CN105006417B - A kind of ion implantation apparatus - Google Patents
A kind of ion implantation apparatus Download PDFInfo
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- CN105006417B CN105006417B CN201510419657.6A CN201510419657A CN105006417B CN 105006417 B CN105006417 B CN 105006417B CN 201510419657 A CN201510419657 A CN 201510419657A CN 105006417 B CN105006417 B CN 105006417B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 22
- 230000005684 electric field Effects 0.000 claims abstract description 100
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 46
- 150000002500 ions Chemical class 0.000 claims description 190
- 230000005611 electricity Effects 0.000 claims description 11
- 238000002347 injection Methods 0.000 abstract description 18
- 239000007924 injection Substances 0.000 abstract description 18
- 238000010790 dilution Methods 0.000 abstract description 8
- 239000012895 dilution Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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Abstract
The present invention relates to field of electronic devices, a kind of ion implantation apparatus is disclosed, including：Ion gun, it is used to be generated and transmitted by ion beam；And first electrode device, it is arranged on ion gun to the path of sample, for producing the tapered electric field along the axis directional spreding of the ion gun, and make not to be not injected into sample along the direction deflection perpendicular to the axis in the presence of the tapered electric field along the ion that the axis direction of ion gun is moved in the ion beam.In addition, the downstream of the first electrode device is also provided with second electrode device, for the electric field for producing assisting ion to deflect, when the electric field is applied in, deflected along the ion in axis direction and be not injected into sample, and the electric field is when being applied in, along axis direction ion is through second electrode device and is injected into sample.The present invention carries out ion beam dilution by tapered electric field, and ion gate is formed by transverse electric field, to realize a small amount of ion even injection of single ion.
Description
Technical field
The present invention relates to field of electronic devices, in particular it relates to a kind of ion implantation apparatus.
Background technology
With the further raising of the integrated level of integrated circuit, the size of microelectronic component further reduces from micron-scale
To nano-scale, or even to several nanometers of size.It follows that the correlation technique and technique of making devices must also be sent out
Changing, and ion implanting is exactly a kind of key technology therein.It is well known in the art that, in small device nano-scale
In, the ion of finite number is injected with specific spatial distribution, the reasonable characteristics of device could be formed.And a small amount of ion is injected,
Even several ions be that cannot be realized with simple Flied emission technology, it is therefore desirable to consider every time only inject it is several even
The single ion injection technique of single ion.But realize that single ion is injected or highly difficult, how to improve single ion injection technique
Also urgent technical need is had become.
The content of the invention
It is an object of the invention to provide a kind of ion implantation apparatus, the note for solving the even single ion of a small amount of ion
Enter problem.
To achieve these goals, the present invention provides a kind of ion implantation apparatus, for injecting ions into sample in, bag
Include：
Ion gun, it is used to be generated and transmitted by ion beam；And first electrode device, it is arranged on the ion gun to institute
State on the path of sample, for producing the tapered electric field along the axis directional spreding of the ion gun, and make the ion beam
In the ion that does not move along the axis direction of ion gun in the presence of the tapered electric field along the side perpendicular to the axis
The sample is not injected into deflection.
Preferably, the first electrode device includes：With foraminate electric pole plate, it is arranged on the ion gun to institute
State on the path of sample, and near the ion gun；With foraminate bottom electrode plate, it is arranged on the ion gun to the sample
On the path of product, and near the sample；And first grid bias power supply, it is used for the electric pole plate and the bottom electrode plate
Power supply, so as to be formed between the electric pole plate and the bottom electrode plate along the taper electricity of the axis directional spreding of the ion gun
；Wherein, the electric pole plate is differed with the bottom electrode board size, and on the electric pole plate and the bottom electrode plate
On the axis of the ion gun, the ion beam of the ion gun transmitting is through small on the electric pole plate at the center of aperture
Hole enters the tapered electric field, and the ion moved along the axis direction of ion gun leaves the cone through the aperture on bottom electrode plate
Shape electric field.
Preferably, the electric pole plate and the bottom electrode plate are plane electrode plate parallel to each other.
Preferably, the electric pole plate and the bottom electrode plate are curved surface electrode plate.
Preferably, the electric pole plate and the bottom electrode plate are annular electro polar circle.
Preferably, the electric pole plate is parallel to each other with the bottom electrode plate, and the electric pole plate is plane electrode plate,
The bottom electrode plate is the narrow meshed cantilever beam in needle point center.
Preferably, the first electrode device includes：The first cantilever beam with needle point aperture, and first cantilever beam
Upper and lower surface is coated with annular electrode；And first grid bias power supply, it is used to be powered to the upper and lower surface of the first cantilever beam, so that
The tapered electric field along the axis direction of the ion gun is formed between the upper and lower surface of the first cantilever beam；Wherein, the needle point is small
On the axis of the ion gun, the ion beam of the ion gun transmitting enters described through the upper end of needle point aperture at the center in hole
Tapered electric field, the ion moved along the axis direction of ion gun leaves the tapered electric field through the lower end of needle point aperture.
Preferably, the ion implantation apparatus also includes：Second electrode device, it is arranged on the first electrode device
Downstream, for the electric field for producing assisting ion to deflect, when the electric field is applied in, second electrode device is entered along axis direction
Ion deflects and is not injected into the sample, and the electric field enters second electrode device when not being applied in along axis direction
Ion through second electrode device and being injected into the sample.
Preferably, the second electrode device includes：Electrode pair, its downstream for being arranged on the first electrode device is used
In the electric field for producing assisting ion deflection；Second grid bias power supply, it powers in the electrode pair, so that between the electrode pair
Form the electric field of the assisting ion deflection；And with foraminate stop part, its electricity for being arranged on the assisting ion deflection
Lower end, and near the sample, and aperture on the stop part is centrally located on the axis of the ion gun.
Preferably, the second electrode device includes：In narrow meshed second cantilever beam of needle point, and aperture on needle point
The heart is located on the axis of the ion gun；And second grid bias power supply, it is used to be powered for second cantilever beam, so that
The electric field of assisting ion deflection is formed between two tops up and down of the needle point of two cantilever beams.
By above-mentioned technical proposal, the beneficial effects of the invention are as follows：The present invention carries out ion beam dilution by tapered electric field,
The ion populations by corresponding aperture are greatly reduced, a small number of ion possibility that even single ion passes through aperture of realization are increased
Property, at the same time also ion beam is collimated.Additionally, ion gate also is devised in the downstream of tapered electric field, using generation
Assisting ion deflection electric field and stop part makes one or several ions pass through, and block passing through for later ion, enter one
Step realizes a small amount of ion even injection of single ion.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Brief description of the drawings
Accompanying drawing is, for providing a further understanding of the present invention, and to constitute the part of specification, with following tool
Body implementation method is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the exit path schematic diagram that ion beam is launched in intermediate ion source of the present invention；
Fig. 2 is the structural representation of the intermediate ion injection device of embodiments of the invention one；
Fig. 3 is the structural representation of the intermediate ion injection device of embodiments of the invention two；
Fig. 4 is the structural representation of the intermediate ion injection device of embodiments of the invention three；
Fig. 5 is the structural representation of the intermediate ion injection device of embodiments of the invention four；
Fig. 6 is the top view of annular electrode collar in embodiments of the invention four；
Fig. 7 is the structural representation of the intermediate ion injection device of embodiments of the invention five；
Fig. 8 is the structural representation of the intermediate ion injection device of embodiments of the invention six；
Fig. 9 is the top view of cantilever beam in embodiments of the invention six；
Figure 10 is the upward view of cantilever beam in embodiments of the invention six；
Figure 11 is the structural representation of the intermediate ion injection device of embodiments of the invention seven；
Figure 12 is the structural representation of the intermediate ion injection device of embodiments of the invention eight.
Description of reference numerals
1st, ion gun, 2, ion beam, 3, axis, 4, sample, 5, first electrode device, 6, tapered electric field, 7, ion it is inclined
Turn path, 8, sample stage, 9, vacuum cavity, 10, second electrode device；
501st, electric pole plate, 502, bottom electrode plate, the 503, first grid bias power supply, the 504, first cantilever beam；
5041st, needle point root, 5042, needle point aperture, 5043, cantilever beam top annular electrode, 5044, needle point top annular
Electrode, 5045, contact conductor；
101st, electrode pair, the 102, second grid bias power supply, 103, stop part, the 104, second cantilever beam.
Specific embodiment
Specific embodiment of the invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
In the present invention, in the case where opposite explanation is not made, the noun of locality for using such as " upper and lower, left and right " is typically referred to
The upper and lower, left and right of respective profile, " inside and outside " refers to the inner and outer of respective profile, " remote, near " refer to the remote of respective profile and
Closely.
Generally, the ion number that ion gun is launched is huge, is unfavorable for realizing that a small amount of ion is even single
The injection of individual ion.Accordingly, it would be desirable to consider how to choose very small amount of ion from the ion that ion gun is launched.
General ion beam emittance out after be not parallel, as shown in figure 1, the ion beam 2 launched from ion gun 1
Not all along axis 3 (axis as described below refers both to the axis of ion gun) outgoing of ion gun, but have one
Fixed dispersion angle and diameter.Specifically, the diameter of the ion beam of outgoing can be by the size control of ion source outlet, due to outgoing
Ion beam have certain diameter, then the direction of ion beam also necessarily has difference, i.e. ion beam and there is a certain degree of hair
Dissipate.
Accordingly, it is contemplated that make to emit ion beam from ion gun and fly into one along axis direction along the direction of axis
Tapered electric field, the ion that is only moved along axis in the tapered electric field will not make by the cross stream component of tapered electric field
With.For not being the ion moved along axis, such as the direction of motion deviates the ion of axis certain angle, or flat with axis
Row but the ion at deviation axis center, will be by the effect of the cross stream component of tapered electric field along perpendicular to axis direction deflection.
Accordingly, it is considered to arrive influence of the tapered electric field to ion, The present invention gives following embodiment, with realize it is a small amount of from
The injection of the even single ion of son.
Embodiment one
This gives a kind of ion implantation apparatus for injecting ions into sample 4, as shown in Fig. 2 including：
Ion gun 1, it is used to be generated and transmitted by ion beam 2；And first electrode device 5, it is arranged on the ion gun 1 to the sample
On the path of product 4, for producing the tapered electric field 6 along the axis directional spreding of the ion gun, and make the ion beam 2
Do not deflected without note along the direction perpendicular to axis 3 in the presence of the tapered electric field 6 along the ion that the direction of axis 3 is moved
Enter the sample.
In the present embodiment, the first electrode device 5 includes：With foraminate electric pole plate 501, its be arranged on it is described from
Component 1 on the path of the sample 4, and near the ion gun 1；With foraminate bottom electrode plate 502, it is arranged on described
Ion gun 1 is on the path of the sample 4, and near the sample 4, and the first grid bias power supply 503, it is used for described
Battery lead plate 501 and the bottom electrode plate 502 are powered, so as to be formed between the electric pole plate 501 and the bottom electrode plate 502
The tapered electric field 6 of axis direction distribution.The tapered electric field 6 is preferably the conical distribution electric field with axis as symmetry axis.
Wherein, the electric pole plate 501 is differed with the size of bottom electrode plate 502, and the electric pole plate 501 and institute
The center of aperture on bottom electrode plate 502 is stated on the axis 3 of the ion gun, the size of aperture can be adjusted, so that
Exit direction passes through close to the ion of axis, and deviate axis ion farther out then cannot be by aperture, directly by two
Battery lead plate is stopped.The ion beam 2 of the transmitting of the ion gun 1 enters taper electricity through the aperture on the electric pole plate 501
6, and in the presence of the cross stream component of the tapered electric field 6, make in ion beam the ion not moved along axis along vertical
Deflected in the direction of the axis, and cone is then left by the aperture on the bottom electrode plate 502 along the ion that axis is moved
Shape electric field 6, and the sample 4 can be injected into.As shown in Fig. 2 illustrating the ion deflecting road of ion do not moved along axis
Footpath 7.
In the present embodiment, the electric pole plate 501 is plane electrode plate parallel to each other with the bottom electrode plate 502, and
The size of bottom electrode plate 502 is smaller than upper flat plate electrode 501.
In addition, generation and the electric-field intensity of tapered electric field can be adjusted by adjusting the first grid bias power supply 503, it is such as corresponding
The first grid bias power supply 503 switch off, between making two battery lead plates cannot produce tapered electric field, then the ion of ion gun transmitting
Beam does not deflect.Additionally, the sample stage 8 for possessing high accuracy XY displacement functions is also provided with the present embodiment, for placing sample
Product 4.
In the present embodiment, whole ion implantation apparatus is in vacuum cavity 9, at utmost to ensure the pure of ion beam
Degree, and the scattering of ion beam and other particles can be reduced.Meanwhile, because the injection of ion needs positioning precision higher,
Whole vacuum cavity is required under damping environment.
It is not the ion moved along axis, such as after ion beam 2 enters tapered electric field 6 along axis 3 in the present embodiment
The direction of motion deviates the ion of axis certain angle, or with axis parallel but deviates the ion at axis center, can be bored
The cross stream component of shape electric field accelerates or slows down deflection, so as to deviate more from axis, and then leads to along the ion that axis 3 is moved
The aperture crossed on the bottom electrode plate 502 injects the sample 4, so as to reach the effect of dilution ion beam.
Embodiment two
Relative to embodiment one, as shown in figure 3, the size of bottom electrode plate 502 is than upper flat plate electrode 501 in the present embodiment
Greatly, the sense of current of the first grid bias power supply and is changed accordingly, so that the electric field line direction of the tapered electric field for being formed and implementation
Example one is conversely, by the tapered electric field, can also reach the effect of dilution ion beam.
Embodiment three
Relative to embodiment one, as shown in figure 4, the electric pole plate 501 and the bottom electrode plate 502 in the present embodiment are chi
The very little curved surface electrode plate for differing, by the two curved surface electrode plate shapes into the taper electricity in the axis direction along the ion gun
, and pass through the tapered electric field, can also reach the effect of dilution ion beam.
Example IV
Relative to embodiment one, as shown in figure 5, the electric pole plate 501 and the bottom electrode plate 502 in the present embodiment are chi
The very little annular electro polar circle for differing, the structure of the annular electro polar circle by the two annular electrode circles as shown in fig. 6, formed along institute
The tapered electric field in the axis direction of ion gun is stated, and passes through the tapered electric field, can also reach the effect of dilution ion beam.
Embodiment five
Relative to embodiment one, as shown in fig. 7, the electric pole plate 501 in the present embodiment is mutual with the bottom electrode plate 502
It is parallel, and the electric pole plate 501 is plane electrode plate, the bottom electrode plate 502 is the narrow meshed cantilever beam in needle point center, with
Make to form the tapered electric field along the axis direction of the ion gun between the electric pole plate and the bottom electrode plate, and pass through this
Tapered electric field, can also reach the effect of dilution ion beam.
Embodiment six
As shown in Fig. 8 to Figure 10, first electrode device described in the present embodiment 5 includes：With needle point aperture 5042 first
Cantilever beam 504, and the upper and lower surface (including needle point top) of first cantilever beam 504 is coated with annular electrode；And first is inclined
Voltage source 503, it is used to be powered to the upper and lower surface of the first cantilever beam, so as to be formed between the upper and lower surface of the first cantilever beam along institute
The tapered electric field in the axis direction of ion gun is stated, i.e., in cantilever beam top annular electrode 5043 and needle point top annular electrode
The tapered electric field along the axis directional spreding of the ion gun is formed between 5044.Wherein, needle point root 5041 illustrates needle point
And the boundary line between the surface plate of cantilever beam lower surface, so as to be apparent from tapered electric field be cantilever beam top annular electrode 5043 with
Produced between needle point top annular electrode 5044.
Wherein, the center of the needle point aperture 5042 is on the axis of the ion gun, the transmitting of the ion gun 1 from
Beamlet 2 enters the tapered electric field, and the ion beam 2 of the ion gun transmitting enters the taper through the upper end of needle point aperture 5042
Electric field 6, the ion moved along the direction of axis 3 of ion gun leaves the tapered electric field 6 through the lower end of needle point aperture 5042.
In the presence of the cross stream component of the tapered electric field, the ion not moved along the axis of ion gun in ion beam is along perpendicular to described
The direction deflection of the axis of ion gun, and can be then injected into by needle point aperture along the ion that the axis of ion gun is moved
Sample.
As shown in Figures 9 and 10, it is provided with cantilever beam top annular electrode 5043 and needle point top annular electrode 5044
Contact conductor 5045, the first grid bias power supply 503 can be connected by contact conductor 5045, and first grid bias power supply 503 is two rings
Shape electrode is powered, and the tapered electric field of the formation between two annular electrodes can be adjusted by adjusting the grid bias power supply.Wherein, for
Needle point top annular electrode 5044, it can be selected according to needle point radius of curvature.In addition, being also provided with possessing in the present embodiment
The sample stage 8 of high accuracy XY displacement functions, for placing sample 4.
In the present embodiment, tapered electric field is formed using two annular electrodes of cantilever beam, by the tapered electric field, can reached
Dilute the effect of ion beam.
Embodiment seven
In any embodiment of embodiment one to embodiment six, the electric-field intensity with tapered electric field increases, by small
The ion beam line in hole will reduce, with tapered electric field two battery lead plates between distance increase, by the ion beam beam of aperture
Stream will be reduced.May be such that ion beam is reduced to only single ion within a certain period of time and passes through by the regulation to tapered electric field voltage
State, realize dilution to ion beam.
But after the even single ion of these a small amount of ion beams is formed, if without corresponding ion gate, making one
Individual or several ions pass through, and block passing through for later ion, then in the case of continuous transmitting ion beam, it would still be possible to cause
Multiple ions inject sample in different time points, so as to a small amount of ion or single ion injection cannot be realized.
Therefore, on the basis of any ion implantation apparatus in above-described embodiment one to embodiment six, as shown in figure 11,
The present embodiment is also provided with second electrode device 10 outside the small hole exits in lower end of tapered electric field.The second electrode device sets
Put in the downstream of the first electrode device 5, for the electric field for producing assisting ion to deflect, when the electric field is applied in, along axis
The direction of line 3 deflects into the ion of second electrode device 10 and is not injected into the sample 4, and the electric field is not when being applied in,
Along the direction of axis 3 into the ion of second electrode device 10 is through second electrode device 10 and is injected into the sample 4.
In the present embodiment, the second electrode device 10 includes：Electrode pair 101, it is arranged on the first electrode device
Downstream, for produce assisting ion deflect electric field；Second grid bias power supply 102, it is used to be powered to the electrode pair, so that
The electric field of assisting ion deflection is formed between the electrode pair；And with foraminate stop part 103, it is arranged on the transverse direction
The lower end of electric field, and near the sample 4, and aperture on the stop part is centrally located on the axis 3 of the ion gun.
In the present embodiment, electrode pair 101 preferably uses the parallel-plate electrode pair arranged along axis direction, so as to produce
The electric field of assisting ion deflection is the transverse electric field perpendicular to axis direction.And second grid bias power supply 102 is electrode pair
101 power supplies, when the power is turned on, the electric field of assisting ion deflection is applied in, otherwise the electric field of assisting ion deflection is not applied in.
Therefore, by the coordination electrode of the second grid bias power supply 102 to 101 electric fields for producing assisting ion deflection, the second electricity is made
Pole device turns into an ion gate, when the electric field of assisting ion deflection is not applied in, the second electricity is entered along axis direction
The ion of pole device is not deflected, and is injected into sample through the aperture on the stop part 103, and assisting ion is deflected
Electric field when being applied in, there is enough deflection in the ion for entering second electrode device along axis direction, by the stop part
103 stop, so as to sample cannot be injected.Therefore, first electrode device is coordinated by second electrode device, it is possible to achieve
Make one or several ions pass through, and block passing through for later ion.
In the present embodiment, the stop part 103 is preferably back bias voltage battery lead plate with holes, and it is connected with negative bias voltage source,
Can be deflected with assisting ion, more accurately manipulate the outgoing situation of ion, to realize that single-particle injects.
Therefore, as long as the present embodiment forms an electric field for applying sufficient intensity, you can so that going out along axis direction
The ion deflection penetrated and the aperture on stop part cannot be passed through, so as to form controllable a micro ion injection device or list
Ion implantation apparatus.
Embodiment eight
Such as Figure 12, the present embodiment is relative to embodiment seven, and the structure of its second electrode device is different, wherein second electricity
Pole device 10 includes：Narrow meshed second cantilever beam 104 of needle point, and aperture on needle point is centrally located at the ion gun 1
On axis 3；And second grid bias power supply 102, it is used to be powered for second cantilever beam 104, so that the second cantilever beam 104
Needle point two tops up and down between formed assisting ion deflection electric field.The effect of the electric field of assisting ion deflection and reality
Apply example seven identical, be not repeated.
In the present embodiment, second grid bias power supply is preferably negative bias voltage source, and the negative bias voltage source is used for cantilever beam
Power supply is to produce transverse electric field, and cantilever beam can simultaneously play the barrier effect to the ion for deflecting because needle point is with aperture.
In sum, embodiments of the invention one to embodiment six considers that the ion beam of ion gun transmitting has certain hair
Angle and diameter are dissipated, ion beam is flown into a tapered electric field, so as to only taper will not be subject to along the ion that axis is moved
The effect of the cross stream component of electric field, for not being the ion moved along axis, such as the direction of motion deviates axis certain angle
Ion, or with axis parallel but the ion at off-axis center, will receive tapered electric field cross stream component effect along perpendicular to
Axis direction is deflected, and when ion reaches bottom, just generates lateral displacement, is hit exactly positioned at axis so as to cannot pass through bottom
The aperture of the heart.So it is considerably reduced by aperture ion populations, considerably increases a small number of ions of realization even single ion
By the possibility of aperture, at the same time also ion beam is collimated.Filled in the ion implanting of embodiment one to embodiment six
On the basis of putting, embodiment seven and embodiment eight have carried out the design of ion gate, using produce assisting ion electric field and
Stop part, makes one or several ions pass through, and blocks passing through for later ion, furthermore achieved that a small amount of ion even list
The injection of ion.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, but, the present invention is not limited to above-mentioned reality
The detail in mode is applied, in range of the technology design of the invention, various letters can be carried out to technical scheme
Monotropic type, these simple variants belong to protection scope of the present invention.
It is further to note that each particular technique feature described in above-mentioned specific embodiment, in not lance
In the case of shield, can be combined by any suitable means.In order to avoid unnecessary repetition, the present invention to it is various can
The combination of energy is no longer separately illustrated.
Additionally, can also be combined between a variety of implementation methods of the invention, as long as it is without prejudice to originally
The thought of invention, it should equally be considered as content disclosed in this invention.
Claims (10)
1. a kind of ion implantation apparatus, for injecting ions into sample in, it is characterised in that including：
Ion gun (1), it is used to be generated and transmitted by ion beam (2)；And
First electrode device (5), it is arranged on the ion gun (1) to the path of the sample (4), for producing along described
The tapered electric field (6) of axis (3) directional spreding of ion gun, and make in the ion beam (2) not along the axis of ion gun
(3) ion of direction motion is deflected without note in the presence of the tapered electric field (6) along the direction perpendicular to the axis (3)
Enter the sample (4).
2. ion implantation apparatus according to claim 1, it is characterised in that the first electrode device (5) includes：
With foraminate electric pole plate (501), it is arranged on the ion gun (1) to the path of the sample (4), and is close to
The ion gun (1)；
With foraminate bottom electrode plate (502), it is arranged on the ion gun (1) to the path of the sample (4), and is close to
The sample (4)；And
First grid bias power supply (503), it is used to be powered to the electric pole plate (501) and the bottom electrode plate (502), so that institute
State and formed between electric pole plate (501) and the bottom electrode plate (502) along axis (3) directional spreding of the ion gun (1)
Tapered electric field (6)；
Wherein, the electric pole plate (501) differs with bottom electrode plate (502) size, and the electric pole plate (501) with
On the axis (3) of the ion gun (1), the ion gun (1) is sent out at the center of the aperture on the bottom electrode plate (502)
The ion beam (2) penetrated enters the tapered electric field (6) through the aperture on the electric pole plate (501), along the axis of ion gun
(3) ion of direction motion leaves the tapered electric field (6) through the aperture on bottom electrode plate (502).
3. ion implantation apparatus according to claim 2, it is characterised in that the electric pole plate (501) and the lower electricity
Pole plate (502) is plane electrode plate parallel to each other.
4. ion implantation apparatus according to claim 2, it is characterised in that the electric pole plate (501) and the lower electricity
Pole plate (502) is curved surface electrode plate.
5. ion implantation apparatus according to claim 2, it is characterised in that the electric pole plate (501) and the lower electricity
Pole plate (502) is annular electro polar circle.
6. ion implantation apparatus according to claim 2, it is characterised in that the electric pole plate (501) and the lower electricity
Pole plate (502) is parallel to each other, and the electric pole plate (501) is plane electrode plate, and the bottom electrode plate (502) is needle point center
Narrow meshed cantilever beam.
7. ion implantation apparatus according to claim 1, it is characterised in that the first electrode device (5) includes：
The first cantilever beam (504) with needle point aperture (5042), and the upper and lower surface of first cantilever beam (504) is coated with ring
Shape electrode；And
First grid bias power supply (503), it is used to be powered to the upper and lower surface of the first cantilever beam (504), so that the first cantilever beam
(504) tapered electric field (6) along axis (3) direction of the ion gun (1) is formed between upper and lower surface；
Wherein, the center of the needle point aperture (5042) is on the axis (3) of the ion gun (1), ion gun (1) hair
The ion beam (2) penetrated enters the tapered electric field (6) through the upper end of needle point aperture (5042), along axis (3) side of ion gun
To the ion of motion the tapered electric field (6) is left through the lower end of needle point aperture (5042).
8. ion implantation apparatus according to any one of claim 1 to 7, it is characterised in that the ion implantation apparatus
Also include：
Second electrode device (10), its downstream for being arranged on the first electrode device (5), for producing what assisting ion was deflected
Electric field, when the electric field is applied in, the ion for entering second electrode device (10) along axis (3) direction deflects and is not injected into
The sample (4), and the electric field is when being applied in, the ion for entering second electrode device (10) along axis (3) direction is passed through
Second electrode device (10) is simultaneously injected into the sample (4).
9. ion implantation apparatus according to claim 8, it is characterised in that the second electrode device (10) includes：
Electrode pair (101), its downstream for being arranged on the first electrode device (5), for the electric field for producing assisting ion to deflect；
Second grid bias power supply (102), it powers in the electrode pair (101), so as to form institute between the electrode pair (101)
State the electric field of assisting ion deflection；And
With foraminate stop part (103), the lower end of its electric field for being arranged on the assisting ion deflection, and it is close to the sample
(4) aperture, and on the stop part (103) is centrally located on the axis of the ion gun (1) (3).
10. ion implantation apparatus according to claim 8, it is characterised in that the second electrode device (10) includes：
Narrow meshed second cantilever beam (104) of needle point, and aperture on needle point is centrally located at the axis of the ion gun (1)
(3) on；And
Second grid bias power supply (102), it is used to be powered for second cantilever beam (104), so that the pin of the second cantilever beam (104)
The electric field of assisting ion deflection is formed between two tops up and down of point.
Priority Applications (1)
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| CN115637414A (en) * | 2022-10-31 | 2023-01-24 | 江苏省特种设备安全监督检验研究院 | Ultrasonic-assisted ion implantation device and processing method |
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| CN101930894A (en) * | 2009-06-19 | 2010-12-29 | 东京毅力科创株式会社 | Charged particle separation apparatus and charged particle bombardment apparatus |
| CN204834561U (en) * | 2015-07-16 | 2015-12-02 | 周向前 | Ion implantation device |
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| KR100351248B1 (en) * | 1994-07-06 | 2002-12-11 | 주식회사 하이닉스반도체 | Ion implantation method and apparatus using electric field |
| JP4560785B2 (en) * | 2005-03-16 | 2010-10-13 | 国立大学法人京都大学 | Ion source, hole formation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101930894A (en) * | 2009-06-19 | 2010-12-29 | 东京毅力科创株式会社 | Charged particle separation apparatus and charged particle bombardment apparatus |
| CN204834561U (en) * | 2015-07-16 | 2015-12-02 | 周向前 | Ion implantation device |
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