CN105022235B - The manufacture method that EUV light source with half-wave band structure collects mirror - Google Patents
The manufacture method that EUV light source with half-wave band structure collects mirror Download PDFInfo
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Abstract
The manufacture method that EUV light source with half-wave band structure collects mirror, is related to EUV light source and collects mirror field, solve the high cost of existing method presence, while can also introduce the problem of unnecessary pattern errors.The method includes：Substrate cleaning, gluing, exposure, baking, development, etch, remove photoresist, plated film；During exposure, exposure light source, beam expander, source-collector mirror, curved surface half-reflecting half mirror and curved reflector are set gradually along optical axis, the focus of curved surface half-reflecting half mirror and curved reflector is overlapped with two focuses of the ellipsoid place ellipsoid of source-collector mirror respectively, and the focal length of the ellipsoid place ellipsoid of source-collector mirror is equal to the odd-multiple of the optical maser wavelength a quarter of exposure light source output；Interfered by two coherent point light sources and interference fringe is formed on the ellipsoid of source-collector mirror, make coating photosensitive to complete exposure.Present invention process is simple, low cost, does not have mask plate to make the error for introducing, improves the spectrum purification efficiency of half-wave band structure.
Description
Technical field
The present invention relates to extreme ultraviolet (Extreme Ultraviolet, EUV) source-collector mirror technical field, and in particular to
The manufacture method that a kind of EUV light source with half-wave band structure collects mirror.
Background technology
In recent years, extreme ultraviolet photolithographic (EUV Lithograph, EUVL) technology is widely developed.EUVL is used
13.5nm wavelength light sources can realize more than ten nanometers as service band, or even several nanometers of lithographic line width, and then greatly increase
Plus the integrated level of integrated circuit, miniaturization to electronic equipment, low-power consumption development are extremely important.
Extreme ultraviolet photolithographic equipment is typically made up of EUV light source, illuminator and projection objective.Wherein, EUV light source
There is provided the extreme ultraviolet radiation needed for photolithographic exposure.It is to realize extreme ultraviolet with high-power and high-purity spectrum EUV light source
The precondition of photoetching volume production, and one of difficult point of extreme ultraviolet lithography at present.
At present, extreme ultraviolet radiation can be produced by synchrotron radiation and high-temperature high-density plasma radiation.In Practical Project
In, the EUV light source radiated based on high-temperature high-density plasma is more had practical value.Excited according to the difference of plasma
Principle, EUV light source can be divided into discharge plasma (Discharge Produced Plasma, DPP) light source and laser again
Plasma (Laser Produced Plasma, LPP) light source two types.The former is excited using interelectrode electrion
Plasma, but as plasma distance electrode is nearer, hot injury is produced to electrode inevitably and fragment clashes into, limit
The application of DPP light sources is made.The latter can be realized high-power, stable using driving laser bombardment target to excite plasma
Extreme ultraviolet is exported, in recent years by extensive research and application.
The LPP light sources for being applied to extreme ultraviolet lithography are typically made up of driving light source, target system and collection system.Its
In, drive the general selection of light source realize the gas laser of high-power output, such as CO2Laser instrument etc.；Target system is by target
Material and target transmission mechanism composition, common target have Sn droplet targets, Xe gas targets etc.；Collection system is to collect plasma spoke
The extreme ultraviolet light beam of injection, and the device of intermediate focus (Intermediate Focus, IF) is converged to, generally use plating
The ellipsoid for having extreme ultraviolet reflectance coating is collected mirror to realize this function.Meanwhile, extreme ultraviolet photolithographic is set in order to reduce fragment
The damage of standby middle illuminator, improves the spectral purity of emergent light, can also arrange in LPP light sources except fragment system and spectroscopic pure
Change system etc..In LPP light sources, Jing ellipsoids collect the light of mirror collection includes extreme ultraviolet, DUV (Deep
Ultraviolet, DUV) and come self-driven light source infrared light (Infrared, IR).Wherein, the heat effect that infrared light is produced
The service life of optical element in meeting serious curtailment extreme ultraviolet photolithographic equipment.In this regard, research worker proposes various solutions.
2014, Dutch scholar Muharrem Bayraktar et al. devised a kind of with Fresnel half-wave band structure
(2014) OPTICS EXPRESS, 22 (7), 8633-8639, make infrared light " gather again using zone plate principle to source-collector mirror
It is burnt ", the application point for driving light source and target system is converged to, suppression of the exit end to infrared light is realized, meanwhile, it is capable to promote
Plasma is excited.This method is novel effectively, while other extreme ultraviolets with half-wave band structure can also be derived
Collect the design of mirror in source.
The making of mirror is collected with regard to this EUV light source with micro structures such as half-wave zones, usually using projection lithography
Method：First, half-wave zone pattern is designed by calculating, and is fabricated to mask plate；Then pass through mask plate using exposure light source
Irradiation scribbles the collection mirror of photoresist, makes photo resist photosensitive, forms half-wave zone pattern；Again through plated film or etching and wash glue
The collection mirror of the EUV light source with half-wave band structure is made etc. technique.Obviously, collect mirror on half-wave zone pattern greatly according to
Rely the quality in mask plate.Cost of manufacture is this not only adds, while can also introduce unnecessary pattern errors, light source effect is reduced
Rate.Diamond turning (Diamond Turning) method can also be used to make micro structure, but manufacturing procedure on mirror is collected
Complexity, fabrication cycle length, there is effective application that the factors such as error constrain this method.
In sum, in view of the EUV light source with half-wave band structure collects the practical value of mirror, one kind is in extreme ultraviolet
On source-collector mirror, the simple method for accurately making the half-wave band structure with spectrum purification function is with important reality meaning
Justice.
The content of the invention
The high cost that the method for mirror is present is collected in order to solve the existing EUV light source that makes, while can also introduce unnecessary
Pattern errors problem, the present invention provides the manufacture method that a kind of EUV light source with half-wave band structure collects mirror, can
The half-wave band structure with spectrum purification function make on mirror with simple accurately collection in EUV light source.
The present invention is as follows by solving the technical scheme that technical problem is adopted：
The manufacture method that the EUV light source with half-wave band structure of the present invention collects mirror, comprises the following steps：
Step one, substrate cleaning
Ultrasound wave cleaning, ethanol drying are carried out to source-collector mirror using ultrasonic washing unit, surface contaminant is removed；
Step 2, gluing
It is spin-coated on the ellipsoid of source-collector mirror under exposure light source irradiation and can produces the material with function against corrosion,
Form coating；
Step 3, exposure
Build exposure light path：Exposure light source, beam expander, source-collector mirror, curved surface half-reflecting half mirror are set gradually along optical axis
And curved reflector, the focus of the focus and curved reflector of curved surface half-reflecting half mirror ellipsoid respectively with source-collector mirror
First focus F of face place ellipsoid1With the second focus F2Overlap, the curved surface half-reflecting half mirror can be to flat with curved reflector
Row light carries out reflecting to form spherical wave, and the focal length of the ellipsoid place ellipsoid of the source-collector mirror is equal to exposure light source output
The odd-multiple of optical maser wavelength a quarter；
Interfered by two coherent point light sources and interference fringe is formed on the ellipsoid of source-collector mirror, make the painting on ellipsoid
Layer it is photosensitive come complete exposure：The laser of the exposure light source output forms parallel incident illumination, incident illumination Jing after beam expander is expanded
Through hole in the middle of Jing source-collector mirrors is radiated at curved surface half-reflecting half mirror surface, and the curved surface half-reflecting half mirror is to a part of incident
Light reflects to form the first reflected light i.e. the first spherical wave, and another part incident illumination is transmitted to form transmitted light and be radiated at camber reflection
Mirror surface, the curved reflector reflect to form the second reflected light i.e. the second spherical wave to transmitted light, first reflected light and
Second reflected light is radiated on the ellipsoid of source-collector mirror；The centre of sphere of first spherical wave and curved surface half-reflecting half mirror
First focus F of focus, source-collector mirror1Overlap, the centre of sphere of second spherical wave is received with the focus of curved reflector, light source
Second focus F of collection mirror2Overlap, first spherical wave and the second spherical wave are interfered on the ellipsoid of source-collector mirror
Formed interference fringe, while make the coating on ellipsoid it is photosensitive complete exposure；
Step 4, baking
Source-collector mirror after exposure is placed and is toasted in an oven；
Step 5, development
Using solvent clean source-collector mirror, the coating of unexposed area on the ellipsoid of source-collector mirror is removed；
Step 6, etching
Using etching liquid on the ellipsoid with the patterned source-collector mirror of half-wave etch away sections substrate, etching is thick
Spend a quarter of the optical maser wavelength for exposure light source output；
Step 7, remove photoresist
Using equipment for burning-off photoresist by plasma remove source-collector mirror ellipsoid on it is exposed after coating, make half-wave band structure
Expose；
Step 8, plated film
One layer of extreme ultraviolet reflectance coating is coated with the ellipsoid of the source-collector mirror with half-wave band structure, completes have half
The EUV light source of band structure collects the making of mirror.
Further, in step 2, the material with function against corrosion can be produced under exposure light source irradiation for photosensitive material
Material or sensible heat material.
Further, the sensible heat material be using heat cross-linking CTP material, by infrared absorbing dye, can
Dissolubility phenolic resin, novolac resin and salt composition.
Further, the curved surface half-reflecting half mirror is identical with Curved reflecting mirror structure, be one kind by CO2Laser-light transparent
Material made by paraboloidal mirror；The curved surface half-reflecting half mirror surface is coated with part reflective semitransparent film, the curved surface half-reflecting half mirror
The diameter of the directional light expanded more than Jing beam expanders by bore；The curved mirror surfaces are coated with high-reflecting film.
Further, in step 4, baking condition is：1min is toasted at 100 DEG C.
Further, the curved surface half-reflecting half mirror has four kinds with the modes of emplacement of curved reflector, respectively：Curved surface half
Second inner surface of first inner surface and curved reflector of anti-pellicle mirror is simultaneously relative with the ellipsoid of source-collector mirror；Curved surface
Second outer surface of first outer surface and curved reflector of half-reflecting half mirror is simultaneously relative with the ellipsoid of source-collector mirror；It is bent
Second outer surface of first inner surface and curved reflector of face half-reflecting half mirror is simultaneously relative with the ellipsoid of source-collector mirror；
Second inner surface of first outer surface and curved reflector of curved surface half-reflecting half mirror ellipsoid phase simultaneously with source-collector mirror
It is right.
Further, the exposure light source adopts CO2Laser instrument, CO2Optical maser wavelength is 10.6 μm.
Further, the solvent selects dilute sodium silicate solution.
Further, the etching liquid selects dilute HNO3With the mixed solution of HF.
Further, the extreme ultraviolet reflectance coating is Mo/Si multilayer films, and cycle 6.9nm is made up of 40～50 cycles.
Further, also including step 9, detection：
If A, B are two points on the ellipsoid of source-collector mirror, its midpoint A is located at through hole center, and is located at primary optical axis
With the intersection of ellipsoid, point B is on ellipsoid, and point A misaligned with point B；
When the ellipsoid of source-collector mirror has suitable half-wave band structure, source-collector mirror by infrared light refocusing,
So as to realize the spectrum purification function at intermediate focus IF, therefore, half-wave band structure should be made to meet the reflector space of infrared light：
PathWith pathOptical path difference be exposure light source output laser half-wavelength odd-multiple, such as formula (one) institute
Show：
In formula (), F1First focus of the ellipsoid being located for the ellipsoid of source-collector mirror, λ are exposure light source output
Optical maser wavelength, n are natural number；
Two coherent point light sources are located at the first focus F respectively1With the second focus F2, two coherent point light sources are formed on ellipsoid
Interference fringe, wherein bright fringess meet：PathWith pathOptical path difference be exposure light source output laser wavelength
Integral multiple, as shown in formula (two)：
In formula (two), F2Second focus of the ellipsoid being located for the ellipsoid of source-collector mirror, and exposure light source output
Intermediate focus IF at end, λ are the optical maser wavelength of exposure light source output, and m is natural number.
In the ellipsoid that the ellipsoid of source-collector mirror is located, there is following geometrical relationship：The ellipsoid of source-collector mirror
On the ellipsoid at place o'clock to the first focus F1, the second focus F2Apart from sum be constant 2a, a for source-collector mirror ellipsoid
The long axial length of the ellipsoid that face is located, as shown in formula (three)：
Additionally, also there is the relational expression as shown in formula (four)：
In formula (four), focal lengths of the f for the ellipsoid at the ellipsoid place of source-collector mirror；
Can be drawn by formula (), formula (two), formula (three) and formula (four)：
Due to the optical maser wavelength four that the focal length of the ellipsoid at the ellipsoid place of the source-collector mirror is exposure light source output
/ mono- odd-multiple, i.e.,：
In formula (six), focal lengths of the f for the ellipsoid at the ellipsoid place of source-collector mirror, λ is the laser of exposure light source output
Wavelength, l are natural number；
Then can be drawn by formula (five) and formula (six)：
By the first focus F in the ellipsoid that the ellipsoid of the source-collector mirror is located1, the second focus F2And on ellipsoid
The triangle Δ F that point B is constituted1BF2InThat is 2l+1 ＞ 2m；
In sum, interfere the candy strip and institute constructed on the ellipsoid of source-collector mirror using two coherent point light sources
The half-wave zone structure plan of needs is consistent.
The invention has the beneficial effects as follows：
1st, the present invention is exposed by the interference fringe of two point sources, instead of the system of mask plate in existing photoetching process
Make and use, and processing technology need not be simplified using illuminator and projection objective system in projection lithography etc., while
Reduce cost of manufacture.
2nd, due to the interference fringe and required half-wave band structure complete of the exposure light path formation used in the present invention
Cause, do not have mask plate to make the error for introducing, it is thus possible to be greatly enhanced EUV light source and collect half-wave zone knot in mirror system
The spectrum purification efficiency of structure.
3rd, the present invention utilizes principle of interference, accurately and effectively can construct half-wave zone on the ellipsoid of source-collector mirror
Pattern, can prepare the half-wave band structure with spectrum purification function with similar photoetching process combination, and improve half-wave zone
The spectrum purification efficiency of structure.
Description of the drawings
Fig. 1 is the structural representation that typical EUV light source collects mirror.
Fig. 2 is two point sotuce exposure light path schematic diagrams.
Fig. 3 is effect schematic diagram of curved surface half-reflecting half mirror (curved reflector) inner surface to light.
Fig. 4 is effect schematic diagram of curved surface half-reflecting half mirror (curved reflector) outer surface to light.
In Fig. 1：1st, source-collector mirror, 2, ellipsoid, 3, primary optical axis, 4, curved surface half-reflecting half mirror, 5, curved reflector, 6,
Exposure light source, 7, beam expander, 8, through hole, the 9, first inner surface, the 9 ', second inner surface, the 10, first outer surface, outside 10 ', second
Surface, 11, incident illumination, 11 ', transmitted light, 12, incident illumination equiphase surface, 12 ', transmitted light equiphase surface, the 13, first reflected light, 13 ',
Second reflected light, the 14, first reflected light equiphase surface, the 14 ', second reflected light equiphase surface.
Specific embodiment
The present invention is described in further details below in conjunction with accompanying drawing.
The manufacture method that the EUV light source with half-wave band structure of the present invention collects mirror, especially by following steps reality
It is existing：
Step one, substrate cleaning
Ultrasound wave cleaning, ethanol drying etc. are carried out to source-collector mirror 1 using ultrasonic washing unit, surface contamination is removed
Thing.
In the method for the present invention, using existing typical source-collector mirror 1 as substrate, its structure such as Fig. 1 and Fig. 2 institutes
Show.The minute surface of source-collector mirror 1 is ellipsoid 2, and ellipsoid 2 is processed through design, and Frequency Surface roughness is about
0.1nm.The center of source-collector mirror 1 is through hole 8.F1、F2For the first focus of the 2 place ellipsoid of ellipsoid of source-collector mirror 1
(when i.e. source-collector mirror 1 works, driving the application point of light source and target) and the second focus (intermediate focus IF), the first focus
F1With the second focus F2It is respectively positioned on the primary optical axis 3 of source-collector mirror 1.A, B are two on the ellipsoid 2 of source-collector mirror 1
Point, its midpoint A are located at 8 center of through hole, and positioned at the intersection of primary optical axis 3 and ellipsoid 2, point B on ellipsoid 2, and point A and
B is misaligned for point.Source-collector mirror 1 diameter 600mm, thickness 30mm, it is 5sr effectively to collect aperture, and center is the logical of diameter 50mm
Hole 8.Source-collector mirror 1 is made from the glass material with ultra-low thermal expansion such as ULE.
Step 2, gluing
Photoetching work is functionally similar to (using the sensitive material with function against corrosion can be produced under 6 irradiation of exposure light source
The negative photoresist that skill is used) the spin coating formation light sensitive layer on the ellipsoid 2 of source-collector mirror 1；
Or, (light is functionally similar to using the sensible heat material with function against corrosion can be produced under 6 irradiation of exposure light source
The negative photoresist that carving technology is used) the spin coating formation sensible heat coating on the ellipsoid 2 of source-collector mirror 1；
The range of coat thicknesses formed on the ellipsoid 2 of source-collector mirror 1 is：Spin coating thickness and the material kind for being used
Class, the output of exposure light source 6 optical maser wavelength it is relevant, typically in several microns to several microns of zero point.
In present embodiment, the described sensible heat material with function against corrosion can adopt heat cross-linking CTP
Material, is typically made up of infrared absorbing dye, resol resin, novolac resin and salt etc..
Step 3, exposure
By building exposure light path, while interfered using two coherent point light sources being formed on the ellipsoid 2 of source-collector mirror 1
Interference fringe, and make the coating on ellipsoid 2 photosensitive to complete exposing operation.
The exposure light path built is as shown in Fig. 2 including exposure light source 6, beam expander 7, source-collector mirror 1, curved surface half anti-half
Lens 4 and curved reflector 5, exposure light source 6, beam expander 7, curved surface half-reflecting half mirror 4 and curved reflector 5 are sequentially placed in light
Source is collected on the primary optical axis 3 of mirror 1, i.e., exposure light source 6, beam expander 7, source-collector mirror 1, curved surface half-reflecting half mirror 4 and curved surface are anti-
Penetrate the main shaft of mirror 5 on the same line, and curved surface half-reflecting half mirror 4 is near the ellipsoid 2 of source-collector mirror 1.Source-collector mirror 1
2 place ellipsoid of ellipsoid focal length be equal to exposure light source 6 output optical maser wavelength a quarter odd-multiple.
In present embodiment, described curved surface half-reflecting half mirror 4 be one kind by Si etc. to CO2The material of laser-light transparent is made
Paraboloidal mirror, surface is coated with part reflective semitransparent film.4 bore of curved surface half-reflecting half mirror is flat slightly larger than what Jing beam expanders 7 were expanded
The diameter (about 5mm) of row light.The focus of curved surface half-reflecting half mirror 4 and the first focus F of source-collector mirror 11Overlap.By placing
First focus F of the curved surface half-reflecting half mirror 4 in source-collector mirror 11Place forms a point source.
In present embodiment, described curved reflector 5 has identical structure with curved surface half-reflecting half mirror 4, described
Curved reflector 5 and one kind are by Si etc. to CO2Paraboloidal mirror made by the material of laser-light transparent, surface is coated with high-reflecting film.It is bent
The focus of face reflecting mirror 5 and the second focus F of source-collector mirror 12Overlap.By placing curved reflector 5 in source-collector mirror 1
The second focus F2Place forms another point source.
In present embodiment, the driving light source that described exposure light source 6 is used when being worked with EUV light source is consistent, typically
Using CO2Laser instrument, CO2Optical maser wavelength is 10.6 μm.When exposure light source 6 adopts CO2During laser instrument, in step 2, receive in light source
About several microns of the thickness of the coating formed on the ellipsoid 2 of collection mirror 1.
In present embodiment, in order that curved surface half-reflecting half mirror 4 and curved reflector 5 can normal work, in exposure
The laser beam expanding that exposure light source 6 is exported using beam expander 7 by 6 outfan of light source forms diameter 5mm left to a diameter of 5mm or so
Incident illumination 11 that is right and being parallel to each other.
In present embodiment, curved surface half-reflecting half mirror 4 has four kinds with the modes of emplacement of curved reflector 5, respectively：Curved surface
Second inner surface 9 ' of first inner surface 9 and curved reflector 5 of half-reflecting half mirror 4 is while ellipsoid 2 with source-collector mirror 1
Relatively；Second outer surface 10 ' of first outer surface 10 and curved reflector 5 of curved surface half-reflecting half mirror 4 is while and source-collector
The ellipsoid 2 of mirror 1 is relative；Second outer surface 10 ' of first inner surface 9 and curved reflector 5 of curved surface half-reflecting half mirror 4 while
It is relative with the ellipsoid 2 of source-collector mirror 1；In the second of first outer surface 10 and curved reflector 5 of curved surface half-reflecting half mirror 4
Surface 9 ' is while relative with the ellipsoid 2 of source-collector mirror 1.
It is illustrated below.First inner surface 9 and the second inner surface 9 ' of curved reflector 5 of curved surface half-reflecting half mirror 4
It is simultaneously relative with the ellipsoid 2 of source-collector mirror 1.The laser of the output of exposure light source 6 forms straight Jing after beam expander 7 is expanded
The directional light of footpath 5mm or so, that is, the incident illumination 11 being parallel to each other, as shown in figure 3, more incident light 11 forms incident illumination equiphase surface
12, incident illumination 11 is radiated on the first inner surface 9 of curved surface half-reflecting half mirror 4 through the through hole 8 in the middle of source-collector mirror 1, bent
Half-reflecting half mirror 4 surface in face is coated with part reflective semitransparent film, and a part of incident illumination 11 of curved surface half-reflecting half mirror 4 pairs is reflected to form
First i.e. the first spherical wave of reflected light 13, the first reflected light of multi beam 13 form the first reflected light equiphase surface 14, the first reflected light 13
It is radiated on the ellipsoid 2 of source-collector mirror 1, the centre of sphere of described the first spherical wave and the focus of curved surface half-reflecting half mirror 4, light
Collect the first focus F of mirror 1 in source1Overlap；Curved surface half-reflecting half mirror 4 carries out transmission and forms transmission to the incident illumination 11 of another part
Light 11 ', transmitted light 11 ' are radiated on the second inner surface 9 ' of the curved reflector 5 for being placed in 4 rear of curved surface half-reflecting half mirror, bent
Reflecting mirror 5 surface in face is coated with high-reflecting film, and curved reflector 5 carries out reflecting to form the second reflected light 13 ' i.e. second to transmitted light 11 '
Spherical wave, the second reflected light of multi beam 13 ' form the second reflected light equiphase surface 14 ', and the second reflected light 13 ' is radiated at source-collector mirror
On 1 ellipsoid 2, the centre of sphere of described the second spherical wave and the focus of curved reflector 5, the second focus of source-collector mirror 1
F2Overlap；First spherical wave and the second spherical wave interfere and are formed interference fringe on the ellipsoid 2 of source-collector mirror 1,
Make the coating on ellipsoid 2 photosensitive, complete exposing operation.
Second outer surface 10 ' of first outer surface 10 and curved reflector 5 of curved surface half-reflecting half mirror 4 is while receive with light source
The ellipsoid 2 of collection mirror 1 is relative.The laser of the output of exposure light source 6 forms the flat of diameter 5mm or so Jing after beam expander 7 is expanded
Row light, that is, the incident illumination 11 being parallel to each other, as shown in figure 4, more incident light 11 forms incident illumination equiphase surface 12,11 Jing of incident illumination
The through hole 8 crossed in the middle of source-collector mirror 1 is radiated on the first outer surface 10 of curved surface half-reflecting half mirror 4, curved surface half-reflecting half mirror 4
Surface is coated with part reflective semitransparent film, and a part of incident illumination 11 of curved surface half-reflecting half mirror 4 pairs carries out reflecting to form the first reflected light 13
That is the first spherical wave, the first reflected light of multi beam 13 form the first reflected light equiphase surface 14, and the first reflected light 13 is radiated at light source receipts
On the ellipsoid 2 of collection mirror 1, the centre of sphere of described the first spherical wave and the focus of curved surface half-reflecting half mirror 4, source-collector mirror 1
First focus F1Overlap；Curved surface half-reflecting half mirror 4 carries out transmission to the incident illumination 11 of another part and forms transmitted light 11 ', transmission
Light 11 ' is radiated on the second outer surface 10 ' of the curved reflector 5 for being placed in 4 rear of curved surface half-reflecting half mirror, curved reflector 5
Surface is coated with high-reflecting film, and curved reflector 5 carries out reflecting to form the second spherical wave of the second reflected light 13 ' i.e. to transmitted light 11 ', many
The second reflected light of beam 13 ' forms the second reflected light equiphase surface 14 ', and the second reflected light 13 ' is radiated at the ellipsoid of source-collector mirror 1
On 2, the centre of sphere of described the second spherical wave and the focus of curved reflector 5, the second focus F of source-collector mirror 12Overlap；The
One spherical wave and the second spherical wave interfere and are formed interference fringe on the ellipsoid 2 of source-collector mirror 1, make ellipsoid 2
On coating it is photosensitive, complete exposing operation.
Step 4, baking
Source-collector mirror 1 after exposure is placed in an oven, 1min or so is toasted at 100 DEG C.
Step 5, development
Using solvent clean source-collector mirror 1, the coating of unexposed area on the ellipsoid 2 of source-collector mirror 1 is removed.Institute
Can be from dilute sodium silicate solution etc. with solvent.
Step 6, etching
After development, portion is etched away using etching liquid on the ellipsoid 2 with the patterned source-collector mirror of half-wave 1
Divide substrate.Etch thicknesses are a quarter of the optical maser wavelength of the output of exposure light source 6, and according to principle of interference, the etch thicknesses can
To realize the contrast of the maximum of infrared light reflection light.Etching liquid used can select dilute HNO3With the mixed solution of HF.
Step 7, remove photoresist
Using equipment for burning-off photoresist by plasma, remove it is exposed on the ellipsoid 2 of source-collector mirror 1 after coating, make half-wave zone
Structure is exposed.
Step 8, plated film
One layer of extreme ultraviolet reflectance coating is coated with the ellipsoid 2 of the source-collector mirror 1 with half-wave band structure, you can complete
EUV light source with half-wave band structure collects the making of mirror.Described extreme ultraviolet reflectance coating, generally Mo/Si multilayer films,
Cycle 6.9nm, is typically made up of 40～50 cycles.
Step 9, detection
According to Muharrem Bayraktar document (OPTICS EXPRESS, 22 (7), 8633-8639,2014) in
Discuss, when the ellipsoid 2 of source-collector mirror 1 has suitable half-wave band structure, infrared light " is gathered by source-collector mirror 1 again
It is burnt ", so as to realize (i.e. the second focus F at intermediate focus IF2Place) spectrum purification function.Therefore, as shown in figure 1, half should be made
Band structure is met to the reflector space of infrared light：PathWith pathOptical path difference be exposure light source 6 output
The odd-multiple of the half-wavelength of laser, as shown in formula ()：
In formula (), F1First focus of the ellipsoid being located for the ellipsoid 2 of source-collector mirror 1, and source-collector mirror 1
The application point of light source and target is driven during work, is the source point of extreme ultraviolet radiation；λ is the optical maser wavelength of the output of exposure light source 6；
N is natural number.
The present invention constructs candy strip in ellipsoid 2 using the interference of two coherent point light sources.As shown in figure 1, two coherent points
Light source is located at the first focus F respectively1With the second focus F2.Two coherent point light sources form interference fringe on ellipsoid 2, wherein bright
Striped meets：PathWith pathOptical path difference be exposure light source 6 output laser wavelength integral multiple, such as formula
(2) shown in：
In formula (two), F2It is defeated for the second focus of the ellipsoid at the place of ellipsoid 2 of source-collector mirror 1, and exposure light source 6
Go out intermediate focus IF at end；λ is the optical maser wavelength of the output of exposure light source 6；M is natural number.
In the ellipsoid that the ellipsoid 2 of source-collector mirror 1 is located, also there is following geometrical relationship：Source-collector mirror 1 it is ellipse
On the ellipsoid that sphere 2 is located o'clock to the first focus F1, the second focus F2Apart from sum be constant 2a, a be source-collector mirror 1
Ellipsoid 2 be located ellipsoid long axial length, as shown in formula (three)：
Additionally, also there is the relational expression as shown in formula (four)：
In formula (four), focal lengths of the f for the ellipsoid at the place of ellipsoid 2 of source-collector mirror 1.
Can be drawn by formula (), formula (two), formula (three) and formula (four)：
Present invention particularly provides the focal length of the 2 place ellipsoid of ellipsoid of source-collector mirror 1 is the laser of the output of exposure light source 6
The odd-multiple of wavelength a quarter, i.e.,：
In formula (six), focal lengths of the f for the ellipsoid at the place of ellipsoid 2 of source-collector mirror 1；λ is swashing for the output of exposure light source 6
Optical wavelength；L is natural number.
Then can be drawn by formula (five) and formula (six)：
Also, as shown in Figure 1, it is apparent that：It is burnt by first in the ellipsoid that the ellipsoid 2 of source-collector mirror 1 is located
Point F1, the second focus F2And the triangle Δ F that the point B on ellipsoid 2 is constituted1BF2InThat is 2l+1 ＞ 2m.
In sum, the present invention interferes the striped constructed on the ellipsoid 2 of source-collector mirror 1 using two coherent point light sources
Pattern is consistent with required half-wave zone structure plan.
Claims (10)
1. the manufacture method that the EUV light source with half-wave band structure collects mirror, it is characterised in that comprise the following steps：
Step one, substrate cleaning
Ultrasound wave cleaning, ethanol drying are carried out to source-collector mirror (1) using ultrasonic washing unit, surface contaminant is removed；
Step 2, gluing
It is spin-coated on the ellipsoid (2) of source-collector mirror (1) under exposure light source (6) irradiation and can produces with function against corrosion
Material, forms coating；
Step 3, exposure
Build exposure light path：Exposure light source (6), beam expander (7), source-collector mirror (1), curved surface half anti-half is set gradually along optical axis
Lens (4) and curved reflector (5), the focus of the focus and curved reflector (5) of the curved surface half-reflecting half mirror (4) respectively with
First focus F of ellipsoid (2) the place ellipsoid of source-collector mirror (1)1With the second focus F2Overlap, the curved surface half-reflection and half-transmission
Mirror (4) can carry out reflecting to form spherical wave, the ellipsoid of the source-collector mirror (1) to directional light with curved reflector (5)
(2) focal length of place ellipsoid is equal to the odd-multiple of the optical maser wavelength a quarter that exposure light source (6) is exported；
Interfered by two coherent point light sources and interference fringe is formed on the ellipsoid (2) of source-collector mirror (1), make ellipsoid (2)
On coating it is photosensitive come complete exposure：The laser that the exposure light source (6) exports is formed Jing after beam expander (7) is expanded and parallel is entered
The through hole (8) penetrated in the middle of light (11), incident illumination (11) Jing source-collector mirrors (1) is radiated at curved surface half-reflecting half mirror (4) surface, institute
State curved surface half-reflecting half mirror (4) and the first spherical wave of the first reflected light (13) i.e. is reflected to form to a part of incident illumination (11), to another
A part of incident illumination (11) transmission forms transmitted light (11 ') and is radiated at curved reflector (5) surface, the curved reflector (5)
The second spherical wave of the second reflected light (13 ') i.e., first reflected light (13) and the second reflection are reflected to form to transmitted light (11 ')
Light (13 ') is radiated on the ellipsoid (2) of source-collector mirror (1)；The centre of sphere of first spherical wave and curved surface half-reflection and half-transmission
The focus of mirror (4), the first focus F of source-collector mirror (1)1Overlap, the centre of sphere and the curved reflector (5) of second spherical wave
Focus, the second focus F of source-collector mirror (1)2Overlap, first spherical wave and the second spherical wave are in source-collector mirror
(1) interfere to form interference fringe on ellipsoid (2), at the same make the coating on ellipsoid (2) it is photosensitive complete exposure；
Step 4, baking
Source-collector mirror (1) after exposure is placed and is toasted in an oven；
Step 5, development
Using solvent clean source-collector mirror (1), the coating of unexposed area on the ellipsoid (2) of source-collector mirror (1) is removed；
Step 6, etching
Using etching liquid on the ellipsoid (2) with the patterned source-collector mirror (1) of half-wave etch away sections substrate, etching
Thickness is a quarter of the optical maser wavelength that exposure light source (6) is exported；
Step 7, remove photoresist
Using equipment for burning-off photoresist by plasma remove source-collector mirror (1) ellipsoid (2) on it is exposed after coating, tie half-wave zone
Structure exposes；
Step 8, plated film
One layer of extreme ultraviolet reflectance coating is coated with the ellipsoid (2) of the source-collector mirror (1) with half-wave band structure, completes to have
The EUV light source of half-wave band structure collects the making of mirror.
2. manufacture method according to claim 1, it is characterised in that in step 2, can under exposure light source (6) irradiation
It is sensitive material or sensible heat material to produce the material with function against corrosion；
The sensible heat material is heat cross-linking CTP material, by infrared absorbing dye, resol resin, phenolic aldehyde
Varnish gum and salt composition.
3. manufacture method according to claim 1, it is characterised in that the curved surface half-reflecting half mirror (4) and camber reflection
Mirror (5) structure is identical, be one kind by CO2Paraboloidal mirror made by the material of laser-light transparent；The curved surface half-reflecting half mirror (4)
Surface is coated with part reflective semitransparent film, the directional light expanded more than Jing beam expanders (7) by curved surface half-reflecting half mirror (4) bore
Diameter；Curved reflector (5) surface is coated with high-reflecting film.
4. manufacture method according to claim 1, it is characterised in that in step 4, baking condition is：Toast at 100 DEG C
1min。
5. manufacture method according to claim 1, it is characterised in that the curved surface half-reflecting half mirror (4) and camber reflection
The modes of emplacement of mirror (5) has four kinds, respectively：First inner surface (9) and curved reflector of the curved surface half-reflecting half mirror (4)
(5) the second inner surface (9 ') is while relative with the ellipsoid (2) of source-collector mirror (1)；The curved surface half-reflecting half mirror (4)
Second outer surface (10 ') of the first outer surface (10) and curved reflector (5) is while ellipsoid (2) with source-collector mirror (1)
Relatively；Second outer surface (10 ') of first inner surface (9) and curved reflector (5) of the curved surface half-reflecting half mirror (4) while
It is relative with the ellipsoid (2) of source-collector mirror (1)；First outer surface (10) and curved surface of the curved surface half-reflecting half mirror (4) is anti-
The second inner surface (9 ') of mirror (5) is penetrated while relative with the ellipsoid (2) of source-collector mirror (1).
6. manufacture method according to claim 1, it is characterised in that the exposure light source (6) adopts CO2Laser instrument, CO2
Optical maser wavelength is 10.6 μm.
7. manufacture method according to claim 1, it is characterised in that the solvent selects dilute sodium silicate solution.
8. manufacture method according to claim 1, it is characterised in that the etching liquid selects dilute HNO3It is molten with the mixing of HF
Liquid.
9. manufacture method according to claim 1, it is characterised in that the extreme ultraviolet reflectance coating is Mo/Si multilayer films, week
Phase 6.9nm, was made up of 40～50 cycles.
10. manufacture method according to claim 1, it is characterised in that also including step 9, detection：If A, B are received for light source
Two points on the ellipsoid (2) of collection mirror (1), its midpoint A are located at through hole (8) center, and are located at primary optical axis (3) and ellipsoid
(2) intersection, point B is on ellipsoid (2), and point A misaligned with point B；
When the ellipsoid (2) of source-collector mirror (1) is with suitable half-wave band structure, source-collector mirror (1) by infrared light again
Focus on, so as to realize the spectrum purification function at intermediate focus IF, therefore, reflector space of the half-wave band structure to infrared light should be made
Meet：PathWith pathOptical path difference be the half-wavelength of laser that exposure light source (6) is exported odd-multiple, such as formula
(1) shown in：
In formula (), F1First focus of the ellipsoid that the ellipsoid (2) for source-collector mirror (1) is located, λ are that exposure light source (6) is defeated
The optical maser wavelength for going out, n are natural number；
Two coherent point light sources are located at the first focus F respectively1With the second focus F2, two coherent point light sources form dry on ellipsoid (2)
Striped is related to, wherein bright fringess meet：PathWith pathOptical path difference be the wavelength of laser that exposure light source (6) is exported
Integral multiple, as shown in formula (two)：
In formula (two), F2Second focus of the ellipsoid that the ellipsoid (2) for source-collector mirror (1) is located, and exposure light source (6)
Intermediate focus IF of outfan, λ are the optical maser wavelength that exposure light source (6) is exported, and m is natural number；
In the ellipsoid that the ellipsoid (2) of source-collector mirror (1) is located, there is following geometrical relationship：Source-collector mirror (1) it is ellipse
On the ellipsoid that sphere (2) is located o'clock to the first focus F1, the second focus F2Apart from sum be constant 2a, a be source-collector mirror
(1) the long axial length of the ellipsoid that ellipsoid (2) is located, as shown in formula (three)：
Additionally, also there is the relational expression as shown in formula (four)：
In formula (four), f is the focal length of the ellipsoid that the ellipsoid (2) of source-collector mirror (1) is located；
Can be drawn by formula (), formula (two), formula (three) and formula (four)：
The focal length of the ellipsoid being located due to the ellipsoid (2) of the source-collector mirror (1) is the laser wave that exposure light source (6) is exported
The odd-multiple of long a quarter, i.e.,：
In formula (six), f is the focal length of the ellipsoid that the ellipsoid (2) of source-collector mirror (1) is located, and λ is what exposure light source (6) was exported
Optical maser wavelength, l are natural number；
Then can be drawn by formula (five) and formula (six)：
By the first focus F in the ellipsoid that the ellipsoid (2) of the source-collector mirror (1) is located1, the second focus F2And ellipsoid (2)
On point B constitute triangle Δ F1BF2InThat is 2l+1 ＞ 2m；
In sum, using two coherent point light sources interfere the candy strip that constructs on the ellipsoid (2) of source-collector mirror (1) with
Required half-wave zone structure plan is consistent.
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| CN105865758A (en) * | 2016-06-17 | 2016-08-17 | 哈尔滨工业大学 | Detecting device for extreme ultraviolet collecting mirror system and method for assembling extreme ultraviolet collecting mirror system by applying detecting device |
| CN109596488A (en) * | 2018-11-29 | 2019-04-09 | 海拉（厦门）电气有限公司 | A kind of novel laser PM2.5 dust sensor |
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