CN105017848A - Silicon ink, preparing method of silicon ink and method for preparing crystalline silicon battery emitting electrode - Google Patents
Silicon ink, preparing method of silicon ink and method for preparing crystalline silicon battery emitting electrode Download PDFInfo
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- CN105017848A CN105017848A CN201410170790.8A CN201410170790A CN105017848A CN 105017848 A CN105017848 A CN 105017848A CN 201410170790 A CN201410170790 A CN 201410170790A CN 105017848 A CN105017848 A CN 105017848A
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Abstract
The invention discloses silicon ink, a preparing method of silicon ink and a method for preparing a crystalline silicon battery emitting electrode. The silicon ink is silicon ink which has the viscosity being 10 to 80 Pa*S and is prepared from 5 to 20 percent of phosphorus, 50 to 85 percent of organic solvents sand 5 to 15 parts of thickening agents; the organic agents consist of 50 to 80 parts of terpilenol, 20 to 50 parts of esters and 2 to 5 parts of isopropanol or cyclohexanol; the thickening agents are methylcellulose or droxyethylcellulose. The method for preparing the crystalline silicon battery emitting electrode from the silicon ink comprises the steps that silicon chips are subjected to cleaning velvet making; the silicon ink is printed and dried; in addition, phosphorus oxychloride diffusion is carried out; silicon glass is subjected to wet etching and dephosphorization; a silicon nitride reflection reduction film is deposited; back side silver slurry and aluminum slurry are printed and dried; front side sliver pulp is printed in a way of being aligned with the silicon ink pattern; drying is carried out; the sliver slurry and the aluminum slurry are sintered for preparing the metal electrode. The crystal silicon battery emitting electrode prepared from the silicon ink has good response effect on blue light; the conductivity is good; the process step is simple; the cost is low.
Description
Technical field
The invention belongs to the preparation field of selective emitter of crystal silicon solar cell, relate to a kind of silicon ink and preparation method and prepare the method for crystal silicon cell emtting electrode.
Background technology
At present, crystal silicon cell conventional production process is very ripe, is substantially summarised as cleaning and texturing-diffusion-etching and secondary cleaning-depositing antireflection film-printing electrocondution slurry-sintering prepares several steps such as electrode.Wherein, diffusion is committed step, and condition of divergence determines the concentration of phosphorus in the PN junction degree of depth and N-type layer, and in the PN junction degree of depth and N-type layer, the concentration of phosphorus affects electroconductibility and the spectral response of emtting electrode, and then affects the photoelectric transformation efficiency of battery.Phosphorus doping density is high, PN junction is dark, and square resistance is low, and emtting electrode electroconductibility is strong but blue response is poor, otherwise then square resistance is high, and emtting electrode blue response is good but electroconductibility is weak.The diffusion technique of conventional batteries is difficult to the optimum matching effect reaching the two, and the front side silver paste cost being applicable to high square resistance is in addition higher.
For the problems referred to above, industry proposes selective emitter battery, namely sensitive area adopts and gently mixes phosphorus, improve battery blue light corresponding, but not sensitive area (silver electrode coverage area) adopts heavily doped phosphorus, form good ohmic with silver electrode during sintering to contact, reduce the series resistance of battery, obtain the high-level efficiency battery of high open circuit voltage, high short-circuit current, high fill factor.This type of battery production technology adds the method for anti-carving, mask method, phosphorus slurry processes etc. in its common process, but anti-carves method and mask method and increase that step is various, complex process newly, and cost is high and limit its widespread use; Phosphorus slurry processes produces secondary pollution owing to needing cleaning after printing, need to clean after printing phosphorus slurry, have metal ion in cleaning process to remain, residual metal ion enters silicon chip inside through high temperature diffusion step and affects battery conversion efficiency, and these shortcomings also limit the widespread use of phosphorus slurry processes.
Summary of the invention
Object of the present invention solves the above-mentioned problems in the prior art exactly, there is provided a kind of silicon ink and preparation method and prepare the method for crystal silicon cell emtting electrode, the crystal silicon cell emtting electrode blue response using this silicon ink to make is good, and electroconductibility is strong, processing step is simple, and cost is low.
For completing above-mentioned purpose, technical solution of the present invention is: a kind of silicon ink, by weight calculating, its viscosity be made up of following raw material is the silicon ink of 10-80PaS, the thickening material containing the nano silica fume of 5-20% phosphorus, the organic solvent of 50-85 and 5-15 of 10-30; Described organic solvent is mixed solvent, and by weight calculating, it is made up of the Terpineol 350 of 50-80, the ester class of 20-50, the Virahol of 2-5 or hexalin; Thickening material is methylcellulose gum or Natvosol.
Ester class described above is one or both mixtures in trioctyl phosphate and triethyl phosphate.
The preparation method of silicon ink described above, it comprises the following steps: the phosphorous nano silica fume dispersion of described amount is obtained the thickening material that silicon ink (2) adds described amount by (1) in organic solvent, mix, adjusting viscosity is to 10-80PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode;
Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, concrete grammar is: adopt the PU scraping article of shore hardness 60-90 to be coated on by silicon ink uniformly on 280-400 order polyester half tone, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 60-90N, with the print speed of 100-220mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 1-5 minute in the chain type stoving oven of 180-400 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 800-850 DEG C of condition, deposition 5-30 minute, realize high low square resistance difference, silicon ink coverage area sheet resistance value 20-50 Ω/sq, non-coverage area sheet resistance value reaches 90-120 Ω/sq,
Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, front silver slurry is printed onto on silicon ink graphic, dries at 200-400 DEG C of temperature.
Chain type stoving oven in step described above (2) adopts the ceramic furnace zone without metal.
The advantage of the selective emitter of crystal silicon solar cell adopting silicon ink of the present invention to prepare is as follows:
1, silicon ink of the present invention is good, and grid line width controllability improves, and meanwhile, can carry out High temperature diffusion, avoid the secondary pollution problem in cleaning process after silicon ink completes without the need to cleaning.2, silicon ink of the present invention is adopted to prepare selective emitter battery, its silicon ink coverage area sheet resistance value 20-50 Ω/sq, non-coverage area sheet resistance value 90-120 Ω/sq, reaches the object of low series resistance and high blue response, battery conversion efficiency is obviously promoted, and improves more than 0.5%.Meanwhile, the battery of low series resistance can adopt lower-cost silver slurry to make electrode, and reduce further the production cost of product, every block battery can reduce costs more than 3%.
Embodiment
Below in conjunction with concrete embodiment, the invention will be further described.
Embodiment 1: the silicon ink of the present embodiment is made up of following raw material: 20 containing the nano silica fume of 15% phosphorus, the organic solvent of 80 and 10 methylcellulose gum.Organic solvent is by weight calculating, and it is made up of Terpineol 350, the trioctyl phosphate of 25, the Virahol of 5 of 70.(1) mixed by the phosphorous nano silica fume dispersion methylcellulose gum that obtained silicon ink (2) adds described amount in organic solvent of described amount, viscosity is to 20PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode.Described step 1,3,4,5,7 is conventional production process.Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, silicon ink is coated on 352 order polyester half tones by the PU scraping article of concrete employing shore hardness 75 uniformly, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 60N, with the print speed of 150mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 2 minutes in the chain type stoving oven of 260 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 800 DEG C of conditions, deposit 10 minutes
,realize high low square resistance difference, silicon ink coverage area sheet resistance is worth 20 Ω/sq, and non-coverage area sheet resistance value reaches 100 Ω/sq.Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, is printed onto on silicon ink graphic, dries front silver slurry at 400 DEG C of temperature.The efficiency of conversion of the silicon single crystal selective emitter battery (156*156) made reaches 18.82%, and cost reduces 3%.
Embodiment 2: the silicon ink of the present embodiment is made up of following raw material: 25 containing the nano silica fume of 6% phosphorus, the organic solvent of 60 and 15 Natvosol.Organic solvent is by weight calculating, and it is made up of Terpineol 350, the triethyl phosphate of 38, the hexalin of 2 of 60.(1) mixed by the phosphorous nano silica fume dispersion Natvosol that obtained silicon ink (2) adds described amount in organic solvent of described amount, viscosity is to 32PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode.Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, silicon ink is coated on 400 order polyester half tones by the PU scraping article of concrete employing shore hardness 70 uniformly, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 70N, with the print speed of 180mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 2 minutes in the chain type stoving oven of 350 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 830 DEG C of conditions, deposit 7 minutes
,realize high low square resistance difference, silicon ink coverage area sheet resistance is worth 20 Ω/sq, and non-coverage area sheet resistance value reaches 90 Ω/sq.Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, is printed onto on silicon ink graphic, dries front silver slurry at 380 DEG C of temperature.The efficiency of conversion of the silicon single crystal selective emitter battery (156*156) made reaches 19.01%, and cost reduces 3%.
Embodiment 3: the silicon ink of the present embodiment is made up of following raw material: 30 containing the nano silica fume of 5% phosphorus, the organic solvent of 50 and 5 methylcellulose gum.Organic solvent by weight calculate, its by the Terpineol 350 of 50, the trioctyl phosphate of 20 and triethyl phosphate mixture (ratio is 1:1), 3 hexalin form.(1) mixed by the phosphorous nano silica fume dispersion Natvosol that obtained silicon ink (2) adds described amount in organic solvent of described amount, viscosity is to 63PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode.Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, silicon ink is coated on 280 order polyester half tones by the PU scraping article of concrete employing shore hardness 60 uniformly, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 65N, with the print speed of 100mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 1 minute in the chain type stoving oven of 180 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 810 DEG C of conditions, deposit 5 minutes
,realize high low square resistance difference, silicon ink coverage area sheet resistance is worth 30 Ω/sq, and non-coverage area sheet resistance value reaches 110 Ω/sq.Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, is printed onto on silicon ink graphic, dries front silver slurry at 200 DEG C of temperature.The efficiency of conversion of the silicon single crystal selective emitter battery (156*156) made reaches 18.98%, and cost reduces 3%.
Embodiment 4: the silicon ink of the present embodiment is made up of following raw material: 12 containing the nano silica fume of 10% phosphorus, the organic solvent of 70 and 7 methylcellulose gum.Organic solvent by weight calculate, its by the Terpineol 350 of 80, the trioctyl phosphate of 30 and triethyl phosphate mixture (ratio is 2:1), 4 Virahol form.(1) mixed by the phosphorous nano silica fume dispersion Natvosol that obtained silicon ink (2) adds described amount in organic solvent of described amount, viscosity is to 80PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode.Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, silicon ink is coated on 300 order polyester half tones by the PU scraping article of concrete employing shore hardness 65 uniformly, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 80N, with the print speed of 200mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 4 minutes in the chain type stoving oven of 200 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 820 DEG C of conditions, deposit 15 minutes
,realize high low square resistance difference, silicon ink coverage area sheet resistance is worth 15 Ω/sq, and non-coverage area sheet resistance value reaches 120 Ω/sq.Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, is printed onto on silicon ink graphic, dries front silver slurry at 250 DEG C of temperature.The efficiency of conversion of the silicon single crystal selective emitter battery (156*156) made reaches 19.05%, and cost reduces 3%.
Embodiment 5: the silicon ink of the present embodiment is made up of following raw material: 18 containing the nano silica fume of 20% phosphorus, the organic solvent of 55 and 9 Natvosol.Organic solvent by weight calculate, its by the Terpineol 350 of 55, the trioctyl phosphate of 40 and triethyl phosphate mixture (ratio is 1:2), 2.5 Virahol form.(1) mixed by the phosphorous nano silica fume dispersion Natvosol that obtained silicon ink (2) adds described amount in organic solvent of described amount, viscosity is to 75PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode.Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, silicon ink is coated on 350 order polyester half tones by the PU scraping article of concrete employing shore hardness 80 uniformly, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 75N, with the print speed of 130mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 5 minutes in the chain type stoving oven of 240 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 820 DEG C of conditions, deposit 20 minutes
,realize high low square resistance difference, silicon ink coverage area sheet resistance is worth 40 Ω/sq, and non-coverage area sheet resistance value reaches 95 Ω/sq.Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, is printed onto on silicon ink graphic, dries front silver slurry at 300 DEG C of temperature.The efficiency of conversion of the silicon single crystal selective emitter battery (156*156) made reaches 18.89%, and cost reduces 3%.
Embodiment 6: the silicon ink of the present embodiment is made up of following raw material: 20 containing the nano silica fume of 12% phosphorus, the organic solvent of 65 and 12 methylcellulose gum.Organic solvent by weight calculate, its by the Terpineol 350 of 65, the trioctyl phosphate of 50 and triethyl phosphate mixture (ratio is 1:1), 3.5 Virahol form.(1) mixed by the phosphorous nano silica fume dispersion Natvosol that obtained silicon ink (2) adds described amount in organic solvent of described amount, viscosity is to 50PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode.Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, silicon ink is coated on 380 order polyester half tones by the PU scraping article of concrete employing shore hardness 85 uniformly, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 85N, with the print speed of 160mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 2.5 minutes in the chain type stoving oven of 300 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 840 DEG C of conditions, deposit 25 minutes
,realize high low square resistance difference, silicon ink coverage area sheet resistance is worth 50 Ω/sq, and non-coverage area sheet resistance value reaches 105 Ω/sq.Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, is printed onto on silicon ink graphic, dries front silver slurry at 350 DEG C of temperature.The efficiency of conversion of the silicon single crystal selective emitter battery (156*156) made reaches 18.95%, and cost reduces 3%.
Embodiment 7: the silicon ink of the present embodiment is made up of following raw material: 23 containing the nano silica fume of 18% phosphorus, the organic solvent of 85 and 14 methylcellulose gum.Organic solvent by weight calculate, its by the Terpineol 350 of 75, the trioctyl phosphate of 45 and triethyl phosphate mixture (ratio is 2:1), 4.5 hexalin form.(1) mixed by the phosphorous nano silica fume dispersion Natvosol that obtained silicon ink (2) adds described amount in organic solvent of described amount, viscosity is to 10PaS.
The method of crystal silicon cell emtting electrode prepared by silicon ink described above, and it comprises the following steps: (1) silicon chip cleaning and texturing; (2) print, dry silicon ink and carry out phosphorus oxychloride diffusion; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (6) front side silver paste printed to eka-silicon ink graphic and dry; (7) sintering silver slurry and aluminium paste prepare metal electrode.Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, silicon ink is coated on 360 order polyester half tones by the PU scraping article of concrete employing shore hardness 90 uniformly, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 90N, with the print speed of 140mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 3.5 minutes in the chain type stoving oven of 400 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 825 DEG C of conditions, deposit 30 minutes
,realize high low square resistance difference, silicon ink coverage area sheet resistance is worth 45 Ω/sq, and non-coverage area sheet resistance value reaches 115 Ω/sq.Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, is printed onto on silicon ink graphic, dries front silver slurry at 380 DEG C of temperature.The efficiency of conversion of the silicon single crystal selective emitter battery (156*156) made reaches 19.1%, and cost reduces 3%.
Claims (5)
1. a silicon ink, is characterized in that: by weight calculating, its viscosity be made up of following raw material is the silicon ink of 10-80PaS, the thickening material containing the nano silica fume of 5-20% phosphorus, the organic solvent of 50-85 and 5-15 of 10-30; Described organic solvent is mixed solvent, and by weight calculating, it is made up of the Terpineol 350 of 50-80, the ester class of 20-50, the Virahol of 2-5 or hexalin; Thickening material is methylcellulose gum or Natvosol.
2. silicon ink according to claim 1, is characterized in that: described ester class is one or both mixtures in trioctyl phosphate and triethyl phosphate.
3. the preparation method of a claim 1 or the silicon ink described in 2 or 3, it is characterized in that: it comprises the following steps: the phosphorous nano silica fume dispersion of described amount is obtained the thickening material that silicon ink (2) adds described amount by (1) in organic solvent, mix, adjusting viscosity is to 10-80PaS.
4. prepared a method for crystal silicon cell emtting electrode by the silicon ink described in claim 1 or 2, it comprises the following steps: (1) silicon chip cleaning and texturing; (3) wet etching and dephosphorization silex glass; (4) deposited silicon nitride antireflective coating; (5) print, dry back silver slurry and aluminium paste; (7) sintering silver slurry and aluminium paste prepare metal electrode; It is characterized in that: it also comprises step (2) printing, dry silicon ink and carry out phosphorus oxychloride diffusion and step (6) to eka-silicon ink graphic printing front side silver paste and dry;
Wherein step (2) printing, dry silicon ink and the method for carrying out phosphorus oxychloride diffusion is: be printed onto on front side of silicon wafer matte by described silicon ink according to the requirement of front electrode grid line figure, require that the width of thin grid line is 80-200 micron, concrete grammar is: adopt the PU scraping article of shore hardness 60-90 to be coated on by silicon ink uniformly on 280-400 order polyester half tone, again with polyester half tone 60 ° of angle directions on apply the squeegee pressure of 60-90N, with the print speed of 100-220mm/s by silicon ink on front side of silicon wafer matte, silicon chip after printing is carried out oven dry 1-5 minute in the chain type stoving oven of 180-400 DEG C, silicon chip after oven dry is placed in diffusion furnace spread, utilizes nitrogen to carry phosphorus oxychloride and enter diffusion furnace, under 800-850 DEG C of condition, deposition 5-30 minute, realize high low square resistance difference, silicon ink coverage area sheet resistance value 20-50 Ω/sq, non-coverage area sheet resistance value reaches 90-120 Ω/sq,
Step (6) to the method that eka-silicon ink graphic printing front side silver paste is also dried is: adopt alignment device to carry out exactitude position to the silicon chip being printed with silicon ink graphic, front silver slurry is printed onto on silicon ink graphic, dries at 200-400 DEG C of temperature.
5. the method for crystal silicon cell emtting electrode prepared by silicon ink according to claim 1, it is characterized in that: the chain type stoving oven in described step (2) adopts the ceramic furnace zone without metal.
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| CN115117179A (en) * | 2022-06-10 | 2022-09-27 | 华中科技大学 | Printable porous optical film and preparation method and application thereof |
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