CN105023858A - An LED device integrating graphene temperature sensing and a manufacturing method thereof - Google Patents
An LED device integrating graphene temperature sensing and a manufacturing method thereof Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
Abstract
The invention discloses an LED device integrating graphene temperature sensing and a manufacturing method thereof. A chip of the device includes an LED luminescent device and a temperature sensing device. The temperature sensing device is a grapheme device. The LED luminescent device and the temperature sensing device are in a back-to-back stacked structure. The LED luminescent device is in the upper position, and the temperature sensing device is in the lower position. The junction temperature of the LED luminescent device can be monitored by means of measuring changes of a graphene thin-film resistor in the temperature sensing device with temperature changes. The LED device integrating graphene temperature sensing of the invention can accurately and stably reflects the junction temperature of the LED device in real time, and can effectively raise the light extracting rate of the LED luminescent device and heat radiation of the whole device.
Description
Technical field
The present invention relates to a kind of luminescent device and manufacture method, especially relate to a kind of LED and manufacture method thereof of integrated Graphene temperature sensing.
Background technology
Light-emitting diode (light-emitting-diode, LED) be solid-state illumination cold light source of new generation, the feature such as its efficiency is high, the life-span is long, voltage is low, structure is simple, volume is little, lightweight, fast response time, anti-seismic performance are good and spectrum is full-color, makes it be widely used in various occasions such as backlight, display, stop-light and room lightings.Especially in general illumination, LED has obvious advantage than conventional light source, will become lighting source of future generation.
Along with the application of LED is constantly popularized, the integrity problem of LED is the key factor always restricting its development, especially with LED luminance and life-span closely bound up junction temperature measurement problem.
Different from traditional heat radiation light source, LED is a kind of electroluminescent device, and it directly converts electrical energy into luminous energy.But for the power-type LED of current technology maturation, its electro-optical efficiency only has about 30%, all the other energy of about 70% all convert heat energy to, cause the junction temperature of LED to raise.The rising of junction temperature, can cause semiconductor defect to breed the problems such as acceleration and encapsulating material degeneration, thus cause the photoelectric characteristic of device constantly change and decay.By the Real-Time Monitoring to junction temperature, be conducive to analyzing LED failure phenomenon and mechanism more exactly, improve LED reliability, and the junction temperature that monitoring protection improper use causes is too high, is conducive to the life and reliability improving LED.
Prior art generally adopts the external temperature sensor measuring ad-hoc location in encapsulation or light fixture to feed back the working temperature of LED.If Authorization Notice No. is that patent discloses of CN203118989U a kind ofly realizes the controlled LED encapsulation method of junction temperature.In that patent, near LED chip, package lens inside is placed a temperature sensor and is realized temperature feedback.But because the radiating condition encapsulated affects, measured temperature is not the temperature (virtual junction temperature can be higher) of LED knot place reality.Because Heat transmission needs the regular hour, external temperature sensor can not reflect LED chip junction temperature now in real time.Another kind of known technology is using LED self as temperature sensor, by the forward voltage reflection junction temperature size monitored under normal drive current or under small area analysis.But under normal drive current, LED can produce self-heating effect, and this will affect temperature measurement accuracy; Under small current driving, due in LED operating state and test mode transfer process, junction temperature reduces fast, and this also will affect thermometric accuracy.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art with not enough, the invention provides a kind of LED component of integrated Graphene temperature sensing.
Meanwhile, present invention also offers the manufacture method of the LED component of described integrated Graphene temperature sensing.
A kind of LED component of integrated Graphene temperature sensing comprises LED and temperature sensor on chip; This temperature sensor is a kind of graphene device.
Described LED and temperature sensor adopt back-to-back stacked on top structure, and top is the LED with formal dress chip structure, and below is temperature sensor; Temperature sensor lower surface is fixed on heat-radiating substrate and wiring on its electrode and substrate is electrically connected.
The structure of described temperature sensor comprises graphene film, two or more metal film electrode.
The substrate of described LED is insulation or highly resistant material, comprises sapphire or carborundum.
The number of plies of described graphene film comprises one deck, one in two layers or multilayer.
Described metal film electrode material comprises one in Pt, Al, Ag, Ni, Ti, Au or its combination.
The interval width of described two metal film electrodes, much smaller than the width of chip, is preferably 10-100 μm.
A kind of LED component manufacture method of integrated Graphene temperature sensing comprises the steps:
Substrate prepares LED;
At substrate back preparation temperature senser element;
Temperature sensor is connected with heat-radiating substrate.
The making step of described temperature sensor is
(1) graphene film is transferred to the back side of substrate;
(2) depositing metal films electrode on this graphene film, and in the middle of this metal film electrode, corrosion is carved disconnected, the positive and negative polarities of the metal film electrode difference formation temperature senser element of partition;
(3) in sample surfaces deposit passivation layer, and photoetching forms mask, removes mask, expose the contact hole of metal film electrode after corrosion and passivation layer;
The making step that described temperature sensor is connected with heat-radiating substrate is
(1) on heat-radiating substrate, insulating barrier and circuit layer is made respectively;
(2) adopt flip chip bonding or reflow method, engage corresponding with the circuit layer on heat-radiating substrate respectively for the positive and negative polarities of temperature sensor.
Compared with prior art, the present invention has following beneficial effect:
1, be integrated on same semiconductor chip by temperature sensor and LED, these two devices mutually electricity are independent, and the measurement of junction temperature does not affect the normal work of LED.Due to temperature sensor and LED lean on very near, and temperature sensor is between LED and heat-radiating substrate, and therefore within the extremely short time, the temperature of temperature sensor and LED reaches balance.This temperature sensor can monitor the junction temperature of LED in real time, accurately.
2, because Graphene has good thermal stability, this contributes to the stable work in work of temperature sensor.
The graphene film 3, with extraordinary light transmission and the high light reflectivity rate metal film electrode deposited thereon can reduce light absorption, are conducive to the light emission rate improving LED.
4, Graphene and metal film electrode all have good lateral thermal conductivity, and metal film electrode directly contacts with heat-radiating substrate.This contributes to reducing LED active area to the thermal resistance of heat-radiating substrate, adds the heat dissipation characteristics of LED.
5, LED and temperature sensor stacked on top, additionally do not increase device size.
Accompanying drawing explanation
Fig. 1 is the structural representation of the LED component of integrated Graphene temperature sensing of the present invention.
100:LED luminescent device; 200: temperature sensor; 101:P type electrode; 102:N type electrode; 103:P type semiconductor layer; 104: active layer; 105:N type semiconductor layer; 106: substrate; 201: graphene film; 202: metal film electrode; 203: passivation layer; 301: heat-radiating substrate; 302: substrate insulating layer; 303: substrate circuit layer; 401, the electrode terminal of 402:LED luminescent device; 403,404: the electrode terminal of temperature sensor; 501: salient point.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Refer to Fig. 1, it is the structural representation of the LED component of integrated Graphene temperature sensing of the present invention.The chip of this device comprises LED 100 and temperature sensor 200.This temperature sensor 200 is a kind of graphene devices.LED 100 and temperature sensor 200 adopt back-to-back stacked on top structure, and electricity is independent mutually, and top is the LED 100 with formal dress chip structure, and below is temperature sensor 200.Temperature sensor 200 lower surface is fixed on heat-radiating substrate 301 and wiring on its electrode and substrate is electrically connected.
The structure of this temperature sensor 200 comprises graphene film 201, two metal film electrode 202, passivation layer 203.Can by the junction temperature of the graphene film 201 resistance value variation with temperature relation Real-Time Monitoring LED 100 in measuring tempeature senser element 200.The increase of resistance value along with temperature in 300-500K temperature range of graphene film linearly reduces.During 300K, its resistance size is about 0.2-5 × 10^5 Ω, and its resistance-temperature coefficient is about 150-350 Ω/K.
The manufacture method of the LED component of the integrated Graphene temperature sensing of the present embodiment, comprises following steps:
(1) adopt MOCVD technology, grow n type semiconductor layer 105, active layer 104 and p type semiconductor layer 103 successively on substrate 106.The material of described substrate 106 is sapphire or carborundum;
(2) adopt ICP lithographic technique, be etched down to from the side of p type semiconductor layer 103 in n type semiconductor layer 105, form table top in the side of n type semiconductor layer 105;
(3) adopt sputtering technology, on p type semiconductor layer 103 and on the table top of n type semiconductor layer 105, prepare P-type electrode 101 and the N-type electrode 102 of LED 100 respectively;
(4) by photosensitive resin, one temporary base is connected with the wafer upper surface comprising LED 100.This photosensitive resin by the method cured resin of UV-irradiation, can play cementation.
(5) will the wafer substrate 106 thinning back side grinding and polishing of LED 100 be comprised, retain substrate thickness about 100 μm;
(6) graphene film 201 is transferred to the back side of substrate 106; The number of plies of described graphene film 201 can be single or multiple lift;
(7) depositing metal films electrode 202 on this graphene film 201, and in the middle of this metallic film, corrosion is carved disconnected, the positive and negative polarities of the metal film electrode 202 difference formation temperature senser element 200 of partition.The width of metal film electrode 202 intermediate etch, much smaller than the width of chip, is preferably 10-100 μm; Described metal film electrode 202 material is one in Pt, Al, Ag, Ni, Ti, Au or its combination;
(8) form passivation layer 203 at sample surfaces deposition of silica, and photoetching forms mask, removes mask, expose the contact hole of metal film electrode after corrosion and passivation layer; Described passivation layer 203 material also can be aluminium oxide or aluminium nitride;
(9) resin in LED 100 and temporary base are removed with corrosive liquid, temporary base can utilize again, cuts the waste;
(10) split, be separated disk, obtain the chip as LED in figure 100.
(11) on heat-radiating substrate 301, insulating barrier 302 and circuit layer 303 is made respectively, adopt flip chip bonding or reflow method, the positive and negative polarities of temperature sensor 200 are engaged by salient point 501 is corresponding with the circuit layer 303 of heat-radiating substrate 301 respectively, and electrode terminal 403 and 404 corresponding with on heat-radiating substrate 301 is respectively electrically connected;
(12) by Wire Bonding Technology, the positive and negative electrode 101 of LED 100 is connected with 102 corresponding with on heat-radiating substrate 301 respectively electrode terminal 401 and 402 are corresponding.
The LED component of the integrated Graphene temperature sensing completed according to embodiments of the invention can utilize the variation relation of the graphene film electrical resistance temperature in graphene temperature sensor part in real time, the junction temperature of accurate measurements LED component.Because Graphene has good thermal stability, this contributes to the job stability improving temperature sensor.And the high reflectance of the high printing opacity of Graphene, high thermal conduction characteristic and metallic film, high thermal conduction characteristic, contribute to the thermal resistance reducing whole LED component, increase its light emission rate.
Above-described specific embodiment; further detailed description has been carried out to object of the present invention, technical scheme and beneficial effect; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a LED component for integrated Graphene temperature sensing, is characterized in that: on chip, comprise LED and temperature sensor; This temperature sensor is a kind of graphene device.
2. the LED component of integrated Graphene temperature sensing according to claim 1, it is characterized in that: described LED and temperature sensor adopt back-to-back stacked on top structure, top is the LED with formal dress chip structure, and below is temperature sensor; Temperature sensor lower surface is fixed on heat-radiating substrate and wiring on its electrode and substrate is electrically connected.
3. the LED component of integrated Graphene temperature sensing according to claim 1 and 2, is characterized in that: the structure of described temperature sensor comprises graphene film, two or more metal film electrode.
4. the LED component of integrated Graphene temperature sensing according to claim 2, is characterized in that: the substrate of described LED is insulation or highly resistant material, comprises sapphire or carborundum.
5. the LED component of integrated Graphene temperature sensing according to claim 3, is characterized in that: the number of plies of described graphene film comprises one deck, one in two layers or multilayer.
6. the LED component of integrated Graphene temperature sensing according to claim 3, is characterized in that: described metal film electrode material comprises one in Pt, Al, Ag, Ni, Ti, Au or its combination.
7. the LED component of integrated Graphene temperature sensing according to claim 3, is characterized in that: the interval width of described two metal film electrodes, much smaller than the width of chip, is preferably 10-100 μm.
8. a LED component manufacture method for integrated Graphene temperature sensing, is characterized in that: comprise the steps:
Substrate prepares LED;
At substrate back preparation temperature senser element;
Temperature sensor is connected with heat-radiating substrate.
9. the LED component manufacture method of integrated Graphene temperature sensing according to claim 8, is characterized in that: the making step of described temperature sensor is
(1) graphene film is transferred to the back side of substrate;
(2) depositing metal films electrode on this graphene film, and in the middle of this metal film electrode, corrosion is carved disconnected, the positive and negative polarities of the metal film electrode difference formation temperature senser element of partition;
(3) in sample surfaces deposit passivation layer, and photoetching forms mask, removes mask, expose the contact hole of metal film electrode after corrosion and passivation layer;
10. the LED component manufacture method of integrated Graphene temperature sensing according to claim 8, is characterized in that: the making step that described temperature sensor is connected with heat-radiating substrate is
(1) on heat-radiating substrate, insulating barrier and circuit layer is made respectively;
(2) adopt flip chip bonding or reflow method, engage corresponding with the circuit layer on heat-radiating substrate respectively for the positive and negative polarities of temperature sensor.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105841739A (en) * | 2016-03-25 | 2016-08-10 | 南方科技大学 | Temperature and humidity sensor, preparation method thereof, and temperature and humidity measurement system with temperature and humidity sensor |
| CN106783653A (en) * | 2016-11-24 | 2017-05-31 | 天津津航计算技术研究所 | Chip internal temperature monitoring apparatus based on multi-chip stacking technique |
| CN108336065A (en) * | 2018-01-31 | 2018-07-27 | 韩德军 | A kind of automatic temperature-adjusting control LED component |
| CN109920904A (en) * | 2019-04-10 | 2019-06-21 | 黄山学院 | The radiator structure and processing technology of high-power GaN-based LED |
| WO2023108487A1 (en) * | 2021-12-15 | 2023-06-22 | 联嘉光电股份有限公司 | Temperature-measurable vertical light-emitting diode grain structure and temperature measurement correction method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103148952A (en) * | 2013-03-12 | 2013-06-12 | 上海第二工业大学 | Surface temperature test circuit based on graphene nanobelt and test method |
| US20140103298A1 (en) * | 2012-10-15 | 2014-04-17 | The Trustees Of The Stevens Institute Of Technolog | Graphene-based films in sensor applications |
| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
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2015
- 2015-06-05 CN CN201510308515.2A patent/CN105023858B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140103298A1 (en) * | 2012-10-15 | 2014-04-17 | The Trustees Of The Stevens Institute Of Technolog | Graphene-based films in sensor applications |
| CN103148952A (en) * | 2013-03-12 | 2013-06-12 | 上海第二工业大学 | Surface temperature test circuit based on graphene nanobelt and test method |
| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
Non-Patent Citations (1)
| Title |
|---|
| SHENGWEI CHANG ET AL.: "A Novel Silicon-Based LED Packaging Module With an Integrated Temperature Sensor", 《IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105841739A (en) * | 2016-03-25 | 2016-08-10 | 南方科技大学 | Temperature and humidity sensor, preparation method thereof, and temperature and humidity measurement system with temperature and humidity sensor |
| CN105841739B (en) * | 2016-03-25 | 2018-10-26 | 南方科技大学 | Temperature Humidity Sensor and preparation method thereof, temperature/humidity measuring system |
| CN106783653A (en) * | 2016-11-24 | 2017-05-31 | 天津津航计算技术研究所 | Chip internal temperature monitoring apparatus based on multi-chip stacking technique |
| CN106783653B (en) * | 2016-11-24 | 2019-06-07 | 天津津航计算技术研究所 | Chip interior temperature monitoring apparatus based on multi-chip stacking technique |
| CN108336065A (en) * | 2018-01-31 | 2018-07-27 | 韩德军 | A kind of automatic temperature-adjusting control LED component |
| CN109920904A (en) * | 2019-04-10 | 2019-06-21 | 黄山学院 | The radiator structure and processing technology of high-power GaN-based LED |
| CN109920904B (en) * | 2019-04-10 | 2023-11-10 | 黄山学院 | Heat radiation structure of high-power GaN-based LED and processing technology |
| WO2023108487A1 (en) * | 2021-12-15 | 2023-06-22 | 联嘉光电股份有限公司 | Temperature-measurable vertical light-emitting diode grain structure and temperature measurement correction method therefor |
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| CN105023858B (en) | 2018-10-09 |
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