CN104966984A - Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser - Google Patents
Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser Download PDFInfo
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- CN104966984A CN104966984A CN201510367675.4A CN201510367675A CN104966984A CN 104966984 A CN104966984 A CN 104966984A CN 201510367675 A CN201510367675 A CN 201510367675A CN 104966984 A CN104966984 A CN 104966984A
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Abstract
The invention discloses a device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser, comprising a mold photonic crystal semiconductor laser and a frequency-doubling crystal connected to the mold photonic crystal semiconductor laser, wherein the locking mold photonic semiconductor laser is of an laminating structure and comprises an N-type substrate, a lower electrode, an N-type limitation layer, an photonic crystal, an active layer, a P -type limitation layer, a P-type covering layer, an electric insulation layer, and an upper electrode. The lower electrode is made on the lower surface on the N-type substrate; the N-type limitation layer is made on the upper surface of the N-type substrate; the phonic crystal is made on the N-type limitation layer; the active layer is made on the phonic crystal; the P-type limitation layer is made on the active layer, and the P type limitation layer has a projected ridge structure in the middle; the P-type covering layer is made on the ridge structure of the P type limitation layer; an insulation groove is formed in the middle of the P type cover layer on the ridge structure; the electric insulation layer is formed on the P-type limitation layer on the two sides of the ridge structure and on the P-type limitation layer inside the insulation groove; and the upper electrode is formed on the P-type cover layer.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical field, particularly relate to a kind of locked mode photonic crystal semiconductor laser direct frequency doubling laser aid realizing short wavelength laser.
Background technology
Short wavelength laser should have widely owing to having the features such as high photon energy, low diffraction limit, naked eyes are distinguishable and having in fields such as laser display, optical information storage, laser printing.Early stage short wavelength laser is all produced by gas laser, but gas laser faces that volume is large, efficiency is low and the shortcoming such as poor reliability.Utilize the mode of all solid state laser frequency multiplication can improve power and the stability of short wavelength laser, but be faced with the problems such as efficiency is too low equally.And laser display application requires that the short wavelength laser produced has relatively poor coherence, and the mode of all-solid state laser frequency multiplication is applied and often caused the problems such as speckle with laser display.
Semiconductor laser is the light source that electro-optical efficiency is the highest, have cover wavelength band wide, life-span long, can little, the low cost and other advantages of directly modulation, volume.Wherein, edge-emission semiconductor laser array has great advantage at high efficiency, high power laser output facet.Utilize different semiconductor epitaxial material systems can realize short wavelength's (as red, green, blue etc.) at present directly to produce, power output and efficiency have also been obtained larger lifting in recent years, but be still faced with the relative shortcoming such as not high of extension difficulty, efficiency and reliability, technology also mainly rests in several companies hand.Near infrared band edge-emission semiconductor laser experienced by the development of many decades, and most high-tech is very ripe, has the highest conversion efficiency (commercial product electro-optical efficiency > 70%) simultaneously.Edge-emission semiconductor laser direct frequency doubling is utilized to produce short wavelength laser, for all-solid state laser frequency multiplication, decrease the demand of laser crystal, reduce pumped crystal and the energy loss that produces and device cost, the speckle issue in laser display application can also be improved.Meanwhile, process stabilizing, technology maturation.
Utilize direct frequency multiplication for semiconductor laser, after frequency-doubling crystal is selected, the fundamental frequency semiconductor laser of high power density, small divergence angle can improve shg efficiency.Utilize mode-locking technique can improve the time energy density of output laser pulse, and photon crystal structure can regulate and control the mode profile in chamber, reduce the angle of divergence of laser.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of locked mode photonic crystal semiconductor laser direct frequency doubling to produce short wavelength laser device, ultrashort Laser Diode Pulse is produced by passive self-locking mould, photonic crystal is utilized to reduce the angle of divergence of semiconductor laser, utilize frequency-doubling crystal to realize fundamental frequency light frequency multiplication, reach the efficient object exporting short wavelength laser.
For achieving the above object, the invention provides a kind of locked mode photonic crystal semiconductor laser direct frequency doubling and produce short wavelength laser device, comprising:
One locked mode photonic crystal semiconductor laser and the frequency-doubling crystal be attached thereto;
Wherein, locked mode photonic crystal semiconductor laser is laminated construction, comprising:
One N-type substrate;
One bottom electrode, it is produced on the lower surface of N-type substrate;
One N-type limiting layer, it is produced on the upper surface of N-type substrate;
One photonic crystal, it is produced on N-type limiting layer;
One active layer, it makes on photonic;
One P type limiting layer, it is produced on active layer, and the centre of this P type limiting layer has a strip projected parts to be ridge structure; And
One P type cap rock, it is produced in the ridge structure of P type limiting layer, in the middle of this ridge structural P type cap rock, have an insulation tank;
One electric insulation layer, on the P type limiting layer on its this P type limiting layer being produced on ridge structure both sides and in insulation tank;
One top electrode, it is produced on P type cap rock.
As can be seen from technique scheme, the present invention has following beneficial effect:
1, this kind of locked mode photonic crystal semiconductor laser direct frequency doubling provided by the invention produces short wavelength laser device, utilizes passive self-locking mould technology to produce ultrashort fundamental frequency light pulse, utilizes photonic crystal to reduce the fundamental frequency light angle of divergence, improves the efficiency of frequency multiplication.
2, this kind of locked mode photonic crystal semiconductor laser direct frequency doubling provided by the invention produces short wavelength laser device, decreases the demand to laser crystal.Meanwhile, because fundamental frequency light itself has the ultralow angle of divergence, the demand of collimation lens is decreased.Preparation technology is simple, and compact conformation, is easy to integrated.
In a word, this a kind of locked mode photonic crystal semiconductor laser direct frequency doubling provided by the invention produces short wavelength laser device, there is the efficient advantage producing short wavelength laser, and structure is simple, stability is high, cost is low, has broad application prospects in the fields such as laser display, optical information storage, laser printing.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention definitely, below with reference to accompanying drawings and in conjunction with embodiment, the present invention is further detailed explanation, wherein:
Fig. 1 is the top view that locked mode photonic crystal semiconductor laser direct frequency doubling provided by the invention produces short wavelength laser device.
Fig. 2 is the three-dimensional structure schematic diagram of locked mode photonic crystal semiconductor laser provided by the invention.
Fig. 3 is the quick shaft direction far-field distribution figure of the locked mode photonic crystal semiconductor laser output fundamental frequency light of embodiment 1.
Fig. 4 is the slow-axis direction far-field distribution figure of the locked mode photonic crystal semiconductor laser output fundamental frequency light of embodiment 1.
Embodiment
Refer to shown in Fig. 1 and Fig. 2, the invention provides a kind of locked mode photonic crystal semiconductor laser direct frequency doubling and produce short wavelength laser device, comprising:
One locked mode photonic crystal semiconductor laser 1 and the frequency-doubling crystal 2 be attached thereto, the material that this frequency-doubling crystal 2 adopts is lithium niobate, barium sodium niobate, potassium niobate or lithium iodate, the end face of described frequency-doubling crystal 2 near locked mode photonic crystal semiconductor laser 1 side is coated with anti-film 201, this penetrating reflecting film 201 pairs of fundamental frequency light total transmissivities, to frequency doubled light total reflection; Opposite side end face is coated with anti-transmission film 202, this anti-transmission film 202 pairs of fundamental frequency light total reflections, to frequency doubled light total transmissivity;
Wherein, locked mode photonic crystal semiconductor laser 1 is laminated construction, comprising:
One N-type substrate 102;
One bottom electrode 101, it is produced on the lower surface of N-type substrate 102;
One N-type limiting layer 103, it is produced on the upper surface of N-type substrate 102;
One photon crystal 1 04, it is produced on N-type limiting layer 103, described photon crystal 1 04 replaces stacked forming by least two pairs of low-index materials 112 and high-index material 113, and wherein the refractive index of low-index material 112 is less than the refractive index of high-index material 113.The gross thickness of photon crystal 1 04 is thicker, and the quick shaft direction angle of divergence of locked mode photonic crystal semiconductor laser 1 is less, is more conducive to the laser coupled of outgoing in locked mode photonic crystal semiconductor laser 1 in frequency-doubling crystal 2;
One active layer 105, it is produced on photon crystal 1 04, the structure that described active layer 105 adopts is quantum well, quantum wire or quantum dot, the material adopted is III-V group semi-conductor material or II-VI group semi-conducting material, comprise GaN/AlGaN, GaAs/AlGaAs, InP/InGaAsP or ZnO material system, gain spectral peak wavelength scope covers near ultraviolet to infrared band;
One P type limiting layer 106, it is produced on active layer 105, and the centre of this P type limiting layer 106 has a strip projected parts to be ridge structure 108; And
One P type cap rock 107, it is produced in the ridge structure 108 of P type limiting layer 106, an insulation tank 109 is had in the middle of P type cap rock 107 in this ridge structure 108, ridge structure 108 is divided into saturation region 114 and gain region 115 by described insulation tank 109, described saturation region 114 loads reverse voltage, and described gain region 115 loads forward current;
One electric insulation layer 110, on the P type limiting layer 106 on its this P type limiting layer 106 being produced on ridge structure 108 both sides and in insulation tank 109, the material of described electric insulation layer 110 is SiO
2, SiN
4or Al
2o
3, its thickness is between 100nm to 1um;
One top electrode 111, it is produced on P type cap rock 107.
Produce short wavelength laser device below in conjunction with specific embodiment to a kind of locked mode photonic crystal semiconductor laser direct frequency doubling provided by the invention to be described in further detail.
Embodiment one
Fig. 1 is the geometry schematic diagram that locked mode photonic crystal semiconductor laser direct frequency doubling produces short wavelength laser device.Device comprises a locked mode photonic crystal semiconductor laser and a frequency-doubling crystal.Wherein the structure of locked mode photonic crystal semiconductor laser as shown in Figure 2, and its excitation wavelength is 1.06 μm, and ridge structure width is 20 μm.Photonic crystal comprises the Al of 16 pairs of alternating growths
xga
1-xas/Al
yga
1-yas layer, gross thickness is close to 25 μm.The quick shaft direction far-field distribution of Fig. 3 display translation fundamental frequency light is Gaussian Profile, and its full width at half maximum value is 3 degree.Fig. 4 display translation fundamental frequency light slow-axis direction far-field distribution is similarly Gaussian Profile, and its full width at half maximum value is 3.2 degree.Such low divergence circle spot far-field distribution is conducive to fundamental frequency light and is directly coupled in frequency-doubling crystal, reduces energy loss, improves shg efficiency, also reduce the complexity of system simultaneously.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. locked mode photonic crystal semiconductor laser direct frequency doubling produces a short wavelength laser device, comprising:
One locked mode photonic crystal semiconductor laser and the frequency-doubling crystal be attached thereto;
Wherein, locked mode photonic crystal semiconductor laser is laminated construction, comprising:
One N-type substrate;
One bottom electrode, it is produced on the lower surface of N-type substrate;
One N-type limiting layer, it is produced on the upper surface of N-type substrate;
One photonic crystal, it is produced on N-type limiting layer;
One active layer, it makes on photonic;
One P type limiting layer, it is produced on active layer, and the centre of this P type limiting layer has a strip projected parts to be ridge structure;
One P type cap rock, it is produced in the ridge structure of P type limiting layer, in the middle of this ridge structural P type cap rock, have an insulation tank;
One electric insulation layer, on the P type limiting layer on its this P type limiting layer being produced on ridge structure both sides and in insulation tank; And
One top electrode, it is produced on P type cap rock.
2. locked mode photonic crystal semiconductor laser direct frequency doubling according to claim 1 produces short wavelength laser device, and the material that wherein said frequency-doubling crystal adopts is lithium niobate, barium sodium niobate, potassium niobate or lithium iodate.
3. locked mode photonic crystal semiconductor laser direct frequency doubling according to claim 2 produces short wavelength laser device, the end face of wherein said frequency-doubling crystal near locked mode photonic crystal semiconductor laser side is coated with anti-film, and this penetrating reflecting film is to fundamental frequency light total transmissivity, to frequency doubled light total reflection; Opposite side end face is coated with anti-transmission film, and this anti-transmission film is to fundamental frequency light total reflection, to frequency doubled light total transmissivity.
4. locked mode photonic crystal semiconductor laser direct frequency doubling according to claim 1 produces short wavelength laser device, wherein said photonic crystal replaces stacked forming by least two pairs of low-index materials and high-index material, and wherein the refractive index of low-index material is less than the refractive index of high-index material.
5. locked mode photonic crystal semiconductor laser direct frequency doubling according to claim 1 produces short wavelength laser device, the structure that wherein said active layer adopts is quantum well, quantum wire or quantum dot, the material adopted is III-V group semi-conductor material or II-VI group semi-conducting material, and gain spectral peak wavelength scope covers near ultraviolet to infrared band.
6. locked mode photonic crystal semiconductor laser direct frequency doubling according to claim 1 produces short wavelength laser device, and the material of wherein said electric insulation layer is SiO
2, SiN
4or Al
2o
3.
7. locked mode photonic crystal semiconductor laser direct frequency doubling according to claim 1 produces short wavelength laser device, and ridge structure is divided into saturation region and gain region by wherein said insulation tank.
8. locked mode photonic crystal semiconductor laser direct frequency doubling according to claim 7 produces short wavelength laser device, and wherein said saturation region loads reverse voltage, and described gain region loads forward current.
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| CN107785776A (en) * | 2017-10-17 | 2018-03-09 | 中国科学院半导体研究所 | Curved tapers photon crystal laser and array, array light source group |
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Application publication date: 20151007 |