CN104977964A - Free-operational amplifier low-output voltage high power supply rejection ratio band-gap reference source circuit - Google Patents
Free-operational amplifier low-output voltage high power supply rejection ratio band-gap reference source circuit Download PDFInfo
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- CN104977964A CN104977964A CN201510398494.8A CN201510398494A CN104977964A CN 104977964 A CN104977964 A CN 104977964A CN 201510398494 A CN201510398494 A CN 201510398494A CN 104977964 A CN104977964 A CN 104977964A
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Abstract
The invention provides a free-operational amplifier low-output voltage high power supply rejection ratio band-gap reference source circuit comprising a reference current generation circuit and an output circuit. Three branches of the reference current generation circuit are formed by two PMOS pipes in a serial connection and further a biasing circuit, wherein the biasing circuit is formed by a first biasing PMOS pipe, a second biasing PMOS pipe in a serial connection with the first biasing PMOS pipe and a biasing NMOS pipe; and the two biasing PMOS pipes are in a parallel connection with the PMOS pipe of the reference current generation circuit. The output circuit comprises first resistance, second resistance in a serial connection with the first resistance, a No.0 triode and a first triode in a serial connection with the No.0 triode. With the biasing circuit, drain electrode voltage of the NMOS pipe of the reference current generation circuit can be remained the same instead of changing with power supply voltage, so circuit reference currents are kept; and inhibiting ability of output voltage on power supply changes can be improved.
Description
Technical field
The invention belongs to integrated circuit fields, relate to a kind of low output voltage high PSRR band-gap reference source circuit without amplifier.
Background technology
Along with the develop rapidly of system integration technology, reference voltage source has become on a large scale, indispensable basic circuit module in VLSI (very large scale integrated circuit) and nearly all digital simulator system.Reference voltage source is the important component part of VLSI (very large scale integrated circuit) and electronic system, can be widely used in precision comparator, A/D and D/A converter, random access memories, flash memory and system integrated chip.Band-gap reference is one most popular in all reference voltages, and its Main Function provides stable reference voltage or reference current in integrated circuits, this just require band-gap reference to the change of supply voltage and the change of temperature insensitive.
As shown in Figure 1, for of the prior art without amplifier band-gap reference source circuit.This circuit comprises reference current generating circuit and output circuit.Reference current generating circuit specifically comprises three PMOS MP1, MP2 and MP3, and two NMOS tube MN1 and MN2 and zero resistance R0, for providing reference current to output circuit.MP1, MP2 are connected with the source electrode of MP3, and grid is connected, and the drain electrode of MP1 with MP2 is connected the drain electrode of MN1 and MN2 respectively, and the drain and gate of MN1 connects the grid of MN2 respectively.Output circuit comprises triode Q1 and the first resistance R1 of series connection, and the emitter of Q1 is connected with R1, and the base stage of Q1 is connected with the drain electrode of MP3 respectively with collector, and tie point is as voltage output end.Wherein, the voltage difference between the drain and gate of MP1, MP2 and MP3 be m:m:n, MN1 and MN2 drain and gate between voltage difference be 1:p, wherein, m, n and p are positive integer.
Because this circuit comprises a triode, output voltage VBG has negative temperature coefficient, and namely bandgap voltage reference is to the sensitive of temperature, and the output voltage of this circuit is poor for the rejection ability of power source change.
Summary of the invention
The object of the invention is to propose a kind of low output voltage high PSRR band-gap reference source circuit without amplifier, to solve the thermally sensitive problem of bandgap voltage reference, improve Power Supply Rejection Ratio.
Embodiments provide a kind of low output voltage high PSRR band-gap reference source circuit without amplifier, comprise reference current generating circuit and output circuit, wherein,
Three branches of described reference current generating circuit comprise two PMOS of series connection respectively;
Described circuit also comprises biasing circuit, and described biasing circuit comprises the first bias PMOS pipe of series connection, the second bias PMOS pipe and biased NMOS tube, and two bias PMOS pipes are in parallel with the PMOS in reference current generating circuit; The drain electrode of the second bias PMOS pipe drains with described biased NMOS tube and is connected; The grid of described biased NMOS tube is connected with the drain electrode of the first NMOS tube in reference current generating circuit, and the source electrode of described biased NMOS tube is connected with the source electrode of the second NMOS tube in reference current generating circuit; The drain and gate of described second NMOS tube is connected;
Described output circuit comprises the first resistance of series connection and the second resistance, the 0th triode of series connection and the first triode, described first resistance two ends connect the base stage of the 0th triode and the first triode respectively, described second resistance two ends connect base stage and the emitter of the 0th triode respectively, the base stage of described first triode is connected with collector, the emitter of described first triode is connected with the collector of described 0th triode, and tie point is as voltage output end.
In foregoing circuit, preferably:
First resistance and/or the second resistance, its resistance is adjustable.
The technical scheme of the embodiment of the present invention, improves for low-voltage and low-power dissipation demand to meet chip, requires that higher chip has earth shaking meaning for quiescent dissipation.In this band-gap reference circuit, owing to no longer introducing amplifier, so the problem that offset voltage affects for band gap (bandgap) output voltage also would not be produced.
In order to increase the inhibiting effect of this circuit for supply voltage, add a road biasing circuit, can ensure that the drain electrode end of positive NMOS is consistent, the reference current of circuit will be changed with the change of supply voltage, improve the rejection ability of output voltage for power source change.
In order to reduce the power consumption of this circuit, in biasing circuit, adding divider resistance, for the grid of PMOS each in this circuit provides voltage, other biasing circuit need not be designed for the grid of each PMOS and voltage is provided, thus reducing the power consumption of circuit.
In order to obtain the output of zero temp shift temperature coefficient, the output of zero temp shift temperature coefficient can be obtained by the resistance of resistance in adjustment output circuit.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of existing band-gap reference circuit;
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not entire infrastructure.
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the embodiment of the present invention, this, without the low output voltage high PSRR band-gap reference source circuit of amplifier, comprises reference current generating circuit and output circuit.
Three branches of said reference current generating circuit comprise two PMOS of series connection respectively.
Concrete, reference current generating circuit specifically comprises PMOS MP1, MP2, MP3, MP5, MP6 and MP7, and two NMOS tube MN1 and MN2 and zero resistance R0, for providing reference current to output circuit.MP1, MP2 are connected with the source electrode of MP3, and grid is connected, and drain electrode connects MP5, MP6 and MP7 respectively.MP5, MP6 are connected with the grid of MP7, and drain electrode connects the collector of the drain electrode of MN1, the drain electrode of MN2 and Q1 respectively.The drain and gate of MN2 connects the grid of MN1 respectively, the source electrode contact resistance R0 of MN2.Wherein, voltage difference between the drain and gate of MP1, MP2 and MP3 be m:m:n, MP5, MP6 and MP7 drain and gate between voltage difference be m:m:n, MN1 and MN2 drain and gate between voltage difference be 1:p, wherein, m, n and p are positive integer.
Output circuit comprises the first resistance R1 of series connection and the second resistance R2, the 0th triode Q0 of series connection and the first triode Q1, first resistance R1 two ends connect the base stage of the 0th triode Q0 and the first triode Q1 respectively, second resistance R2 two ends connect base stage and the emitter of the 0th triode Q0 respectively, the base stage of the first triode Q1 is connected with collector, the emitter of the first triode Q1 is connected with the collector of the 0th triode Q0, and tie point is as voltage output end.
First bias PMOS pipe MP0, the second bias PMOS pipe MP4 and biased NMOS tube MN0 of series connection, two bias PMOS pipes are in parallel with the PMOS in reference current generating circuit; Concrete, MP1 is in parallel with first PMOS of output circuit Zhong Ge branch, and namely grid is connected, and source electrode is connected, and drain electrode connects the source electrode of MP4; The grid of MP4 is connected with the grid of second PMOS of output circuit Zhong Ge branch, and the drain electrode of MP4 drains with MN0 and is connected; The grid of MN0 is connected with the drain electrode of the first NMOS tube MN1 in reference current generating circuit, and the source electrode of MN0 is connected with the source electrode of the second NMOS tube MN2 in reference current generating circuit; The drain and gate of MN2 is connected.
In the present embodiment, also comprise further: biasing circuit.
The technical scheme of the embodiment of the present invention is in order to increase the inhibiting effect of this circuit for supply voltage, add the biasing circuit of road MP0, MP4 and MN0 composition, can ensure that the drain electrode of MN1 and the drain electrode of MN2 are consistent, the reference current of circuit will be changed with the change of supply voltage, improve the rejection ability of output voltage for power source change; Three reference current generating circuit branches of this circuit comprise two PMOS of series connection respectively, further increase the rejection ability of output voltage for power source change.
In foregoing circuit, preferably, divider resistance R3 is connected with between the drain electrode of the second bias PMOS pipe MP4 and the drain electrode of biased NMOS tube MN0; In biasing circuit and three reference current generating circuit branches, the grid of first respective PMOS is connected, and is connected to the drain electrode of MP4; In biasing circuit and three reference current generating circuit branches, the grid of second respective PMOS is connected, and is connected to the drain electrode of MN0.
In biasing circuit, add divider resistance R3, for the grid of PMOS each in this circuit provides voltage, other biasing circuit need not be designed for each PMOS grid and voltage is provided, thus reduce the power consumption of circuit.
In foregoing circuit, preferably:
First resistance R1 and/or the second resistance R2, its resistance is adjustable, to solve the thermally sensitive problem of bandgap voltage reference, realizes the output of zero temp shift temperature coefficient.
The technical scheme of the embodiment of the present invention, improves for low-voltage and low-power dissipation demand to meet chip, requires that higher chip has earth shaking meaning for quiescent dissipation.In this band-gap reference circuit, owing to no longer introducing amplifier, so the problem that offset voltage affects for band gap (bandgap) output voltage also would not be produced.In addition, the output of zero temp shift temperature coefficient can be obtained by the value adjusting R1 and/or R2.
The expression formula of the output voltage VBG of foregoing circuit structure is:
VBG＝{Vbe(q0)+{R2*Vt*ln[(1+β)/β]*k}/R1}*(R1/R2)
Wherein, the emitter junction voltage that Vbe (q0) is Q0, Vt=KT/q, q is electron charge (1.6*10E-19 coulomb), and K is Boltzmann constant, and T is temperature, k is the triode quantity of Q1, and β is the component relationship coefficient between NMOS tube MN0, MN1 and MN2.
Can find out according to this expression formula, the temperature coefficient of output voltage VBG can be changed by the ratio adjusting R1 and R2, when suitably adjusting the ratio of R1 and R2, can obtain the output voltage VBG of zero temp shift temperature coefficient.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (2)
1., without a low output voltage high PSRR band-gap reference source circuit for amplifier, comprise reference current generating circuit and output circuit, it is characterized in that:
Three branches of described reference current generating circuit comprise two PMOS of series connection respectively;
Described circuit also comprises biasing circuit, and described biasing circuit comprises the first bias PMOS pipe of series connection, the second bias PMOS pipe and biased NMOS tube, and two bias PMOS pipes are in parallel with the PMOS in reference current generating circuit; The drain electrode of the second bias PMOS pipe drains with described biased NMOS tube and is connected; The grid of described biased NMOS tube is connected with the drain electrode of the first NMOS tube in reference current generating circuit, and the source electrode of described biased NMOS tube is connected with the source electrode of the second NMOS tube in reference current generating circuit; The drain and gate of described second NMOS tube is connected;
Described output circuit comprises the first resistance of series connection and the second resistance, the 0th triode of series connection and the first triode, described first resistance two ends connect the base stage of the 0th triode and the first triode respectively, described second resistance two ends connect base stage and the emitter of the 0th triode respectively, the base stage of described first triode is connected with collector, the emitter of described first triode is connected with the collector of described 0th triode, and tie point is as voltage output end.
2. circuit according to claim 1, is characterized in that:
First resistance and/or the second resistance, its resistance is adjustable.
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| CN201510398494.8A CN104977964A (en) | 2015-07-08 | 2015-07-08 | Free-operational amplifier low-output voltage high power supply rejection ratio band-gap reference source circuit |
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| CN201510398494.8A CN104977964A (en) | 2015-07-08 | 2015-07-08 | Free-operational amplifier low-output voltage high power supply rejection ratio band-gap reference source circuit |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594923A (en) * | 2018-05-30 | 2018-09-28 | 丹阳恒芯电子有限公司 | A kind of small area reference circuit in Internet of Things |
| CN112764450A (en) * | 2021-04-08 | 2021-05-07 | 坤元微电子(南京)有限公司 | Reference voltage source circuit and low dropout regulator |
| CN113721691A (en) * | 2020-05-25 | 2021-11-30 | 株式会社村田制作所 | Bias circuit |
| CN113783534A (en) * | 2021-09-15 | 2021-12-10 | 武汉市聚芯微电子有限责任公司 | Feedback type audio power amplifying circuit, audio amplifying device and electronic device |
| CN115328258A (en) * | 2022-09-22 | 2022-11-11 | 武汉泽声微电子有限公司 | Band gap reference circuit |
| CN115421551A (en) * | 2022-08-30 | 2022-12-02 | 成都微光集电科技有限公司 | Band gap reference circuit and chip |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101598954A (en) * | 2009-05-09 | 2009-12-09 | 南京微盟电子有限公司 | A kind of reference voltage source circuit for enhancement type MOS tube |
| CN202083976U (en) * | 2011-05-05 | 2011-12-21 | 王宇星 | High-precision CMOS (Complementary Metal Oxide Semiconductor) band-gap reference circuit |
| CN102622038A (en) * | 2012-03-29 | 2012-08-01 | 北京经纬恒润科技有限公司 | Band-gap reference voltage source circuit and band-gap reference voltage source |
| CN202486648U (en) * | 2012-03-16 | 2012-10-10 | 北京经纬恒润科技有限公司 | Reference voltage source starting circuit |
| CN202502430U (en) * | 2012-03-29 | 2012-10-24 | 北京经纬恒润科技有限公司 | Bandgap reference voltage source circuit |
| CN103412595A (en) * | 2013-06-20 | 2013-11-27 | 中国矿业大学 | Low-power-source-dependency band-gap reference voltage circuit design based on PTAT current |
| US8866536B1 (en) * | 2013-11-14 | 2014-10-21 | United Microelectronics Corp. | Process monitoring circuit and method |
| CN204808099U (en) * | 2015-07-08 | 2015-11-25 | 北京兆易创新科技股份有限公司 | There is not low output voltage high power supply rejection ratio band gap reference circuit that fortune was put |
-
2015
- 2015-07-08 CN CN201510398494.8A patent/CN104977964A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101598954A (en) * | 2009-05-09 | 2009-12-09 | 南京微盟电子有限公司 | A kind of reference voltage source circuit for enhancement type MOS tube |
| CN202083976U (en) * | 2011-05-05 | 2011-12-21 | 王宇星 | High-precision CMOS (Complementary Metal Oxide Semiconductor) band-gap reference circuit |
| CN202486648U (en) * | 2012-03-16 | 2012-10-10 | 北京经纬恒润科技有限公司 | Reference voltage source starting circuit |
| CN102622038A (en) * | 2012-03-29 | 2012-08-01 | 北京经纬恒润科技有限公司 | Band-gap reference voltage source circuit and band-gap reference voltage source |
| CN202502430U (en) * | 2012-03-29 | 2012-10-24 | 北京经纬恒润科技有限公司 | Bandgap reference voltage source circuit |
| CN103412595A (en) * | 2013-06-20 | 2013-11-27 | 中国矿业大学 | Low-power-source-dependency band-gap reference voltage circuit design based on PTAT current |
| US8866536B1 (en) * | 2013-11-14 | 2014-10-21 | United Microelectronics Corp. | Process monitoring circuit and method |
| CN204808099U (en) * | 2015-07-08 | 2015-11-25 | 北京兆易创新科技股份有限公司 | There is not low output voltage high power supply rejection ratio band gap reference circuit that fortune was put |
Non-Patent Citations (1)
| Title |
|---|
| 毕查德·拉扎维: "《模拟CMOS集成电路设计》", 31 January 2015 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594923A (en) * | 2018-05-30 | 2018-09-28 | 丹阳恒芯电子有限公司 | A kind of small area reference circuit in Internet of Things |
| CN113721691A (en) * | 2020-05-25 | 2021-11-30 | 株式会社村田制作所 | Bias circuit |
| CN113721691B (en) * | 2020-05-25 | 2022-09-09 | 株式会社村田制作所 | Bias circuit |
| CN112764450A (en) * | 2021-04-08 | 2021-05-07 | 坤元微电子(南京)有限公司 | Reference voltage source circuit and low dropout regulator |
| CN113783534A (en) * | 2021-09-15 | 2021-12-10 | 武汉市聚芯微电子有限责任公司 | Feedback type audio power amplifying circuit, audio amplifying device and electronic device |
| CN113783534B (en) * | 2021-09-15 | 2022-05-17 | 武汉市聚芯微电子有限责任公司 | Feedback type audio power amplifying circuit, audio amplifying device and electronic device |
| CN115421551A (en) * | 2022-08-30 | 2022-12-02 | 成都微光集电科技有限公司 | Band gap reference circuit and chip |
| CN115328258A (en) * | 2022-09-22 | 2022-11-11 | 武汉泽声微电子有限公司 | Band gap reference circuit |
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