CN105024130A - Lead bonding method for surface acoustic wave filter - Google Patents
Lead bonding method for surface acoustic wave filter Download PDFInfo
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- CN105024130A CN105024130A CN201510255895.8A CN201510255895A CN105024130A CN 105024130 A CN105024130 A CN 105024130A CN 201510255895 A CN201510255895 A CN 201510255895A CN 105024130 A CN105024130 A CN 105024130A
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Abstract
The invention provides a lead bonding method for a surface acoustic wave filter. The core of the method is the selection of a transitional film material and the thickness of the transitional film material. A conclusion is deduced from numerous experiment researches that a lead bonding tension enhancing effect and other mechanical properties are optimized when titanium is used and the thickness of the transitional film material is between 15 and 25 angstroms. The method may enhance adhesive force and solderability between a functional film and a piezoelectric substrate so as to solve a problem of internal lead bonding tension in the manufacture process of high-frequency surface acoustic wave filter, improve the internal lead bonding firmness in the surface acoustic wave filter, reduce internal lead bonding hidden dangers, and improve product qualified rate and reliability.
Description
Technical field
The present invention relates to semiconductor fabrication process, particularly relate to a kind of wire bonding method being applied to Surface Acoustic Wave Filter.
Background technology
Along with the fast development of surface acoustic wave techniques, SAW (Surface Acoustic Wave) device is applied in defence engineering widely, these fields to the technical indicator of SAW (Surface Acoustic Wave) device and reliability requirement also very high, Surface Acoustic Wave Filter lead is the important tie realizing SAW (Surface Acoustic Wave) device performance, therefore, more and more higher to the requirement of the designing and making technique of SAW (Surface Acoustic Wave) device chip, and the realization of device critical index and reliability be unable to do without the good combination of designing and making technique.
As everyone knows, stripping technology technology instead of traditional wet corrosion technique preferably as the technology of advanced person in ic manufacturing process, use stripping technology technology to realize qualification rate and reliability that the key of surface acoustic wave chip manufacturing and difficult point are just how to ensure device intraconnection bonding.
The product specification of stripping technology technology is used to judge with the size of the destructive tensile test value of leading wire bonding, find in the process of actual process exploitation, when the functional membrane thickness of high-frequency element is within 50 to 100nm, there is the easy rosin joint of solder joint or show the phenomenon that solder joint comes off when tensile test, device is caused to there is technique instability, the unwarrantable situation of reliability, use stripping technology fabrication techniques high-frequency sound surface wave device, need to solve device leading wire bonding pulling force problem, the pulling force how strengthening wire bonding then becomes the key promoting Surface Acoustic Wave Filter performance.
Summary of the invention
Technical problem to be solved by this invention is to invent a kind of wire bonding method being applied to Surface Acoustic Wave Filter, the present invention increases a kind of transition film before the functional membrane growth of traditional SAW (Surface Acoustic Wave) device production technology, the adhesive force of the functional membrane being attached to substrate surface is increased greatly, this measure improves the solderability of chip electrode, achieves the growth of the leading wire bonding reliability realizing device.
The present invention is achieved in that a kind of wire bonding method being applied to Surface Acoustic Wave Filter, comprises the following steps:
S1, make to carry out photoetching treatment with photoresist to substrate;
S2, to the substrate evaporation transition film after photoetching;
S3, to described substrate evaporation functional membrane;
The lithographic results of S4, inspection substrate and evaporation effect, and the substrate be up to the standards is cut, obtain the chip with predetermined function structure;
S5, described chip and shell are carried out sticky core operation by bonding agent, realize the physical connection of described chip and shell;
S6, by ultrasonic wave, wire bonding is carried out to described chip electrode and described shell electrode.
Preferably, BAK501 electron beam evaporation plating transition film is passed through in S2.
Preferably, described transition film material is titanium.
Preferably, described transition film thickness is 15-25 Ethylmercurichlorendimide.
Implement the present invention, there is following beneficial effect:
The invention provides a kind of wire bonding method being applied to Surface Acoustic Wave Filter, the core of described method is to increase a kind of transition film before functional membrane growth, and carry out the selection of transition film material and the selection of transition film thickness, through numerous experimental, obtain using titanium transition film can the conclusion of remarkable enhanced feature film adhesive force, and transition film thickness is when 15-25 Ethylmercurichlorendimide, wire bonding pulling force promotes, solderability promotes and rete adhesion effect reaches polyoptimal, thus solve the problem of leading wire bonding pulling force in high-frequency sound surface wave device manufacture craft, the target of the firmness strengthening SAW (Surface Acoustic Wave) device chip leading wire bonding can be realized, reduce product leading wire bonding hidden danger, thus improve qualification rate and the reliability of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment of the present invention Surface Acoustic Wave Filter chip and shell junction.
Wherein: 1-shell, 2-bonding agent, 3-substrate, 4-titanium film, 5-functional membrane, 6-Si-Al wire, 7-solder joint.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
Embodiments provide a kind of wire bonding method being applied to Surface Acoustic Wave Filter, comprise the following steps:
S1, make to carry out photoetching treatment with photoresist to substrate;
S2, to the substrate after photoetching by BAK501 electron beam evaporation plating transition titanium film, described titanium film thickness is 20 Ethylmercurichlorendimides;
S3, to described substrate evaporation functional membrane;
The lithographic results of S4, inspection substrate and evaporation effect, and the substrate be up to the standards is cut, obtain the chip with predetermined function structure;
S5, described chip and shell are carried out sticky core operation by bonding agent, realize the physical connection of described chip and shell;
S6, by ultrasonic wave, wire bonding is carried out to described chip electrode and described shell electrode.
Another embodiment, a kind of wire bonding method being applied to Surface Acoustic Wave Filter, comprises the following steps:
S1, make to carry out photoetching treatment with photoresist to substrate;
S2, to the substrate after photoetching by BAK501 electron beam evaporation plating transition titanium film, described titanium film thickness is 15 Ethylmercurichlorendimides;
S3, to described substrate evaporation functional membrane;
The lithographic results of S4, inspection substrate and evaporation effect, and the substrate be up to the standards is cut, obtain the chip with predetermined function structure;
S5, described chip and shell are carried out sticky core operation by bonding agent, realize the physical connection of described chip and shell;
S6, by ultrasonic wave, wire bonding is carried out to described chip electrode and described shell electrode.
Another embodiment, a kind of wire bonding method being applied to Surface Acoustic Wave Filter, comprises the following steps:
S1, make to carry out photoetching treatment with photoresist to substrate;
S2, to the substrate after photoetching by BAK501 electron beam evaporation plating transition titanium film, described titanium film thickness is 25 Ethylmercurichlorendimides;
S3, to described substrate evaporation functional membrane;
The lithographic results of S4, inspection substrate and evaporation effect, and the substrate be up to the standards is cut, obtain the chip with predetermined function structure;
S5, described chip and shell are carried out sticky core operation by bonding agent, realize the physical connection of described chip and shell;
S6, by ultrasonic wave, wire bonding is carried out to described chip electrode and described shell electrode.
According to said method, as shown in Figure 1, there is the titanium film 4 playing 20 Ethylmercurichlorendimides of transitional function between substrate 3 and functional membrane 5, described titanium film 4 plays the important function of the firmness strengthening wire bonding; Sticky core in S5 is had to operate the bonding agent used between described shell 1 and described substrate 3; Described Si-Al wire and described solder joint carry out wire bonding by ultrasonic wave, after tested, when there are titanium film 4 of 15 ~ 25 Ethylmercurichlorendimides, the weight of 13-18 gram can be born by described bonding place, when not having titanium film 4, described bonding place is merely able to the weight of bearing 7-11 gram.
Above disclosedly be only present pre-ferred embodiments, certainly can not limit the interest field of the present invention with this, therefore according to the equivalent variations that the claims in the present invention are done, still belong to the scope that the present invention is contained.
Claims (4)
1. be applied to a wire bonding method for Surface Acoustic Wave Filter, it is characterized in that, comprise the following steps:
S1, photoetching treatment is carried out to substrate;
S2, to the substrate evaporation transition film after photoetching;
S3, to described substrate evaporation functional membrane;
The lithographic results of S4, inspection substrate and evaporation effect, and the substrate be up to the standards is cut, obtain the chip with predetermined function structure;
S5, described chip and shell are carried out sticky core operation, realize the physical connection of described chip and shell;
S6, by ultrasonic wave, wire bonding is carried out to described chip electrode and described shell electrode.
2. a kind of wire bonding method being applied to Surface Acoustic Wave Filter according to claim 1, is characterized in that, by BAK501 electron beam evaporation plating transition film in S2.
3. a kind of wire bonding method being applied to Surface Acoustic Wave Filter according to claim 1 and 2, is characterized in that, described transition film material is titanium.
4. a kind of wire bonding method being applied to Surface Acoustic Wave Filter according to claim 3, is characterized in that, described transition film thickness is 15-25 Ethylmercurichlorendimide.
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| CN201510255895.8A CN105024130A (en) | 2015-05-19 | 2015-05-19 | Lead bonding method for surface acoustic wave filter |
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| CN201510255895.8A CN105024130A (en) | 2015-05-19 | 2015-05-19 | Lead bonding method for surface acoustic wave filter |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106908970A (en) * | 2017-03-06 | 2017-06-30 | 中国电子科技集团公司第二十六研究所 | Acousto-optic crsytal and transducer bonding structure |
| CN111591875A (en) * | 2020-06-23 | 2020-08-28 | 中国工程物理研究院机械制造工艺研究所 | Intelligent lifting appliance based on surface acoustic waves |
| CN112635948A (en) * | 2020-12-18 | 2021-04-09 | 南京锐码毫米波太赫兹技术研究院有限公司 | Ultra-low loss dielectric film in millimeter wave terahertz frequency band and surface metallization method |
| CN112757552A (en) * | 2020-12-18 | 2021-05-07 | 南京锐码毫米波太赫兹技术研究院有限公司 | Preparation method of dielectric substrate for millimeter wave terahertz frequency band |
| CN112848358A (en) * | 2020-12-18 | 2021-05-28 | 南京锐码毫米波太赫兹技术研究院有限公司 | Flexible dielectric film for millimeter wave terahertz frequency band and preparation method thereof |
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| CN103295918A (en) * | 2013-05-30 | 2013-09-11 | 江西联创特种微电子有限公司 | Manufacturing method of high-power field-effect transistor aluminum-gold bonding transition sheet |
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| CN103295918A (en) * | 2013-05-30 | 2013-09-11 | 江西联创特种微电子有限公司 | Manufacturing method of high-power field-effect transistor aluminum-gold bonding transition sheet |
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| 王祥邦等: ""利用钦过渡层及掺铜工艺改善声表面波器件的功率特性"", 《2009’中国西部地区声学学术交流会论文集》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106908970A (en) * | 2017-03-06 | 2017-06-30 | 中国电子科技集团公司第二十六研究所 | Acousto-optic crsytal and transducer bonding structure |
| CN106908970B (en) * | 2017-03-06 | 2019-09-13 | 中国电子科技集团公司第二十六研究所 | Acousto-optic crsytal and energy converter bonding structure |
| CN111591875A (en) * | 2020-06-23 | 2020-08-28 | 中国工程物理研究院机械制造工艺研究所 | Intelligent lifting appliance based on surface acoustic waves |
| CN112635948A (en) * | 2020-12-18 | 2021-04-09 | 南京锐码毫米波太赫兹技术研究院有限公司 | Ultra-low loss dielectric film in millimeter wave terahertz frequency band and surface metallization method |
| CN112757552A (en) * | 2020-12-18 | 2021-05-07 | 南京锐码毫米波太赫兹技术研究院有限公司 | Preparation method of dielectric substrate for millimeter wave terahertz frequency band |
| CN112848358A (en) * | 2020-12-18 | 2021-05-28 | 南京锐码毫米波太赫兹技术研究院有限公司 | Flexible dielectric film for millimeter wave terahertz frequency band and preparation method thereof |
| CN112848358B (en) * | 2020-12-18 | 2022-11-01 | 南京锐码毫米波太赫兹技术研究院有限公司 | Flexible dielectric film for millimeter wave terahertz frequency band and preparation method thereof |
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