO
3/ C
3n
4the composite mesopore nanobelt load capacity be carried on electro-conductive glass is 5mg/cm
2, WO
3/ C
3n
4the hole density of composite mesopore nanobelt is 0.047cm
3/ g, specific area is 13.4m
2/ g, wide is 800nm, and thick is 150nm.
As shown in the figure: the typical scan electromicroscopic photograph of the presoma sample of Fig. 1 and 2 prepared by embodiment 1; The WO of Fig. 3 and 4 prepared by embodiment 1
3/ C
3n
4the typical scan electromicroscopic photograph of composite mesopore nanobelt, shows that prepared material is regular banded structure nano material.
Fig. 5 is prepared high-purity WO
3/ C
3n
4saturating look electromicroscopic photograph under the high-resolution multiplying power of composite mesopore nanobelt, the material prepared by display is polycrystalline WO
3and C
3n
4composite.
Fig. 6 and 7 is respectively Application Example WO of the present invention
3/ C
3n
4under composite mesopore nanobelt photoelectric transient state voltage-to-current response collection of illustrative plates and time m-current-responsive collection of illustrative plates.Fig. 6 and Fig. 7 presents the WO obtained by Application Example of the present invention
3/ C
3n
4composite mesopore nanobelt photoelectric significantly improves compared to one-component sample density of photocurrent under the same terms (illumination, voltage).
Fig. 8 is Application Example WO of the present invention
3/ C
3n
4m-open circuit voltage variations collection of illustrative plates time under composite mesopore nanobelt photoelectric transient state, shows WO
3/ C
3n
4composite mesopore nanobelt photoelectric is obviously trend towards negative value compared to one-component sample open-circuit voltage under illumination condition, shows just can carry out photoelectrocatalysis reaction under lower voltage conditions.
Fig. 9 is Application Example WO
3/ C
3n
4the impedance spectrum of composite mesopore nanobelt photoelectric, WO
3/ C
3n
4composite mesopore nanobelt photoelectric obviously diminishes compared to one-component sample semicircle radius, shows that Charge-transfer resistance significantly reduces, and is conducive to the high PhotoelectrocatalytiPerformance Performance of Charger transfer one.
Figure 10 is WO
3/ C
3n
4composite mesopore nanobelt photoelectric is at the Na of 0.5M
2sO
4in with the not special Schottky collection of illustrative plates under 1kHz illumination, WO
3/ C
3n
4composite mesopore nanobelt photoelectric is milder compared to one-component sample profile, proves that its carrier density is larger, is more conducive to forming larger photoelectric current.
In above-described embodiment and alternative thereof, during spinning liquid as precursor configuration, the consumption of absolute ethyl alcohol can also be 375mL, 380mL, 385mL, 390mL, 395mL, 400mL, 405mL, 410mL, 415mL, 420mL, 425mL, 430mL, 435mL, 440mL, 445mL, 450mL, 455mL, 460mL, 465mL, 470mL, 475mL, 480mL, 485mL, 490mL, 495mL, 505mL, 510mL, 515mL, 520mL, 525mL, 530mL, 535mL, 540mL, 545mL, 550mL, 555mL, 560mL, 565mL, 570mL, 575mL, 580mL, 585mL, 590mL, 595mL, 600mL, 605mL, 610mL, 615mL, 620mL, 625mL.
In above-described embodiment and alternative thereof, during spinning liquid as precursor configuration, when in mixed solution, the volume of emulsion is 1mL, the volume of DMF can also be 2mL, 2.5mL, 3mL, 3.5mL, 4.5mL, 5mL, 5.5mL, 6mL.
In above-described embodiment and alternative thereof, during spinning liquid as precursor configuration, WCl
6consumption can also be 1g, 1.2g, 1.5g, 1.7g, 1.8g, 1.9g, 2.1g, 2.2g, 2.3g, 2.4g, 2.5g, 2.6g, 2.8g, 3g, 3.1g, 3.3g, 3.5g, 3.8g, 4g.
In above-described embodiment and alternative thereof, during spinning liquid as precursor configuration, the consumption of PVP can also be 0.25g, 0.28g, 0.3g, 0.32g, 0.35g, 0.36g, 0.37g, 0.38g, 0.39g, 0.41g, 0.42g, 0.43g, 0.44g, 0.45g, 0.46g, 0.47g, 0.48g, 0.5g.
In above-described embodiment and alternative thereof, during spinning liquid as precursor configuration, the consumption of TS can also be 0.5g, 0.55g, 0.6g, 0.65g, 0.68g, 0.7g, 0.73g, 0.75g, 0.76g, 0.77g, 0.78g, 0.79g, 0.81g, 0.82g, 0.83g, 0.84g, 0.85g, 0.86g, 0.87g, 0.88g, 0.89g, 0.9g, 0.92g, 0.95g, 0.98g, 1g.
In above-described embodiment and alternative thereof, during electrostatic spinning, the spacing of anode and negative electrode can also be 15cm, 15.5cm, 16cm, 16.5cm, 17cm, 17.5cm, 18cm, 18.5cm, 19cm, 19.5cm, 20.5cm, 21cm, 21.5cm, 22cm, 22.5cm, 23cm, 23.5cm, 23.5cm, 24cm, 24.5cm, 25cm.The voltage of electrostatic spinning can also be 5kV, 5.5kV, 6kV, 6.5kV, 7kV, 7.5kV, 7.8kV, 8.2kV8.5kV, 9kV, 9.5kV, 10kV.
In above-described embodiment and alternative thereof, during electrostatic spinning, the bake out temperature be placed in by presoma nano wire in constant temp. drying box can also be 50 DEG C, 52 DEG C, 56 DEG C, 58 DEG C, 60 DEG C, 63 DEG C, 66 DEG C, 69 DEG C, 71 DEG C, 73 DEG C, 76 DEG C, 77 DEG C, 78 DEG C, 80 DEG C.Drying time can also be 8h, 8.2h, 9.6h, 8.8h, 10.3h, 10.6h, 11.9h, 12.1h, 12.3h, 12.6h, 13.7h, 13.4h, 14h.
In above-described embodiment and alternative thereof, during electrostatic spinning, precursor nano wire room temperature can also be dried in the shade, room temperature dries in the shade the time of aeration-drying at ambient temperature can for 16h, 17h, 18h, 19h, 20h, 21h, 22h, 23h, 24h, and ventilation wind speed can be 1m/s, 1.3m/s, 1.5m/s, 1.6m/s, 1.8m/s, 2m/s.
In above-described embodiment and alternative thereof, precursor nano wire is when high-temperature calcination, and calcining heat can also be 450 DEG C, 460 DEG C, 470 DEG C, 480 DEG C, 490 DEG C, 495 DEG C, 505 DEG C, 510 DEG C, 520 DEG C, 530 DEG C, 540 DEG C, 550 DEG C.Calcination time can also be 20min, 25min, 28min, 32min, 35min, 36min, 38min, 40min.Programming rate can also be 5 DEG C/min, 5.5 DEG C/min, 5.8 DEG C/min, 6 DEG C/min, 6.5 DEG C/min, 6.8 DEG C/min, 7.2 DEG C/min, 7.5 DEG C/min, 8 DEG C/min, 8.5 DEG C/min, 9 DEG C/min, 10 DEG C/min.
In above-described embodiment and alternative thereof, WO
3/ C
3n
4the composite mesopore nanobelt load capacity be carried on carrier is 3mg/cm
2, 3.5mg/cm
2, 4mg/cm
2, 4.5mg/cm
2, 4.8mg/cm
2, 4.9mg/cm
2, 5.1mg/cm
2, 5.2mg/cm
2, 5.3mg/cm
2, 5.4mg/cm
2, 5.5mg/cm
2, 5.8mg/cm
2, 6mg/cm
2, 6.5mg/cm
2, 7mg/cm
2, 7.5mg/cm
2, 8mg/cm
2.
In above-described embodiment and alternative thereof, WO
3/ C
3n
4the hole density of composite mesopore nanobelt can also be 0.01cm
3/ g, 0.02cm
3/ g, 0.03cm
3/ g, 0.04cm
3/ g, 0.045cm
3/ g, 0.047cm
3/ g, 0.048cm
3/ g, 0.05cm
3/ g, 0.06cm
3/ g, 0.07cm
3/ g, 0.08cm
3/ g.
In above-described embodiment and alternative thereof, WO
3/ C
3n
4the specific area of composite mesopore nanobelt can also be 8m
2/ g, 9m
2/ g, 10m
2/ g, 11m
2/ g, 12m
2/ g, 13m
2/ g, 13.5m
2/ g, 14m
2/ g, 15m
2/ g, 16m
2/ g, 17m
2/ g, 18m
2/ g, 19m
2/ g, 20m
2/ g.
In above-described embodiment and alternative thereof, WO
3/ C
3n
4the wide of composite mesopore nanobelt can also be 800nm, 810nm, 820nm, 830nm, 840nm, 850nm, 860nm, 870nm, 880nm, 890nm, 900nm, 910nm, 920nm, 930nm, 940nm, 950nm, 960nm, 970nm, 980nm, 990nm, 1 μm, thick can also be 152nm, 155nm, 158nm, 160nm, 162nm, 165nm, 166nm, 168nm, 170nm, 172nm, 175nm, 176nm, 178nm, 180nm, 182nm, 183nm, 185nm, 186nm, 188nm, 190nm, 192nm, 193nm, 195nm, 197nm, 198nm, 200nm.
In above-described embodiment and alternative thereof, conductive material can also be conductive rubber, conductive plastics, metal material.
In view of the present invention program's embodiment is numerous, each embodiment experimental data is huge numerous, be not suitable for particularize explanation herein, but the content of the required checking of each embodiment is all close with the final conclusion obtained, so do not illustrate one by one the checking content of each embodiment, only with embodiment 1, the excellent part of the present patent application is representatively described herein.
The non-limit part of technical scope midrange that this place embodiment is protected application claims, equally all in the scope of protection of present invention.
Specific embodiment described herein is only to the explanation for example of the present invention's spirit.Those skilled in the art can make various amendment or supplement or adopt similar mode to substitute to described specific embodiment, but can't depart from spirit of the present invention or surmount the scope that appended claims defines.
Although made a detailed description the present invention and quoted some specific embodiments as proof, to those skilled in the art, only otherwise it is obvious for leaving that the spirit and scope of the present invention can make various changes or revise.
Claims (7)
1. a high-purity WO
3/ C
3n
4composite mesopore nanobelt photoelectric, is characterized in that, during as photoelectric, and WO
3/ C
3n
4composite mesopore nanobelt is carried on carrier.
2. a kind of high-purity WO according to claim 1
3/ C
3n
4composite mesopore nanobelt photoelectric, is characterized in that, described WO
3/ C
3n
4the composite mesopore nanobelt load capacity be carried on carrier is 3-8mg/cm
2.
3. a kind of high-purity WO according to claim 1 and 2
3/ C
3n
4composite mesopore nanobelt photoelectric, is characterized in that, described WO
3/ C
3n
4composite mesopore nanobelt is polycrystalline WO
3/ C
3n
4composite mesopore nanobelt.
4. a kind of high-purity WO according to claim 1 and 2
3/ C
3n
4composite mesopore nanobelt photoelectric, is characterized in that, described WO
3/ C
3n
4the hole density of composite mesopore nanobelt is 0.01-0.08cm
3/ g.
5. a kind of high-purity WO according to claim 1 and 2
3/ C
3n
4composite mesopore nanobelt photoelectric, is characterized in that, described WO
3/ C
3n
4the specific area of composite mesopore nanobelt is 8-20m
2/ g.
6. a kind of high-purity WO according to claim 1 and 2
3/ C
3n
4composite mesopore nanobelt photoelectric, is characterized in that, described WO
3/ C
3n
4the wide of composite mesopore nanobelt is 800nm ~ 1 μm, and thick is 150 ~ 200nm.
7. a kind of high-purity WO according to claim 1 and 2
3/ C
3n
4composite mesopore nanobelt photoelectric, is characterized in that, described carrier is conductive material, and wherein conductive material comprises electro-conductive glass or conductive rubber or conductive plastics or metal material.
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| CN110743534A (en) * | 2019-11-28 | 2020-02-04 | 湖南大学 | Tungsten oxide core-shell structure composite photocatalyst and preparation method and application thereof |
| CN116020514A (en) * | 2023-01-04 | 2023-04-28 | 辽宁大学 | W (W) 18 O 49 /C/g-C 3 N 4 Heterojunction nanofiber photocatalyst and preparation method and application thereof |
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| CN105536842A (en) * | 2015-12-14 | 2016-05-04 | 西北师范大学 | Carbon nitride/tungsten trioxide nano composite material and preparation method and application thereof |
| CN105536842B (en) * | 2015-12-14 | 2017-11-10 | 西北师范大学 | A kind of carbonitride/tungsten trioxide nano composite and its preparation method and application |
| CN110743534A (en) * | 2019-11-28 | 2020-02-04 | 湖南大学 | Tungsten oxide core-shell structure composite photocatalyst and preparation method and application thereof |
| CN116020514A (en) * | 2023-01-04 | 2023-04-28 | 辽宁大学 | W (W) 18 O 49 /C/g-C 3 N 4 Heterojunction nanofiber photocatalyst and preparation method and application thereof |
| CN116020514B (en) * | 2023-01-04 | 2023-12-29 | 辽宁大学 | W (W) 18 O 49 /C/g-C 3 N 4 Heterojunction nanofiber photocatalyst and preparation method and application thereof |
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