CN105002554B - A kind of low-temperature epitaxy becomes the liquid phase epitaxy method of component gallium arsenic-antimony thin film - Google Patents
A kind of low-temperature epitaxy becomes the liquid phase epitaxy method of component gallium arsenic-antimony thin film Download PDFInfo
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Abstract
The invention discloses the liquid phase epitaxy method that a kind of low-temperature epitaxy becomes component gallium arsenic-antimony thin film.This method is comprised the following steps that：The first step, melts the weighing in source, and second step melts the high-temperature fusion twice in source, the 3rd step：Growth.The method be characterized in that Sb components are not prepared according to phasor.The advantage of the invention is that：GaAs can at low temperature be obtained1‑xSbxBecome component film, and preparation process is simple, process costs are low, and crystal mass is high.
Description
Technical field
The invention belongs to medium-wave infrared material for detector and devices field, and in particular to use Traditional liquid phase epitaxy technology system
Standby GaAs grown at low temperature base becomes component GaAs1-xSbxThin-film material.
Background technology
GaAsSb/GaAs SQWs have very big application potential [1,2] in photoelectric device and electronic device, this be because
For the band structure of GaAsSb/GaAs SQWs has huge change with the increase of Sb components.It is dense by changing Sb components
Degree can not only adjust bandwidth, can be arranged in conversion [3-7] between a type and two types with quantum well energy band.It is different
Can band arrangement have different physical properties, this is also that GaAsSb/GaAs SQWs attract domestic and international brainstrust to go what is studied
One of the main reasons.
Because As atoms and the different bonding behavior [8] during film is generated of Sb atoms make the molten source of mixing 745
DEG C when 0.32<x<Miscibility gap (solid-phase miscibility gap) is occurred in that in the range of 0.62, at this
Cannot form GaAsSb ternary films in interval, and with the reduction of temperature, the interval gradually expansion of miscibility gap [9,
10], and with the increase of As components, the temperature of rheotaxial growth film also can therewith increase [11].So, make by liquid
Phase epitaxy method grown at low temperature becomes component GaAs1-xSbxFilm becomes extremely difficult.GaAsSb tri- so far less than 600 DEG C
First phasor does not almost have, therefore becomes component GaAs by liquid phase epitaxy law technology low-temperature epitaxy1-xSbxFilm is difficult by phasor,
Can only look for another way.
Melting by improving the molten source in liquid phase epitaxial technique of the invention, the growthing process parameter of epitaxial film,
Change the constituent content of Sb with the principle adulterated, high-quality change component GaAs is successfully grown at 545 DEG C1-xSbxFilm.
Cited document is as follows：
[1]P.-J.Niu,H.H.H.-W.Dong,W.Wang,and J.Zhou,Proc.SPIE 5624,630(2005).
[2]X.Sun,S.Wang,X.G.Zheng,X.Li,J.C.Campbell,and A.L.Holmes,Jr.,
J.Appl.Phys.93,774(2003).
[3]G.Liu,S.-L.Chuang,and S.-H.Park,J.Appl.Phys.88,5554(2000).
[4]R.Teissier,D.Sicault,J.C.Harmand,G.Ungaro,G.L.Roux,and L.Largeau,
J.Appl.Phys.89,5473(2001).
[5]M.Dinu,J.E.Cunningham,F.Quochi,and J.Shah,J.Appl.Phys.94,1506
(2003).
[6]X.D.Luo,C.Y.Hu,Z.Y.Xu,H.L.Luo,Y.Q.Wang,J.N.Wang,and W.K.Ge,
Appl.Phys.Lett.81,3795(2002).
[7]G.Ji,S.Agarwala,D.Huang,J.Chyi,and H.Morko,Phys.Rev.B38,10571
(1988).
[8] Jian-Ming Lin, Li-Chang Chou, and Hao-Hsiung Lin, J.Vac.Sci.Technol.B
29(2)(2011)
[9]M.F.Gratton and J.C.Woolley,J.Electrochem.Soc.127,55(1980)
[10]J.R.Pessetto and G.B.Stringfellow,J.Cryst.Growth 62,1(1983).
[11] H.Mani, A.JouHie, F.Karouta, and C.Schiller, J.Appl.Phys., Vol.59, No.8
(1986).
The content of the invention
It is an object of the invention to provide the liquid phase epitaxial technique that a kind of low-temperature epitaxy becomes component gallium arsenic-antimony thin film, liquid is solved
Phase epitaxy technology cannot low temperature preparation change component GaAs1-xSbxThe problem of thin-film material.
Described low temperature refers to that film growth temperature is less than 550 DEG C in the present invention, and it refers to GaAs to become component1-xSbxIn film
Sb constituent contents x can change between 0-0.15.
Change component GaAs of the present invention1-xSbxThe preparation method of thin-film material is comprised the following steps：
The first step, melts the weighing in source.Molten three parts of the source components of 550 DEG C of GaAs of identical gross mass are prepared according to phasor.Then
0.5%, 1%, the 1.5% of the molten source gross masses of GaAs Sb components are weighed respectively.
Second step, melts the high-temperature fusion twice in source.The molten sources of three parts of GaAs are melted 3h by first time high temperature melting source at 650 DEG C,
Then being cooled to 550 DEG C and pushing away boat makes molten source be contacted with GaAs single crystalline substrates to obtain the molten source of stably component, then heats up again
Well mixed initially molten source material is obtained to 650 DEG C of constant temperature 1h；Three parts of purity are the Sb powder of 7N by second high-temperature fusion
Three parts of initially molten source and constant temperature 2 hours at 650 DEG C are separately added into, obtain growing molten source.
3rd step：Growth technique is as follows, by the molten source of the constant temperature growth of 2 hours at 650 DEG C with the cooling speed of 10 DEG C/min
Rate is cooled to 548 DEG C, and constant temperature 15 minutes, then with the rate of temperature fall cooling 15min of 0.2 DEG C/min, then promotes sliding boat to make to melt
Source and GaAs substrate contacts, carry out becoming component GaAs1-xSbxThe growth 5min of film, finally pushes molten source open and obtains change component
GaAs1-xSbxFilm.
It is an advantage of the invention that：Can obtain becoming component GaAs at low temperature1-xSbxEpitaxial film, crystal mass is excellent,
It is with low cost and preparation is simple.
Brief description of the drawings
Fig. 1 is to become component GaAs1-xSbxThe HRXRD spectrums of epitaxial film.
Fig. 2 is GaAs substrates and becomes component GaAs1-xSbxFourier's infrared transmission spectra after epitaxial film normalization.
Specific embodiment
Specific embodiment of the invention is described in further detail below in conjunction with the accompanying drawings：
First, molten three parts of the source of 550 DEG C of GaAs saturations of phase homogenous quantities, the molten source that will be cleaned and corroded are prepared according to phasor
Material (Ga of 7N, the GaAs single-chips of undoped) and undoped GaAs single crystalline substrates are put into the corresponding cavity of graphite boat, dress
In entering quartz ampoule, it is rapidly heated to 650 DEG C and constant temperature 3 hours with the speed of 15 DEG C/min, is then dropped with the speed of 10 DEG C/min
Temperature is to 570 DEG C, and pushing away boat makes molten source contact 12min with GaAs single crystalline substrates, 650 DEG C of constant temperature 1h is then warmed up to again, afterwards
Opening fan makes molten source temperature quickly be down to room temperature, obtains determining the initially molten source material of proportioning.Then, initially molten source is weighed respectively
The Sb powder of 0.5%, 1%, the 1.5% of gross mass is added in corresponding initially molten source, is rapidly heated with the speed of 15 DEG C/min
To 650 DEG C and constant temperature 2 hours, making to be opened fan after each component in molten source is well mixed makes molten source temperature quickly be down to room temperature, obtains
To the molten source of growth.Different molten sources are chosen to start to grow the GaAs of different component1-xSbxFilm, growth temperature is 545 DEG C or so
Adjusted with the difference of Sb components, growth time is 5min, rate of temperature fall is 0.2 DEG C/min.The change component GaAs for obtaining1- xSbxThin film parameter is as follows：
Claims (1)
1. a kind of low-temperature epitaxy becomes the liquid phase epitaxy method of component gallium arsenic-antimony thin film, it is characterised in that method and step is as follows：
The first step, melts the weighing in source, prepares molten three parts of the source components of 550 DEG C of GaAs of identical gross mass according to phasor, then basis
Doping principle weighs the Sb components of 0.5%, 1%, the 1.5% of the molten source gross masses of GaAs respectively；
Second step, melts the high-temperature fusion twice in source, and the molten sources of three parts of GaAs are melted 3h by first time high temperature melting source at 650 DEG C, then
Being cooled to 550 DEG C and pushing away boat makes molten source be contacted with GaAs single crystalline substrates to obtain the molten source of stably component, and 650 are then warmed up to again
DEG C constant temperature 1h obtains well mixed initially molten source material；Second high-temperature fusion, by three parts of purity for the Sb powder of 7N is distinguished
Three parts of initially molten source and constant temperature 2 hours at 650 DEG C are added, obtains growing molten source；
3rd step：Growth technique is as follows, will be lowered the temperature with the rate of temperature fall of 10 DEG C/min in the molten source of 650 DEG C of constant temperature growth of 2 hours
To growth temperature, growth temperature will have been adjusted with the difference of Sb components, constant temperature 15 minutes, then with the cooling of 0.2 DEG C/min
Speed cooling 15min, then promotes sliding boat to make molten source and GaAs substrate contacts, and GaAs is carried out under 545 DEG C of growth temperatures1-xSbx
The growth 5min of film, finally pushes molten source open and obtains GaAs1-xSbxFilm.
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| JP2000086379A (en) * | 1998-09-11 | 2000-03-28 | Hamamatsu Photonics Kk | Single crystal of indium arsenic antimony |
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| CN101275280A (en) * | 2007-12-21 | 2008-10-01 | 中国科学院上海技术物理研究所 | Preparation for InAsSb thick film material |
| CN102347221A (en) * | 2011-10-18 | 2012-02-08 | 中国科学院上海技术物理研究所 | Rheotaxial preparation method of gallium antimonide quantum dot |
| CN102677162A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Full-automatic control liquid phase epitaxy device and control method |
| CN102732951A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for solidifying gallium-rich gallium arsenide melt used for liquid phase epitaxy |
| CN104032375A (en) * | 2014-01-17 | 2014-09-10 | 中国科学院上海技术物理研究所 | Method for preparing indium-arsenic-nitrogen film with high-nitrogen component based on liquid-phase epitaxy technology |
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- 2015-06-02 CN CN201510295832.5A patent/CN105002554B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000086379A (en) * | 1998-09-11 | 2000-03-28 | Hamamatsu Photonics Kk | Single crystal of indium arsenic antimony |
| CN1783434A (en) * | 2004-12-03 | 2006-06-07 | 中国科学院半导体研究所 | Liquid phase epitaxial growth method for growing indium-arsenic-antimony thin film on gallium-arenic substrate |
| CN101275280A (en) * | 2007-12-21 | 2008-10-01 | 中国科学院上海技术物理研究所 | Preparation for InAsSb thick film material |
| CN102347221A (en) * | 2011-10-18 | 2012-02-08 | 中国科学院上海技术物理研究所 | Rheotaxial preparation method of gallium antimonide quantum dot |
| CN102677162A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Full-automatic control liquid phase epitaxy device and control method |
| CN102732951A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for solidifying gallium-rich gallium arsenide melt used for liquid phase epitaxy |
| CN104032375A (en) * | 2014-01-17 | 2014-09-10 | 中国科学院上海技术物理研究所 | Method for preparing indium-arsenic-nitrogen film with high-nitrogen component based on liquid-phase epitaxy technology |
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| Characteristics of indium-doped GaAs layers grown by liquid phase epitaxy with indium content in the range (0.3-7)x1019cm-3;S. Dhar,et al.;《Journal of Applied Physics》;19910315;第69卷(第6期);第3578-3582页 * |
| Electron traps in GaAsSb grown by liquid phase epitaxy;S. Dhar,et al.;《Journal of Applied Physics》;19950215;第77卷(第4期);第1531-1535页 * |
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