CN104993812A - High-isolation radio frequency switch with wave trap structure - Google Patents

High-isolation radio frequency switch with wave trap structure Download PDF

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CN104993812A
CN104993812A CN201510430671.6A CN201510430671A CN104993812A CN 104993812 A CN104993812 A CN 104993812A CN 201510430671 A CN201510430671 A CN 201510430671A CN 104993812 A CN104993812 A CN 104993812A
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oxide
semiconductor
metal
resistance
inductance
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CN104993812B (en
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刘成鹏
王国强
何峥嵘
邹伟
蒲颜
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CETC 24 Research Institute
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Abstract

The invention discloses a high-isolation radio frequency switch with a wave trap structure. The high-isolation radio frequency switch comprises a basic matching type single-pole single-throw switch radio frequency switch unit and a T-shaped bridge wave trap unit. According to the high-isolation radio frequency switch disclosed by the invention, resistance R7b, bonding wire parasitic inductance L2b, bonding wire parasitic inductance L4b and inductance L3b are added on the basis of the basic matching type single-pole single-throw switch radio frequency switch unit. When the radio frequency switch is at a turned off state, when inductance L2b+3b+4b formed by serially connecting the inductance L2b, the inductance L4b and the inductance L3b, a MOS tube M1b and a MOS tube M2b are at the turned off state, parasitic capacitance formed between source and drain electrodes, parasitic resistance formed between the source and drain electrodes when a MOS tube M4b is at a turned on state and the resistance R7b form the T-shaped bridge wave trap structure. The values of the resistance R7b and the inductance L3b of the T-shaped bridge wave trap are adjusted to specifically determine necessary blanketing frequency, and this topological structure can be used for obtaining isolation 10-15dB higher than that of a traditional radio frequency switch at a selected frequency band.

Description

There is the high-isolation radio-frequency (RF) switch of trapper structure
Technical field
The present invention relates to a kind of radio-frequency (RF) switch, particularly a kind of high-isolation radio-frequency (RF) switch with trapper structure, it directly applies to all kinds of radio-frequency (RF) switch fields in microwave IC.
Background technology
Radio-frequency (RF) switch is the control device for controlling radio signal transmission path, that communication isoelectronic series system realizes high performance critical component, used widely in the business RF communication system such as honeycomb GSM, UMTS, cable modem, direct broadcast system, point-to-point and Point To Multipoint Multicast system and the military field such as radar, electronic countermeasures, along with the increase of information transmission complex characteristics, the requirement of radio frequency switch isolation degree, bandwidth of operation, integrability also improves constantly.
Conventional radio frequency switch as shown in Figure 1, owing to usually adopting standard CMOS/BiCMOS technique restriction, is needed to be connected to ground by bonding wire, due to the impact of bonding wire stray inductance, causes the isolation of radio-frequency (RF) switch to reduce with making the reference of radio-frequency (RF) switch.Parasitic parameter between being connected to ground to the reference of radio-frequency (RF) switch is less, and the impact of radio frequency switch performance is less.In practice, the stray inductance L that the bonding wire be connected to ground is introduced 1avalue is generally 0.3 ~ 0.5nH.
Isolation, as the critical index of radio-frequency (RF) switch, directly determines radio-frequency (RF) switch performance and application, and in order to obtain better isolation index, the techniques such as GaAs/GaN introduce ground through hole to replace bonding wire, achieve good effect.But due to GaAs/GaN technique, to there is cost higher, and the deficiencies such as control level is high, integrated level is lower, along with signal processing system is more and more to low price, low pressure, integrated development, its application is very limited.
And under standard processing conditions, in order to improve the isolation of radio-frequency (RF) switch, the general method adopting increase radio-frequency (RF) switch connection in series-parallel FET transistor progression, such a process increases the complexity of radio-frequency (RF) switch mechanism, not only can the chip area of increasing circuit, and owing to adding series and parallel connections FET transistor progression on signal path, cause insertion loss to become large, the series of problems such as bandwidth of operation narrows, I/O standing-wave ratio variation.
Summary of the invention
Given this, the invention provides a kind of high-isolation radio-frequency (RF) switch with trapper structure, by utilizing transistor OFF state parasitic capacitance, the T-shaped trapper unit of RF switching unit and bridge being combined, radio-frequency (RF) switch is improved at the isolation of selected frequency range.
For achieving the above object, the invention provides following technical scheme: a kind of high-isolation radio-frequency (RF) switch with trapper structure, comprises single-pole single-throw(SPST RF switching unit, and described single-pole single-throw(SPST RF switching unit comprises metal-oxide-semiconductor M 1b, metal-oxide-semiconductor M 2b, metal-oxide-semiconductor M 3b, metal-oxide-semiconductor M 4b, metal-oxide-semiconductor M 5brespectively with metal-oxide-semiconductor M 4bsource electrode, metal-oxide-semiconductor M 5bsource electrode connect bonding wire stray inductance L 1b, described radio-frequency (RF) switch also comprises the T-shaped trap wave unit of bridge, and the T-shaped trap wave unit of described bridge comprises bonding wire stray inductance L 2b, inductance L 3b, bonding wire stray inductance L 4b, resistance R 7b, metal-oxide-semiconductor M 1bwith metal-oxide-semiconductor M 2bthe parasitic capacitance formed between source electrode and drain electrode when OFF state and metal-oxide-semiconductor M 4bthe dead resistance formed between source electrode and drain electrode when conducting state; Described bonding wire stray inductance L 2b, inductance L 3b, bonding wire stray inductance L 4bmetal-oxide-semiconductor M is parallel to after connecting successively 1bdrain electrode and metal-oxide-semiconductor M 2bsource electrode between, bonding wire stray inductance L 2bwith metal-oxide-semiconductor M 1bdrain electrode connect, bonding wire stray inductance L 4bwith metal-oxide-semiconductor M 2bsource electrode connect, described resistance R 7bbe series at metal-oxide-semiconductor M 4bsource electrode and bonding wire stray inductance L 1bbetween, bonding wire stray inductance L 1bground connection.
Preferably, described single-pole single-throw(SPST RF switching unit also comprises resistance R 1b, resistance R 2b, resistance R 3b, resistance R 4b, resistance R 5b, and resistance R 6b, described metal-oxide-semiconductor M 1bdrain electrode and signal input part V iNconnect, metal-oxide-semiconductor M 1bsource electrode and metal-oxide-semiconductor M 2bdrain electrode connect, metal-oxide-semiconductor M 2bsource electrode and metal-oxide-semiconductor M 3bdrain electrode connect, metal-oxide-semiconductor M 3bsource electrode be connected with signal output part, described metal-oxide-semiconductor M 1bgrid through resistance R 1bbe connected with the first control end, metal-oxide-semiconductor M 2bgrid through resistance R 2bbe connected with the first control end, metal-oxide-semiconductor M 2bgrid through resistance R 3bbe connected with the first control end; Described metal-oxide-semiconductor M 4bdrain electrode respectively with metal-oxide-semiconductor M 1bsource electrode, metal-oxide-semiconductor M 2bdrain electrode connect, metal-oxide-semiconductor M 4bgrid through resistance R 4bbe connected with the second control end; Described metal-oxide-semiconductor M 5bdrain electrode respectively with metal-oxide-semiconductor M 2bsource electrode, metal-oxide-semiconductor M 3bdrain electrode connect, metal-oxide-semiconductor M 5bgrid through resistance R 5bbe connected with the second control end, metal-oxide-semiconductor M 5bsource electrode through bonding wire stray inductance L 1bground connection; Described resistance R 6bbe parallel to metal-oxide-semiconductor M 3bsource electrode and drain electrode between.
Owing to have employed above technical scheme, the present invention has following Advantageous Effects:
The present invention adds resistance R on the basis of basic matched single-pole single-throw(SPST RF switching unit 7b, bonding wire stray inductance L 2b, bonding wire stray inductance L 4band inductance L 3b.When radio-frequency (RF) switch is OFF state, inductance L 2b, inductance L 4band inductance L 3bbe in series the inductance L formed 2b+3b+4bwith metal-oxide-semiconductor M 1b, metal-oxide-semiconductor M 2bthe parasitic capacitance formed between source-drain electrode when OFF state, with metal-oxide-semiconductor M 4bthe dead resistance formed between source-drain electrode when conducting state and resistance R 7bform the T-shaped trapper structure of bridge.By adjustment bridge T-shaped trapper resistance R 7band inductance L 3bvalue can determine required blanketing frequency targetedly, use this topological structure can obtain the isolation of 10 ~ 15dB higher than conventional radio frequency switch in selected frequency range.
Because circuit of the present invention is when radio-frequency (RF) switch is conducting state, form bridge T-shaped trapper unit metal-oxide-semiconductor M 1bwith metal-oxide-semiconductor M 2bparasitic parameter is now mainly the dead resistance between source-drain electrode, and resistance value is very little, by optimizing inductance L 3bvalue, inductance L 2b+3b+4bbranch impedance value, much larger than radio-frequency (RF) switch signal path, therefore can not affect the electrical characteristics such as radio-frequency (RF) switch insertion loss substantially, avoids the problems such as insertion loss, input 1dB compression point, input voltage standing-wave ratio, the deterioration of output voltage standing-wave ratio.
Accompanying drawing explanation
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail, wherein:
Fig. 1 is conventional radio frequency switching circuit figure;
Fig. 2 is the high-isolation radio-frequency switch circuit figure that the present invention has trapper structure.
Fig. 3 is the T-shaped trapper unit of bridge of the present invention.
Fig. 4 is that the present invention and conventional radio frequency switch insertion loss contrast schematic diagram.
Fig. 5 is that the present invention and conventional radio frequency switch isolation degree contrast schematic diagram.
Embodiment
Below with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail; Should be appreciated that preferred embodiment only in order to the present invention is described, instead of in order to limit the scope of the invention.
What the present invention specifically implemented has the circuit diagram of the high-isolation radio-frequency (RF) switch of trapper structure as shown in Figure 2.It comprises a basic matched single-pole single-throw(SPST RF switching unit and a T-shaped trapper unit of bridge.
Described single-pole single-throw(SPST RF switching unit comprises metal-oxide-semiconductor M 1b, metal-oxide-semiconductor M 2b, metal-oxide-semiconductor M 3b, metal-oxide-semiconductor M 4b, metal-oxide-semiconductor M 5b, resistance R 1b, resistance R 2b, resistance R 3b, resistance R 4b, resistance R 5b, resistance R 6bwith bonding wire stray inductance L 1b.Wherein, metal-oxide-semiconductor M 1bdrain electrode and signal input part V iNbe connected, metal-oxide-semiconductor M 1bsource electrode respectively with metal-oxide-semiconductor M 2bdrain electrode, metal-oxide-semiconductor M 4bdrain electrode be connected, metal-oxide-semiconductor M 2bsource electrode respectively with metal-oxide-semiconductor M 3bdrain electrode, metal-oxide-semiconductor M 5bdrain electrode, resistance R 6bone end be connected, tie point is D, metal-oxide-semiconductor M 3bsource electrode respectively with resistance R 6bthe other end, signal output part V oUTconnect, metal-oxide-semiconductor M 4bsource electrode and resistance R 7bone end is connected, resistance R 7bthe other end respectively with metal-oxide-semiconductor M 5bsource electrode, bonding wire stray inductance L 1bone end is connected, and tie point is C, bonding wire stray inductance L 1bother end ground connection.Resistance R 1bone end and metal-oxide-semiconductor M 1bgrid is connected, resistance R 1bthe other end respectively with the first control end B, resistance R 2bone end, resistance R 3bone end connect, resistance R 2bthe other end and metal-oxide-semiconductor M 2bgrid connect, resistance R 3bthe other end and metal-oxide-semiconductor M 3bgrid connect, resistance R 4bone end and metal-oxide-semiconductor M 4bgrid be connected, resistance R 4bthe other end be connected with the first control end A, resistance R 5bone end and metal-oxide-semiconductor M 5bgrid be connected, resistance R 5bthe other end be connected with the first control end A.
The T-shaped trapper unit of described bridge comprises bonding wire stray inductance L 2b, inductance L 3b, bonding wire stray inductance L 4b, resistance R 7b, metal-oxide-semiconductor M 1bwith metal-oxide-semiconductor M 2bthe parasitic capacitance formed between source electrode and drain electrode when OFF state, metal-oxide-semiconductor M 4bthe dead resistance formed between source electrode and drain electrode when conducting state.Wherein, bonding wire stray inductance L 2bone end and metal-oxide-semiconductor M 1bdrain electrode and signal input part V iNconnect, bonding wire stray inductance L 2bthe other end and inductance L 3bone end be connected, inductance L 3bthe other end and bonding wire stray inductance L 4bone end be connected, bonding wire stray inductance L 4bthe other end be connected with D point.
The operation principle of circuit of the present invention is as follows:
The on off state of radio-frequency (RF) switch is controlled, as metal-oxide-semiconductor M by the first control end B and the second control end A 1b, metal-oxide-semiconductor M 2b, metal-oxide-semiconductor M 3bfor conducting state, metal-oxide-semiconductor M 4bwith metal-oxide-semiconductor M 5bduring for off state, radio-frequency (RF) switch operating state is conducting, and radiofrequency signal passes through V iNafter port enters radio-frequency (RF) switch, due to metal-oxide-semiconductor be conducting state time, show as low resistance resistor between source electrode and drain electrode, and now bonding wire stray inductance L 2b, bonding wire stray inductance L 4band inductance L 3bbe in series the inductance L formed 2b+3b+4bradio frequency signal presents high impedance, and radiofrequency signal is successively by metal-oxide-semiconductor M 1bdrain electrode and source electrode, metal-oxide-semiconductor M 2bdrain electrode and source electrode arrive D point.Due to resistance R 6bgeneral value is 50 ohm, relative to the metal-oxide-semiconductor M of conducting state 3bfor high impedance, radiofrequency signal passes through M from D point 3bdrain electrode and source electrode, from V oUTport exports.
As metal-oxide-semiconductor M 1b, metal-oxide-semiconductor M 2b, metal-oxide-semiconductor M 3bfor off state, metal-oxide-semiconductor M 4bwith metal-oxide-semiconductor M 5bduring for conducting state, radio-frequency (RF) switch operating state is for turning off, and the radiofrequency signal of reflection passes through V oUTafter port enters radio-frequency (RF) switch, due to metal-oxide-semiconductor M 3bfor off state, radio frequency signal presents high-impedance state, and with metal-oxide-semiconductor M 3bresistance R in parallel 6bgenerally be about 50 ohm, play impedance matching effect, radiofrequency signal is by resistance R 6bpass through.Metal-oxide-semiconductor M 2bhigh-impedance state is presented, inductance L for turning off 2b+3b+4bbranch impedance value is also much larger than the metal-oxide-semiconductor M for conducting state 5b, radiofrequency signal is by metal-oxide-semiconductor M 5barrive C point after drain electrode and source electrode, and small part radiofrequency signal is by after the T-shaped trapper unit of bridge, by V iNport exports.
Bonding wire stray inductance L 2b, bonding wire stray inductance L 4b, inductance L 3b, resistance R 7b, metal-oxide-semiconductor M 1bwith metal-oxide-semiconductor M 2bthe parasitic capacitance C formed between source-drain electrode when OFF state m1band C m2b, metal-oxide-semiconductor M 4bthe dead resistance formed between source-drain electrode when conducting state forms the T-shaped trapper structure of bridge, due to bonding wire stray inductance L 2b, bonding wire stray inductance L 4bwith inductance L 3bseries connection, it can be equivalent to inductance L 2b+3b+4b, resistance R 7bwith metal-oxide-semiconductor M 4bthe dead resistance formed between source electrode with drain electrode when conducting state is connected, and it can be equivalent to resistance R 7b+M4b, as shown in Figure 3.
Trapper can suppress the signal of certain frequency range, when being combined with radio-frequency (RF) switch, when off state, equals to improve the isolation of radio-frequency (RF) switch in this frequency.By adjusting resistance R 7band inductance L 3bvalue, radio-frequency (RF) switch isolation at different frequencies can be improved targetedly.
Resistance R 1bwith metal-oxide-semiconductor M 1bgrid connect, its resistance is generally 3 ~ 8K Ω; Resistance R 2bwith metal-oxide-semiconductor M 2bgrid connect, its resistance is generally 3 ~ 8K Ω; Resistance R 3bwith metal-oxide-semiconductor M 3bgrid connect, its resistance is generally 3 ~ 8K Ω; Resistance R 4bwith metal-oxide-semiconductor M 4bgrid connect, its resistance is generally 3 ~ 8K Ω; Resistance R 5bwith metal-oxide-semiconductor M 5bgrid be connected, its resistance is generally 3 ~ 8K Ω; Resistance R 1b~ resistance R 5bfor providing enough isolation between the grid of MOS transistor and the first control end B or the second control end A.
When radio-frequency (RF) switch is conducting state, radiofrequency signal is from V oUTport output signal amplitude with from V iNthe ratio into amplitude output signal is held to be the insertion loss of radio-frequency (RF) switch, Fig. 4 is that the present invention and conventional radio frequency switch insertion loss contrast, "○" is the relation curve between the insertion loss of conventional radio frequency switch and frequency, and " △ " is the relation curve between high-isolation radio-frequency (RF) switch insertion loss of the present invention and frequency.
When radio-frequency (RF) switch is off state, by V iNport output signal amplitude with pass through V oUTthe ratio of port input/output signal amplitude, be the isolation of radio-frequency (RF) switch, Fig. 5 is that the present invention and conventional radio frequency switch isolation degree contrast, "○" is the relation curve between the isolation of conventional radio frequency switch and frequency, and " △ " is the relation curve between high-isolation radio-frequency (RF) switch isolation of the present invention and frequency.
The basic parameter of the metal-oxide-semiconductor in circuit of the present invention, resistance, electric capacity, inductance is:
Gate oxide thickness 7.2nm ~ the 8.4nm of metal-oxide-semiconductor;
Metal-oxide-semiconductor: ︱ V gs︱: 0 ~ 5V, ︱ V ds︱: 0 ~ 5V, ︱ V bs︱: 0 ~ 5V.
M 1b, M 2b, M 3b, M 4b, M 5bgrid width: 0.35 μm;
M 1b, M 2b, M 3b, M 4b, M 5bgrid long: 200 μm;
Resistance R 1b, R 2b, R 3b, R 4b, R 5bfor polysilicon high value resistance, resistance R 6b, R 7bfor polysilicon resistance.
R 1b, R 2b, R 3b, R 4b, R 5bwidth be 10 μm;
R 1b, R 2b, R 3b, R 4b, R 5blength be 50 μm;
R 6b, R 7bwidth be 50 μm;
R 6blength be 24 μm;
R 7blength be 29 μm;
Bonding wire stray inductance L 1b, bonding wire stray inductance L 2bwith bonding wire stray inductance L 4bestimated value is 0.3nH;
Inductance L 3bfor chip coiling high-frequency inductor, inductance is: 10nH.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.

Claims (2)

1. have a high-isolation radio-frequency (RF) switch for trapper structure, comprise single-pole single-throw(SPST RF switching unit, described single-pole single-throw(SPST RF switching unit comprises metal-oxide-semiconductor M 1b, metal-oxide-semiconductor M 2b, metal-oxide-semiconductor M 3b, metal-oxide-semiconductor M 4b, metal-oxide-semiconductor M 5brespectively with metal-oxide-semiconductor M 4bsource electrode, metal-oxide-semiconductor M 5bsource electrode connect bonding wire stray inductance L 1b, it is characterized in that: described radio-frequency (RF) switch also comprises the T-shaped trap wave unit of bridge, the T-shaped trap wave unit of described bridge comprises bonding wire stray inductance L 2b, inductance L 3b, bonding wire stray inductance L 4b, resistance R 7b, metal-oxide-semiconductor M 1bwith metal-oxide-semiconductor M 2bthe parasitic capacitance formed between source electrode and drain electrode when OFF state and metal-oxide-semiconductor M 4bthe dead resistance formed between source electrode and drain electrode when conducting state; Described bonding wire stray inductance L 2b, inductance L 3b, bonding wire stray inductance L 4bmetal-oxide-semiconductor M is parallel to after connecting successively 1bdrain electrode and metal-oxide-semiconductor M 2bsource electrode between, bonding wire stray inductance L 2bwith metal-oxide-semiconductor M 1bdrain electrode connect, bonding wire stray inductance L 4bwith metal-oxide-semiconductor M 2bsource electrode connect, described resistance R 7bbe series at metal-oxide-semiconductor M 4bsource electrode and bonding wire stray inductance L 1bbetween, bonding wire stray inductance L 1bground connection.
2. the high-isolation radio-frequency (RF) switch with trapper structure according to claim 1, is characterized in that: described single-pole single-throw(SPST RF switching unit also comprises resistance R 1b, resistance R 2b, resistance R 3b, resistance R 4b, resistance R 5b, and resistance R 6b, described metal-oxide-semiconductor M 1bdrain electrode and signal input part V iNconnect, metal-oxide-semiconductor M 1bsource electrode and metal-oxide-semiconductor M 2bdrain electrode connect, metal-oxide-semiconductor M 2bsource electrode and metal-oxide-semiconductor M 3bdrain electrode connect, metal-oxide-semiconductor M 3bsource electrode be connected with signal output part, described metal-oxide-semiconductor M 1bgrid through resistance R 1bbe connected with the first control end, metal-oxide-semiconductor M 2bgrid through resistance R 2bbe connected with the first control end, metal-oxide-semiconductor M 2bgrid through resistance R 3bbe connected with the first control end; Described metal-oxide-semiconductor M 4bdrain electrode respectively with metal-oxide-semiconductor M 1bsource electrode, metal-oxide-semiconductor M 2bdrain electrode connect, metal-oxide-semiconductor M 4bgrid through resistance R 4bbe connected with the second control end; Described metal-oxide-semiconductor M 5bdrain electrode respectively with metal-oxide-semiconductor M 2bsource electrode, metal-oxide-semiconductor M 3bdrain electrode connect, metal-oxide-semiconductor M 5bgrid through resistance R 5bbe connected with the second control end, metal-oxide-semiconductor M 5bsource electrode through bonding wire stray inductance L 1bground connection; Described resistance R 6bbe parallel to metal-oxide-semiconductor M 3bsource electrode and drain electrode between.
CN201510430671.6A 2015-07-21 2015-07-21 High-isolation RF switch with trapper structure Active CN104993812B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109194291A (en) * 2018-09-06 2019-01-11 南京国博电子有限公司 A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality
CN109327194A (en) * 2018-09-06 2019-02-12 南京国博电子有限公司 A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality
CN113824466A (en) * 2021-08-30 2021-12-21 电子科技大学 Ultra-wideband radio frequency transceiving switch adopting novel clamping resistor

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CN1122534A (en) * 1994-08-29 1996-05-15 株式会社日立制作所 Low distortion switch
US5731607A (en) * 1995-04-24 1998-03-24 Sony Corporation Semiconductor integrated circuit device
EP2001130A1 (en) * 2007-06-05 2008-12-10 Saab Ab Monolithic microwave integrated circuit power converter and gate driver circuit
CN104733809A (en) * 2013-12-24 2015-06-24 株式会社村田制作所 Switching Circuit And Semiconductor Module

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Publication number Priority date Publication date Assignee Title
CN1122534A (en) * 1994-08-29 1996-05-15 株式会社日立制作所 Low distortion switch
US5731607A (en) * 1995-04-24 1998-03-24 Sony Corporation Semiconductor integrated circuit device
EP2001130A1 (en) * 2007-06-05 2008-12-10 Saab Ab Monolithic microwave integrated circuit power converter and gate driver circuit
CN104733809A (en) * 2013-12-24 2015-06-24 株式会社村田制作所 Switching Circuit And Semiconductor Module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109194291A (en) * 2018-09-06 2019-01-11 南京国博电子有限公司 A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality
CN109327194A (en) * 2018-09-06 2019-02-12 南京国博电子有限公司 A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality
CN113824466A (en) * 2021-08-30 2021-12-21 电子科技大学 Ultra-wideband radio frequency transceiving switch adopting novel clamping resistor

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